Laser heat treatment method of substrate structural body and preparation method of electronic device using laser heat treatment method

Abstract

Disclosed are a laser heat treatment method for a substrate structure and a method for manufacturing an electronic device using the same. The disclosed laser heat treatment method for a substrate structure performs heat treatment on the substrate structure by irradiating a laser beam to one surface of the substrate structure that can be divided into a plurality of unit regions, the laser heat treatment method may comprise the steps of: performing an nth laser heat treatment on the substrate structure; and performing an (n + 1) th laser heat treatment on the substrate structure, the nth laser heat treatment being performed on a first region including one or more of the unit regions in the substrate structure, the (n + 1) th laser heat treatment may be performed on a second region including one or more of the unit regions in the substrate structure, the step of performing the nth laser heat treatment may include changing a relative position between the substrate structure and the laser beam and irradiating the laser beam to the first region in a scanning manner, the step of performing the (n + 1) th laser heat treatment may include changing a relative position between the substrate structure and the laser beam and irradiating the laser beam to the second region in a scanning manner.

Description

TECHNICAL FIELD

[0001] The present application relates to a heat treatment method of a processed object and a device manufacturing method using the same, and more particularly, to a laser heat treatment method of a substrate structure and a device manufacturing method using the same. BACKGROUND

[0002] Generally, a semiconductor / electronic device can be manufactured through a plurality of processes. For example, a process for manufacturing a semiconductor / electronic device can include a thin film evaporation process, a photolithography process, an etching process, an ion implantation process, a heat treatment (i.e., annealing) process, etc. Among them, the heat treatment process refers to a process for improving and securing device characteristics by stabilizing, activating, melting, or removing a seam defect in a thin film formed on a substrate, etc. The heat treatment (annealing) process can include a laser heat treatment process, a rapid thermal process (RTP), etc.

[0003] The laser heat treatment process can perform heat treatment mainly on a surface portion of a substrate or a region adjacent thereto using a laser, and thus, has advantages of less influence on other processes, reduction of thermal damage, relatively easy temperature increase and control. However, as the integration of a semiconductor / electronic device is increased, the size of a unit device is continuously reduced, and the processes become complicated, when the laser heat treatment is performed, temperature non-uniformity from a substrate portion can cause various problems in device manufacturing characteristics.

[0004] Also, in the existing laser heat treatment process, in order to irradiate a laser to a prescribed shot region in a stepper manner, it is necessary to secure uniform laser energy in a relatively wide range according to the size of the shot region, and for this, it is necessary to apply a complicated optical system. As the complicated optical system is applied, not only the equipment cost is increased, but also, it can be disadvantageous in terms of maintenance and management of the equipment.

[0005] Therefore, there is a need for a laser heat treatment method capable of easily controlling temperature distribution to improve heat treatment characteristics while reducing equipment cost and maintenance and management burden by simplifying an applied optical system. SUMMARY

[0006] TECHNICAL PROBLEM

[0007] The technical object to be achieved by the present application is to provide a laser heat treatment method capable of easily controlling temperature distribution to improve heat treatment characteristics when heat treatment is performed using a laser.

[0008] Furthermore, the present application aims to provide a laser heat treatment method that can simplify an optical system used when performing heat treatment using a laser, thereby reducing equipment costs and reducing maintenance and management burdens.

[0009] Furthermore, the present application aims to provide an electronic device (semiconductor device) production method that applies the laser heat treatment method.

[0010] The present application aims to provide an electronic device (semiconductor device) production method that applies the laser heat treatment method.

[0011] Technical Solution

[0012] A laser heat treatment method for a substrate structure according to an embodiment of the present application performs heat treatment on a substrate structure that can be divided into a plurality of unit regions by irradiating a laser beam on one surface of the substrate structure, and can include the steps of performing an nth laser heat treatment on the substrate structure, and performing an (n+1)th laser heat treatment on the substrate structure. The nth laser heat treatment can be performed on a first region of the substrate structure that includes one or more unit regions, and the (n+1)th laser heat treatment can be performed on a second region of the substrate structure that includes one or more unit regions. The step of performing the nth laser heat treatment can include the steps of changing the relative position between the substrate structure and the laser beam and irradiating the laser beam on the first region in a scanning manner, and the step of performing the (n+1)th laser heat treatment can include the steps of changing the relative position between the substrate structure and the laser beam and irradiating the laser beam on the second region in a scanning manner.

