Doped nickel oxide-based target material as well as preparation method and application thereof

Abstract

The invention belongs to the technical field of target materials, and discloses a doped nickel oxide-based target material as well as a preparation method and application thereof. The doped nickel oxide-based target material comprises the following raw material components: nickel oxide, lithium oxide and other metal oxides, wherein the other metal oxides are selected from at least one of copper oxide, cobalt oxide and silver oxide. The doped nickel oxide-based target material prepared by the invention can be used for RPD coating and evaporation coating, and the grain structure of the nickel oxide-based evaporation target material is improved and the carrier concentration and mobility of the thin film are improved in a lithium oxide doping manner and other specific trace metal oxides, so that the hole conductivity of the nickel oxide-based thin film is improved.

Description

Technical Field

[0001] This invention belongs to the field of target technology, specifically relating to a doped nickel oxide-based target, its preparation method, and its application. Background Technology

[0002] Nickel oxide (NiOx) is a typical p-type direct bandgap semiconductor material with a bandgap width of 3.15-4.0 eV. It is an inorganic compound, and thin films made from its targets exhibit excellent light transmittance and conductivity, making them suitable for hole transport layers in perovskite thin-film solar cells. Compared to organic hole transport layer materials, its superior electrical properties and chemical stability make it more suitable for widespread industrial applications. Inorganic oxide NiO x Hole transport layers are widely used due to their superior properties, such as NiO. x The intrinsic p-type conductivity of the hole transport layer is due to the presence of intrinsic nickel vacancies; its high optical transmittance is due to its band gap of approximately 3.7 eV; its good energy level matching is due to its valence band level being very close to that of the perovskite layer (-5.4 eV); and it possesses excellent chemical stability as an inorganic metal oxide layer with low raw material costs. Currently, NiO-based... x The photoelectric conversion efficiency of inverted perovskite solar cells with hole transport layers can reach over 25.2%.

[0003] Due to the presence of nickel vacancies in NiOx films, holes will concentrate in the nickel vacancies, thus exhibiting a p-type semiconductor state. However, in the actual preparation of NiOx, Ni vacancies with high ionization energy are easily generated, resulting in a low hole density in undoped NiOx, which in turn leads to a decrease in the concentration of charge carriers. This is crucial for improving the conductivity of nickel oxide.

[0004] Currently, the main approach is to prepare doped nickel oxide-based targets by incorporating elements such as Cu, Mg, Zn, Sn, and Sr into NiO to improve its conductivity and the crystallinity of its thin films. For example, this is similar to intrinsic NiO. x In comparison, Cu:NiO x The hole transport layer exhibits higher conductivity and stronger hole extraction capability, and Cu:NiO xThe high conductivity of the hole transport layer promotes efficient and stable perovskite solar cells. For example, invention patent CN118206360A discloses a nickel oxide target with high conductivity and high target density by doping NiO with 0.1-1.0 wt% zinc oxide, 0.1-1.5 wt% strontium oxide, and 0.1-5.0 wt% tin oxide. Invention patent CN116768606A discloses a composite nickel-magnesium oxide target and its preparation method, prepared by mixing NiO powder and MgO powder in a mass ratio of (0.1-1.0):(9.0-9.9), which can produce a nickel-magnesium oxide target with a relative density exceeding 98% and a resistivity less than 200 KΩ·cm.

[0005] However, the above-mentioned methods for preparing doped nickel oxide films are only applicable to magnetron sputtering deposition and pulsed laser deposition. In terms of industrialization, due to the higher manufacturing cost of pulsed laser deposition, magnetron sputtering is more suitable for mass production. However, NiO prepared using magnetron sputtering... x Numerous defects remain in the film layer, such as uneven thickness, and the quality needs improvement, thus hindering its mass production and mature application. Relevant literature reports that Ulrich W. Paetzold et al. prepared NiO using electron beam evaporation. x The hole transport layer has an average absorption rate of only 1%, high light transmittance, and high-quality NiO. x The hole transport layer improves the efficiency of perovskite solar cells to 18.5%. The film prepared using reactive plasma deposition (RPD) technology significantly enhances the efficiency of perovskite photovoltaic cells. Its low-temperature deposition process does not damage other layers, produces uniform film quality, and the target material does not require high density or low bulk resistivity. Therefore, in the preparation of NiO... x In the film layer scheme, the RPD preparation process is an effective way to improve the efficiency of photovoltaic cells.

