A mask

Abstract

This invention relates to the field of display technology and provides a photomask comprising: a pixel area, a clearance area, and a marking area. The pixel area includes multiple pixel vias, and the clearance area surrounds the marking area, with the exterior of the clearance area surrounded by the multiple pixel vias. The photomask includes a first surface and a second surface opposite each other along its thickness direction. Multiple first grooves are provided on one side of the first surface of the clearance area, and multiple second grooves are provided on one side of the second surface of the clearance area. The arrangement of the first and second grooves is the same as the arrangement of the pixel vias, and the center points of the first and second grooves do not coincide in the thickness direction of the photomask. The depth of the first and second grooves adjacent to the pixel area is half the thickness of the photomask, and the depth of the first and second grooves adjacent to the marking area is greater than half the thickness of the photomask and less than or equal to two-thirds the thickness of the photomask. The photomask of this application solves the technical problems of pixel area wrinkles and easy deformation of marking vias in existing FMMs.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a photomask. Background Technology

[0002] In the field of display technology, FMM (Fine Metal Mask) is a key material used in the manufacture of OLED (Organic Light Emitting Diode) panels. It is mainly used in the vacuum evaporation process to deposit RGB (red, green, and blue) sub-pixel materials onto the display panel through the pixel openings (AA areas) on the FMM, thereby achieving high-resolution display.

[0003] FMM (Fixed Metal Model) layouts contain various types of opening designs. Among them, the shiftmark through-hole is used for PPA (Patterned Precision Alignment) testing during vapor deposition. The function of this hole is to allow the equipment to assess the PPA accuracy of that area by capturing the vapor deposition pattern of the through-hole on the glass substrate. In existing FMMs, the pixel opening area includes multiple densely packed pixel opening through-holes. Between the shiftmark through-hole and the surrounding pixel opening area is a solid substrate clearance zone, which is the area through which the vapor deposition material cannot pass, ensuring that the lens does not mistakenly capture the image. Due to uneven stress distribution in this area, wrinkles are prone to occur in the pixel opening area during FMM setup. To address this, the clearance zone is partially etched to alleviate wrinkling. Figure 1 In this case, the wrinkles are somewhat relieved, but they still exist.

[0004] Furthermore, the area of ​​the clearance zone is larger than that of the marking through-hole. During the evaporation of organic materials, the larger clearance zone is more prone to metal thermal expansion at higher temperatures (around 80°C). The marking through-hole is prone to deformation, which can lead to misalignment of the evaporated material or a smaller marking. This can cause changes in the markings on the glass substrate, affecting the PPA test results and significantly impacting production yield.

[0005] Therefore, it is now necessary to solve the problems of wrinkles in the pixel opening area of ​​FMM and easy deformation of the marking via. Summary of the Invention

[0006] The purpose of this invention is to provide a photomask that solves the technical problems of wrinkles in the pixel opening area and easy deformation of the marking vias in the existing FMM.

[0007] In a first aspect, embodiments of the present invention provide a photomask, comprising: a pixel area, a clearance area, and a marking area. The pixel area includes a plurality of pixel vias, the clearance area surrounds the marking area, and the exterior of the clearance area is surrounded by the plurality of pixel vias. The marking area includes marking vias. The photomask includes a first surface and a second surface opposite to each other along the thickness direction. A plurality of first grooves are provided on one side of the first surface of the clearance area, and a plurality of second grooves are provided on one side of the second surface of the clearance area. The arrangement of the plurality of first grooves is the same as the arrangement of the pixel vias, and the arrangement of the plurality of second grooves is the same as the arrangement of the pixel vias. The center points of the first grooves and the second grooves do not coincide in the thickness direction of the photomask. The depth of the first groove and the second groove adjacent to the pixel area is half the thickness of the photomask, and the depth of the first groove and the second groove adjacent to the marking area is greater than half the thickness of the photomask and less than or equal to two-thirds the thickness of the photomask.

[0008] Furthermore, the opening size of the first side of the marking through hole is smaller than the opening size of the second side, and the distance between the first groove closest to the marking through hole and the marking through hole is greater than or equal to the distance between the second groove closest to the marking through hole and the marking through hole.

[0009] Furthermore, when the pixel vias are arranged in a staggered manner, the projections of the first groove and the second groove in the mask thickness direction alternate in both the mask stretching direction and the direction perpendicular to the mask stretching direction.

[0010] Furthermore, when the pixel vias are arranged in a staggered manner, the distance between the first groove or the second groove adjacent to the pixel area and the adjacent pixel via is 1-2 times the distance between the adjacent pixel vias with the shortest distance.

