An IGBT device loss evaluation method, device, medium and electronic equipment

Abstract

The present application relates to the field of chip, propose a kind of IGBT device loss evaluation method, device, medium and electronic equipment, according to the conduction current average of IGBT tube in each conduction section in current cycle, the conduction loss of IGBT tube is obtained, according to the switching current and stray inductance deviation value of IGBT tube in each time in current cycle, the switching loss of IGBT tube is obtained, according to the conduction current average of fast recovery diode in each conduction section in current cycle, the conduction loss of fast recovery diode is obtained;According to the conduction current and stray inductance deviation value corresponding to each time before turn-off of fast recovery diode in current cycle, the reverse recovery loss under fast recovery diode is obtained;According to the conduction loss, switching loss and reverse recovery loss obtained, determine the total loss of IGBT device.Accurate switching loss and reverse recovery loss are obtained by introducing stray inductance deviation value, and then the accuracy of total loss evaluation result is guaranteed.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of chips, in particular to an IGBT device loss evaluation method, device, medium and electronic equipment. BACKGROUND

[0002] IGBT devices are widely used in industrial power supplies, photovoltaic energy storage, new energy vehicles and other fields. The reliability of IGBT devices is closely coupled with their losses, and accurate loss calculation is a prerequisite for ensuring the long-term stable and reliable operation of IGBT devices. Balancing the calculation accuracy of losses and engineering efficiency and product cost is a difficult problem in designing power IGBT devices, especially accurate evaluation of IGBT device dynamic losses under various different working conditions is particularly important for the design of the device. SUMMARY

[0003] The purpose of the present application is to provide an IGBT device loss evaluation method, device, medium and electronic equipment to improve the above problems.

[0004] In order to achieve the above purpose, the technical scheme adopted by the embodiments of the present application is as follows:

[0005] In a first aspect, the embodiments of the present application provide an IGBT device loss evaluation method, which comprises:

[0006] According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the switching current and the stray inductance deviation value of the IGBT tube in each switching cycle, the switching loss of the IGBT tube at the junction temperature is obtained, wherein the switching current comprises the corresponding conduction current after each turn-on and the corresponding conduction current before each turn-off, and the stray inductance deviation value is the difference between the standard stray inductance of the test loss and the actual stray inductance of the test loss;

[0007]

[0008] According to the average value of the conduction current of the fast recovery diode in each conduction section in the current cycle, the conduction loss of the fast recovery diode at the junction temperature is obtained;

[0009] According to the corresponding conduction current before each turn-off of the fast recovery diode in the current cycle and the stray inductance deviation value, the reverse recovery loss of the fast recovery diode at the junction temperature is obtained;

[0010] According to the obtained conduction loss, switching loss and reverse recovery loss, the total loss of the IGBT device is determined. ​​​​

[0011] In a second aspect, an embodiment of the present application provides an IGBT device loss evaluation apparatus, the apparatus comprising:

[0012] a first processing unit configured to obtain, according to average values of conduction currents of the IGBT tube in each conduction period within a current cycle, conduction loss of the IGBT tube at a junction temperature , wherein the IGBT device comprises the IGBT tube and a fast recovery diode connected to an emitter and a collector of the IGBT tube;

[0013] the first processing unit is further configured to obtain, according to each switching current of the IGBT tube in the current cycle and a stray inductance deviation value, switching loss of the IGBT tube at the junction temperature , wherein the switching current comprises a corresponding conduction current after each turn-on and a corresponding conduction current before each turn-off, and the stray inductance deviation value is a difference between a standard stray inductance for testing loss and an actual stray inductance for testing loss;

[0014] the first processing unit is further configured to obtain, according to average values of conduction currents of the fast recovery diode in each conduction period within the current cycle, conduction loss of the fast recovery diode at the junction temperature ;

[0015] the first processing unit is further configured to obtain, according to the corresponding conduction current before each turn-off of the fast recovery diode in the current cycle and the stray inductance deviation value, reverse recovery loss of the fast recovery diode at the junction temperature ;

[0016] a second processing unit configured to determine total loss of the IGBT device according to the obtained conduction loss, switching loss and reverse recovery loss.

[0017] In a third aspect, an embodiment of the present application provides a storage medium having a computer program stored thereon, the computer program being executed by a processor to implement the method described above.

[0018] In a fourth aspect, an embodiment of the present application provides an electronic device, the electronic device comprising: a processor and a memory, the memory being configured to store one or more programs; and when the one or more programs are executed by the processor, the method described above is implemented.

