Substrate cleaning apparatus and substrate processing system including the same

Abstract

There may be provided a substrate cleaning apparatus including: a first processing chamber configured to perform plasma processing on a first substrate and a second substrate; a substrate cleaning device configured to clean the first substrate and the second substrate; and a second process chamber configured to bond the first substrate and the second substrate to each other, in which the substrate cleaning apparatus is further configured to remove foreign matter adhering to the first substrate and the second substrate using a cleaning liquid and a brush, and in which the cleaning liquid is separated from the brush. The second processing chamber is further configured to bond the first substrate and the second substrate to each other after the substrate cleaning device cleans the first substrate and the second substrate.

Description

Cross Reference to Related Applications

[0001] This application claims priority to Korean Patent Application No. 10-2024-0077445, filed on June 14, 2024, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] Embodiments of the present disclosure relate to a substrate cleaning apparatus capable of being provided to a facility that produces semiconductor packages or electronic products, and a substrate processing system including the same. BACKGROUND

[0003] A substrate for producing a semiconductor package such as high bandwidth memory (HBM) can be bonded to another substrate. However, due to various factors, foreign substances can exist on the surface of the substrate. Therefore, before bonding the substrate to another substrate, the foreign substances need to be removed through a cleaning process.

[0004] For the cleaning process, chemicals or deionized water (DIW) can be used. However, this method has limitations in removing foreign substances that are strongly adhered to the substrate. SUMMARY

[0005] According to embodiments of the present disclosure, a substrate cleaning apparatus that removes foreign substances using a brush and a substrate processing system including the same are provided.

[0006] According to embodiments of the present disclosure, a substrate cleaning apparatus can be provided, including: a first processing chamber configured to perform plasma processing on a first substrate and a second substrate; a substrate cleaning apparatus configured to clean the first substrate and the second substrate; and a second processing chamber configured to bond the first substrate and the second substrate to each other, wherein the substrate cleaning apparatus is further configured to remove foreign substances adhered to the first substrate and the second substrate using a cleaning liquid and a brush, and wherein the second processing chamber is further configured to bond the first substrate and the second substrate to each other after the substrate cleaning apparatus cleans the first substrate and the second substrate.

[0007] According to embodiments of the present disclosure, a substrate cleaning apparatus can be provided, including: a substrate support configured to support a substrate; a first liquid supplier configured to supply a first liquid to a first surface of the substrate; a second liquid supplier configured to supply a second liquid to a second surface of the substrate; and a foreign substance remover configured to remove foreign substances from the second surface by contacting the second surface, wherein the foreign substance remover is further configured to remove the foreign substances using the second liquid and a brush, wherein the foreign substance remover is further configured to rotate while contacting the second surface, and wherein the foreign substance remover is further configured to flip or move vertically based on whether the substrate cleaning apparatus is in cleaning.

[0008] According to embodiments of the disclosure, a substrate cleaning apparatus can be provided, which includes a first processing chamber configured to perform plasma processing on a first substrate and a second substrate, a substrate cleaning apparatus configured to clean the first substrate and the second substrate and remove foreign substances adhered to the first substrate and the second substrate using a cleaning liquid and a brush, and a second processing chamber configured to bond the first substrate and the second substrate to each other, wherein the substrate cleaning apparatus includes a substrate support configured to support the first substrate, a first liquid supplier configured to supply a first liquid to a first surface of the first substrate, a second liquid supplier configured to supply a second liquid to a second surface of the first substrate, and a foreign substance remover configured to remove foreign substances from the second surface by contacting the second surface, wherein the foreign substance remover is further configured to rotate while contacting the second surface, wherein the foreign substance remover is further configured to move inward or outward of the first substrate while contacting the second surface, wherein the foreign substance remover is further configured to flip or move vertically based on whether the substrate cleaning apparatus is performing cleaning, wherein the foreign substance remover and the second liquid supplier are configured to operate simultaneously, and wherein the second processing chamber is further configured to bond the first substrate and the second substrate after the substrate cleaning apparatus cleans the first substrate and the second substrate.

[0009] Aspects and effects of embodiments of the disclosure are not limited to the above-mentioned aspects and effects, and other aspects and effects not mentioned will be clearly understood by those skilled in the art from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0010] The above and other aspects and features of the disclosure will become clearer after a detailed description of example embodiments thereof is given below with reference to the attached drawings, in which:

[0011] Figure 1 is a first example diagram for illustrating an internal structure of a substrate processing system according to some embodiments of the disclosure.

[0012] Figure 2 is a second example diagram for illustrating an internal structure of a substrate processing system according to some embodiments of the disclosure.

[0013] Figure 3 is a third example diagram for illustrating an internal structure of a substrate processing system according to some embodiments of the disclosure.

[0014] Figure 4 is a fourth example diagram for illustrating an internal structure of a substrate processing system according to some embodiments of the disclosure.

[0015] Figure 5FIG. 1 is a first exemplary diagram for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0016] Figure 6 FIG. 2 is a first exemplary diagram for illustrating a substrate support of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0017] Figure 7 FIG. 3 is a second exemplary diagram for illustrating a substrate support of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0018] Figure 8 FIG. 4 is a first exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0019] Figure 9 FIG. 5 is a second exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0020] Figure 10 FIG. 6 is a third exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0021] Figure 11 FIG. 7 is a fourth exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0022] Figure 12 FIG. 8 is a fifth exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0023] Figure 13 FIG. 9 is a sixth exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0024] Figure 14 FIG. 10 is a seventh exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0025] Figure 15 FIG. 11 is an eighth exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0026] Figure 16 FIG. 12 is a ninth exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0027] Figure 17 FIG. 13 is a tenth exemplary diagram for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0028] Figure 18is a first example diagram for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0029] Figure 19 is a second example diagram for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0030] Figure 20 is a third example diagram for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0031] Figure 21 is a fourth example diagram for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0032] Figure 22 is a first example diagram for illustrating a liquid supplier of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0033] Figure 23 is a second example diagram for illustrating a liquid supplier of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0034] Figure 24 is a fifth example diagram for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the disclosure. DETAILED DESCRIPTION

[0035] Hereinafter, non-limiting example embodiments of the disclosure will be described with reference to the accompanying drawings. In the drawings, the same reference numerals are used for the same components, and repetitive explanation of the components can be omitted.

