Substrate structure, forming method thereof and packaging structure

Abstract

The invention discloses a substrate structure, a forming method thereof and a packaging structure, and the substrate structure comprises a core panel which is made of a metal material; the conductive column is embedded in the core panel and penetrates through the core panel; the first insulating layer is located between the side wall of the conductive column and the core panel, the first insulating layer surrounds and covers the side wall of the conductive column, and the end face of the conductive column is exposed. The core panel is made of the metal material, the metal material has the characteristic of high rigidity, the mechanical strength of the core panel and the impact resistance of the core panel are improved, and the metal material has good thermal conductivity, so that the reliability and the heat dissipation performance of the substrate structure are improved; besides, the first insulating layer prevents the conductive columns from being in direct contact with the core panel and is beneficial to blocking electrical connection between the conductive columns and the core panel, so that the problem of short circuit of the substrate structure is effectively inhibited, and the reliability of the substrate structure is improved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor packaging, and more particularly to a substrate structure, a method for forming the substrate, and a packaging structure. Background Technology

[0002] With the rapid development of technology, especially in fields such as intelligent application devices, automotive electronics, and communication equipment, high integration, miniaturization, and high reliability are required for integrated circuits. As a result, System-in-Package (SiP) has emerged.

[0003] System-in-package (SiP) is an advanced integrated circuit packaging technology that integrates chips and passive components with different functions into a single package structure to form a complete system or subsystem. SiP processes typically use a packaging substrate on which the chips are mounted, enabling electrical interconnections between chips and between chips and the packaging substrate.

[0004] As the carrier of the packaging structure, the performance of the packaging substrate will affect the performance of the packaging structure. Summary of the Invention

[0005] The problem addressed by the embodiments of this disclosure is to provide a substrate structure, a method for forming the same, and a packaging structure, which are beneficial for improving the reliability and heat dissipation performance of the substrate structure.

[0006] To address the aforementioned issues, this disclosure provides a substrate structure comprising: a core panel made of a metal material; conductive pillars embedded in and penetrating the core panel; and a first insulating layer located between the sidewalls of the conductive pillars and the core panel, the first insulating layer surrounding and covering the sidewalls of the conductive pillars and exposing the end faces of the conductive pillars.

[0007] Accordingly, this disclosure also provides a packaging structure, including the substrate structure described in any embodiment of this disclosure.

[0008] This disclosure also provides a method for forming a substrate structure, comprising: providing a core panel, the core panel being made of a metallic material; forming a through-hole in the core panel, the through-hole penetrating the core panel; disposing a conductive post in the through-hole, a gap being formed between the sidewall of the conductive post and the sidewall of the through-hole, the gap surrounding the conductive post; forming a first insulating layer in the gap, the first insulating layer surrounding and covering the sidewall of the conductive post and exposing the end face of the conductive post.

[0009] Compared with the prior art, the technical solution of the present disclosure has the following advantages:

[0010] The substrate structure provided in this embodiment includes: a core panel made of a metal material; conductive pillars embedded in and penetrating the core panel; and a first insulating layer located between the sidewalls of the conductive pillars and the core panel, the first insulating layer surrounding and covering the sidewalls of the conductive pillars and exposing the end faces of the conductive pillars. In this embodiment, the core panel is made of a metal material, which has high rigidity, which is beneficial to improving the mechanical strength and impact resistance of the core panel. Furthermore, the metal material has good thermal conductivity, which is beneficial to improving the reliability and heat dissipation performance of the substrate structure. In addition, the first insulating layer prevents the conductive pillars from directly contacting the core panel, which helps to block the electrical connection between the conductive pillars and the core panel, thereby effectively suppressing short circuits in the substrate structure and further improving the reliability of the substrate structure.

[0011] In the forming method provided in this embodiment, a through-hole is formed in a metal core panel, the through-hole penetrating the core panel. A conductive post is disposed in the through-hole, a gap exists between the sidewall of the conductive post and the sidewall of the through-hole, and the gap surrounds the conductive post. A first insulating layer is formed in the gap, the first insulating layer surrounds and covers the sidewall of the conductive post, and exposes the end face of the conductive post. In this embodiment, the core panel is made of metal, which has high rigidity, which is beneficial to improving the mechanical strength and impact resistance of the core panel. Metal also has good thermal conductivity, which is beneficial to improving the reliability and heat dissipation performance of the substrate structure. In addition, the first insulating layer prevents the conductive post from directly contacting the core panel, which helps to block the electrical connection between the conductive post and the core panel, thereby effectively suppressing the problem of short circuit in the substrate structure and thus improving the reliability of the substrate structure.

[0012] Accordingly, this disclosure provides a packaging structure including the substrate structure described in this disclosure. Since the substrate structure has high reliability and good heat dissipation performance, it is beneficial to improve the reliability and heat dissipation performance of the packaging structure. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the substrate structure according to an embodiment of the present disclosure;

[0014] Figure 2 This is a flowchart of an embodiment of the method for forming the substrate structure disclosed herein;

[0015] Figures 3 to 12 This is a schematic diagram of the structure corresponding to each step in one embodiment of the method for forming the substrate structure disclosed herein. Detailed Implementation

[0016] As is known from the background art, the packaging substrate serves as the carrier of the packaging structure, and its performance directly affects the performance of the packaging structure. However, the performance of the substrate structure still needs to be improved.

[0017] The most common type of packaging substrate is the organic material substrate. Studies have found that traditional organic material substrates have a low thermal conductivity, which results in poor heat dissipation of the packaging structure.

[0018] Glass core substrates offer ultra-low flatness (extremely smooth surface), better thermal stability, and mechanical stability. Due to the exceptional flatness of glass, the focus depth of photolithography can be improved, allowing for the formation of more vias within the same area compared to organic substrates. The spacing between vias (TGVs) can be less than 100 micrometers, thereby increasing the interconnect density between chips. However, glass is relatively brittle and easily breaks during processing, posing significant technical challenges for ultra-thin cutting and fine drilling.

[0019] Therefore, there is an urgent need for a new substrate structure that can meet the requirements of mechanical strength and impact resistance while having good heat dissipation performance.

[0020] To address the aforementioned issues, this disclosure provides a substrate structure comprising: a core panel made of a metal material; conductive pillars embedded in and penetrating the core panel; and a first insulating layer located between the sidewalls of the conductive pillars and the core panel, the first insulating layer surrounding and covering the sidewalls of the conductive pillars and exposing the end faces of the conductive pillars.

