Crucible device and control method thereof, ion source equipment and ion implanter

Abstract

The invention relates to a crucible device and a control method thereof, ion source equipment and an ion implanter. The crucible device comprises a crucible, the crucible comprises a sublimation cavity and a steady flow cavity communicated with the sublimation cavity, the sublimation cavity is used for bearing solid raw materials, and the cross section area of the steady flow cavity is larger than that of the sublimation cavity; the heat preservation heater is used for heating the flow stabilizing cavity. The crucible device can realize steady flow.

Description

Technical Field

[0001] This application relates to the field of ion implantation technology, and in particular to crucible apparatus and its control method, ion source equipment and ion implanter. Background Technology

[0002] The ion source materials used in ion implantation equipment can include two types of materials, which are gaseous and solid at room temperature. Gaseous materials include boron trifluoride, arsine, and phosphine. Solid materials include indium trichloride and antimony trioxide.

[0003] When supplying a gaseous source, the gas flow rate can be controlled by a mass flow controller (MFC) to ensure a stable and steady flow of gas into the reaction chamber. When supplying a solid source, the solid needs to be heated and sublimated into a gas. Since the solid source gas will condense and clog the MFC, the flow rate of the solid source gas cannot be controlled by the MFC.

[0004] It is difficult to maintain a stable gas flow after the solid source gas is supplied to the reaction chamber, which leads to an unstable ion beam generated in the reaction chamber. Poor beam uniformity results in poor product yield in the ion implantation process. Summary of the Invention

[0005] Therefore, it is necessary to provide crucible apparatus and its control method, ion source equipment and ion implanter to address at least one of the above problems.

[0006] In a first aspect, this application provides a crucible apparatus comprising: a crucible including a sublimation chamber and a flow stabilizing chamber connected to the sublimation chamber, the sublimation chamber being used to hold solid raw materials, the cross-sectional area of ​​the flow stabilizing chamber being larger than the cross-sectional area of ​​the sublimation chamber; and a heat-insulating heater for heating the flow stabilizing chamber.

[0007] By setting up a flow stabilizing chamber, the gas discharged from the sublimation chamber can be received. The flow stabilizing chamber acts as a buffer, and the gas discharged from the flow stabilizing chamber can be stabilized. The heat preservation heater can heat the flow stabilizing chamber, which helps to prevent the gaseous raw materials from condensing in the flow stabilizing chamber and also helps to maintain a stable gas flow rate, ensuring that the raw materials are discharged from the flow stabilizing chamber.

[0008] In some embodiments, the first section of the flow stabilizing cavity connected to the sublimation cavity has a flared shape with a gradually increasing cross-sectional area. Exemplarily, the ratio of the cross-sectional area of ​​the second section of the flow stabilizing cavity to the cross-sectional area of ​​the sublimation cavity is between 1 and 50.

[0009] This configuration allows the sublimated raw material gas to diffuse smoothly as it exits the sublimation chamber; it also buffers the airflow while preventing excessively long gas supply delays.

[0010] In some embodiments, the sublimation chamber and the flow stabilizing chamber are arranged laterally, and the crucible further includes a partition disposed between the sublimation chamber and the flow stabilizing chamber and at least separating the lower part of the sublimation chamber; the outlet of the flow stabilizing chamber faces laterally towards the position of the sublimation chamber that is not separated by the partition.

[0011] With this configuration, the sublimation chamber and the flow stabilization chamber can be stably connected, and the two chambers can be easily heated separately; the outlet of the flow stabilization chamber can gather the gas and stably output the airflow.

[0012] In some embodiments, the crucible apparatus further includes a sublimation heater for heating the lower part of the sublimation chamber and a heat-preserving heater for heating the lower part of the flow-stabilizing chamber.

[0013] This setup ensures effective heating from the bottom and allows for separate temperature control of the two chambers.

[0014] In some embodiments, the crucible apparatus further includes a temperature sensor disposed in the flow stabilizing chamber, with the temperature sensor positioned opposite the heat preservation heater; the material of the flow stabilizing chamber includes metal.

[0015] With this configuration, the flow stabilizing cavity has good thermal conductivity and rapid heat dissipation; the temperature sensor can reflect the temperature of the entire flow stabilizing cavity wall, reducing the direct impact of the heat preservation heater.

