Detector adjusting method for electron beam detection equipment and related product

Abstract

The invention provides a detector adjusting method for electron beam detection equipment and a related product. The adjusting method comprises the following steps: acquiring a detection parameter electron beam control parameter of the electron beam detection equipment, wherein the detection parameter electron beam control parameter is used for adjusting a beam spot diaphragm hole parameter and / or a beam condenser parameter of an electron beam of the electron beam detection equipment; and determining a target detector gain corresponding to the detection parameter electron beam control parameter by using a pre-established gain model, wherein the gain model is used for describing a corresponding relationship between the detection parameter electron beam control parameter of the electron beam detection equipment and the ideal gain of the detector. According to the adjusting method, the gain of the detector is automatically adjusted according to the application scene of the electron beam detection equipment, and the purpose of improving the semiconductor detection efficiency and accuracy is achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor detection, and in particular to a probe adjustment method for an electron beam detection device, a computer readable storage medium, a computer program product and an electron beam detection device. BACKGROUND

[0002] In the chip manufacturing process, critical dimension measurement and defect detection are key links of integrated circuit yield management. In the related art, an electron beam detection device (such as a scanning electron microscope) is usually used to detect a wafer to discover defect problems in time in the wafer manufacturing process.

[0003] The electron beam detection device obtains a detection image of the wafer through an electron beam. Specifically, the wafer surface bombarded by the electron beam excites physical signals such as secondary electrons and backscattered electrons, which are collected and amplified by a probe and then subjected to analog-to-digital conversion to obtain a detection image. The electron beam detection device can usually switch the beam intensity of the electron beam. When a small beam is used, the total amount of secondary electrons generated on the sample surface is low, and therefore a high gain of the probe is required to obtain a detection image with a good signal-to-noise ratio. Conversely, when a large beam is used, a low gain of the probe is required to obtain a detection image with a good signal-to-noise ratio. A low gain leads to a poor signal-to-noise ratio of the detection image, and a high gain leads to over-saturation of the probe and thus overexposure of the detection image.

[0004] With the continuous upgrading of chip manufacturing processes, in order to more comprehensively and accurately detect wafers, the electron beam detection device needs to frequently switch between small beams and large beams, which requires the gain of the probe to be adjusted in time to obtain a detection image with a good signal-to-noise ratio.

[0005] In the related art, the gain of the probe needs to be manually adjusted by a detection personnel, which on the one hand is low in efficiency and cannot meet the detection needs of wafer factories in large quantities, and on the other hand leads to unstable quality of the detection image and affects the accuracy of detection. SUMMARY

[0006] An object of the present application is to provide a probe adjustment method for an electron beam detection device, a computer readable storage medium, a computer program product and an electron beam detection device to automatically adjust the gain of the probe according to the application scenario of the electron beam detection device and improve the efficiency and accuracy of semiconductor detection.

[0007] Specifically, according to one aspect of the present application, the present application provides a probe adjustment method for an electron beam detection device, comprising:

[0008] obtaining an electron beam control parameter of the electron beam detection device, the electron beam control parameter being used to adjust the beam spot and / or beam current of the electron beam of the electron beam detection device;

[0009] determining a target gain corresponding to the electron beam control parameter by using a pre-established gain model, the gain model being used to describe a correspondence between the electron beam control parameter and an ideal gain of the detector.

[0010] Optionally, the establishing process of the gain model comprises:

[0011] collecting experimental data of the electron beam detection device, the experimental data comprising an aperture, a condenser excitation and a corresponding gain setting value;

[0012] fitting the experimental data by using a preset fitting algorithm, and taking a function relationship obtained as the gain model.

[0013] Optionally, the establishing process of the gain model comprises:

[0014] collecting a plurality of sets of experimental data under a condition that a condenser excitation of the electron beam detection device remains unchanged, the experimental data comprising an aperture and a corresponding gain setting value;

[0015] fitting the plurality of sets of experimental data, and taking a function relationship between the gain setting value and the aperture as the gain model.

