A thermal management method and system based on planar etienne-hausson effect

Abstract

The application discloses a heat management method and system based on a planar Ettinghausen effect, which comprises the following steps: saturating magnetization of a magnetic material by applying an in-plane magnetic field, and applying an in-plane current to the magnetic material; the in-plane current is coplanar with the in-plane magnetic field, so that an in-plane heat flow is formed in the magnetic material, wherein the in-plane heat flow is coplanar with the in-plane current and perpendicular to each other, thereby generating a temperature control effect of heating and cooling at both ends of the in-plane heat flow respectively. The application applies the in-plane current and the in-plane magnetic field to the magnetic sample, and due to the existence of the planar Ettinghausen effect, when the in-plane current and the in-plane magnetic field are not coplanar and have a certain angle, heating and cooling phenomena are generated at both ends perpendicular to the in-plane current direction respectively, thereby realizing a new type of heat management. The application is a newly detected effect, and is more suitable for heat management.

Description

Technical Field

[0001] This invention relates to the field of thermal management, specifically a thermal management method and thermal management system based on the planar Ettinghausen effect. Background Technology

[0002] Thermal management technology has wide and crucial applications in modern industry and electronics. In the field of electronic devices, as chip integration increases and performance continues to improve, heat density rises significantly. Thermal management technology achieves efficient heat dissipation through active temperature control and other methods, ensuring stable operation of chips in high-temperature environments. In the field of new energy vehicles, battery operating temperature has a significant impact on its performance, lifespan, and safety. Thermal management technology can effectively regulate battery temperature, ensuring that the battery operates within a suitable temperature range, thereby improving the overall performance and safety of new energy vehicles.

[0003] However, the development of traditional thermoelectric effects faces limitations due to material performance bottlenecks and physical mechanism defects. Influenced by the Wiedemann-Franz law, the thermoelectric figure of merit (ZT value) is difficult to surpass, such as in commercial applications. The base material has a room temperature ZT value of approximately 1.0 and a conversion efficiency of less than 5%. Furthermore, these materials rely on scarce elements such as tellurium and antimony. Additionally, their thermoelectric coupling control mechanism suffers from a single dimension of heat flux control, making dynamic asymmetric control impossible.

[0004] The development of spin thermal electronics has opened up new avenues for thermal management technology. It allows for the directional control of heat flux vectors through magnetization, overcoming the spatial symmetry limitations of traditional effects and thus further optimizing thermal management performance. However, current spin thermal effects, such as the anomalous Ettinghausen effect, require the generated heat flux to be orthogonal to the applied magnetic field and current, a symmetry that hinders practical applications. Therefore, an effect with different symmetries is needed to further improve thermal management. Summary of the Invention

[0005] To address the shortcomings of the prior art, this invention provides a thermal management method and system based on the planar Ettinghausen effect. This invention applies an in-plane current and an in-plane magnetic field to a magnetic sample. Due to the existence of the planar Ettinghausen effect, when the in-plane current and the in-plane magnetic field are not in the same direction and have a certain angle, heating and cooling phenomena will be generated at the two ends perpendicular to the direction of the in-plane current, thereby achieving a novel thermal management.

[0006] To achieve the above technical objectives, the present invention adopts the following technical solution: a thermal management method based on the planar Ettinghausen effect, comprising the following steps:

[0007] A magnetic material is saturated by applying an in-plane magnetic field, and an in-plane current is applied to the magnetic material.

[0008] The in-plane current is coplanar with the in-plane magnetic field, so that an in-plane heat flow is formed in the magnetic material, wherein the in-plane heat flow is coplanar and perpendicular to the in-plane current, thereby generating a temperature control effect of heating and cooling at both ends of the in-plane heat flow, respectively.

[0009] The angle between the in-plane current and the in-plane magnetic field is denoted as an in-plane angle, when the in-plane angle is an integer multiple of 0° or 90°, the in-plane heat flow is 0, at this time, the temperature control is not controlled.

[0010] The temperature corresponding to the in-plane heat flow is denoted as , the in-plane magnetic field is denoted as H, and the magnetic moment corresponding to the saturation field of the magnetic material is denoted as M, when the in-plane magnetic field H is greater than the saturation field of the magnetic material, the direction of the in-plane magnetic field H is the same as the direction of the magnetic moment M, that is , the in-plane heat flow is denoted as , and the in-plane angle is denoted as

[0011] The plane Ettinghausen effect is represented by formula one:

[0012] (Formula one)

[0013] , wherein is the temperature difference caused by the plane Ettinghausen effect, is the plane Ettinghausen effect coefficient, and j c represents the in-plane current density.

