Differential high-bandwidth electro-optic modulator and optical communication architecture

Abstract

The present application relates to the field of optical communication technology, and more particularly to a differential high-bandwidth electro-optical modulator and an optical communication architecture. The differential high-bandwidth electro-optical modulator comprises: a first optical waveguide and a second optical waveguide arranged adjacently, a differential positive electrode arranged on a side of the first optical waveguide away from the second optical waveguide, a differential negative electrode arranged on a side of the second optical waveguide away from the first optical waveguide, a first N-type doped contact region arranged between the differential positive electrode and the first optical waveguide, and a second N-type doped contact region arranged between the differential negative electrode and the second optical waveguide; the trajectories and the spacing of the first optical waveguide and the second optical waveguide are adjusted according to the width of the first optical waveguide; the trajectories of one side of the first N-type doped contact region and one side of the second N-type doped contact region are the same as the trajectory of the first optical waveguide. By adjusting the waveguide trajectory, low optical coupling crosstalk is maintained, the spacing of the optical waveguide is reduced, the series resistance of the modulator is reduced, and the bandwidth and efficiency of the modulator are improved.

Description

Technical Field

[0001] This invention relates to the field of optical communication technology, and in particular to a differential high-bandwidth electro-optic modulator and optical communication architecture. Background Technology

[0002] Optoelectronic modulators are one of the core components of fiber optic communication systems, used to convert electrical signals into optical signals. With the rapid development of information technology, the performance requirements for optoelectronic modulators are becoming increasingly stringent, especially in fields such as data centers, high-speed optical interconnects, and microwave photonics, which pose serious challenges to the compactness, high efficiency, high bandwidth, and low power consumption of modulators.

[0003] Mach-Zehnder interferometer electro-optic modulators based on silicon photonics platforms utilize the plasma dispersion effect of silicon to introduce a special doping structure into silicon waveguides. By altering the carrier concentration in the doped semiconductors through an electric field, the effective refractive index of the silicon waveguide can be controlled to achieve phase or amplitude modulation of optical signals. However, traditional Mach-Zehnder interferometer modulators, while achieving high modulation efficiency and high bandwidth, require the addition of a DC bias connection in the middle of the interferometer arms to clad the reverse bias during modulation. Simultaneously, a certain distance must be maintained between the two optical waveguides in the Mach-Zehnder interferometer to avoid crosstalk. This physical distance leads to significant series resistance between the doped semiconductors, thus limiting the modulation bandwidth and efficiency.

[0004] The above content is only used to help understand the technical solution of the present invention and does not represent an admission that the above content is prior art. Summary of the Invention

[0005] The main objective of this invention is to provide a differential high-bandwidth electro-optic modulator and optical communication architecture, aiming to solve the technical problem that the large spacing between the two optical waveguides of the modulator in the prior art limits the modulation bandwidth and efficiency.

[0006] To achieve the above objectives, the present invention proposes a differential high-bandwidth electro-optic modulator, which includes: a differential positive electrode, a differential negative electrode, a first optical waveguide, a second optical waveguide, a first N-type doped contact region, and a second N-type doped contact region.

[0007] The first optical waveguide and the second optical waveguide are arranged adjacent to each other. The differential positive electrode is arranged on the side of the first optical waveguide away from the second optical waveguide, and the differential negative electrode is arranged on the side of the second optical waveguide away from the first optical waveguide. The first N-type doped contact region is arranged between the differential positive electrode and the first optical waveguide, and the second N-type doped contact region is arranged between the differential negative electrode and the second optical waveguide.

[0008] The trajectory and spacing of the first optical waveguide and the second optical waveguide are adjusted according to the width of the first optical waveguide;

[0009] The trajectories of the first N-type doped contact region near the first optical waveguide and the second N-type doped contact region near the second optical waveguide are the same as the trajectories of the first and second optical waveguides.

[0010] Optionally, the trajectories of the first optical waveguide, the second optical waveguide, the side of the first N-type doped contact region near the first optical waveguide, and the side of the second N-type doped contact region near the second optical waveguide are set as sinusoidal propagation trajectories;

[0011] The period and amplitude of the sinusoidal propagation trajectory are set according to the width of the first optical waveguide.