[0019] Compared with the prior art, the IGBT device loss evaluation method, apparatus, medium and electronic device provided by an embodiment of the present application obtain, according to average values of conduction currents of the IGBT tube in each conduction period within a current cycle, conduction loss of the IGBT tube at a junction temperature , obtain, according to each switching current of the IGBT tube in the current cycle and a stray inductance deviation value, switching loss of the IGBT tube at the junction temperature the on-state loss of the fast recovery diode at the junction temperature under the on-state loss of the fast recovery diode at the junction temperature the reverse recovery loss of the fast recovery diode at the junction temperature under the reverse recovery loss of the fast recovery diode at the junction temperature the total loss of the IGBT device according to the obtained on-state loss, the switching loss and the reverse recovery loss. The switching loss and the reverse recovery loss are obtained by introducing the stray inductance deviation value, thereby ensuring the accuracy of the total loss evaluation result.

[0020] In order to make the above objectives, characteristics and advantages of the present application more apparent, the following preferred embodiments are specifically described below, and the accompanying drawings are referred to for a detailed description. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation to the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0022] Figure 1 The structural schematic diagram of the electronic device provided by the embodiments of the present application.

[0023] Figure 2 The flowchart of the IGBT device loss evaluation method provided by the embodiments of the present application.

[0024] Figure 3 The unit schematic diagram of the IGBT device loss evaluation device provided by the embodiments of the present application.

[0025] In the figure: 10-processor; 11-memory; 12-bus; 13-communication interface; 501-first processing unit; 502-second processing unit. DETAILED DESCRIPTION

[0026] In order to make the objectives, technical solutions and advantages of the embodiments of the present application more apparent, the following will combine the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, but not all the embodiments. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0027] The following detailed description of embodiments of the application in conjunction with the drawings will not only provide more detailed examples of the application, but will also provide one of ordinary skill in the art with an understanding of the application claimed and its best modes for carrying out the application.

[0028] It should be noted that like reference numerals and letters refer to like items in the accompanying drawings, and as such, definitions and explanations of those items need not be repeated for each of the accompanying drawings. Also, in the description of the application, the terms "first", "second", and the like, are used merely to distinguish one item from another, and do not imply or suggest any relative importance.

[0029] It should be noted that, in the present document, the terms such as first and second, etc. are merely used to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Also, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, so that a process, method, article, or apparatus that comprises a list of elements does not include only those elements, but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without more limitations, an element defined by the statement "comprising a" does not exclude the existence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0030] Some embodiments of the application will be described in detail in the following with reference to the drawings. The following embodiments and features of the embodiments can be combined with each other, without conflict.

[0031] The electronic device according to the embodiments of the present application can be a server device, a computer device, or a test bench device. Please refer to Figure 1 , a structural schematic diagram of the electronic device. The electronic device comprises a processor 10, a memory 11, and a bus 12. The processor 10 and the memory 11 are connected through the bus 12. The processor 10 is configured to execute an executable module stored in the memory 11, such as a computer program.

[0032] The processor 10 can be an integrated circuit chip with signal processing capability. In implementation, the steps of the IGBT device loss evaluation method can be completed by integrated logic circuits of hardware in the processor 10 or instructions in the form of software. The processor 10 described above can be a general processor, including a central processing unit (CPU), a network processor (NP), etc.; can also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component.

[0033] The memory 11 can include a high-speed random access memory (RAM), and can also include a non-volatile memory, such as at least one disk memory.

[0034] The bus 12 can be an ISA (Industry Standard Architecture) bus, a PCI (Peripheral Component Interconnect) bus, an EISA (Extended Industry Standard Architecture) bus, etc. Figure 1 Only one bidirectional arrow is used to represent, but it does not mean that there is only one bus 12 or one type of bus 12.

[0035] The memory 11 is used to store programs, such as programs corresponding to the IGBT device loss evaluation device. The IGBT device loss evaluation device includes at least one software function module which can be stored in the memory 11 in the form of software or firmware or solidified in the operating system (OS) of the electronic device. After receiving an execution instruction, the processor 10 executes the program to implement the IGBT device loss evaluation method.

[0036] Possibly, the electronic device provided by the embodiment of the present application further includes a communication interface 13. The communication interface 13 is connected with the processor 10 through the bus.

[0037] It should be understood that, Figure 1The structure shown is only a schematic diagram of the structure of part of the electronic device, and the electronic device can further include more or fewer components than those shown in the drawings, or have a different configuration from that shown in the drawings. Figure 1 The components shown in the drawings can be realized in hardware, software, or a combination thereof. Figure 1 Figure 1 The components shown in the drawings can be realized in hardware, software, or a combination thereof.