[0016] Optionally, the experimental data further comprises a measured beam current, and the function relationship between the gain setting value and the aperture is obtained by:

[0017] fitting the plurality of sets of experimental data to obtain a function relationship between the measured beam current and the aperture, and to obtain a function relationship between the gain setting value and the measured beam current;

[0018] obtaining the function relationship between the gain setting value and the aperture according to the function relationship between the measured beam current and the aperture and the function relationship between the gain setting value and the measured beam current.

[0019] Optionally, the establishing process of the gain model comprises:

[0020] collecting a plurality of sets of experimental data under a condition that an aperture of the electron beam detection device remains unchanged, the experimental data comprising a condenser excitation and a corresponding gain setting value;

[0021] fitting the plurality of sets of experimental data, and taking a function relationship between the gain setting value and the condenser excitation as the gain model.

[0022] Optionally, the experimental data further comprises a measured beam current, and the function relationship between the gain setting value and the condenser excitation is obtained by:

[0023] fitting the experimental data, a function relationship between the measured beam current and the condenser excitation is obtained, and a function relationship between the gain setting value and the measured beam current is obtained;

[0024] According to the function relationship between the measured beam current and the condenser excitation, and the function relationship between the gain setting value and the measured beam current, a function relationship between the gain setting value and the condenser excitation is obtained.

[0025] Optionally, the process of establishing the gain model comprises:

[0026] The historical experimental data of the electron beam detection device is obtained, and the historical experimental data comprises data of the diaphragm aperture, the condenser excitation, the measured beam current and the corresponding gain setting value recorded in a plurality of effective detection processes;

[0027] The historical experimental data is fitted to obtain a function relationship between the measured beam current and the diaphragm aperture and the condenser excitation, and a function relationship between the gain setting value and the measured beam current is obtained;

[0028] According to the function relationship between the measured beam current and the diaphragm aperture and the condenser excitation, and the function relationship between the gain setting value and the measured beam current, a function relationship between the gain setting value and the diaphragm aperture and the condenser excitation is obtained, and the function relationship is taken as the gain model.

[0029] According to another aspect of the present application, there is also provided a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of any of the above-mentioned probe adjustment methods for an electron beam detection device.

[0030] According to still another aspect of the present application, there is also provided a computer program product comprising a computer program which, when executed by a processor, implements the steps of any of the above-mentioned probe adjustment methods for an electron beam detection device.

[0031] According to yet another aspect of the present application, there is also provided an electron beam detection device comprising a condenser, a diaphragm, a probe and a controller, the controller comprising a memory, a processor and a computer program stored on the memory, and the processor, when executing the computer program, implements the steps of any of the above-mentioned probe adjustment methods for an electron beam detection device.

[0032] The probe adjustment method for the electron beam detection device of the present application obtains the corresponding relationship between the electron beam control parameter and the ideal gain of the probe by pre-establishing a gain model. By obtaining the electron beam control parameter and inputting the electron beam control parameter into the gain model, the probe can be automatically adjusted according to the obtained target gain, and a detection image with better saturation and better signal-to-noise ratio is obtained. Compared with manually adjusting the gain of the probe, the present application realizes automatic adjustment of the gain of the probe according to the application scene of the electron beam detection device, and achieves the purpose of improving the efficiency and accuracy of semiconductor detection.

[0033] The above and other objects, advantages and features of the present application will become more apparent from the following detailed description of some embodiments thereof, when taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0034] Some specific embodiments of the present application will be described in detail below with reference to the accompanying drawings, in which the same or similar components are denoted by the same reference numerals, and are not necessarily drawn to scale. Those skilled in the art will appreciate that the drawings are not necessarily to scale. In the drawings:

[0035] Figure 1 is a flowchart of an adjustment method according to an embodiment of the present application;

[0036] Figure 2 is a flowchart of establishing a gain model from experimental data according to an adjustment method of the present application;

[0037] Figure 3 is a flowchart of obtaining a function relationship between a gain setting value and an aperture hole according to an adjustment method of the present application;

[0038] Figure 4 is a flowchart of obtaining a function relationship between a gain setting value and an aperture hole according to an adjustment method of another embodiment of the present application;

[0039] Figure 5 is a flowchart of obtaining a function relationship between a gain setting value and a condenser excitation according to an adjustment method of the present application;