[0012] Optionally, both the differential positive electrode and the differential negative electrode include: electrode metal and radio frequency transmission line;

[0013] The electrode metal is connected to the radio frequency transmission line;

[0014] The radio frequency transmission line is electrically connected to the electrode metal;

[0015] The first N-type doped contact region and the second N-type doped contact region are disposed on the other side of the radio frequency transmission line in contact with the electrode metal.

[0016] Optionally, the shape of the radio frequency transmission line is set to be straight or curved, with the same trajectory as the first optical waveguide and the second optical waveguide.

[0017] Optionally, the differential high-bandwidth electro-optic modulator includes: a substrate layer, an oxide cladding layer, and a silicon waveguide layer disposed sequentially from bottom to top;

[0018] The top of the substrate layer is disposed in contact with the bottom of the oxide cladding layer, and the silicon waveguide layer is embedded in the oxide cladding layer;

[0019] The silicon waveguide layer is configured by ion doping to establish the positions of the first N-type doped contact region, the second N-type doped contact region, the first optical waveguide, and the second optical waveguide.

[0020] Optionally, the trajectories of the first optical waveguide, the second optical waveguide, the side of the first N-type doped contact region near the first optical waveguide, and the side of the second N-type doped contact region near the second optical waveguide are set as concentric circular curved propagation trajectories;

[0021] The period, distribution angle, and bending radius of the concentric circular curved propagation trajectory are set according to the width of the first optical waveguide;

[0022] Within one cycle, the bending radius of the first N-type doped contact region is greater than the bending radius of the first optical waveguide, which is greater than the bending radius of the second optical waveguide, which is greater than the bending radius of the second N-type doped contact region.

[0023] Optionally, both the first optical waveguide and the second optical waveguide are configured as multimode wide waveguides.

[0024] Optionally, a subwavelength grating waveguide region is provided between the first optical waveguide and the second optical waveguide.

[0025] Optionally, the differential high-bandwidth electro-optic modulator further includes: an input waveguide, a beam splitter, a first heating electrode, a second heating electrode, a beam combiner, and an output waveguide;

[0026] The input end of the beam splitter is connected to the input waveguide, the first output end of the beam splitter is connected to the first optical waveguide, the second output end of the beam splitter is connected to the second optical waveguide, the other end of the first optical waveguide is connected to the first input end of the beam combiner after passing through the first heating electrode, the other end of the second optical waveguide is connected to the second input end of the beam combiner after passing through the second heating electrode, and the output end of the beam combiner is connected to the output waveguide.

[0027] In addition, to achieve the above objectives, the present invention also provides an optical communication architecture, which includes a differential high-bandwidth electro-optic modulator as described above.

[0028] This invention provides a differential high-bandwidth electro-optic modulator and optical communication architecture. The differential high-bandwidth electro-optic modulator includes: a differential positive electrode, a differential negative electrode, a first optical waveguide, a second optical waveguide, a first N-type doped contact region, and a second N-type doped contact region. The first and second optical waveguides are arranged adjacent to each other. The differential positive electrode is disposed on the side of the first optical waveguide away from the second optical waveguide, and the differential negative electrode is disposed on the side of the second optical waveguide away from the first optical waveguide. The first N-type doped contact region is disposed between the differential positive electrode and the first optical waveguide, and the second N-type doped contact region is disposed between the differential negative electrode and the second optical waveguide. The trajectory and spacing of the first and second optical waveguides are adjusted according to the width of the first optical waveguide. The trajectories of the first N-type doped contact region near the first optical waveguide and the second N-type doped contact region near the second optical waveguide are the same as the trajectories of the first and second optical waveguides. By adjusting the waveguide trajectories, low optical coupling crosstalk is maintained, the spacing of the optical waveguides is reduced, the series resistance of the modulator is decreased, and the bandwidth and efficiency of the modulator are improved. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of the phase shift arm in the first embodiment of the differential high-bandwidth electro-optic modulator of the present invention;

[0031] Figure 2 This is a schematic diagram of the overall structure of the first embodiment of the differential high-bandwidth electro-optic modulator of the present invention;

[0032] Figure 3 A schematic cross-sectional structure diagram of the first embodiment of the differential high-bandwidth electro-optic modulator;