[0038] The IGBT device loss evaluation method provided by the embodiment of the application can be applied to, but is not limited to, the electronic device shown in the drawings, and the specific process is described with reference to the drawings. Figure 1 The IGBT device loss evaluation method includes S11, S12, S13, S14, and S15, which are specifically described as follows. Figure 2 S11, obtaining the conduction loss of the IGBT tube at the junction temperature according to the average value of the conduction current of each conduction section of the IGBT tube in the current cycle.

[0039] The IGBT device includes an IGBT tube and a fast recovery diode (FRD) connected to the emitter and the collector of the IGBT tube.

[0040] S12, obtaining the switching loss of the IGBT tube at the junction temperature according to the switching current and the stray inductance deviation value of the IGBT tube in the current cycle.

[0041] The switching current includes the conduction current corresponding to each turn-on and the conduction current corresponding to each turn-off before the turn-off, and the stray inductance deviation value is the difference between the standard stray inductance (recorded in the device specification) of the test loss and the actual stray inductance (obtained by measurement) of the test loss. S13, obtaining the conduction loss of the fast recovery diode at the junction temperature according to the average value of the conduction current of each conduction section of the fast recovery diode in the current cycle.

[0042] The IGBT device includes an IGBT tube and a fast recovery diode (FRD) connected to the emitter and the collector of the IGBT tube.

[0043] S14, obtaining the reverse recovery loss of the fast recovery diode at the junction temperature according to the conduction current corresponding to each turn-off before the turn-off of the fast recovery diode in the current cycle and the stray inductance deviation value.

[0044] S15, determining the total loss of the IGBT device according to the obtained conduction loss, switching loss, and reverse recovery loss. It should be understood that the total loss is the conduction loss of the IGBT tube at the junction temperature, the switching loss of the IGBT tube at the junction temperature, the reverse recovery loss of the fast recovery diode at the junction temperature, and the like.

[0045] It should be understood that the total loss is the conduction loss of the IGBT tube at the junction temperature, the switching loss of the IGBT tube at the junction temperature, the reverse recovery loss of the fast recovery diode at the junction temperature, and the like.

[0046] It should be understood that the total loss is the conduction loss of the IGBT tube at the junction temperature, the switching loss of the IGBT tube at the junction temperature, the reverse recovery loss of the fast recovery diode at the junction temperature, and the like. ​​​​​and the reverse recovery loss of a fast recovery diode at a junction temperature .

[0047] In the IGBT device loss evaluation method provided by the embodiment of the present application, the accurate switching loss and reverse recovery loss are obtained by introducing the stray inductance deviation value, and thus the accuracy of the total loss evaluation result is ensured.

[0048] On the basis of the foregoing, regarding the content in S11, the embodiment of the present application further provides an alternative implementation, please refer to the following. S11, according to the average value of the conduction current of the IGBT tube in each conduction section in a current cycle, obtaining the conduction loss of the IGBT tube at a junction temperature , comprising: S111 and S112, which are specifically described as follows.

[0049] S111, obtaining the conduction voltage drop corresponding to the average value of the conduction current of the IGBT tube in each conduction section at a junction temperature .

[0050] In an alternative implementation, first, the adjacent test junction temperature adjacent to the junction temperature and , wherein, ≤ ≤ . Optionally, when , the value of may be 125℃, the value of

[0051] may be 150℃. Then, according to the first group of fitting functions corresponding to the adjacent test junction temperature of the IGBT tube, obtaining the conduction voltage drop corresponding to the average value of the conduction current of the IGBT tube in each conduction section at the adjacent test junction temperature and

[0052] .

[0053]

[0054]

[0055] wherein, represents the average value of the conduction current of the IGBT tube in the nth conduction section, represents the reference on-state voltage drop of the IGBT tube at a junction temperature , represents the reference on-state resistance of the IGBT tube at a junction temperature , represents the reference on-state voltage drop of the IGBT tube at a junction temperature the on voltage corresponding to the current the reference on voltage corresponding to the current the reference on resistance corresponding to the current the on voltage corresponding to the current the on voltage corresponding to the current

[0056] Finally, according to the on voltage corresponding to the average on current of each on section of the IGBT at the junction temperature and the on voltage corresponding to the average on current of each on section of the IGBT at the junction temperature

[0057] the on voltage corresponding to the average on current of each on section of the IGBT at the junction temperature

[0058]

[0059] wherein, the on voltage corresponding to the current

[0060] S112, according to the average on current of each on section of the IGBT at the junction temperature , the on voltage and the time length of each on section, determines the on loss of the IGBT at the junction temperature

[0061] Optionally, the on loss of the IGBT at the junction temperature

[0062]

[0063] wherein, the current cycle of the IGBT, the junction temperature of the IGBT in the corresponding current cycle, the on loss of the IGBT at the junction temperature , m1 represents the total number of on sections of the IGBT in the current cycle, and n represents the nth on section of the IGBT in the current cycle, the average on current of the IGBT in the nth on section, the on loss of the IGBT at the junction temperature​​​​​​​​​​​ the on voltage drop of the corresponding current denotes the time length of the nth on section.

