A mask

Abstract

This invention relates to the field of display technology and provides a photomask comprising: a pixel area, a clearance area, and a marker area. The clearance area surrounds the marker area, and the exterior of the clearance area is surrounded by multiple pixel vias. It includes a glass surface and a vapor-deposited surface opposite each other along the thickness direction. The vapor-deposited surface of the clearance area is provided with multiple grooves. The range of values ​​for the average unit volume remaining percentage of the clearance area is positively correlated with the average unit volume remaining percentage of the pixel area. When the distance from the center of the marker area to the nearest pixel via is less than or equal to 10 times the pixel pitch, the distance between the deepest groove and the center of the marker area is greater than or equal to half the distance from the center of the marker area to the nearest pixel via and less than or equal to three-fifths of the distance from the center of the marker area to the nearest pixel via. The depth of the deepest groove is greater than half the thickness of the photomask. The photomask of this application solves the technical problems of wrinkles in the pixel opening area and easy damage to the pixel vias in the prior art.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a photomask. Background Technology

[0002] In the field of display technology, FMM (Fine Metal Mask) is a key material used in the manufacture of OLED (Organic Light Emitting Diode) panels. It is mainly used in the vacuum evaporation process to deposit RGB (red, green, and blue) sub-pixel materials onto the display panel through the pixel openings (AA areas) on the FMM, thereby achieving high-resolution display.

[0003] In addition to the pixel aperture vias used for subpixel deposition, the FMM (Film Mesh Module) also includes shiftmark vias. These vias allow the camera to assess the PPA (Patterned Precision Alignment) accuracy of the area by capturing the deposition pattern of the material within the via on the glass substrate. In existing FMMs, the pixel aperture area comprises multiple densely packed pixel aperture vias. Between the shiftmark vias and the surrounding pixel aperture areas is a solid substrate clearance area through which the deposition material cannot pass, ensuring the lens does not mis-grasp the image. Due to uneven stress distribution in this area, wrinkles are prone to occur in the pixel aperture area during the FMM screen stretching process.

[0004] In addition, after the evaporation is completed, the mask and the glass substrate need to be separated. However, there is electrostatic adsorption between the mask and the glass substrate. The strength of electrostatic adsorption between the pixel opening area, the clearance area and the shiftmark via area is different, which may cause the pixel opening via around the clearance area to be easily torn and damaged during separation.

[0005] Therefore, it is now necessary to solve the problems of wrinkles in the pixel opening area during mesh fabrication and easy damage to vias when separating the mask and glass substrate. Summary of the Invention

[0006] The purpose of this invention is to provide a photomask that solves the technical problems of wrinkles in the pixel opening area and easy damage to pixel vias in the prior art.

[0007] In a first aspect, embodiments of the present invention provide a photomask, comprising: a pixel area, a clearance area, and a marking area. The pixel area includes multiple pixel vias, the clearance area surrounds the marking area, and the exterior of the clearance area is surrounded by the multiple pixel vias. The marking area includes marking vias. The photomask includes a glass surface and a vapor-deposited surface opposite each other along the thickness direction. The vapor-deposited surface of the clearance area is provided with multiple grooves. The range of values ​​for the average unit volume remaining percentage of the clearance area is positively correlated with the average unit volume remaining percentage of the pixel area. When the distance from the center of the marking area to the nearest pixel via is less than or equal to 10 times the pixel pitch, the distance between the deepest groove and the center of the marking area is greater than or equal to one-half of the distance from the center of the marking area to the nearest pixel via and less than or equal to three-fifths of the distance from the center of the marking area to the nearest pixel via. The depth of the deepest groove is greater than one-half of the thickness of the photomask.

[0008] Furthermore, the average unit volume remaining percentage of the clearance area is equal to the product of the average unit volume remaining percentage of the pixel area and the first parameter plus the second parameter, wherein the first parameter is 0.5 and the value range of the second parameter is 0.4~0.7.

[0009] Furthermore, the remaining percentage of the unit volume of the pixel area is greater than or equal to 20% and less than or equal to 40%.

[0010] Furthermore, the depth of the other grooves gradually decreases in the direction from the deepest groove to the pixel area and in the direction from the deepest groove to the identifier area.

