Silicon-rich anti-reflection resin as well as preparation method and coating thereof

Abstract

The structural formula of the silicon-rich anti-reflection resin is shown in the formula (1), and x, y and z are respectively 0 or 1. The invention also discloses a preparation method of the silicon-rich anti-reflection resin, which comprises the following steps: (1) dissolving a modified phthalonitrile monomer, a catalyst I and a carbon-carbon double bond monomer containing a cross-linking group in a solvent, and reacting to obtain a mixed solution A; (2) dissolving the mixed solution A, a siloxane monomer containing a light absorption group and a catalyst II in a solvent, and reacting to obtain a mixed solution B; and (3) carrying out reduced pressure distillation on the mixed solution B to remove the residual solvent to obtain the silicon-rich anti-reflection resin. The silicon-rich anti-reflection resin is spin-coated on a semiconductor substrate and is cured and baked at high temperature to obtain a silicon-rich anti-reflection coating, and the requirements on the etching rate and the anti-reflection function of the silicon-rich anti-reflection coating in different application scenes can be met. Formula (1)

Description

Technical Field

[0001] This invention belongs to the field of photolithography materials technology, specifically relating to a silicon-rich antireflective resin, its preparation method, and its coating. Background Technology

[0002] Photolithography is a crucial step in the fabrication of semiconductor integrated circuits. This process uses exposure and development to etch specific geometric patterns from a photomask onto a photoresist layer, which is then transferred to a substrate coated with the photoresist through etching. The most important performance indicators in photolithography are the feature size and resolution of the pattern.

[0003] The continuous miniaturization of electronic products demands increasingly smaller feature sizes for photolithographic patterns, while simultaneously requiring higher pattern resolution. Generally, the shorter the wavelength of the light source used for exposure, the higher the processing resolution of the pattern. However, as light sources continue to advance towards higher energy and shorter wavelengths, the negative impacts of related technologies on photolithography processes are becoming increasingly apparent, particularly the standing wave effect. As the exposure wavelength decreases, the wafer surface experiences interference between reflected and incident light, resulting in ripples within the photoresist and on the pattern sidewalls, severely affecting pattern clarity and resolution. In ultra-fine patterning processes at technology nodes below 45nm, excessively thin photoresist cannot effectively block plasma etching, causing the photoresist to be consumed before the pattern is fully etched onto the wafer, leading to failed pattern transfer.

[0004] Therefore, to mitigate the standing wave effect and improve etching resistance, multilayer lithography technology has emerged. Multilayer lithography employs alternating organic and inorganic layers, achieving photoresist pattern transfer through the selective etching of plasma between different layers. Multilayer lithography can be implemented through chemical vapor deposition, spin coating, or a combination of both. Due to its simplicity and ease of implementation, spin coating is commonly used as one of the primary methods in lithography. Among these, a silicon-rich antireflective coating is a crucial component of the spin-coated three-layer structure in multilayer lithography. The photoresist, silicon-rich antireflective coating, and spin-coated carbon layer exhibit significant differences in their resistance to different plasma velocities, thus enhancing the overall etching resistance of the three-layer structure. Simultaneously, the silicon-rich antireflective coating and spin-coated carbon layer act as antireflectors against ultraviolet light during the lithography process, effectively reducing the standing wave effect, wobbling effect, and notch effect. The molecular structure design of silicon-rich antireflective coatings must consider the influence of multiple factors: First, silicon content mainly affects the etching rate. As the silicon content increases, the etching rate of fluorine plasma increases to protect the Si layer, while the etching rate of oxygen plasma decreases to protect the C layer, reducing photoresist consumption. Therefore, the higher the silicon content, the greater the improvement in overall etching resistance. Second, the refractive index n and absorption coefficient k should be matched with the application scenarios such as photolithography to achieve good phase shift, form subtractive interference, eliminate reflected light from the substrate, and play an antireflective role. Finally, the surface characteristics of the silicon-rich antireflective coating should be matched with the photoresist to ensure good adhesion between the silicon-rich antireflective coating and the photoresist, and avoid the collapse of the photoresist during development.

[0005] Currently, most research and patents in the field of silicon-rich antireflective coatings revolve around the sol-gel method. However, siloxane polymers prepared using the sol-gel method have poor stability and are prone to self-polymerization during storage. This process cannot be prevented; the only methods to reduce the rate of self-polymerization are lowering the storage temperature and adding stabilizers. The ultra-large polysiloxane molecules formed by the self-polymerization reaction can form gel particles. The increased particle content reduces the film quality, thereby affecting the yield of photolithography processes in chip manufacturing and severely impacting chip manufacturing costs and efficiency.