[0021] In this embodiment, the core panel is made of metal. Metal has high rigidity, which helps to improve the mechanical strength and impact resistance of the core panel. Metal also has good thermal conductivity, which helps to improve the reliability and heat dissipation performance of the substrate structure. In addition, the first insulating layer prevents the conductive pillars from directly contacting the core panel, which helps to block the electrical connection between the conductive pillars and the core panel, thereby effectively suppressing the problem of short circuits in the substrate structure and thus improving the reliability of the substrate structure.

[0022] To make the above-mentioned objects, features and advantages of the embodiments of this disclosure more apparent and understandable, the specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings.

[0023] Figure 1 This is a schematic diagram of a substrate structure according to an embodiment of the present disclosure.

[0024] In this embodiment, the substrate structure includes: a core panel 11, the core panel 11 being made of a metal material; a conductive post 21, embedded in and penetrating the core panel 11; and a first insulating layer 31, located between the sidewall of the conductive post 21 and the core panel 11, the first insulating layer 31 surrounding and covering the sidewall of the conductive post 21 and exposing the end face of the conductive post 21.

[0025] The core panel 11 serves as the central carrier layer of the substrate structure, providing a technological basis for forming the substrate structure.

[0026] In this embodiment, the core panel 11 is made of a metallic material. Metallic materials have high rigidity, which helps improve the mechanical strength and impact resistance of the core panel 11. Furthermore, metallic materials have good thermal conductivity, which helps improve the reliability and heat dissipation performance of the substrate structure, and consequently, improves the reliability and performance of the packaging structure.

[0027] In this embodiment, the substrate structure satisfies one or more of the following: the Young's modulus of the material of the core panel 11 is greater than 100 GPa; the coefficient of thermal expansion of the material of the core panel 11 is less than 10 ppm / K.

[0028] The Young's modulus of the material of the core panel 11 is greater than 100 GPa, which is beneficial to improve the stiffness of the core panel 11 and effectively suppress the deformation of the core panel 11 caused by excessive internal stress due to excessive panel size, too many wiring layers or heating and cooling processes during manufacturing. This allows the stiffness of the core panel 11 to meet the requirements of setting more wiring layers and increasing size, thereby meeting the requirements of different packaging processes.

[0029] The core panel 11 material has a coefficient of thermal expansion of less than 10 ppm / K, which helps improve the matching degree between the coefficient of thermal expansion of the core panel 11 and the silicon wafer or silicon chip. This reduces thermal stress caused by the large difference in the coefficients of thermal expansion between the core panel 11 and the silicon wafer or silicon chip, and can effectively suppress the problem of breakage at the connection between the substrate structure and the silicon wafer or silicon chip due to thermal stress, thereby improving the reliability of the chip and, consequently, the reliability of the packaging structure. Furthermore, the low coefficient of thermal expansion of the core panel 11 material helps reduce the overall warpage of the substrate structure when it is in a high-temperature environment, effectively suppressing excessive warpage or breakage, and further improving the reliability of the substrate structure.

[0030] It should be noted that the core panel 11 is made of metal. In order to meet the requirements for one or both of the coefficient of thermal expansion and Young's modulus, metal materials offer more options.

[0031] In this embodiment, the material of the core panel 11 includes one or more of molybdenum and nickel-iron alloys. Both molybdenum and nickel-iron alloys have low coefficients of thermal expansion, which is beneficial for reducing the coefficient of thermal expansion of the core panel 11. In addition, molybdenum and nickel-iron alloys also have high Young's modulus, which is beneficial for improving the stiffness of the core panel 11.

[0032] As an example, the core panel 11 is made of nickel-iron alloy. Nickel-iron alloy has a high thermal conductivity, which is beneficial to further improve the thermal conductivity of the core panel 11, quickly transfer the heat generated by the chip operation, and effectively suppress the damage to the substrate structure and chip caused by local overheating. This is beneficial to further improve the reliability and heat dissipation performance of the packaging structure. Moreover, the nickel-iron alloy manufacturing process is mature and the material cost is low, which is beneficial to reduce the manufacturing cost of the core panel 11.

[0033] As an example, nickel-iron alloys may include one or both of Inwar and Alloy42.

[0034] The conductive pillar 21 is used to realize the electrical interconnection of the substrate structure.

[0035] refer to Figure 1 In this embodiment, the conductive pillar 21 is embedded in and penetrates the core panel 11, realizing the vertical conductivity function on both sides of the core panel 11, thereby shortening the signal transmission path of the substrate structure, thereby reducing the transmission delay of the substrate structure, and thus helping to improve the performance of the semiconductor device.

[0036] In this embodiment, the diameter of the conductive post 21 is between 50 micrometers and 500 micrometers. The diameter of the conductive post 21 should not be too large or too small. If the diameter is less than 50 micrometers, the aspect ratio of the conductive post 21 will be too large, which will easily reduce the structural stiffness of the conductive post 21. If the diameter is greater than 500 micrometers, it will easily cause additional material waste and lead to a reduction in interconnect density. In other embodiments, the diameter of the conductive post can also use other numerical ranges.

[0037] In this embodiment, the conductive pillar 21 is made of a metallic material. Metallic materials have good conductivity, reducing the difficulty of current transmission through the conductive pillar 21 and improving its efficiency, thereby enhancing the conductivity of the substrate structure. Furthermore, metallic materials have high rigidity, which improves the structural reliability of the conductive pillar 21, effectively suppressing unexpected deformation or breakage and further enhancing the reliability of the substrate structure.

[0038] Specifically, the conductive pillar 21 is made of one or more of copper, silver, gold, and aluminum. Compared to other metals, copper, silver, gold, and aluminum have lower resistivity, which helps reduce signal transmission loss in the conductive pillar 21, thereby improving the signal transmission efficiency of the conductive pillar 21 and thus improving the working performance of the substrate structure. Copper, silver, gold, and aluminum have higher thermal conductivity, which helps to further improve the thermal conductivity of the conductive pillar 21, thereby improving the thermal conductivity of the substrate structure.

[0039] As an example, the conductive pillar 21 is made of copper. Copper has good electrical and thermal conductivity, and its manufacturing process is mature and the material cost is low, which helps to reduce the manufacturing cost of the substrate structure.

[0040] It should be noted that the conductivity of the material of the conductive pillar 21 is higher than that of the material of the core panel 11. Current preferentially flows through the path with lower resistivity. The resistivity of the material of the conductive pillar 21 is lower than that of the material of the core panel 11, which is beneficial to concentrate the current in the conductive pillar 21 for transmission, effectively suppressing current dissipation, thereby improving the signal transmission efficiency of the substrate structure and thus improving the performance of the packaging structure.

[0041] The first insulating layer 31 is used to isolate the conductive pillar 21 from the core panel 11.

