Tungsten / rhenium dispersion strengthened copper alloy and preparation method thereof

Abstract

The invention relates to a tungsten / rhenium dispersion strengthened copper alloy and a preparation method thereof, and belongs to the technical field of metal-based composite materials. The tungsten / rhenium dispersion strengthened copper alloy is a copper matrix containing tungsten and rhenium metal particles, and in the tungsten / rhenium dispersion strengthened copper alloy, the average distribution density of the tungsten and / or rhenium metal particles is 7-34 / mu m < 3 >. The multi-layer arranged copper-tungsten-rhenium hierarchical metal precursor is prepared by controlling an electroplating process, and uniform distribution of tungsten and rhenium in a copper matrix is ensured. After rapid plasma sintering, the second phases of tungsten and rhenium in the copper matrix are nano-sized particles. The conductivity of the tungsten / rhenium dispersion strengthened copper alloy can reach 90.1% IACS-98.2% IACS, the tensile strength can reach 578-610 MPa, and the material performance is superior to that of an existing doped dispersion strengthened copper alloy. The used raw materials are wide in source, and the preparation process is environment-friendly and conforms to the policy of green sustainable development.

Description

Technical Field

[0001] This invention relates to the field of metal matrix composites technology, and in particular to a tungsten / rhenium dispersion-strengthened copper alloy and its preparation method. Background Technology

[0002] Dispersion-strength copper alloys are high-performance metallic materials prepared using copper as a matrix and strengthened through dispersion reinforcement with nanoscale compounds (such as Al2O3). They possess high strength, high conductivity, and excellent high-temperature stability. The essence of dispersion strengthening is the strengthening mechanism achieved by pinning dislocations through second-phase particles. Typical performance indicators include conductivity, tensile strength, and softening temperature. This material has been applied in important industrial fields such as resistance welding electrodes, integrated circuit lead frames, and vacuum switch contacts.

[0003] Chinese patent CN119772182A discloses a dispersion-strengthened copper alloy preparation system and method, which prepares uniformly composed copper alloy powder through long-term grinding, thereby ensuring the uniformity of alloy properties. Chinese patent CN119332127A discloses a method for preparing a high-strength, high-conductivity, high-temperature resistant powder metallurgy copper-iron alloy, which obtains uniformly composed copper alloy powder through atomization and ball milling, and then obtains the copper alloy through pressing and sintering. In the above methods for preparing dispersion-strengthened copper alloys, on the one hand, controlling the dispersion of the second phase in the copper alloy through a long grinding process is not only very complex, but the particle size of the second phase is basically at the micrometer level or even larger, greatly reducing the effect of dispersed ultrafine particles in hindering dislocation movement and improving alloy properties. On the other hand, existing dispersion strengthening processes mainly rely on empirical operating procedures to disperse the second phase, lacking theoretical support for the size and dispersion degree of the second phase. This leads to the presence of large-sized second-phase particles in actual preparation, or poor dispersion due to unsuitable heating temperatures, resulting in significant product waste. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a tungsten / rhenium dispersion-strengthened copper alloy and its preparation method.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] In a first aspect, the present invention provides a tungsten / rhenium dispersion-strengthened copper alloy, wherein the tungsten / rhenium dispersion-strengthened copper alloy is a copper matrix containing tungsten and rhenium metal particles, and the average distribution density of tungsten and / or rhenium metal particles in the tungsten / rhenium dispersion-strengthened copper alloy is 7 to 34 particles / μm. 3 .

[0007] The tungsten / rhenium dispersion-strengthened copper alloy prepared by this invention has tungsten and rhenium particles uniformly distributed in a copper matrix. The tungsten or rhenium second phase in the copper matrix consists of nano-sized particles, which are only one-hundredth the size of ordinary micron-sized oxide particles in the second phase. This gives it a stronger dispersion strengthening effect at the microscopic level and superior electrical conductivity and tensile strength at the macroscopic level compared to existing dispersion-strengthened copper alloys. It is significantly superior to existing doped dispersion-strengthened copper alloy materials.

[0008] In a preferred embodiment of the present invention, the tungsten and rhenium metal particles are uniformly distributed in the copper matrix, and the average distribution density of tungsten and / or rhenium metal particles in the tungsten / rhenium dispersion-strengthened copper alloy is 7.26–33.2 particles / μm. 3 Its electrical conductivity is 90.1% IACS to 98.2% IACS, and its tensile strength is 578 to 610 MPa.