[0040] Figure 6 is a flowchart of obtaining a function relationship between a gain setting value and a condenser excitation according to an adjustment method of another embodiment of the present application;

[0041] Figure 7 is a flowchart of establishing a gain model from historical experimental data according to an adjustment method of the present application;

[0042] Figure 8is a schematic diagram of an electron beam detection device according to an embodiment of the present application;

[0043] Figure 9 is a schematic diagram of a computer program product according to an embodiment of the present application;

[0044] Figure 10 is a schematic diagram of a computer readable storage medium according to an embodiment of the present application. DETAILED DESCRIPTION

[0045] The purpose of the probe adjustment method for the electron beam detection device of the present embodiment is to automatically adjust the gain of the probe according to the application scenario of the electron beam detection device, so as to improve the efficiency and accuracy of semiconductor detection.

[0046] Figure 1 is a schematic diagram of a probe adjustment method for an electron beam detection device according to an embodiment of the present application. The method can generally include:

[0047] S100, obtaining an electron beam control parameter of an electron beam detection device, the electron beam control parameter being used to adjust the beam spot and / or beam current of the electron beam of the electron beam detection device;

[0048] S200, determining a target gain corresponding to the electron beam control parameter by using a pre-established gain model, the gain model being used to describe the corresponding relationship between the electron beam control parameter and the ideal gain of the probe.

[0049] The electron beam detection device can be a scanning electron microscope (SEM), a transmission electron microscope (TEM), etc. The object to be detected can be a semiconductor product, such as a wafer. The electron beam detection device can be used to measure the critical dimensions in the wafer manufacturing process, detect wafer manufacturing defects, etc.

[0050] Taking a scanning electron microscope as an example, the scanning electron microscope generally includes an electron source, a condenser lens, a diaphragm, an objective lens, a sample stage, a probe, etc. The electron source is used to emit an electron beam, and the scanning electron microscope can use different electron sources as needed. When the electron beam irradiates the surface of the wafer to be detected, it will excite physical signals such as secondary electrons and backscattered electrons. These signals are collected and amplified by the probe, and then subjected to analog-to-digital conversion, so that an electron image can be obtained. The condenser lens generally changes the beam current of the electron beam and affects the beam spot of the electron beam by adjusting the condenser lens excitation size. The diaphragm generally changes the beam spot of the electron beam and affects the beam current of the electron beam by adjusting the size of the diaphragm aperture. The probe generally changes the amplification multiple of the received physical signals by adjusting the gain size, so as to change the saturation of the detected image.

[0051] Taking the secondary electron as an example of the physical signal, the beam current of the electron beam affects the total amount of the excited secondary electrons. When a small beam current electron beam is used, the total amount of the secondary electrons generated on the surface of the wafer to be detected is low, and therefore the gain of the detector needs to be adjusted to a high value to obtain an image with a good signal-to-noise ratio. Conversely, when a large beam current electron beam is used, the gain of the detector needs to be adjusted to a low value to obtain an image with a good signal-to-noise ratio. A low gain leads to a poor signal-to-noise ratio of the image, and a high gain leads to over-saturation of the detector and thus over-exposure of the image.

[0052] In this embodiment, the electron beam control parameters can include the amount of current of the electron source, the total emission beam current of the electron source, the acceleration voltage, the diaphragm aperture, the condenser excitation, the objective lens excitation, and the like. When a wafer is used as the object to be detected, the amount of current of the electron source and the total emission beam current of the electron source, the acceleration voltage, and the like are generally fixed parameters. By adjusting the diaphragm aperture, the condenser excitation, the objective lens excitation, and the like, the beam current of the electron beam can be conveniently and accurately changed, thereby changing the total amount of the secondary electrons generated on the surface of the wafer to be detected.

[0053] When a wafer is detected using a scanning electron microscope, wafers of different manufacturing processes or different regions of a wafer of the same manufacturing process can need to be detected using different beam currents. Therefore, for different detection scenarios, the scanning electron microscope needs to frequently adjust the diaphragm aperture or the condenser excitation, and adjust the gain of the detector in coordination, to obtain a detection image with a good saturation degree and a good signal-to-noise ratio.