[0013] The nth laser heat treatment and the (n+1)th laser heat treatment can be performed by a raster scan method in which a stage on which the substrate structure is disposed is moved.

[0014] The width of the laser beam in the scanning direction of the first region and the second region can be smaller than the width of the substrate structure in the scanning direction.

[0015] The first region and the second region can be spaced apart from each other.

[0016] The plurality of unit regions can be arranged in a plurality of rows along a first direction and a plurality of columns along a second direction perpendicular to the first direction, and the first region and the second region can be spaced apart from each other along one of the first direction, the second direction, and a third direction between the first direction and the second direction.

[0017] The interval between the first region and the second region can be greater than or equal to about 90% of the width of the unit region in one of the first direction and the second direction.

[0018] The first region and the second region can be in contact with each other.

[0019] The first region and the second region can have different sizes.

[0020] The first region and the second region can have the same size.

[0021] The laser heat treatment method can include a step of performing an n+mth laser heat treatment on the substrate structure (where m is an integer greater than 2), the n+mth laser heat treatment can be performed on a third region of the substrate structure, the third region can be located on one side of one of the first region and the second region or between the first region and the second region.

[0022] The laser heat treatment method can be performed on the entire effective region of the one surface of the substrate structure.

[0023] The laser beam can have a width in the range of 1 μm to 500 μm.

[0024] The laser beam can include one of an ultraviolet ray, a visible ray, an infrared ray, and a microwave.

[0025] The substrate structure can include a semiconductor film or an insulator film, and the heat treatment using the laser can change the crystallinity, physical properties, or film quality of the semiconductor film or the insulator film.

[0026] The substrate structure can include a wafer.

[0027] Before performing the heat treatment using the laser beam, the initial temperature of the substrate structure can be less than or equal to about 550°C, and the heating temperature of the corresponding region of the substrate structure irradiated by the laser beam can be in the range of about 200°C to 3,000°C.

[0028] Still another embodiment of the present application provides an electronic device manufacturing method including a step of performing a heat treatment on a substrate structure using the laser heat treatment method, and a step of forming an electronic device using the heat-treated substrate structure.

[0029] Effects of the Invention

[0030] According to embodiments of the present invention, when a laser is used to perform heat treatment, the temperature distribution can be easily controlled to improve the heat treatment characteristics. Furthermore, according to embodiments of the present invention, when a laser is used to perform heat treatment, the applied optical system can be simplified, thereby reducing equipment costs and maintenance burdens.

[0031] If the laser heat treatment method of the present invention is applied, electronic devices (semiconductor devices) with excellent performance and uniformity can be prepared.

[0032] However, the effects of the present invention are not limited to those described, and various extensions can be made without departing from the technical concept of the present invention. Attached Figure Description

[0033] Figure 1 This is a top view illustrating a laser heat treatment method for a substrate structure according to an embodiment of the present invention.

[0034] Figure 2 For the purpose of illustrating an embodiment of the present invention Figure 1 A top view of the laser heat treatment method for the first region of the substrate structure.

[0035] Figure 3 For the purpose of illustrating an embodiment of the present invention Figure 1 A top view of the laser heat treatment method for the second region of the substrate structure.

[0036] Figure 4 For the purpose of illustrating another embodiment of the invention Figure 1 A top view of the laser heat treatment method for the second region of the substrate structure.

[0037] Figures 5a to 5c This is a top view illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0038] Figures 6a to 6c This is a top view illustrating a laser heat treatment method for a substrate structure according to another embodiment of the present invention.

[0039] Figures 7a to 7c This is a top view illustrating the laser heat treatment method for the substrate structure of the first comparative example.

[0040] Figure 8 This is a top view illustrating the laser heat treatment method for the substrate structure of the second comparative example.

[0041] Figure 9 This is a perspective view of an electronic device fabrication method for illustrating a laser heat treatment method for an application substrate structure according to an embodiment of the present invention. Detailed Implementation

[0042] Hereinafter, an embodiment of the present application will be described in detail with reference to the accompanying drawings.