[0011] Furthermore, the opening size of the groove is less than or equal to the opening size of the pixel aperture.

[0012] Furthermore, the distance between the groove adjacent to the pixel area and the pixel area is greater than or equal to the pixel pitch and less than or equal to 2.5 times the pixel pitch.

[0013] Furthermore, the distance between the groove and the through hole adjacent to the marking area is greater than or equal to the pixel pitch and less than or equal to 2.5 times the pixel pitch.

[0014] Furthermore, when the distance between the center of the marking area and the nearest pixel aperture is greater than 10 times the pixel pitch, the clearance area includes at least two rings of the deepest groove, and the distance between the two rings of the deepest groove is greater than or equal to 2 times the pixel pitch.

[0015] Furthermore, the depth of the groove between the two deepest grooves is less than that of the deepest groove.

[0016] Furthermore, the depth of the deepest groove is a first depth, and the clearance area between the deepest groove adjacent to the pixel area and the pixel area includes a groove with a depth less than the first depth; the clearance area between the deepest groove and the marking area includes a groove with a depth less than the first depth.

[0017] The embodiments of the present invention have at least the following technical effects:

[0018] This invention provides a photomask where multiple pixel vias surround a clearance area, which in turn surrounds a marking area. A groove is provided on one side of the vapor deposition surface of the clearance area to alleviate wrinkles. The average unit volume remaining percentage of the pixel area refers to the ratio of the remaining material volume per cubic centimeter of the substrate after pixel via fabrication to the material volume before pixel via fabrication. The average unit volume remaining percentage of the clearance area refers to the ratio of the remaining material volume per cubic centimeter of the substrate after groove fabrication to the material volume before groove fabrication. Since the pixel via size and spacing may vary for different photomasks, the average unit volume remaining percentage of the pixel area will vary depending on the actual photomask fabrication requirements. The change in the average unit volume remaining percentage of the pixel area is the key to affecting the strength of the pixel area. In order to balance the stress changes of the clearance area and the pixel area, the average unit volume remaining percentage of the clearance area is related to the average unit volume remaining percentage of the pixel area. The larger the average unit volume remaining percentage of the pixel area, the more the range of the average unit volume remaining percentage of the clearance area changes positively with the average unit volume remaining percentage of the pixel area. The groove set according to the above conditions can effectively remove the problem of pixel area wrinkles caused by stress mismatch between the clearance area and the pixel area during mesh stretching.

[0019] Meanwhile, grooves are set on the evaporation surface of the clearance area, while the glass surface of the clearance area remains a flat plane. During evaporation, electrostatic adsorption occurs between the glass substrate and the mask. At this time, the weight of the clearance area is reduced, resulting in better adhesion between the glass substrate and the clearance area, making the markings prepared through the marking vias more accurate. However, when separating the glass substrate and the mask later, because the clearance area adheres better to the glass substrate, the clearance area may still adhere to the glass substrate after the pixel area has been separated. The marking area will only separate after the clearance area is separated from the glass substrate. Therefore, the further the separation goes into the clearance area, the greater the force required to pull the pixel vias around the clearance area to overcome electrostatic adsorption, which may cause the pixel vias to tear or deform. To reduce the force exerted on the vias around the clearance area, when the distance between the center of the marking area and the nearest via is less than or equal to 10 times the pixel pitch, the distance between the deepest groove and the center of the marking area is greater than or equal to half the distance between the center of the marking area and the nearest via and less than or equal to three-fifths of the distance between the center of the marking area and the nearest via, and the depth of the deepest groove is greater than half the thickness of the mask.