[0054] In this embodiment, a gain model is pre-established, and the gain model is used to describe the correspondence between the electron beam control parameters and the ideal gain of the detector. The ideal gain is the gain corresponding to a detection image with a good saturation degree and a good signal-to-noise ratio. The gain model can be a functional relationship. Exemplarily, the gain model can be a functional relationship between the diaphragm aperture and the ideal gain, a functional relationship between the condenser excitation and the ideal gain, a functional relationship between the diaphragm aperture and the condenser excitation and the ideal gain, and the like. The functional relationship can be obtained through theoretical calculation, or can be obtained by fitting after collecting experimental data. The gain model can also be a deep learning model, for example, obtained through deep learning algorithm training after collecting historical data.

[0055] The scanning electron microscope can be provided with a controller. When a wafer to be detected is detected, for example, the wafer to be detected is placed on the sample table, before the electron source emits an electron beam, the relevant units of the scanning electron microscope will set and collect the electron beam control parameters, such as the diaphragm aperture, the condenser excitation, the objective lens excitation, and the like, as needed, and send the electron beam control parameters to the controller. The controller obtains the target gain according to the received electron beam control parameters and the pre-established gain model, and then sets the detector using the target gain. Next, the wafer to be detected is detected using the electron beam, and a better detection image is obtained through the detector.

[0056] The probe adjustment method for the electron beam detection device of the present application obtains the correspondence between the electron beam control parameter and the ideal gain of the probe by pre-establishing a gain model. By obtaining the electron beam control parameter and inputting the electron beam control parameter into the gain model, the probe can be automatically adjusted according to the obtained target gain, and a detection image with better saturation and better signal-to-noise ratio is obtained. Compared with manually adjusting the gain of the probe, the present method automatically adjusts the gain of the probe according to the application scene of the electron beam detection device, and achieves the purpose of improving the efficiency and accuracy of semiconductor detection.

[0057] In some embodiments of the probe adjustment method of the present application, as shown in Figure 2 The establishment process of the gain model includes:

[0058] S311, collecting experimental data of the electron beam detection device, the experimental data including the gain setting value corresponding to the aperture, the condenser excitation and the probe;

[0059] S313, using a preset fitting algorithm to fit the experimental data, and taking the obtained function relationship as the gain model.

[0060] The aperture of the scanning electron microscope is usually provided with a plurality of aperture holes with fixed sizes, and the aperture hole size can be quickly switched.

[0061] Exemplarily, when collecting the experimental data, the aperture hole can be set to an initial value, the condenser excitation can be set to an initial value, and the gain of the probe can be set to an initial value. Then the electron beam is used to irradiate the surface of the wafer to be detected, and after obtaining the initial detection image, the gain value of the probe is gradually adjusted by a preset method until the detection image with the best quality is obtained, and the corresponding gain value is recorded as the gain setting value. For example, the gain value of the probe is adjusted in order from small to large by an automatic control device, and an image recognition algorithm is used to identify the saturation of the detection image corresponding to each gain value. When the detection image that does not produce overexposure is found, the detection image is taken as the detection image with the best quality, and the gain value corresponding to the detection image is taken as the gain setting value. Next, the aperture hole and the condenser excitation are adjusted one by one, and the corresponding gain setting value is recorded.

[0062] After a sufficient number of sets of experimental data are obtained, a preset fitting algorithm is used to fit the experimental data, and the gain setting value is taken as the ideal gain to obtain the correspondence between the aperture hole, the condenser excitation and the ideal gain of the probe.

[0063] It should be understood that the experimental data used for fitting the above function relationship can be collected by conducting experiments, or can be obtained from historical detection data, which is not limited here.

[0064] In some embodiments of the present application, the above data collection step can be repeated, and multiple gain setting values can be collected for the same aperture and condenser excitation, and the average of the multiple gain setting values is used as the ideal gain to obtain the functional relationship, thereby reducing experimental errors and improving the accuracy of the gain model.