[0009] Furthermore, in the tungsten / rhenium dispersion-strengthened copper alloy, the average distribution density of tungsten and / or rhenium metal particles is 3–10 particles / μm. 3 7.26 particles / μm is preferred. 3 The preferred electrical conductivity is 98.2% IACS, and the tensile strength is 610 MPa.

[0010] Secondly, the present invention provides a method for preparing the tungsten / rhenium dispersion-strengthened copper alloy, comprising the following steps:

[0011] S1: Electroplating is performed on the surface of the cathode plate to form a copper plating layer. After cleaning, a plate with an electroplated copper plating layer is obtained.

[0012] S2: Electroplating is performed on the copper plating layer of the board material in step S1 to form tungsten plating layer and rhenium plating layer respectively on the copper plating layer. After cleaning, a board material with copper, tungsten and rhenium plating layers is obtained.

[0013] S3: On the plated material with copper, tungsten and rhenium plating in step S3, repeat the electroplating method of steps S1 and S2 in sequence to obtain a copper-tungsten-rhenium layered metal precursor.

[0014] S4: Plasma sintering of the copper-tungsten-rhenium layered metal precursor in step S4 to obtain the tungsten / rhenium dispersion-strengthened copper alloy.

[0015] The method of the present invention can prepare a uniform multilayer copper-tungsten-rhenium layered metal precursor through electroplating, which ensures the uniform distribution of tungsten and rhenium in the copper matrix during the subsequent sintering process.

[0016] In a preferred embodiment of the present invention, in steps S1 and S2, the ratio of the thickness of the copper plating layer to the thickness of the tungsten or rhenium plating layer is: copper plating layer : tungsten or rhenium plating layer = (20-40) : 1.

[0017] Preferably, the ratio of the thickness of the copper plating layer to the thickness of the tungsten plating layer is: copper plating layer: tungsten plating layer = 20: 1; the ratio of the thickness of the copper plating layer to the thickness of the rhenium plating layer is: copper plating layer: rhenium plating layer = 20: 1.

[0018] In a preferred embodiment of the present invention, in step S1, the thickness of the copper plating layer is 15–45 μm.

[0019] Preferably, the thickness of the copper plating layer is one of 15, 20, 25, 30, 35, 40, 45 μm or any value between two of them.

[0020] Furthermore, the thickness of the copper plating layer is 20–40 μm.

[0021] Most preferably, the copper plating thickness is 40 μm.

[0022] In a preferred embodiment of the present invention, in step S2, the thickness of the tungsten or rhenium coating is 0.5 to 5 μm.

[0023] Preferably, the thickness of the tungsten or rhenium coating is one of 0.5, 0.7, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 5 μm or any value between two of them.

[0024] Furthermore, the thickness of the tungsten or rhenium coating is 0.7–2 μm.

[0025] Most preferably, the tungsten coating thickness is 2 μm and the rhenium coating thickness is 2 μm.

[0026] In a preferred embodiment of the present invention, in steps S1 and S2, the main salt of the electroplating solution for forming the copper plating layer includes at least one of copper sulfate, cuprous cyanide and copper pyrophosphate.

[0027] And / or, the main salt of the electroplating solution used to form the tungsten coating includes at least one of tungsten chloride, ammonium paratungstate, ammonium metatungstate, and sodium tungstate;

[0028] And / or, the main salt of the electroplating solution for forming the rhenium plating layer includes at least one of rhenium chloride, perrhenic acid, ammonium rhenium, sodium rhenium, and potassium rhenium.

[0029] Preferably, the main salt of the electroplating solution for forming a copper plating layer is copper sulfate; the main salt of the electroplating solution for forming a tungsten plating layer is tungsten chloride; and the main salt of the electroplating solution for forming a rhenium plating layer is rhenium chloride.

[0030] Furthermore, the concentration of the main salt in the electroplating solution for forming the copper plating layer is 0.5–2 mol / L, preferably 2 mol / L.

[0031] Furthermore, the concentration of the main salt in the electroplating solution for forming the tungsten coating is 0.5–2 mol / L, preferably 1 mol / L.