[0064] On the basis of the foregoing, regarding the content in S12, the embodiment of the application further provides an alternative implementation, please refer to the following. S12, according to the deviation value of the switching current and the stray inductance of the IGBT tube each time in the current cycle, obtaining the switching loss of the IGBT tube at the junction temperature , including: S121, S122 and S123, which are specifically described as follows.

[0065] S121, according to the on current corresponding to the IGBT tube each time after turning on at the junction temperature , determine the corresponding single on loss.

[0066] First, according to the second group of fitting functions corresponding to the adjacent test junction temperature of the IGBT tube, obtain the on current corresponding to the single on loss of the IGBT tube each time after turning on at the adjacent test junction temperature and .

[0067] It should be understood that the corresponding experiment is carried out at the adjacent test junction temperature, so as to obtain the corresponding data, and the first group of fitting functions and the second group of fitting functions can be obtained. The formula of the second group of fitting functions is:

[0068]

[0069]

[0070] wherein, denotes the on current corresponding to the IGBT tube after the ta4th time of turning on, denotes the rated current of the IGBT tube, , , , is the fitting parameter of the IGBT tube at the junction temperature , denotes the single pulse switching loss of the IGBT tube at the junction temperature , denotes the nominal resistance, the nominal resistance is the rated resistance connected between the collector and the emitter of the IGBT, denotes the single on loss corresponding to the ta4th time of turning on at the junction temperature , , , , is the fitting parameter of the IGBT tube at the junction temperature ,​ represents the single pulse switching loss of the IGBT tube at the junction temperature , the nominal resistance is the rated resistance connected between the collector and the emitter of the IGBT, represents the single switching loss corresponding to the ta4th turn-on at the junction temperature .

[0071] Then, according to the single switching loss corresponding to the on-state current of the IGBT tube after each turn-on at the adjacent test junction temperature and , the single switching loss corresponding to the on-state current of the IGBT tube after each turn-on at the junction temperature is determined.

[0072] The formula of the single switching loss corresponding to the on-state current of the IGBT tube after each turn-on at the junction temperature is:

[0073]

[0074] wherein, and represent the single switching loss corresponding to the ta4th turn-on at the junction temperature .

[0075] S122, obtaining the on-state current corresponding to the IGBT tube before each turn-off at the junction temperature , and determining the corresponding single switching loss.

[0076] First, according to the third group of fitting functions corresponding to the adjacent test junction temperature of the IGBT tube, the single switching loss corresponding to the on-state current of the IGBT tube before each turn-off at the adjacent test junction temperature and is obtained.

[0077] It should be understood that the corresponding experiment is carried out at the adjacent test junction temperature, so that the corresponding data is obtained, and the third group of fitting functions can be obtained. The third group of fitting functions is the same as the second group of fitting functions, which will not be described here.

[0078] Then, according to the single switching loss corresponding to the on-state current of the IGBT tube after each turn-off at the adjacent test junction temperature and , the single switching loss corresponding to the on-state current of the IGBT tube after each turn-off at the junction temperature is determined.

[0079] It should be understood that the formula of the single switching loss corresponding to the on-state current of the IGBT tube after each turn-off at the junction temperature is the same as the formula of the single switching loss corresponding to the on-state current of the IGBT tube after each turn-off at the junction temperature The formula of the single turn-on loss corresponding to the conduction current after each turn-on of the lower IGBT is the same, and thus will not be described again.

[0080] In S123, the switching loss of the IGBT at the junction temperature is obtained according to the obtained single turn-on loss, single turn-off loss and stray inductance deviation value.

