Metamaterial with small size, light weight, large angle and stable phase
By introducing a metal short-circuit probe and a foam dielectric substrate into the metamaterial, the problems of large weight and large-angle reflection phase deterioration of the metamaterial were solved, achieving the effects of small size, lightweight and large-angle phase stability.
Patent Information
- Application Number
- CN202511303122.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-12
- Publication Date
- 2025-12-12
AI Technical Summary
Existing metamaterials have large unit periods and heavy weight in communication frequency bands, and their reflection phase deteriorates severely when electromagnetic waves are incident at large angles.
By introducing metal short-circuit probes and using foam dielectric substrates, a small-sized and lightweight metamaterial structure is constructed. Combined with the design of metal patterned layers and dielectric substrate layers, large-angle phase stabilization is achieved.
It achieves miniaturization and large-angle phase stabilization of metamaterials, reduces weight and expands application scenarios, and provides more precise array control and longer service life.
Smart Images
Figure CN121123647A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of electromagnetic communication and new artificial electromagnetic materials, and particularly relates to a small-size lightweight large-angle phase-stable metamaterial. BACKGROUND
[0002] Electromagnetic metamaterials have always been concerned because they can regulate electromagnetic waves, but there are technical problems such as large unit period under a communication frequency band, large weight of a metamaterial array surface, and serious deterioration of a reflection phase of the metamaterial under large-angle oblique incidence of electromagnetic waves. SUMMARY
[0003] Invention aims / technical problems : In view of the defects and technical problems in the prior art, the application provides a small-size lightweight large-angle phase-stable metamaterial, which introduces a metal short-circuit probe and uses a foam dielectric to replace a dielectric substrate to construct a structure meeting design requirements, so as to realize the functional requirements of lightweight, small size and large-angle phase stability, wherein the introduction of the metal short-circuit probe realizes the miniaturization and large-angle phase stability of the structure.
[0004] Technical scheme: In order to achieve the above technical purpose, the application realizes the following technical scheme: a small-size lightweight large-angle phase-stable metamaterial, comprising a unit structure arranged in a periodic array, the unit structure comprising a first dielectric substrate layer, a second dielectric substrate layer, a third dielectric substrate layer and a diode which are sequentially laminated, the inner layer of the first dielectric substrate layer being provided with a first metal pattern layer, the inner and outer layers of the third dielectric substrate layer being respectively provided with a second metal pattern layer and a third metal pattern layer, the second dielectric substrate layer being a foam layer,
[0005] The first metal pattern layer comprises two rectangular metal patches symmetrically distributed in a long-side-against-long-side mode with the center line of the unit structure as the symmetry axis, a gap is arranged between the two rectangular metal patches, the diode is arranged between the gap, the short side center of the rectangular metal patch is extended with a high-impedance bias line, and the tail end of the high-impedance bias line is further provided with a metal circular patch; a non-metal avoidance ring is further symmetrically arranged on the two rectangular metal patches;
[0006] The second metal pattern layer is an integral surface covering metal pattern layer, and the short-circuit loading probe is vertically connected between the second metal pattern layer and the first metal pattern layer, one end of the short-circuit loading probe is electrically connected with the second metal pattern layer, and the other end is arranged in the non-metal avoidance ring of the first metal pattern layer to realize the insulating connection with the first metal pattern layer;
[0007] The third metal pattern layer includes two symmetrically arranged fan-shaped filters and a bias line connected to the center of the fan-shaped filters. A metal pin is provided perpendicularly between the metal circular patch of the first metal pattern layer and the center of the fan-shaped filter as a feed line. The second metal pattern layer is provided with a non-metallic clearance ring to insulate the metal pin from passing through the second metal pattern layer.
[0008] Preferably, the unit structure is planar or curved.
[0009] Preferably, the unit structure is a square structure, and the arrangement period T of the structural unit array is obtained by the following formula.
[0010]
[0011] In the formula, c is the speed of light in vacuum, f0 is the center frequency, Er1 is the dielectric constant of the first dielectric substrate layer, h is the thickness of the second dielectric substrate layer, and θ is the correction factor.
[0012] Preferably, the arrangement period of the structural unit array is 0.2-0.3 times the center frequency wavelength.
[0013] Preferably, the dielectric substrate layer of the unit structure is made of PCB substrate, ITO conductive glass, or PET printed using CuMesh printing process.
[0014] Preferably, the radius of the fan-shaped filter is 0.2-0.3 times the center frequency wavelength.
[0015] Preferably, the second dielectric substrate layer is made of PMI foam with a thickness of 0.08-0.12 times the center frequency wavelength.
[0016] Beneficial effects: Compared with the prior art, the present invention has the following advantages:
[0017] (1) By introducing a metal short-circuit probe, the present invention achieves miniaturization of metamaterial structure, which can accommodate more units in the same area and achieve more precise array control.