[0011] Furthermore, the arrangement of the first groove and the second groove is symmetrical about the straight line containing the diagonal of the marking area.

[0012] Furthermore, when the pixel vias are arranged in parallel, the line connecting the first groove and the line connecting the second groove are parallel to each other in the stretching direction of the mask and the projection of the line connecting them in the stretching direction does not coincide. In addition, along the stretching direction of the mask, the projections of the first groove and the second groove in the thickness direction of the mask alternate with each other.

[0013] Furthermore, when the pixel vias are arranged in parallel, the distance between the first groove or the second groove adjacent to the pixel area and the adjacent pixel via is 1.5-2.5 times the distance between the adjacent pixel vias with the shortest distance.

[0014] Furthermore, the arrangement of the first groove and the second groove is symmetrical about the straight line containing the perpendicular line of the marking area that is perpendicular to the stretching direction of the mask.

[0015] Furthermore, the depth of the first and second grooves located between the first and second grooves adjacent to the pixel area and the first and second grooves adjacent to the identifier area is greater than or equal to the depth of the first and second grooves adjacent to the pixel area and less than or equal to the depth of the first and second grooves adjacent to the identifier area.

[0016] Furthermore, when the number of the identification through-holes is 1, the distance between the first groove or the second groove adjacent to the identification through-hole and the identification through-hole is greater than or equal to the distance between the two shortest pixel through-holes and less than or equal to twice the distance between the two shortest pixel through-holes; when the number of the identification through-holes is greater than 1, the distance between the first groove or the second groove adjacent to the identification through-hole and the center of the identification area is greater than twice the distance between the two shortest pixel through-holes and less than or equal to four times the distance between the two shortest pixel through-holes.

[0017] The embodiments of the present invention have at least the following technical effects:

[0018] An embodiment of the present invention provides a photomask including a pixel area, a clearance area, and a marking area. The pixel area includes multiple pixel vias, the clearance area surrounds the marking area, and the outside of the clearance area is surrounded by multiple pixel vias. The marking area includes one or more marking vias. For example, the marking area includes one marking via. The photomask includes a first surface and a second surface opposite to each other along the thickness direction. The first surface is a glass surface, that is, the surface close to the glass substrate during evaporation, and the second surface is an evaporation surface, that is, the surface close to the evaporation source during evaporation. Since the pixel area occupies the largest area on the entire photomask, and although the clearance area and marking area are small, the clearance area is a region where the vapor deposition material cannot pass through. Therefore, during the screen stretching process, the pixel area will wrinkle due to stress mismatch with the pixel area. Thus, multiple first grooves need to be set on one side of the first surface of the clearance area, and multiple second grooves need to be set on one side of the second surface of the clearance area. The arrangement of the multiple first grooves is the same as the arrangement of the pixel vias, and the arrangement of the multiple second grooves is the same as the arrangement of the pixel vias. The same arrangement can be understood as the distance between the center points of any two adjacent first grooves, or the distance between the center points of any two adjacent second grooves, being equal to the distance between the center points of any two adjacent pixel vias parallel to the line connecting them. Moreover, the center points of the first grooves and the center points of the second grooves do not coincide in the thickness direction of the photomask. This allows the stress in the clearance area to match the stress of the surrounding pixel area, reducing wrinkles in the pixel area during screen stretching.

[0019] Meanwhile, since the through-holes in the marking area allow the vapor-deposited material to pass through, markings used for detecting PPA (Patterned Precision Alignment) are formed on the glass substrate. Compared to the surrounding clearance area, the marking area is surrounded and has a smaller area. During vapor deposition, to avoid the influence of metal thermal expansion in the clearance area on the marking through-holes, the depth of the first and second grooves adjacent to the pixel through-holes is set to half the thickness of the mask, ensuring that no wrinkles are generated in the pixel area. The depth of the first and second grooves adjacent to the marking area is greater than half the thickness of the mask and less than or equal to two-thirds of the thickness of the mask. In the clearance area near the marking through-holes, the depth of the first and second grooves is greater than half the thickness of the mask to minimize the metal volume and reduce the impact of metal thermal expansion. However, it is also necessary to consider that the clearance area cannot allow the vapor-deposited material to pass through. Therefore, the depth of the first and second grooves is less than or equal to two-thirds of the thickness of the mask. This also ensures that the clearance area is not pierced by wet etching during mask preparation and that the mesh is not torn during screen stretching.