[0042] A first insulating layer 31 is located between the sidewall of the conductive pillar 21 and the core panel 11. The first insulating layer 31 surrounds and covers the sidewall of the conductive pillar 21 and exposes the end face of the conductive pillar 21. The first insulating layer 31 prevents the conductive pillar 21 from directly contacting the core panel 11, which helps to block the electrical connection between the conductive pillar 21 and the core panel 11, thereby effectively suppressing short circuits in the substrate structure and improving the reliability of the substrate structure.

[0043] It should be noted that when the core panel 11 is in a grounded state, the first insulating layer 31 covers the surface of the core panel 11, which helps to achieve electromagnetic shielding function, reduce external signal interference, and thus help to improve the integrity of signal transmission of the substrate structure. At the same time, the first insulating layer 31 can constrain the electromagnetic field distribution of the substrate structure, which helps to reduce the signal transmission loss of the substrate structure, and further helps to improve the reliability of the substrate structure.

[0044] The first insulating layer 31 exposes the end face of the conductive post 21 in the extending direction so that the core panel 11 can achieve vertical conductivity.

[0045] It should be noted that during the fabrication of the substrate structure, after forming through-holes in the core panel 11, conductive pillars 21 are disposed in the through-holes. A gap exists between the sidewall of the conductive pillar 21 and the sidewall of the through-hole, and the first insulating layer 31 is located within this gap. If the lateral thickness of the first insulating layer 31 is too small, the gap width may be too small, resulting in insufficient filling of the gap by the first insulating layer 31. This could lead to the first insulating layer 31 not adequately surrounding and covering the sidewall of the conductive pillar 21, or it could reduce the insulating effect of the first insulating layer 31, thereby increasing the probability of a short circuit between the conductive pillar 21 and the core panel 11. Therefore, in some embodiments, the lateral thickness of the first insulating layer 31 is greater than 10 micrometers.

[0046] It should be noted that the horizontal direction is parallel to the top or bottom surface of the core panel 11.

[0047] Specifically, the lateral thickness of the first insulating layer 31 is 10 micrometers to 30 micrometers. By setting the lateral thickness of the first insulating layer 31 within the above range, it is beneficial to ensure the isolation function of the first insulating layer 31 while ensuring the density of the conductive pillars 21.

[0048] In this embodiment, the material of the first insulating layer 31 includes epoxy molding compound, fluorinated resin or polyimide.

[0049] As an example, the material of the first insulating layer 31 is epoxy molding compound. Epoxy molding compound has the characteristic of low viscosity. During the formation of the first insulating layer 31, it is beneficial to improve the filling of the first insulating layer 31 between the sidewall of the conductive post 21 and the sidewall of the core panel 11, reduce the porosity of the first insulating layer 31, and effectively suppress the problem of short circuit between the conductive post 21 and the core panel 11.

[0050] It should be noted that epoxy molding compound has good flexibility and stress buffering capacity, which is beneficial to improving the seamless bonding effect between the first insulating layer 31 and the conductive post 21. Moreover, when the conductive post 21 is assembled into the core panel 11 by insertion, the use of epoxy molding compound also helps to improve the matching degree of the assembly process between the first insulating layer 31 and the conductive post 21. In addition, the use of epoxy molding compound also helps to improve the process compatibility of the first insulating layer 31 and reduce costs.

[0051] In this embodiment, the core panel 11 includes a first surface 12 and a second surface 13 disposed opposite to each other; the substrate structure further includes: a second insulating layer 14 covering the first surface 12 of the core panel 11; and a third insulating layer 15 covering the second surface 13 of the core panel 11.

[0052] Both the second insulating layer 14 and the third insulating layer 15 are used to isolate the core panel 11 from the circuit structures in other components, thereby suppressing short circuit problems in the substrate structure and improving the reliability of the substrate structure. Furthermore, under heat, the second insulating layer 14 can buffer the expansion of the core panel 11, reducing the impact of thermal expansion of external structures on the core panel 11 and effectively suppressing the problem of breakage between the core panel 11 and other components, thereby improving the reliability of the substrate structure.

[0053] In this embodiment, the conductive post 21 also penetrates the second insulating layer 14 and the third insulating layer 15, and in the extending direction of the conductive post 21, the first end face of the conductive post 21 is exposed in the second insulating layer 14, and the second end face of the conductive post 21 is exposed in the third insulating layer 15.

[0054] The second insulating layer 14 and the third insulating layer 15 expose the first end face and the second end face of the conductive post 21, respectively, so that the conductive post 21 can be electrically connected to the circuit structure on the first surface 12 or the second surface 13 of the core panel 11.

[0055] In this embodiment, the first insulating layer 31 is also located between the sidewall of the conductive post 21 and the second insulating layer 14, and between the sidewall of the conductive post 21 and the third insulating layer 15, thereby improving the coverage integrity of the first insulating layer 31 over the conductive post 21, effectively suppressing short circuits between the conductive post 21 and the core panel 11, and also helping to suppress unwanted short circuits between the conductive post 21 and other circuit structures.

[0056] In this embodiment, the second insulating layer 14 includes a prepreg, a built-up dielectric film, or a polyimide layer, and the third insulating layer 15 includes a prepreg, a built-up dielectric film, or a polyimide layer.

[0057] As an example, both the second insulating layer 14 and the third insulating layer 15 are prepregs. These prepregs are typically composites of low-polarity resin and low-loss reinforcing fibers, exhibiting good compatibility with the material of the core panel 11. This improves the matching degree of the thermal expansion coefficients between the second insulating layer 14, the third insulating layer 15, and the core panel 11. Furthermore, the prepregs have good density, which helps improve the dielectric properties of the second insulating layer 14 and the third insulating layer 15, reducing signal loss during transmission in the substrate structure and thus enhancing the integrity of signal transmission in the substrate structure.

[0058] In this embodiment, the substrate structure further includes a multilayer structure 40, which is located on the second insulating layer 14 on the first side 12 of the core panel 11 and on the third insulating layer 15 on the second side 13. The conductive wiring 41 in the multilayer structure 40 is electrically connected to the conductive pillar 21.

[0059] The multilayer structure 40 is used to realize the electrical connection and signal transmission between the substrate structure and the external circuit.

[0060] Specifically, the stacked structure 40 includes a third side (not shown) facing the core panel 11 and a fourth side (not shown) facing away from the core panel 11. The stacked structure 40 has conductive wiring 41. The conductive wiring 41 on the third side is connected to the conductive post 21, and the conductive wiring 41 on the fourth side is exposed by the stacked structure 40, which facilitates connection with external circuit structures, thereby facilitating the electrical connection between the substrate structure and external circuits.