[0033] Figure 4 A schematic diagram of a bent radio frequency transmission line structure for a first embodiment of the differential high-bandwidth electro-optic modulator;

[0034] Figure 5 This is a schematic diagram of the phase shift arm structure of the second embodiment of the differential high-bandwidth electro-optic modulator of the present invention;

[0035] Figure 6 This is a schematic diagram of the overall structure of the second embodiment of the differential high-bandwidth electro-optic modulator of the present invention;

[0036] Figure 7 This is a schematic diagram of the phase shift arm structure of the third embodiment of the differential high-bandwidth electro-optic modulator of the present invention;

[0037] Figure 8 This is a schematic diagram of the overall structure of the third embodiment of the differential high-bandwidth electro-optic modulator of the present invention;

[0038] Figure 9 This is a schematic diagram of the phase shift arm structure of the fourth embodiment of the differential high-bandwidth electro-optic modulator of the present invention;

[0039] Figure 10 This is a schematic diagram of the overall structure of the fourth embodiment of the differential high-bandwidth electro-optic modulator of the present invention.

[0040] Explanation of reference numerals: 10, Differential positive electrode; 20, Differential negative electrode; 30, First optical waveguide; 40, Second optical waveguide; 50, First N-type doped contact region; 60, Second N-type doped contact region; 70, Electrode metal; 80, Radio frequency transmission line; 101, Input waveguide; 102, Beam splitter; 103, First heating electrode; 104, Second heating electrode; 105, Beam combiner; 106, Output waveguide; 201, Substrate layer; 202, Oxide cladding layer; 203, Silicon waveguide layer.

[0041] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0042] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0043] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0044] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0045] Furthermore, the use of terms such as "first" and "second" in this invention is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

[0046] Mach-Zehnder interferometer electro-optic modulators based on silicon photonics platforms offer advantages such as small size, CMOS process compatibility, and high modulation efficiency, making them a mainstream choice. Their working principle utilizes the plasma dispersion effect of silicon material to introduce a special doping structure into the silicon waveguide. By changing the carrier concentration in the doped semiconductor through an electric field, the effective refractive index of the silicon waveguide is modulated to achieve phase or amplitude modulation of the optical signal. However, while traditional Mach-Zehnder interferometer modulators achieve high modulation efficiency and high bandwidth, they require adding a DC bias connection in the middle of the interferometer arms to clad the reverse bias during modulation. Simultaneously, a certain distance must be maintained between the two optical waveguides in the Mach-Zehnder interferometer to avoid crosstalk. This physical distance leads to significant series resistance between the doped semiconductors, thus limiting the modulation bandwidth and efficiency.

[0047] Currently, the main approach to reducing the series resistance of Mach-Zehnder interferometer electro-optic modulators is to increase the silicon doping concentration in the semiconductor structure. However, this exacerbates light absorption in the waveguides, thus increasing modulator losses. Alternatively, voltage adaptation of the two semiconductor junction diodes can be achieved by using series connections with opposite polarities, thereby reducing the modulator's series resistance. Simultaneously, waveguides of different widths can be introduced to achieve phase mismatch and reduce optical coupling crosstalk between the two interferometer waveguides. However, when the waveguide width varies, the waveguide spacing still needs to be increased, making it impossible to maintain compactness throughout the entire phase-shift region.

[0048] The present invention proposes a differential high-bandwidth electro-optic modulator that employs a sinusoidal propagation trajectory waveguide based on an artificial gauge field. By controlling the period, amplitude, and width of the waveguide sinusoidal trajectory, the spacing between the two optical waveguides of the interferometer arm and between the optical waveguide and the doped contact region can be minimized without significant crosstalk, thereby reducing the series resistance of the modulator and improving the modulation bandwidth and efficiency.

[0049] Reference Figure 1 , Figure 1 This is a schematic diagram of the phase shift arm structure in the first embodiment of the differential high-bandwidth electro-optic modulator of the present invention, as shown below. Figure 1As shown, in this embodiment, the differential high-bandwidth electro-optic modulator includes: a differential positive electrode 10, a differential negative electrode 20, a first optical waveguide 30, a second optical waveguide 40, a first N-type doped contact region 50, and a second N-type doped contact region 60; the first optical waveguide 30 and the second optical waveguide 40 are arranged adjacent to each other, the differential positive electrode 10 is disposed on the side of the first optical waveguide 30 away from the second optical waveguide 40, the differential negative electrode 20 is disposed on the side of the second optical waveguide 40 away from the first optical waveguide 30, the first N-type doped contact region 50 is disposed between the differential positive electrode 10 and the first optical waveguide 30, and the second N-type doped contact region 60 is disposed between the differential negative electrode 20 and the second optical waveguide 40.