[0020] The grooves deepen towards the midpoint between the marker area and the pixel area, with the deepest groove exceeding half the thickness of the mask. This artificially creates a stress-relief zone in the center of the clearance area. The force overcoming electrostatic attraction reaches a small peak upon separation in the center of the clearance area, and is then distributed by the deepest groove, making this area more susceptible to deformation and a more easily deformable stress-distributing region. Furthermore, since the deepest groove is flanked by shallower grooves, even if it deforms, the shallower grooves on either side provide a force transition and protection, ensuring the overall strength of the central clearance area prevents the deepest groove from tearing. If only grooves of uniform depth were uniformly arranged, the force overcoming electrostatic attraction would still be transmitted to the pixel aperture due to the uniform stress throughout the clearance area, still posing a risk of pixel aperture tearing. Meanwhile, since the clearance area is a barrier to the vapor deposition material, it's crucial to avoid weakening the edges of the clearance area due to excessively deep grooves. Furthermore, since the edges are closer to the fragile pixel areas, there's a risk of both pixel via tearing and groove tearing at the clearance area edges. Therefore, the grooves near the pixel area and the grooves near the marker area should be shallower than the deepest groove. Placing grooves with a depth greater than half the mask thickness closer to the center of the clearance area helps reduce the risk of pixel via tearing and also reduces the risk of groove tearing in the clearance area.

[0021] Therefore, the photomask of this application solves the problem of easy wrinkling of the pixel area during screen stretching by setting multiple grooves on the evaporation surface of the clearance area, and the grooves are deeper closer to the middle position of the marking area and the pixel area, and the depth of the deepest groove is greater than half the thickness of the photomask. Attached Figure Description

[0022] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0023] Figure 1 This is a top view schematic diagram of the area distribution of a photomask provided in this embodiment;

[0024] Figure 2 This is a magnified top view of the first type of clearance area of ​​a photomask provided in an embodiment of the present invention;

[0025] Figure 3 for Figure 2 The first cross-sectional view along the thickness direction of the photomask, A1-A2;

[0026] Figure 4 for Figure 2 The second cross-sectional view along the thickness direction of the mask, A1-A2;

[0027] Figure 5 This is a magnified top view of the second type of clearance area of ​​a photomask provided in an embodiment of the present invention;

[0028] Figure 6 for Figure 5 Cross-sectional view of B1-B2 along the thickness direction of the mask;

[0029] Figure 7 This is a magnified top view of a third type of clearance area of ​​a photomask provided in an embodiment of the present invention;

[0030] Figure 8 for Figure 7 Cross-sectional view of C1-C2 along the thickness direction of the mask.

[0031] Icons: 1-Pixel area; 2-Clear area; 3-Identifier area; 11-Pixel through hole; 21, 2101~2113-Groove; 31-Identifier through hole. Detailed Implementation

[0032] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0033] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0034] Those skilled in the art will understand that, unless specifically stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the term “comprising” as used in this specification means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof. The term “and / or” as used herein includes all or any units and all combinations of one or more associated listed items.

[0035] For the first aspect, please refer to Figures 1 to 6 This invention provides a photomask, comprising: a pixel area 1, a clearance area 2, and a marking area 3. The pixel area includes multiple pixel vias 11, the clearance area 2 surrounds the marking area 3, and the exterior of the clearance area 2 is surrounded by multiple pixel vias 11. The marking area 3 includes marking vias 31. The photomask includes a glass surface S1 and a vapor deposition surface S2 opposite to each other along the thickness direction. The vapor deposition surface of the clearance area 2 is provided with multiple grooves 21. The range of the average unit volume remaining percentage of the clearance area 2 is positively correlated with the average unit volume remaining percentage of the pixel area 1. When the distance between the center of the marking area 3 and the nearest pixel via 11 is less than or equal to 10 times the pixel pitch, the distance between the deepest groove and the center of the marking area 3 is greater than or equal to half the distance between the center of the marking area 3 and the nearest pixel via 11 and less than three-fifths of the distance between the center of the marking area 3 and the nearest pixel via 11. The depth of the deepest groove is greater than half the thickness of the photomask.