[0006] Patent document CN118995044A discloses a silicon-rich antireflective coating resin and its preparation method, as well as a silicon-rich antireflective coating. The preparation method is as follows: (1) dissolve polymethylhydrosiloxane in solvent one to obtain mixture A; (2) dissolve carbon-carbon double bond monomers containing epoxy crosslinking groups, carbon-carbon double bond monomers containing light-absorbing groups, and catalysts in solvent two to obtain mixture B; (3) add mixture B dropwise to mixture A and react to obtain the silicon-rich antireflective coating resin. In contrast, this application uses hydrosilylation to improve storage stability, but the synthesized silicon-rich antireflective coating is a chain-like polysiloxane, which has certain defects in molecular structure design, and its solvent resistance needs to be further improved.

[0007] Therefore, it is of great significance to find a method for preparing a silicon-rich antireflective coating with high stability and high solvent resistance, and to apply it to photolithography. Summary of the Invention

[0008] To address the shortcomings of existing technologies, the first aspect of this invention provides a silicon-rich antireflective resin that combines high silicon content, light-absorbing groups, and crosslinking groups.

[0009] A silicon-rich antireflective resin, with the structural formula shown in formula (1): Equation (1) Where x, y, and z are 0 or 1 respectively.

[0010] Preferably, the silicon-rich antireflective resin has a silicon content of 25%-35% by mass percentage. A silicon content greater than 25% can increase the etching rate of fluorine plasma and shorten the exposure time of the photoresist in fluorine plasma, thereby protecting the photoresist layer. Simultaneously, it slows down the etching rate of oxygen plasma, forming a highly resistant SiO2 layer in oxygen plasma to protect the carbon layer, thus improving the overall etching capability. Furthermore, a high silicon content can improve optical performance by increasing the Si-O-Si network density to regulate the n-value and by synergistically regulating the k-value with light-absorbing groups.

[0011] Further preferably, the silicon-rich antireflective resin has a carbon content of 40%-50% and a hydrogen content of 2%-10% by mass percentage.

[0012] Preferably, the weight-average molecular weight of the silicon-rich antireflective resin is 10,000-70,000. Within this weight-average molecular weight range, not only can the insufficient cohesive strength and mechanical strength caused by excessively low molecular weight lead to a decrease in solvent resistance and film quality, but also the increased viscosity caused by excessively high molecular weight leads to a decrease in stability. Within this range, the silicon-rich antireflective resin can be ensured to have good film-forming properties and stability.

[0013] The second aspect of the present invention provides a method for preparing the aforementioned silicon-rich antireflective resin. This method enables the control of the structure of the resin molecules to achieve high silicon content and fine control of optical parameters, while also exhibiting good stability and solvent resistance.

[0014] The preparation method of silicon-rich antireflective resin includes: (1) The modified phthalonitrile monomer, catalyst one and carbon-carbon double bond monomer containing crosslinking groups are dissolved in a solvent and reacted to obtain a mixture A; (2) Dissolve mixture A, siloxane monomer containing light-absorbing groups and catalyst II in a solvent and react to obtain mixture B; (3) The residual solvent in the mixture B is removed by vacuum distillation to obtain the silicon-rich antireflective resin.

[0015] The method for preparing the aforementioned silicon-rich antireflective resin uses modified phthalonitrile monomers, carbon-carbon double bond monomers containing crosslinking groups, and siloxane monomers containing light-absorbing groups as reactants. During high-temperature curing, the modified phthalonitrile monomers polymerize between cyano groups to form phthalocyanine conjugated rings. This structure further improves the solvent resistance and stability of the silicon-rich antireflective coating. Furthermore, this preparation method employs a two-step process: first, phthalonitrile prepolymerization is carried out, followed by hydrosilylation polymerization, effectively avoiding the problem of poor system stability caused by monomer self-polymerization in traditional sol-gel methods.

[0016] The modified phthalonitrile monomers are o-nitrophthalonitrile, m-nitrophthalonitrile, p-nitrophthalonitrile, o-aminophthalonitrile, m-aminophthalonitrile, or p-aminophthalonitrile. By modifying the phthalonitrile monomers with nitro or amino groups, the optical parameters of the silicon-rich antireflective coating can be precisely controlled.