[0061] It should be noted that the multilayer structure 40 also includes a fourth insulating layer 42, in which conductive wiring 41 is located. The fourth insulating layer 42 is used to isolate adjacent conductive wiring 41, thereby effectively suppressing the problem of short circuits between conductive wiring 41 and improving the reliability of the substrate structure.

[0062] As an example, the layered structure 40 is ABF (Ajinomoto Build-up Film).

[0063] It should be noted that the laminated structure 40 also includes a solder mask layer 43, which is disposed on the fourth insulating layer 42, and the surface of the solder mask layer 43 facing away from the core panel 11 is the fourth surface.

[0064] The solder resist layer 43 covers the non-soldering areas of the substrate structure, thereby preventing short circuits caused by solder bridging.

[0065] Accordingly, this disclosure provides a packaging structure, which includes a substrate structure according to this disclosure. Since the substrate structure has high reliability and good heat dissipation performance, it is beneficial to improve the reliability and heat dissipation performance of the packaging structure.

[0066] In some embodiments, the packaging structure may further include a chip located on a substrate structure, the chip being electrically connected to the substrate structure.

[0067] In some embodiments, the packaging structure may further include passive components located on the substrate structure, the passive components being electrically connected to the substrate structure.

[0068] Accordingly, this disclosure also provides a method for forming a substrate structure. Figure 2 This is a flowchart of an embodiment of the method for forming the substrate structure disclosed herein. Figures 3 to 12 This is a schematic diagram of the structure corresponding to each step in one embodiment of the method for forming the substrate structure disclosed herein.

[0069] refer to Figure 2 and in conjunction with references Figure 3 Step S1 is executed, providing a core panel 11, wherein the core panel 11 is made of a metal material.

[0070] The core panel 11 serves as the central carrier layer of the substrate structure, providing a technological basis for forming the substrate structure.

[0071] In this embodiment, the core panel 11 is made of a metallic material. Metallic materials have high rigidity, which helps improve the mechanical strength and impact resistance of the core panel 11. Furthermore, metallic materials have good thermal conductivity, which helps improve the reliability and heat dissipation performance of the substrate structure, and consequently, improves the reliability and performance of the packaging structure.

[0072] It should be noted that the core panel 11 is used to embed conductive pillars. Therefore, in this embodiment, the core panel 11 satisfies one or more of the following: the Young's modulus of the material of the core panel 11 is greater than 100 GPa; the coefficient of thermal expansion of the material of the core panel 11 is less than 10 ppm / K.

[0073] The Young's modulus of the material of the core panel 11 is greater than 100 GPa, which makes the Young's modulus of the material of the core panel 11 high. This is beneficial to improve the stiffness of the core panel 11 and effectively suppress the deformation of the core panel 11 caused by excessive internal stress due to excessive panel size, too many wiring layers, or heating and cooling processes during manufacturing. This allows the stiffness of the core panel 11 to meet the requirements of setting more wiring layers and increasing size, thereby meeting the requirements of different packaging processes.

[0074] The core panel 11's material has a coefficient of thermal expansion of less than 10 ppm / K, resulting in a low coefficient of thermal expansion. This improves the matching degree between the core panel 11's coefficient of thermal expansion and that of the silicon wafer or silicon chip, reducing thermal stress caused by the large difference in coefficients of thermal expansion between the core panel 11 and the silicon wafer or silicon chip. Consequently, it effectively suppresses the problem of breakage at the connection between the substrate structure and the silicon wafer or silicon chip due to thermal stress, thereby improving chip reliability and, consequently, the reliability of the packaging structure. Furthermore, the low coefficient of thermal expansion of the core panel 11's material helps reduce the overall warpage of the substrate structure when it is in a high-temperature environment, effectively suppressing excessive warpage or breakage, and further improving the reliability of the substrate structure.

[0075] It should be noted that the core panel 11 is made of metal. In order to meet the requirements for one or both of the coefficient of thermal expansion and Young's modulus, metal materials offer more options.

[0076] In this embodiment, the material of the core panel 11 includes one or more of molybdenum and nickel-iron alloys. Both molybdenum and nickel-iron alloys have low coefficients of thermal expansion, which is beneficial for reducing the coefficient of thermal expansion of the core panel 11. In addition, molybdenum and nickel-iron alloys also have high Young's modulus, which is beneficial for improving the stiffness of the core panel 11.

[0077] As an example, the core panel 11 is made of nickel-iron alloy. Nickel-iron alloy has a high thermal conductivity, which is beneficial to further improve the thermal conductivity of the core panel 11, quickly transfer the heat generated by the chip operation, and effectively suppress the damage to the substrate structure and chip caused by local overheating. This is beneficial to further improve the reliability and heat dissipation performance of the packaging structure. Moreover, the nickel-iron alloy manufacturing process is mature and the material cost is low, which is beneficial to reduce the manufacturing cost of the core panel 11.

[0078] As an example, nickel-iron alloys may include one or both of Inwar and Alloy42.

[0079] In this embodiment, the core panel 11 includes a first surface 12 and a second surface 13 arranged opposite to each other.

[0080] Continue to refer to Figure 2 and Figure 3 After providing the core panel 11, the forming method further includes performing step S2, forming a second insulating layer 14 on the first surface 12 of the core panel 11, and forming a third insulating layer 15 on the second surface 13 of the core panel 11.

[0081] Both the second insulating layer 14 and the third insulating layer 15 are used to isolate the core panel 11 from the circuit structures in other components, thereby suppressing short circuit problems in the substrate structure and improving the reliability of the substrate structure. Furthermore, under heat, the second insulating layer 14 can buffer the expansion of the core panel 11, reducing the impact of thermal expansion of external structures on the core panel 11 and effectively suppressing the problem of breakage between the core panel 11 and other components, thereby improving the reliability of the substrate structure.

[0082] In this embodiment, the process of forming the second insulating layer 14 on the first surface 12 of the core panel 11 includes a lamination process, a scraping process, a screen printing process, or a spraying process, and the process of forming the third insulating layer 15 on the second surface 13 of the core panel 11 includes a lamination process, a scraping process, a screen printing process, or a spraying process.

[0083] As an example, the process for forming the second insulating layer 14 is a lamination process. This lamination process is performed under high temperature and high pressure, causing the second insulating layer 14 to fill the grooves, gaps, and hole walls on the first surface 12 of the core panel 11. This effectively suppresses voids at the contact surface between the second insulating layer 14 and the first surface 12 of the core panel 11, thereby improving the interlayer bonding force between the second insulating layer 14 and the core panel 11, and consequently improving the reliability of the substrate structure. Furthermore, the lamination process is mature and applicable to various materials, which helps reduce rework or scrap losses and lowers the manufacturing cost of the substrate structure. In other embodiments, the process for forming the second insulating layer on the first surface of the core panel can also employ a scraping process, a screen printing process, or a spraying process.