[0036] In this embodiment, multiple pixel vias 11 surround the clearance area 2, and the clearance area 2 surrounds the marking area 3. A groove 21 is provided on one side of the vapor deposition surface of the clearance area 2 to alleviate wrinkle formation. The average unit volume remaining percentage of the pixel area 1 refers to the ratio of the material volume remaining per cubic centimeter of the substrate after the pixel vias 11 are fabricated to the material volume before the pixel vias 11 are fabricated. The average unit volume remaining percentage of the clearance area 2 refers to the ratio of the material volume remaining per cubic centimeter of the substrate after the groove 21 is fabricated to the material volume before the groove 21 is fabricated. Since the size of the pixel vias 11 and the spacing between the pixel vias 11 may differ for each mask, for example… Figure 2 In the image, if the size of the through-hole 11 is the same but the pixel pitch D1 is different, a smaller pixel pitch D1 means that more material is etched away. Figure 2 The smaller the average remaining volume percentage per unit area of ​​pixel region 1, the more it will vary depending on the actual mask fabrication requirements. The change in the average remaining volume percentage per unit area of ​​pixel region 1 is crucial to its strength. To balance the stress changes between clearance area 2 and pixel region 1, the average remaining volume percentage per unit area of ​​clearance area 2 is related to the average remaining volume percentage per unit area of ​​pixel region 1. The larger the average remaining volume percentage per unit area of ​​pixel region 1, the more positively correlated the range of values ​​for the average remaining volume percentage per unit area of ​​clearance area 2 becomes with the average remaining volume percentage per unit area of ​​pixel region 1. Grooves designed according to these conditions can effectively eliminate pixel region wrinkles caused by stress mismatch between clearance area 2 and pixel region 1 during mesh stretching.

[0037] Meanwhile, a groove 21 is provided on the vapor deposition surface of the clearance area 2. The glass surface of the clearance area 2 is still a whole plane. During the vapor deposition, there will be electrostatic adsorption between the glass substrate and the mask. At this time, the weight of the clearance area 2 is reduced, which makes the glass substrate and the clearance area 2 fit better, making the markings prepared through the marking vias 31 more accurate. However, when separating the glass substrate and the mask in the future, because the clearance area 2 fits better with the glass substrate, the clearance area 2 may still be attached to the glass substrate after the pixel area 1 has been separated. Only after the clearance area 2 is separated from the glass substrate will the marking area 3 be separated. Therefore, the further the separation is towards the inside of the clearance area 2, the greater the force required to pull the pixel vias 11 around the clearance area 2 in order to overcome electrostatic adsorption, which may cause the pixel vias to tear or deform. To reduce the force exerted on the pixel vias 11 around the clearance area 2, when the distance D2 from the center of the marking area 3 to the nearest pixel via 11 is less than or equal to 10 times the pixel pitch D1, the distance between the deepest groove and the center of the marking area 3 is greater than or equal to half the distance between the center of the marking area 3 and the nearest pixel via 11 and less than or equal to three-fifths of the distance between the center of the marking area 3 and the nearest pixel via 11, and the depth of the deepest groove is greater than half the thickness of the mask, with the mask thickness direction being the Z direction.

[0038] Since the clearance area 2 surrounds the marking area 3, the lines connecting the recesses 21 can also form a circle surrounding the marking area. Figure 2 and Figure 5 In the case where the distance D2 from the center of the marking area 3 to the nearest pixel aperture 11 is less than or equal to 10 times the pixel pitch D1, if the groove in the clearance area 2 is an odd number of circles, for example... Figures 2 to 4 The deepest groove under the A1-A2 cutoff line is groove 2103, which is located at the midpoint of the distance between the center of the marking area 3 and the pixel area 1. That is, the distance between the deepest groove and the center of the marking area 3 is equal to half the distance between the center of the marking area 3 and the nearest pixel aperture 11. If the groove in the clearance area 2 is an even number of turns, for example... Figure 5 and Figure 6 The deepest groove under the B1-B2 section is groove 2106, which is located at the middle position of the distance between the center of the identification area 3 and the pixel area 1, closer to one side of the pixel area 1. That is, at this time, the distance between the deepest groove and the center of the identification area 3 is less than or equal to three-fifths of the distance between the center of the identification area 3 and the nearest pixel aperture 11.