[0036] It will be understood that when an element or layer is referred to as being "on", "connected to", or "coupled to" another element or layer, it can be directly on, directly connected to, or directly coupled to the other element or layer, or intervening elements or layers can be present. In contrast, when an element or layer is referred to as being "directly on", "directly connected to", or "directly coupled to" another element or layer, there are no intervening elements or layers present.

[0037] Figure 1 is a first example diagram for illustrating an internal structure of a substrate processing system according to some embodiments of the disclosure. According to Figure 1 , the substrate processing system 100 can include a load port module 110a, an indexing module 110b, a buffer chamber 120, a first transfer module 130a, a second transfer module 130b, a load lock chamber 140, a first processing chamber 150a, a second processing chamber 150b, and a substrate cleaning apparatus 200.

[0038] The first direction D1 and the second direction D2 can define a two-dimensional plane. The first direction D1 can be an X-axis direction, and the second direction D2 can be a Y-axis direction. The first direction D1 can be a left-right direction, and the second direction D2 can be a front-back direction. Alternatively, the first direction D1 can be a front-back direction, and the second direction D2 can be a left-right direction. The third direction D3 together with the first direction D1 and the second direction D2 can define a three-dimensional structure. The third direction D3 can be a direction perpendicular to a plane defined by the first direction D1 and the second direction D2. The third direction D3 can be a Z-axis direction. The third direction D3 can be a vertical direction.

[0039] The substrate processing system 100 can join the first substrate and the second substrate to each other. Each of the first substrate and the second substrate can be a wafer. The substrate processing system 100 can perform a plasma treatment on the first substrate and the second substrate before joining the first substrate and the second substrate to each other. The substrate processing system 100 can clean the first substrate and the second substrate before joining the first substrate and the second substrate to each other. The substrate processing system 100 can be provided as a substrate joining facility.

[0040] The substrate processing system 100 can include the substrate cleaning device 200. The substrate cleaning device 200 can clean the first substrate and the second substrate after performing a plasma treatment on the first substrate and the second substrate. The substrate cleaning device 200 can be a processing chamber within the substrate processing system 100. A more detailed description of the substrate cleaning device 200 will be set forth later.

[0041] The load port module 110a can be configured such that a container can be seated therein. The container can house a plurality of substrates therein. For example, the container can be a front opening unified pod (FOUP). The container can be loaded into or unloaded from the load port module 110a. Further, the substrates stored in the container can be loaded into or unloaded from the load port module 110a.

[0042] A plurality of containers can be seated in the load port module 110a. The plurality of containers can house the same type of objects therein. For example, each of the first container, the second container, and the third container can house wafers. However, embodiments of the present disclosure are not limited thereto, and the containers can house different types of objects from each other therein. For example, the first container can house wafers, the second container can house wafer-type sensors, and the third container can house expendables such as focus rings. Alternatively, some of the plurality of containers can house the same type of products therein, and other containers can house different types of products.

[0043] An indexing module 110b can be provided behind the load port module 110a. The indexing module 110b can be provided as an interface such that the substrates can be transferred between the load port module 110a and the buffer chamber 120. According to embodiments, the indexing module 110b can include a transfer robot for loading and unloading the substrates. The transfer robot can load and unload the substrates under an atmospheric pressure environment. The load port module 110a and the indexing module 110b can constitute an equipment front end module (EFEM) 110.

[0044] The buffer chamber 120 can house the substrates therein. The buffer chamber 120 can temporarily house the unprocessed substrates before being transferred to the load lock chamber 140. The buffer chamber 120 can temporarily house the processed substrates before being transferred to the containers in the load port module 110a.

[0045] The buffer chamber 120 can be provided behind the indexing module 110b. The transfer robot provided within the indexing module 110b can load or unload the substrates into or from the buffer chamber 120. The buffer chamber 120 can be adjacent to the first transfer module 130a. The transfer robot provided within the first transfer module 130a can load or unload the substrates into or from the buffer chamber 120.

[0046] The first transfer module 130a can be provided as an interface for transferring the substrates between the buffer chamber 120 and the load lock chamber 140. The first transfer module 130a can be provided as an interface for transferring the substrates between the load lock chamber 140 and the substrate cleaning device 200. The first transfer module 130a can be provided as an interface for transferring the substrates between the substrate cleaning device 200 and the second processing chamber 150b. The first transfer module 130a can be surrounded by the buffer chamber 120, the load lock chamber 140, the second processing chamber 150b, the substrate cleaning device 200, etc.

[0047] Similar to the indexing module 110b, the first transfer module 130a can include a transfer robot for loading or unloading the substrates. The transfer robot provided within the indexing module 110b and the transfer robot provided within the first transfer module 130a can load or unload the substrates in the same environment. The transfer robot provided within the first transfer module 130a can load or unload the substrates under an atmospheric pressure environment.

[0048] The load lock chamber 140 can house the substrates therein. The load lock chamber 140, when provided between the first transfer module 130a and the second transfer module 130b, can temporarily house the unprocessed substrates and the processed substrates therein. According to embodiments, the load lock chamber 140 can include a buffer platform for temporarily housing the substrates therein.

[0049] A plurality of buffer stages can be provided within the load lock chamber 140. For example, a first buffer stage and a second buffer stage can be provided in the load lock chamber 140. The first buffer stage can store unprocessed substrates, and the second buffer stage can store processed substrates. However, embodiments of the present disclosure are not limited thereto, and each of the first buffer stage and the second buffer stage can also store substrates therein regardless of whether the substrates have been processed. Each of the first buffer stage and the second buffer stage can store a single substrate or store a plurality of substrates therein.

[0050] The second transfer module 130b can be provided as an interface for transferring substrates between the load lock chamber 140 and the first processing chamber 150a. Like the first transfer module 130a, the second transfer module 130b can include a transfer robot for loading and unloading substrates. The transfer robot provided within the first transfer module 130a and the transfer robot provided within the second transfer module 130b can load or unload substrates in different environments from each other. The transfer robot provided within the second transfer module 130b can load or unload substrates in a vacuum environment.

[0051] The first processing chamber 150a can perform a plasma process on a substrate. The first processing chamber 150a can form dangling bonds on a surface of a substrate. First, a process gas can be supplied into the first processing chamber 150a, and the process gas is excited in a vacuum environment such that the process gas is converted into plasma to generate ions and active species. When the ions and the active species are later irradiated to a surface of a substrate, the surface of the substrate can be modified such that dangling bonds can be formed.