[0020] Therefore, the photomask of this application has a first groove and a second groove on the first and second sides of the clearance area, respectively, with the same arrangement of pixel vias in the pixel area, which solves the wrinkling problem of the pixel area of ​​the photomask when the screen is stretched. The depth of the first groove and the second groove adjacent to the pixel vias is half the thickness of the photomask, while the depth of the first groove and the second groove adjacent to the marking area is greater than half the thickness of the photomask and less than or equal to two-thirds the thickness of the photomask. This reduces the metal volume near the marking vias and reduces the problem of easy deformation of the marking vias caused by metal thermal expansion. Attached Figure Description

[0021] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of existing technology;

[0023] Figure 2 A top view schematic diagram of the regional distribution of a photomask provided in an embodiment of the present invention;

[0024] Figure 3 A magnified top view of the clearance area of ​​a mask with staggered pixel vias provided in an embodiment of the present invention;

[0025] Figure 4 for Figure 3 Cross-sectional view along the thickness direction of the photomask, A11-A12;

[0026] Figure 5 for Figure 3 Cross-sectional view along the thickness direction of the photomask, from A21 to A22;

[0027] Figure 6 for Figure 3 Cross-sectional view along the thickness direction of the photomask, from A31 to A32;

[0028] Figure 7 This is a magnified top view of the clearance area of ​​a mask with parallel arrangement of pixel vias, provided in an embodiment of the present invention.

[0029] Figure 8 for Figure 7 Cross-sectional view of B11-B12 along the thickness direction of the photomask;

[0030] Figure 9 for Figure 7 Cross-sectional view of B21-B22 along the thickness direction of the mask;

[0031] Figure 10 for Figure 7 The first cross-sectional view along the thickness direction of the photomask, B31-B32;

[0032] Figure 11 for Figure 7 The second cross-sectional view along the thickness direction of the mask, B31-B32;

[0033] Figure 12 for Figure 7 Cross-sectional view along the thickness direction of the photomask, from B41 to B42.

[0034] Icons: 1-Pixel area; 2-Clear area; 3-Identifier area; 11-Pixel through hole; 21, 211~219-First groove; 22, 221~225-Second groove; 31-Identifier through hole. Detailed Implementation

[0035] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0036] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0037] Those skilled in the art will understand that, unless specifically stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the term “comprising” as used in this specification means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof. The term “and / or” as used herein includes all or any units and all combinations of one or more associated listed items.

[0038] For the first aspect, please refer to Figures 2 to 12 This invention provides a photomask, comprising: a pixel region 1, a clearance region 2, and a marking region 3. The pixel region 1 includes a plurality of pixel vias 11. The clearance region 2 surrounds the marking region 3, and the exterior of the clearance region 2 is surrounded by the plurality of pixel vias 11. The marking region 3 includes marking vias 31. The photomask includes a first surface S1 and a second surface S2 opposite to each other along the thickness direction. A plurality of first grooves 21 are provided on one side of the first surface of the clearance region, and a plurality of second grooves 22 are provided on one side of the second surface of the clearance region. The arrangement of the plurality of first grooves 21 is the same as the arrangement of the pixel vias 11, and the arrangement of the plurality of second grooves 22 is the same as the arrangement of the pixel vias 11. The center point of the first groove 21 and the center point of the second groove 22 do not coincide in the thickness direction of the photomask. The depth of the first groove 21 and the second groove 22 adjacent to the pixel region 1 is half the thickness of the photomask, and the depth of the first groove 21 and the second groove 22 adjacent to the marking region 3 is greater than half the thickness of the photomask and less than or equal to two-thirds the thickness of the photomask.

[0039] In this embodiment, the mask includes a pixel area 1, a clearance area 2, and a marking area 3. The pixel area 1 includes a plurality of pixel vias 11. The clearance area 2 surrounds the marking area 3, and the outside of the clearance area 2 is surrounded by a plurality of pixel vias 11. The marking area 3 includes one or more marking vias 31. The figure shows that the marking area 3 includes one marking via 31 as an example. The mask includes a first surface S1 and a second surface S2 that are opposite each other along the thickness direction. The first surface S1 is the glass surface, that is, the side that is close to the glass substrate during evaporation. The second surface S2 is the evaporation surface, that is, the side that is close to the evaporation source during evaporation. Since pixel area 1 occupies the largest area on the entire photomask, although the areas of clearance area 2 and marking area 3 are small, clearance area 2 is an area where the vapor deposition material cannot pass through. Therefore, during the screen stretching process, the stress mismatch between clearance area 2 and pixel area 1 will cause wrinkles in pixel area 1. Thus, multiple first grooves 21 need to be set on one side of the first surface of clearance area 2, and multiple second grooves 22 need to be set on one side of the second surface of clearance area 2. The arrangement of multiple first grooves 21 is the same as the arrangement of pixel vias 11, and the arrangement of multiple second grooves 22 is the same as the arrangement of pixel vias 11. The same arrangement can be understood as the distance between the center points of any two adjacent first grooves 21 or the distance between the center points of any two adjacent second grooves 22 being equal to the distance between the center points of any two adjacent pixel vias 11 parallel to the line connecting them. Moreover, the center points of the first grooves 21 and the center points of the second grooves 22 do not coincide in the thickness direction of the photomask. This allows the stress of clearance area 2 to match the stress of the surrounding pixel area 1, reducing wrinkles in pixel area 1 during screen stretching.