[0065] In some embodiments of the detector adjustment method of the present application, as shown in Figure 3 The gain model establishment process includes:

[0066] S321, under the condition that the condenser excitation of the electron beam detection device remains unchanged, multiple sets of experimental data are collected, and the experimental data includes the gain setting value corresponding to the aperture and the detector;

[0067] S323, the multiple sets of experimental data are fitted, and the functional relationship between the gain setting value and the aperture is obtained as the gain model.

[0068] In actual use of the scanning electron microscope to detect wafers, it is not necessary to adjust the condenser excitation and the aperture at the same time in all scenarios. In some scenarios, only adjusting the aperture can obtain appropriate secondary electron amount, and then a better quality detection image is obtained. The present embodiment is used to simplify the difficulty of the function relationship of the gain model.

[0069] Specifically, when collecting experimental data, the aperture can be set to an initial value (for example, x1) and the gain of the detector is set to an initial value while keeping the condenser excitation unchanged. Then the electron beam is used to irradiate the surface of the wafer to be detected, and after obtaining the initial detection image, the gain value of the detector is adjusted in a predetermined order until the best quality detection image is obtained, and the corresponding gain value is recorded as the gain setting value (for example, z1). Next, the aperture is adjusted item by item (for example, x2, x3, x4, x5, etc.), and the corresponding gain setting value (for example, z2, z3, z4, z5, etc.) is recorded.

[0070] After a sufficient number of experimental data are obtained, a predetermined fitting algorithm is used to fit the experimental data, and the gain setting value is used as the ideal gain to obtain the corresponding relationship between the aperture and the ideal gain of the detector.

[0071] In some embodiments of the detector adjustment method of the present application, as shown in Figure 4 The experimental data further includes the measured beam current, and the gain setting value and the aperture functional relationship acquisition method includes:

[0072] S331, under the condition that the condenser excitation of the electron beam detection device remains unchanged, multiple sets of experimental data are collected, and the experimental data includes the gain setting value corresponding to the aperture, the measured beam current and the detector;

[0073] S333, fitting the multiple sets of experimental data to obtain a function relationship between the measured beam current and the aperture hole, and a function relationship between the gain setting value and the measured beam current;

[0074] S335, obtaining a function relationship between the gain setting value and the aperture hole according to the function relationship between the measured beam current and the aperture hole and the function relationship between the gain setting value and the measured beam current.

[0075] The total amount of secondary electrons is directly related to the beam current, and the size of the aperture hole does not directly affect the total amount of secondary electrons, but indirectly affects the total amount of secondary electrons by affecting the beam spot and the beam current. As in the method of the previous embodiment, when directly fitting the function relationship between the aperture hole and the gain setting value, more experimental data needs to be collected, and the fitting difficulty is greater. The present embodiment is used to further simplify the function fitting difficulty and improve the accuracy of the gain model.

[0076] In the present embodiment, the measured beam current of the electron beam can be measured using a Faraday cup. Specifically, when collecting experimental data, the aperture hole can be set to an initial value (for example, x1) and the gain of the detector can be set to an initial value while keeping the excitation of the condenser unchanged. Then, the electron beam is used to irradiate the surface of the wafer to be detected, and after obtaining the initial detection image, the gain value of the detector is adjusted through a preset sequence until the best detection image is obtained, and the corresponding gain value is recorded as the gain setting value (for example, z1), and the corresponding measured beam current (for example, y1) is recorded. Next, adjust the aperture hole one by one (for example, x2, x3, x4, x5, etc.), and record the corresponding measured beam current (for example, y2, y3, y4, y5, etc.) and gain setting value (for example, z2, z3, z4, z5, etc.) respectively.

[0077] After obtaining a sufficient number of sets of experimental data, the data of the aperture hole and the measured beam current are fitted using a preset fitting algorithm to obtain a function relationship between the measured beam current and the aperture hole (for example, y=f(x), y represents the measured beam current, and x represents the aperture hole).

[0078] Next, the data of the measured beam current and the gain setting value are fitted using a preset fitting algorithm to obtain a function relationship between the gain setting value and the measured beam current (for example, z=g(y), z represents the ideal gain).

[0079] Finally, the two functions are combined to obtain a function relationship between the gain setting value and the aperture hole (for example, z=g(f(x))).