[0052] The first processing chamber 150a can process a substrate using inductively coupled plasma (ICP). However, embodiments of the present disclosure are not limited thereto, and the first processing chamber 150a can process a substrate using capacitively coupled plasma (CCP). Alternatively, the first processing chamber 150a can process a substrate using microwave plasma.

[0053] The substrate cleaning apparatus 200 can process a substrate provided after the first processing chamber 150a has processed the substrate. The substrate cleaning apparatus 200 can clean a substrate. The substrate cleaning apparatus 200 can process a substrate using a wet method. The substrate cleaning apparatus 200 can process a substrate using a chemical, deionized water (DIW), or the like. The substrate cleaning apparatus 200 not only cleans a surface of a substrate, but also allows -OH groups, water molecules, or the like to be well bonded to the surface of the substrate, thereby making bonding between substrates easier.

[0054] The second processing chamber 150b can join the first substrate and the second substrate to each other. The first substrate can be a substrate processed by the first processing chamber 150a and the substrate cleaning device 200. The second substrate can be a substrate processed by the first processing chamber 150a and the substrate cleaning device 200. For example, the first substrate can be a substrate on which a circuit for an image sensor chip is formed, and the second substrate can be a substrate on which a light-receiving sensor for the image sensor chip is formed. Alternatively, the first substrate can be a substrate on which a circuit for a semiconductor package such as an HBM is formed, and the second substrate can be a substrate on which a memory for the semiconductor package is formed.

[0055] According to an embodiment, the second processing chamber 150b can include an upper chuck structure, a lower chuck structure, a push rod, etc. The upper chuck structure can adsorb and fix the first substrate via an upper stage. The lower chuck structure can adsorb and fix the second substrate by a lower stage. The push rod can press the first substrate and / or the second substrate.

[0056] The buffer chamber 120 can be adjacent to the first transfer module 130a and spaced apart from the indexing module 110b. In this case, the first transfer module 130a can be adjacent to the indexing module 110b. For example, the buffer chamber 120 can be communicatively connected to the indexing module 110b via the first transfer module 130a. However, embodiments of the disclosure are not limited thereto. Referring to Figure 2 , the buffer chamber 120 can be disposed between the first transfer module 130a and the indexing module 110b. The first transfer module 130a can be spaced apart from the indexing module 110b. For example, the first transfer module 130a can be communicatively connected to the indexing module 110b via the buffer chamber 120. Figure 2 is a second example diagram for illustrating an internal structure of a substrate processing system according to some embodiments of the disclosure.

[0057] The substrate processing system 100 can further include a third transfer module 130c. Figure 3 is a third example diagram for illustrating an internal structure of a substrate processing system according to some embodiments of the disclosure.

[0058] The third transfer module 130c can be provided as an interface for transferring a substrate between the first transfer module 130a and the second processing chamber 150b. Like the first transfer module 130a, the third transfer module 130c can include a transfer robot for loading and unloading a substrate. The transfer robot disposed within the first transfer module 130a and the transfer robot disposed within the first transfer module 130c can load and unload a substrate in the same environment. The transfer robot disposed within the third transfer module 130c can load or unload a substrate in an atmospheric pressure environment.

[0059] The transfer robot provided in the third transfer module 130c can flip the substrate. The transfer robot provided in the third transfer module 130c can include a cooling plate. The cooling plate can cool the first substrate and the second substrate before the first substrate and the second substrate are joined to each other. When the substrate processing system 100 does not include the third transfer module 130c, the transfer robot provided in the first transfer module 130a can include the cooling plate.

[0060] A plurality of transfer robots can be provided within the third transfer module 130c. For example, a first substrate robot and a second substrate robot can be provided in the third transfer module 130c. The first substrate robot can load the first substrate and the second substrate robot can load the second substrate when the substrates are introduced into the second processing chamber 150b. Each of the first substrate robot and the second substrate robot can load a designated substrate. However, embodiments of the disclosure are not limited thereto. The first substrate robot can load the substrate provided first among the first substrate and the second substrate, and the second substrate robot can load the substrate provided later among the first substrate and the second substrate. Each of the first substrate robot and the second substrate robot can load a non-designated substrate.

[0061] In one example, a single transfer robot can be provided within the third transfer module 130c. Figure 3 The examples in Figure 2 The examples in Figure 1 may be equally applied to Figure 1 and / or Figure 2 The examples shown in

[0062] The substrate processing system 100 can further include a third processing chamber 150c. Figure 4 is a fourth example view for illustrating an internal structure of a substrate processing system according to some embodiments of the disclosure.

[0063] The third processing chamber 150c can inspect the substrate. The third processing chamber 150c can inspect the joined substrate after the first substrate and the second substrate have been joined to each other by the second processing chamber 150b. The third processing chamber 150c can inspect whether a bonding state between the first substrate and the second substrate is good.

[0064] Similar to the second processing chamber 150b, the third processing chamber 150c can be provided adjacent to the first transfer module 130a. The transfer robot provided in the first transfer module 130a can provide the substrate processed by the second processing chamber 150b to the third processing chamber 150c.

[0065] In one example, Figure 4 The examples in Figure 2the examples in Figure 1 the examples in Figure 4 the examples in Figure 3 the examples in Figure 4 the examples in Figure 2 the examples in

[0066] According to embodiments, the substrate processing system 100 can further include a control device. The control device can include a processor to control each component of the substrate processing system 100, a network to communicate with each component in a wired or wireless manner, one or more instructions related to a function or operation for controlling each component, and a memory to store the one or more instructions, a process recipe, and various data therein. The control device can further include a user interface including an input device (e.g., an inputter) for an operator to input a command to manage the substrate processing system 100, an output device (e.g., an outputter) to visualize and display an operation state of the substrate processing system 100, and the like. The control device can be a computing device for data processing and analysis, command transmission, and the like.

[0067] The instructions can be provided in the form of a computer program or an application. The computer program can include one or more instructions and be stored in a computer-readable recording medium (e.g., a memory). The instructions can include code generated by a compiler or code that can be executed by an interpreter, and the like. The memory can be provided as one or more storage media selected from, for example, a flash memory, a hard disk drive (HDD), a solid state drive (SSD), a card-type memory, a random access memory (RAM), a static random access memory (SRAM), a read-only memory (ROM), an electrically erasable programmable read-only memory (EEPROM), a programmable read-only memory (PROM), a magnetic memory, a magnetic disk, and an optical disk.