[0006] Therefore, there is an urgent need to develop NiO suitable for RPD. x Evaporation of target materials enables mass production and has been successfully applied to perovskite solar cells, helping to improve cell efficiency. Summary of the Invention

[0007] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention proposes a doped nickel oxide-based target, its preparation method and application. The nickel oxide-based target can be used for RPD coating and evaporation coating. By doping with lithium oxide and using specific trace metal oxides, the grain structure of the nickel oxide-based target is improved, thereby increasing the carrier concentration and mobility of the thin film and thus improving the hole conductivity of the nickel oxide-based thin film.

[0008] To solve the above-mentioned technical problems, the first aspect of the present invention provides a doped nickel oxide-based target material, the raw material components of which include nickel oxide, lithium oxide and other metal oxides, wherein the other metal oxides are selected from at least one of copper oxide, cobalt oxide and silver oxide.

[0009] Specifically, this invention involves doping a certain amount of lithium oxide and at least one other metal oxide selected from copper oxide, cobalt oxide, and silver oxide into a nickel oxide matrix. The interaction of these doping elements effectively improves the conductivity and density of the nickel oxide target material, and also improves the grain structure of the nickel oxide-based vapor deposition target material, thereby increasing the carrier concentration and mobility of the nickel oxide thin film, and ultimately improving the hole conductivity of the nickel oxide thin film. Specifically, the incorporation of lithium oxide into the nickel oxide matrix effectively improves the nickel vacancy concentration and reduces lattice defects in the nickel oxide. This target material, through deposition, produces Li:NiO... x Hole transport layer thin film structure, compared with Cu:NiO in existing technology x Compared to the structure, Li:NiO x In the hole transport layer (HTL) lacking a charge transport barrier, the structure achieves a higher work function match with nickel oxide, enabling the simultaneous generation of a positive built-in electric field and an effective electric field, thereby accelerating hole transport. This field-effect modulation strategy effectively improves carrier transport efficiency and suppresses carrier recombination at the HTL / perovskite interface.

[0010] Copper oxide, as an oxide, CuO x Nickel oxide (NiO) is a common p-type semiconductor material. Its conductivity mechanism mainly stems from the presence of Cu ion vacancies in the crystal, resulting in hole transport properties. The carrier concentration and mobility of nickel oxide films can be controlled by manipulating the Cu ion vacancies. Furthermore, Cu-doped NiO... x The crystal lattice helps improve the crystallinity of the target material. Cobalt oxide and silver oxide have similar effects to copper oxide, effectively improving the nickel vacancy concentration and compensating for the defects of nickel vacancies in the nickel oxide lattice.

[0011] In some embodiments of the present invention, the mass ratio of nickel oxide to lithium oxide is (97-99):(1-3). For example, the mass ratio of nickel oxide to lithium oxide is 97:3, 97.5:2.5, 98:2, 98.5:1.5, 99:1, etc., including but not limited to the listed values; at the same time, other unlisted values ​​within the range are also applicable.

[0012] In some embodiments of the present invention, the doping amount of the other metal oxides accounts for 0.01-0.05% of the total mass of the nickel oxide and lithium oxide. For example, the doping amount of the other metal oxides is 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, etc., and other unlisted values ​​within the same range are also applicable.

[0013] In some embodiments of the present invention, the purity of the lithium oxide and other metal oxides is not less than 99.99%.

[0014] In some embodiments of the present invention, the specific surface area (BET) of the other metal oxides is in the range of 10-25 m². 2 / g Between; particle size distribution: D 50 ≤2μm, D max ≤10μm.

[0015] A second aspect of the present invention provides a method for preparing the above-mentioned doped nickel oxide-based target, comprising the following steps: (1) After mixing nickel oxide and lithium oxide, they are ground, granulated and calcined to obtain lithium-doped nickel oxide powder; (2) The lithium-doped nickel oxide powder is mixed with other metal oxide powders, then ground and granulated to obtain a mixed powder; (3) The mixed powder is pressed into shape to obtain a blank; (4) The green blank is dehydrated and sintered to obtain the doped nickel oxide target.

[0016] In some embodiments of the present invention, in step (1), the preparation process of nickel oxide is as follows: nickel powder is dissolved in nitric acid solution, diluted with water after dissolution, and then transferred to alcohol solution for hydrolysis. After calcination, nickel oxide powder is obtained.