[0016] In some embodiments, the crucible apparatus further includes a regulating valve disposed at the outlet of the flow stabilizing chamber. Exemplarily, the regulating valve is made of the same material as the flow stabilizing chamber; the sublimation chamber is made of quartz.

[0017] This configuration allows for control of the exhaust state of the crucible device; it ensures that the temperature of the regulating valve is basically consistent with the temperature of the flow stabilizing chamber, preventing gas condensation; and it ensures that the sublimation chamber is resistant to high temperatures.

[0018] Secondly, this application provides a method for controlling a crucible apparatus, the crucible apparatus being the aforementioned crucible apparatus. The method includes: maintaining a flow stabilizing chamber at least at the sublimation temperature of the solid raw material, and heating the sublimation chamber to sublimate the solid raw material; cooling the sublimation chamber; and cooling the flow stabilizing chamber in response to no gas flow out of the flow stabilizing chamber.

[0019] The method for controlling the crucible device according to the embodiments of this application can prevent gas from condensing in the flow stabilizing chamber and can effectively and stably discharge the gas from the sublimation of solid raw materials.

[0020] In some embodiments, the heating method of the sublimation chamber is controlled by adjusting the opening of the regulating valve provided at the outlet of the flow stabilizing chamber according to the pressure of the gas discharged from the crucible device. This includes: adjusting the opening of the regulating valve within a preset opening range; heating the sublimation chamber in response to the opening of the regulating valve reaching the upper limit of the preset opening range; and cooling the sublimation chamber in response to the opening of the regulating valve reaching the lower limit of the preset opening range.

[0021] This setup allows for control of gas flow rate to match the sublimation rate of solid raw materials, easily achieving steady flow control.

[0022] Thirdly, this application provides an ion source device, which includes: the aforementioned crucible device; a reaction chamber device, including an arc-starting chamber and a vacuum pressure sensor, the arc-starting chamber being connected to the flow stabilizing chamber of the crucible device, the vacuum pressure sensor being used to measure the pressure of the gas discharged from the crucible device; and a control system for controlling the crucible device to perform the steps of the aforementioned method for controlling the crucible device.

[0023] The ion source device of this application embodiment is based on a stable solid-state source and is capable of generating a stable and uniform ion beam.

[0024] Fourthly, this application provides an ion implanter, which includes: an implantation chamber; and the aforementioned ion source equipment.

[0025] The ion implanter described in this application operates stably and produces high product yield. Attached Figure Description

[0026] Figure 1 This is a schematic structural block diagram of an ion source device according to one or more embodiments;

[0027] Figure 2 A schematic structural block diagram of an ion implanter according to one or more embodiments;

[0028] Figure 3 This is a schematic diagram of the crucible apparatus according to one or more embodiments;

[0029] Figure 4 This is a schematic flowchart of a method for controlling a crucible apparatus according to one or more embodiments;

[0030] Figure 5 This is a control flowchart of an ion source device according to one or more embodiments;

[0031] Figure 6 Pressure curves for an ion source device according to one or more embodiments.

[0032] Explanation of reference numerals in the attached diagram: 1. Sublimation chamber; 2. Flow stabilization chamber; 21. First section; 22. Second section; 23. End; 231. Outlet; 3. Baffle; 100. Crucible device; 110. Crucible; 120. Sublimation heater; 130. Heat preservation heater; 140. Temperature sensor; 150. Regulating valve; 200. Reaction chamber device; 210. Arc initiation chamber; 220. Vacuum pressure sensor; 1000. Ion source device; 1100. Processor; 1200. Measurement controller; 1300. PID controller; 1400. Valve controller; 1500. Heat preservation heating controller; 1600. Sublimation heating controller; 2000. Ion implanter; 2100. Implantation chamber. Detailed Implementation

[0033] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0034] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0035] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0036] Furthermore, the terms "first," "second," and "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. For example, a first direction may also be referred to as a second direction, and a second direction may also be referred to as a first direction. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0037] In this application, unless otherwise expressly specified and limited, the terms "connected," "linked," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; a flexible connection or a rigid connection along at least one direction; a mechanical connection or an electrical connection; a direct connection or an indirect connection through an intermediate medium, or a direct connection with an intermediate medium present; and they can also refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. The terms "installed," "set," "fixed," etc., can be broadly understood as connection. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0038] refer to Figure 1 , Figure 1 An ion source device according to an embodiment of this application is illustrated. In an exemplary embodiment, the ion source device 1000 includes a crucible device 100 and a reaction chamber device 200. The ion source device 1000 may also include a control device, or the crucible device 100 and the reaction chamber device 200 may each include a controller.