[0032] Furthermore, the main salt concentration of the electroplating solution for forming the rhenium plating layer is 0.5–2 mol / L, preferably 1 mol / L.

[0033] Furthermore, the electroplating solution used to form the copper plating layer also contains sulfuric acid and polyethylene glycol.

[0034] Preferably, the sulfuric acid concentration is 30–70 g / L, and the polyethylene glycol concentration is 0.5 wt.%–2 wt.%.

[0035] More preferably, the sulfuric acid concentration is 50 g / L and the polyethylene glycol concentration is 1 wt.%.

[0036] Furthermore, the electroplating solution used to form the tungsten coating also contains citric acid, boric acid, and sodium saccharin.

[0037] Preferably, the concentration of citric acid is 0.2–0.5 mol / L, the concentration of boric acid is 0.05–0.2 mol / L, and the concentration of sodium saccharin is 8–15 g / L.

[0038] More preferably, the concentration of citric acid is 0.5 mol / L, the concentration of boric acid is 0.1 mol / L, and the concentration of sodium saccharin is 15 g / L.

[0039] Furthermore, the plating solution used to form the rhenium plating layer also contains citric acid, boric acid, and sodium dodecyl sulfate.

[0040] Preferably, the concentration of citric acid is 0.2–0.5 mol / L, the concentration of boric acid is 0.05–0.2 mol / L, and the concentration of sodium dodecyl sulfate is 8–15 g / L.

[0041] More preferably, the concentration of citric acid is 0.5 mol / L, the concentration of boric acid is 0.1 mol / L, and the concentration of sodium dodecyl sulfate is 15 g / L.

[0042] In a preferred embodiment of the present invention, in step S1, the cathode plate material includes at least one of titanium, nickel, and iron.

[0043] Preferably, in step S1, the cathode plate material is titanium.

[0044] In a preferred embodiment of the present invention, in step S1, the cathode plate has a size of 1 to 10 μm. 2 10m is preferred 2 .

[0045] In a preferred embodiment of the present invention, in steps S1 and S2, the electroplating current is 1 to 20 A and the electroplating time is 5 to 30 seconds.

[0046] The magnitude of the electroplating current is related to the quality of the plating layer. If the electroplating current is too large, it will cause the plating metal to peel off, detach, or even have uneven thickness, reducing the final dispersion of tungsten and rhenium in the copper substrate.

[0047] In a preferred embodiment of the present invention, in steps S1 and S2, the cleaning method includes at least one of ultrasonic cleaning, countercurrent cleaning and vibration cleaning, with ultrasonic cleaning being preferred.

[0048] In a preferred embodiment of the present invention, in step S2, electroplating is performed on the copper plating layer of the board material in step S1 to form a tungsten plating layer on the copper plating layer, and then the board material is cleaned to obtain a board material with electroplated copper and tungsten plating layers; then electroplating is performed on the tungsten plating layer of the board material with electroplated copper and tungsten plating layers to form a rhenium plating layer on the tungsten plating layer, and then the board material is cleaned to obtain a board material with electroplated copper, tungsten and rhenium plating layers.

[0049] In a preferred embodiment of the present invention, in step S3, the number of electroplating cycles is 500 to 1000. Preferably, it is 500 cycles.

[0050] In a preferred embodiment of the present invention, in step S4, the plasma sintering temperature is 800-900°C and the time is 10-30 min.

[0051] Preferably, the plasma sintering temperature is 800℃ and the time is 20min.

[0052] In a preferred embodiment of the present invention, in step S4, plasma sintering is performed under inert gas conditions.

[0053] Preferably, the inert gas includes nitrogen and / or argon.

[0054] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0055] (1) This invention achieves uniform layering of additives (tungsten and rhenium) at the micron scale by controlling the electroplating process to prepare a multilayer copper-tungsten-rhenium layered metal precursor. This ensures the uniform distribution of tungsten and rhenium in the copper matrix during the subsequent sintering process, greatly avoiding the unevenness of the traditional melting and mixing process. At the same time, it is far superior to the precursor composite metal powder prepared by the existing ball milling mixing process, which can only disperse additives at the scale of hundreds of micrometers or millimeters.