[0080] It needs to be understood that in some cases, the function relationship between the gain setting value and the measured beam current can also be used to guide the adjustment of the gain of the detector. However, the measured beam current is data obtained when the scanning electron microscope has started to emit the electron beam, and for application scenarios in which the scanning electron microscope has not started to emit the electron beam, the function relationship between the gain setting value and the aperture hole of the aperture still needs to be used to guide the adjustment of the gain of the detector.

[0081] In some embodiments of the detector adjustment method of the present application, as shown in Figure 5 The establishment process of the gain model includes:

[0082] S341, under the condition that the aperture hole of the electron beam detection device remains unchanged, a plurality of sets of experimental data are collected, the experimental data including the condenser excitation and the gain setting value corresponding to the detector;

[0083] S343, the plurality of sets of experimental data are fitted, and the function relationship between the obtained gain setting value and the condenser excitation is taken as the gain model.

[0084] In the prior art, the aperture hole of the aperture needs to use a motion mechanism, and the operation is relatively troublesome and the adjustment efficiency is relatively low. The adjustment of the condenser excitation is relatively simple and efficient.

[0085] Specifically, when collecting experimental data, the condenser excitation can be first set to an initial value (for example, i1), and the gain of the detector is set to an initial value. Then the surface of the wafer to be detected is irradiated by the electron beam, and after an initial detection image is obtained, the gain value of the detector is adjusted in a preset order until a detection image with the best quality is obtained, and the corresponding gain value is recorded as the gain setting value (for example, z1). Next, the condenser excitation is adjusted item by item (for example, i2, i3, i4, i5, etc.), and the corresponding gain setting value (for example, z2, z3, z4, z5, etc.) is recorded.

[0086] After a sufficient number of sets of experimental data are obtained, a preset fitting algorithm can be used to fit the experimental data, taking the gain setting value as the ideal gain, to obtain the corresponding relationship between the condenser excitation and the ideal gain of the detector.

[0087] In some embodiments of the detector adjustment method of the present application, as shown in Figure 6 The experimental data further include the measured beam current, and the method for obtaining the function relationship between the gain setting value and the condenser excitation includes:

[0088] S351, under the condition that the aperture hole of the electron beam detection device remains unchanged, a plurality of sets of experimental data are collected, the experimental data including the condenser excitation, the measured beam current, and the gain setting value corresponding to the detector;

[0089] S353, fitting the multiple sets of experimental data to obtain a functional relationship between the measured beam current and the condenser excitation, and a functional relationship between the gain setting value and the measured beam current;

[0090] S355, obtaining a functional relationship between the gain setting value and the condenser excitation according to the functional relationship between the measured beam current and the condenser excitation, and the functional relationship between the gain setting value and the measured beam current.

[0091] The embodiment is used to further simplify the difficulty of function fitting and improve the accuracy of the gain model. Specifically, when collecting experimental data, the condenser excitation can be set to an initial value (for example, i1) while keeping the condenser excitation unchanged, and the gain of the detector is set to an initial value. Then, the surface of the wafer to be detected is irradiated using an electron beam, and after obtaining an initial detection image, the gain value of the detector is adjusted in a predetermined order until a detection image of the best quality is obtained, and the corresponding gain value is recorded as the gain setting value (for example, z1), and the corresponding measured beam current (for example, y1) is recorded. Next, adjust the condenser excitation one by one (for example, i2, i3, i4, i5, etc.), and record the corresponding measured beam current (for example, y2, y3, y4, y5, etc.) and gain setting value (for example, z2, z3, z4, z5, etc.) respectively.

[0092] After obtaining a sufficient number of sets of experimental data, the data of the condenser excitation and the measured beam current are fitted using a predetermined fitting algorithm to obtain a functional relationship between the measured beam current and the condenser excitation (for example, y=p(i), y represents the measured beam current, and i represents the condenser excitation).

[0093] Next, the data of the measured beam current and the gain setting value are fitted using a predetermined fitting algorithm to obtain a functional relationship between the gain setting value and the measured beam current (for example, z=g(y), z represents the ideal gain).

[0094] Finally, the two functions are combined to obtain a functional relationship between the gain setting value and the condenser excitation (for example, z=g(p(i))).