[0039] The crucible apparatus 100 can sublimate solid raw materials (reagents) into gas, and can also be called a solid source. The crucible apparatus 100 supplies the solid source to the reaction chamber apparatus 200, which is able to generate ions based on the solid source.

[0040] refer to Figure 2 This application provides an ion implanter 2000. The ion implanter 2000 may include an implantation chamber 2100 and an ion source device 1000. The ion implanter 2000 can be used for ion implantation processes, such as doping a wafer in the implantation chamber 2100. Exemplarily, the ion implanter 2000 may also include an ion extractor and quality analyzer, an accelerating tube, and a scanning device to obtain an ion beam using the ion source device 1000 and to perform ion beam scanning.

[0041] The ion source device 1000 of this application embodiment can also be used in other systems.

[0042] refer to Figure 3In an exemplary embodiment, this application provides a crucible apparatus 100. The crucible apparatus 100 may include a crucible 110 (VAP for short) and a heat preservation heater 130. Exemplarily, the sublimation heater 120 may be part of the crucible apparatus 100, or it may be considered as an external device that can be assembled and mated.

[0043] The crucible 110 includes a sublimation chamber 1 and a flow stabilizing chamber 2. The flow stabilizing chamber 2 is connected to the sublimation chamber 1 in a sealed manner, and the connection may be detachable. Exemplarily, the flow stabilizing chamber 2 is fixed to the sublimation chamber 1, and the sublimation chamber 1 may include a feeding gate.

[0044] Sublimation chamber 1 is used to hold solid raw materials, which can also be referred to as reagents. The material of sublimation chamber 1 can be quartz, which is stable and resistant to high temperatures. The shape of sublimation chamber 1 can be a cylindrical tube.

[0045] refer to Figure 3 For ease of description, a spatial rectangular coordinate system XYZ is established. The sublimation cavity 1 and the flow stabilizing cavity 2 are arranged along a first direction. This first direction can be approximately parallel to the X-axis and is transverse. In other embodiments, the sublimation cavity 1 and the flow stabilizing cavity 2 can be arranged obliquely or along the Z-axis. The flow stabilizing cavity 2 can be located above the sublimation cavity 1.

[0046] Using the vertical plane along the first direction as the cross-section, the cross-sectional area of ​​the flow stabilizing cavity 2 is larger than that of the sublimation cavity 1. When the multiple segments of the flow stabilizing cavity 2 have different shapes, the area of ​​the cross-section at any position can be larger than the cross-sectional area of ​​the sublimation cavity 1. Along the first direction, the projection of the flow stabilizing cavity 2 covers the projection of the sublimation cavity 1. The inlet end of the flow stabilizing cavity 2 can be gradually increased based on the sublimation cavity 1 to ensure that the gas discharged from the sublimation cavity 1 has a diffusion tendency, thereby achieving buffered and stable flow.

[0047] The sublimation heater 120 is used to heat the sublimation chamber 1, causing the solid raw material contained in the sublimation chamber 1 to sublimate. The gas formed by sublimation will be discharged from the sublimation chamber 1 into the flow stabilizing chamber 2. The flow stabilizing chamber 2 acts as a buffer.

[0048] The heat-insulating heater 130 is used to heat the flow stabilizing chamber 2, and can heat it to at least the sublimation temperature of the solid raw material. When the gas flows to the peripheral wall of the flow stabilizing chamber 2, it does not condense, but continues to flow. The amount of gas does not decrease due to condensation, therefore the flow stabilizing chamber 2 helps to maintain a stable gas flow rate, ensuring that the gas is discharged from the flow stabilizing chamber 2. The crucible device 100 provided in this embodiment of the application can stably discharge the solid source.