[0068] Referring to Figure 1 , the substrate cleaning device 200 can clean a substrate. In this regard, the substrate can be a first substrate or a second substrate. Alternatively, the substrate can include both the first substrate and the second substrate.

[0069] The substrate cleaning device 200 can include a brush. The substrate cleaning device 200 can use the brush to remove foreign substances present on a surface of a substrate. For example, the foreign substances can be particles. The substrate cleaning device 200 can use the brush to effectively remove foreign substances strongly adhered to the substrate.

[0070] Figure 5 is a first example view for illustrating an internal structure of a substrate cleaning device according to some embodiments of the disclosure. Referring to Figure 5The substrate cleaning apparatus 200 can include a substrate support 210, a first liquid supplier 220, a second liquid supplier 230, and a foreign matter remover 240.

[0071] The substrate support 210 can support the substrate WF. The substrate support 210 can support the substrate WF while the substrate WF is being cleaned. Referring to FIG. 1, Figure 6 The width W1 of the substrate support 210 can be less than the width W2 of the substrate WF (W1 < W2). The substrate support 210 can support a central portion of the substrate WF. Figure 6 FIG. 1 is a first example view for illustrating a substrate support of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0072] The substrate support 210 can adsorb the substrate WF. The substrate support 210 can adsorb the substrate WF when the substrate WF is seated on the top of the substrate support 210. The substrate support 210 can adsorb the substrate WF while the substrate cleaning apparatus 200 is cleaning the substrate WF. The substrate support 210 can be a vacuum chuck. Referring to FIG. 1, Figure 7 The substrate support 210 can include a plurality of holes 320a, 320b, …, 320n passing through the main body 310 in the vertical direction D3. Each of the holes 320a, 320b, …, 320n can generate a vacuum state. The substrate cleaning apparatus 200 can further include a vacuum generator 330 for putting each of the holes 320a, 320b, …, 320n in the vacuum state. For example, the vacuum generator 330 can be a vacuum pump. Figure 7 FIG. 2 is a second example view for illustrating a substrate support of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0073] The substrate support 210 can rotate the substrate WF. The substrate support 210 can rotate the substrate WF while the substrate cleaning apparatus 200 is cleaning the substrate WF. The substrate support 210 can rotate the substrate WF after the substrate support 210 has adsorbed the substrate WF. The substrate support 210 can be provided as a spin chuck. According to embodiments, the substrate cleaning apparatus 200 can further include a power source and a motor. The power source can provide electric energy to the motor. The motor can convert the electric energy into kinetic energy to rotate a shaft. The main body 310 and the substrate WF seated on the top thereof can rotate together with the shaft.

[0074] Referring to FIG. 1, Figure 5 The first liquid supplier 220 and the second liquid supplier 230 can provide liquid to the surface of the substrate WF. The first liquid supplier 220 and the second liquid supplier 230 can provide liquid to different surfaces of the substrate WF, respectively. For example, the first liquid supplier 220 can provide liquid to the upper surface of the substrate WF, and the second liquid supplier 230 can provide liquid to the lower surface of the substrate WF.

[0075] The first liquid supplier 220 and the second liquid supplier 230 can provide the same type of liquid. For example, the first liquid supplier 220 and the second liquid supplier 230 can provide deionized water (DIW). However, embodiments of the present disclosure are not limited thereto, and the first liquid supplier 220 and the second liquid supplier 230 can also provide different types of liquid, respectively. For example, the first liquid supplier 220 can provide a chemical, and the second liquid supplier 230 can provide deionized water. For example, the chemical can be isopropyl alcohol (IPA).

[0076] The substrate cleaning apparatus 200 can clean the upper surface and the lower surface of the substrate WF at the same time. In this case, the first liquid supplier 220 and the second liquid supplier 230 can provide liquid at the same time. The substrate cleaning apparatus 200 can sequentially clean the upper surface and the lower surface of the substrate WF. In this case, the first liquid supplier 220 and the second liquid supplier 230 can sequentially provide liquid.

[0077] Each of the first liquid supplier 220 and the second liquid supplier 230 can be formed to have a length direction that is not parallel to the width direction D1 or D2 of the substrate WF. For example, each of the first liquid supplier 220 and the second liquid supplier 230 can be formed to have a length direction that is inclined with respect to the width direction D1 or D2 of the substrate WF. However, embodiments of the present disclosure are not limited thereto, and each of the first liquid supplier 220 and the second liquid supplier 230 can be formed to have a length direction that is a vertical direction D3 perpendicular to the width direction D1 or D2 of the substrate WF. The first liquid supplier 220 can have the same length direction as the length direction of the second liquid supplier 230, or can have a different length direction from the length direction of the second liquid supplier 230. According to an embodiment, the length direction can be a central axis along which the first liquid supplier 220 or the second liquid supplier 230 outputs liquid.

[0078] The first liquid supplier 220 and the second liquid supplier 230 can provide liquid in the same discharge scheme. For example, the first liquid supplier 220 and the second liquid supplier 230 can provide liquid in an atomization scheme. However, embodiments of the present disclosure are not limited thereto, and the first liquid supplier 220 and the second liquid supplier 230 can provide liquid in different discharge schemes, respectively. For example, the first liquid supplier 220 can provide liquid in a drop scheme, and the second liquid supplier 230 can provide liquid in an atomization scheme. A more detailed description of the atomization scheme and the drop scheme is provided later.

[0079] The foreign matter remover 240 can remove foreign matter adhered to a surface of the substrate WF. The foreign matter remover 240 can be disposed at a vertical level lower than a vertical level of the substrate WF. The foreign matter remover 240 can be disposed at a vertical level identical to a vertical level of the substrate support 210. Alternatively, the foreign matter remover 240 can be disposed at a vertical level lower than a vertical level of the substrate support 210. The foreign matter remover 240 can remove foreign matter from a lower surface of the substrate WF.

[0080] The substrate cleaning device 200 can clean the first substrate and the second substrate before the first substrate and the second substrate are bonded to each other in the second processing chamber 150b. The foreign matter remover 240 can remove foreign matter from a surface of the first substrate before the first substrate and the second substrate are bonded to each other. In addition, the foreign matter remover 240 can remove foreign matter from a surface of the second substrate before the first substrate and the second substrate are bonded to each other.