[0040] Simultaneously, since the through-hole 31 of the marking area 3 allows vapor-deposited material to pass through, a PPA (Patterned Precision) is formed on the glass substrate for detection. The markings used for alignment (precise pattern alignment) are surrounded by the outer clearance area 2, and the marking area 3 is smaller. During vapor deposition, to avoid the influence of the metal thermal expansion of the clearance area 2 on the marking through-hole 31, the depth of the first groove 21 and the second groove 22 adjacent to the pixel through-hole 11 is set to half the thickness of the mask, ensuring that the pixel area 1 does not produce wrinkles. The depth of the first groove 21 and the second groove 22 adjacent to the marking area 3 is greater than half the thickness of the mask and less than or equal to two-thirds of the thickness of the mask. In the clearance area 2 near the marking through-hole 31, the depth of the first groove 21 and the second groove 22 is greater than half the thickness of the mask to minimize the metal volume and thus reduce the impact of metal thermal expansion. However, it is also necessary to consider that the clearance area 2 cannot allow the vapor deposition material to pass through. Therefore, the depth of the first groove 21 and the second groove 22 is less than or equal to two-thirds of the thickness of the mask. This also ensures that the clearance area 2 can remain un-wet-etched during mask preparation and that it will not be torn during screen stretching.

[0041] Specifically, the first groove 21 and the second groove 22 adjacent to the marking area 3 can be referred to Figure 3 For example, the first and second grooves (excluding the second groove 221 and the first groove 213) between the second groove 221 and the first groove 213 belong to the first groove 21 and the second groove 22 adjacent to the marking area 3. Figure 7 For example, the first and second grooves (excluding the second grooves 224 and 225) between the second grooves 224 and 225, the first grooves 214 and 215 both belong to the first grooves 21 and 22 adjacent to the marking area 3. That is, these grooves on the innermost side of the clearance area are the first grooves 21 and 22 adjacent to the marking area 3, and their depth T3 is greater than half of the mask thickness T1 and less than or equal to two-thirds of the mask thickness T1; the first grooves 21 and 22 adjacent to the pixel area 1 can be referred to Figures 7 to 12 For example, the first groove 21 and the second groove 22, the first groove 218 and 219 under the B41-B42 cut-off line, and the depth T2 of the first groove 21 and the second groove 22, the first groove 218 and 219 under the B41-B42 cut-off line is half of the mask thickness T1. That is, these grooves on the outermost side of the clearance area are the first groove 21 and the second groove 22 adjacent to the pixel area 1.

[0042] Therefore, the mask of this application has a first groove 21 and a second groove 22 on the first and second sides of the clearance area 2, respectively, with the same arrangement of pixel vias in the pixel area. This solves the wrinkling problem of the pixel area 1 of the mask when it is stretched. The depth of the first groove 21 and the second groove 22 adjacent to the pixel vias is half the thickness of the mask. The depth of the first groove 21 and the second groove 22 adjacent to the marking area 3 is greater than half the thickness of the mask and less than or equal to two-thirds of the thickness of the mask. This reduces the metal volume near the marking via 31 and reduces the problem of easy deformation of the marking via 31 due to metal thermal expansion.

[0043] It should be noted that, Figure 3 and Figure 7Each solid circle represents a first groove 21, and each dashed circle represents a second groove 22. However, the above diagram does not limit the shape and size of the first groove 21 and the second groove 22. The first groove 21 and the second groove 22 can also be square grooves. Circles are used here to distinguish them from pixel vias for easier understanding. The first groove 21 and the second groove 22 do not necessarily have to be the same size as the circles in the diagram. The actual opening size can be smaller, for example, within 100 micrometers. The diagram is just a demonstration of one arrangement of the first groove 21 and the second groove 22. The dashed circle of the second groove 22 cannot be directly seen in the top view facing the first surface S1, so it is indicated by a dashed line. The dashed frame of the clearance area 2 and the marking area 3 in the diagram is only to indicate the division of the clearance area 2 and the marking area 3. This dashed frame does not exist on the actual mask.