[0084] As an example, the process for forming the third insulating layer 15 is a lamination process, thereby improving the interlayer bonding force between the third insulating layer 15 and the core panel 11.

[0085] In this embodiment, the second insulating layer 14 includes a prepreg, a laminated insulating film, or a polyimide layer, and the third insulating layer 15 includes a prepreg, a laminated insulating film, or a polyimide layer.

[0086] As an example, both the second insulating layer 14 and the third insulating layer 15 are prepregs. These prepregs are typically composites of low-polarity resin and low-loss reinforcing fibers, exhibiting good compatibility with the material of the core panel 11. This improves the matching degree of the thermal expansion coefficients between the second insulating layer 14, the third insulating layer 15, and the core panel 11. Furthermore, the prepregs have good density, which helps improve the dielectric properties of the second insulating layer 14 and the third insulating layer 15, reducing signal loss during transmission in the substrate structure and thus enhancing the integrity of signal transmission in the substrate structure.

[0087] refer to Figure 2 and in conjunction with references Figure 4 Step S3 is executed to form a through hole 201 in the core panel 11, the through hole 201 penetrating the core panel 11.

[0088] The through-hole 201 is used to provide space for the subsequent formation of the conductive pillar 21 in the core panel 11.

[0089] In this embodiment, after the second insulating layer 14 is formed on the first surface 12 of the core panel 11 and the third insulating layer 15 is formed on the second surface 13 of the core panel 11, the through hole 201 is formed. Therefore, the through hole 201 penetrates both the second insulating layer 14 and the third insulating layer 15.

[0090] It should be noted that forming the second insulating layer 14 and the third insulating layer 15 first, and then forming the through hole 201, while retaining the second insulating layer 14 and the third insulating layer 15 in the remaining area on the side of the through hole 201, helps to reduce the complexity of the process; moreover, the second insulating layer 14 and the third insulating layer 15 can continue to protect the core panel 11 during the formation of the through hole 201.

[0091] In this embodiment, the process of forming through holes 201 in the core panel 11 includes mechanical drilling or laser drilling.

[0092] When the core panel 11 is made of metal, mechanical drilling or laser drilling is used to process the core panel 11, which reduces the processing difficulty of the core panel 11 and avoids the glass cracking problem commonly seen in glass substrate manufacturing.

[0093] As an example, the process for forming the through-hole 201 in the core panel 11 is laser drilling. Laser drilling can produce through-holes 201 with smaller diameters, which is beneficial for the substrate structure to meet higher density interconnect requirements. Furthermore, laser drilling allows for precise control of the drilling position, improving the positional accuracy of the through-hole 201 and thus enhancing the reliability of the substrate structure. In addition, laser drilling can achieve high-speed drilling, which, while ensuring drilling positional accuracy, improves the efficiency of forming the through-hole 201, thereby increasing the fabrication efficiency of the substrate structure.

[0094] refer to Figure 2 and in conjunction with references Figures 5 to 7 Execute step S5, in the through hole 201 (e.g. Figure 4 A conductive post 21 is provided in the through hole 201 (as shown), and a gap 211 is provided between the sidewall of the conductive post 21 and the sidewall of the through hole 201 (as shown). Figure 7 (as shown), and the gap 211 surrounds the conductive post 21.

[0095] The conductive pillar 21 is used to realize the electrical interconnection of the substrate structure.

[0096] The conductive post 21 is embedded in and penetrates the core panel 11, realizing the vertical conductivity function on both sides of the core panel 11, thereby shortening the signal transmission path of the substrate structure, reducing the transmission delay of the substrate structure, and thus improving the performance of the semiconductor device.

[0097] It should be noted that in this embodiment, after forming a through hole 201 in the core panel 11, a conductive post 21 is placed in the through hole 201. Compared with the scheme of forming an annular groove in the core panel and simultaneously forming a conductive post surrounded by the sidewalls of the annular groove, forming the through hole 201 is less difficult. Moreover, the conductive post 21 is placed in the core panel 11 by assembly, which allows for flexible selection of the materials of the core panel 11 and the conductive post 21 as needed, which is beneficial to achieve a material difference between the conductive post 21 and the core panel 11.

[0098] In this embodiment, the diameter of the conductive post 21 is between 50 micrometers and 500 micrometers. The diameter of the conductive post 21 should not be too large or too small. If the diameter is less than 50 micrometers, the aspect ratio of the conductive post 21 will be too large, which will easily reduce the structural stiffness of the conductive post 21. If the diameter is greater than 500 micrometers, it will easily cause additional material waste and lead to a reduction in interconnect density. In other embodiments, the diameter of the conductive post can also use other numerical ranges.

[0099] In this embodiment, the conductive pillar 21 is made of a metallic material. Metallic materials have good conductivity, reducing the difficulty of current transmission through the conductive pillar 21 and improving its efficiency, thereby enhancing the conductivity of the substrate structure. Furthermore, metallic materials have high rigidity, which improves the structural reliability of the conductive pillar 21, effectively suppressing unexpected deformation or breakage and further enhancing the reliability of the substrate structure.

[0100] Specifically, the conductive pillar 21 is made of one or more of copper, silver, gold, and aluminum. Compared to other metals, copper, silver, gold, and aluminum have lower resistivity, which helps reduce signal transmission loss in the conductive pillar 21, thereby improving the signal transmission efficiency of the conductive pillar 21 and thus improving the working performance of the substrate structure. Copper, silver, gold, and aluminum have higher thermal conductivity, which helps to further improve the thermal conductivity of the conductive pillar 21, thereby improving the thermal conductivity of the substrate structure.

[0101] As an example, the conductive pillar 21 is made of copper. Copper has good electrical and thermal conductivity, and its manufacturing process is mature and the material cost is low, which helps to reduce the manufacturing cost of the substrate structure.

[0102] It should be noted that the conductivity of the material of the conductive pillar 21 is higher than that of the material of the core panel 11. Current preferentially flows through the path with lower resistivity. The resistivity of the material of the conductive pillar 21 is lower than that of the material of the core panel 11, which is beneficial to concentrate the current in the conductive pillar 21 for transmission, effectively suppressing current dissipation, thereby improving the signal transmission efficiency of the substrate structure and thus improving the performance of the packaging structure.

[0103] It should also be noted that in this embodiment, the number of conductive pillars 21 corresponds one-to-one with the number of through holes 201.

