Chip thermal management apparatus, method, and electronic device

Abstract

The application discloses a kind of chip thermal management device, method and electronic equipment, it is related to chip technical field.Therein, device includes first, second heating equipment, heat conducting component, phase change material pedestal, controller, first heating equipment and phase change material pedestal thermal coupling, second heating equipment, phase change material pedestal, chip are all thermal coupling with heat conducting component;Controller is used for: when the temperature of phase change material pedestal does not reach first preset temperature, control first heating equipment heats phase change material pedestal, otherwise then control first heating equipment does not heat, and first preset temperature is obtained according to target solid phase rate greater than 0% and less than 100%;When the temperature of chip does not reach second preset temperature, control second heating equipment heats heat conducting component, to heat chip, otherwise then control second heating equipment does not heat.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chips, and in particular to a chip thermal management device, a chip thermal management method and an electronic device. BACKGROUND

[0002] In the related art, the heat dissipation substrate of a methane detection laser chip usually uses TEC refrigeration to control the temperature of the chip, and uses a thermal resistance plus an AIN heat sink substrate, or uses a single heating and natural heat dissipation method to control the temperature. However, when an external environmental temperature shock occurs, the above temperature control methods cannot quickly respond and adjust, resulting in a large temperature fluctuation of the chip temperature. SUMMARY

[0003] The present application aims to at least partially solve one of the technical problems in the related art. To this end, a first object of the present application is to provide a chip thermal management device to reduce the impact of environmental temperature changes on chip thermal management.

[0004] A second object of the present application is to provide a chip thermal management method.

[0005] A third object of the present application is to provide an electronic device.

[0006] To achieve the above objects, a first aspect of the present application provides a chip thermal management device, which comprises a first heating device, a second heating device, a heat conducting member, a phase change material base, and a controller, the controller being connected to the first heating device and the second heating device, the first heating device being thermally coupled to the phase change material base, the second heating device, the phase change material base, and a chip being thermally coupled to the heat conducting member; wherein the controller is configured to control the first heating device to heat the phase change material base when the temperature of the phase change material base does not reach a first preset temperature, and to control the first heating device not to heat the phase change material base when the temperature of the phase change material base reaches the first preset temperature, wherein the first preset temperature is a temperature obtained according to a target solid phase rate of the phase change material base, and the target solid phase rate is greater than 0% and less than 100%; the controller is further configured to control the second heating device to heat the heat conducting member to heat the chip when the temperature of the chip does not reach a second preset temperature, and to control the second heating device not to heat the heat conducting member when the temperature of the chip reaches the second preset temperature.

[0007] In addition, the chip thermal management device according to the embodiments of the present application can also have the following additional technical features:

[0008] According to one embodiment of the present invention, the apparatus further includes: a first temperature acquisition device, the first temperature acquisition device being thermally coupled to the heat-conducting component and connected to the controller, the first temperature acquisition device being used to acquire the temperature of the heat-conducting component and send the temperature of the heat-conducting component to the controller; the controller is further used to: obtain the temperature of the chip based on the temperature of the heat-conducting component.

[0009] According to one embodiment of the present invention, the device further includes a heat dissipation platform disposed between the heat-conducting member and the phase change material base, the heat dissipation platform being thermally coupled to the heat-conducting member and the phase change material base.

[0010] According to one embodiment of the present invention, the device further includes: a second temperature acquisition device, the second temperature acquisition device being thermally coupled to the heat sink and connected to the controller, the second temperature acquisition device being used to acquire the temperature of the heat sink and send the temperature of the heat sink to the controller; the controller is further used to: obtain the temperature of the phase change material base based on the temperature of the heat sink.

[0011] According to one embodiment of the present invention, the controller is further configured to: obtain the phase transition temperature of the phase change material substrate based on the target solid fraction, and use the phase transition temperature as the first preset temperature.

[0012] According to one embodiment of the present invention, the heat-conducting component is a heat sink or a thermal resistance pad.

[0013] According to one embodiment of the present invention, the device further includes a thermal resistance layer disposed between the heat-conducting member and the heat sink, the thermal resistance layer being thermally coupled to the heat-conducting member and the heat sink.