[0044] Optionally, the opening size C11 of the first side of the marking through hole 31 is smaller than the opening size C21 of the second side, and the distance between the first groove 21 closest to the marking through hole 31 and the marking through hole 31 is greater than or equal to the distance between the second groove 22 closest to the marking through hole 31 and the marking through hole 31.

[0045] In this embodiment, if the first groove 21 and the second groove 22 can be evenly distributed around the marking area 3, for example... Figure 3 The first groove 21 and the second groove 22 are the same number and evenly alternately distributed around the marking area 3. In this case, the distance between the first groove 21 closest to the marking through hole 31 and the marking through hole 31 is equal to the distance between the second groove 22 closest to the marking through hole 31 and the marking through hole 31. If the first groove 21 and the second groove 22 are not evenly distributed around the marking area 3, for example... Figure 7 At this time, the groove closest to the marking through hole 31 should be the first groove with its opening located on the first surface S1 of the mask, such as the first grooves 214, 215, 216 and 217. Because the opening size C11 of the first surface of the marking through hole 31 is smaller than the opening size C21 of the second surface, and the first surface S1 is closer to the glass substrate, the opening size C11 of the first surface has a greater impact on the preparation of the marking on the glass substrate. Selecting the first groove 21 as the groove closest to the marking through hole 31 can more effectively reduce the deformation effect of the opening size C11 of the first surface due to the thermal expansion of the metal. At this time, the distance between the first groove 21 closest to the marking through hole 31 and the marking through hole 31 is greater than the distance between the second groove 22 closest to the marking through hole 31 and the marking through hole 31.

[0046] Optionally, when the pixel vias 11 are arranged in a staggered manner, the projections of the first groove 21 and the second groove 22 on the thickness direction of the mask alternate in the mask stretching direction and perpendicular to the mask stretching direction.

[0047] In this embodiment, when the pixel vias 11 are arranged in a staggered manner, at least one side of the closed pattern formed by the projection lines of any four adjacent pixel vias 11 is not parallel to the mask stretching direction. Figure 3 The staggered arrangement in the image is that two adjacent rows or two columns of pixel vias are arranged alternately. Therefore, the projections of the first groove 21 and the second groove 22 in the clearance area 2 onto the thickness direction (Z direction) of the mask are alternating, whether in the mask stretching direction (X direction) or perpendicular to the mask stretching direction (Y direction). This is beneficial for stress matching between the clearance area 2 and the pixel area 1.

[0048] Optionally, when the pixel vias 11 are arranged in a staggered manner, the distance between the first groove 21 and the second groove 22 adjacent to the pixel area 1 and the adjacent pixel via 11 is 1-2 times the distance between the adjacent pixel vias 11 with the shortest distance.

[0049] In this embodiment, the distance between the first groove 21 and the second groove 22 near the pixel area 1 and their nearest pixel via is 1-2 times the distance between their nearest pixel via and their adjacent nearest pixel via. For example, Figure 3 The distance between the first groove 21 and its nearest pixel via is E1, while the distance between that pixel via and its nearest adjacent pixel via is E2. E1 should be 1 to 2 times E2. Similarly, the distance between the second groove 22 and its nearest pixel via is F1, while the distance between that pixel via and its nearest adjacent pixel via is F2. F1 should be 1 to 2 times F2. This ensures that the grooves adjacent to pixel area 1 are neither too close to pixel area 1, affecting the vapor deposition process, nor too far from pixel area 1, resulting in poor stress matching and inability to remove wrinkles during screen fabrication.

[0050] Preferably, when the grooves are staggered, the arrangement of the first groove 21 and the second groove 22 in the clearance area 2 is symmetrical about the straight line containing the diagonal of the marking area 3. In this embodiment, since the distance between the first groove 21 and the second groove 22 near the pixel area 1 and their nearest pixel via is only 1-2 times the distance between their nearest pixel via and their adjacent nearest pixel via, this range may cause the arrangement of the first groove 21 and the second groove 22 in the clearance area 2 to be asymmetrical about the straight line containing the diagonal of the marking area 3. This asymmetry will affect the stress distribution in the clearance area 2. Therefore, when setting the first groove 21 and the second groove 22, their arrangement about the straight line containing the diagonal of the marking area 3 should also be considered (e.g., Figure 3 The lines containing A11-A12 and A21-A22 are symmetrical.