[0081] The foreign matter remover 240 can remove foreign matter from a surface of the substrate WF using a brush. The foreign matter remover 240 can remove foreign matter from one portion of the substrate WF. For example, the foreign matter remover 240 can remove foreign matter from an edge region of the substrate WF. Generally, a large number of voids can occur in the edge region when the first substrate and the second substrate are bonded to each other. In the present embodiment, in consideration of this, the foreign matter remover 240 can remove foreign matter from the edge region of the substrate WF. However, embodiments of the present disclosure are not limited thereto, and the foreign matter remover 240 can remove foreign matter from the entire region of the substrate WF.

[0082] Referring to Figure 8 , the foreign matter remover 240 can include a power source 410, a motor 420, a shaft 430, and a brush 440. Figure 8 is a first example view illustrating a foreign matter remover of a substrate cleaning device according to some embodiments of the present disclosure.

[0083] The power source 410 can supply electric energy to the motor 420. The motor 420 can convert the electric energy into kinetic energy to rotate the shaft 430. The shaft 430 can rotate clockwise. Alternatively, the shaft 430 can rotate counterclockwise. The brush 440 can be connected to the shaft 430 and rotate in the same direction as a rotation direction of the shaft 430. The brush 440 can perform a spinning motion. The brush 440 can contact a surface of the substrate WF. The brush 440 can remove foreign matter from the surface of the substrate WF while rotating in contact with the surface of the substrate WF. The brush 440 can be made of a resin-based material to avoid damaging the surface of the substrate WF when removing foreign matter from the surface of the substrate WF. For example, the brush 440 can be made of a polyvinyl acetate (PVA) resin.

[0084] Referring to Figure 9, the brush 440 can rotate clockwise or counterclockwise about a rotation axis extending in a direction D3 perpendicular to the width direction D1 or D2 of the substrate WF. However, embodiments of the present disclosure are not limited thereto. Referring to Figure 10 , the brush 440 can also rotate clockwise or counterclockwise about a rotation axis extending in parallel with the width direction D1 or D2 of the substrate WF. The rotation axis of the brush 440 can be disposed below the main body 310 of the substrate support 210 that attracts the substrate WF, to shorten the brush movement. The rotation axis of the brush 440 can be configured as a brush shaft rotation structure. Figure 9 is a second example view for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure. Figure 10 is a third example view for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0085] The brush 440 can be operated simultaneously with the operation of the second liquid supplier 230. While the second liquid supplier 230 provides liquid to the lower surface of the substrate WF, the brush 440 can contact the surface of the substrate WF and rotate. The liquid provided by the second liquid supplier 230 can constitute a water film on the lower surface of the substrate WF. When the brush 440 removes foreign matter, the water film can minimize direct contact between the substrate WF and the brush 440. When the second liquid supplier 230 and the brush 440 are simultaneously operated with each other, damage to the lower surface of the substrate WF can be prevented.

[0086] The brush 440 can rotate and simultaneously move in a direction parallel to the width direction D1 or D2 of the substrate WF. The brush 440 can perform a wobbling motion. Referring to Figure 11 , the brush 440 can move in an outward direction while rotating. The brush 440 can move in the outward direction while contacting the surface of the substrate WF. The brush 440 can move linearly in the outward direction. Alternatively, the brush 440 can move curvilinearly in the outward direction. Referring to Figure 12 , the brush 440 can move in an inward direction while rotating. The brush 440 can move in the inward direction while contacting the surface of the substrate WF. The brush 440 can move linearly in the inward direction. Alternatively, the brush 440 can move curvilinearly in the inward direction. Rotating and simultaneously moving the brush 440 in the horizontal direction can allow uniform cleaning of the entire area of the lower surface of the substrate WF. Figure 11 is a fourth example view for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure. Figure 12 is a fifth example view for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0087] The foreign matter remover 240 can remove foreign matter while the substrate WF is rotating. In this case, the rotation direction of the brush 440 can be opposite to the rotation direction of the substrate WF. (Reference) Figure 13 When brush 440 uses the vertical direction D3 as its axis of rotation, as... Figure 9 As shown in the example, the substrate WF can rotate counterclockwise, and the brush 440 can rotate clockwise. Alternatively, according to an embodiment, the substrate WF can rotate clockwise, and the brush 440 can rotate counterclockwise. Furthermore, refer to... Figure 14 When brush 440 uses the horizontal direction D1 or D2 as its axis of rotation, such as Figure 10 As shown in the example, the substrate WF can rotate counterclockwise, and the brush 440 can rotate clockwise. Alternatively, according to the embodiment, the substrate WF can rotate clockwise, and the brush 440 can rotate counterclockwise. In one example, when the brush 440 has the vertical direction D3 as its axis of rotation, the rotation direction of the brush 440 can be the same as the rotation direction of the substrate WF. Figure 13 This is a sixth example diagram illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure. Figure 14 This is a seventh example diagram illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0088] The 440 brush can perform a flipping motion. (Reference) Figure 15 The upper surface of brush 440 is typically not facing the substrate WF. When cleaning of the substrate WF begins, the upper surface of brush 440 can be rotated during a flipping motion to face the substrate WF. When cleaning of the substrate WF is complete, the upper surface of brush 440 can be rotated again during a flipping motion so that the upper surface is not facing the substrate WF. The upper surface of brush 440 can then be returned to its original orientation. Figure 15 This is an eighth example diagram illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0089] The 440 brush can move up and down. (Reference) Figure 16 Typically, brush 440 can be positioned at a vertical height where it does not contact the lower surface of substrate WF. When cleaning of substrate WF begins, brush 440 can move upward to contact the lower surface of substrate WF. When cleaning of substrate WF is complete, brush 440 can descend so that it no longer contacts the lower surface of substrate WF. Brush 440 can return to its original position. Figure 16 This is a ninth example diagram illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0090] The foreign object remover 240 may also include a contact force measuring sensor 460. (Reference) Figure 17The contact force measurement sensor 460 can measure a contact force when the brush 440 contacts the lower surface of the substrate WF. The foreign matter remover 240 can control the vertical movement of the brush 440 based on the measured value of the contact force measurement sensor 460. The foreign matter remover 240 can adjust the contact force when the brush 440 contacts the lower surface of the substrate WF based on the measured value of the contact force measurement sensor 460. Using the contact force measurement sensor 460, the foreign matter remover 240 can prevent the brush 440 from damaging the substrate WF by pressing the substrate with a strong force.