[0043] The following embodiment of the present application is described only for explanation, so that those skilled in the art can further understand the present application, and the scope of the present application is not limited to the following embodiment, and the following embodiment can be modified into various different embodiments.

[0044] In the present specification, the terms used are only for explaining specific embodiments, and are not intended to limit the present application. In the present specification, the singular form of the terms used includes the plural form unless the context clearly indicates otherwise. Also, in the present specification, the terms "comprise" and / or "comprising" and the like are used to specify the presence of the mentioned shape, step, number, work, component, structural element, and / or combination thereof, and do not exclude the presence or additional possibility of one or more other shapes, steps, numbers, works, components, structural elements, and / or combinations thereof. Also, in the present specification, the term "connected" is used not only to mean the direct connection of a component, but also to include the concept that other components are indirectly connected between the components.

[0045] Also, in the present specification, when it is indicated that a component is "on" another component, it means not only the case where the component is in contact with the other component, but also the case where there is another component between the two components. In the present specification, the term "and / or" includes all combinations of one and one or more of the corresponding listed items. Also, in the present specification, the terms "about", "substantially", and the like indicating a degree are used as the meaning of a numerical value or a degree range or close thereto considering the inherent manufacturing and material allowable errors, and the precise numerical value or absolute value provided to help understanding of the present application is used to prevent the infringer from illegally using the mentioned disclosure.

[0046] Hereinafter, an embodiment of the present application will be described in detail with reference to the accompanying drawings. In order to ensure the clarity of the specification and the convenience of the explanation, the size or thickness of the regions or components shown in the drawings can be exaggerated. In the entire content of the present specification, the same reference numerals denote the same structural elements.

[0047] Figure 1 A plan view for explaining a laser heat treatment method of a substrate structure of an embodiment of the present application.

[0048] Referring to Figure 1The laser heat treatment method for the substrate structure in this embodiment of the invention refers to a laser heat treatment method (i.e., laser annealing method) that performs heat treatment (i.e., annealing) on ​​the substrate structure S10 by irradiating a laser beam onto one side of the substrate structure S10, which can be divided into multiple unit regions. The substrate structure S10 includes a semiconductor substrate or an insulating substrate, or, depending on the situation, a conductive substrate. Furthermore, the substrate structure S10 may also include a predetermined thin film formed on the substrate (bottom substrate) or a device portion including the thin film. As a non-limiting example, the semiconductor substrate may include at least one of a variety of semiconductor materials composed of silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), etc. The thin film may include at least one of a semiconductor thin film, an insulating thin film, and a conductive thin film. The semiconductor thin film may include amorphous silicon, polycrystalline silicon, etc. The insulating thin film may include silicon oxide, silicon nitride, silicon nitride, a high-k material with a dielectric constant greater than that of silicon nitride, etc. For example, the conductive thin film may contain at least one of a metal or a metal compound. As a non-limiting example, the device portion may include switching components such as transistors or diodes, or storage nodes, or storage components such as capacitors or resistance-changing layers. Furthermore, the substrate structure S10 may include a wafer or have a wafer shape.

[0049] When the substrate structure S10 includes a semiconductor film (semiconductor thin film) or an insulating film (insulator thin film), the heat treatment using the laser can alter the crystallinity, physical properties, or film quality of the semiconductor film or insulating film. As a non-limiting example, the heat treatment using the laser can be used to perform crystallization of amorphous silicon or remove defects such as seams within the thin film, or it can be used to activate doped regions or stabilize the substrate and the thin film. Furthermore, the heat treatment using the laser can be used for a variety of other purposes.

[0050] like Figure 1 As shown, multiple regions on one side of the substrate structure S10, divided by a dashed grid, can correspond to the multiple unit regions. Figure 1 In the diagram, a grid region (quadrilateral region) formed by dashed lines can correspond to the unit region. The unit region can correspond to a shot region where a laser is simultaneously irradiated in a single pass using a laser heat treatment method based on existing stepper techniques. However, embodiments of the invention may not irradiate the unit region with a laser in a shot manner. For example, the unit region may have a quadrilateral shape or be substantially quadrilateral. By irradiating the plurality of unit regions on one side of the substrate structure S10 using a scanning method according to embodiments of the invention, heat treatment (i.e., annealing) can be performed on the entire effective area of ​​that side surface.