[0039] Specifically, the grooves become deeper towards the midpoint between the marker area 3 and the pixel area 1, with the deepest groove exceeding half the thickness of the mask. This effectively creates a stress-relief area in the middle of the clearance area 2. The force overcoming electrostatic attraction reaches a small peak when separating in the middle of clearance area 2, and is then distributed by the deepest groove, making this area more easily deformable and a more effective stress-distributing region. Furthermore, since the deepest groove is flanked by shallower grooves, even if it deforms, the shallower grooves on either side provide a force transition and protection, ensuring the overall strength of the middle area of ​​clearance area 2 prevents the deepest groove from tearing. If only grooves of uniform depth were uniformly arranged, the force overcoming electrostatic attraction would still be transmitted to the pixel aperture due to the uniform stress throughout clearance area 2, still posing a risk of pixel aperture tearing. Meanwhile, since the clearance area 2 is not allowed to allow the vapor-deposited material to pass through, it is also necessary to avoid the edges of the clearance area 2 becoming weak due to excessive depth of the groove 21. Moreover, the edges are closer to the fragile pixel area 1, so not only is there a possibility of tearing of the pixel via 11, but also tearing of the groove 21 at the edge of the clearance area 2. Therefore, the depth of the grooves near the pixel area and the grooves near the marking area is less than the deepest groove. Placing the grooves with a depth greater than half the thickness of the mask closer to the center of the clearance area helps to reduce the risk of tearing of both the pixel via and the grooves in the clearance area.

[0040] Therefore, the mask of this application solves the problem of easy wrinkling of the pixel area during screen stretching by setting multiple grooves 21 on the evaporation surface of the clearance area 2, and the grooves are deeper the closer they are to the middle position of the marking area 3 and the pixel area 1, and the depth of the deepest groove is greater than half the thickness of the mask.

[0041] It should be noted that the identification via 31 is marked with a circle to distinguish it from the pixel via 11 for ease of understanding. The identification via 31 can be the same size and shape as the pixel via 11, or it can be different. If there is only one identification via 31, then the center of the identification area 3 is the center of the identification via 31. If there are multiple identification vias 31, then the center of the identification area 3 is the centroid of the area where the multiple identification vias 31 are located. Furthermore, the size and distribution of the groove 21 are not limited to the illustration in the figure, and there are other arrangements that meet the requirements. The dashed frame between the clearance area 2 and the identification area 3 in the figure is only for illustrating the division of the clearance area 2 and the identification area 3, and this dashed frame does not exist on the actual mask.

[0042] Optionally, the relationship between the average remaining unit volume percentage y of the clearance area 2 and the average remaining unit volume percentage x of the pixel area 1 is y = 0.5x + b, where b takes the value of 0.4 to 0.7. In this embodiment, taking the average remaining unit volume percentage of the pixel area 1 as 30% as an example, the average remaining unit volume percentage of the clearance area 2 then ranges from 55% to 85%.

[0043] Optionally, the remaining unit volume percentage of pixel area 1 is greater than or equal to 20% and less than or equal to 40%. In this embodiment, setting the groove 21 in the clearance area 2 is more important for masks where the average remaining unit volume percentage of pixel area 1 is greater than or equal to 20% and less than or equal to 40%, especially since the smaller the average remaining unit volume percentage of pixel area 1, the more prone pixel area 1 is to wrinkles. Taking an average remaining unit volume percentage of pixel area 1 of 20% as an example, the average remaining unit volume percentage of clearance area 2 will range from 50% to 80%; taking an average remaining unit volume percentage of pixel area 1 of 40% as an example, the average remaining unit volume percentage of clearance area 2 will range from 60% to 90%, and the range of the average remaining unit volume percentage of clearance area 2 varies with the average remaining unit volume percentage of pixel area 1.

[0044] Optionally, the depth of the other grooves gradually decreases from the deepest groove to pixel area 1, and from the deepest groove to identifier area 3. In this embodiment, see... Figure 2 and Figure 3 The deepest groove under the A1-A2 section is groove 2103. The depths of grooves 2102 and 2104 are less than the depth of groove 2103 but greater than the depths of grooves 2101 and 2105. This means that all grooves in groove circle Q3, where groove 2103 is located, are the deepest. Similarly, the depths of all grooves in groove circles Q2 (where groove 2102 is located) and Q4 (where groove 2104 is located) are less than the depth of groove circle Q3 but greater than the depths of all grooves in groove circles Q1 (where groove 2101 is located) and Q5 (where groove 2105 is located). This allows for a smoother transition of force within groove circle Q3, better preventing tearing of the area containing groove circle Q3. It should be noted that the dashed lines in the diagram are for illustrative purposes only and do not actually exist on the photomask.