[0014] To achieve the above objectives, a second aspect of the present invention provides a chip thermal management method. The method is used in a chip thermal management device, which includes a first heating device, a second heating device, a thermally conductive component, and a phase change material (PCM) substrate. The first heating device is thermally coupled to the PCM substrate, and the second heating device, the PCM substrate, and the chip are all thermally coupled to the thermally conductive component. The method includes: acquiring the temperature of the PCM substrate and the temperature of the chip; when the temperature of the PCM substrate does not reach a first preset temperature, controlling the first heating device to heat the PCM substrate, wherein the first preset temperature is a temperature obtained based on the target solid fraction of the PCM substrate, and the target solid fraction is greater than 0% and less than 100%; when the temperature of the PCM substrate reaches the first preset temperature, controlling the first heating device not to heat the PCM substrate; when the temperature of the chip does not reach a second preset temperature, controlling the second heating device to heat the thermally conductive component to heat the chip; and when the temperature of the chip reaches the second preset temperature, controlling the second heating device not to heat the thermally conductive component.

[0015] In addition, the chip thermal management method according to embodiments of the present invention may also have the following additional technical features:

[0016] According to one embodiment of the present invention, the chip thermal management device further includes a first temperature acquisition device, a second temperature acquisition device, and a heat dissipation platform disposed between the thermally conductive member and the phase change material substrate. The heat dissipation platform is thermally coupled to the thermally conductive member and the phase change material substrate. The first temperature acquisition device is thermally coupled to the thermally conductive member, and the second temperature acquisition device is thermally coupled to the heat dissipation platform. Acquiring the temperature of the phase change material substrate and the temperature of the chip includes: acquiring the temperature of the thermally conductive member through the first temperature acquisition device and acquiring the temperature of the heat dissipation platform through the second temperature acquisition device; obtaining the temperature of the chip based on the temperature of the thermally conductive member, and obtaining the temperature of the phase change material substrate based on the temperature of the heat dissipation platform.

[0017] To achieve the above objectives, a third aspect of the present invention provides an electronic device including a memory, a processor, and a computer program stored in the memory and running on the processor, wherein when the computer program is executed by the processor, it implements the above-described chip thermal management method.

[0018] According to embodiments of the present invention, a chip thermal management device, method, and electronic device include a first heating device, a second heating device, a thermally conductive component, a phase change material (PCM) substrate, and a controller. The controller is connected to the first and second heating devices. The first heating device is thermally coupled to the PCM substrate, and the second heating device, the PCM substrate, and the chip are all thermally coupled to the thermally conductive component. The controller is configured to control the first heating device to heat the PCM substrate when the temperature of the PCM substrate has not reached a first preset temperature, and to control the first heating device to stop heating the PCM substrate when the temperature of the PCM substrate reaches the first preset temperature. The first preset temperature is a temperature obtained based on the target solid fraction of the PCM substrate, where the target solid fraction is greater than 0% and less than 100%. The controller is also configured to control the second heating device to heat the thermally conductive component to heat the chip when the temperature of the chip has not reached a second preset temperature, and to control the second heating device to stop heating the thermally conductive component when the temperature of the chip reaches the second preset temperature. This enables thermal management of the chip and reduces the impact of ambient temperature changes on chip thermal management.

[0019] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a chip thermal management device according to an embodiment of the present invention;

[0021] Figure 2 This is a cross-sectional view of a chip thermal management device according to an embodiment of the present invention;

[0022] Figure 3 This is a flowchart illustrating the operation of a chip thermal management device according to an embodiment of the present invention;

[0023] Figure 4 This is a schematic diagram of the solid fraction of an embodiment of the present invention;

[0024] Figure 5 This is a flowchart of a chip thermal management method according to an embodiment of the present invention;

[0025] Figure 6 This is a structural block diagram of an electronic device according to an embodiment of the present invention. Detailed Implementation

[0026] The following description of chip thermal management devices, methods, and electronic devices according to embodiments of the present invention is based on the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described with reference to the accompanying drawings are exemplary and should not be construed as limiting the present invention.

[0027] Figure 1This is a schematic diagram of the structure of a chip thermal management device according to a specific embodiment of the present invention.