[0017] Preferably, the modified phthalonitrile monomer is m-nitrophthalonitrile or p-nitrophthalonitrile. Nitro-modified phthalonitrile monomers are more conducive to improving the optical properties of silicon-rich antireflective resins.

[0018] The carbon-carbon double bond monomer containing crosslinking groups is 2-allylphenol, propyl glycidyl ether, epoxybutene, 1,2-epoxy-5-cyclooctene, 3,4-epoxy-1-cyclohexene, 1,2-epoxy-5-hexene, 4-vinylepoxycyclohexane, 1,2-epoxy-9-decene, or 1,2-epoxy-4-vinylcyclohexane.

[0019] The light-absorbing siloxane monomers are 1,3,5,7-tetramethylcyclotetrasiloxane, tetramethyldisiloxane, polymethylhydrosiloxane, or pentamethyldisiloxane. Introducing siloxane monomers with high silicon content increases the silicon content of the silicon-rich antireflective resin.

[0020] Preferably, the siloxane monomer containing the light-absorbing group is 1,3,5,7-tetramethylcyclotetrasiloxane. The cyclic structure facilitates the provision of high-density silane-hydrogen bonds, increasing the silicon content of the silicon-rich antireflective resin, thereby enhancing its etching resistance.

[0021] The catalyst mentioned is a conventional alkaline catalyst, including but not limited to potassium carbonate, lithium hydroxide, sodium hydroxide, potassium hydroxide, cesium hydroxide, sodium methoxide, potassium methoxide, sodium ethoxide, potassium ethoxide, sodium isopropoxide, potassium isopropoxide, sodium tert-butoxide, potassium tert-butoxide, tetramethylammonium hydroxide, ethyltrimethylammonium hydroxide, phenyltrimethylammonium hydroxide, benzyltributylammonium hydroxide, and tetrahexylammonium hydroxide.

[0022] The catalyst 2 is a conventional platinum-based catalyst, including but not limited to Speier catalysts, Castells catalysts, or complexes formed by chloroplatinic acid with ketones, cyclopentadiene, esters, alcohols, and crown ethers.

[0023] Preferably, the amount of catalyst added is 0.0088%-0.01% of the total molar amount of the raw materials. The amount of catalyst affects the reaction rate, conversion rate, and frequency of side reactions during the reaction process.

[0024] The solvent is a conventional solvent capable of dissolving the modified phthalonitrile monomer, catalyst one, carbon-carbon double bond monomer containing crosslinking groups, siloxane monomer containing light-absorbing groups, and catalyst two, including alkanes, ketones, alcohols, ethers, and esters. Examples include dipentane, hexane, heptane, octane, benzene, toluene, xylene, acetone, methanol, ethanol, butanol, ethylene glycol butyl ether, diethylene glycol butyl ether, triethylene glycol butyl ether, tetraethylene glycol butyl ether, ethylene glycol hexyl ether, diethylene glycol hexyl ether, diethylene glycol-2-ethylhexyl ether, ethylene glycol butyl ether acetate, diethylene glycol butyl ether acetate, 2-methoxyethyl acetate, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene glycol butyl ether, dipropylene glycol methyl ether, propylene glycol methyl ether acetate, etc. Diol ethyl ether acetate, propylene glycol-1,2-dimethyl ether, propylene glycol diacetate, methyl methoxy acetate, dimethyl ketone, cyclohexanone, diisobutyl ketone, N-methylpyrrolidone, ethyl acetate, butyl acetate, 2-methylpropyl acetate, 3-methylbutyl acetate, ethyl lactate, methyl 3-methoxypropionate, cyclopentyl methyl ether, 4-hydroxy-4-methyl-2-pentaone, 3,5,5-trimethyl-1-hexanol, diethyl ether, dibutyl ether, tetrahydrofuran, dichloromethane, chloroform, or carbon tetrachloride.

[0025] The reaction temperature is 20-270℃, and the reaction time is 5 min to 24 h.

[0026] Step (3) is performed under reduced pressure distillation in an inert atmosphere.

[0027] Preferably, the pressure of the vacuum distillation is 5-25 mmHg, the temperature is 40-100℃, and the time is 40-60 min.

[0028] A third aspect of the present invention provides a silicon-rich antireflective coating, which is obtained by spin-coating the silicon-rich antireflective resin onto a semiconductor substrate and then curing and baking it at high temperature.

[0029] The silicon-rich antireflective coating of the present invention has good stability and solvent resistance. Moreover, the silicon content and optical parameters in the silicon-rich antireflective coating can be finely controlled, which can meet the requirements of etching rate and antireflective performance of silicon-rich antireflective coating under different application scenarios, and has broad application prospects in the field of photolithography technology.