[0056] (2) The copper-tungsten-rhenium layered metal precursor obtained in this invention, after rapid plasma sintering, has tungsten and rhenium second phase particles in the copper matrix that are nano-sized, much smaller than the particle size of the second phase of existing tungsten, rhenium and other doped dispersion-strengthened copper alloys.

[0057] (3) The present invention controls the thickness of the tungsten or rhenium plating layer through electroplating process, and further controls the average distribution density of tungsten and rhenium particles in the copper matrix to 3 to 10 particles / μm by combining the sintering temperature. 3 The electrical conductivity of tungsten / rhenium dispersion-strengthened copper alloys can reach 90.1% IACS to 98.2% IACS, and the tensile strength can reach 578 to 610 MPa. The material properties are significantly better than those of existing doped dispersion-strengthened copper alloy materials.

[0058] (4) The raw materials used in the preparation method of the tungsten / rhenium dispersion strengthened copper alloy of the present invention are widely available, and the preparation process is environmentally friendly and in line with the policy of green and sustainable development. Attached Figure Description

[0059] Figure 1 The TEM results are for the tungsten / rhenium dispersion-strengthened copper alloy in Example 1.

[0060] Figure 2 The SEM results are for the cross-section of the tungsten / rhenium dispersion-strengthened copper alloy in Comparative Example 4. Detailed Implementation

[0061] To better illustrate the purpose, technical solution, and advantages of this invention, the invention will be further described below with reference to specific embodiments. Unless otherwise specified, other materials and reagents used in the embodiments are commercially available.

[0062] Example 1

[0063] This embodiment provides a method for preparing a tungsten / rhenium dispersion-strengthened copper alloy, the steps of which are as follows:

[0064] (1) With 1m 2 A titanium plate was used as the cathode. A single electroplating process was performed on the titanium plate to form a 40 μm thick copper coating. The plate was then ultrasonically cleaned with pure water to obtain the copper-plated titanium plate. The electroplating solution for the first electroplating step contained 2 mol / L copper sulfate (main salt), 50 g / L sulfuric acid, and 1 wt.% polyethylene glycol, with water as the solvent. The single electroplating current was 5 A, and the time was 30 s.

[0065] (2) A second electroplating process is performed on the copper plating layer of the titanium plate from step (1) to form a 2 μm thick tungsten plating layer on the copper plating layer. The plate is then ultrasonically cleaned with pure water to obtain a titanium plate with both copper and tungsten plating layers. The electroplating solution for the second electroplating contains 1 mol / L tungsten chloride (main salt), 0.5 mol / L citric acid (complexing agent), 0.1 mol / L boric acid (buffer), and 15 g / L sodium saccharin (additive), with water as the solvent. The second electroplating current is 5 A, and the time is 5 s.

[0066] (3) The titanium plate with copper and tungsten plating in step (2) is subjected to three electroplating processes on the tungsten plating layer to form a rhenium plating layer with a thickness of 2 μm. The plate is then ultrasonically cleaned with pure water to obtain a titanium plate with copper, tungsten, and rhenium plating layers. The electroplating solution for the three electroplating processes contains 1 mol / L rhenium chloride (main salt), 0.2 mol / L citric acid (complexing agent), 0.1 mol / L boric acid (buffer), and 10 g / L sodium dodecyl sulfate (wetting agent), with water as the solvent. The electroplating current for each electroplating process is 5 A, and the time is 5 s.

[0067] (4) On the rhenium plating layer of the titanium plate electroplated with copper, tungsten and rhenium in step (3), electroplating is continued, and the electroplating method of steps (1) to (3) is repeated 500 times to obtain a micron-level copper-tungsten-rhenium layered metal precursor with copper, tungsten and rhenium plating layers arranged in sequence. The thickness of each plating layer is tested according to GB / T 4956-2003.

[0068] (5) The micron-scale copper-tungsten-rhenium layered metal precursor from step (4) is plasma-sintered at 800°C under an argon atmosphere for 20 min to obtain a nano-scale tungsten / rhenium dispersion-strengthened copper alloy.

