Platinum film deposition method for high aspect ratio structure and platinum film

Abstract

The invention discloses a platinum thin film deposition method for a high aspect ratio structure and a platinum thin film, relates to the technical field of semiconductor thin film deposition, and aims to solve the problem of uniform deposition of the platinum thin film in the high aspect ratio structure in the prior art. Comprising the following steps: placing a pretreated substrate in a reaction vacuum chamber, vacuumizing the reaction vacuum chamber, and adjusting the temperature of the reaction vacuum chamber to a specific temperature; after the environment of the reaction vacuum chamber is stable, a modified platinum precursor and oxidizing gas are sequentially introduced, and periodic enhanced purging is carried out; and the platinum film with the target thickness is obtained after multiple deposition cycles are repeated. Through the novel precursor combination of the modified platinum precursor and the oxidizing gas and a temperature gradient control strategy, the problem of uniform deposition of the platinum film in a high aspect ratio structure is successfully solved, and atomic-scale precise deposition of the platinum film in a deep microstructure is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor thin film deposition, and in particular to a platinum thin film deposition method for high aspect ratio structures and a platinum thin film. BACKGROUND

[0002] In the field of modern micro-nano processing technology, the preparation of high aspect ratio structures has become a key link for the manufacture of many high-end devices. From advanced semiconductor chips to high-performance micro-electro-mechanical systems (MEMS), and complex nanosensors, these devices often rely on materials with fine high aspect ratio structures, and platinum thin films, as an important functional material, have great potential for application in such structures.

[0003] Traditional platinum thin film deposition techniques have many limitations when faced with high aspect ratio structures. For example, physical vapor deposition (PVD) methods, such as magnetron sputtering, while having a relatively high deposition rate, due to their line-of-sight (straight deposition) characteristics, often struggle to achieve uniform thin film coverage in the deep trenches or high sidewall parts of the structure when depositing high aspect ratio structures. This can result in discontinuous and uneven thickness of the thin film at the bottom and sidewall, which in turn affects the electrical, optical, and other performance of the device and the stability of the structure.

[0004] With the development of three-dimensional semiconductor devices, the step coverage requirement for metal thin films is becoming higher and higher. Traditional physical vapor deposition (PVD) is prone to problems such as excessive thickness at the top and insufficient coverage at the bottom in deep trench structures. Atomic layer deposition (ALD) has good conformality, but there are problems such as insufficient precursor adsorption energy and poor thermal stability for the deposition of noble metals such as platinum. In particular, for structures with a line width less than 10 μm and an aspect ratio exceeding 20:1, existing processes are difficult to achieve high step coverage.

[0005] Therefore, there is an urgent need to provide a more reliable platinum thin film deposition method for high aspect ratio structures and a platinum thin film. SUMMARY

[0006] The purpose of the present application is to provide a platinum thin film deposition method for high aspect ratio structures and a platinum thin film, to solve the problem of uniform deposition of platinum thin films in high aspect ratio structures in the prior art.

[0007] To achieve the above-mentioned purpose, the present application provides the following technical solutions:

[0008] In a first aspect, the present application provides a platinum thin film deposition method for high aspect ratio structures, the method comprising:

[0009] placing the pretreated substrate in a reaction vacuum chamber, performing a vacuum operation on the reaction vacuum chamber, and adjusting the temperature of the reaction vacuum chamber to a specific temperature;

[0010] After the reaction vacuum chamber environment is stable, a modified platinum precursor and an oxidizing gas are sequentially introduced, and periodic intensive purging is performed;

[0011] After repeating the deposition cycle multiple times, a platinum thin film of a target thickness is obtained.

[0012] Compared with the prior art, the platinum thin film deposition method for high aspect ratio structures provided by the application successfully solves the problem of uniform deposition of platinum thin films in high aspect ratio structures by using a new precursor combination of a modified platinum precursor and an oxidizing gas and a temperature gradient control strategy, and realizes atomic-level precise deposition of platinum thin films in deep microstructures.

[0013] Optionally, after the reaction vacuum chamber environment is stable, a modified platinum precursor and an oxidizing gas are sequentially introduced, and periodic intensive purging is performed, including:

[0014] After the reaction vacuum chamber environment is stable, the modified platinum precursor is introduced, and the reaction is performed for a preset time and repeated a preset number of times to perform first purging;

[0015] The oxidizing gas is introduced, and second purging is performed;

[0016] The modified platinum precursor and the oxidizing gas are sequentially introduced to perform periodic intensive purging until a preset condition is met.