[0018] (2) By introducing a metal short-circuit probe, this invention achieves large-angle phase stabilization of metamaterial structures, providing a wider range of application scenarios.
[0019] (3) The present invention uses a foam dielectric substrate, which effectively reduces the weight by 50%-70% compared with the traditional metamaterial structure laminated with PCB dielectric substrate, making installation and deployment more flexible.
[0020] (4) The diode is embedded in the PMI foam, and the dielectric substrate can protect the diode and extend the service life of the structure. Attached Figure Description
[0021] Figure 1 This is a schematic diagram of the structure of the small-sized, lightweight, large-angle phase-stable metamaterial described in this invention.
[0022] Figure 2 This is a schematic diagram of the structure of the first metal pattern layer of the present invention.
[0023] Figure 3 This is a schematic diagram of the structure of the second metal pattern layer of the present invention.
[0024] Figure 4 This is a schematic diagram of the structure of the third metal pattern layer described in this invention.
[0025] Figure 5 The diagram shows the phase result of the normal incident amplitude of the unit structure in the embodiment of the present invention, where: (a) amplitude in the off state; (b) amplitude in the on state; and (c) phase difference.
[0026] Figure 6 The diagram shows the amplitude and phase results of the unit structure obliquely incident along the direction Phi = 0° in the embodiment of the present invention, where: (a) schematic diagram of the unit; (b) amplitude in the off state; (c) amplitude in the on state; (d) phase difference.
[0027] Figure 7 The diagram shows the amplitude and phase results of the unit structure obliquely incident along the direction of Phi = 90° in the embodiment of the present invention, wherein: (a) schematic diagram of the unit; (b) amplitude in the off state; (c) amplitude in the on state; (d) phase difference.
[0028] In the figure, the first dielectric substrate layer 1, the first metal pattern layer 2, the second dielectric substrate layer 3, the second metal pattern layer 4, the third dielectric substrate layer 5, the third metal pattern layer 6, the short-circuit loading probe 7, the feed line 8, the diode 9, the rectangular metal patch 10, the high impedance bias line 11, the metal circular patch 12, the non-metallic clearance ring 13, the fan-shaped filter 14, the bias line 15, and the feed line 16 are all present. Detailed Implementation
[0029] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present invention or its application or use. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention. Unless otherwise specifically stated, the relative arrangement, expressions, and values of the components and steps set forth in these embodiments do not limit the scope of the present invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the accompanying drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.
[0030] For ease of description, spatial relative terms such as "above," "over," "on the upper surface of," "above," etc., are used here to describe the spatial positional relationship of a device or feature as shown in the figure with other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation besides the orientation of the device as described in the figure. For example, if the device in the figure is inverted, a device described as "above" or "above" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations).
[0031] like Figures 1-4 As shown, the small-sized, lightweight, large-angle phase-stable metamaterial of the present invention includes a unit structure arranged in a periodic array. The unit structure includes a first dielectric substrate layer, a second dielectric substrate layer, a third dielectric substrate layer, and a diode stacked sequentially. The inner layer of the first dielectric substrate layer has a first metal pattern layer. The inner and outer layers of the third dielectric substrate layer have second and third metal pattern layers, respectively. The second dielectric substrate layer is a foam layer.
[0032] The first metal pattern layer includes two rectangular metal patches symmetrically distributed along their long sides with the center line of the unit structure as the axis of symmetry. A gap is provided between the two rectangular metal patches, and the diode is disposed between the gap. A high-impedance bias line extends from the center of the short side of each rectangular metal patch, and a circular metal patch is respectively provided at the end of the high-impedance bias line. Non-metallic clearance rings are also symmetrically provided on the two rectangular metal patches. The second metal pattern layer is a full-coverage metal pattern layer. A short-circuit loading probe is perpendicularly connected between the second and first metal pattern layers. One end of the short-circuit loading probe is electrically connected to the second metal pattern layer, and the other end is disposed within the non-metallic clearance ring of the first metal pattern layer to achieve an insulated connection with the first metal pattern layer, preventing a short circuit between the two rectangular metal patches of the first metal pattern layer. In this embodiment, the metamaterial unit structure is a planar structure with a unit arrangement period of T, and satisfies the formula:
[0033]
[0034] In the formula, c is the speed of light in vacuum, f0 is the center frequency, Er1 is the dielectric constant of the first dielectric substrate layer, h is the thickness of the second dielectric substrate layer, and θ is a correction factor that is adjusted according to the actual situation such as the thickness of the first dielectric substrate layer. All parameters are in mm.
