A flow control cabinet for vapor deposition
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 米拓半导体(上海)股份有限公司
- Filing Date
- 2025-08-21
- Publication Date
- 2026-04-21
AI Technical Summary
In existing vapor deposition technologies, gas flow control suffers from problems such as slow response speed, difficulty in multi-stage coordinated control, difficulty in adjusting small flow rates, and uneven gas distribution.
It adopts a dual-diameter pipe and rotating plug linkage design, combined with spring and connecting rod to dynamically adjust the opening of the solid semi-circular disk, so as to achieve multi-level precise flow control; through the cooperation of the rotating mechanism and the jetting mechanism, it realizes multi-angle dynamic gas injection and improves the uniformity of gas coverage.
It achieves rapid response and stable adjustment of gas flow rate, improves the uniformity and quality of vapor deposition, reduces energy consumption, and simplifies the operation process.
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Figure CN121161270B_ABST
Abstract
Citation Information
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