[0049] The flow stabilizing cavity 2 may include a first segment 21, a second segment 22, and an end segment 23 arranged sequentially along a first direction. The first segment 21 connects to the sublimation cavity 1 and has a flared shape with a gradually increasing cross-sectional area, which can be approximately frustum-shaped to seal the connection with the sublimation cavity 1. The connection between the flow stabilizing cavity 2 and the sublimation cavity 1, as well as the inner wall shape of the flow stabilizing cavity 2, remain basically smooth with few corners, and the corners can also be smoothly transitioned. The inclination angle of the inner wall of the first segment 21 is, for example, about 45°.

[0050] The ratio of the cross-sectional area of ​​the second segment 22 to the cross-sectional area of ​​the sublimation chamber 1 is between 1 and 50. The raw material gas obtained from sublimation diffuses smoothly when discharged from the sublimation chamber 1, and the flow stabilizing chamber 2 can buffer the airflow while avoiding excessive gas supply delay. For example, this ratio is between 2 and 5. The dimension of the second segment 22 along the first direction may be less than, equal to, or greater than the diameter.

[0051] The end segment 23 can block the second segment 22, and the connection between the two is rounded. The end segment 23 can have an outlet 231. The gas in the second segment 22 will be collected and discharged at the outlet 231, which can stably output airflow. The cross-sectional area of ​​the outlet 231 can be smaller than the cross-sectional area of ​​the sublimation chamber 1.

[0052] The crucible 110 also includes a partition 3, which is disposed between the sublimation chamber 1 and the flow stabilizing chamber 2. (Reference) Figure 3 The sublimation chamber 1 and the flow stabilizing chamber 2 are arranged horizontally. A partition 3 blocks the lower part of the sublimation chamber 1, for example, about one-third of its area. Solid raw materials in the sublimation chamber 1 will not slip into the flow stabilizing chamber 2; the sublimated gas can be transported out from the opening on the partition 3.

[0053] The outlet 231 of the flow stabilizing chamber 2 can face the sublimation chamber 1 in the transverse direction at the position not blocked by the partition 3. When arranged in the transverse direction, the materials of the sublimation chamber 1 and the flow stabilizing chamber 2 can be different, but the sublimation chamber 1 and the flow stabilizing chamber 2 can be stably connected, and the two chambers can be easily heated separately.

[0054] The material of the flow stabilizing chamber 2 may include metals, such as tungsten, molybdenum, and other high-temperature resistant metals. The sublimation temperature of the solid raw material can be above 300°C, and both the sublimation chamber 1 and the flow stabilizing chamber 2 can withstand the operating temperature. The outlet 231 of the flow stabilizing chamber 2 can be connected to a pipe, and the pipe material can also be metal.

[0055] The sublimation heater 120 of the crucible apparatus 100 can be used to heat the lower part of the sublimation chamber 1. The sublimation heater 120 can be a light bulb, using light radiation to heat the sublimation chamber 1, causing the solid raw material to sublimate. The heat preservation heater 130 can also be a light bulb, used to heat the side wall of the flow stabilizing chamber 2, or it can be a resistance wire or other heating method. When placed horizontally, the heat preservation heater 130 is used to heat the lower part of the flow stabilizing chamber 2, and the heat will be transferred upwards. Heating from the bottom ensures the heating effect, and the sublimation heater 120 and the heat preservation heater 130 can control the temperature of the two chambers separately.

[0056] The crucible apparatus 100 also includes a temperature sensor 140, which is placed in the flow stabilizing cavity 2. The flow stabilizing cavity 2, made of metal, has good thermal conductivity, and the temperature sensor 140 can reflect the temperature of the entire flow stabilizing cavity wall. The temperature sensor 140 is positioned opposite the heat-insulating heater 130 to reduce the direct influence of the heat-insulating heater 130 on the temperature sensor 140. The heat-insulating heater 130 can be located in the lower part of the second section 22. The temperature sensor 140 can be located in the upper part of the second section 22.

[0057] refer to Figure 1 and Figure 3 The crucible apparatus 100 also includes a regulating valve 150. The regulating valve 150 is located at the outlet 231 of the flow stabilizing chamber 2 and can control the exhaust state of the crucible apparatus 100. The regulating valve 150 can be made of metal, specifically, it can be the same material as the flow stabilizing chamber 2, enabling the temperature of the regulating valve 150 to be substantially the same as the temperature of the flow stabilizing chamber 2, preventing gas condensation, and thus preventing solid raw materials from clogging the regulating valve 150, ensuring that gas is delivered out of the crucible apparatus 100.