[0051] The laser heat treatment method can include the steps of performing an n-th laser heat treatment on the substrate structure S10, and performing an n+1-th laser heat treatment on the substrate structure S10. The n-th laser heat treatment can be performed on a first region 10 including one or more of the unit regions in the substrate structure S10, and the n+1-th laser heat treatment can be performed on a second region 20 including one or more of the unit regions in the substrate structure S10. Here, n is an integer of 1 or more. The first region 10 and the second region 20 can each be a square or a rectangle or a shape similar to a quadrangle.

[0052] According to an embodiment, the first region 10 and the second region 20 can be spaced apart from each other. The plurality of unit regions can be arranged in a plurality of rows along a first direction (e.g., the X-axis direction in the drawing) and in a plurality of columns along a second direction (e.g., the Y-axis direction in the drawing) perpendicular to the first direction. In this case, the first region 10 and the second region 20 can be spaced apart from each other along one of the first direction (X-axis direction), the second direction (Y-axis direction), and a third direction between the first direction and the second direction. The interval d1 between the first region 10 and the second region 20 can be a distance equivalent to 90% or more of the width of the unit region in one of the first direction (X-axis direction) and the second direction (Y-axis direction). The interval d1 between the first region 10 and the second region 20 can be 90% or more of the width of the unit region in one of the first direction (X-axis direction) and the second direction (Y-axis direction), and can be, as a non-limiting example, 2000% or less. However, depending on the situation, it can also be 2000% or more. Here, the "interval" refers to the minimum interval (minimum distance). The same applies to other parts of the present specification. In the laser heat treatment method of an embodiment of the present application, a space (region) interval can be left to perform the n-th laser heat treatment and the n+1-th laser heat treatment.

[0053] In Figure 1 In an embodiment of the present application, the first region 10 and the second region 20 are spaced apart from each other along the first direction (X-axis direction), and the interval d1 between the first region 10 and the second region 20 is 90% or more of the width of the unit region in the first direction (X-axis direction). For example, the width of the unit region in the first direction (X-axis direction) can be several millimeters (mm) to several tens of millimeters (mm) or so, and the width in the second direction (Y-axis direction) can be several millimeters (mm) to several tens of millimeters (mm) or so.

[0054] When the first region 10 and the second region 20 are spaced apart from each other in one of the first direction (X-axis direction) and the second direction (Y-axis direction), the interval dl between the first region 10 and the second region 20 can correspond to an N-fold distance of the width of the unit region in one of the first direction (X-axis direction) and the second direction (Y-axis direction), where N can be an integer of 1 or more. In Figure 1 In the embodiment, the first region 10 and the second region 20 are spaced apart from each other in the first direction (X-axis direction), and the interval dl between the first region 10 and the second region 20 corresponds to a 1-fold distance of the width of the unit region in the first direction (X-axis direction). However, the interval can be 2-fold (2-pixel distance) or more in addition to the 1-fold (1-pixel distance).

[0055] As described above, when a space (region) interval is left to perform the nth laser heat treatment and the n+1th laser heat treatment, in each laser heat treatment step, the effect of suppressing temperature unevenness of the substrate structure S10 can be improved.

[0056] In the embodiment, the step of performing the nth laser heat treatment can include a step of changing the relative position between the substrate structure S10 and the laser beam and irradiating the laser beam to the first region 10 in a scanning manner. Also, the step of performing the n+1th laser heat treatment can include a step of changing the relative position between the substrate structure S10 and the laser beam and irradiating the laser beam to the second region 20 in a scanning manner. The nth laser heat treatment and the n+1th laser heat treatment can be performed respectively by a raster scan method of moving a stage on which the substrate structure S10 is disposed. In the raster scan method, work of moving the stage and scanning the laser beam in one direction can be performed. In this regard, later, reference will be made to Figures 2 to 4 for further details.