[0051] Optionally, when the pixel vias 11 are arranged in a parallel configuration, refer to Figure 7 The line connecting the first groove 21 and the line connecting the second groove 22 perpendicular to the stretching direction of the mask are parallel to each other and their projections in the stretching direction do not coincide. Furthermore, along the stretching direction of the mask, the projections of the first groove 21 and the second groove 22 in the thickness direction of the mask alternate with each other.

[0052] In this embodiment, when the pixel vias 11 are arranged in parallel, at least two sides of the closed pattern formed by the projection lines of any four adjacent pixel vias 11 are parallel to the mask stretching direction (X direction). The projections of the first groove 21 and the second groove 22 in the mask thickness direction (Z direction) are not alternating in the Y direction, but alternating in the mask stretching direction (X direction). The lines P1P2 connecting the first groove 21 and Q1Q2 connecting the second groove 22 are parallel to each other in the stretching direction (Y direction) and the projections of the lines connecting them in the stretching direction do not coincide. This is to match the stress of the mask along the X direction when stretching the mesh and to better eliminate the wrinkles in the pixel area 1.

[0053] Optionally, when the pixel vias 11 are arranged in parallel, the distance between the first groove 21 and the second groove 22 adjacent to the pixel area and the adjacent pixel via 11 is 1.5-2.5 times the distance between the adjacent pixel vias 11 with the shortest distance.

[0054] In this embodiment, the distance between the first groove 21 and the second groove 22 near the pixel area 1 and their nearest pixel aperture 11 is 1.5-2.5 times the distance between their nearest pixel aperture 11 and its adjacent nearest pixel aperture 11. For example, Figure 7 The distance between the first groove 21 and its nearest pixel aperture 11 is G1, while the distance between the pixel aperture 11 and its nearest adjacent pixel aperture 11 is G2. G1 should be 1.5 to 2.5 times G2. Similarly, the distance between the second groove 22 and its nearest pixel aperture 11 is H1, while the distance between the pixel aperture 11 and its nearest adjacent pixel aperture 11 is H2. H1 should be 1.5 to 2.5 times H2. This ensures that, when arranged in parallel, the grooves adjacent to pixel area 1 are neither too close to pixel area 1, affecting the vapor deposition of pixel area 1, nor too far from pixel area 1, resulting in poor stress matching and inability to remove wrinkles during mesh stretching. It should be noted that... Figure 7 The arrangement of the first groove 21 and the second groove 22 in the diagram is merely a demonstration of one possible arrangement. It is sufficient that the distance between the outermost first groove 21 and the second groove 22 of the clearance area and their nearest pixel via is 1.5-2.5 times the distance between the nearest pixel via and its adjacent nearest pixel via. Furthermore, because... Figure 7The arrangement of the pixel via 11 is square, so G2 equals H2. This is not a restriction on a certain pixel via and its nearest adjacent pixel via, but only a layout demonstration. If the layout is not square, then the nearest pixel via can be selected.

[0055] Preferably, when arranged in parallel, the arrangement of the first groove 21 and the second groove 22 in the clearance area 2 is symmetrical about the line containing the perpendicular line of the marking area 3 perpendicular to the mask stretching direction. In this embodiment, since the distance between the first groove 21 and the second groove 22 near the pixel area 1 and their nearest pixel aperture is 1.5-2.5 times the distance between their nearest pixel aperture and their adjacent nearest pixel aperture, this range may cause the arrangement of the first groove 21 and the second groove 22 in the clearance area 2 to be asymmetrical about the line containing the perpendicular line of the marking area 3 perpendicular to the mask stretching direction. This asymmetry will affect the stress distribution in the clearance area 2 when the mask is stretched. Therefore, when setting the first groove 21 and the second groove 22, the arrangement of their perpendicular line about the marking area 3 perpendicular to the mask stretching direction should be considered (e.g., Figure 7 The line containing B21-B22 is symmetrical.

[0056] Optionally, the depth of the first groove 21 and the second groove 22 located between the first groove 21 and the second groove 22 adjacent to the pixel aperture 11 and the first groove 21 and the second groove 22 adjacent to the identifier area 3 is greater than or equal to the depth of the first groove 21 and the second groove 22 adjacent to the pixel aperture 11 and less than or equal to the depth of the first groove 21 and the second groove 22 adjacent to the identifier area 3.