[0045] Optionally, all grooves except the deepest one have the same depth. In this embodiment, Figure 2 and Figure 4The deepest groove under the A1-A2 section is groove 2103. Grooves 2101, 2102, 2104, and 2105 have the same depth, meaning that all grooves in groove ring Q3 are the deepest. All grooves in groove rings Q1, Q2, Q4, and Q5 have the same depth and are less than the depth of groove ring Q3. This reduces the increase in processes caused by making grooves of different depths, and also takes into account production efficiency while solving the tearing problem.

[0046] Optionally, the opening size of the groove 21 is less than or equal to the opening size of the pixel via 11. In this embodiment, Figure 6 The opening size E2 of the groove on the vapor deposition surface S2 is less than or equal to the opening size E1 of the pixel through hole. The groove with an opening size smaller than the opening size of the pixel through hole 11 is used, and the shape of the groove 21 on the vapor deposition surface is the same as the shape of the pixel through hole 11. Using multiple grooves 21 as one side of the groove ring can make the stress of the entire clearance area 2 transition more smoothly than using a long groove as one side of the groove ring.

[0047] Optionally, the distance F1 between the groove of adjacent pixel region 1 and the pixel region is greater than or equal to the pixel pitch D1 and less than or equal to 2.5 times the pixel pitch D1. In this embodiment, please refer to... Figure 2 All grooves included in the groove ring Q1 are grooves adjacent to pixel area 1. The distance F1 between a groove adjacent to pixel area 1 and pixel area 1 refers to the position from the center point of the groove to the boundary line where the pixel via is located. F1 is parallel to the X-axis or parallel to the Y-axis. F1 needs to be greater than or equal to the pixel pitch D1 and less than or equal to 2.5 times the pixel pitch D1 to ensure that the stress between the groove and pixel area 1 can be smoothly transitioned. If F1 is less than the pixel pitch D1, it may damage the strength of the pixel via itself. If it is greater than 2.5 times the pixel pitch D1, then the groove may not be able to play its role in balancing stress.

[0048] Optionally, the distance F2 between the groove adjacent to the identification area 3 and the identification through-hole 31 is greater than or equal to the pixel pitch D1 and less than or equal to 2.5 times the pixel pitch D1. This applies regardless of whether there is only one identification through-hole 31, for example... Figure 7 Select the distance between the grooves closest to the marking through hole 31; or if there are multiple marking through holes 31, for example... Figure 2 All the grooves included in the groove ring Q5 are grooves adjacent to the marking area 3. The distance F2 between the grooves closest to any marking through hole 31 must be greater than or equal to the pixel pitch D1 and less than or equal to 2.5 times the pixel pitch D1. If F2 is less than the pixel pitch D1, it may damage the strength of the marking through hole 31 itself. If it is greater than 2.5 times the pixel pitch D1, then the groove may have difficulty playing the role of balancing the stress between the clearance area 2 and the marking area 3.

[0049] Optionally, when the distance from the center of the marking area 3 to the nearest pixel aperture 11 is greater than 10 times the pixel pitch, the clearance area 2 includes at least two deepest grooves, and the distance between the two deepest grooves is greater than or equal to twice the pixel pitch D1. In this embodiment, please refer to... Figure 7 and Figure 8 In the process, when the distance D2 from the center of the marking area 3 to the nearest pixel aperture 11 is greater than 10 times the pixel pitch D1, at least two deep groove rings need to be set in the clearance area. For example, the groove rings containing grooves 2108 and 2112 under the C1-C2 section are the two deepest groove rings. The distance G1 between these two groove rings needs to be greater than or equal to 2 times the pixel pitch D1. When the clearance area 2 is relatively large, the force to overcome electrostatic adsorption is distributed and unloaded by the deepest groove ring in the clearance area 2. If the force to overcome electrostatic adsorption needs to be increased, there is another area containing the deepest groove ring for unloading, ensuring the unloading effect.