[0050] It should be noted that the trajectory and spacing of the first optical waveguide 30 and the second optical waveguide 40 are adjusted according to the width of the first optical waveguide 30; the trajectories of the first N-type doped contact region 50 near the first optical waveguide 30 and the second N-type doped contact region 60 near the second optical waveguide 40 are the same as the trajectories of the first optical waveguide 30 and the second optical waveguide 40.

[0051] Specifically, the trajectories of the first optical waveguide 30, the second optical waveguide 40, the side of the first N-type doped contact region 50 near the first optical waveguide 30, and the side of the second N-type doped contact region 60 near the second optical waveguide 40 are set as sinusoidal propagation trajectories; the period and amplitude of the sinusoidal propagation trajectory are set according to the width of the first optical waveguide 30.

[0052] It should be understood that using a waveguide structure based on an artificial gauge field as the phase-shifting arm in a Mach-Zehnder interferometer electro-optic modulator can minimize the spacing between the two optical waveguides in the interferometer arm and between the optical waveguide and the doped contact region without significant crosstalk by controlling the period, amplitude, and width of the waveguide sinusoidal trajectory. This reduces the series resistance of the modulator and improves its modulation bandwidth and efficiency.

[0053] It is understandable that, in addition to using a sinusoidal propagation trajectory waveguide structure as the phase-shifting arm of a Mach-Zehnder interferometer electro-optic modulator, it is also possible to achieve the smallest possible spacing between two optical waveguides without significant crosstalk by using concentric circular curved waveguides, multimode wide waveguides, and subwavelength grating waveguides. This embodiment uses a sinusoidal propagation trajectory waveguide structure as an example for illustration.

[0054] The differential positive electrode 10 and the differential negative electrode 20 each include an electrode metal 70 and a radio frequency transmission line 80; the electrode metal 70 is connected to the radio frequency transmission line 80; the radio frequency transmission line 80 is electrically connected to the electrode metal 70; the first N-type doped contact region 50 and the second N-type doped contact region 60 are disposed on the other side of the contact between the radio frequency transmission line 80 and the electrode metal 70.

[0055] It should be noted that after the widths of the first and second optical waveguides with sinusoidal distribution are determined, the period 207 and amplitude 208 of the sinusoidal waveguide can be determined by the design method based on artificial gauge fields. Then, the minimum spacing between the first and second optical waveguides and the spacing between the N-type doped contact region and the optical waveguide can be determined by simulation using the finite difference time domain (FDTD) method, under the condition that crosstalk is allowed.

[0056] Reference Figure 2 , Figure 2 This is a schematic diagram of the overall structure of a first embodiment of the differential high-bandwidth electro-optic modulator of the present invention. The differential high-bandwidth electro-optic modulator further includes: an input waveguide 101, a beam splitter 102, a first heating electrode 103, a second heating electrode 104, a beam combiner 105, and an output waveguide 106. The input end of the beam splitter 102 is connected to the input waveguide 101, the first output end of the beam splitter 102 is connected to the first optical waveguide 30, the second output end of the beam splitter 102 is connected to the second optical waveguide 40, the other end of the first optical waveguide 30 is connected to the first input end of the beam combiner 105 via the first heating electrode 103, the other end of the second optical waveguide 40 is connected to the second input end of the beam combiner 105 via the second heating electrode 104, and the output end of the beam combiner 105 is connected to the output waveguide 106.