[0017] In some embodiments of the present invention, in step (1), the grinding process is as follows: lithium oxide and nickel oxide are added to pure water, a dispersant is added, and the mixture is stirred to obtain a slurry; then the slurry is ground for 2-5 hours at a speed of 1400-2000 rpm using Φ0.50mm zirconium beads as abrasive.

[0018] In some embodiments of the present invention, in step (1), the granulation process is as follows: the ground slurry is dried and crushed, then added to pure water, stirred evenly, and left to stand for 24 hours; then the oil pressure is repeated to form, crush, grind and granulate to obtain powder.

[0019] In some embodiments of the present invention, in step (1), the calcination temperature is 1300-1400℃.

[0020] In some embodiments of the present invention, in step (1), the calcination temperature regime is as follows: first, the temperature is raised to 250-350°C at a rate of 0.3-0.8°C / min and held for 1-2 hours; then, the temperature is raised to 450-550°C at a rate of 1-3°C / min and held for 1-2 hours; then, the temperature is raised to 850-950°C at a rate of 1-3°C / min, an oxygen atmosphere is turned on at a flow rate of 20-40 L / min, and the temperature is raised to 1300°C-1400°C at a rate of 1-2°C / min and held for 5 hours; finally, the temperature is naturally cooled to room temperature.

[0021] In some embodiments of the present invention, in step (1), the purity of the lithium-doped nickel oxide powder is ≥99.99%, and the BET of the powder is 7-15m. 2 The particle size distribution is between / g and ; D50≤2μm, Dmax≤30μm.

[0022] In some embodiments of the present invention, in step (2), the grinding process is as follows: after mixing lithium-doped nickel oxide powder with other metal oxide powders, using mixed zirconium beads of Φ6mm and Φ3mm as abrasive, grinding at a speed of 500-700rpm for 20-28 hours.

[0023] In some embodiments of the present invention, in step (2), the granulation process is as follows: the ground mixed powder is sieved, then added to pure water, stirred evenly, left to stand for 20-28 hours, and then repeatedly pressed, crushed, ground and granulated to obtain mixed powder.

[0024] In some embodiments of the present invention, in step (2), the specific surface area of ​​the mixed powder is 5-15 m². 2 Between / g; Particle size distribution: D 50 ≤100μm, D max ≤4μm.

[0025] In some embodiments of the present invention, in step (3), the pressure of the pressing is 10-15 MPa.

[0026] In some embodiments of the present invention, in step (4), the temperature of dehydration is 300-650°C.

[0027] In some embodiments of the present invention, in step (4), the heat preservation time for dehydration is 2-4 hours.

[0028] In some embodiments of the present invention, in step (4), the sintering temperature is 1400-1500°C.

[0029] In some embodiments of the present invention, in step (4), the sintering temperature regime is as follows: first, the temperature is raised to 900-950°C at a rate of 1-3°C / min, oxygen is introduced at a flow rate of 30-50L / min, and the temperature is held for 2-20 hours; then, the temperature is raised to 1300-1350°C at a rate of 0.3-0.8°C / min, nitrogen or oxygen atmosphere is introduced at the same time, and the temperature is held for 2-6 hours; then, the temperature is raised to 1400-1500°C at a rate of 0.1-0.5°C / min, and the temperature is held for 10-12 hours; then, the temperature is lowered to 900-950°C at a rate of 0.5-1.5°C / min, and the gas supply is stopped; finally, the temperature is lowered to room temperature at a rate of 0.5-1.5°C / min.

[0030] A third aspect of the present invention provides a doped nickel oxide-based thin film, characterized in that it is deposited from the above-mentioned doped nickel oxide-based target material by reactive plasma deposition technology.