[0058] refer to Figure 1 The ion source device 1000 of this application includes the aforementioned crucible device 100. The ion source device 1000, based on a stable solid-state source, is capable of generating a stable and uniform ion beam.

[0059] The reaction chamber device 200 may include an arc-starting chamber 210 and a vacuum pressure sensor 220. The arc-starting chamber 210 is connected to the flow stabilizing chamber 2 of the crucible device 100, and the vacuum pressure sensor 220 is used to measure the pressure of the gas discharged from the crucible device 100.

[0060] The ion source device 1000 may also include a control device. The control device is used to control the crucible device 100 and can also be used to control the reaction chamber device 200.

[0061] For example, the ion source device 1000 may include a processor 1100, a measurement controller 1200, a PID controller 1300, a valve controller 1400, a thermal insulation and heating controller 1500, and a sublimation heating controller 1600. The processor 1100 can be connected to the measurement controller 1200 and the PID controller 1300 via conversion interfaces, which may include analog-to-digital converters (AD) and input / output interfaces (IO). The processor 1100 can communicate with each controller via AD / IO conversion signals. The PID controller 1300 may be a proportional-integral-derivative controller, and it is connected to the valve controller 1400, the thermal insulation and heating controller 1500, and the sublimation heating controller 1600. The PID controller 1300 can be connected to the measurement controller 1200 and can be used to form a closed-loop control device.

[0062] The measuring controller 1200 can be connected to the vacuum pressure sensor 220. The vacuum pressure sensor 220 can be a high vacuum pressure sensor. The reaction chamber device 200 also includes other pipelines or valves, and may be equipped with a rough vacuum pressure sensor. The vacuum pressure sensor 220 can measure the gas pressure in the arc-starting chamber 210. The sublimation heating controller 1600 can be connected to the sublimation heater 120. The heat preservation heating controller 1500 can be connected to the heat preservation heater 130 and the temperature sensor 140. The valve controller 1400 can be connected to the regulating valve 150.

[0063] refer to Figure 4 and Figure 5 This application provides a method S100 for controlling a crucible apparatus. The method S100 for controlling a crucible apparatus may include steps S110 to S140.

[0064] Solid raw materials can be added to the sublimation chamber 1 of the aforementioned crucible apparatus 100. Then, step S110 can be: simultaneously heating the sublimation chamber 1 and the flow stabilizing chamber 2. Simultaneous heating is fast and can be adjusted according to differences in heating rate.

[0065] In step S120, the flow stabilizing chamber 2 is kept at least at the sublimation temperature of the solid raw material, and the sublimation chamber 1 is heated to sublimate the solid raw material. Continuous heating of the sublimation chamber 1 helps to ensure that the solid raw material sublimates into gas and is continuously discharged. Keeping the flow stabilizing chamber 2 at the sublimation temperature can prevent the solid source from condensing, and at the same time prevent the heat preservation heater 130 from consuming too much energy.

[0066] When the crucible device 100 is not required to supply a solid source, step S130 can be performed first to cool the sublimation chamber 1. This stops gas generation and prevents the generated gas from condensing in the flow stabilization chamber 2.

[0067] In step S140, in response to the absence of gas flow from the flow stabilizing chamber 2, the flow stabilizing chamber 2 is cooled. Specifically, the cooling of the flow stabilizing chamber 2 can be considered only after the temperature of the sublimation chamber 1 has dropped to one-third of the sublimation temperature of the solid raw material. The method S100 for controlling the crucible apparatus according to the embodiment of this application can prevent gas from condensing in the flow stabilizing chamber 2 and can effectively and stably discharge the gas from the sublimation of the solid raw material.

