An interference-resistant, high-stability thin-film platinum temperature sensor for solid-state batteries

Abstract

The application discloses an anti-interference high-stability thin-film platinum temperature sensor for a solid-state battery and belongs to the thin-film platinum temperature sensor field. The anti-interference high-stability thin-film platinum temperature sensor for the solid-state battery comprises a detection part for detecting temperature and a connecting part for electrical connection, the detection part comprises a detection mechanism, at least two detection units are arranged on the detection mechanism, the detection unit comprises two electrode parts and at least one platinum thermistor, the detection unit is redundantly designed, the detection accuracy and reliability can be improved, single damage can be avoided to cause the region to be unable to be detected, and the redundant design is combined with the design of being suspended to realize rapid response and accurate detection, so that the stability is stronger, and the service life is longer.

Description

Technical Field

[0001] This invention relates to the field of thin-film platinum temperature sensor technology, and more particularly to a high-stability, interference-resistant thin-film platinum temperature sensor for solid-state batteries. Background Technology

[0002] Solid-state batteries are a new type of battery with practicality and safety. They will become an important component in new energy vehicles, energy storage batteries, energy storage power stations, drones, smartphones and other fields. They are a key link in the development of the new energy industry, a key area for development and one of the industries to be built into an advantageous industry, and have broad application prospects.

[0003] However, solid-state batteries also have the problem of poor safety under extreme environments such as excessively high or low temperatures. Therefore, installing temperature sensors inside solid-state batteries to monitor the temperature changes in real time, and then adjusting the battery's working state by controlling the internal temperature distribution, has become a hot research topic in solid-state battery safety management.

[0004] Current thin-film platinum temperature sensors use platinum (PT) thermistor chips for temperature detection, often PT100. These sensors primarily convert the temperature signal into a resistance signal, and then the resistance signal into a current signal. Finally, the temperature information is obtained by referring to the temperature curve of the platinum thermistor, and appropriate compensation and calibration can also be performed.

[0005] However, in practical use, currently only a single platinum thermistor is set on a single platinum thermistor chip. On the one hand, only one set of data can be detected. On the other hand, when it is damaged, it must be replaced, which requires disassembling the battery box, resulting in high disassembly and reassembly costs. Moreover, one set of data cannot be compared. When the platinum thermistor fails, the detected temperature may be too high or too low, making it impossible to make timely and accurate judgments. Furthermore, the current platinum thermistor is directly set on the substrate, which has a certain thermal conductivity. In this case, the heat conduction by the substrate will affect the accuracy of the platinum thermistor detection and may cause certain temperature fluctuations. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide an anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries that can overcome or at least partially solve the above problems.

[0007] To achieve the above objectives, the present invention adopts the following technical solution:

[0008] An anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries includes a detection section for detecting temperature and a connection section for electrical connection. The detection section includes a detection mechanism. It also includes at least two detection units disposed on the detection mechanism. Each detection unit includes two electrode portions and at least one platinum thermistor. At least one overhead mechanism is disposed on the detection mechanism, wherein the platinum thermistor is disposed on the overhead mechanism.

[0009] In a preferred embodiment of the present invention, an adjustment portion is provided at the connection between the electrode portion and the platinum thermistor.

[0010] In a preferred embodiment of the invention, the overhead mechanism includes a groove etched on the detection mechanism, and a support beam for supporting the platinum thermistor is formed on the upper side of the groove.

[0011] In a preferred embodiment of the present invention, the resistance values ​​of the plurality of platinum thermistors are different.

[0012] In a preferred embodiment of the invention, one of the platinum thermistors is disposed on a support beam.

[0013] In a preferred embodiment of the present invention, a platinum thermistor with a small resistance value is placed on a support beam.

[0014] In a preferred embodiment of the present invention, a plurality of through grooves are formed between the groove and the upper surface of the detection mechanism, and the plurality of through grooves are arranged circumferentially at equal intervals.

[0015] In a preferred embodiment of the present invention, the through groove is arranged in a trapezoidal shape.

[0016] In a preferred embodiment of the present invention, the electrode portions are arranged in parallel.

[0017] In a preferred embodiment of the present invention, the detection unit is provided in two sets, wherein the platinum thermistor of one detection unit is located at the middle position of the ends of the two electrode portions, and the platinum thermistor of the other detection unit is close to one of the electrode portions, and the close electrode portion is located on the side away from the central platinum thermistor.