[0017] Optionally, the modified platinum precursor is trimethylmethylcyclopentadienyl platinum, and the oxidizing gas is oxygen.

[0018] Optionally, when purging is performed, purging is performed in different intervals, and each cycle includes a reaction stage and a purging stage.

[0019] The purging process adopts a double-temperature-zone design; the first purging temperature corresponding to the introduction of the modified platinum precursor for first purging is 75-85 DEG C; and the second purging temperature corresponding to the introduction of the oxidizing gas for second purging is 95-105 DEG C.

[0020] Optionally, the temperature of the sample stage in the reaction vacuum chamber is heated to 290-310 DEG C.

[0021] Optionally, the pressure range of the reaction gas is set to 0.05 Torr to 0.15 Torr, and the reaction time is controlled between 2 and 15 seconds; the purging gas is nitrogen, the flow rate is adjusted to the range of 5 sccm to 10 sccm, and the purging time is 5 to 15 seconds.

[0022] Optionally, the pretreated substrate placed in the reaction vacuum chamber is a substrate with an etched pattern.

[0023] Optionally, the platinum thin film deposition method is based on the three-dimensional structure of the platinum thin film obtained by the T-ALD process. Through precursor transport kinetic optimization and gradient thermal field synergistic control, atomic-level deposition of platinum thin films within deep microstructures is achieved.

[0024] In a second aspect, the present invention provides a platinum thin film with a high aspect ratio structure, which is deposited using the platinum thin film deposition method for high aspect ratio structures provided in the first aspect above. Attached Figure Description

[0025] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0026] Figure 1 This is a schematic diagram of a platinum thin film deposition method for high aspect ratio structures provided by the present invention;

[0027] Figure 2 A complete flowchart of a platinum thin film deposition method for high aspect ratio structures is provided in an embodiment of the present invention;

[0028] Figure 3 This is a schematic diagram of the deposition of a 5μm linewidth platinum thin film in Embodiment 1;

[0029] Figure 4 This is a schematic diagram of the deposition on the upper surface of a 5μm linewidth platinum thin film in Embodiment 1;

[0030] Figure 5 This is a schematic diagram of the side deposition of a 5μm linewidth platinum thin film in Embodiment 1;

[0031] Figure 6 This is a schematic diagram of the deposition of a 5μm linewidth platinum thin film on the bottom surface in Embodiment 1;

[0032] Figure 7 This is a schematic diagram of the deposition of a 25μm linewidth platinum thin film in Embodiment 2;

[0033] Figure 8 This is a schematic diagram of the deposition on the upper surface of a 25μm linewidth platinum thin film in Embodiment 2;

[0034] Figure 9 Figure 2 is a schematic diagram of side deposition of a 25 μm line width structure platinum thin film according to embodiment two;

[0035] Figure 10 Figure 3 is a schematic diagram of bottom deposition of a 25 μm line width structure platinum thin film according to embodiment two. DETAILED DESCRIPTION

[0036] In order to clearly describe the technical solutions of the embodiments of the present application, in the embodiments of the present application, the terms "first", "second", etc. are used to distinguish the same or similar items with basically the same function and role. For example, the first threshold and the second threshold are merely used to distinguish different thresholds, and do not limit the order. Those skilled in the art can understand that the terms "first", "second", etc. do not limit the number and execution order, and the terms "first", "second", etc. also do not necessarily mean different.

[0037] It should be noted that in the present application, the words "exemplary" or "for example" are used to represent an example, illustration, or description. Any embodiment or design scheme described as "exemplary" or "for example" in the present application should not be interpreted as more preferred or more advantageous than other embodiments or design schemes. Rather, the words "exemplary" or "for example" are intended to present the relevant concept in a specific manner.

[0038] In the present application, "at least one" means one or more, and "multiple" means two or more. The "and / or" describes the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the following three cases: A exists alone, A and B exist together, and B exists alone, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after it. "At least one of the following" or similar expressions means any combination of these items, including any combination of single or multiple items. For example, at least one of a, b or c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b and c can be single or multiple.