[0095] In some embodiments of the detector adjustment method of the present application, as shown in Figure 7 the establishment process of the gain model includes:

[0096] S361, obtaining historical experimental data of the electron beam detection device, the historical experimental data including data of the aperture, the condenser excitation, the measured beam current and the gain setting value of the detector recorded in multiple effective detection processes;

[0097] S363, fitting the historical experimental data to obtain a functional relationship between the measured beam current and the aperture and the condenser excitation, and a functional relationship between the gain setting value and the measured beam current;

[0098] S365, according to the function relationship between the measured beam current and the aperture and the condenser excitation, and the function relationship between the gain setting value and the measured beam current, the function relationship between the gain setting value and the aperture and the condenser excitation is obtained, and is used as the gain model.

[0099] In this embodiment, the function relationship between the measured beam current and the aperture and the condenser excitation (for example, y=q(x,i), y represents the measured beam current, x represents the aperture, and i represents the condenser excitation) and the function relationship between the gain setting value and the measured beam current (for example, z=g(y), z represents the ideal gain) can be obtained by fitting historical experimental data, and finally the function relationship between the gain setting value and the aperture and the condenser excitation (for example, z=g(q(x,i))) is obtained.

[0100] The flowchart provided in this embodiment is not intended to indicate that the operations of the method are performed in any specific order, or that all the operations of the method are included in all cases. In addition, the method can include additional operations. Additional changes can be made to the above method within the scope of the technical idea provided by the method of this embodiment.

[0101] It should be understood that in some embodiments, each part can be realized by hardware, software, firmware or a combination thereof. In the above implementation, a plurality of steps or methods can be realized by software or firmware stored in a memory and executed by a suitable instruction execution system.

[0102] The embodiment of the application further provides a computer program product 10, a computer readable storage medium 20 and an electron beam detection device 40. Figure 9 is a schematic diagram of the computer program product 10 according to an embodiment of the application, Figure 10 is a schematic diagram of the computer readable storage medium 20 according to an embodiment of the application, Figure 8 is a schematic diagram of the electron beam detection device 40 according to an embodiment of the application. The computer program product 10 comprises a computer program 11, which, when executed by the processor 32, realizes the steps of any of the above-described probe adjustment methods for an electron beam detection device. The computer readable storage medium 20 has the above-described computer program 11 stored thereon, and the computer program 11, when executed by the processor 32, realizes the steps of any of the above-described probe adjustment methods for an electron beam detection device. The electron beam detection device 40 can comprise a condenser 41, an aperture 42, a probe 43 and a controller 44, the controller comprising a memory 31, a processor 32 and a computer program 11 stored on the memory 31, and when the processor 32 executes the computer program, the steps of any of the above-described probe adjustment methods for an electron beam detection device are realized.

[0103] The computer program 11 for performing the operations of the present application can be in assemblies instructions, Instruction Set Architecture (ISA) instructions, machine instructions, machine dependent instructions, microcode, firmware instructions, state-setting data, configuration data for integrated circuits, or in source code or object code written in any combination of one or more programming languages, all of which can be transformed by an implementation of the present application. The computer program 11 can execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection can be made to an external computer (for example, through the Internet using an Internet Service Provider). In some embodiments, electronic circuitry including, for example, programmable logic circuitry, field-programmable gate array (FPGA), or programmable logic array (PLA) can execute the computer readable program instructions by utilizing state information of the computer readable program instructions to personalize the electronic circuitry, in order to perform aspects of the present application.

[0104] For the description of the present embodiment, the computer program product 10 is a product of manufacture that contains the computer program 11.

[0105] For the description of the present embodiment, the computer readable storage medium 20 is a tangible device that can retain and store computer program 11, which can be any medium (non-transitory) that can contain, store, communicate, propagate or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer readable storage medium 20 include the following: portable computer diskette, hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or Flash memory), static random access memory (SRAM), portable compact disc read-only memory (CD-ROM), digital versatile disk (DVD), memory stick, a floppy disk, a mechanical encoding device, and any suitable combination of the foregoing. A computer readable storage medium 20, a computer readable storage device, a computer readable storage, or computer readable storage is a tangible device that can retain and store a computer program 11 for use by or in connection with an instruction execution system, apparatus, or device.