[0018] Compared with the prior art, the present invention provides an anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries, which has the following advantages:

[0019] 1. This anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries employs a redundant design with two detection units on the same substrate. When one detection unit fails due to a malfunction, the other normal unit can continue to measure the temperature, ensuring uninterrupted temperature detection and improving the fault tolerance and operational stability of the entire temperature measurement system. The two detection units can mutually verify each other, improving detection accuracy. When there is a significant temperature deviation between the two, i.e., exceeding the preset threshold, the entire temperature measurement system can determine that one of the detection units may have drift, aging, or a local fault, avoiding measurement errors caused by false alarms from a single detection unit.

[0020] 2. This anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries uses an overhead design to lengthen and relatively isolate the heat conduction path between the platinum thermistor and the substrate, reducing the influence of the substrate and other surrounding structures on the temperature of the platinum thermistor. For example, in complex environments, the substrate may experience temperature fluctuations due to external factors. The overhead design can reduce the conduction of these fluctuations to the platinum film, allowing the platinum film to more accurately sense the true temperature of the object being measured and improving measurement accuracy.

[0021] 3. This anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries has a small heat capacity of air in the overhead part, so the platinum film exchanges heat with the external environment more directly and quickly. When the measured temperature changes, the platinum film can reach thermal equilibrium more quickly, thereby improving the thermal response speed of the sensor and enabling more timely feedback of temperature change information.

[0022] 4. This anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries uses an overhead design to give the support beam a certain buffering capacity, which alleviates stress concentration caused by thermal expansion and contraction and external extrusion, thereby improving the overall mechanical stability and service life of the sensor.

[0023] The parts of this device not covered herein are the same as or can be implemented using existing technologies. By designing the detection unit redundantly, this invention can improve detection accuracy and reliability, avoid the inability to detect the area due to single damage, and achieve rapid response and accurate detection through the overhead design combined with the redundant design, making it more stable and longer-lasting. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure of the present invention using a PI film as a carrier;

[0025] Figure 2 This is a schematic diagram of the structure of the present invention using a circuit board as a carrier. Figure 1 ;

[0026] Figure 3 This is a front view of the present invention using a circuit board as a carrier;

[0027] Figure 4 This is a schematic diagram of the structure of the present invention using a circuit board as a carrier. Figure 2 ;

[0028] Figure 5 This is a schematic diagram of the detection mechanism in this invention;

[0029] Figure 6 For the present invention Figure 5 Enlarged view of point A in the middle;

[0030] Figure 7 For the present invention Figure 5 Enlarged view of point B in the middle;

[0031] Figure 8 This is a partial structural diagram of the detection mechanism in this invention;

[0032] Figure 9 This is a schematic diagram of the structure of the present invention, in which detection units are arranged on both sides of the substrate. Figure 1 ;

[0033] Figure 10 This is a schematic diagram of the structure of the present invention, in which detection units are arranged on both sides of the substrate. Figure 2 ;

[0034] Figure 11 This is a schematic diagram of the structure of the present invention, in which detection units are arranged on both sides of the substrate. Figure 3 ;

[0035] Figure 12 This is a schematic diagram of the structure of the present invention, in which detection units are arranged on both sides of the substrate. Figure 4 .

[0036] In the diagram: 1. Detection section; 101. Connecting section; 2. Carrier; 3. Detection mechanism; 301. Substrate; 302. Support beam; 303. Groove; 4. Detection unit; 401. Platinum thermistor; 402. Electrode section; 403. Adjustment section; 5. Receiving groove; 501. Electrode groove; 502. Straight area; 503. Connecting area; 6. Nanoscale metal mesh; 601. Insulating layer. Detailed Implementation

[0037] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0038] Example: Refer to Figures 1-4 An anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries includes a detection unit 1 for detecting temperature and a connection unit 101 for electrical connection. The detection unit 1 includes a detection mechanism 3.

[0039] The detection unit 1 is placed in the temperature detection area of ​​the solid-state battery. The detection unit 1 is used to detect the temperature and then transmit the current signal through the connection unit 101. The detection unit 1 converts the temperature change into the resistance change and finally outputs the current change through the resistance change. The current signal is transmitted to the receiving end through the connection unit 101.