[0028] like Figure 1 As shown, the chip thermal management device 100 includes a first heating device, a second heating device, a heat-conducting component 109, a phase change material (PCM) substrate 108, and a controller. The controller is connected to the first and second heating devices. The first heating device is thermally coupled to the PCM substrate 108, and the second heating device, the PCM substrate 108, and the chip 102 are all thermally coupled to the heat-conducting component 109. The controller is used to control the first heating device to heat the PCM substrate 108 when the temperature of the PCM substrate 108 has not reached a first preset temperature. When the temperature of the material base 108 reaches the first preset temperature, the controller controls the first heating device to stop heating the phase change material base 108. The first preset temperature is the temperature obtained based on the target solid fraction of the phase change material base 108, where the target solid fraction is greater than 0% and less than 100%. The controller is also used to control the second heating device to heat the heat-conducting component 109 to heat the chip 102 when the temperature of the chip 102 has not reached the second preset temperature, and to control the second heating device to stop heating the heat-conducting component 109 when the temperature of the chip 102 reaches the second preset temperature.

[0029] Specifically, the aforementioned chip thermal management device 100 includes a phase change material base 108 and a first heating device. The first heating device is thermally coupled to the phase change material base 108. Since thermal coupling means that the two parts are in a state where heat exchange can occur, the first heating device can exchange heat with the phase change material base 108.

[0030] A controller is also provided to control the first heating device.

[0031] The controller determines the first preset temperature based on the target solid fraction. After obtaining the temperature of the phase change material base 108, it compares the temperature of the phase change material base 108 with the first preset temperature. When the temperature of the phase change material is lower than the first preset temperature, the controller controls the first heating device to generate heat to heat the phase change material base 108. When the temperature of the phase change material base 108 exceeds the first preset temperature, the controller controls the first heating device to stop heating so that the phase change material base 108 can dissipate heat naturally.

[0032] The controller can obtain the phase change temperature of the phase change material base 108 based on the target solid fraction and use the phase change temperature as the first preset temperature.

[0033] This setting allows the temperature of the phase change material base 108 to be fixed at a first preset temperature, ensuring a constant solid fraction of the phase change material in the base 108. Since the first preset temperature is obtained based on the target solid fraction, which is greater than 0% and less than 100%, the phase change material in the base 108 is always in a phase equilibrium state, i.e., always in a state where there is both solid and liquid. This ensures that the phase change material base can cope with both increases and decreases in ambient temperature.

[0034] In the event of an ambient temperature shock, i.e., a significant change in ambient temperature, the phase change material substrate 108 will adjust its temperature by changing its solid fraction, thus minimizing the temperature change. Since the aforementioned chip thermal management device 100 also includes a heat-conducting component 109, and both the chip 102 and the phase change material substrate 108 are thermally coupled to the heat-conducting component 109 (i.e., the chip 102 exchanges heat with the heat-conducting component 109, and the heat-conducting component 109 exchanges heat with the phase change material substrate 108), the temperature of the phase change material substrate 108 will not change significantly due to ambient temperature shocks. This reduces the impact of ambient temperature shocks, specifically slowing down the rate of temperature change in the chip 102 during ambient temperature shocks, thereby reducing the impact of ambient temperature on the controller.

[0035] The aforementioned chip thermal management device 100 further includes a second heating device, which is thermally coupled to the heat-conducting component 109. Therefore, the second heating device can exchange heat with the heat-conducting component 109, and subsequently exchange heat with the chip 102 through the heat-conducting component 109. A controller is also provided to acquire the temperature of the chip 102. When the temperature of the chip 102 has not reached a second preset temperature, the controller controls the second heating device to heat the heat-conducting component 109 to heat the chip 102. When the temperature of the chip 102 reaches the second preset temperature, the controller controls the second heating device not to heat the heat-conducting component 109.

[0036] When the controller performs thermal management on the chip 102 through the second heating device, if an ambient temperature shock occurs, the chip 102's temperature changes slowly when faced with an ambient temperature shock because of the presence of a phase change material base 108 whose temperature does not change significantly due to the ambient temperature shock. This allows the controller to easily control the second heating device to perform thermal management on the chip 102.

[0037] This allows for thermal management of chip 102 and reduces the impact of ambient temperature changes on the thermal management of chip 102.

[0038] See Figure 1 and Figure 2The chip thermal management device 100 includes a first temperature acquisition device, a second temperature acquisition device, a first heating device, a second heating device, a thermally conductive component 109, a phase change material base 108, a heat sink 106, and a thermal resistance layer 104.

[0039] The first temperature acquisition device is thermally coupled to the heat-conducting component 109 and connected to the controller. The first temperature acquisition device is used to acquire the temperature of the heat-conducting component 109 and send the temperature of the heat-conducting component 109 to the controller.