[0014] Further comprising: obtaining temperature information of the magnetic material based on the phase-locked infrared technology, extracting the amplitude and phase of the temperature information: the amplitude is denoted as A, and the phase is denoted as , since the phase of the temperature difference signal caused by the calculation of the plane Ettinghausen effect measured by the phase-locked infrared technology is 0° or 180°, the amplitude and phase of the temperature information are simplified as amplitude X=Acos , and the X component of the signal generated by the plane Ettinghausen effect is denoted as ;

[0015] According to formula two, the of each in-plane angle is calculated

[0016] (Formula two)

[0017] , wherein is the X component corresponding to the angle, is the X component corresponding to the angle, is the X component corresponding to the angle.

[0018] When and The heating and refrigeration effects are opposite.

[0019] The magnetic material is a single magnetic material or a composite magnetic material with anisotropic magnetoresistance.

[0020] The in-plane magnetic field is 2500 Oe.

[0021] A heat management system adopts a heat management method based on a planar Ettingshausen effect.

[0022] In summary, the present application achieves the following technical effects:

[0023] When an in-plane magnetic field and a longitudinal in-plane current are applied to a magnetic material, a heat flow is generated in the in-plane transverse direction, which causes heating and refrigeration effects at the two ends of the transverse direction. The magnetic field, the current and the heat flow are coplanar, which has a different symmetry from other spin heat effects, and can be used as a new heat management technology;

[0024] The planar Ettingshausen effect of the present application is a newly discovered effect, which is more suitable for heat management. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 is a planar Ettingshausen effect schematic diagram of a nickel body material;

[0026] Figure 2 is a planar Ettingshausen effect measured diagram of a nickel body material at five different angles when the in-plane current is 1A;

[0027] Figure 3 is the relationship between the planar Ettingshausen effect amplitude of the nickel body material and different angles when the in-plane current is 1A;

[0028] Figure 4 is a planar Ettingshausen effect measured diagram of a nickel body material at five different angles when the in-plane current is 0.8A;

[0029] Figure 5 is the relationship between the planar Ettingshausen effect amplitude of the nickel body material and different angles when the in-plane current is 0.8A;

[0030] Figure 6 is a planar Ettingshausen effect measured diagram of a nickel body material at five different angles when the in-plane current is 0.5A;

[0031] Figure 7 is the relationship between the planar Ettingshausen effect amplitude of the nickel body material and different angles when the in-plane current is 0.5A;

[0032] Figure 8is the actual temperature map of the upper surface of Ni at 1A current;

[0033] Figure 9 is the PEE effect measurement map of Ni at 135°;

[0034] Figure 10 is the PEE effect measurement map of Ni at 135°;

[0035] Figure 11 is the line graph plotted along the data of the dashed line in Figure 10

[0036] Figure 12 is the schematic diagram of the out-of-plane rotating magnetic field of the anomalous Ettingshausen effect;

[0037] Figure 13 is the schematic diagram of the out-of-plane rotating magnetic field of the planar Ettingshausen effect. DETAILED DESCRIPTION

[0038] The application will be further described in detail below with reference to the accompanying drawings.

[0039] The specific embodiments are only an explanation of the application, and are not a limitation of the application, and those skilled in the art can make modifications to the embodiments without creative contribution, as long as the modifications are within the scope of the claims of the application. EMBODIMENT

[0040] A thermal management method based on the planar Ettingshausen effect (PEE), wherein the PEE is a newly measured effect, and experiments show that the PEE is suitable for thermal management.

[0041] The method comprises the following steps:

[0042] Saturating magnetization is performed on a magnetic material by applying an in-plane magnetic field, and an in-plane current is applied to the magnetic material;

[0043] The in-plane current is coplanar with the in-plane magnetic field, so that an in-plane heat flow is formed in the magnetic material, wherein the in-plane heat flow is coplanar with the in-plane current and perpendicular to the in-plane current, thereby generating a temperature control effect of heating and cooling at both ends of the in-plane heat flow, respectively;

[0044] An in-plane angle between the in-plane current and the in-plane magnetic field is denoted as an in-plane angle, when the in-plane angle is an integer multiple of 0° or 90°, the in-plane heat flow is 0, and at this time, the temperature is not controlled.