[0081] Optionally, the formula of the switching loss of the IGBT at the junction temperature is as follows:

[0082]

[0083] wherein, the switching loss of the IGBT at the junction temperature is represented by, the current cycle of the IGBT device, the actual value of the direct current voltage applied to the IGBT assembly, the IGBT assembly comprising two series-connected IGBT devices (i.e., comprising the first IGBT device and the second IGBT device, the collector C of the IGBT device is connected to Vd+, the emitter E of the first IGBT device is connected to the collector C of the second IGBT device, the emitter E of the second IGBT device is connected to Vd-, and the gates of the two are connected to the control end of the three-phase inverter), the rated value of the direct current voltage applied to the IGBT assembly, the first fitting coefficient, the second fitting coefficient, n1 represents the total number of turn-ons of the IGBT in the current cycle, n2 represents the total number of turn-offs of the IGBT in the current cycle, ta4 represents the ta4th turn-on of the IGBT in the current cycle, and tb4 represents the tb4th turn-off of the IGBT in the current cycle, the junction temperature of the IGBT in the corresponding current cycle, the conduction current corresponding to the ta4th turn-on of the IGBT, the conduction current corresponding to the tb4th turn-off of the IGBT, the single turn-on loss corresponding to the ta4th turn-on at the junction temperature , the single turn-off loss corresponding to the tb4th turn-off at the junction temperature , the standard stray inductance of the test loss (recorded in the device specification), the actual stray inductance of the test loss (obtained by measurement).

[0084] On the basis of the foregoing, as to the content in S13, the embodiment of the present application further provides an alternative implementation, please refer to the following. S13, obtaining the conduction loss of the fast recovery diode at the junction temperature according to the average conduction current of the fast recovery diode at each conduction section in the current cycle, comprising: S131 and S132, which are specifically described as follows.

[0085] S131, obtaining the conduction voltage drop corresponding to the average conduction current of the fast recovery diode at each conduction section at the junction temperature .

[0086] It should be understood that the way of obtaining the conduction voltage drop corresponding to the average conduction current of the fast recovery diode at each conduction section at the junction temperature is the same as the way of obtaining the conduction voltage drop corresponding to the average conduction current of the IGBT at each conduction section at the junction temperature , which will not be described here.

[0087] S132, determining the conduction loss of the fast recovery diode at the junction temperature according to the average conduction current of the fast recovery diode at each conduction section, the conduction voltage drop and the time length of each conduction section at the junction temperature .

[0088] Optionally, the formula of the conduction loss of the fast recovery diode at the junction temperature is as follows:

[0089]

[0090] wherein, represents the current cycle of the IGBT device, represents the junction temperature of the fast recovery diode in the corresponding current cycle, represents the conduction loss of the fast recovery diode at the junction temperature , m2 represents the total number of conduction sections of the fast recovery diode in the current cycle, q represents the qth conduction section of the fast recovery diode in the current cycle, represents the average conduction current of the fast recovery diode at the qth conduction section, represents the conduction voltage drop corresponding to the current at the junction temperature , represents the time length of the qth conduction section.

[0091] On the basis of the foregoing, as to the content in S14, the embodiment of the present application further provides an alternative implementation, please refer to the following. S14, obtaining the conduction loss of the fast recovery diode at the junction temperature according to the average conduction current of the fast recovery diode before each turn-off in the current cycle and the stray inductance deviation value, comprising: S141 and S142, which are specifically described as follows.​​ The reverse recovery loss of the fast recovery diode at the junction temperature Tj is determined according to the corresponding on-state current of the fast recovery diode before each turn-off, and is denoted as Erev(Tj).

[0092] S141, determining the corresponding single reverse recovery loss according to the corresponding on-state current of the fast recovery diode before each turn-off at the junction temperature Tj.

[0093] It should be understood that the implementation of S141 is the same as the implementation of S121, which determines the corresponding single turn-on loss according to the corresponding on-state current of the IGBT after each turn-on at the junction temperature Tj, and will not be described here.

[0094] S142, determining the reverse recovery loss of the fast recovery diode at the junction temperature Tj according to the obtained single reverse recovery loss and the stray inductance deviation value.

[0095] Optionally, the formula of the reverse recovery loss of the fast recovery diode at the junction temperature Tj is:

[0096]