[0057] In this embodiment, considering that if the area of ​​the clearance area 2 is large, the first groove 21 and the second groove 22 provided therein include not only the grooves closer to the pixel area 1 and the grooves closer to the identifier area 3, but also some grooves sandwiched between the grooves closer to the pixel area 1 and the grooves closer to the identifier area 3. In order to better balance the stress distribution within the clearance area 2, it is necessary to restrict the grooves sandwiched between the grooves closer to the pixel area 1 and the grooves closer to the identifier area 3. For example, in Figure 3The first grooves 211 and 212 under the A11-A12 section line, the second grooves 222 and 223 under the A21-A22 section line, and the first groove 213 and second groove 221 under the A31-A32 section line are all grooves sandwiched between the first groove 21 and second groove 22 closer to pixel area 1 and the first groove 21 and second groove 22 closer to identifier area 3. Therefore, the depth of these first grooves and second grooves sandwiched in the middle, such as the first grooves 211, 212 and 213, and the second grooves 221, 222 and 223, is greater than or equal to the depth of the first groove 21 and second groove 22 adjacent to the pixel via, and less than or equal to the depth of the first groove 21 and second groove 22 adjacent to the identifier area 3.

[0058] Optionally, in the direction from pixel area 1 to the identifier area 3, the depth 22 of the first groove 21 and the second groove gradually increases. In this embodiment, with... Figure 7 For example, the second grooves 224 and 225 below the B31-B32 section are also grooves sandwiched between the groove closer to pixel area 1 and the groove closer to the identifier area 3. The depth of the second grooves 224 and 225 can be as follows: Figure 11 The groove shown has the same depth as the one closer to pixel area 1, which is half the thickness of the mask. It can also have the same depth as the groove closer to marker area 3 (not shown in the figure), or even be... Figure 10 The depth of the groove shown is greater than half the thickness of the mask but less than that of the groove closer to the marker area 3, so that the depth of the first groove 21 and the second groove 22 gradually increases in the direction of the marker area 3 from the pixel area 1, which better alleviates the stress distribution in the clearance area 2.

[0059] Optionally, when the number of identification through-holes 31 is 1, the distance of the first groove 21 or the second groove 22 adjacent to the identification through-hole 31 from the identification through-hole 31 is greater than or equal to the distance between the two shortest pixel through-holes 11 and less than or equal to twice the distance between the two shortest pixel through-holes 11; when the number of identification through-holes 31 is greater than 1, the distance of the first groove 21 or the second groove 22 adjacent to the identification through-hole 31 from the center of the identification area is greater than twice the distance between the two shortest pixel through-holes 11 and less than or equal to four times the distance between the two shortest pixel through-holes 11.

[0060] In this embodiment, as Figure 3 and Figure 7 As shown, regardless of whether the arrangement is staggered or parallel, the distance between any two closest adjacent pixel apertures 11 is basically the same, as... Figure 3The interlacing degree of the interlaced columns shown is interlaced to halfway point, but there are other cases, such as when they are staggered, interlacing to one-third point. In this case, the distance between a certain pixel aperture 11 and its surrounding adjacent pixel apertures 11 will inevitably be different. In this case, the distance between the other pixel aperture 11 with the shortest distance to the first pixel aperture 11 is selected as the distance between the two shortest-distance pixel apertures 11. This represents the minimum distance limit between two openings on the entire mask, such as... Figure 3 and Figure 7 In the indicated area 3, there is only one through-hole 31, and it is located at the center of the indicated area 3. Figure 3 In the first groove 21 and the second groove 22 adjacent to the marking area 3, the distance between the farthest first groove 21 or second groove 22 adjacent to the marking through hole 31 and the center point of the marking through hole 31 is greater than the distance between the two shortest pixel through holes 11 and less than twice the distance between the two shortest pixel through holes 11. Figure 7 In the first groove 21 and the second groove 22 adjacent to the identification area 3, the distance from the center point of the nearest first groove 21 to the identification through hole 31 is equal to the distance between the two shortest pixel through holes 11, and the distance from the center point of the nearest second groove 22 and the farthest first groove 21 to the identification through hole 31 is greater than the distance between the two shortest pixel through holes 11 but less than twice the distance between the two shortest pixel through holes 11.

[0061] Also, as not shown in the figure, if the number of identification through-holes 31 in the identification area 3 is greater than 1, then the center of the identification area 3 should be the center point of the line connecting all the identification through-holes 31. In this case, the distance between the first groove 21 or the second groove 22 adjacent to the identification through-hole 11 and the center of the identification area 3 should be greater than twice the distance between the two shortest pixel through-holes 11 and less than or equal to four times the distance between the two shortest pixel through-holes 11. These distance restrictions are to reduce the adverse effects of the clearance area 2 on the identification through-holes 31 of the identification area 3 during vapor deposition.