[0045] ​The application does not need to consider time and sequence, and heat flow is immediately generated as soon as the magnetic field and the current are applied, so that the variables are reduced, the variables are in-plane magnetic field and in-plane current, and the heat management is more convenient to control and realize compared with the prior art.

[0046] The temperature control effect of heating and refrigeration generated at the two ends of the in-plane heat flow refers to that the in-plane heat flow has a first end and a second end opposite to the first end, and the heating effect is generated at the first end of the in-plane heat flow while the refrigeration effect is generated at the second end, or the refrigeration effect is generated at the first end of the in-plane heat flow while the heating effect is generated at the second end. The absolute value of the temperature of the first end refrigeration / heating is the same as the absolute value of the temperature of the second end refrigeration / heating. Due to the symmetry of PEE, when the angle changes by 90 degrees, the direction of the generated heat flow is reversed, and the size of the generated heat flow is unchanged (the direction is changed) under the condition that other parameters (density, thermal conductivity, applied current) of the sample are unchanged. The temperature difference caused by the size of the heat flow is also unchanged.

[0047] Further, the in-plane current and the in-plane magnetic field form an in-plane included angle, wherein the in-plane current and the in-plane included angle are used to change the size of the in-plane heat flow.

[0048] The application applies an in-plane magnetic field and a longitudinal in-plane current to a magnetic material, and when the two have a certain included angle, a heat flow is generated in the in-plane transverse direction. When the in-plane current is constant, the size of the heat flow changes when the in-plane included angle is regulated, and the size of the heat flow can be dynamically adjusted based on this, so that the heating and refrigeration effects at the two ends of the transverse direction are adjusted to realize a new heat management scheme. In the case where the in-plane included angle is constant, the size of the in-plane current is regulated, and the size of the heat flow is also dynamically adjusted. Therefore, the application can realize different temperature control effects by changing the current and the included angle.

[0049] The temperature corresponding to the in-plane heat flow is recorded as The in-plane magnetic field is recorded as H, and the magnetic moment corresponding to the saturation field of the magnetic material is recorded as M. When the in-plane magnetic field H is greater than the saturation field of the magnetic material, the direction of the in-plane magnetic field H is the same as the direction of the magnetic moment M, that is The in-plane included angle is recorded as

[0050] The formula one is used to represent the planar Ettinghausen effect:

[0051] (Formula one)

[0052] Wherein, is the temperature difference caused by the planar Ettinghausen effect, is the planar Ettinghausen effect coefficient, and j c represents the in-plane current density.​​

[0053] In the embodiment, S represents the cross-sectional area of the sample, represents the in-plane current. It can be seen from formula one that the symmetry of the planar Ettingshausen effect is that the in-plane angle is

[0054] The planar Ettingshausen effect coefficient is related to the material, and different materials have different planar Ettingshausen effect coefficients, which are obtained by experimental measurement. That is, according to formula one, the temperature difference measured at 45° is twice the current density, and the planar Ettingshausen effect coefficient is obtained.

[0055] Figure 1 is a schematic diagram of the planar Ettingshausen effect, in which, PEE q is the in-plane heat flow, which is coplanar and perpendicular to the in-plane current , and there is an in-plane angle between the in-plane current and the magnetic moment M.

[0056] In the embodiment, the applied in-plane magnetic field H is greater than the saturation field of the sample itself, so the magnetic field direction of the in-plane magnetic field H is the direction of the magnetic moment M, that is, , is the in-plane angle between the magnetic moment M and the in-plane current Jc, and the present application uses as the in-plane angle.

[0057] In the embodiment, the in-plane angle ranges from 0° to 360°, and any angle other than the end value 0°, the end value 360°, and the intermediate values 90°, 180°, and 270° can generate heat flow on the magnetic material to better achieve thermal management.