[0030] Compared with the prior art, the present invention has the following beneficial effects: 1. Excellent molecular structure and properties: The polymerization reaction is carried out using modified phthalonitrile monomers. During the high-temperature curing process, cyano groups polymerize to form phthalocyanine conjugated rings, giving the silicon-rich antireflective resin good solvent resistance and storage stability. Siloxane monomers are introduced into the molecular periphery through hydrosilylation reactions, successfully constructing a silicon-rich antireflective resin with high silicon content, light-absorbing groups, and crosslinking groups, demonstrating high practical value.

[0031] 2. Innovative two-step synthesis method: First, a phthalonitrile prepolymer is prepared, followed by a hydrosilylation reaction with a siloxane monomer containing light-absorbing groups. This process design effectively avoids the problem of poor stability caused by self-polymerization in the traditional sol-gel method. The operation is simple and controllable, requiring only vacuum distillation to efficiently obtain pure silicon-rich antireflective resin, significantly simplifying post-processing steps. On the other hand, this molecular structure design strategy offers high freedom, allowing for precise control of silicon content and optical parameters in the resulting silicon-rich antireflective coating after spin coating and baking, thus meeting the requirements of etching rate and antireflective performance of silicon-rich antireflective coatings in different application scenarios.

[0032] 3. The silicon-rich antireflective coating prepared using the above-mentioned raw materials and synthesis methods has good stability and solvent resistance. Through molecular structure design, the silicon content and optical parameters can be precisely controlled. It has broad application potential in the field of advanced photolithography technology, especially at nodes that require precise control of etching selectivity and optical performance. Attached Figure Description

[0033] Figure 1 The infrared spectrum of the silicon-rich antireflective resin in Embodiment 1 of the present invention; Figure 2 This is the 1H NMR spectrum of the silicon-rich antireflective resin in Example 1 of the present invention. Detailed Implementation

[0034] The technical solution of the present invention will be further described and illustrated below with reference to specific embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are only for the purpose of helping to understand the present invention and are not intended to limit the specific scope of the present invention. Furthermore, the accompanying drawings used herein are merely for better illustrating the content disclosed in the present invention and do not limit the scope of protection. Unless otherwise specified, the raw materials used in the embodiments of the present invention are all commonly used in the art, and the methods used in the embodiments are all conventional methods in the art.

[0035] Example 1 18.3 g of m-nitrophthalonitrile, 13.4 g of 2-allylphenol, 0.5 g of potassium carbonate, and 50 g of N-methylpyrrolidone were added to a 500 ml three-necked reactor. A reflux condenser was installed, and the mixture was continuously stirred and heated to 75 °C. After reaching the specified temperature, the reaction was maintained at this temperature for 8 hours. After vacuum filtration and washing, 25 g of modified phthalonitrile monomer was obtained. The modified phthalonitrile monomer and 5.9 g of 1,3,5,7-tetramethylcyclotetrasiloxane were added dropwise to a 100 ml three-necked reactor. 30 ml of toluene was added, and a reflux condenser was installed. Under a nitrogen atmosphere, 0.12817 g of caster catalyst was slowly added dropwise. The temperature was raised to 75 °C and the reaction was carried out for 10 hours. The silica-rich antireflective resin was obtained by vacuum distillation at a pressure of 10 mmg, a temperature of 50 °C, and a distillation time of 60 min. The method for determining the silicon content is as follows: the resin is slowly heated to 1000℃, and the mass of the remaining solid is the mass of silicon dioxide. The mass of silicon element and the silicon element content are calculated based on this mass, which is 28.6%, and the weight-average molecular weight is 18060.

[0036] Figure 1 This is the infrared spectrum of the silicon-rich antireflective resin prepared in Example 1. The spectrum shows that 2964 cm⁻¹... -1 The peak at 2874 cm⁻¹ represents the stretching vibration peak of methyl CH. -1 The peak at 1604 cm⁻¹ represents the absorption peak of CH in -OCH₃. -1 1496cm -1 1450cm -1 The absorption peak is Si-O-Si, 800 cm⁻¹. -1 The peak at this location is the Si-C absorption peak.

[0037] Figure 2 This is the 1H NMR spectrum of the silicon-rich antireflective resin prepared in Example 1. The spectrum shows that 7.2-7.7 ppm is the characteristic peak of the benzene ring hydrogen atom, 4.7 ppm is the characteristic peak of Si-H, and 0.24 ppm is the characteristic peak of Si-CH3.