[0031] In some embodiments of the present invention, the coating process is as follows: the doped nickel oxide-based target is placed in a magnetically focused water-cooled crucible of an RPD device, a transparent glass substrate is used as the coating substrate, and the vacuum chamber is evacuated to 5.0 x 10⁻⁶ mm. -4 Below Pa, a mixture of argon and oxygen is introduced at an oxygen flow rate of 800-1200 L / min. The pressure in the equipment chamber after gas introduction is 4-6 Pa. The power supply current of the hollow cathode electron gun is 160-170 A. Ar is ionized by the high-voltage power supply, forming Ar⁺ ions and high-energy electrons, generating a stable plasma (Ar⁺ ions and high-energy electrons). + (Ions and high-energy electrons). The plasma is precisely focused and guided to the target surface under the magnetic field confinement of the electromagnetic coil and permanent magnet. The target is vaporized through a combination of thermal evaporation and ion sputtering. The vaporized nickel ions and the ionized active oxygen of the reaction gas undergo a chemical reaction on the substrate surface to generate a nickel oxide-based thin film. The film thickness is controlled within the range of 20±10 nm. After annealing at 180-220℃ for 5-15 min, the doped nickel oxide thin film is obtained.

[0032] Specifically, the doped nickel oxide-based target of the present invention can be used in electron beam thermal evaporation and RPD coating processes, compared with traditional magnetron sputtering and solution coating methods for preparing NiO. x Hole transport layer method, NiO deposited using RPD method x Better crystal quality and fewer defects in the hole transport layer help improve the carrier transport performance of perovskite solar cells, thereby improving the power generation efficiency of the cells.

[0033] A fourth aspect of the present invention provides a perovskite solar cell, including a hole transport layer, wherein the raw materials for preparing the hole transport layer include the above-mentioned doped nickel oxide-based thin film.

[0034] Compared with the prior art, the above-described technical solution of the present invention has at least the following technical effects or advantages: (1) The doped nickel oxide-based target of the present invention contains a certain amount of lithium oxide and other metal oxides (such as copper oxide, cobalt oxide, and silver oxide). The interaction of these elements effectively improves the conductivity and density of the nickel oxide-based target and improves the grain structure of the nickel oxide-based vapor deposition target, thereby increasing the hole conductivity of the nickel oxide-based thin film. Specifically, the incorporation of lithium oxide into the nickel oxide matrix effectively improves the nickel vacancy concentration, reduces lattice defects in nickel oxide, and thus accelerates hole transport. At the same time, the carrier concentration and mobility of the nickel oxide thin film can be controlled by regulating Cu ion vacancies, Co ions, or Ag ions, and the crystallinity of the target can be improved, thereby improving the nickel vacancy concentration and compensating for the defects of nickel vacancies in the nickel oxide lattice.

[0035] (2) The doped nickel oxide-based target prepared by the present invention can be used for RPD coating and evaporation coating. By doping with lithium oxide and other specific trace metal oxides, the grain structure of the nickel oxide-based evaporation target is improved, thereby increasing the carrier concentration and mobility of the thin film and thus improving the hole conductivity of the nickel oxide-based thin film. Detailed Implementation

[0036] The present invention will now be described in detail with reference to embodiments to facilitate understanding of the invention by those skilled in the art. It is particularly important to note that the embodiments are merely illustrative of the invention and should not be construed as limiting the scope of protection of the invention. Non-essential improvements and adjustments made to the invention by those skilled in the art based on the above description should still fall within the scope of protection of the invention. Furthermore, all raw materials mentioned below, unless otherwise specified, are commercially available products; all process steps or preparation methods not mentioned in detail are process steps or preparation methods known to those skilled in the art.

[0037] Example 1 A nickel oxide-based target material, the raw material components of which include nickel oxide, lithium oxide and other metal oxides (copper oxide).

[0038] The mass ratio of nickel oxide to lithium oxide is 99:1, and the doping amount of copper oxide accounts for 0.01% of the total mass of nickel oxide and lithium oxide. The purity of both lithium oxide and copper oxide is ≥99.99%. The specific surface area of ​​copper oxide is 10-25 m² / g. 2 Between / g; Particle size distribution: D 50 ≤2μm, D max ≤10μm.

[0039] The preparation method of the above-mentioned doped nickel oxide-based target includes the following steps: (1) Preparation of lithium-doped nickel oxide powder Nickel powder was dissolved in nitric acid solution, diluted with water, and then transferred to an alcohol solution for hydrolysis, followed by calcination at 700°C. Nickel oxide powder was obtained after 6 hours.

[0040] Weigh lithium oxide powder and nickel oxide powder according to the mass ratio, add polyacrylamide dispersant in pure water (the amount added is 0.3% of the total mass of lithium oxide powder and nickel oxide powder), stir, and prepare a mixed slurry.