[0050] Optionally, the depth of the groove between the two deepest grooves is less than the depth of the deepest groove. In this embodiment, please refer to... Figure 7 and Figure 8 The groove rings containing grooves 2108 and 2112 are the two deepest groove rings, and the groove rings containing grooves 2109, 2110, and 2111 are the groove rings between the two deepest groove rings. The depths of grooves 2109, 2110, and 2111 are also less than the depths of grooves 2108 and 2112.

[0051] Preferably, if there are at least two concentric ... Figure 7 and Figure 8 The deepest grooves 2108 and 2112 are located within three additional groove rings containing grooves 2109, 2110, and 2111, and all grooves within these three groove rings have the same depth. Specifically, the number of groove rings between the two deepest grooves should be adjusted according to actual needs.

[0052] Optionally, the deepest groove has a first depth, and the clearance area between the deepest groove adjacent to the pixel area and the pixel area includes grooves with a depth less than the first depth; the clearance area between the deepest groove and the marker area also includes grooves with a depth less than the first depth. In this embodiment, please continue to refer to... Figure 7 and Figure 8The groove ring containing groove 2107 is located between the groove ring containing groove 2108 and pixel area 1, and the depth of groove 2107 is less than the depth of groove 2108; the groove ring containing groove 2113 is located between the groove ring containing groove 2112 and marking area 3, and the depth of groove 2107 is less than the depth of groove 2108. This is to avoid the edge of clearance area 2 becoming weak due to excessive groove depth, and to prevent the groove of clearance area 2 edge from tearing.

[0053] Those skilled in the art will understand that the steps, measures, and schemes in the various operations, methods, and processes discussed in this invention can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and schemes in the various operations, methods, and processes discussed in this invention can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and schemes in the prior art that are similar to those disclosed in this invention can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0054] In the description of this invention, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0055] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0056] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0057] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0058] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A mask, characterized in that, The mask plate comprises a glass surface and an evaporation surface opposite in the thickness direction, the evaporation surface of the clearance area is provided with a plurality of grooves, and the average unit volume residual proportion of the clearance area is positively correlated with the average unit volume residual proportion of the pixel area. When the distance from the center of the identification area to the nearest pixel via hole is less than or equal to 10 times the pixel pitch, the distance between the deepest groove and the center of the identification area is greater than or equal to half of the distance from the center of the identification area to the nearest pixel via hole and less than or equal to three fifths of the distance from the center of the identification area to the nearest pixel via hole; the depth of the deepest groove is greater than half of the thickness of the mask plate. The average unit volume residual proportion of the clearance area is equal to the product of the average unit volume residual proportion of the pixel area and a first parameter plus a second parameter, wherein the first parameter is 0.5, and the value range of the second parameter is 0.4-0.

7. The average unit volume residual proportion of the pixel area is greater than or equal to 20% and less than or equal to 40%.

2. The mask according to claim 1, wherein, The depths of other grooves gradually decrease from the deepest groove to the pixel area and from the deepest groove to the identification area.

3. The mask according to claim 2, wherein, The opening size of the groove is less than or equal to the opening size of the pixel via hole.

4. The mask of claim 1, wherein, The distance between the groove adjacent to the pixel area and the pixel area is greater than or equal to the pixel pitch and less than or equal to 2.5 times the pixel pitch.

5. The mask of claim 1, wherein, The distance between the groove adjacent to the identification area and the identification via hole is greater than or equal to the pixel pitch and less than or equal to 2.5 times the pixel pitch.

6. The mask of claim 1, wherein, When the distance from the center of the identification area to the nearest pixel via hole is greater than 10 times the pixel pitch, the clearance area comprises at least two circles of the deepest grooves, and the distance between the two circles of the deepest grooves is greater than or equal to 2 times the pixel pitch.

7. The mask of claim 1, wherein, The depths of the grooves between the two circles of the deepest grooves are less than the deepest groove.

8. The mask of claim 1, wherein, The depth of the deepest groove is a first depth, the clearance area between the deepest groove adjacent to the pixel area and the pixel area comprises a groove with a depth less than the first depth; the clearance area between the deepest groove and the identification area comprises a groove with a depth less than the first depth.

9. The mask according to claim 8, wherein, ​ 10. The mask of claim 8, wherein, ​

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