[0104] In this embodiment, the height of the conductive post 21 is greater than the depth of the through hole 201, thereby providing a margin for subsequent grinding of the conductive post 21 to improve the flatness of the plane containing the end face of the conductive post 21. In other embodiments, the height of the conductive post may be equal to or less than the depth of the through hole, as needed.

[0105] In this embodiment, the through hole 201 penetrates both the second insulating layer 14 and the third insulating layer 15. Correspondingly, in the step of setting the conductive post 21 in the through hole 201, the gap 211 extends from the surface of the second insulating layer 14 facing away from the core panel 11 to the surface of the third insulating layer 15 facing away from the core panel 11.

[0106] In this embodiment, in the extending direction of the conductive post 21, the first end face of the conductive post 21 is exposed in the second insulating layer 14, and the second end face of the conductive post 21 is exposed in the third insulating layer 15.

[0107] The second insulating layer 14 and the third insulating layer 15 expose the first end face and the second end face of the conductive post 21, respectively, so that the conductive post 21 can be electrically connected to the circuit structure on the first surface 12 or the second surface 13 of the core panel 11.

[0108] A gap 211 is provided between the sidewall of the conductive post 21 and the sidewall of the through hole 201, and the gap 211 is used to provide space for the formation of the first insulating layer.

[0109] It should be noted that, in the step of setting the conductive post 21 in the through hole 201, if the lateral width of the gap 211 is too small, the first insulating layer 31 may not fill the gap 211 sufficiently, which may result in the first insulating layer 31 not adequately surrounding and covering the sidewall of the conductive post 21, or may reduce the isolation effect of the first insulating layer 31, thereby increasing the probability of a short circuit between the conductive post 21 and the core panel 11. Therefore, in some embodiments, the lateral width of the gap 211 is greater than 10 micrometers.

[0110] It should be noted that the through hole 201 extends through the top and bottom surfaces of the core panel 11, parallel to the top or bottom surface of the core panel 11.

[0111] Specifically, the lateral width of the gap 211 is between 10 micrometers and 30 micrometers. By setting the lateral width of the gap 211 within the above range, it is beneficial to ensure the isolation function of the first insulating layer 31 while ensuring the density of the conductive pillars 21.

[0112] refer to Figure 2 and in conjunction with references Figure 5 and Figure 6 In some embodiments, before the conductive post 21 is provided in the through hole 201, the forming method further includes: performing step S4 to provide a conductive structure 20 (such as...). Figure 6 As shown in the figure, the conductive structure 20 includes a base 22 and a conductive post 21 protruding from the base 22.

[0113] By setting the conductive post 21 on the base 22, it is easy to set the conductive post 21 in the through hole 201 of the core panel 11.

[0114] In some embodiments, the step of providing the conductive structure 20 includes: referencing Figure 5 Provides conductive panel 25; Reference Figure 6 The conductive panel 25 with a partial thickness of patterned shape forms conductive pillars 21 protruding from the conductive panel 25 with the remaining thickness, and the conductive panel 25 with the remaining thickness serves as a base 22.

[0115] The conductive panel 25 provides a process basis for the subsequent formation of the conductive pillar 21.

[0116] Therefore, in this embodiment, the conductive panel 25 is made of a metal material, and correspondingly, the conductive pillar 21 formed subsequently is also made of a metal material.

[0117] For a description of the material of the conductive panel 25, please refer to the aforementioned description of the material of the conductive post 21, which will not be repeated here.

[0118] It should be noted that forming the conductive pillars 21 by patterning the conductive panel 25 helps to suppress or avoid the problem of void defects inside the conductive pillars 21.

[0119] In this embodiment, the process of the conductive panel 25 with the patterned portion thickness includes laser etching or electron beam etching, which helps to improve the dimensional accuracy of the conductive pillar 21.

[0120] As an example, the conductive panel 25 with a patterned portion thickness is manufactured using a laser etching process. This laser etching process offers higher precision etching dimensions, which improves the etching accuracy of the conductive panel 25, resulting in conductive pillars 21 with smaller diameters, thus meeting the higher-density interconnect requirements of the substrate structure. Furthermore, the laser etching process improves the precision of patterning the conductive panel 25, reduces process errors, and enhances the reliability of the substrate structure. In addition, using laser etching for patterning the conductive panel 25 eliminates cumbersome steps such as adhesive application and exposure, simplifying the patterning process and improving the efficiency of patterning the conductive panel 25.

[0121] Accordingly, refer to Figure 7 In some embodiments, the step of setting the conductive post 21 in the through hole 201 includes: embedding the conductive post 21 into the through hole 201 from the first side of the core panel 11, and the base 22 sealing the end of the through hole 201 located on the first side.

[0122] It should be noted that either side of the core panel 11 can be used as the first side, and the other side of the core panel 11 can be used as the second side.

[0123] In this embodiment, the height of the conductive post 21 is greater than the depth of the through hole 201. Therefore, in the through hole 201 (e.g., Figure 4After the conductive post 21 is provided in the diagram, at least one end of the conductive post 21 protrudes out of the through hole 201, that is, a part of the conductive post 21 is located outside the through hole 201.

[0124] refer to Figure 2 and in conjunction with references Figures 8 to 9 Step S6 is executed, in which a first insulating layer 31 is formed in the gap 211. The first insulating layer 31 surrounds and covers the sidewall of the conductive post 21 and exposes the end face of the conductive post 21.

[0125] The first insulating layer 31 is used to isolate the conductive pillar 21 from the core panel 11.

[0126] A first insulating layer 31 is located between the sidewall of the conductive pillar 21 and the core panel 11. The first insulating layer 31 surrounds and covers the sidewall of the conductive pillar 21 and exposes the end face of the conductive pillar 21. The first insulating layer 31 prevents the conductive pillar 21 from directly contacting the core panel 11, which helps to block the electrical connection between the conductive pillar 21 and the core panel 11, thereby effectively suppressing short circuits in the substrate structure and improving the reliability of the substrate structure. Furthermore, the first insulating layer 31 helps to reduce parasitic capacitance, thereby improving the signal transmission integrity of the substrate structure and improving the performance of semiconductor devices.

[0127] The first insulating layer 31 exposes the end face of the conductive post 21 in the extending direction so that the core panel 11 can achieve vertical conductivity.

[0128] It should be noted that the first insulating layer 31 is also located between the side wall of the conductive post 21 and the second insulating layer 14, and between the side wall of the conductive post 21 and the third insulating layer 15, thereby improving the coverage integrity of the first insulating layer 31 over the conductive post 21, effectively suppressing short circuits between the conductive post 21 and the core panel 11, and also helping to suppress unwanted short circuits between the conductive post 21 and other circuit structures.