[0039] Currently, atomic layer deposition (ALD) technology has been widely applied in various thin film deposition scenarios due to its excellent film thickness control precision and good conformal performance. However, when it comes to the deposition of noble metals such as platinum, ALD technology faces significant technical bottlenecks. On the one hand, the limitation of adsorption kinetics has become a key factor hindering the high-quality deposition of platinum films. The adsorption process of the precursor inside a high aspect ratio structure is extremely complex, and is affected by a combination of factors such as surface energy, chemical activity, and adsorption site distribution. Due to the interaction characteristics between the platinum precursor and the substrate surface, its adsorption rate and adsorption amount are difficult to reach an ideal state, thus limiting the film growth rate and easily causing uneven adsorption at the microscopic level, which in turn affects the film quality.

[0040] Furthermore, insufficient coverage in high aspect ratio structures also severely impacts platinum film deposition. Within micro / nano structures with extremely high aspect ratios, such as deep holes, deep trenches, or high aspect ratio nanowire arrays, traditional ALD processes struggle to ensure sufficient and uniform penetration of the precursor gas into the bottom and sidewalls of the deep microstructure. This results in uneven platinum film thickness in these areas, and even instances where some areas fail to deposit effectively, ultimately leading to a significant reduction in the overall structure's performance and making it unsuitable for the stringent requirements of high-precision, high-performance device applications.

[0041] Therefore, this invention successfully solved the problem of uniform platinum film deposition in high aspect ratio structures by developing novel precursor combinations and temperature gradient control strategies. The solutions provided in the embodiments of this specification will now be described in conjunction with the accompanying drawings:

[0042] like Figure 1 As shown, the process may include the following steps:

[0043] Step 110: Place the pretreated substrate in the reaction vacuum chamber, perform a vacuuming operation on the reaction vacuum chamber, and adjust the temperature of the reaction vacuum chamber to a specific temperature.

[0044] Pretreatment may include cleaning the substrate surface, removing dust, oil and other impurities, and etching patterns, etc., to ensure that the platinum film can be uniformly attached to the substrate, improve the quality and performance of the film, or ensure that a substrate that meets the requirements is obtained.

[0045] The pre-processed substrate is placed in the reaction vacuum chamber, which is the site where the deposition process takes place, and a controllable environment is provided. The reaction vacuum chamber is evacuated to remove impurity gases such as air and moisture in the reaction vacuum chamber, so as to avoid the reaction of these impurities with the platinum precursor or the reaction gas, affecting the purity and quality of the film. The temperature of the reaction vacuum chamber is adjusted to a specific temperature, and different temperatures will affect the adsorption, dissociation and reaction of the platinum precursor, and specific temperature conditions will help achieve the desired film deposition effect.

[0046] Step 120: After the reaction vacuum chamber environment is stable, the modified platinum precursor and the oxidizing gas are sequentially introduced, and periodic intensive purging is performed.

[0047] The modified platinum precursor is a compound containing platinum elements, which plays a role in providing platinum atoms during the deposition process. After being introduced into the reaction vacuum chamber, the precursor will undergo adsorption and other processes on the substrate surface, preparing for subsequent chemical reactions.

[0048] The oxidizing gas is introduced: The oxidizing gas usually acts as an oxidizing agent and undergoes a redox reaction with the platinum precursor, promoting the release of platinum elements from the precursor and depositing on the substrate surface to form a platinum film. Common oxidizing gases include oxygen (O2), ozone (O3), etc.

[0049] After the introduction of the precursor and the oxidizing gas, periodic intensive purging is performed. This can be done to remove unreacted precursors, reaction byproducts, and possible impurity gases in the reaction vacuum chamber, preventing their accumulation in the reaction vacuum chamber and affecting the quality and uniformity of subsequent deposition cycles. By regularly purging, the purity of the reaction gas and the stability of the reaction conditions in the reaction vacuum chamber can be maintained, ensuring that each deposition cycle can be carried out in a clean environment, thereby improving the thickness uniformity and performance consistency of the platinum film.

[0050] Step 130: After repeating the deposition cycle multiple times, a platinum film of target thickness is obtained.

[0051] The process of introducing the precursor, introducing the oxidizing gas, and purging is repeated multiple times, i.e. a deposition cycle is completed. Each cycle will deposit a thin layer of platinum on the substrate surface, and by controlling the number of cycles, the thickness of the platinum film can be accurately adjusted. When the target thickness is reached, the deposition process is stopped, and a platinum film with the desired performance is obtained

[0052] Figure 1The method in the application comprises the following steps: placing a pretreated substrate into a reaction vacuum chamber, vacuumizing the reaction vacuum chamber, adjusting the temperature of the reaction vacuum chamber to a specific temperature, introducing a modified platinum precursor and an oxidizing gas into the reaction vacuum chamber in sequence after the environment of the reaction vacuum chamber is stable, and performing periodic and intensive purging. The platinum thin film with a target thickness is obtained after repeating the deposition cycle for multiple times. The uniform deposition of the platinum thin film in a high aspect ratio structure is successfully solved by using the new precursor combination of the modified platinum precursor and the oxidizing gas and the temperature gradient control strategy, and the atomic-level precise deposition of the platinum thin film in a deep microstructure is realized.