[0058] Further, the method further comprises: obtaining temperature information of the magnetic material based on the phase-locked infrared technology, extracting the amplitude and phase of the temperature information; the amplitude is denoted as A, and the phase is denoted as Since the phase of the planar Ettingshausen effect (PEE) signal measured by the phase-locked infrared technology is 0° or 180°, the amplitude and phase of the temperature information are simplified as X=Acos , and the X component of the signal generated by the planar Ettingshausen effect is denoted as ;

[0059] According to formula two, the of each in-plane angle is calculated as follows:

[0060] (Formula two) ​​​

[0061] wherein, refers to the X component corresponding to the angle, refers to the X component corresponding to the angle, refers to the X component corresponding to the angle.

[0062] i.e. the temperature corresponding to the in-plane heat flow X component, represents the heat flow size and the hot and cold degree.

[0063] Further, the amplitude and phase of the temperature information are extracted, which further comprises:

[0064] The X component of the temperature information is represented by X = A cos , wherein A is the amplitude, and is the phase. Since the phase of the PEE signal measured by the lock-in infrared technology is 0° or 180°, in order to more simply describe the signal, X is used to replace A and two values.

[0065] For example, when the in-plane current is 1 A:

[0066] , no heat flow is generated, X = 0, at this time, no temperature control.

[0067] , X = 8 mK, at this time, the maximum heat flow is generated in the transverse direction, and temperature control can be achieved.

[0068] , no heat flow is generated, X = 0, at this time, no temperature control.

[0069] , X = -8 mK, at this time, the maximum reverse heat flow is generated in the transverse direction, and temperature control can be achieved.

[0070] , no heat flow is generated, X = 0, at this time, no temperature control.

[0071] The temperature amplitude change of the heat flow is shown in Figure 3 , when the in-plane included angle is 0°-90°, at this time, the heat flow is in the forward direction, when the in-plane included angle is 90°-180°, at this time, the heat flow is in the reverse direction, that is, the change trend of the sin function. It can also be understood that, when the in-plane included angle is 0°-90°, the left end of the in-plane heat flow is the heating effect, when the in-plane included angle is 90°-180°, the left end of the in-plane heat flow is the refrigeration effect, and the right end of the in-plane heat flow is the opposite, which is more convenient to realize the heat management.

[0072] Since the The symmetry is that when the in-plane angle changes 90°, the direction of the heat flow is reversed. The heating and cooling of the present application has two regions instead of being only on the left and right sides. Figure 8 is the actual temperature map of the upper surface of Ni at 1A current, Figure 9 is the PEE effect measurement map of Ni at 135°, Figure 8 and Figure 9 The dashed box is the upper surface of the sample. The temperature generated on the left and right sides is not completely localized on the left and right sides of the sample, but forms two temperature regions, because the temperature that should only be generated on the two sides has diffused to the middle of the sample due to heat diffusion, thus forming two temperature regions. Figure 10 is the PEE effect measurement map of Ni at 135°, Figure 11 is the line graph drawn along the data of the dashed line in Figure 10 The present application has a maximum value and a minimum value on the two side edges. Since the sample is a metal material, the thermal conductivity is high, so the maximum temperature generated on the two side edges diffuses to the middle and outside of the sample, thus forming two temperature regions. Therefore, in the transverse heat flow direction, the part to the left of the middle is recorded as the left side, and the part to the right of the middle is recorded as the right side. When the in-plane angle is 0-90°, the left side of the sample is heating and the right side is cooling. When the in-plane angle is 90-180°, the left side becomes cooling and the right side becomes heating. However, the maximum and minimum values are still generated on the left and right sides of the sample.

[0073] Figure 3 The signal change graph drawn with the angle is only the signal size of the left side (left end) changing with the magnetic field current angle, which is similar to If the signal size of the right side (right end) is drawn with the magnetic field current angle, since the size of the heat flow does not change, the corresponding change graph of the right side is similar to , which does not affect the maximum and minimum values.

[0074] Therefore, the present application can control the size and direction of the heat flow within a rotation angle of 180° of the magnetic field, and also proves that heat management can be achieved.

[0075] As shown in Figure 3 , when and , the heating and cooling effects are opposite, the generated heat flow is the largest, and the temperature amplitude is the largest, which is the hottest and coldest effect.

[0076] Figure 2is the measured planar Ettinghausen effect diagram of the nickel body material at five different angles, the planar Ettinghausen effect of the Ni material at different angles is measured in this embodiment, the measurement is based on the phase-locked infrared technology, in order to more intuitively see the heating and refrigeration effect, the amplitude and phase diagram measured by the phase-locked infrared are processed, and the X component of the temperature information is obtained by using the sine wave curve shown in the formula (1) and the cosine wave curve shown in the formula (2) .