[0097] wherein, Erev(Tj) represents the reverse recovery loss of the fast recovery diode at the junction temperature Tj, Ic represents the current cycle of the IGBT device, Vd represents the actual value of the direct current voltage applied to the IGBT assembly, the IGBT assembly comprising two series-connected IGBT devices (i.e., comprising a first IGBT device and a second IGBT device, the collector C of the IGBT device is connected to Vd+, the emitter E of the first IGBT device is connected to the collector C of the second IGBT device, the emitter E of the second IGBT device is connected to Vd-, and the gate of the two is connected to the control end of the three-phase inverter), Vd represents the rated value of the direct current voltage applied to the IGBT assembly, n3 represents the fourth fitting coefficient, and n3 represents the total number of turn-offs of the fast recovery diode in the current cycle, and tc represents the tc-th turn-off of the fast recovery diode in the current cycle, Tj represents the junction temperature of the fast recovery diode in the corresponding current cycle, Ic represents the corresponding on-state current of the fast recovery diode before the tc-th turn-off, Erev(Tj) represents the single reverse recovery loss corresponding to the tc-th turn-off at the junction temperature Tj, Erev(Tj) represents the single reverse recovery loss corresponding to the tc-th turn-off at the junction temperature Tj, Erev(Tj) represents the single reverse recovery loss corresponding to the tc-th turn-off at the junction temperature Tj, Erev(Tj) represents the single reverse recovery loss corresponding to the tc-th turn-off at the junction temperature Tj, Erev(Tj) represents the single reverse recovery loss corresponding to the tc-th turn-off at the junction temperature Tj, ​​​​actual stray inductance (measured) representing test loss;

[0098] Please refer to Figure 3 , Figure 3 The IGBT device loss evaluation device provided by the embodiment of the application can be applied to the electronic device described above.

[0099] The IGBT device loss evaluation device comprises a first processing unit 501 and a second processing unit 502, which are specifically described as follows.

[0100] The first processing unit 501 is configured to obtain the conduction loss of the IGBT tube at the junction temperature according to the average value of the conduction current of each conduction section of the IGBT tube in a current cycle. The IGBT device comprises an IGBT tube and a fast recovery diode (FRD) connected to the emitter and the collector of the IGBT tube.

[0101] The first processing unit 501 is further configured to obtain the switching loss of the IGBT tube at the junction temperature according to the switching current and the stray inductance deviation value of the IGBT tube in each switching cycle. The switching current comprises the conduction current corresponding to each turn-on and the conduction current corresponding to each turn-off before the switching current, and the stray inductance deviation value is the difference between the standard stray inductance (recorded in the device specification) of the test loss and the actual stray inductance (measured) of the test loss.

[0102] The first processing unit 501 is further configured to obtain the conduction loss of the fast recovery diode at the junction temperature according to the average value of the conduction current of each conduction section of the fast recovery diode in a current cycle.

[0103] The first processing unit 501 is further configured to obtain the reverse recovery loss of the fast recovery diode at the junction temperature according to the conduction current corresponding to each turn-off before the switching current of the fast recovery diode in a current cycle and the stray inductance deviation value.

[0104] The second processing unit 502 is configured to determine the total loss of the IGBT device according to the obtained conduction loss, switching loss and reverse recovery loss.

[0105] It should be noted that the IGBT device loss evaluation device provided by the embodiment can perform the method process shown in the method process embodiment to achieve the corresponding technical effects. For brevity, the part not mentioned in the embodiment can refer to the corresponding content in the above embodiment.

[0106] ​​The embodiment of the present application further provides a storage medium which stores computer instructions and programs, and the computer instructions and programs perform the IGBT device loss evaluation method of the above embodiment when read and run. The storage medium can include a memory, a flash memory, a register or a combination thereof.

[0107] An electronic device, which can be a server device, a computer device or a test bench device, is provided below, and the electronic device can implement the IGBT device loss evaluation method as shown in Figure 1 The electronic device includes a processor 10, a memory 11 and a bus 12. The processor 10 can be a CPU. The memory 11 is used to store one or more programs, and the one or more programs perform the IGBT device loss evaluation method of the above embodiment when executed by the processor 10.

[0108] In summary, the embodiment of the present application provides an IGBT device loss evaluation method, device, medium and electronic device, according to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, according to the switching current and stray inductance deviation value of the IGBT tube in each switching in the current cycle, the switching loss of the IGBT tube at the junction temperature is obtained, according to the average value of the conduction current of the fast recovery diode in each conduction section in the current cycle, the conduction loss of the fast recovery diode at the junction temperature is obtained, according to the conduction current and stray inductance deviation value of the fast recovery diode corresponding to each time before the fast recovery diode is turned off in the current cycle, the reverse recovery loss of the fast recovery diode at the junction temperature is obtained, and according to the obtained conduction loss, switching loss and reverse recovery loss, the total loss of the IGBT device is determined. By introducing the stray inductance deviation value, the accurate switching loss and reverse recovery loss are obtained, and the accuracy of the total loss evaluation result is ensured.

[0109] The above only describes the preferred embodiments of the present application and is not used to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0110] It will be apparent to those skilled in the art that the application is not limited to the details of the above-exemplified embodiments and that the present application can be implemented in other particular forms without departing from the spirit or essential characteristics of the present application. The embodiments should therefore be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the above description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. No reference signs in the claims should be considered as limiting the scope of the claims with respect to the figures of the patent document.