[0041] Sand milling: The mixed slurry is transferred into a sand mill containing Φ0.50mm zirconium beads and sand milled at 1600rpm for 4 hours; then the sand-milled slurry is heated and baked while being subjected to ultrasonic vibration until it is dried; then it is pulverized to obtain mixed powder.

[0042] Grinding and granulation: Add 10% pure water by weight to the mixed powder, stir evenly, let stand for 24 hours, then repeat the oil pressure pressing to form, crush, grind and granulate to obtain the mixed powder.

[0043] High-temperature calcination: The mixed powder was subjected to high-temperature calcination. The calcination temperature regime was as follows: first, the temperature was increased to 300℃ at a rate of 0.5℃ / min and held for 1.5 hours; then, the temperature was increased to 500℃ at a rate of 1℃ / min and held for 1.5 hours; then, the temperature was increased to 900℃ at a rate of 1℃ / min, with an oxygen atmosphere at a flow rate of 30L / min; then, the temperature was increased to 1350℃ at a rate of 1.5℃ / min and held for 5 hours, and then slowly cooled to room temperature to obtain lithium-doped nickel oxide powder with a purity ≥99.99% and a BET value of 7-15m. 2 The particle size distribution is between / g and ; D50≤2μm, Dmax≤30μm.

[0044] (2) Preparation of doped mixed powders The prepared lithium-doped nickel oxide powder was mixed with copper oxide powder and ball-milled using Φ6mm and Φ3mm mixed zirconium beads at 600 rpm for 24 hours. The mixture was then sieved to obtain a doped mixed powder with a specific surface area of ​​5-15 m². 2 The particle size distribution is between 1.40 g / cm³ and 1.40 g / cm³. The particle size distribution is: D50≤100nm, Dmax≤4μm. 3 Between these values, the moisture content is ≤0.5%.

[0045] Grinding and granulation: Add 5% of the mass of pure water to the mixed powder, stir evenly, let stand for 24 hours, then repeat the oil pressure pressing to form, crush and grind with an agate mortar to obtain the mixed powder.

[0046] (3) Forming of the unfinished blank: Using a tableting mold, the doped and mixed powder is injected into the mold and pressed into shape using a hydraulic press at a forming pressure of 12 MPa. After quantitative powder filling and mold cavity dimensional determination, and pressure holding and strengthening, a target blank with specific dimensions is obtained.

[0047] (4) Dehydration and sintering: The target blank was dehydrated at 500℃ for 3 hours. Then, sintering was performed using the following temperature regime: first, the temperature was increased to 920℃ at a rate of 1℃ / min, oxygen was introduced at a flow rate of 40L / min, and the temperature was held for 10 hours; then, the temperature was increased to 1320℃ at a rate of 0.5℃ / min, nitrogen or oxygen atmosphere was introduced, and the temperature was held for 4 hours; then, the temperature was increased to 1450℃ at a rate of 0.3℃ / min, and the temperature was held for 10 hours; then, the temperature was decreased to 950℃ at a rate of 1℃ / min, and the gas supply was stopped; finally, the temperature was decreased to room temperature at a rate of 1℃ / min to obtain the doped nickel oxide-based target material of this embodiment, with a density of 4.1 g / cm³. 3 .

[0048] Examples 2-7 Referring to the composition of the nickel oxide-based target material in Example 1, the only difference between Examples 2-7 and Example 1 is that the types and amounts of other metal oxides in the nickel oxide-based target material are changed, as shown in Table 1.

[0049] Table 1:

[0050] Comparative Examples 1-7 Referring to the composition of the nickel oxide-based target material in Example 1, the only difference between Comparative Examples 1-7 and Example 1 is that the types and amounts of other metal oxides in the nickel oxide-based target material are changed, as shown in Table 2.

[0051] Table 2:

[0052] Performance testing The processed lithium-doped nickel oxide target was measured. The target density was tested using shape, size and weight, the target resistivity was tested using a resistivity meter, the target bulk resistance was tested using a multimeter, the grain size was observed using a metallographic microscope or scanning electron microscope, and the uniformity of dopant element distribution in the target was detected using EDS. The results are shown in Table 3. Table 3:

[0053] As shown in Table 3, Examples 1-7, through the preparation of mixed powders of nickel oxide and lithium oxide raw materials and the doping of trace metal oxides (one or two of copper oxide, cobalt oxide, and silver oxide), and the precise control of the doping amount of trace metal oxides, resulted in sintered targets with excellent properties of high density and low bulk resistivity. Metallographic microscopy revealed uniform grain size and pore distribution. EDS analysis showed that the uniformity of Li element distribution in the targets reached approximately 1% deviation. The processed targets were stable for RPD coating, and the film thicknesses obtained after coating were all within the range of 20±5 nm, with low sheet resistance.