[0062] Optionally, the cross-section of the first groove 21 and the second groove 22 along the thickness direction of the mask is U-shaped. In this embodiment, since the first groove 21 and the second groove 22 are staggered on both sides of the mask, especially the first groove 21 and the second groove 22 are deeper closer to the marking area 3, the bottom corners of the staggered first groove 21 and the second groove 22 are designed to avoid right angles or acute angles, and the lines at the bottom of the grooves are made as gentle as possible to prevent tearing at the bottom corners of the staggered first groove 21 and the second groove 22 during stretching.

[0063] Those skilled in the art will understand that the steps, measures, and schemes in the various operations, methods, and processes discussed in this invention can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and schemes in the various operations, methods, and processes discussed in this invention can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and schemes in the prior art that are similar to those disclosed in this invention can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0064] In the description of this invention, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0065] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0066] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0067] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0068] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A mask, characterized in that, The pixel region includes a plurality of pixel through holes, the clearance region surrounds the identification region, the outside of the clearance region is surrounded by a plurality of pixel through holes, and the identification region includes an identification through hole. The mask plate includes a first surface and a second surface opposite in the thickness direction, a plurality of first grooves are arranged on the first surface side of the clearance region, a plurality of second grooves are arranged on the second surface side of the clearance region, the arrangement of the plurality of first grooves is the same as the arrangement of the pixel through holes, the arrangement of the plurality of second grooves is the same as the arrangement of the pixel through holes, and the center points of the first grooves and the center points of the second grooves do not coincide in the thickness direction of the mask plate. The depth of the first groove and the second groove adjacent to the pixel region is half of the thickness of the mask plate, and the depth of the first groove and the second groove adjacent to the identification region is greater than half of the thickness of the mask plate and less than or equal to two-thirds of the thickness of the mask plate. The first surface opening size of the identification through hole is smaller than the second surface opening size, the distance between the first groove closest to the identification through hole and the identification through hole is greater than or equal to the distance between the second groove closest to the identification through hole and the identification through hole.

2. The mask according to claim 1, wherein, When the arrangement of the pixel through holes is staggered arrangement, in the stretching direction of the mask plate and perpendicular to the stretching direction of the mask plate, the projections of the first groove and the second groove in the thickness direction of the mask plate are alternated with each other.

3. The mask according to claim 1, wherein, When the arrangement of the pixel through holes is staggered arrangement, the distance between the first groove or the second groove adjacent to the pixel region and the adjacent pixel through hole is 1-2 times the distance between the adjacent pixel through holes with the shortest distance.

4. The mask according to claim 3, wherein, The arrangement of the first groove and the second groove is symmetrical about the straight line where the diagonal of the identification region is located.

5. The mask according to claim 4, wherein, When the arrangement of the pixel through holes is parallel arrangement, in the direction perpendicular to the stretching direction of the mask plate, the connecting lines of the first groove and the connecting lines of the second groove are parallel to each other, and the projections of the connecting lines in the stretching direction do not coincide, and in the stretching direction of the mask plate, the projections of the first groove and the second groove in the thickness direction of the mask plate are alternated with each other.

6. The mask of claim 1, wherein, When the arrangement of the pixel through holes is parallel arrangement, the distance between the first groove or the second groove adjacent to the pixel region and the adjacent pixel through hole is 1.5-2.5 times the distance between the adjacent pixel through holes with the shortest distance.

7. The mask according to claim 6, wherein, The arrangement of the first groove and the second groove is symmetrical about the straight line where the perpendicular bisector of the identification region perpendicular to the stretching direction of the mask plate is located.

8. The mask according to claim 7, wherein, The depth of the first groove and the second groove between the first groove and the second groove adjacent to the pixel region and the first groove and the second groove adjacent to the identification region is greater than or equal to the depth of the first groove and the second groove adjacent to the pixel region and less than or equal to the depth of the first groove and the second groove adjacent to the identification region.

9. The mask of claim 1, wherein, ​ 10. The mask of claim 1, wherein, When the number of the identification through holes is 1, the distance between the first groove or the second groove adjacent to the identification through hole and the identification through hole is greater than or equal to the distance between two shortest pixel through holes and less than or equal to 2 times the distance between the two shortest pixel through holes; when the number of the identification through holes is greater than 1, the distance between the first groove or the second groove adjacent to the identification through hole and the center of the identification area is greater than 2 times the distance between two shortest pixel through holes and less than or equal to 4 times the distance between the two shortest pixel through holes.

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