Claims

1. A method of IGBT device loss evaluation, characterized by, The method comprises: According to the average value of the conduction current of the IGBT tube in each conduction section in a current cycle, the conduction loss of the IGBT tube under the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and the collector of the IGBT tube ​ Based on the switching current and stray inductance deviation values ​​of the IGBT transistor during each current cycle, the junction temperature of the IGBT transistor is obtained. Switching losses under various conditions, including: based on junction temperature The on-current of the IGBT is determined each time it is turned on, and the corresponding single-turn-on loss is determined; the junction temperature is obtained. The on-current before each turn-off of the IGBT is determined to identify the corresponding single turn-off loss. Based on the obtained single turn-on loss, single turn-off loss, and stray inductance deviation value, the junction temperature of the IGBT is determined. Switching losses below; The switch current comprises a corresponding conduction current after each turn-on and a corresponding conduction current before each turn-off, and the stray inductance deviation value is a difference between a standard stray inductance of the test loss and an actual stray inductance of the test loss. The switching loss of the IGBT tube under the junction temperature is calculated as: wherein, represents the switching loss of the IGBT tube at the junction temperature , represents the current cycle of the IGBT device, represents the actual value of the direct current voltage applied across the IGBT assembly, the IGBT assembly comprising two series-connected IGBT devices, represents the rated value of the direct current voltage applied across the IGBT assembly, represents the first fitting coefficient, represents the second fitting coefficient, n1 represents the total number of turn-ons of the IGBT tube within the current cycle, n2 represents the total number of turn-offs of the IGBT tube within the current cycle, ta4 represents the ta4th turn-on of the IGBT tube within the current cycle, and tb4 represents the tb4th turn-off of the IGBT tube within the current cycle, represents the junction temperature of the IGBT tube within the corresponding current cycle, represents the conduction current corresponding to the ta4th turn-on of the IGBT tube, represents the conduction current corresponding to the tb4th turn-off of the IGBT tube, represents the single turn-on loss corresponding to the ta4th turn-on at the junction temperature , represents the single turn-off loss corresponding to the tb4th turn-off at the junction temperature , represents the standard stray inductance for testing the loss, represents the actual stray inductance for testing the loss; According to the average value of the conduction current of the fast recovery diode in each conduction section in the current cycle, the conduction loss of the fast recovery diode at the junction temperature is obtained. According to the corresponding conduction current before each turn-off of the fast recovery diode in a current cycle and the stray inductance deviation value, the reverse recovery loss of the fast recovery diode at a junction temperature is obtained, including: determining the corresponding single reverse recovery loss according to the corresponding conduction current before each turn-off of the fast recovery diode at a junction temperature ; and obtaining the reverse recovery loss of the fast recovery diode at a junction temperature according to the obtained single reverse recovery loss and the stray inductance deviation value. The formula for the reverse recovery loss of the fast recovery diode at the junction temperature is: wherein, represents the reverse recovery loss of the fast recovery diode at the junction temperature under the junction temperature represents the third fitting coefficient, represents the fourth fitting coefficient, n3 represents the total number of turn-off of the fast recovery diode in the current cycle, and tc represents the tc-th turn-off of the fast recovery diode in the current cycle, represents the junction temperature of the fast recovery diode in the corresponding current cycle, represents the conduction current corresponding to the tc-th turn-off of the fast recovery diode, represents the single reverse recovery loss corresponding to the tc-th turn-off at the junction temperature under the junction temperature According to the obtained conduction loss, the switching loss, and the reverse recovery loss, a total loss of the IGBT device is determined.

2. The IGBT device loss evaluation method of claim 1, wherein, The average value of the conduction current of the IGBT tube in each conduction period is obtained, and the conduction loss of the IGBT tube at the junction temperature is obtained according to the average value of the conduction current of the IGBT tube in each conduction period. the conduction loss of the IGBT tube at the junction temperature is obtained according to the average value of the conduction current of the IGBT acquire the junction temperature the average on-state voltage drop of the lower IGBT tube corresponding to the average on-state current of each on-state section; According to the average value of the conduction current of each conduction section of the IGBT tube at the junction temperature , the conduction voltage drop of each conduction section, and the time length of each conduction section, the conduction loss of the IGBT tube at the junction temperature is determined.