[0040] The controller is also used to: obtain the temperature of the chip 102 based on the temperature of the heat-conducting component 109. For example, the controller may have a built-in correspondence between the temperature of the heat-conducting component 109 and the temperature of the chip 102, so as to obtain the temperature of the chip 102 based on the temperature of the heat-conducting component 109.

[0041] The heat dissipation platform 106 is disposed between the heat-conducting component 109 and the phase change material base 108, and the heat dissipation platform 106 is thermally coupled to the heat-conducting component 109 and the phase change material base 108.

[0042] The second temperature acquisition device is thermally coupled to the heat sink 106 and connected to the controller. The second temperature acquisition device is used to acquire the temperature of the heat sink 106 and send the temperature of the heat sink 106 to the controller.

[0043] The controller is also used to: obtain the temperature of the phase change material base 108 based on the temperature of the heat sink 106. For example, the controller may have a built-in correspondence between the temperature of the heat sink 106 and the temperature of the phase change material base 108, so as to obtain the temperature of the phase change material base 108 based on the temperature of the heat sink 106.

[0044] A thermal resistance layer 104 is disposed between the thermally conductive component 109 and the heat sink 106, and the thermal resistance layer 104 is thermally coupled to the thermally conductive component 109 and the heat sink 106.

[0045] The aforementioned first heating device includes a PCM (Phase Change Material) heating resistor. The thermal coupling between the first heating device and the phase change material base 108 refers to the thermal coupling between the PCM heating resistor 107 in the first heating device and the phase change material base 108. The connection of the controller to the first heating device means that the output terminal of the controller is connected to the control terminal of the first heating device. For example, the controller can control the on / off state of the path containing the PCM heating resistor 107 in the first heating device, thereby controlling whether the PCM heating resistor 107 generates heat.

[0046] The aforementioned second heating device includes a chip heating resistor 103. The thermal coupling between the second heating device and the heat-conducting component 109 refers to the thermal coupling between the chip heating resistor 103 and the heat-conducting component 109. The connection of the controller to the second heating device means that the output of the controller is connected to the control terminal of the second heating device. For example, the controller can control the on / off state of the path containing the chip heating resistor 103 in the second heating device, thereby controlling whether the chip heating resistor 103 generates heat.

[0047] The aforementioned first temperature acquisition device includes a chip thermistor 101. The thermal coupling between the first temperature acquisition device and the heat-conducting component 109 refers to the thermal coupling between the chip thermistor 101 and the heat-conducting component 109. The connection of the first temperature acquisition device to the controller means that the output terminal of the first temperature acquisition device is connected to the input terminal of the controller. For example, the chip in the first temperature acquisition device can obtain the resistance value of the chip thermistor 101, determine the temperature of the heat-conducting component 109 based on the resistance value, and send the temperature of the heat-conducting component 109 to the controller.

[0048] The aforementioned second temperature acquisition device includes a PCM thermistor 105. The aforementioned second temperature acquisition device is thermally coupled to the heat sink 106, meaning that the PCM thermistor 105 in the second temperature acquisition device is thermally coupled to the heat sink 106. The aforementioned second temperature acquisition device is connected to the controller, meaning that the output terminal of the second temperature acquisition device is connected to the input terminal of the controller. For example, the chip in the second temperature acquisition device can obtain the resistance value of the PCM thermistor 105, obtain the temperature of the heat sink 106 based on the resistance value, and send the temperature of the heat sink 106 to the controller.

[0049] It should be noted that, Figure 1 and Figure 2 The example shown is merely a specific embodiment, and practical applications may not be limited to this.

[0050] In some embodiments of the present invention, the heat-conducting component 109 is a heat sink or a thermal resistance pad.

[0051] See Figure 3 The specific embodiment shown is a PID controller, the heat sink 106 is a copper platform, and the chip 102 is a laser chip.

[0052] As can be seen, the PCM module (i.e., the phase change material base 108) exchanges heat with the copper platform, the copper platform exchanges heat with the heat sink / thermal resistance pad, and the heat sink / thermal resistance pad exchanges heat with the laser chip. The PID controller provides feedback control for the chip heating resistor 103 and the PCM heating resistor 107.