[0068] To further ensure stable airflow, regulating valve 150 can be controlled. Since pressure in a vacuum is the result of the thermal motion of gas molecules, according to the Clapeyron equation: PV = nRT, where P is the gas pressure, V is the relevant volume within the ion source device 1000, R is the universal gas constant, T is the gas temperature, and n is the gas flow rate. Both R and V can be constants. Let K = R / V, then P = KnT. The gas temperature T can be approximately the same as the temperature of sublimation chamber 1, and the temperature of sublimation chamber 1 can be controlled. Therefore, under constant temperature conditions, regulating valve 150 can be controlled to ensure stable flow, while simultaneously monitoring the gas pressure value P to form a closed-loop feedback control.

[0069] refer to Figure 6 When the regulating valve 150 is set, in step S110, the sublimation heating controller 1600 can control the sublimation heater 120 to heat up, and the PID controller 1300 can control the regulating valve 150 to stabilize the pressure and ensure stable flow. In the initial stage, the opening of the regulating valve 150 can be greater than 80%. For example, after time t0, the heat preservation heater 130 heats the temperature of the flow stabilizing chamber 2 to a predetermined temperature, for example, slightly higher than the sublimation temperature, and then maintains the temperature of the flow stabilizing chamber 2 at the predetermined temperature. The sublimation heater 120 can continue to heat because the sublimation of the solid raw material will take away heat, but it is also desirable to stabilize at a stable temperature.

[0070] For example, in step S120, the opening degree of the regulating valve 150 provided at the outlet 231 of the flow stabilizing chamber 2 can be adjusted according to the pressure of the gas discharged from the crucible device 100 to control the heating mode of the sublimation chamber 1. Step S120 may include: adjusting the opening degree of the regulating valve 150 within a preset opening degree range. The preset opening degree range can be 10% to 90%, for example, 20% to 80%. By adjusting only the regulating valve 150 to maintain temperature stability, a rapid response can be achieved, ensuring stable flow.

[0071] Step S120 may further include: heating the sublimation chamber 1 in response to the opening degree of the regulating valve 150 reaching the upper limit of the preset opening degree range; and cooling the sublimation chamber 1 in response to the opening degree of the regulating valve 150 reaching the lower limit of the preset opening degree range.

[0072] refer to Figure 6 At time t1, sublimation chamber 1 reaches the process temperature, but the gas pressure is still unstable and tends to increase. At this point, the flow rate can be controlled based on both temperature and the opening of regulating valve 150. For example, the opening of regulating valve 150 can be lowered initially, and when it reaches the lower limit of the preset opening range, the temperature of sublimation chamber 1 can be reduced. Exemplarily, adjustment can occur at times t2, t3, and t4. After time t5, the gas pressure fluctuation is small, and the airflow is stable. Afterward, only the opening of regulating valve 150 can be controlled without adjusting the temperature of sublimation chamber 1.

[0073] The method S100 for controlling the crucible device according to the embodiments of this application can control the gas flow rate to match the sublimation rate of the solid raw material and easily achieve steady flow control; after steady flow, it can be quickly adjusted by the regulating valve 150 to further ensure steady flow.

[0074] When cooling the sublimation chamber 1 in step S130, the temperature of the sublimation chamber 1 can be reduced to one-third of the sublimation temperature of the solid raw material, and the opening of the regulating valve 150 can be adjusted to the maximum. Then, step S140 is executed, and in response to the absence of airflow from the flow stabilizing chamber 2, the flow stabilizing chamber 2 is cooled. The method S100 for controlling the crucible device according to this embodiment of the application can achieve closed-loop control of the solid source flow rate, avoid condensation, and solve the problem of ineffective control of the solid source flow rate.

[0075] The processor 1100 is capable of running a computer program product. When the processor 1100 executes the computer program product, it can implement the steps of the method S100 for controlling the crucible apparatus.

[0076] The ion implanter 2000 of this application embodiment may include a control system for controlling various devices. The crucible device 100 can be controlled by the control system. The crucible device 100 can be well integrated into the overall machine, with complete communication and control units, and there are no implementation obstacles. The ion implanter 2000 operates stably and has a high product yield.

[0077] The crucible device 100 of this embodiment has a simple structure. The design of the flow stabilizing chamber 2 effectively ensures stable flow, cleverly bypassing the technical obstacle that solid sources cannot use MFC, reducing the pressure of PID regulation, making the control more stable, and realizing precise control of the flow rate after sublimation of solid raw materials, filling a gap in the industry. The control logic of the crucible device 100 is clear and explicit, and the flow rate of the solid source is controlled by monitoring and analyzing the high vacuum air pressure. In the closed-loop control system, the processor 1100, the PID controller 1300 and other controllers work together to ensure both precise control of the solid source flow rate and to ensure that the passage is not blocked.