[0054] Comparative Examples 1-3 were prepared by providing 1-3% by mass of pure nickel oxide powder doped with Li2O, and simultaneously doping with 0.1% of Co2O3 and / or Ag2O trace metal oxides, which improved the sintering density. However, the target resistivity was high, the grain size was large, and the sheet resistance of the film obtained after the target was coated was large.

[0055] Comparative Example 4 only added 1% by mass of lithium oxide (Li2O) doping. Under this sintering process, the prepared target material had a low density, large grain size, increased porosity between grains, and high resistivity. The sheet resistance of the thin film obtained after target material coating was still relatively large.

[0056] Compared to Example 1, Comparative Examples 5-7, due to the absence of Li2O or the use of magnesium oxide / zinc oxide as trace metal oxides, resulted in high resistivity of the prepared target materials and relatively large sheet resistance of the thin film after target coating. This may be because the incorporation of magnesium oxide or zinc oxide altered the crystallinity or crystal orientation of the LiNiO phase, leading to an increase in grain boundaries and pores in the target material. Compared to the target material without Li2O but doped with 1% copper oxide, the resistivity and sheet resistance of the coated thin film were higher.

[0057] For those skilled in the art, several simple deductions or substitutions can be made without departing from the inventive concept, without requiring creative effort. Therefore, any simple improvements made to this invention by those skilled in the art based on the disclosure of this invention should be within the scope of protection of this invention. The above embodiments are preferred embodiments of this invention, and all processes similar to this invention and equivalent changes should fall within the scope of protection of this invention.

Claims

1. A doped nickel oxide-based target material, characterized in that, The raw material components include nickel oxide, lithium oxide and other metal oxides selected from at least one of copper oxide, cobalt oxide and silver oxide.

2. The doped nickel oxide-based target of claim 1, wherein, The mass ratio of the nickel oxide and the lithium oxide is (97-99):(1-3), and the doping amount of the other metal oxides accounts for 0.01-0.05% of the total mass of the nickel oxide and the lithium oxide.

3. The doped nickel oxide-based target of claim 1, wherein, The purity of the lithium oxide and the other metal oxides is not less than 99.99%. and / or the other metal oxide has a specific surface area of between 10 and 25 m 2 / g; a particle size distribution of: D 50 ≤ 2 μm, D max ≤ 10 μm.

4. A method of producing a doped nickel oxide-based target according to any one of claims 1 to 3, characterized by, The method comprises the following steps: (1) mixing nickel oxide and lithium oxide, and then performing grinding, granulation and calcination to obtain lithium-doped nickel oxide powder; (2) mixing the lithium-doped nickel oxide powder with other metal oxide powder, and then performing grinding and granulation to obtain mixed powder; (3) performing compression molding on the mixed powder to obtain a green body; (4) performing dehydration and sintering on the green body to obtain the doped nickel oxide target.

5. The method of claim 4, wherein the target is a doped nickel oxide target. In step (1), the temperature of the calcination is 1300-1400℃.

6. The method of claim 4, wherein the target is a doped nickel oxide-based target. In step (2), the specific surface area of the mixed powder is between 5 and 15 m 2 / g; the particle size distribution is: D 50 ≤ 100 μm, D max ≤ 4 μm.

7. The method of claim 4, wherein the target is a doped nickel oxide target. In step (3), the pressure of the compression molding is 10-15MPa.

8. The method of claim 4, wherein the target is a doped nickel oxide target. In step (4), the temperature of the dehydration is 300-650℃, and the temperature of the sintering is 1400-1500℃.

9. A doped nickel oxide-based thin film, characterized in that, The doped nickel oxide-based target according to any one of claims 1-3 is formed by a reactive plasma deposition technology.

10. A perovskite solar cell, characterized by, A hole transport layer is included, and the raw material for preparing the hole transport layer includes the doped nickel oxide-based thin film according to claim 9.

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