[0040] The transmission of current signals has a certain degree of anti-interference capability;

[0041] Reference Figure 5 It also includes at least two detection units 4, which are disposed on the detection mechanism 3. The detection unit 4 includes two electrode parts 402 and at least one platinum thermistor 401.

[0042] In specific applications of thin-film platinum temperature sensors, the detection unit 1 also includes a substrate 301, wherein the detection unit 4 can be placed on the substrate 301 by a sputtering process. In some application environments, the substrate 301 can be made of PI film, zirconia ceramic, etc. When zirconia ceramic is used, a carrier 2 can be set to support the entire detection unit 1.

[0043] Reference Figures 1-4 The carrier 2 on the detection unit 1 can be selected from plastic shell, metal shell, transparent sheath, circuit board, etc., depending on the actual application scenario. When it is used as a circuit board, the connection part 101 can transmit signals by means of, but not limited to, pins. When other carriers 2 are used, the connection part 101 can transmit signals by means of wires and plugs.

[0044] Reference Figure 1 When using PI film as substrate 301, carrier 2 is not required, and PI film can be used directly as carrier 2;

[0045] Current thin-film platinum temperature sensors use a detection unit 4 to detect the temperature of the area to be detected. When the temperature changes, the resistance of the platinum thermistor 401 changes, and the current in its circuit changes accordingly. This allows the temperature of the area to be detected to be obtained based on the temperature change curve. However, in actual use, if the detection unit 4 is damaged, the temperature of the area cannot be detected. In addition, with only one detection unit 4, it is difficult to detect minor damage that causes excessive errors in time, which may affect the accuracy of temperature detection in the area to be measured.

[0046] To address the current problems with thin-film platinum temperature sensors, the following implementation method can be adopted, as described below. Figure 5 and Figure 8By setting up a redundant design of two detection units 4 on the same substrate 301, when one of the detection units 4 fails due to a fault, the other normal unit can continue to measure the temperature, ensuring that the temperature detection is not interrupted and improving the fault tolerance and operational stability of the entire temperature measurement system.

[0047] In addition, since the size of the substrate 301 is generally small, and the two detection units 4 are located on the same substrate 301, their environments are basically the same. At this time, the two detection units 4 can perform mutual verification to improve detection accuracy. When the two temperatures deviate significantly, that is, when they exceed the preset threshold, the entire temperature measurement system can determine that one of the detection units 4 may have drift, aging, or local faults, thus avoiding measurement errors caused by false alarms from a single detection unit 4. However, in actual application scenarios, if the temperature deviation measured by the two detection units 4 exceeds the threshold, it is necessary to carry out overall maintenance. If one unit is damaged, the other can take over the measurement task. In addition, the entire temperature measurement system can also improve detection accuracy by performing algorithmic processing on the temperatures detected by two or more detection units 4. The algorithmic processing can use methods such as averaging.

[0048] In specific implementation methods, the following implementation methods may also be adopted, as referred to Figure 5 and Figure 6 An adjustment part 403 is provided at the connection between the electrode part 402 and the platinum thermistor 401.

[0049] In the manufacturing process of the thin-film platinum temperature sensor, an adjustment section 403 is set to adjust the resistance by finely adjusting parameters such as the shape and size of the notch. In addition, the edge effect of this area is increased, making the resistance change of the platinum thermistor 401 more significant, thereby improving the sensitivity of the entire sensor to temperature changes and enabling more accurate detection of subtle temperature changes.

[0050] To more accurately detect the true temperature of the object being measured and improve accuracy, the following implementation methods can also be used, as described below. Figure 6 It also includes at least one overhead mechanism disposed on the detection mechanism 3, wherein the platinum thermistor 401 is disposed on the overhead mechanism, the overhead mechanism includes a groove 303 etched on the detection mechanism 3, and a support beam 302 for supporting the platinum thermistor 401 is formed on the upper side of the groove 303.

[0051] Reference Figure 6 In the actual production process, a window is first opened on the substrate 301, and then it is etched to create a groove 303 with a depth of 200 micrometers, so that the support beam 302 is in a suspended state.