[0069] Example 2

[0070] This embodiment provides a method for strengthening copper alloys with tungsten / rhenium dispersion, the steps of which are as follows:

[0071] (1) With 5m 2 A titanium plate was used as the cathode. A single electroplating process was performed on the titanium plate to form a 30 μm thick copper coating. The plate was then ultrasonically cleaned with pure water to obtain the copper-plated titanium plate. The electroplating solution for the first electroplating step contained 2 mol / L copper sulfate (main salt), 50 g / L sulfuric acid, and 1 wt.% polyethylene glycol, with water as the solvent. The single electroplating current was 20 A, and the time was 15 s.

[0072] (2) A second electroplating process is performed on the copper plating layer of the titanium plate from step (1) to form a tungsten plating layer with a thickness of 1 μm on the copper plating layer. The plate is then ultrasonically cleaned with pure water to obtain a titanium plate with both copper and tungsten plating layers. The electroplating solution for the second electroplating contains 2 mol / L tungsten chloride (main salt), 0.5 mol / L citric acid (complexing agent), 0.1 mol / L boric acid (buffer), and 15 g / L sodium saccharin (additive), with water as the solvent. The second electroplating current is 10 A, and the time is 10 s.

[0073] (3) The titanium plate with copper and tungsten plating in step (2) is subjected to three electroplating processes to form a rhenium plating layer with a thickness of 1 μm on the tungsten plating layer. The plate is then ultrasonically cleaned with pure water to obtain a titanium plate with copper, tungsten, and rhenium plating layers. The electroplating solution for the three electroplating processes contains 2 mol / L rhenium chloride (main salt), 0.2 mol / L citric acid (complexing agent), 0.1 mol / L boric acid (buffer), and 10 g / L sodium dodecyl sulfate (wetting agent), with water as the solvent. The electroplating current for each electroplating process is 10 A, and the time is 10 s.

[0074] (4) On the rhenium plating layer of the titanium plate electroplated with copper, tungsten and rhenium in step (3), continue electroplating and repeat the electroplating method of steps (1) to (3) for 500 cycles to obtain a micron-scale copper-tungsten-rhenium layer metal precursor with copper, tungsten and rhenium plating layers arranged in sequence.

[0075] (5) The micron-scale copper-tungsten-rhenium layered metal precursor from step (4) is plasma-sintered at 800°C under a nitrogen atmosphere for 20 min to obtain a nano-scale tungsten / rhenium dispersion-strengthened copper alloy.

[0076] Example 3

[0077] This embodiment provides a method for strengthening copper alloys with tungsten / rhenium dispersion, the steps of which are as follows:

[0078] (1) With 5m 2 A titanium plate is used as the cathode plate. A single electroplating process is performed on the titanium plate to form a 20 μm thick copper coating. The plate is then ultrasonically cleaned with pure water to obtain the copper-plated titanium plate. The electroplating solution for the first electroplating step contains 1 mol / L copper sulfate (main salt), 50 g / L sulfuric acid, and 1 wt.% polyethylene glycol, with water as the solvent. The single electroplating current is 10 A, and the time is 20 s.

[0079] (2) A second electroplating process is performed on the copper plating layer of the titanium plate from step (1) to form a tungsten plating layer with a thickness of 0.7 μm on the copper plating layer. The plate is then ultrasonically cleaned with pure water to obtain a titanium plate with both copper and tungsten plating layers. The electroplating solution for the second electroplating contains 0.5 mol / L tungsten chloride (main salt), 0.5 mol / L citric acid (complexing agent), 0.1 mol / L boric acid (buffer), and 15 g / L sodium saccharin (additive), with water as the solvent. The second electroplating current is 10 A, and the time is 5 s.

[0080] (3) The titanium plate with copper and tungsten plating in step (2) is subjected to three electroplating processes to form a rhenium plating layer with a thickness of 0.7 μm on the tungsten plating layer. The plate is then ultrasonically cleaned with pure water to obtain a titanium plate with copper, tungsten, and rhenium plating layers. The electroplating solution for the three electroplating processes contains 0.5 mol / L rhenium chloride (main salt), 0.2 mol / L citric acid (complexing agent), 0.1 mol / L boric acid (buffer), and 10 g / L sodium dodecyl sulfate (wetting agent), with water as the solvent. The electroplating current for each electroplating process is 10 A, and the time is 5 s.

[0081] (4) On the rhenium plating layer of the titanium plate electroplated with copper, tungsten and rhenium in step (3), continue electroplating and repeat the electroplating method of steps (1) to (3) for 500 cycles to obtain a micron-scale copper-tungsten-rhenium layer metal precursor with copper, tungsten and rhenium plating layers arranged in sequence.