[0053] Based on the method, Figure 1 The method, some specific embodiments of the method are also provided in the application, which are described below.

[0054] The step 120 can specifically comprise:

[0055] After the environment of the reaction vacuum chamber is stable, the modified platinum precursor is introduced, and the first purging is performed after the reaction for a preset time and for a preset number of times.

[0056] The oxidizing gas is introduced, and the second purging is performed.

[0057] The modified platinum precursor and the oxidizing gas are introduced in sequence to perform the periodic and intensive purging until a preset condition is met.

[0058] After the environment of the reaction vacuum chamber is stable, the modified platinum precursor is introduced. The modified platinum precursor is allowed to react in the reaction vacuum chamber for a preset time and for a preset number of times, and then the first purging is performed. This process is mainly to allow the modified platinum precursor to fully contact and react in the reaction vacuum chamber, and the repeated operation is used to ensure the sufficiency of the reaction. After that, the unreacted or excess modified platinum precursor and part of the intermediate products generated by the reaction are removed from the reaction vacuum chamber by purging, so as to create a relatively clean environment for the subsequent steps.

[0059] Then, the oxidizing gas is introduced to perform the second purging. The introduction of the oxidizing gas can cause an oxidation reaction with the substances in the reaction vacuum chamber, further change the chemical environment in the reaction vacuum chamber, and the purging operation can remove some unnecessary substances, such as part of the oxidized impurities, substances that do not completely participate in the target reaction, etc., so that the composition of the substances in the reaction vacuum chamber and the reaction conditions are adjusted towards a direction more conducive to the final target.

[0060] The modified platinum precursor and the oxidizing gas are periodically and intensively purged until the preset condition is met. This stage is an intensive treatment by alternately introducing the two gases and purging. Each cycle can continuously update the composition inside the reaction vacuum chamber and continuously deepen the reaction, continuously remove the substances that do not meet the requirements, and gradually approach the final desired state of the reaction vacuum chamber. When the preset condition is met, it indicates that the composition of the substances in the reaction vacuum chamber and the reaction condition meet the required standards of the entire process flow, and the series of operations can be ended.

[0061] In a specific implementation, the complete implementation process is as shown in Figure 2 First, the pretreated substrate (i.e., the substrate after etching) is placed in the ALD reaction vacuum chamber, vacuum is drawn, and the temperature is controlled to a specified temperature to maintain the reaction temperature. The modified platinum precursor is introduced into the reaction vacuum chamber, and then the inert gas is purged. The oxidizing gas is continuously introduced into the reaction vacuum chamber, and the inert gas is purged. Multiple cycles are performed to achieve periodic and intensive purging until the required deposition requirements are met, and the target thickness of the platinum thin film is obtained.

[0062] The method places the pretreated substrate in the ALD reaction vacuum chamber, draws vacuum to a set vacuum range, and maintains the reaction temperature. The modified platinum precursor and the oxidizing gas are sequentially introduced, and the dosage is controlled for a set time range. Different intervals are used for purging. Each cycle includes a reaction and purging stage. After multiple deposition cycles, the target thickness of the platinum thin film is obtained. Through precursor transport dynamics optimization and gradient thermal field collaborative control, atomic-level precise deposition of platinum thin film in deep microstructures is achieved.

[0063] Taking the modified platinum precursor as trimethylmethylcyclopentadienyl platinum and the oxidizing gas as oxygen as an example, the platinum thin film deposition method for high aspect ratio structures can include the following steps:

[0064] Place the etched substrate in the reaction vacuum chamber, perform vacuum operation on the reaction vacuum chamber, and adjust the reaction vacuum chamber temperature to a specific temperature.

[0065] After the reaction vacuum chamber environment is stable, introduce the precursor A (trimethylmethylcyclopentadienyl platinum) and react for a period of time.

[0066] Repeat step two twice, and then perform purging.

[0067] Introduce the precursor B (oxygen) and perform purging.

[0068] Repeat the above steps until the predetermined process standard is completed.