[0053] The aforementioned chip thermal management device 100 includes two independent control systems. The chip 102 temperature control employs a non-cooling unidirectional heating control. When the chip 102 temperature has not reached the second preset temperature, the chip heating resistor 103 is activated to raise the chip 102 temperature. When the chip 102 temperature exceeds the second preset temperature, natural heat dissipation from the heat sink is used to cool the chip 102. The above control uses a positional or incremental PID control method.

[0054] The solid fraction of the phase change material (PCM) in the PCM base 108 is controlled using a non-cooling unidirectional heating control method. The target solid fraction of the PCM base 108 is set at 70%, meaning the solid fraction of the PCM needs to be controlled at 70%. To achieve this, the phase change temperature Tpc corresponding to a 70% solid fraction needs to be obtained. This phase change temperature Tpc is used as the first preset temperature. When the temperature does not reach the first preset temperature, the PCM heating resistor 107 is activated to raise the temperature of the PCM (reducing the solid fraction). When the temperature exceeds the first preset temperature, natural heat dissipation is used to cool the PCM (increasing the solid fraction). The above control uses a positional or incremental PID control method.

[0055] In some embodiments of the present invention, the phase change material base 108 includes a phase change material and a PCM encapsulation module. The PCM encapsulation module encapsulates the phase change material, which is a paraffin / expanded graphite composite material with a ratio ranging from 2.5:1 to 15.5:1 (paraffin-graphite mass ratio). Different ratios result in different phase change temperature ranges, thereby adjusting the phase change temperature range of the phase change material base 108 to ultimately achieve high latent heat of phase change and high composite thermal conductivity. The PCM encapsulation module encapsulates a heat dissipation copper platform and uses a 0.4mm thick aluminum box. Four heating resistors are evenly arranged around the perimeter of the aluminum box wall, each with a heating power range of 0-500mW. These heating resistors are the aforementioned PCM heating resistors 107. A PCM thermistor 105 is located on the heat dissipation copper platform and is used for feedback control of the PCM heating resistors 107 to control the PCM temperature and solidity.

[0056] In some embodiments of the present invention, the specific material type and proportion range of the phase change material in the phase change material base 108 can be obtained according to the following method.

[0057] The relationship between the total heat storage of the phase change material and the power of the chip heating resistor 103 is expressed as follows:

[0058] Qpcm≥200000*Pch*dt,

[0059] Where Qpcm is the total heat storage, Pch is the maximum power of the chip heating resistor 103, and dt is the thermal control feedback time interval of the chip 102. The thermal conductivity of the phase change material should be greater than 4.5 W / mK, and the solid-liquid conversion volume change rate should not exceed 6%. The phase change temperature range is 50~65℃ (for uncooled lasers); the phase change temperature range is 20~25℃ (for TEC lasers). Once the phase change material ratio is determined, the phase change temperature range should be no less than 5℃, and the solid fraction change range within this phase change temperature range should be 15%~85%. For details, please refer to [reference needed]. Figure 4 The specific embodiments shown are as follows.

[0060] In other words, in order to better ensure the ability of the phase change material base 108 to resist the impact of ambient temperature, in this specific embodiment, the target solid fraction ranges from 15% to 85%.

[0061] In summary, the chip thermal management device of this invention includes a first heating device, a second heating device, a thermally conductive component, a phase change material (PCM) substrate, and a controller. The controller connects the first and second heating devices. The first heating device is thermally coupled to the PCM substrate, and the second heating device, the PCM substrate, and the chip are all thermally coupled to the thermally conductive component. The controller is used to control the first heating device to heat the PCM substrate when the temperature of the PCM substrate has not reached a first preset temperature, and to control the first heating device to stop heating the PCM substrate when the temperature of the PCM substrate reaches the first preset temperature. The first preset temperature is a temperature obtained based on the target solid fraction of the PCM substrate, where the target solid fraction is greater than 0% and less than 100%. The controller is also used to control the second heating device to heat the thermally conductive component to heat the chip when the chip temperature has not reached a second preset temperature, and to control the second heating device to stop heating the thermally conductive component when the chip temperature reaches the second preset temperature. Therefore, thermal management of the chip can be achieved, and the impact of ambient temperature changes on chip thermal management can be reduced.

[0062] Furthermore, this invention proposes a chip thermal management method.

[0063] Figure 5 This is a flowchart of a chip thermal management method according to an embodiment of the present invention.