[0077] Due to the existence of the background signal, the data at each angle is obtained by subtracting the background signal. It can be seen that at 45° and 135°, the heating and refrigeration effects are opposite, which accords with the symmetry of the formula (1).

[0078] The background signal refers to: the Joule heat generated by the applied current will cause a nonlinear temperature rise process of the sample (the temperature does not increase linearly with time), so that a part of the Joule heat is included in the signal measured by the phase-locked infrared, and therefore the signal at the time when the background signal is subtracted, because at this angle, the PEE signal is 0.

[0079] Further, the planar Ettinghausen effect signal of the magnetic material in the range of 360° is measured at intervals of 15°, and a curve with the in-plane included angle as the horizontal coordinate and the X component as the vertical coordinate is drawn, which is a sine wave curve as shown in the formula (1). Figure 3

[0080] Figure 3 is the relationship between the planar Ettinghausen effect amplitude of the nickel body material and different angles, that is, the curve of the included angle-X component is drawn, and it can be seen that it is a sine wave curve, which proves that the planar Ettinghausen effect has symmetry, and the novel heat management technology is realized based on the novel symmetry of the planar Ettinghausen effect.

[0081] The phase-locked infrared technology is adopted to measure the heat flow, and the precision of the heat measurement is improved by extracting the thermal signal with the same frequency as the current.

[0082] The magnetic material is a single magnetic material or a composite magnetic material with anisotropic magnetoresistance.

[0083] The in-plane magnetic field is 2500 Oe, which is greater than the saturation field of the sample (nickel body material), so that is equal to When the in-plane magnetic field is further increased is still equal to At this time, only the in-plane current or needs to be changed, so that the X component of the temperature information can be controlled, that is, the refrigeration and heating effects can be controlled.

[0084] Figures 1-3 is the data measured by using 1A for the in-plane current. Embodiment​​​

[0085] As shown in Figure 1 , taking Ni material as an example, the Ni material sample is a rectangular polycrystal material with a size of 10 mm*0.05 mm*0.8 mm, and the in-plane magnetic field is applied by an electromagnet with a rotating turntable, and the in-plane magnetic field direction can be determined by rotating the turntable. The initial in-plane magnetic field direction coincides with the 0° and 180° scales of the turntable.

[0086] The direction of the in-plane current is called longitudinal, and the transverse perpendicular to it will generate in-plane heat flow. In the sample, the in-plane current is applied in the length direction, and then the heat flow is generated in the width direction. The heat flow is uniformly generated in the entire sample (the direction is in the transverse direction), and then the temperature accumulation is generated on both sides of the transverse direction. The planar Ettinghausen effect is a kind of thermoelectric effect, that is, the in-plane current will generate in-plane heat flow. The generated in-plane heat flow (in the generated direction) is uniformly generated in all regions inside the sample, so it can also be understood as heat flow density (it can be understood as current density, but one is heat flow and the other is current). According to Fourier's law, , the heat flow density is proportional to the temperature gradient. And this temperature gradient can generate a temperature difference. For heat flow density and temperature difference, it can be analogous to current. For current, the current is applied to the sample, and then uniform current is generated in all regions along the applied direction in the sample, so there is a potential difference at both ends. For the heat flow of the present application, the heat flow generated by the thermoelectric effect is also uniformly generated in the sample, and according to Fourier's law, the heat flow will also cause a temperature difference.

[0087] This effect is proportional to the current, that is, the greater the current, the greater the transverse heat flow generated, and the greater the temperature accumulation difference generated on both sides.