[0038] Example 2 The only difference from Example 1 is that 11.8 g of 1,3,5,7-tetramethylcyclotetrasiloxane and 0.19226 g of caster catalyst were added in Example 2; otherwise, it was the same as Example 1. The silicon content was found to be 31.5%, and the weight-average molecular weight was 20,100.

[0039] Example 3 The only difference from Example 1 is that 0.557g of polymethylhydrosiloxane was added in Example 3; otherwise, it was the same as Example 1. The silicon content was found to be 27.9%, and the weight-average molecular weight was 18300.

[0040] Example 4 The only difference from Example 3 is that 15.4 g of m-aminophthalonitrile was added in Example 4; otherwise, it was the same as Example 3. The silicon content was found to be 27.5%, and the weight-average molecular weight was 18800.

[0041] Example 5 The only difference from Example 3 is that 18.3g of p-nitrophthalonitrile was added in Example 5; otherwise, it was the same as Example 3. The silicon content was found to be 28.2%, and the weight-average molecular weight was 19100.

[0042] Example 6 The only difference from Example 3 is that 15.4 g of p-aminophthalonitrile was added in Example 6; otherwise, it was the same as Example 3. The silicon content was found to be 29.1%, and the weight-average molecular weight was 21,100.

[0043] In summary, Examples 1-6 demonstrate that the present invention uses modified phthalonitrile monomers and silicon-oxygen bond monomers containing light-absorbing groups as reaction raw materials to prepare silicon-rich antireflective resins through hydrosilylation polymerization. The silicon content is greater than 25%, effectively ensuring high Si content and thus improving overall etching resistance. The weight average molecular weight is greater than 10,000, ensuring that the silicon-rich antireflective resins have good film-forming properties and stability.

[0044] Application Example 1 The silicon-rich antireflective resin material prepared in Example 1 was filtered using a PTFE filter membrane (0.1 μm pore size). 0.2 g of the resin was dissolved in 9.8 g of propylene glycol ethyl ether solvent, and 0.001 g of 4,4'-bis(4-aminophenoxy)diphenyl sulfone was added. After spin coating, the mixture was cured at high temperature to obtain silicon-rich antireflective coating sample 1.

[0045] Application Example 2 The silicon-rich antireflective resin material prepared in Example 2 was filtered using a PTFE filter membrane (0.1 μm pore size). 0.2 g of the resin was dissolved in 9.8 g of propylene glycol ethyl ether solvent, and 0.001 g of 4,4'-bis(4-aminophenoxy)diphenyl sulfone was added. After spin coating, it was cured at high temperature to obtain silicon-rich antireflective coating sample 2.

[0046] Application Example 3 The silicon-rich antireflective resin material prepared in Example 3 was filtered using a PTFE filter membrane (0.1 μm pore size). 0.2 g of the resin was dissolved in 9.8 g of propylene glycol ethyl ether solvent, and 0.001 g of 4,4'-bis(4-aminophenoxy)diphenyl sulfone was added. After spin coating, the mixture was cured at high temperature to obtain silicon-rich antireflective coating sample 3.

[0047] Application Example 4 The silicon-rich antireflective resin material prepared in Example 4 was filtered using a PTFE filter membrane (0.1 μm pore size). 0.2 g of the resin was dissolved in 9.8 g of propylene glycol ethyl ether solvent, and 0.001 g of 4,4'-bis(4-aminophenoxy)diphenyl sulfone was added. After spin coating, it was cured at high temperature to obtain silicon-rich antireflective coating sample 4.

[0048] Application Example 5 The silicon-rich antireflective resin material prepared in Example 5 was filtered using a PTFE filter membrane (0.1 μm pore size). 0.2 g of the resin was dissolved in 9.8 g of propylene glycol ethyl ether solvent, and 0.001 g of 4,4'-bis(4-aminophenoxy)diphenyl sulfone was added. After spin coating, the mixture was cured at high temperature to obtain silicon-rich antireflective coating sample 5.

[0049] Application Example 6 The silicon-rich antireflective resin material prepared in Example 6 was filtered using a PTFE filter membrane (0.1 μm pore size). 0.2 g of the resin was dissolved in 9.8 g of propylene glycol ethyl ether solvent, and 0.001 g of 4,4'-bis(4-aminophenoxy)diphenyl sulfone was added. After spin coating, the mixture was cured at high temperature to obtain silicon-rich antireflective coating sample 6.