[0064] In this embodiment of the invention, the chip thermal management method is used in a chip thermal management device, which includes a first heating device, a second heating device, a heat-conducting component, and a phase change material base. The first heating device is thermally coupled to the phase change material base, and the second heating device, the phase change material base, and the chip are all thermally coupled to the heat-conducting component.

[0065] like Figure 5 As shown, the chip thermal management method includes:

[0066] S11, obtain the temperature of the phase change material substrate and the temperature of the chip.

[0067] S12, when the temperature of the phase change material base does not reach the first preset temperature, control the first heating device to heat the phase change material base.

[0068] The first preset temperature is the temperature obtained based on the target solid fraction of the phase change material substrate, where the target solid fraction is greater than 0% and less than 100%.

[0069] S13, when the temperature of the phase change material base reaches the first preset temperature, control the first heating device not to heat the phase change material base.

[0070] S14: When the chip temperature does not reach the second preset temperature, control the second heating device to heat the heat-conducting component to heat the chip.

[0071] S15, when the chip temperature reaches the second preset temperature, control the second heating device not to heat the heat-conducting component.

[0072] In some embodiments of the present invention, the above-mentioned chip thermal management device further includes a first temperature acquisition device, a second temperature acquisition device, and a heat sink disposed between the thermally conductive component and the phase change material substrate. The heat sink is thermally coupled to the thermally conductive component and the phase change material substrate. The first temperature acquisition device is thermally coupled to the thermally conductive component, and the second temperature acquisition device is thermally coupled to the heat sink. The above-mentioned acquisition of the temperature of the phase change material substrate and the temperature of the chip includes: acquiring the temperature of the thermally conductive component through the first temperature acquisition device and acquiring the temperature of the heat sink through the second temperature acquisition device; obtaining the temperature of the chip based on the temperature of the thermally conductive component and obtaining the temperature of the phase change material substrate based on the temperature of the heat sink.

[0073] It should be noted that other specific embodiments of the chip thermal management method of the present invention can be found in the chip thermal management device of the above embodiments.

[0074] The chip thermal management method of this invention can achieve thermal management of the chip and reduce the impact of ambient temperature changes on chip thermal management.

[0075] Furthermore, the present invention proposes an electronic device.

[0076] Figure 6 This is a structural block diagram of an electronic device according to an embodiment of the present invention.

[0077] like Figure 6As shown, the electronic device 500 includes a processor 501 and a memory 503. The processor 501 and the memory 503 are connected, for example, via a bus 502. Optionally, the electronic device 500 may also include a transceiver 504. It should be noted that in practical applications, the transceiver 504 is not limited to one type, and the structure of this electronic device 500 does not constitute a limitation on the embodiments of the present invention.

[0078] Processor 501 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this invention. Processor 501 may also be a combination that implements computational functions, such as including one or more microprocessor combinations, a combination of a DSP and a microprocessor, etc.

[0079] Bus 502 may include a pathway for transmitting information between the aforementioned components. Bus 502 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. Bus 502 can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 6 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0080] The memory 503 stores a computer program corresponding to the chip thermal management method of the above embodiments of the present invention. This computer program is controlled and executed by the processor 501. The processor 501 executes the computer program stored in the memory 503 to implement the content shown in the foregoing method embodiments.

[0081] in, Figure 6 The electronic device 500 shown is merely an example and should not be construed as limiting the functionality and scope of use of the embodiments of the present invention.

[0082] The electronic device of this invention, by implementing the chip thermal management method of the above embodiments, can achieve thermal management of the chip and reduce the impact of ambient temperature changes on chip thermal management.

[0083] It should be noted that the logic and / or steps represented in the flowchart or otherwise described herein can be considered as a ordered list of executable instructions for implementing logical functions, which can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include: an electrical connection having one or more wires (electronic device), a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Alternatively, the computer-readable medium may be paper or other suitable media on which the program can be printed, since the program can be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in a computer memory.

[0084] It should be understood that various parts of the present invention can be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. If implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0085] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0086] In the description of this specification, the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and should not be construed as limiting the present invention.