[0057] According to an embodiment, the first region 10 and the second region 20 can each have a width in the scanning direction of the laser beam that is less than a width of the substrate structure S10 in the scanning direction. As a non-limiting example, the scanning direction of the laser beam can be parallel to the X-axis direction. In this case, the first region 10 and the second region 20 can each have a width in the X-axis direction that is less than a width of the substrate structure S10 in the X-axis direction. As a non-limiting example, the first region 10 and the second region 20 can each have a width in the X-axis direction that is less than about 2 / 3 or about 1 / 2 or about 1 / 3 of a width of the substrate structure S10 in the X-axis direction.

[0058] According to an embodiment, the first region 10 and the second region 20 can have different sizes. In this case, the width of the first region 10 in the X-axis direction can be different from the width of the second region 20 in the X-axis direction, and / or the width of the first region 10 in the Y-axis direction can be different from the width of the second region 20 in the Y-axis direction. The laser annealing can be easily performed on the plurality of regions 10, 20 having different sizes. However, according to circumstances, the first region 10 and the second region 20 can also have the same size.

[0059] Further, the laser heat treatment method can further include a step of performing an (n+2)th laser heat treatment on the substrate structure S10. The (n+2)th laser heat treatment can be performed on a third region 30 including one or more of the unit regions in the substrate structure S10. The third region 30 can be located on one side of one of the first region 10 and the second region 20. In the present embodiment, the third region 30 is located on one side of the second region 20, and the second region 20 is disposed between the first region 10 and the third region 30. Further, the third region 30 can be spaced apart from at least one of the first region 10 and the second region 20. In the present embodiment, the third region 30 can be located spaced apart from the second region 20 along one side thereof, in which case the spacing between the third region 30 and the second region 20 can be a distance equivalent to about 90% or more of the width of the unit region in one of the first direction (X-axis direction) and the second direction (Y-axis direction).

[0060] In Figure 1 the third region 30 and the second region 20 are spaced apart from each other along the first direction (X-axis direction), and the spacing between the third region 30 and the second region 20 is a distance equivalent to about 90% or more of the width of the unit region in the first direction (X-axis direction). When the third region 30 and the second region 20 are spaced apart from each other along one of the first direction (X-axis direction) and the second direction (Y-axis direction), the spacing between the third region 30 and the second region 20 can be a distance equivalent to N times the width of the unit region in one of the first direction (X-axis direction) and the second direction (Y-axis direction), where the N can be an integer of 1 or more.

[0061] In this embodiment of the invention, the step of performing the (n+2)th laser heat treatment may include the following steps: changing the relative position between the substrate structure S10 and the laser beam to irradiate the third region 30 with the laser beam in a scanning manner. The (n+2)th laser heat treatment can be performed by raster scanning of the platform (stage) on which the substrate structure S10 is disposed. According to one embodiment, the width of the third region 30 in the scanning direction of the laser beam may be less than the width of the substrate structure S10 in the scanning direction. As a non-limiting example, the scanning direction of the laser beam may be parallel to the X-axis direction. In this case, the width of the third region 30 in the X-axis direction may be less than the width of the substrate structure S10 in the X-axis direction. As a non-limiting example, the width of the third region 30 in the X-axis direction may be less than approximately 2 / 3, approximately 1 / 2, or approximately 1 / 3 of the width of the substrate structure S10 in the X-axis direction.

[0062] According to one embodiment, the size of the third region may be different from at least one of the first region 10 and the second region 20. However, depending on the circumstances, the size of the third region may also be the same as at least one of the first region 10 and the second region 20.

[0063] Figure 2 For the purpose of illustrating an embodiment of the present invention Figure 1 A top view of the laser heat treatment method for the first region 10 of the substrate structure S10.

[0064] Reference Figure 2 The step of performing the nth laser heat treatment may include the following steps: changing the substrate structure ( Figure 1 The relative position between the substrate structure (S10) and the laser beam is determined, and the laser beam is irradiated onto the first region 10 in a scanning manner. The nth laser heat treatment can be performed by moving the substrate structure (S10) on which the substrate structure is located. Figure 1 The process is performed using a raster scan mode on the platform (stage) in S10. In this raster scan mode, the platform can be moved and the laser beam scanned along one direction. The blue arrows indicate the scanning direction of the laser beam. For example, the scanning direction of the laser beam can be parallel to the X-axis. Similarly, the movement direction of the platform can be parallel to the Y-axis.