[0091] The contact force measurement sensor 460 can be installed on the shaft 430. The contact force measurement sensor 460 can be disposed below the brush 440 to measure a load. For example, the contact force measurement sensor 460 can be a load cell. Figure 17 is a tenth example view for illustrating a foreign matter remover of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0092] When both the upper surface and the lower surface of the substrate WF are cleaned, the first liquid supplier 220 can be used to clean the upper surface of the substrate WF, and the second liquid supplier 230 and the foreign matter remover 240 can be used to clean the lower surface of the substrate WF. That is, the foreign matter remover 240 can be used only to clean the lower surface of the substrate WF. However, embodiments of the disclosure are not limited thereto. The foreign matter remover 240 can be used not only to clean the lower surface of the substrate WF but also to clean the upper surface of the substrate WF. In this case, a plurality of foreign matter removers 240 can be provided, and the foreign matter removers 240 can be respectively disposed at a vertical height higher than the vertical height of the substrate support 210 and at a vertical height lower than the vertical height of the substrate support 210. Alternatively, the foreign matter remover 240 disposed at the vertical height lower than the vertical height of the substrate support 210 can be used to clean the lower surface of the substrate WF and then can be used to clean the upper surface of the substrate WF.

[0093] The foreign matter remover 240 can further include a drain cup 450. Referring to Figure 18 The drain cup 450 can be disposed below the brush 440. Water can be stored in the drain cup 450. As described before, the brush 440 can perform a flipping motion and a vertical motion. The brush 440 can normally (when the lower surface of the substrate WF is cleaned) move in or out of the drain cup 450 and can retain moisture stored in the drain cup 450. Even when a water film is not normally formed on the lower surface of the substrate WF, the brush 440 can minimize friction with the surface of the substrate WF. In addition, the water stored in the drain cup 450 can wash foreign matter adsorbed to the brush 440. The water from which the foreign matter has been washed off the brush 440 can be discharged to the outside, and new water can flow into the drain cup 450. Figure 18is a first example diagram for illustrating a substrate cleaning apparatus according to some embodiments of the disclosure.

[0094] The substrate cleaning apparatus 200 can use the second liquid supplier 230 and the foreign matter remover 240 continuously while cleaning the lower surface of the substrate WF. However, embodiments of the disclosure are not limited thereto. The substrate cleaning apparatus 200 can use the second liquid supplier 230 and the foreign matter remover 240 simultaneously during one partial cycle, and can use only the second liquid supplier 230 during another partial cycle. Alternatively, the simultaneous use of the second liquid supplier 230 and the foreign matter remover 240 and the use of only the second liquid supplier 230 can be repeated while cleaning the lower surface of the substrate WF.

[0095] Referring to Figure 19 , the substrate cleaning apparatus 200 can further include a first gas supplier 510 and a second gas supplier 520. Figure 19 is a second example diagram for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0096] The first gas supplier 510 and the second gas supplier 520 can supply gas to the surface of the substrate WF. The first gas supplier 510 and the second gas supplier 520 can supply gas to different surfaces of the substrate WF, respectively. For example, the first gas supplier 510 can supply gas to the upper surface of the substrate WF, and the second gas supplier 520 can supply gas to the lower surface of the substrate WF.

[0097] The substrate cleaning apparatus 200 can perform a drying process after a cleaning process. The substrate cleaning apparatus 200 can use the first liquid supplier 220, the second liquid supplier 230, and the foreign matter remover 240 when performing the cleaning process. The substrate cleaning apparatus 200 can remove foreign matter from the surface of the substrate WF by the cleaning process. The substrate cleaning apparatus 200 can use the first gas supplier 510 and the second gas supplier 520 when performing the drying process. The substrate cleaning apparatus 200 can remove moisture from the surface of the substrate WF by the drying process.

[0098] The first gas supplier 510 and the second gas supplier 520 can supply the same type of gas. For example, the first gas supplier 510 and the second gas supplier 520 can supply nitrogen gas N2. However, embodiments of the disclosure are not limited thereto, and the first gas supplier 510 and the second gas supplier 520 can also supply different types of gas, respectively. The first gas supplier 510 can supply a first gas, and the second gas supplier 520 can supply a second gas. The first gas and the second gas can not react with each other, and can be suitable gases for removing moisture from the surface of the substrate WF.

[0099] The substrate cleaning apparatus 200 can dry the upper surface and the lower surface of the substrate WF at the same time. In this case, the first gas supplier 510 and the second gas supplier 520 can supply the gas at the same time. The substrate cleaning apparatus 200 can sequentially dry the upper surface and the lower surface of the substrate WF. In this case, the first gas supplier 510 and the second gas supplier 520 can sequentially supply the gas. Each of the first gas supplier 510 and the second gas supplier 520 can be formed to have a length direction that is not parallel to the width direction D1 or D2 of the substrate WF. For example, each of the first gas supplier 510 and the second gas supplier 520 can be formed to have a length direction that is inclined with respect to the width direction D1 or D2 of the substrate WF. However, embodiments of the disclosure are not limited thereto, and each of the first gas supplier 510 and the second gas supplier 520 can also be formed to have a length direction that is perpendicular to the width direction D1 or D2 of the substrate WF (for example, the direction D3). The first gas supplier 510 can have the same length direction as the length direction of the second gas supplier 520, or can have a length direction different from the length direction of the second gas supplier 520. According to an embodiment, the length direction can be a central axis along which the first gas supplier 510 or the second gas supplier 520 outputs the gas.

[0100] According to an embodiment, the substrate cleaning apparatus 200 can include the first gas supplier 510, and can not include the second gas supplier 520. When the substrate cleaning apparatus 200 performs the drying process, the upper surface of the substrate WF can be dried by the gas supplied from the first gas supplier 510, and the lower surface of the substrate WF can be naturally dried. Alternatively, the substrate cleaning apparatus 200 can also include the second gas supplier 520, and can not include the first gas supplier 510. When the substrate cleaning apparatus 200 performs the drying process, the upper surface of the substrate WF can be naturally dried, and the lower surface of the substrate WF can be dried by the gas supplied from the second gas supplier 520.

[0101] Referring to Figure 20 , the substrate cleaning apparatus 200 can further include a third liquid supplier 530. Figure 20 is a third example view for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the disclosure.

[0102] Like the first liquid supplier 220, the third liquid supplier 530 can supply a liquid to the upper surface of the substrate WF. The first liquid supplier 220 can supply a first liquid, and the third liquid supplier 530 can supply a third liquid. Each of the first liquid supplier 220 and the third liquid supplier 530 can be disposed at a vertical height higher than a vertical height of the substrate WF. The first liquid and the third liquid can be liquids different from each other. For example, the first liquid can be a chemical, and the third liquid can be deionized water. For example, the chemical can be isopropyl alcohol.