[0035] The third metal pattern layer includes two symmetrically arranged fan-shaped filters and a bias line connected to the center of the fan-shaped filters. A metal pin is provided perpendicularly between the metal circular patch of the first metal pattern layer and the center of the fan-shaped filter as a feed line. The second metal pattern layer is provided with a non-metallic clearance ring to insulate the metal pin from passing through the second metal pattern layer.
[0036] In the application scenario of this embodiment...
[0037] In this embodiment, the first metal pattern layer is as follows: Figure 2 As shown, the metal pattern consists of two rectangular metal patches symmetrically positioned around the cell center. A gap separates the long sides of the patches. The diode is located at the cell center and directly connected to the two metal patches. A narrow, high-impedance bias line extends from the center of the short sides of each rectangular metal patch. The first metal pattern layer features non-metallic clearance at the short-circuit loading probe projection location to prevent short circuits between the two rectangular metal patches in the first metal pattern layer.
[0038] In this embodiment, the second metal pattern layer is as follows: Figure 3 As shown, the entire surface is covered with a metal pattern. Non-metallic avoidance positions are made at the metal pin positions of the bias circuit to prevent short circuits between the metal pins and the second metal pattern layer.
[0039] As a preferred option, the third metal pattern layer, such as Figure 4As shown, a bias circuit layer consists of two fan-shaped filters and a bias line. The fan-shaped filters have a fan radius of [missing information]. The center of the sector coincides with the endpoint of the high-impedance bias line extending from the first metal pattern layer. The high-impedance bias line of the first metal pattern layer and the bias circuit of the third metal pattern layer are connected by metal pins that connect the first dielectric substrate layer and the bias circuit of the third metal pattern layer, forming a complete diode control loop.
[0040] In this embodiment, the first and third dielectric substrate layers use Rogers 4350B board with a thickness of 0.254 mm, and the metal pattern layer is processed using the etching process of a PCB printed circuit board. The second dielectric substrate layer uses PMI foam, and the foam thickness is... This embodiment applies to a planar structure. The center frequency in this embodiment is 2.595 GHz, and the design frequency band is 2.515 GHz to 2.675 GHz. The electromagnetic wave incident angle is 0° to 60°.
[0041] It should be noted that the first metal pattern layer can be etched on either side of the first dielectric substrate layer. In this embodiment, the first metal pattern layer is etched between the first and second dielectric substrate layers, with the corresponding position of the second dielectric substrate layer being avoided. Embedding the diode in the second dielectric substrate layer can protect the diode and extend the lifespan of the structure. In this embodiment, the diode's on / off state is controlled by two bias circuits in the third metal pattern layer. The diode includes the following two states:
[0042] The diode is forward biased and is in the conducting state;
[0043] The diode is negatively biased and is in the cutoff state.
[0044] In this embodiment, by adjusting the parameters of the rectangular metal patch of the first metal pattern layer, the amplitude and phase of the unit structure under different sizes and different incident angles are observed in the diode off-state and on-state, and the amplitude and phase dimensions of the unit structure are continuously adjusted to meet the design requirements.
[0045] To intuitively demonstrate the phase control of the tunable metamaterial unit, the phase is defined as: unit phase difference (deg) = unit phase in diode off state (deg) - unit phase in diode on state (deg);
[0046] like Figure 5 The figure shows the amplitude and phase results of the unit structure under the condition of normal electromagnetic wave incidence. The amplitude results are as follows: Figure 5(a) Under the condition of normal electromagnetic wave incidence, the amplitude of the unit in both the off and on states within the frequency band is greater than -1dB, indicating that the unit has very low loss under the condition of normal electromagnetic wave incidence, meeting the design requirements; the phase result is... Figure 5 (b) Under the condition of normal electromagnetic wave incidence, the phase difference between the unit in the off state and the on state within the frequency band is 180°±7°, which meets the design requirements.
[0047] like Figure 6 As shown, this represents the amplitude and phase results of the unit structure under the condition that the electromagnetic wave is obliquely incident at different theta angles when the electromagnetic wave is in the direction of phi = 0°. Figure 6 (b) and Figure 6 (c) indicates the unit amplitude result of the unit structure under oblique incidence. Under the condition that the electromagnetic wave is obliquely incident in the direction of phi = 0°, the amplitude of the unit structure in both the off state and the on state is greater than -1.5dB, indicating that the unit amplitude performance is very stable under the condition that the electromagnetic wave is obliquely incident in the direction of phi = 0°, which meets the design requirements. Figure 6 (d) indicates the phase difference of the unit structure under the condition of oblique incidence of electromagnetic waves in the direction of phi = 0°. Under the condition of large-angle oblique incidence of electromagnetic waves in the frequency band, the phase difference of the unit in the off state and the on state is basically maintained at 150° to 186°, which meets the design requirements.