[0057] It should be noted that, along the light propagation direction: light enters the modulator through the input waveguide 101, passes through the optical beamsplitter 102, enters the first optical waveguide 30 and the second optical waveguide 40, is finally combined by the optical combiner 105, and outputs through the output waveguide 106. For the radio frequency (RF) signal transmission direction: the differential positive electrode 10 and the differential negative electrode 20 respectively receive the RF differential signal. The RF differential signal enters the RF transmission line 80 through the electrode metal 70, passes through the metal via connecting the electrode metal 70 to the N-type doped contact region, and changes the carrier concentration in the active doped region (the first N-type doped contact region 50 and the second N-type doped contact region 60) by modulating the voltage, thereby controlling the effective refractive index of the first optical waveguide 30 and the second optical waveguide 40. The first heating electrode 103 and the second heating electrode 104 control the relative phase of the optical signals in the two optical waveguides through the thermo-optic effect.

[0058] Furthermore, referring to Figure 3 , Figure 3 This is a cross-sectional structural diagram of a first embodiment of the differential high-bandwidth electro-optic modulator of the present invention. The differential high-bandwidth electro-optic modulator includes, from bottom to top, a substrate layer 201, an oxide cladding layer 202, and a silicon waveguide layer 203; the top of the substrate layer 201 is in contact with the bottom of the oxide cladding layer 202, and the silicon waveguide layer 203 is embedded in the oxide cladding layer 202; the silicon waveguide layer 203 is configured with first N-type doped contact regions 50, second N-type doped contact regions 60, first optical waveguide 30, and second optical waveguide 40 by ion doping. It also includes a first spacing 204 between the first optical waveguide and the first N-type doped contact region, a second spacing 205 between the second optical waveguide and the second N-type doped contact region, and a third spacing 206 between the first optical waveguide and the second optical waveguide. In addition to using... Figure 3 In addition to the cross-sectional structure of the electro-optic modulator shown, the silicon-insulator-silicon capacitor modulator structure is also applicable.

[0059] It should be understood that the radio frequency transmission line can be configured as a straight line or a curved line following the same trajectory as the first and second optical waveguides, depending on design requirements. In this embodiment, to reduce high-frequency transmission loss, a straight line is preferred. (Refer to...) Figure 4 , Figure 4 This is a schematic diagram of the curved radio frequency transmission line structure of the first embodiment of the differential high bandwidth electro-optic modulator of the present invention.

[0060] In this embodiment, the differential high-bandwidth electro-optic modulator includes: a differential positive electrode, a differential negative electrode, a first optical waveguide, a second optical waveguide, a first N-type doped contact region, and a second N-type doped contact region. The first optical waveguide and the second optical waveguide are arranged adjacent to each other. The differential positive electrode is disposed on the side of the first optical waveguide away from the second optical waveguide, and the differential negative electrode is disposed on the side of the second optical waveguide away from the first optical waveguide. The first N-type doped contact region is disposed between the differential positive electrode and the first optical waveguide, and the second N-type doped contact region is disposed between the differential negative electrode and the second optical waveguide. The trajectory and spacing of the first and second optical waveguides are adjusted according to the width of the first optical waveguide. The trajectories of the first N-type doped contact region near the first optical waveguide and the second N-type doped contact region near the second optical waveguide are the same as the trajectories of the first and second optical waveguides. By adjusting the waveguide trajectories, low optical coupling crosstalk is maintained, the spacing of the optical waveguides is reduced, the series resistance of the modulator is reduced, and the bandwidth and efficiency of the modulator are improved.

[0061] Reference Figure 5 , Figure 5 This is a schematic diagram of the phase shift arm structure of the second embodiment of the differential high-bandwidth electro-optic modulator of the present invention, as shown below. Figure 5 As shown, in this embodiment, the contents that are the same as or similar to those in the first embodiment described above can be referred to the above description and will not be repeated hereafter. The trajectories of the first optical waveguide 30, the second optical waveguide 40, the side of the first N-type doped contact region 50 near the first optical waveguide 30, and the side of the second N-type doped contact region 60 near the second optical waveguide 40 are set as concentric circular curved propagation trajectories.

[0062] It should be noted that the period, distribution angle 305, and bending radius of the concentric circle bending propagation trajectory are set according to the width of the first optical waveguide 30; within one period, the first bending radius 301 of the first N-type doped contact region 50 is greater than the second bending radius 302 of the first optical waveguide 30, which is greater than the third bending radius 303 of the second optical waveguide 40, which is greater than the fourth bending radius 304 of the second N-type doped contact region 60.