[0078] The technical features of the above-disclosed embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0079] In the embodiments disclosed above, unless otherwise explicitly specified and limited, the execution order of each step is not restricted. For example, they can be executed in parallel or sequentially in different orders. The sub-steps of each step can also be executed alternately. Various forms of processes described above can be used, and steps can be reordered, added, or deleted, as long as the desired result of the technical solution provided in this application can be achieved, and this application does not impose any restrictions here.

[0080] The embodiments disclosed above merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of patent protection of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of patent protection claimed by this application. Therefore, the scope of patent protection of this application should be determined by the appended claims.

Claims

1. A crucible apparatus, characterized in that, include: A crucible, comprising a sublimation chamber and a flow-stabilizing chamber connected to the sublimation chamber, the sublimation chamber being used to hold solid raw materials, the cross-sectional area of ​​the flow-stabilizing chamber being larger than the cross-sectional area of ​​the sublimation chamber; A heat-insulating heater is used to heat the flow-stabilizing cavity.

2. The crucible apparatus according to claim 1, characterized in that, The first section of the flow stabilizing cavity connected to the sublimation cavity has a funnel shape with a gradually increasing cross-sectional area; The ratio of the cross-sectional area of ​​the second section of the stabilizing cavity to the cross-sectional area of ​​the sublimation cavity is between 1 and 50.

3. The crucible apparatus according to claim 1, characterized in that, The sublimation chamber and the flow stabilizing chamber are arranged laterally, and the crucible further includes a partition plate disposed between the sublimation chamber and the flow stabilizing chamber and at least separating the lower part of the sublimation chamber; The outlet of the flow stabilizing cavity is located along the transverse side of the sublimation cavity at a position not blocked by the partition.

4. The crucible apparatus according to claim 3, characterized in that, It also includes a sublimation heater for heating the lower part of the sublimation chamber; and a heat-insulating heater for heating the lower part of the flow-stabilizing chamber.

5. The crucible apparatus according to claim 1, characterized in that, It also includes a temperature sensor, which is disposed in the flow stabilizing cavity and is disposed opposite to the heat preservation heater; The material of the flow stabilizing cavity includes metal.

6. The crucible apparatus according to claim 1, characterized in that, It also includes a regulating valve, which is disposed at the outlet of the flow stabilizing chamber; The regulating valve is made of the same material as the flow stabilizing chamber; the sublimation chamber is made of quartz.

7. A method for controlling a crucible apparatus, characterized in that, The crucible apparatus is the crucible apparatus as described in any one of claims 1 to 6, and the method comprises: The flow stabilizing chamber is kept at least at the sublimation temperature of the solid raw material, and the sublimation chamber is heated to sublimate the solid raw material; Cooling the sublimation chamber; and In response to the absence of airflow from the flow stabilizing cavity, the flow stabilizing cavity is cooled.

8. The method for controlling a crucible apparatus according to claim 7, characterized in that, The opening of the regulating valve at the outlet of the flow stabilizing chamber is adjusted according to the pressure of the gas discharged from the crucible device to control the heating mode of the sublimation chamber, including: Adjust the opening degree of the regulating valve within a preset opening degree range; In response to the control valve opening reaching the upper limit of the preset opening range, the sublimation chamber is heated; and In response to the control valve opening reaching the lower limit of the preset opening range, the sublimation chamber is cooled down.

9. An ion source device, characterized in that, include: The crucible apparatus as described in any one of claims 1 to 6; The reaction chamber device includes an arc-starting chamber and a vacuum pressure sensor. The arc-starting chamber is connected to the flow stabilizing chamber of the crucible device, and the vacuum pressure sensor is used to measure the pressure of the gas discharged from the crucible device. as well as A control device for controlling the crucible apparatus to perform the steps of the method for controlling the crucible apparatus as described in claim 7 or 8.

10. An ion implanter, characterized in that, include: Injection cavity; and The ion source device as described in claim 9.

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