[0103] The first liquid supplier 220 and the third liquid supplier 530 can supply a liquid when cleaning the upper surface of the substrate WF. The first liquid supplier 220 and the third liquid supplier 530 can supply a liquid at the same time. However, embodiments of the disclosure are not limited thereto, and only one liquid supplier among the first liquid supplier 220 and the third liquid supplier 530 can supply a liquid.

[0104] According to an embodiment, the substrate cleaning device 200 can further include at least one gas supplier among the first gas supplier 510 and the second gas supplier 520 and the third liquid supplier 530.

[0105] Referring to Figure 21 , the substrate cleaning device 200 can further include a fourth liquid supplier 540. Figure 21 is a fourth example view for illustrating an internal structure of a substrate cleaning device according to some embodiments of the disclosure.

[0106] Like the first liquid supplier 220, the fourth liquid supplier 540 can supply a liquid to the upper surface of the substrate WF. The first liquid supplier 220 and the fourth liquid supplier 540 can supply a liquid of the same type. For example, the first liquid supplier 220 and the fourth liquid supplier 540 can supply deionized water.

[0107] The fourth liquid supplier 540 can supply a liquid at a time different from a time at which the first liquid supplier 220 supplies a liquid. A period in which cleaning of the substrate WF is performed can be divided into a first period and a second period. The first liquid supplier 220 can supply a liquid during the first period which is a first half period, and the fourth liquid supplier 540 can supply a liquid during the second period which is a second half period.

[0108] The fourth liquid supplier 540 can supply a liquid in a discharge scheme different from a scheme in which the first liquid supplier 220 discharges a liquid. Referring to Figure 22 , the first liquid supplier 220 can supply a liquid in an atomization scheme. Referring to Figure 23The fourth liquid supplier 540 can provide liquid in a dripping scheme. In this regard, the dripping scheme refers to a scheme of continuously discharging liquid droplets of a certain size to a narrow range of a destination. The atomizing scheme refers to a scheme of spraying liquid droplets of a fine size (i.e., liquid droplets of a size smaller than that of the liquid droplets in the dripping scheme) to a broad range of a destination. The first liquid supplier 220 can be provided as an aerosol nozzle. Figure 22 is a first exemplary diagram for illustrating a liquid supplier of a substrate cleaning apparatus according to some embodiments of the present disclosure. Figure 23 is a second exemplary diagram for illustrating a liquid supplier of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0109] According to embodiments, the substrate cleaning apparatus 200 can further include at least one gas supplier among the first gas supplier 510 and the second gas supplier 520 in addition to the fourth liquid supplier 540. Alternatively, the substrate cleaning apparatus 200 can further include the third liquid supplier 530 in addition to including the fourth liquid supplier 540. Alternatively, the substrate cleaning apparatus 200 can further include at least one gas supplier among the first gas supplier 510 and the second gas supplier 520, the third liquid supplier 530, and the fourth liquid supplier 540.

[0110] Referring to Figure 24 , the substrate cleaning apparatus 200 can further include a collector 550 and a vertical moving device 560. Figure 24 is a fifth exemplary diagram for illustrating an internal structure of a substrate cleaning apparatus according to some embodiments of the present disclosure.

[0111] The collector 550 can be disposed to surround the substrate support 210 and the substrate WF mounted on the top thereof. The collector 550 can collect liquid used to clean the substrate WF. While the substrate WF is fixed on the substrate support 210, the substrate support 210 is rotated. In this case, the first liquid supplier 220 can discharge liquid onto the substrate WF. The liquid discharged onto the substrate WF can splash toward the collector 550 due to a centrifugal force generated by the rotation of the substrate support 210. The collector 550 can collect the liquid dispersed in all directions through an inlet 551. The collector 550 can be provided as a bowl.

[0112] The vertical movement device 560 can move the collector 550 vertically. The vertical movement device 560 can adjust the vertical height of each of the collector 550 and the inlet 551 so that liquid dispersed in all directions can flow into the inlet 551 of the collector 550. The vertical movement device 560 can appropriately adjust the vertical height of each of the collector 550 and the inlet 551 in consideration of the vertical distance from each of the collector 550 and the inlet 551 to the substrate WF and the angle at which liquid is splashed from the substrate WF. The vertical movement device 560 can move the substrate support 210 vertically without moving the collector 550 vertically. Alternatively, the vertical movement device 560 can move one or more (e.g., some or all) of the collector 550, the inlet 551, and the substrate support 210 vertically.

[0113] According to embodiments of the present disclosure, the vertical movement device 560 can include at least one actuator for moving one or both of the collector 550 and the substrate support 210.

[0114] When the first liquid supplier 220 and the second liquid supplier 230 respectively supply different liquids, the collector 550 can be provided as two collection tubes. Similarly, even when the first liquid supplier 220 and the third liquid supplier 530 respectively supply different liquids, the collector 550 can be provided as two collection tubes.

[0115] Each of the first collection tube and the second collection tube among the two collection tubes can be provided in a ring shape. The first collection tube can be installed to surround the substrate support 210. The other of the two collection tubes (i.e., the second collection tube) can be installed to surround the first collection tube. The collector 550 can be configured so that different collection tubes respectively collect different liquids so that reuse of each liquid can be achieved.

[0116] When cleaning the lower surface of the substrate WF, a chemical reaction caused by a chemical solution and a physical rotational force acting on the substrate WF can be used to remove foreign substances from the lower surface of the substrate WF. However, in this method, the cleaning power on the central portion of the substrate WF and the cleaning power on the edge portion of the substrate WF can be different from each other. Accordingly, in the comparative embodiment, this method has limitations in removing foreign substances strongly adhered to the surface of the substrate WF.

[0117] According to some example embodiments of the present disclosure, the foreign substance remover 240 including the brush 440 can be used so that foreign substances strongly adhered to the lower surface of the substrate WF can be completely removed and the entire area of the substrate WF can be uniformly cleaned.

[0118] According to some example embodiments of the present disclosure, the substrate processing system 100 can also include a controller configured to cause the substrate processing system 100 to perform its functions. For example, the controller can be configured to cause the components of the substrate processing system 100 (e.g., the EFEM 110, the buffer chamber 120, the substrate cleaning device 200, the transfer module, the load lock chamber 140, and / or the processing chamber) to perform their respective functions.