[0106] At this point, those skilled in the art will appreciate that although specific exemplary embodiments of the application have been described herein, the present application also encompasses many other variations or modifications in accordance with the principles of the application as set forth above. Accordingly, the scope of the present application should be understood to include all such variations and modifications.

Claims

1. A detector adjustment method for an electron beam detection device, characterized in that, include: Obtain the electron beam control parameters of the electron beam detection device, wherein the electron beam control parameters are used to adjust the beam spot and / or beam current of the electron beam in the electron beam detection device; A target gain corresponding to the electron beam control parameters is determined using a pre-established gain model, which describes the correspondence between the electron beam control parameters and the ideal gain of the detector.

2. The adjustment method according to claim 1, characterized in that, The process of establishing the gain model includes: The experimental data of the electron beam detection device are collected, including the aperture, condenser lens excitation and corresponding gain settings. The experimental data are fitted using a preset fitting algorithm, and the resulting functional relationship is used as the gain model.

3. The adjustment method according to claim 1, characterized in that, The process of establishing the gain model includes: With the excitation of the condenser lens of the electron beam detection device remaining unchanged, multiple sets of experimental data are collected, including the aperture and the corresponding gain setting value. The experimental data from multiple sets are fitted, and the functional relationship between the obtained gain setting value and the aperture is used as the gain model.

4. The adjustment method according to claim 3, characterized in that, The experimental data also includes measured beam current, and the method for obtaining the functional relationship between the gain setpoint and the aperture includes: By fitting multiple sets of experimental data, the functional relationship between the measured beam current and the aperture is obtained, as well as the functional relationship between the gain setting value and the measured beam current is obtained. Based on the functional relationship between the measured beam current and the aperture and the functional relationship between the gain setting value and the measured beam current, the functional relationship between the gain setting value and the aperture is obtained.

5. The adjustment method according to claim 1, characterized in that, The process of establishing the gain model includes: With the aperture of the electron beam detection device remaining unchanged, multiple sets of experimental data are collected, including condenser lens excitation and corresponding gain setting values. The experimental data from multiple sets are fitted, and the functional relationship between the obtained gain setting value and the excitation of the condenser lens is used as the gain model.

6. The adjustment method according to claim 5, characterized in that, The experimental data also includes measured beam current, and the method for obtaining the functional relationship between the gain setpoint and the condenser lens excitation includes: By fitting multiple sets of experimental data, the functional relationship between the measured beam current and the excitation of the condenser lens is obtained, as well as the functional relationship between the gain setting value and the measured beam current. Based on the functional relationship between the measured beam current and the excitation of the condenser lens, and the functional relationship between the gain setting value and the measured beam current, the functional relationship between the gain setting value and the excitation of the condenser lens is obtained.

7. The adjustment method according to claim 1, characterized in that, The process of establishing the gain model includes: Acquire historical experimental data of the electron beam detection device, including data on aperture, condenser lens excitation, measured beam current and corresponding gain settings recorded during multiple effective detection processes; By fitting the historical experimental data, the functional relationship between the measured beam current and the aperture and the excitation of the condenser lens is obtained, as well as the functional relationship between the gain setting value and the measured beam current is obtained. Based on the functional relationship between the measured beam current and the aperture and the condenser lens excitation, and the functional relationship between the gain setting value and the measured beam current, the functional relationship between the gain setting value and the aperture and the condenser lens excitation is obtained and used as the gain model.

8. A computer-readable storage medium, characterized in that, It stores a computer program that, when executed by a processor, implements the steps of the detector adjustment method for an electron beam detection device as described in any one of claims 1 to 7.

9. A computer program product, comprising a computer program, characterized in that, When executed by a processor, the computer program implements the steps of the detector adjustment method for an electron beam detection device as described in any one of claims 1 to 7.

10. An electron beam detection device, characterized in that, The device includes a condenser lens, an aperture, a detector, and a controller. The controller includes a memory, a processor, and a computer program stored in the memory. When the processor executes the computer program, it implements the steps of the detector adjustment method for an electron beam detection device as described in any one of claims 1 to 7.

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