[0069] As an optional implementation, the purging process adopts a two-temperature-zone design, the temperature of the precursor A purging stage is controlled at 75-85°C, and the temperature of the precursor B purging stage is raised to 95-105°C.

[0070] As an optional implementation, the sample stage in the reaction vacuum chamber of the etching method needs to be heated to 290-310°C.

[0071] As an optional implementation, the reaction gas used includes oxygen (O2) and trimethylmethylcyclopentadienyl platinum.

[0072] As an optional implementation, the purging process needs to preheat the precursor A to 70-90°C.

[0073] As an optional implementation, the pressure range of the reaction gas is set to 0.05 Torr to 0.15 Torr, the reaction time is controlled between 2 seconds to 15 seconds; the purging gas uses nitrogen, the flow rate is adjusted within the range of 5sccm to 10sccm, and the purging time is 5 seconds to 15 seconds.

[0074] As an optional implementation, the technical solution provided by the present application is applicable to the deposition of a three-dimensional structure with a width of 4-30μm and a depth of 80-250μm. Further, it is applicable to the deposition of a three-dimensional structure with a width of 5-25μm and a depth of 100-200μm.

[0075] Next, in order to further illustrate the technical solution of the present application, taking a 5μm line width structure and a 25μm line width structure as examples, the technical solution of the present application is described in combination with Figures 3-10 The implementation steps are described as follows:

[0076] Implementation manner one (taking a 5μm line width structure as an example, and the depth is 100μm), as shown in Figures 3-6 The 5μm line width structure platinum thin film deposition step includes:

[0077] Step one: make a 5μm line width bottom;

[0078] Step two: place the substrate in the ALD reaction chamber, and vacuumize to 0.090 Torr;

[0079] Step three: heat the sample stage to 300°C, and maintain the precursor A source at 75°C;

[0080] Step four: perform 500 deposition cycles (each cycle includes: A source for 1.5s→ reaction for 3s→ A source for 1.5s→ reaction for 3s→ A source for 1.5s→ reaction for 3s→ 80°C purging for 10s→ B source for 10s→ 100°C purging for 10s);

[0081] Step five: as shown in Figures 3-6As shown, the test shows that the upper surface is 29.77 nm, the side surface is 26.51 nm, the bottom surface is 26.98 nm, and the step coverage is (Ts / Tn)*100%, i.e., (26.51 / 29.77)*100%=89.05%. Wherein, Figure 3 In the figure, 89.99 μm is the channel depth, 6.476 μm and 6.252 μm are the channel width, 20 μm below is the scale, EHT=2 kV is the electron beam voltage, WD=5.6 mm is the working distance, Signal A is the setting option of the instrument probe, and Mag=500X is the magnification. Figure 7 In the figure, 14.51 μm is the thickness of the abnormal deposition area. The rest Figures 4-10 In the figure, the parameter meanings are referred to Figure 1 The explanation is not repeated here.

[0082] Implementation mode two (taking a 25 μm line width structure as an example, and the depth is 200 μm), as shown in Figures 7-10 As shown, the platinum thin film deposition step of the 25 μm line width structure includes:

[0083] Step one: making a 25 μm line width substrate;

[0084] Step two: placing the substrate in an ALD reaction cavity, and vacuumizing to 0.090 Torr;

[0085] Step three: heating the sample table to 300℃, and maintaining the precursor A source at 75℃;

[0086] Step four: performing 500 deposition cycles (each cycle includes: A source for 1.5 s→reaction for 3 s→A source for 1.5 s→reaction for 3 s→A source for 1.5 s→reaction for 3 s→80℃ purging for 10 s→B source for 10 s→100℃ purging for 10 s);

[0087] Step five: measuring that the upper surface is 28.38 nm, the side surface is 26.52 nm, and the bottom surface does not detect obvious deposition.

[0088] The embodiment of the present application also provides a platinum thin film of a high aspect ratio structure, which is deposited by using the platinum thin film deposition method for a high aspect ratio structure in the foregoing embodiment.

[0089] Through the foregoing embodiment description, the technical scheme provided by the present application has at least the following technical effects:

[0090] 1) In view of the technical bottleneck of adsorption kinetics limitation and insufficient coverage of high aspect ratio structure in the field of noble metal deposition by existing ALD technology, the method proposed by the application realizes atomic-level accurate deposition of platinum thin film in deep microstructure by optimizing precursor delivery kinetics and gradient thermal field collaborative control. Through the development of new type of precursor combination and temperature gradient control strategy, the problem of uniform deposition of platinum thin film in high aspect ratio structure is successfully solved.