[0050] The optical parameters of the silicon-rich antireflective coating samples from Application Examples 1-6 above were characterized at 193 nm, and the n, k values ​​and film thicknesses were obtained, as shown in Table 1. The results show that phthalonitrile monomers with different substituent modifications and siloxane monomers with different silicon contents can be directionally synthesized through molecular structure design, thereby preparing silicon-rich antireflective coatings with differentiated optical parameters (n, k values). This achieves directional control of the optical parameters of the silicon-rich antireflective coating, thus meeting the requirements for etching rate and antireflective capability of silicon-containing antireflective coatings in different application scenarios.

[0051] Table 1. Specific optical parameters and film thicknesses of silicon-rich antireflective coating samples in Examples 1-6 Solvent resistance test The silicon-rich antireflective coating sample 1 was sequentially immersed in PGMEA, PGME, and PGEE solutions for 5 minutes, and then the excess solvent was spin-coated for solvent resistance testing. The thickness of the silicon-rich antireflective coating sample 1 after the test was 56.001 nm, which was close to the thickness of 56.201 nm before the test. This indicates that the silicon-containing antireflective coating prepared by this silicon-rich antireflective resin has excellent solvent resistance and stability, and can still form an antireflective film of similar thickness after being immersed in multiple solutions.

[0052] The specific embodiments described herein are merely illustrative examples of the invention and are not intended to limit the implementation of the invention. Those skilled in the art can make various modifications or additions to the described specific embodiments or use similar methods to replace them; it is neither necessary nor possible to provide a complete list of all embodiments. However, obvious variations or modifications derived from the essential spirit of the invention still fall within the scope of protection of the invention, and interpreting them as any additional limitation would contradict the spirit of the invention.

Claims

1. A silicon-rich antireflective resin, characterized by, Having a structure as shown in formula (1): Formula (1) Wherein, x, y, z are respectively 0 or 1.

2. The silicon-rich antireflective resin of claim 1, wherein The silicon element content of the silicon-rich anti-reflective resin is 25%-35% by mass percentage.

3. The silicon-rich antireflective resin of claim 1, wherein The weight average molecular weight of the silicon-rich anti-reflective resin is 10000-70000.

4. The method of producing a silicon-rich anti-reflective resin according to any one of claims 1 to 3, characterized by, Comprise: (1) dissolving the modified phthalonitrile monomer, catalyst one and carbon-carbon double bond monomer containing crosslinking group in solvent, and obtaining mixture A by reaction; (2) dissolving mixture A, siloxane monomer containing light-absorbing group and catalyst two in solvent, and obtaining mixture B by reaction; (3) removing residual solvent of mixture B by reduced pressure distillation, and obtaining the silicon-rich anti-reflective resin.

5. The method of producing a silicon-rich anti-reflective resin according to claim 4, characterized by, The modified phthalonitrile monomer is ortho-nitro-phthalonitrile, meta-nitro-phthalonitrile, para-nitro-phthalonitrile, ortho-amino-phthalonitrile, meta-amino-phthalonitrile or para-amino-phthalonitrile.

6. The method of claim 4, wherein the silicon-rich antireflection resin is prepared by the steps of: The carbon-carbon double bond monomer containing crosslinking group is 2-allyl phenol, propyl glycidyl ether, epoxy butene, 1,2-epoxy-5-cyclooctene, 3,4-epoxy-1-cyclohexene, 1,2-epoxy-5-hexene, 4-vinyl epoxy cyclohexane, 1,2-epoxy-9-decene or 1,2-epoxy-4-vinyl cyclohexane.

7. The method of claim 4, wherein the silicon-rich antireflection resin is prepared by the steps of: The siloxane monomer containing light-absorbing group is 1,3,5,7-tetramethylcyclotetrasiloxane, tetramethyldisiloxane, polymethylhydrosiloxane or pentamethyldisiloxane.

8. The method of claim 4, wherein the silicon-rich antireflection resin is prepared by the steps of: The catalyst one is base catalyst.

9. The method of claim 4, wherein the silicon-rich antireflection resin is prepared by the steps of: The catalyst two is platinum-based catalyst.

10. The silicon-rich antireflective coating prepared from the silicon-rich antireflective resin according to any one of claims 1 to 3, characterized in that, The silicon-rich anti-reflective coating is obtained by spin coating the silicon-rich anti-reflective resin on the semiconductor substrate and high-temperature curing baking.

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