[0063] Reference Figure 6 , Figure 6 This is a schematic diagram of the overall structure of the second embodiment of the differential high-bandwidth electro-optic modulator of the present invention. Similar to the first embodiment described above, the complete differential high-bandwidth electro-optic modulator includes, in addition to the phase shift arm structure, an input waveguide 101, a beam splitter 102, a first heating electrode 103, a second heating electrode 104, a beam combiner 105, and an output waveguide 106.

[0064] In this embodiment, the trajectories of the first optical waveguide, the second optical waveguide, the side of the first N-type doped contact region near the first optical waveguide, and the side of the second N-type doped contact region near the second optical waveguide are set as concentric circular curved propagation trajectories. The period, distribution angle, and bending radius of the concentric circular curved propagation trajectory are set according to the width of the first optical waveguide. Within one period, the bending radius of the first N-type doped contact region is greater than the bending radius of the first optical waveguide, which is greater than the bending radius of the second optical waveguide, which is greater than the bending radius of the second N-type doped contact region. By using the concentric circular curved waveguide structure of the artificial gauge field as the phase shift arm of the modulator, a very small and consistent spacing is maintained throughout the entire phase shift arm region while maintaining very low optical coupling crosstalk, thereby significantly reducing the series resistance of the modulator and improving the modulation bandwidth and efficiency.

[0065] Reference Figure 7 , Figure 7This is a schematic diagram of the phase-shifting arm structure of the third embodiment of the differential high-bandwidth electro-optic modulator of the present invention. Based on the above embodiments, a third embodiment of the differential high-bandwidth electro-optic modulator of the present invention is proposed. In this embodiment, content that is the same as or similar to that in the above embodiments can be referred to the above description and will not be repeated hereafter. Figure 7 As shown, both the first optical waveguide and the second optical waveguide are configured as multimode wide waveguides.

[0066] Reference Figure 8 , Figure 8 This is a schematic diagram of the overall structure of the third embodiment of the differential high-bandwidth electro-optic modulator of the present invention. Similar to the first embodiment described above, the complete differential high-bandwidth electro-optic modulator includes, in addition to the phase shift arm structure, an input waveguide 101, a beam splitter 102, a first heating electrode 103, a second heating electrode 104, a beam combiner 105, and an output waveguide 106.

[0067] In this embodiment, both the first optical waveguide and the second optical waveguide are configured as multimode wide waveguides as phase shift arms of the modulator. While maintaining very low optical coupling crosstalk, they maintain a consistent and very small spacing throughout the entire phase shift arm region, thereby significantly reducing the series resistance of the modulator and improving the modulation bandwidth and efficiency.

[0068] Reference Figure 9 , Figure 9 This is a schematic diagram of the phase-shifting arm structure of the fourth embodiment of the differential high-bandwidth electro-optic modulator of the present invention. Based on the above embodiments, a fourth embodiment of the differential high-bandwidth electro-optic modulator of the present invention is proposed. In this embodiment, content that is the same as or similar to that in the above embodiments can be referred to the above description and will not be repeated hereafter. Figure 9 As shown, a subwavelength grating waveguide region 401 is disposed between the first optical waveguide and the second optical waveguide. The subwavelength grating waveguide has a length 402, a width 403, a period 404, and a fourth spacing 405 between the subwavelength grating waveguide and the first or second optical waveguide.

[0069] Reference Figure 10 , Figure 10 This is a schematic diagram of the overall structure of the fourth embodiment of the differential high-bandwidth electro-optic modulator of the present invention. Similar to the first embodiment described above, the complete differential high-bandwidth electro-optic modulator includes, in addition to the phase-shifting arm structure, an input waveguide 101, a beam splitter 102, a first heating electrode 103, a second heating electrode 104, a beam combiner 105, and an output waveguide 106.

[0070] In this embodiment, a subwavelength grating waveguide region is provided between the first optical waveguide and the second optical waveguide as a phase shift arm of the modulator. While maintaining very low optical coupling crosstalk, a very small and consistent spacing is maintained throughout the entire phase shift arm region, thereby significantly reducing the series resistance of the modulator and improving the modulation bandwidth and efficiency.

[0071] In addition, the present invention also discloses an optical communication architecture, which includes the aforementioned differential high-bandwidth electro-optic modulator.