[0088] When the in-plane magnetic field is still 2500 Oe, the in-plane current is changed, and X is changed accordingly:

[0089] Figure 2 is the measured planar Ettinghausen effect diagram of the nickel body material at five different angles when the in-plane current is 1A;

[0090] Figure 3 is the relationship between the amplitude of the planar Ettinghausen effect of the nickel body material and different angles when the in-plane current is 1A;

[0091] Figure 4 is the measured planar Ettinghausen effect diagram of the nickel body material at five different angles when the in-plane current is 0.8A;

[0092] Figure 5 is the relationship between the amplitude of the planar Ettinghausen effect of the nickel body material and different angles when the in-plane current is 0.8A;

[0093] Figure 6 is the measured planar Ettingshausen effect diagram of the nickel body material at five different angles when the in-plane current is 0.5A;

[0094] Figure 7 is the relationship between the planar Ettingshausen effect amplitude of the nickel body material and different angles when the in-plane current is 0.5A;

[0095] It can be seen from Figure 2 , Figure 3 that when the in-plane current is 1A, the average maximum value of X is 8mK, the generated transverse heat flow is larger, and the temperature accumulation difference generated on both sides is larger;

[0096] It can be seen from Figure 4 , Figure 5 that when the in-plane current is 0.8A, the average maximum value of X is 6.5mK, the generated transverse heat flow is slightly smaller, and the temperature accumulation difference generated on both sides is slightly smaller;

[0097] It can be seen from Figure 6 , Figure 7 that when the in-plane current is 0.5A, the average maximum value of X is 3.9mK, the generated transverse heat flow is smaller, and the temperature accumulation difference generated on both sides is smaller.

[0098] From the above data, when the in-plane current increases, the transverse heat flow is larger, and the temperature difference on both sides is larger, which also shows that the technology is beneficial for heat management.

[0099] A heat management system adopts a heat management method based on a planar Ettingshausen effect.

[0100] The symmetry possessed by the traditional effect is that the magnetic moment, the current and the heat flow need to satisfy the orthogonal relationship, and two of the three are perpendicular. The present application has different symmetry, that is, the magnetic moment, the current and the heat flow do not need to satisfy the orthogonal relationship, and the three can be coplanar, that is, the in-plane current and the in-plane magnetic moment can excite the in-plane heat flow.

[0101] The novel heat management technology based on the planar Ettingshausen effect of the present application breaks through the spatial symmetry limitation of the traditional thermoelectric effect, and can realize dynamic adjustment of heat flow. The magnetic field, the current and the heat flow are coplanar, and this symmetry is easier to realize in actual operation, especially the magnetic field is more convenient to apply in the plane.

[0102] The advantage of the planar Ettingshausen effect of the present application lies in precise regulation (the direction and size of heat flow can be adjusted by current or magnetic field) and miniaturization adaptation (suitable for micro-scale space), so it can be used for heat management of chips, such as micro-chips or integrated circuits.

[0103] The previous anomalous Ettingshausen effect is that the magnetic field, the current and the generated heat flow must be orthogonal, Figure 12is the schematic diagram of the out-of-plane rotating magnetic field of the abnormal Etinghausen effect, β is the out-of-plane angle to be rotated, and the magnetic field to be applied must be out-of-plane. However, it is quite difficult to achieve the out-of-plane rotating field, and a vertical rotating table or a vector magnet is required. Due to the large out-of-plane saturation field, a large magnetic field is required, and it is more difficult to achieve the magnetic field by using a permanent magnet or a vector magnet. In addition, the volume of the permanent magnet or the vector magnet is large in this case, which is not conducive to integration.

[0104] The magnetic field applied in the present application is in the plane, Figure 13 is the schematic diagram of the out-of-plane rotating magnetic field of the abnormal Etinghausen effect, β is the out-of-plane angle to be rotated, and the magnetic field to be applied must be out-of-plane. However, it is quite difficult to achieve the out-of-plane rotating field, and a vertical rotating table or a vector magnet is required. Due to the large out-of-plane saturation field, a large magnetic field is required, and it is more difficult to achieve the magnetic field by using a permanent magnet or a vector magnet. In addition, the volume of the permanent magnet or the vector magnet is large in this case, which is not conducive to integration.

[0105] In order to achieve the dynamic adjustment of the transverse heat flow by the abnormal Etinghausen effect, the magnetic field needs to be rotated by 360° to achieve the change of the signal from 0 to the maximum value to 0 to the minimum value to 0. In order to achieve the heat flow of a certain value, 360° needs to be changed. This is not easy to rotate and adjust for the out-of-plane field. In order to achieve the dynamic adjustment of the transverse heat flow by the present application, the magnetic field only needs to be rotated by 180° to achieve the change of the signal from 0 to the maximum value to 0 to the minimum value to 0. In order to achieve the heat flow of a certain value, only 180° needs to be changed. This is very easy to rotate and adjust for the in-plane field, and it is easier to achieve precise adjustment. Therefore, the present application is more convenient for achieving the dynamic adjustment of the transverse heat flow compared with the abnormal Etinghausen effect.