[0087] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0088] In this specification, unless otherwise stated, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly defined. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0089] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0090] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A chip thermal management device, characterized in that, The device includes a first heating device, a second heating device, a heat-conducting component, a phase change material base, and a controller. The controller is connected to the first heating device and the second heating device. The first heating device is thermally coupled to the phase change material base. The second heating device, the phase change material base, and the chip are all thermally coupled to the heat-conducting component. The controller is configured to control the first heating device to heat the phase change material substrate when the temperature of the phase change material substrate has not reached the first preset temperature, and to control the first heating device to stop heating the phase change material substrate when the temperature of the phase change material substrate reaches the first preset temperature, wherein the first preset temperature is a temperature obtained based on the target solid fraction of the phase change material substrate, and the target solid fraction is greater than 0% and less than 100%; The controller is further configured to control the second heating device to heat the heat-conducting component to heat the chip when the chip temperature has not reached the second preset temperature, and to control the second heating device not to heat the heat-conducting component when the chip temperature reaches the second preset temperature.

2. The chip thermal management device according to claim 1, characterized in that, The device further includes: A first temperature acquisition device is thermally coupled to the heat-conducting component and connected to the controller. The first temperature acquisition device is used to acquire the temperature of the heat-conducting component and send the temperature of the heat-conducting component to the controller. The controller is also used for: The temperature of the chip is obtained based on the temperature of the heat-conducting component.

3. The chip thermal management device according to claim 1, characterized in that, The device further includes a heat dissipation platform disposed between the heat-conducting component and the phase change material base, the heat dissipation platform being thermally coupled to the heat-conducting component and the phase change material base.

4. The chip thermal management device according to claim 3, characterized in that, The device further includes: A second temperature acquisition device is thermally coupled to the heat sink and connected to the controller. The second temperature acquisition device is used to acquire the temperature of the heat sink and send the temperature of the heat sink to the controller. The controller is also used for: The temperature of the phase change material base is obtained from the temperature of the heat sink.

5. The chip thermal management device according to claim 1, characterized in that, The controller is also used for: The phase transition temperature of the phase change material substrate is obtained based on the target solid fraction, and the phase transition temperature is used as the first preset temperature.

6. The chip thermal management device according to claim 1, characterized in that, The heat-conducting component is a heat sink or a thermal resistance pad.

7. The chip thermal management device according to claim 3, characterized in that, The device further includes a thermal resistance layer disposed between the heat-conducting component and the heat dissipation platform, the thermal resistance layer being thermally coupled to the heat-conducting component and the heat dissipation platform.

8. A chip thermal management method, characterized in that, The method is used in a chip thermal management device, the chip thermal management device including a first heating device, a second heating device, a thermally conductive component, and a phase change material substrate. The first heating device is thermally coupled to the phase change material substrate, and the second heating device, the phase change material substrate, and the chip are all thermally coupled to the thermally conductive component. The method includes: The temperature of the phase change material substrate and the temperature of the chip are obtained; When the temperature of the phase change material substrate does not reach the first preset temperature, the first heating device is controlled to heat the phase change material substrate, wherein the first preset temperature is a temperature obtained based on the target solid fraction of the phase change material substrate, and the target solid fraction is greater than 0% and less than 100%; When the temperature of the phase change material base reaches the first preset temperature, the first heating device is controlled to stop heating the phase change material base; When the temperature of the chip does not reach the second preset temperature, the second heating device is controlled to heat the heat-conducting component in order to heat the chip; When the temperature of the chip reaches the second preset temperature, the second heating device is controlled not to heat the heat-conducting component.

9. The chip thermal management method according to claim 8, characterized in that, The chip thermal management device further includes a first temperature acquisition device, a second temperature acquisition device, and a heat dissipation platform disposed between the thermally conductive component and the phase change material substrate. The heat dissipation platform is thermally coupled to the thermally conductive component and the phase change material substrate. The first temperature acquisition device is thermally coupled to the thermally conductive component, and the second temperature acquisition device is thermally coupled to the heat dissipation platform. Acquiring the temperature of the phase change material substrate and the temperature of the chip includes: The temperature of the heat-conducting component is collected by the first temperature acquisition device, and the temperature of the heat sink is collected by the second temperature acquisition device. The temperature of the chip is obtained based on the temperature of the heat-conducting component, and the temperature of the phase change material base is obtained based on the temperature of the heat sink.

10. An electronic device, characterized in that, It includes a memory, a processor, and a computer program stored in the memory and running on the processor, wherein when the computer program is executed by the processor, it implements the chip thermal management method according to any one of claims 8-9.

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