[0048] like Figure 7 As shown, this represents the amplitude and phase results of the unit structure under the condition that the electromagnetic wave is obliquely incident at different theta angles when the electromagnetic wave is in the direction of phi = 90°. Figure 7 -(b) and Figure 7 -(c) indicates the unit amplitude result of the unit structure under oblique incidence. Under the condition that the electromagnetic wave is obliquely incident in the direction of phi = 0°, the amplitude of the unit structure in both the off state and the on state is greater than -1.5dB, indicating that the unit amplitude performance is very stable under the condition that the electromagnetic wave is obliquely incident in the direction of phi = 90°, which meets the design requirements. Figure 7 -(d) indicates the phase difference of the unit structure under oblique incidence of electromagnetic waves at a direction of phi = 90°. Within the frequency range, the phase difference between the unit's off and on states remains approximately 167°–186° under large-angle oblique incidence of electromagnetic waves, meeting the design requirements. This embodiment describes a lightweight, small-size, large-angle phase-stable metamaterial structure. By loading short-circuit probes into the unit and using a foam substrate, the equivalent dielectric constant and equivalent permeability of the unit can be controlled, producing a specific response to incident electromagnetic waves. This effectively increases the electromagnetic wave transmission performance in a specific frequency band and direction of arrival, while also effectively reducing the unit period. The use of a foam substrate in this embodiment effectively reduces the structural weight.
[0049] It should be noted that the structure described in this invention can be implemented in many different forms and is not limited to the embodiments described. Any equivalent transformations made by those skilled in the art based on the description and drawings of this invention, or direct or indirect applications in other related technical fields, such as the loading and unloading of other items, are included within the protection scope of this invention.
Claims
1. A small-sized, lightweight, large-angle phase-stable metamaterial, comprising a unit structure arranged in a periodic array, characterized in that, The unit structure includes a first dielectric substrate layer, a second dielectric substrate layer, a third dielectric substrate layer, and a diode stacked sequentially. The inner layer of the first dielectric substrate layer has a first metal pattern layer, and the inner and outer layers of the third dielectric substrate layer have second and third metal pattern layers, respectively. The second dielectric substrate layer is a foam layer. The first metal pattern layer includes two rectangular metal patches symmetrically distributed with their long sides facing each other, with the center line of the unit structure as the axis of symmetry. A gap is provided between the two rectangular metal patches, and the diode is disposed between the gap. A high-impedance bias line extends from the center of the short side of each rectangular metal patch, and a metal circular patch is provided at the end of each high-impedance bias line. Non-metallic clearance rings are also symmetrically provided on the two rectangular metal patches. The second metal pattern layer is a metal pattern layer that covers the entire surface. A short-circuit loading probe is vertically connected between the second metal pattern layer and the first metal pattern layer. One end of the short-circuit loading probe is electrically connected to the second metal pattern layer, and the other end is located in the non-metallic clearance ring of the first metal pattern layer to achieve an insulated connection with the first metal pattern layer. The third metal pattern layer includes two symmetrically arranged fan-shaped filters and a bias line connected to the center of the fan-shaped filters. A metal pin is provided perpendicularly between the metal circular patch of the first metal pattern layer and the center of the fan-shaped filter as a feed line. The second metal pattern layer is provided with a non-metallic clearance ring to insulate the metal pin from passing through the second metal pattern layer.
2. The small-size, lightweight, large-angle phase-stable metamaterial according to claim 1, characterized in that, The unit structure is either planar or curved.
3. The small-size, lightweight, large-angle phase-stable metamaterial according to claim 2, characterized in that, The unit structure is a square structure, and the arrangement period of the structural unit array is... T It is obtained through the following formula, ， In the formula, c The speed of light in a vacuum f 0 is the center frequency. Er 1 is the dielectric constant of the first dielectric substrate layer. h The thickness of the second dielectric substrate layer. q It is a correction factor.
4. The small-size, lightweight, large-angle phase-stable metamaterial according to claim 2, characterized in that, The arrangement period of the structural unit array is 0.2-0.3 times the center frequency wavelength.
5. The small-size, lightweight, large-angle phase-stable metamaterial according to claim 2, characterized in that, The dielectric substrate layer of the unit structure adopts PCB substrate, ITO conductive glass, and PET with CuMesh printing process.
6. The small-size, lightweight, large-angle phase-stable metamaterial according to claim 2, characterized in that, The radius of the fan-shaped filter is 0.2-0.3 times the center frequency wavelength.
7. The small-size, lightweight, large-angle phase-stable metamaterial according to claim 2, characterized in that, The second dielectric substrate layer is made of PMI foam with a thickness of 0.08-0.12 times the center frequency wavelength.