[0072] Since the light source device adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be repeated here.

[0073] The above are merely preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any equivalent structural or procedural transformations made based on the description and drawings of the present invention, or direct or indirect applications in other related technical fields, are similarly included within the scope of protection of the present invention.

[0074] Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0075] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0076] Furthermore, the use of terms such as "first" and "second" in this invention is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

Claims

1. A differential high-bandwidth electro-optic modulator, characterized by, The differential high-bandwidth electro-optical modulator comprises a differential positive electrode, a differential negative electrode, a first optical waveguide, a second optical waveguide, a first N-type doped contact region, and a second N-type doped contact region; The first optical waveguide and the second optical waveguide are arranged adjacently, the differential positive electrode is arranged on the side of the first optical waveguide away from the second optical waveguide, the differential negative electrode is arranged on the side of the second optical waveguide away from the first optical waveguide, the first N-type doped contact region is arranged between the differential positive electrode and the first optical waveguide, and the second N-type doped contact region is arranged between the differential negative electrode and the second optical waveguide; A first spacing is arranged between the first optical waveguide and the first N-type doped contact region, a second spacing is arranged between the second optical waveguide and the second N-type doped contact region, and a third spacing is arranged between the first optical waveguide and the second optical waveguide; The trajectories of the first optical waveguide and the second optical waveguide, the first spacing, the second spacing, and the third spacing are adjusted according to the width of the first optical waveguide; The trajectories of the side of the first N-type doped contact region close to the first optical waveguide and the side of the second N-type doped contact region close to the second optical waveguide are the same as the trajectories of the first optical waveguide and the second optical waveguide; The trajectories of the first optical waveguide, the second optical waveguide, the side of the first N-type doped contact region close to the first optical waveguide, and the side of the second N-type doped contact region close to the second optical waveguide are arranged as sinusoidal propagation trajectories; The period and amplitude of the sinusoidal propagation trajectories are set according to the width of the first optical waveguide.

2. A differential high-bandwidth electro-optic modulator, characterized by, The differential high-bandwidth electro-optical modulator comprises a differential positive electrode, a differential negative electrode, a first optical waveguide, a second optical waveguide, a first N-type doped contact region, and a second N-type doped contact region; The first optical waveguide and the second optical waveguide are arranged adjacently, the differential positive electrode is arranged on the side of the first optical waveguide away from the second optical waveguide, the differential negative electrode is arranged on the side of the second optical waveguide away from the first optical waveguide, the first N-type doped contact region is arranged between the differential positive electrode and the first optical waveguide, and the second N-type doped contact region is arranged between the differential negative electrode and the second optical waveguide; A first spacing is arranged between the first optical waveguide and the first N-type doped contact region, a second spacing is arranged between the second optical waveguide and the second N-type doped contact region, and a third spacing is arranged between the first optical waveguide and the second optical waveguide; The trajectories of the first optical waveguide and the second optical waveguide, the first spacing, the second spacing, and the third spacing are adjusted according to the width of the first optical waveguide; The trajectories of the side of the first N-type doped contact region close to the first optical waveguide and the side of the second N-type doped contact region close to the second optical waveguide are the same as the trajectories of the first optical waveguide and the second optical waveguide; The first optical waveguide, the second optical waveguide, the side of the first N-type doped contact region close to the first optical waveguide, and the side of the second N-type doped contact region close to the second optical waveguide are arranged as a concentric circular curved propagation track. The period, distribution angle, and bending radius of the concentric circular curved propagation track are set according to the width of the first optical waveguide. In one period, the bending radius of the first N-type doped contact region is greater than the bending radius of the first optical waveguide, which is greater than the bending radius of the second optical waveguide, which is greater than the bending radius of the second N-type doped contact region.