[0119] According to some example embodiments of the present disclosure, the controller can be wholly or partially within one or more (e.g., some or all) of the components (e.g., the EFEM 110, the buffer chamber 120, the substrate cleaning device 200, the transfer module, the load lock chamber 140, and / or the processing chamber).

[0120] According to some example embodiments of the present disclosure, the controller can include at least one processor and a memory storing computer instructions. The computer instructions can be configured to cause the controller to perform its functions when executed by the at least one processor.

[0121] While non-limiting example embodiments of the present disclosure have been described with reference to the drawings, embodiments of the present disclosure are not limited to the example embodiments and can be implemented in various different forms. Embodiments of the present disclosure can be practiced in other specific forms without departing from the spirit and scope of the present disclosure. Therefore, it should be understood that the example embodiments as described above are in all aspects illustrative and not restrictive.

Claims

1. A substrate processing system comprising: a first processing chamber configured to perform plasma processing on a first substrate and a second substrate; a substrate cleaning device configured to clean the first substrate and the second substrate; and a second processing chamber configured to join the first substrate and the second substrate to each other, wherein the substrate cleaning device is further configured to remove foreign matter adhered to the first substrate and the second substrate using a cleaning liquid and a brush, and wherein the second processing chamber is further configured to join the first substrate and the second substrate to each other after the substrate cleaning device cleans the first substrate and the second substrate. the substrate cleaning device comprises:

2. The substrate processing system of claim 1, wherein, a substrate support configured to support the first substrate; a first liquid supplier configured to supply a first liquid to a first surface of the first substrate; a second liquid supplier configured to supply a second liquid to a second surface of the first substrate; and a foreign matter remover configured to remove the foreign matter from the second surface by contacting the second surface. the foreign matter remover is further configured to rotate while in contact with the second surface.

3. The substrate processing system of claim 2, wherein, the foreign matter remover is further configured to rotate around a rotation axis extending in a direction perpendicular or parallel to a width direction of the first substrate.

4. The substrate processing system of claim 3, wherein, the substrate support is further configured to rotate the first substrate.

5. The substrate processing system of claim 3, wherein, a rotation direction of the foreign matter remover is different from a rotation direction of the substrate support.

6. The substrate processing system of claim 5, wherein, the foreign matter remover is further configured to move toward an inside or an outside of the first substrate while in contact with the second surface.

7. The substrate processing system of claim 2, wherein, 8. The substrate processing system according to claim 2, further comprising a controller, the controller is configured to control the foreign matter remover and the second liquid supplier to operate simultaneously. wherein 9. The substrate processing system according to claim 2, further comprising a controller, the controller is configured to control the foreign matter remover to flip based on whether the substrate cleaning device is in cleaning. wherein 10. The substrate processing system according to claim 2, further comprising a controller, the controller is configured to control the foreign matter remover to move vertically based on whether the substrate cleaning device is in cleaning. wherein, a width of the substrate support is smaller than a width of the first substrate.

11. The substrate processing system of claim 2, wherein, the substrate support is further configured to vacuum-adsorb the first substrate.

12. The substrate processing system of claim 11, wherein, the first liquid is a chemical or deionized water, and the second liquid is deionized water.

13. The substrate processing system of claim 2, wherein, the substrate cleaning device further comprises:

14. The substrate processing system of claim 2, wherein, the brush, wherein the brush is configured to contact the second surface; and a drain cup below the brush and configured to hold the second liquid, wherein the brush is configured to contact the second surface while the drain cup retains the second liquid. the substrate cleaning device further comprises:

15. The substrate processing system of claim 2, wherein, a gas supplier configured to supply a gas to the second surface; and a controller; and wherein the controller is configured to: control the foreign matter remover to move vertically based on whether the substrate cleaning device is in cleaning; and ​ The gas supplier is controlled to provide the gas based on whether operation of each of the second liquid supplier and the foreign matter remover is terminated.

16. The substrate processing system of claim 2, wherein, The substrate cleaning apparatus further includes a third liquid supplier configured to supply a third liquid to the first surface, and wherein the first liquid and the third liquid are different from each other.

17. The substrate processing system of claim 2, wherein, The substrate cleaning apparatus further includes a fourth liquid supplier configured to supply a fourth liquid to the first surface, and wherein the first liquid supplier and the fourth liquid supplier have different discharge times and discharge schemes from each other.

18. The substrate processing system of claim 2, wherein, The substrate cleaning apparatus further includes a collector around the substrate support, and wherein the collector is configured to collect the first liquid or the second liquid in a recyclable manner.

19. A substrate cleaning apparatus comprising: a substrate support configured to support a substrate; a first liquid supplier configured to supply a first liquid to a first surface of the substrate; a second liquid supplier configured to supply a second liquid to a second surface of the substrate; and a foreign matter remover configured to remove foreign matter from the second surface by contacting the second surface, wherein the foreign matter remover is further configured to remove the foreign matter using the second liquid and a brush, wherein the foreign matter remover is further configured to rotate while in contact with the second surface, and wherein the foreign matter remover is further configured to flip or move vertically based on whether the substrate cleaning apparatus is in cleaning.

20. A substrate processing system comprising: a first processing chamber configured to perform plasma processing on a first substrate and a second substrate; a substrate cleaning apparatus configured to clean the first substrate and the second substrate and remove foreign matter adhered to the first substrate and the second substrate using a cleaning liquid and a brush; and a second processing chamber configured to join the first substrate and the second substrate to each other, wherein the substrate cleaning apparatus includes: a substrate support configured to support the first substrate; a first liquid supplier configured to supply a first liquid to a first surface of the first substrate; a second liquid supplier configured to supply a second liquid to a second surface of the first substrate; and a foreign matter remover configured to remove foreign matter from the second surface by contacting the second surface, wherein the foreign matter remover is further configured to rotate while in contact with the second surface, wherein the foreign matter remover is further configured to move toward an inside or an outside of the first substrate while in contact with the second surface, wherein the foreign matter remover is further configured to flip or move vertically based on whether the substrate cleaning apparatus is in cleaning, wherein the foreign matter remover and the second liquid supplier are configured to operate simultaneously, and wherein the second processing chamber is further configured to join the first substrate and the second substrate after the substrate cleaning apparatus cleans the first substrate and the second substrate.

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