[0106] In the measured PEE signal, the PEE coefficient and the AEE coefficient are obtained, as shown in Table 1.

[0107] Table 1: Measured PEE coefficient and AEE coefficient

[0108] Ni The bulk PEE coefficient (KmA -1 )]]> 25 x 10 -7 ]]> The bulk AEE coefficient (KmA -1 )]]> 6 x 10 -7 ]]>

[0109] The bulk PEE coefficient represents the PEE coefficient, and the bulk AEE coefficient represents the AEE coefficient. It can be seen that the PEE coefficient is greater than the AEE coefficient, which indicates that the PEE is greater than the AEE. This further indicates that the heat management based on the PEE of the present application is a better and newer technology.

[0110] It should be noted that the above examples are only used to illustrate the technical solutions of the present application but not limit the present application. Although the present application is described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or equivalently replaced, without departing from the spirit and scope of the technical solutions of the present application, which should be covered in the scope of the claims of the present application.

Claims

1. A thermal management method based on planar Etienne-Hausson effect, characterized in that, Comprising the following steps: Saturating magnetization by applying an in-plane magnetic field to the magnetic material, and applying an in-plane current to the magnetic material; The in-plane current is coplanar with the in-plane magnetic field, so as to form an in-plane heat flow in the magnetic material, wherein the in-plane heat flow is coplanar and perpendicular to the in-plane current, thereby generating temperature control effect of heating and cooling at both ends of the in-plane heat flow respectively; The angle between the in-plane current and the in-plane magnetic field is denoted as an in-plane angle, when the in-plane angle is an integer multiple of 0° or 90°, the in-plane heat flow is 0, at this time, temperature control is not performed.

2. A thermal management method based on planar Eitinghausen effect according to claim 1, characterized in that, Let the temperature corresponding to the in-plane heat flow be denoted as T Let the in-plane magnetic field be denoted as H, and let the magnetic moment corresponding to the saturation field of the magnetic material be denoted as M. When the in-plane magnetic field H is greater than the saturation field of the magnetic material, the direction of the in-plane magnetic field H is the same as the direction of the magnetic moment M, that is Let be the in-plane angle. The plane Ettinghausen effect is expressed by formula one: (Equation One) wherein is the temperature difference due to the planar Ettingshausen effect, is the planar Ettingshausen effect coefficient, with j c denotes the in-plane current density.

3. A thermal management method based on planar Eitinghausen effect according to claim 2, characterized in that, Further comprising: The temperature information of the magnetic material is obtained based on the phase-locked infrared technology, and the amplitude and phase of the temperature information are extracted: the amplitude is denoted as A, and the phase is denoted as Since the phase of the planar Ettingshausen effect signal measured by the phase-locked infrared technology is 0° or 180°, the amplitude and phase of the temperature information are represented by amplitude X=Acos ; and the phase is represented by ; and the X component of the signal generated by the planar Ettingshausen effect is represented by The in-plane angle of each face is calculated according to Equation Two : (Equation Two) wherein refers to the X component corresponding to an angle of refers to the X component corresponding to an angle of refers to the X component corresponding to an angle of refers to the X component corresponding to an angle of refers to the X component corresponding to an angle of refers to the X component corresponding to an angle of 4. A thermal management method based on planar Eitinghausen effect according to claim 3, characterized in that, In and When, heating and cooling effects are opposite.

5. A thermal management method based on planar Ettingshausen effect according to claim 1, characterized in that, Under the condition of keeping the in-plane current constant, the size of the in-plane heat flow is changed by regulating the in-plane angle; under the condition of keeping the in-plane angle constant, the size of the in-plane heat flow is changed by regulating the in-plane current.

6. A thermal management method based on planar Eitinghausen effect according to claim 1, characterized in that, The magnetic material is a single magnetic material or a composite magnetic material with anisotropic magnetoresistance.

7. The thermal management method based on planar Etienne-Hausson effect according to claim 1, characterized in that, The in-plane magnetic field is 2500 Oe.

8. A thermal management system characterized by, Adopting a heat management method based on the plane Ettinghausen effect according to any one of claims 1-7.

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