[0091] 2) By adjusting the reaction gas pressure, cavity temperature, purging time, reaction time and other factors, atomic-level deposition is realized, which has great significance in the deposition process of platinum thin film in high aspect ratio structure.

[0092] 3) Significantly improved step coverage is realized in the structure of μm level line width / hundred μm level deep trench. By precisely controlling the heating temperature and mass flow of precursor, three-dimensional uniform growth of thin film in deep microstructure is ensured. This technology is suitable for advanced semiconductor packaging, MEMS devices and other fields.

[0093] Although the present application is described herein in conjunction with specific embodiments, those skilled in the art, by referring to the drawings, the disclosure, and the appended claims, can understand and implement other variations of the disclosed embodiments in the implementation of the claimed application. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. Some measures are described in mutually different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0094] Although the present application is described in conjunction with specific features and embodiments thereof, it is obvious that various modifications and combinations can be made thereto without departing from the spirit and scope of the application. Accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense, and it is intended that all such modifications, changes, combinations or equivalents that come within the scope of the following claims are to be included. Obviously, those skilled in the art can make various modifications and changes to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and changes of the present application fall within the scope of the claims and their equivalents, the present application is intended to include them.

Claims

1. A method for platinum thin film deposition for high aspect ratio structures, characterized by, The method comprises: Placing the pretreated substrate in a reaction vacuum chamber, vacuumizing the reaction vacuum chamber, and adjusting the temperature of the reaction vacuum chamber to a specific temperature; After the environment of the reaction vacuum chamber is stable, the modified platinum precursor and the oxidizing gas are sequentially introduced, and periodic intensive purging is performed; After repeating the deposition cycle for multiple times, a platinum thin film with a target thickness is obtained.

2. The method for platinum thin film deposition for high aspect ratio structures of claim 1, wherein, After the environment of the reaction vacuum chamber is stable, the modified platinum precursor and the oxidizing gas are sequentially introduced, and periodic intensive purging is performed, comprising: After the environment of the reaction vacuum chamber is stable, the modified platinum precursor is introduced, and the reaction is performed for a preset time and repeated for a preset number of times, and first purging is performed; The oxidizing gas is introduced, and second purging is performed; The modified platinum precursor and the oxidizing gas are sequentially introduced for periodic intensive purging until a preset condition is met.

3. The method for platinum thin film deposition for high aspect ratio structures of claim 1, wherein, The modified platinum precursor is trimethylmethylcyclopentadienyl platinum, and the oxidizing gas is oxygen.

4. The method for platinum thin film deposition for high aspect ratio structures of claim 2, wherein, When purging is performed, purging is performed in different intervals, and each cycle includes a reaction stage and a purging stage. The purging process adopts a double-temperature-zone design; when the modified platinum precursor is introduced for first purging, the corresponding first purging temperature is 75-85°C; when the oxidizing gas is introduced for second purging, the corresponding second purging temperature is 95-105°C.

5. The method for platinum thin film deposition for high aspect ratio structures of claim 1, wherein, The temperature of the sample table in the reaction vacuum chamber is heated to 290-310°C.

6. The method for platinum thin film deposition for high aspect ratio structures of claim 1, wherein, The pressure range of the reaction gas is set to 0.05 Torr to 0.15 Torr, the reaction time is controlled to be between 2 seconds and 15 seconds, the purging gas is nitrogen, the flow is adjusted to be in the range of 5 sccm to 10 sccm, and the purging time is 5 seconds to 15 seconds.

7. The method for platinum thin film deposition for high aspect ratio structures of claim 1, wherein, The pretreated substrate placed in the reaction vacuum chamber is a substrate with a pattern etched and made.

8. The method for platinum thin film deposition for high aspect ratio structures of claim 1, wherein, The platinum thin film deposition method is based on the deposition of the three-dimensional structure of the platinum thin film of the T-ALD process, and the atomic-level deposition of the platinum thin film in the deep microstructure is realized through the synergistic control of precursor delivery kinetics optimization and gradient thermal field.

9. A platinum thin film of high aspect ratio structures, characterized by, The platinum thin film of the high aspect ratio structure is deposited by the platinum thin film deposition method for high aspect ratio structure of any one of claims 1-8. The platinum thin film of the high aspect ratio structure is deposited by the platinum thin film deposition method for high aspect ratio structure of any one of claims 1-8.

Images