[0052] The elevated design offers the following technical advantages:

[0053] Reduced thermal conduction interference: The overhead design lengthens and relatively isolates the thermal conduction path between the platinum thermistor 401 and the substrate 301, reducing the influence of the substrate 301 and other surrounding structures on the temperature of the platinum thermistor 401. For example, in complex environments, the substrate 301 may experience temperature fluctuations due to external factors. The overhead design reduces the conduction of these fluctuations to the platinum film, allowing the platinum film to more accurately sense the true temperature of the object being measured and improving measurement accuracy.

[0054] Improved thermal response speed: Due to the small heat capacity of the air in the overhead section, the platinum film exchanges heat with the external environment more directly and quickly. When the measured temperature changes, the platinum film can reach thermal equilibrium more quickly, thereby improving the thermal response speed of the sensor and enabling it to provide more timely feedback on temperature changes.

[0055] Enhanced structural stress resistance: The overhead design gives the support beam 302 a certain buffering capacity, which alleviates stress concentration caused by thermal expansion and contraction and external extrusion, thereby improving the overall mechanical stability and service life of the sensor.

[0056] However, in actual production, the resistance values ​​of multiple platinum thermistors 401 can be set to be the same, which facilitates more accurate comparison.

[0057] For areas with fluctuating temperatures, the following implementation methods can be used, as described below. Figures 5-8 The resistance values ​​of the multiple platinum thermistors 401 are different.

[0058] When multiple platinum thermistors 401 are set with different resistances, one can be used as a reference resistor and the other as a measuring resistor. The platinum thermistors 401 with smaller resistance and larger resistance have the same diameter, and the main difference is in length. The platinum thermistors 401 with smaller resistance can cope with sudden local temperature rises and have a faster response speed, which can quickly trigger an alarm. The platinum thermistors 401 with larger resistance can provide higher accuracy and more precise resistance data.

[0059] The other two platinum thermistors 401 with different resistance values ​​can simplify fault location and distinguish between sensor faults and circuit faults. If the temperature measured by the circuit containing one of the platinum thermistors 401 is abnormal, it is a fault of the sensor itself. If the output resistance values ​​of the circuits containing the two platinum thermistors 401 do not conform to their respective resistance curves, but the ratio between them is normal, it is likely a circuit fault, such as an abnormal amplification factor of the acquisition module. In this case, the external circuit needs to be repaired.

[0060] In addition, the smaller resistance of the platinum thermistor 401 allows for rapid temperature prediction, which facilitates the adaptation of the temperature curve detected by the relatively larger resistance of the platinum thermistor 401. This results in more accurate temperature data and improves the accuracy of solid-state battery temperature detection.

[0061] In a specific implementation, refer to Figure 5 One of the platinum thermistors 401 is mounted on the support beam 302. Assuming that two or more platinum thermistors 401 have the same resistance, one of them is mounted on the support beam 302. This allows for faster acquisition of temperature data, achieving both rapid response and accurate detection. The platinum thermistor 401 that is not suspended in contact with the substrate 301 has a slower thermal response compared to the suspended platinum thermistor 401, but it is less affected by short-term environmental fluctuations, and the measured values ​​are more stable. This is more suitable for solid-state batteries that slowly heat up during use.

[0062] In a specific implementation, refer to Figure 5 For platinum thermistors 401 with different resistance values, the platinum thermistor 401 with the smaller resistance value is placed on the support beam 302.

[0063] Platinum thermistor 401 with low resistance is placed on support beam 302. Combined with its characteristics of low resistance and fast response, it can amplify the advantages of fast response, improve the accuracy of solid-state battery detection, and quickly adapt to emergency situations.

[0064] When etching the groove 303, a window is first opened and then etched. In practical applications, multiple through grooves are formed between the groove 303 and the upper surface of the detection mechanism 3. The multiple through grooves are arranged circumferentially at equal intervals.

[0065] Reference Figure 6 The through-slot is set in a regular trapezoidal shape.

[0066] This configuration makes the overhead support beam 302 more stable, allowing it to be subjected to more uniform force and to distribute stress evenly. This, in turn, improves the mechanical stability and lifespan of the sensor, thus meeting the requirements for compatibility with solid-state batteries.

[0067] Reference Figure 5 The electrode portion 402 is arranged in parallel.

[0068] The parallel-designed electrode section 402 has a certain degree of anti-interference performance.