[0129] In this embodiment, the material of the first insulating layer 31 includes epoxy molding compound, fluorinated resin or polyimide.

[0130] As an example, the material of the first insulating layer 31 is epoxy molding compound. Epoxy molding compound has the characteristic of low viscosity, which helps to improve the filling performance of the first insulating layer 31 in the gap 211 during the formation of the first insulating layer 31, reduce the porosity of the first insulating layer 31, and effectively suppress the problem of short circuit between the conductive post 21 and the core panel 11.

[0131] It should be noted that epoxy molding compound has good flexibility and stress buffering capacity, which is beneficial to improving the seamless bonding effect between the first insulating layer 31 and the conductive post 21. Furthermore, it also helps to improve the compatibility of the assembly processes of the first insulating layer 31 and the conductive post 21. In addition, using epoxy molding compound also helps to improve the process compatibility of the first insulating layer 31 and reduce costs.

[0132] In this embodiment, the conductive post 21 is embedded into the through hole 201 from the first side of the core panel 11, and the base 22 seals the end of the through hole 201 located on the first side. Correspondingly, in the step of forming the first insulating layer 31 in the gap 211, the first insulating layer 31 is formed in the gap 211 via the second side of the core panel 11. The second side and the first side are opposite sides of the core panel 11.

[0133] refer to Figure 8 In some embodiments, the step of forming a first insulating layer 31 in the gap 211 includes forming an insulating material layer 30 in the gap 211, the insulating material layer 30 also covering the end face of the conductive post 21.

[0134] The insulating material layer 30 provides a process basis for the subsequent formation of the first insulating layer 31.

[0135] In this embodiment, the material of the insulating material layer 30 includes epoxy molding compound, fluorinated resin or polyimide, and correspondingly the material of the first insulating layer 31 formed subsequently includes epoxy molding compound, fluorinated resin or polyimide.

[0136] As an example, the insulating material layer 30 is made of epoxy molding compound, which in turn makes the material of the subsequently formed first insulating layer 31 epoxy molding compound.

[0137] refer to Figure 9 The step of forming the first insulating layer 31 in the gap 211 further includes: thinning the insulating material layer 30 to expose the conductive post 21, with the remaining insulating material layer 30 serving as the first insulating layer 31.

[0138] refer to Figure 2 And continue to refer to Figure 9 In this embodiment, after the first insulating layer 31 is formed and before the base 22 is subsequently removed, the forming method further includes: performing step S7, grinding the conductive post 21 on the first side of the core panel 11 to remove the portion of the conductive post 21 that protrudes from the through hole 201.

[0139] Grinding the conductive post 21 helps to ensure that the end face of the conductive post 21 is flush with the side of the second insulating layer 14 away from the core panel 11 in a direction parallel to the first surface of the core panel 11 after grinding. This helps to improve the surface flatness of the substrate structure, thereby improving the reliability of the substrate structure.

[0140] refer to Figure 2 and in conjunction with references Figure 10 In this embodiment, after the conductive post 21 is ground on the first side of the core panel 11, the forming method further includes: performing step S8 to remove the base 22.

[0141] Remove the base 22 located on the second side of the core panel 11 to expose the end face of the conductive post 21 and make the conductive posts 21 spaced apart from each other.

[0142] In this embodiment, the process of removing the base 22 includes a grinding process or a wet etching process.

[0143] As an example, the process of removing the base 22 is a grinding process. The grinding process can reduce the surface undulation of the end face of the conductive post 21 after grinding, which is beneficial to improving the flatness of the end face of the conductive post 21 and further improving the flatness of the substrate structure.

[0144] refer to Figure 2 and in conjunction with references Figure 11 In this embodiment, after removing the base 22, the forming method further includes: performing step S9, forming a multilayer structure 40 on the second insulating layer 14 on the first side 12 of the core panel 11 and on the third insulating layer 14 on the second side 13, wherein the conductive wiring 41 in the multilayer structure 40 is electrically connected to the conductive post 21.

[0145] The multilayer structure 40 is used to realize the electrical connection and signal transmission between the substrate structure and the external circuit.

[0146] Specifically, the stacked structure 40 includes a third side (not shown) facing the core panel 11 and a fourth side (not shown) facing away from the core panel 11. The stacked structure 40 has conductive wiring 41. The conductive wiring 41 on the third side is connected to the conductive post 21, and the conductive wiring 41 on the fourth side is exposed by the stacked structure 40, which facilitates connection with external circuit structures, thereby facilitating the electrical connection between the substrate structure and external circuits.

[0147] refer to Figure 11The laminated structure 40 further includes a fourth insulating layer 42, which is disposed on the second insulating layer 14 on one side of the first surface 12 of the core panel 11 and on the third insulating layer 15 on one side of the second surface 13 of the core panel 11.

[0148] The fourth insulating layer 42 is used to isolate adjacent conductive wires 41.

[0149] The fourth insulating layer 42 prevents adjacent conductive wirings 41 from being too close or directly contacting each other, effectively suppressing the problem of short circuits between conductive wirings 41, and helping to improve the reliability of the substrate structure.

[0150] As an example, the fourth insulating layer 42 is ABF (Ajinomoto, Build-up Film).

[0151] Continue to refer to Figure 11 The base structure 40 also includes a solder resist layer 43, which is disposed on the fourth insulating layer 42, and the surface of the solder resist layer 43 facing away from the core panel 11 is the fourth surface.

[0152] The solder resist layer 43 covers the non-soldering areas of the substrate structure, thereby preventing short circuits caused by solder bridging.

[0153] refer to Figure 2 and in conjunction with references Figure 12 In this embodiment, the core panel 11 includes multiple substrate unit regions 100. Therefore, after forming the multilayer structure 40, the forming method further includes: performing step S10 to cut the multilayer structure 40, the second insulating layer 14, the third insulating layer 15 and the core panel 11 to separate each of the substrate unit regions 100.

[0154] It should be noted that the substrate structure of the present invention can be obtained by the formation method of the present invention, or by other formation methods.

[0155] While the above disclosure is provided, it is not limited thereto. Any person skilled in the art may make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure shall be determined by the scope defined in the claims.

Claims

1. A substrate structure, characterized in that, include: The core panel is made of metal. A conductive post is embedded in the core panel and penetrates the core panel. A first insulating layer is located between the sidewall of the conductive pillar and the core panel, the first insulating layer surrounding and covering the sidewall of the conductive pillar and exposing the end face of the conductive pillar.