[0082] (5) The micron-scale copper-tungsten-rhenium layered metal precursor from step (4) is plasma-sintered at 800°C under an argon atmosphere for 20 min to obtain a nano-scale tungsten / rhenium dispersion-strengthened copper alloy.

[0083] Example 4

[0084] This embodiment provides a method for strengthening copper alloys with tungsten / rhenium dispersion. The only difference from Embodiment 3 is that the electroplating solution of the second electroplating is replaced with the electroplating solution of the third electroplating, so that a rhenium coating is formed on the copper coating first, and then a tungsten coating is formed.

[0085] Example 5

[0086] This embodiment provides a method for strengthening copper alloys with tungsten / rhenium dispersion, which differs from Embodiment 3 only in that: 1000 cyclic electroplating cycles are performed.

[0087] Example 6

[0088] This embodiment provides a method for strengthening copper alloys with tungsten / rhenium dispersion, which differs from Embodiment 3 only in that the plasma sintering temperature is 900℃.

[0089] Comparative Example 1

[0090] This comparative example provides a method for strengthening copper alloys with tungsten / rhenium dispersion, which differs from Example 3 only in that the copper plating thickness is 5 μm.

[0091] Comparative Example 2

[0092] This comparative example provides a method for preparing a tungsten / rhenium dispersion-strengthened copper alloy. The only difference between this comparative example's tungsten / rhenium dispersion-strengthened copper alloy preparation method and Example 3 is that the thickness of the tungsten coating in a single electroplating is 10 μm.

[0093] Comparative Example 3

[0094] This comparative example provides a method for strengthening copper alloys with tungsten / rhenium dispersion, which differs from Example 3 only in that the plasma sintering temperature is 700°C.

[0095] Comparative Example 4

[0096] This comparative example provides a method for strengthening copper alloys with tungsten / rhenium dispersion, which differs from Example 3 only in that the current is 25A.

[0097] Comparative Example 5

[0098] This comparative example provides a method for strengthening copper alloys with tungsten / rhenium dispersion, which differs from Example 3 only in that: 400 cycles of electroplating are performed.

[0099] Test Example 1

[0100] I. Testing Methods

[0101] 1. Take a 1cm×1cm×1cm tungsten / rhenium dispersion-strengthened copper alloy sample, grind and polish its surface, and then place it under a scanning electron microscope (SEM) at 1000x magnification to observe its energy dispersive spectroscopy (EDS) image. Take 5μm×5μm areas from the front, side, and top surfaces of the sample, and count the number of tungsten and rhenium particles. (Number from the front) × (Number from the side) × (Number from the top) / 125μm 3 = Actual distribution density.

[0102] 2. The electrical conductivity of the dispersed copper alloy was tested according to GB / T 32791-2016 standard.

[0103] 3. The tensile strength of the dispersion copper alloy was tested according to GB / T 228-2002 standard.

[0104] 4. Test the coating thickness according to GB / T 4956-2003 standard.

[0105] II. Test Results

[0106] Table 1

[0107]

[0108] As can be seen from the experimental data in Table 1, the tungsten / rhenium dispersion-strengthened copper alloys prepared in Examples 1 to 4 of this invention have electrical conductivity of 90.1% IACS to 98.2% IACS, with a maximum of 98.2% IACS, and room temperature tensile strength of 578 MPa to 610 MPa, with a maximum of 610 MPa, which is significantly better than the doped dispersion-strengthened copper alloy materials reported in the past. Figure 1 The transmission electron microscope results are for the tungsten / rhenium dispersion-strengthened copper alloy prepared in Example 1.

[0109] Comparing Examples 3 and 4, it can be seen that changing the electroplating order of tungsten and rhenium has little impact on the performance of tungsten / rhenium dispersion-strengthened copper alloy.

[0110] Comparing Examples 1-3 with Comparative Examples 1 and 2, it can be seen that when the ratio of tungsten or rhenium plating thickness to copper plating thickness does not meet the ratio of 1:(20-40), the particle distribution density of tungsten and rhenium is too small or too large, and the electrical conductivity and tensile strength of the tungsten / rhenium dispersion-strengthened copper alloy decrease sharply.