[0069] In another implementation, refer to Figure 5The detection unit 4 is provided in two sets. The platinum thermistor 401 of one detection unit 4 is located in the middle of the ends of the two electrode portions 402. The platinum thermistor 401 of the other detection unit 4 is close to one of the electrode portions 402, and the close electrode portion 402 is located on the side away from the central platinum thermistor 401.

[0070] This design maximizes the spacing between two platinum thermistors 401 on a substrate 301 of the same size, preventing heat radiation from affecting the accuracy of detection. If the two platinum thermistors 401 are close together, and one of them responds quickly, it may radiate excess heat to the other platinum thermistor 401 after absorbing heat quickly. This may cause fluctuations and affect the detection accuracy and response speed.

[0071] In a preferred embodiment, refer to Figures 9-12 When the circuit board is used as carrier 2, the substrate 301 can be vertically mounted on the circuit board, and platinum thermistors 401 can be set on both sides of the substrate 301. On the one hand, the interference between the two platinum thermistors 401 can be reduced, and on the other hand, the width of the entire detection mechanism 3 can be reduced to meet a more compact installation environment.

[0072] Meanwhile, receiving grooves 5 and electrode grooves 501 are provided on both sides of the substrate 301. The electrode grooves 501 are connected to the receiving grooves 5. The receiving grooves 5 are composed of multiple straight areas 502 and connecting areas 503. The straight areas 502 and connecting areas 503 are serpentine. During the specific processing, the straight areas 502 of the receiving grooves 5 on both sides are parallel to each other and form an interleaved distribution. Platinum thermistors 401 and electrode parts 402 are processed in the receiving grooves 5 by sputtering. At this time, the straight parts of the two opposite platinum thermistors 401 are parallel to each other, and when opposite currents are passed through them, they have a certain double-wire winding function. According to the electromagnetic principle, the magnetic field generated by the reverse current will cancel each other out to a certain extent, thereby reducing the influence of external electromagnetic interference on the sensor measurement to a certain extent and having a certain effect on suppressing common-mode interference.

[0073] The argument for electromagnetic interference resistance:

[0074] Suppose we have an infinitely long straight current-carrying wire with a current I flowing through it. What is the magnitude of the magnetic field strength at a distance r from the wire? ;

[0075] The following can be derived from Ampere's circuital law:

[0076] Magnetic field generated by a single current-carrying conductor:

[0077] The direction of this magnetic field strength is determined by the right-hand screw law;

[0078] The magnetic field generated when two wires are wound in parallel and the currents are in opposite directions:

[0079] Let there be a distance d between two parallel wires, each carrying an equal but opposite current I. At a point P, located r from one wire and r+d from the other, the magnetic induction intensities produced by the two wires are respectively... and :

[0080] The magnetic field strength produced by the first wire at point P:

[0081]

[0082] The magnetic field strength produced by the second wire at point P:

[0083]

[0084] Since the currents in the two wires flow in opposite directions, according to the right-hand screw rule, the magnetic induction they produce at point P will also flow in opposite directions. Therefore, the resultant magnetic induction at point P is... for:

[0085]

[0086] When d is relatively small compared to r (i.e., the two wires are relatively close). The value will be much smaller than the magnetic induction intensity produced by a single wire at point P. In other words, by winding two wires in parallel with opposite current directions, the combined magnetic field strength generated in the surrounding space will be greatly reduced. Thus, when there is electromagnetic interference from the outside, the magnetic field generated by itself can better interact with the interfering magnetic field, reducing the impact of external electromagnetic interference on the platinum thermistor 401.

[0087] In addition, setting two detection units 4 on both sides of the substrate 301 provides higher redundancy. If one detection unit 4 is damaged for some reason, the other one can continue to work, avoiding damage to both detection units 4 caused by external factors on one side at the same time.

[0088] To further improve its anti-interference capability, the following implementation methods can be adopted, as referred to Figure 12 Nanoscale metal mesh 6 is set on both sides of the substrate 301. When the nanoscale metal mesh 6 encounters external interference, the free electrons in the nanoscale metal mesh 6 will generate an induced current under the action of the interference magnetic field. The induced current will generate an induced magnetic field opposite to the external field, thereby canceling part of the external electromagnetic interference, reducing the influence of electromagnetic interference on the platinum thermistor 401, and improving the accuracy and stability of the sensor measurement.