2. The substrate structure as described in claim 1, characterized in that, The substrate structure satisfies one or more of the following: The Young's modulus of the material of the core panel is greater than 100 GPa; The coefficient of thermal expansion of the material of the core panel is less than 10 ppm / K.

3. The substrate structure as described in claim 1, characterized in that, The core panel is made of one or more of molybdenum, Invar alloy, and Invar 42 alloy.

4. The substrate structure as described in claim 1, characterized in that, The diameter of the conductive pillar is between 50 micrometers and 500 micrometers.

5. The substrate structure as described in claim 1, characterized in that, The conductive pillar is made of one or more of copper, silver, gold, and aluminum.

6. The substrate structure as described in claim 1, characterized in that, The lateral thickness of the first insulating layer is greater than 10 micrometers.

7. The substrate structure as described in claim 6, characterized in that, The lateral thickness of the first insulating layer is 10 micrometers to 30 micrometers.

8. The substrate structure as described in claim 1, characterized in that, The material of the first insulating layer includes epoxy molding compound, fluorinated resin or polyimide.

9. The substrate structure as described in claim 1, characterized in that, The core panel includes a first side and a second side arranged opposite to each other; The substrate structure further includes: a second insulating layer covering the first side of the core panel; and a third insulating layer covering the second side of the core panel. The conductive post also penetrates the second insulating layer and the third insulating layer, and in the extending direction of the conductive post, the first end face of the conductive post is exposed in the second insulating layer, and the second end face of the conductive post is exposed in the third insulating layer; The first insulating layer is also located between the sidewall of the conductive post and the second insulating layer, and between the sidewall of the conductive post and the third insulating layer.

10. The substrate structure as described in claim 9, characterized in that, The second insulating layer includes a prepreg, a laminated insulating film, or a polyimide layer, and the third insulating layer includes a prepreg, a laminated insulating film, or a polyimide layer.

11. The substrate structure as described in claim 10, characterized in that, The substrate structure further includes a multilayer structure located on the second insulating layer on one side of the first side of the core panel and on the third insulating layer on one side of the second side, respectively, wherein the conductive wiring in the multilayer structure is electrically connected to the conductive pillar.

12. A packaging structure, characterized in that, Includes the substrate structure as described in any one of claims 1 to 11.

13. A method for forming a substrate structure, characterized in that, include: A core panel is provided, wherein the core panel is made of a metal material; A through-hole is formed in the core panel, the through-hole penetrating the core panel. A conductive post is provided in the through hole, and there is a gap between the sidewall of the conductive post and the sidewall of the through hole, and the gap surrounds the conductive post; A first insulating layer is formed in the gap, the first insulating layer surrounding and covering the sidewall of the conductive post and exposing the end face of the conductive post.

14. The forming method as described in claim 13, characterized in that, Before setting the conductive post in the through hole, the forming method further includes: providing a conductive structure, the conductive structure including a base and a conductive post protruding from the base; The step of setting the conductive post in the through hole includes: embedding the conductive post into the through hole from a first side of the core panel, and the base sealing the end of the through hole located on the first side; In the step of forming a first insulating layer in the gap, the first insulating layer is formed in the gap via a second side of the core panel, wherein the second side and the first side are opposite sides of the core panel; After forming the first insulating layer, the forming method further includes removing the base.

15. The forming method as described in claim 14, characterized in that, The process for removing the base includes a grinding process or a wet etching process.

16. The forming method as described in claim 14, characterized in that, The steps for providing a conductive structure include: providing a conductive panel; The conductive panel with a portion of its thickness is patterned to form conductive pillars that protrude from the remaining thickness of the conductive panel, which serves as a base.

17. The forming method as described in claim 16, characterized in that, The process for the conductive panel with the patterned portion thickness includes laser etching or electron beam etching.

18. The forming method as described in claim 14, characterized in that, In the step of providing the conductive structure, the height of the conductive post is greater than the depth of the through hole; After forming the first insulating layer and before removing the base, the forming method further includes: grinding the conductive post on a first side of the core panel to remove the portion of the conductive post that protrudes from the through hole.

19. The forming method as described in claim 13, characterized in that, The process of forming through holes in the core panel includes mechanical drilling or laser drilling.

20. The forming method as described in claim 13, characterized in that, The step of forming a first insulating layer in the gap includes: forming an insulating material layer in the gap, the insulating material layer also covering the end face of the conductive post; thinning the insulating material layer to expose the conductive post, the remaining insulating material layer serving as the first insulating layer.

21. The forming method as described in claim 13, characterized in that, In the step of setting the conductive post in the through hole, the lateral width of the gap is greater than 10 micrometers.

22. The forming method as described in claim 13, characterized in that, In the step of setting the conductive post in the through hole, the diameter of the conductive post is 50 micrometers to 500 micrometers.

23. The forming method as described in claim 13, characterized in that, The core panel satisfies one or more of the following: The Young's modulus of the material of the core panel is greater than 100 GPa; The coefficient of thermal expansion of the material of the core panel is less than 10 ppm / K.

24. The forming method as described in claim 13, characterized in that, In the step of providing the core panel, the material of the core panel includes one or more of molybdenum, Invar alloy, and 42 alloy.

25. The forming method as described in claim 13, characterized in that, In the step of forming a first insulating layer in the gap, the material of the first insulating layer includes epoxy molding compound, fluorinated resin or polyimide.

26. The forming method as described in claim 13, characterized in that, The core panel includes a first side and a second side arranged opposite to each other; Before forming a through-hole in the core panel, the forming method further includes: forming a second insulating layer on a first surface of the core panel, and forming a third insulating layer on a second surface of the core panel; In the step of forming a through hole in the core panel, the through hole also penetrates the second insulating layer and the third insulating layer; In the step of setting the conductive post in the through hole, the gap extends from the surface of the second insulating layer facing away from the core panel to the surface of the third insulating layer facing away from the core panel.

27. The forming method as described in claim 26, characterized in that, The process of forming the second insulating layer on the first side of the core panel includes lamination, scraping, screen printing, or spraying; the process of forming the third insulating layer on the second side of the core panel includes lamination, scraping, screen printing, or spraying.

28. The forming method as described in claim 26, characterized in that, After forming the first insulating layer in the gap, the forming method further includes: forming a laminated structure on the second insulating layer on one side of the first surface of the core panel and on the third insulating layer on one side of the second surface, wherein the conductive wiring in the laminated structure is electrically connected to the conductive pillar.

29. The forming method as described in claim 28, characterized in that, In the step of providing the core panel, the core panel includes multiple substrate unit regions; After forming the multilayer structure, the forming method further includes cutting the multilayer structure, the second insulating layer, the third insulating layer and the core panel to separate the individual substrate unit regions.

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