3. The IGBT device loss evaluation method of claim 1, wherein, The average value of the conduction current of the fast recovery diode in each conduction section in a current cycle is obtained, and the conduction loss of the fast recovery diode at the junction temperature is obtained according to the average value. ​ acquiring a conduction voltage drop corresponding to an average value of a conduction current of each conduction section of the fast recovery diode at a junction temperature acquiring a conduction voltage drop corresponding to an average value of a conduction current of each conduction section of the fast recovery diode at a junction temperature According to the average value of the conduction current, the conduction voltage drop of each conduction section of the fast recovery diode at the junction temperature and the time length of each conduction section, the conduction loss of the fast recovery diode at the junction temperature is determined.

4. An IGBT device loss evaluation apparatus characterized by comprising: The device comprises: The first processing unit is configured to obtain the conduction loss of the IGBT tube at the junction temperature under the average value of the conduction current of each conduction section in the current cycle of the IGBT tube. The IGBT device comprises the IGBT tube and a fast recovery diode connected to the emitter and the collector of the IGBT tube. The first processing unit is further configured to obtain the junction temperature of the IGBT transistor based on the switching current and stray inductance deviation values ​​of the IGBT transistor during each current cycle. Switching losses under various conditions, including: based on junction temperature Determine the corresponding single-turn-on loss by analyzing the on-current of the IGBT after each turn-on; obtain the junction temperature... The on-current before each turn-off of the IGBT is determined to identify the corresponding single turn-off loss. Based on the obtained single turn-on loss, single turn-off loss, and stray inductance deviation value, the junction temperature of the IGBT is determined. Switching losses below; The switch current comprises a corresponding conduction current after each turn-on and a corresponding conduction current before each turn-off, and the stray inductance deviation value is a difference between a standard stray inductance of the test loss and an actual stray inductance of the test loss. The switching loss of the IGBT tube under the junction temperature is calculated as: wherein, represents the switching loss of the IGBT tube at the junction temperature , represents the current cycle of the IGBT device, represents the actual value of the direct current voltage applied across the IGBT assembly, the IGBT assembly comprising two series-connected IGBT devices, represents the rated value of the direct current voltage applied across the IGBT assembly, represents the first fitting coefficient, represents the second fitting coefficient, n1 represents the total number of turn-ons of the IGBT tube within the current cycle, n2 represents the total number of turn-offs of the IGBT tube within the current cycle, ta4 represents the ta4th turn-on of the IGBT tube within the current cycle, tb4 represents the tb4th turn-off of the IGBT tube within the current cycle, represents the junction temperature of the IGBT tube within the corresponding current cycle, represents the conduction current corresponding to the ta4th turn-on of the IGBT tube, represents the conduction current corresponding to the tb4th turn-off of the IGBT tube, represents the single turn-on loss corresponding to the ta4th turn-on at the junction temperature , represents the single turn-off loss corresponding to the tb4th turn-off at the junction temperature , represents the standard stray inductance of the test loss, represents the actual stray inductance of the test loss; The first processing unit is further configured to obtain the conduction loss of the fast-recovery diode at the junction temperature under the average conduction current of each conduction section in the current cycle according to the fast-recovery diode. ​ The first processing unit is further configured to obtain the reverse recovery loss of the fast recovery diode at the junction temperature according to the corresponding conduction current before each turn-off of the fast recovery diode in the current cycle and the stray inductance deviation value, including: determining the corresponding single reverse recovery loss according to the corresponding conduction current before each turn-off of the fast recovery diode at the junction temperature; obtaining the reverse recovery loss of the fast recovery diode at the junction temperature according to the obtained single reverse recovery loss and the stray inductance deviation value. ​​ The formula for the reverse recovery loss of a fast recovery diode at the junction temperature is wherein, represents the reverse recovery loss of the fast recovery diode at the junction temperature under the junction temperature, represents the third fitting coefficient, represents the fourth fitting coefficient, and n3 represents the total number of turn-off of the fast recovery diode in the current cycle, tc represents the tc-th turn-off of the fast recovery diode in the current cycle, represents the junction temperature of the fast recovery diode in the corresponding current cycle, represents the conduction current corresponding to the tc-th turn-off of the fast recovery diode, represents the single reverse recovery loss corresponding to the tc-th turn-off at the junction temperature under the junction temperature. A second processing unit is configured to determine a total loss of the IGBT device according to the obtained conduction loss, the switching loss, and the reverse recovery loss.

5. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program, when executed by a processor, implements the IGBT device loss evaluation method according to any one of claims 1-3.

6. An electronic device, comprising: Comprise: A processor and a memory, the memory being configured to store one or more programs; When the one or more programs are executed by the processor, the IGBT device loss evaluation method according to any one of claims 1-3 is implemented.

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