[0111] Comparing Examples 1-6 with Comparative Example 3, it can be seen that when the sintering temperature is not in the range of 800-900°C, tungsten or rhenium is difficult to form uniformly distributed particles in the copper substrate, which leads to a sharp decrease in the electrical conductivity and tensile strength of the tungsten / rhenium dispersion-strengthened copper alloy.

[0112] Comparing Examples 1-6 with Comparative Example 4, it can be seen that when the electroplating current is 25A, the copper, tungsten, and rhenium plating layers separate during the electroplating process, making it impossible to prepare a high-performance tungsten / rhenium dispersion-strengthened copper alloy. Figure 2 ).

[0113] Comparing Examples 1-6 with Comparative Example 5, it can be seen that when the number of cyclic electroplating cycles is less than 500, the electrical conductivity and tensile strength of the prepared tungsten / rhenium dispersion-strengthened copper alloy decrease.

[0114] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the essence and scope of the technical solutions of the present invention.

Claims

1. A tungsten / rhenium dispersion-strengthened copper alloy, characterized in that, The tungsten / rhenium dispersion-strengthened copper alloy is a copper matrix containing tungsten and rhenium metal particles. The average distribution density of tungsten and / or rhenium metal particles in the tungsten / rhenium dispersion-strengthened copper alloy is 7–34 particles / μm. 3 .

2. The method for preparing the tungsten / rhenium dispersion-strengthened copper alloy according to claim 1, characterized in that, Includes the following steps: S1: Electroplating is performed on the surface of the cathode plate to form a copper plating layer. After cleaning, a plate with an electroplated copper plating layer is obtained. S2: Electroplating is performed on the copper plating layer of the board material in step S1 to form tungsten plating layer and rhenium plating layer respectively on the copper plating layer. After cleaning, a board material with copper, tungsten and rhenium plating layers is obtained. S3: On the plated material with copper, tungsten and rhenium plating in step S3, repeat the electroplating method of steps S1 and S2 in sequence to obtain a copper-tungsten-rhenium layered metal precursor. S4: Plasma sintering of the copper-tungsten-rhenium layered metal precursor in step S4 to obtain the tungsten / rhenium dispersion-strengthened copper alloy.

3. The preparation method according to claim 2, characterized in that, In steps S1 and S2, the ratio of the thickness of the copper plating layer to that of the tungsten or rhenium plating layer is: copper plating layer : tungsten or rhenium plating layer = (20~40) :

1.

4. The preparation method according to claim 2, characterized in that, In step S1, the thickness of the copper plating layer is 15–45 μm.

5. The preparation method according to claim 2, characterized in that, In step S2, the thickness of the tungsten or rhenium coating is 0.5 to 5 μm.

6. The preparation method according to claim 2, characterized in that, In steps S1 and S2, the main salt of the electroplating solution used to form the copper plating layer includes at least one of copper sulfate, cuprous cyanide, and copper pyrophosphate. And / or, the main salt of the electroplating solution used to form the tungsten coating includes at least one of tungsten chloride, ammonium paratungstate, ammonium metatungstate, and sodium tungstate; And / or, the main salt of the electroplating solution for forming the rhenium plating layer includes at least one of rhenium chloride, perrhenic acid, ammonium rhenium, sodium rhenium, and potassium rhenium.

7. The preparation method according to claim 2, characterized in that, In steps S1 and S2, the electroplating current is 1 to 20 A and the electroplating time is 5 to 30 seconds.

8. The preparation method according to claim 2, characterized in that, In step S2, electroplating is performed on the copper plating layer of the board material in step S1 to form a tungsten plating layer on the copper plating layer. After cleaning, a board material with electroplated copper and tungsten plating layers is obtained. Then, electroplating is performed on the tungsten plating layer of the board material with electroplated copper and tungsten plating layers to form a rhenium plating layer on the tungsten plating layer. After cleaning, a board material with electroplated copper, tungsten and rhenium plating layers is obtained.

9. The preparation method according to claim 2, characterized in that, In step S3, the number of electroplating cycles is 500 to 1000.

10. The preparation method according to claim 2, characterized in that, In step S4, the plasma sintering temperature is 800–900℃ and the time is 10–30 min.

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