3. A differential high-bandwidth electro-optic modulator, characterized by, The differential high-bandwidth electro-optical modulator comprises a differential positive electrode, a differential negative electrode, a first optical waveguide, a second optical waveguide, a first N-type doped contact region, and a second N-type doped contact region. The first optical waveguide and the second optical waveguide are arranged adjacently, the differential positive electrode is arranged on the side of the first optical waveguide away from the second optical waveguide, the differential negative electrode is arranged on the side of the second optical waveguide away from the first optical waveguide, the first N-type doped contact region is arranged between the differential positive electrode and the first optical waveguide, and the second N-type doped contact region is arranged between the differential negative electrode and the second optical waveguide. A first spacing is arranged between the first optical waveguide and the first N-type doped contact region, a second spacing is arranged between the second optical waveguide and the second N-type doped contact region, and a third spacing is arranged between the first optical waveguide and the second optical waveguide. The tracks of the first optical waveguide and the second optical waveguide, the first spacing, the second spacing, and the third spacing are adjusted according to the width of the first optical waveguide. The tracks of the side of the first N-type doped contact region close to the first optical waveguide and the side of the second N-type doped contact region close to the second optical waveguide are the same as the tracks of the first optical waveguide and the second optical waveguide. The first optical waveguide and the second optical waveguide are both arranged as multi-mode wide waveguides.

4. A differential high-bandwidth electro-optic modulator, characterized by, The differential high-bandwidth electro-optical modulator comprises a differential positive electrode, a differential negative electrode, a first optical waveguide, a second optical waveguide, a first N-type doped contact region, and a second N-type doped contact region. The first optical waveguide and the second optical waveguide are arranged adjacently, the differential positive electrode is arranged on the side of the first optical waveguide away from the second optical waveguide, the differential negative electrode is arranged on the side of the second optical waveguide away from the first optical waveguide, the first N-type doped contact region is arranged between the differential positive electrode and the first optical waveguide, and the second N-type doped contact region is arranged between the differential negative electrode and the second optical waveguide. A first spacing is arranged between the first optical waveguide and the first N-type doped contact region, a second spacing is arranged between the second optical waveguide and the second N-type doped contact region, and a third spacing is arranged between the first optical waveguide and the second optical waveguide. The tracks of the first optical waveguide and the second optical waveguide, the first spacing, the second spacing, and the third spacing are adjusted according to the width of the first optical waveguide. The first N-type doped contact region is close to one side of the first optical waveguide, and the second N-type doped contact region is close to one side of the second optical waveguide, and the trajectories of the first N-type doped contact region and the second N-type doped contact region are the same as the trajectories of the first optical waveguide and the second optical waveguide. The first optical waveguide and the second optical waveguide are provided with a subwavelength grating waveguide region therebetween.

5. The differential high-bandwidth electro-optic modulator of any one of claims 1 to 4, wherein, The differential positive electrode and the differential negative electrode each comprise an electrode metal and a radio frequency transmission line. The electrode metal is connected with the radio frequency transmission line. The radio frequency transmission line is electrically connected with the electrode metal. The first N-type doped contact region and the second N-type doped contact region are arranged on the other side of the radio frequency transmission line and the electrode metal.

6. The differential high-bandwidth electro-optic modulator of claim 5, wherein, The radio frequency transmission line is in a straight line type or a curved type with the same trajectory as the first optical waveguide and the second optical waveguide.

7. The differential high-bandwidth electro-optic modulator of claim 6, wherein, The differential high-bandwidth electro-optical modulator comprises, from bottom to top, a substrate layer, an oxide cladding layer, and a silicon waveguide layer. The top of the substrate layer is in contact with the bottom of the oxide cladding layer, and the silicon waveguide layer is embedded in the oxide cladding layer. The positions of the first N-type doped contact region, the second N-type doped contact region, the first optical waveguide, and the second optical waveguide are arranged in the silicon waveguide layer by ion doping.

8. The differential high-bandwidth electro-optic modulator of any one of claims 1 to 4, wherein, The differential high-bandwidth electro-optical modulator further comprises an input waveguide, a beam splitter, a first heating electrode, a second heating electrode, a beam combiner, and an output waveguide. The input end of the beam splitter is connected with the input waveguide, the first output end of the beam splitter is connected with the first optical waveguide, the second output end of the beam splitter is connected with the second optical waveguide, the other end of the first optical waveguide is connected with the first input end of the beam combiner through the first heating electrode, the other end of the second optical waveguide is connected with the second input end of the beam combiner through the second heating electrode, and the output end of the beam combiner is connected with the output waveguide.

9. An optical communication architecture, characterized by, The optical communication architecture comprises the differential high-bandwidth electro-optical modulator according to any one of claims 1 to 8.

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