[0089] In addition, the nano-metal mesh has good thermal conductivity, which can quickly dissipate the heat of the platinum thermistor and quickly transfer the heat to the vicinity of the platinum thermistor 401, improving its detection accuracy and response speed. At the same time, it can avoid the self-heating effect from affecting its measurement accuracy, making the heat distribution of the platinum thermistor 401 more uniform. When the temperature changes, it makes the various parts of the platinum thermistor 401 more uniform, ensuring its thermal stability.

[0090] For the design of the nano-metal mesh 6, it can be processed on the substrate 301 or on the insulating layer 601. Finally, the insulating layer 601 is placed on the substrate 301. Different processes can be used depending on the substrate 301.

[0091] The depths of the receiving groove 5 and the electrode groove 501 are greater than the sputtering thickness of the platinum thermistor 401 and the electrode portion 402, so as to avoid the nano-metal mesh 6 from contacting the platinum thermistor 401 or the electrode portion 402.

[0092] However, in the actual processing, two or more detection units 4 can also be arranged by silk-line printing. The two adjacent detection units 4 are insulated by an insulating printing layer. This method also has a certain anti-interference performance.

[0093] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A high-stability, interference-resistant thin-film platinum temperature sensor for solid-state batteries, comprising a detection unit (1) for detecting temperature and a connection unit (101) for electrical connection, characterized in that, The testing department (1) includes a testing organization (3); It also includes at least two detection units (4) set on the detection mechanism (3); The detection unit (4) includes two electrode portions (402) and at least one platinum thermistor (401); At least one overhead mechanism is provided on the detection mechanism (3), wherein the platinum thermistor (401) is provided on the overhead mechanism; The overhead mechanism includes a groove (303) etched on the detection mechanism (3), and a support beam (302) is formed on the upper side of the groove (303) for supporting the platinum thermistor (401). The support beam (302) is suspended in mid-air; A receiving groove (5) and an electrode groove (501) are provided on both sides of the substrate (301). The electrode groove (501) is connected to the receiving groove (5). The receiving groove (5) is composed of multiple straight areas (502) and connecting areas (503). The straight areas (502) and connecting areas (503) are serpentine. The straight areas (502) of the receiving grooves (5) on both sides are parallel to each other and are staggered. Platinum thermistors (401) and electrode parts (402) are processed in the receiving groove (5) by sputtering. At this time, the straight parts of the two opposite platinum thermistors (401) are parallel to each other, and when opposite currents are passed through them, they have a double-wire winding function. Nanoscale metal meshes (6) are set on both sides of the substrate (301). When the nanoscale metal meshes (6) encounter external interference, the free electrons in the nanoscale metal meshes (6) will generate induced current under the action of the interference magnetic field. The induced current will generate an induced magnetic field opposite to the external field, thereby canceling out part of the external electromagnetic interference.

2. The anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries according to claim 1, characterized in that, An adjustment part (403) is provided at the connection between the electrode part (402) and the platinum thermistor (401).

3. The anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries according to claim 1, characterized in that, The resistance values ​​of the various platinum thermistors (401) are different.

4. The anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries according to claim 3, characterized in that, One of the platinum thermistors (401) is mounted on the support beam (302).

5. The anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries according to claim 4, characterized in that, A platinum thermistor (401) with low resistance is placed on a support beam (302).

6. The anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries according to claim 1, characterized in that, Multiple through grooves are formed between the groove (303) and the upper surface of the detection mechanism (3), and the multiple through grooves are arranged equidistantly in a circle.

7. The anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries according to claim 6, characterized in that, The through slot is arranged in a trapezoidal shape.

8. The anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries according to claim 1, characterized in that, The electrode portions (402) are arranged in parallel.

9. The anti-interference, high-stability thin-film platinum temperature sensor for solid-state batteries according to claim 1, characterized in that, The detection unit (4) is provided in two sets. The platinum thermistor (401) of one detection unit (4) is located in the middle of the ends of the two electrode parts (402). The platinum thermistor (401) of the other detection unit (4) is close to one of the electrode parts (402), and the close electrode part (402) is located on the side away from the central platinum thermistor (401).

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