[0065] Figure 3 For the purpose of illustrating an embodiment of the present invention Figure 1 A top view of the laser heat treatment method for the second region 20 of the substrate structure S10.

[0066] Reference Figure 3The step of performing the (n+1)th laser heat treatment may include the following steps: changing the substrate structure ( Figure 1 The relative position between the substrate structure (S10) and the laser beam is determined, and the laser beam is irradiated onto the second region 20 in a scanning manner. The (n+1)th laser heat treatment can be performed by moving the substrate structure (S10) on which the substrate structure is located. Figure 1 The process is performed in a raster scan mode on the platform (stage) of S10. In this raster scan mode, the platform can be moved and the laser beam scanned in one direction.

[0067] According to one example, Figure 3 The platform's movement direction can be Figure 2 The platform moves in the opposite direction (i.e., the reverse direction). Since the platform's movement direction in the nth laser heat treatment is opposite to that in the (n+1)th laser heat treatment, the process can be performed more efficiently. However, this is only an example; the platform's movement direction in the nth laser heat treatment can also be the same as that in the (n+1)th laser heat treatment. This example is as follows... Figure 4 As shown.

[0068] Figure 4 For the purpose of illustrating another embodiment of the invention Figure 1 A top view of the laser heat treatment method for the second region 20 of the substrate structure S10.

[0069] Reference Figure 4 The step of performing the (n+1)th laser heat treatment may include the following steps: changing the substrate structure ( Figure 1 The relative position between S10 and the laser beam is determined, and the laser beam is irradiated onto the second region 20 in a scanning manner. In this case, the moving direction of the platform in the (n+1)th laser heat treatment can be... Figure 2 The platforms in the nth laser heat treatment shown in the diagram move in the same direction.

[0070] Although not illustrated, it is aimed at Figure 1 The third region 30 can also be applied and referenced. Figures 2 to 4 The laser heat treatment method used in the specified area is the same or similar.

[0071] For example, in the embodiment of the present application described above, the laser beam used can have a width (beam width) in the range of about 1 μm to 500 μm. For example, the laser beam can be one of ultraviolet rays (e.g., EUV, DUV, UV), visible rays, infrared rays (IR), and microwaves. For example, the wavelength of the laser beam can be about 0.01 μm to 11 μm or so. However, the specific type and wavelength range of the laser beam are merely examples and can vary depending on the situation. Also, for example, in the embodiment of the present application, the initial temperature of the substrate structure S10 before performing heat treatment using the laser beam can be about 550°C or less, and for example, the heating temperature of the corresponding region (laser irradiation region) of the substrate structure S10 irradiated with the laser beam can be in the range of about 200°C to 3000°C. However, the temperature conditions are merely examples and can vary depending on the situation.

[0072] According to the embodiment of the present application, when performing heat treatment using a laser beam, a laser heat treatment method that improves heat treatment characteristics by easily controlling the temperature distribution can be realized. Also, according to the embodiment of the present application, when performing heat treatment using a laser beam, a laser heat treatment method and related technology that reduces equipment costs and reduces the burden of maintenance and management by simplifying the optical system applied can be realized.

[0073] As the integration of semiconductor devices / electronic devices increases, the size of the unit device continues to decrease, and the process becomes complex, when performing laser heat treatment, temperature non-uniformity originating from the substrate portion can cause various problems in device manufacturing characteristics. Also, in the existing laser heat treatment process, in order to irradiate a laser beam to a prescribed shot region in a stepper manner, it is necessary to secure uniform laser energy in a relatively wide range according to the size of the shot region, and for this reason, it is necessary to apply a complex optical system. As a complex optical system is applied, not only does the equipment cost increase, but also, it can be disadvantageous in terms of maintenance and management of the equipment.

[0074] However, according to the embodiment of the present application, heat treatment can be performed on selected regions in a scanning manner using a laser beam having a small width (beam width) of about 1 μm to 500 μm or so. Since the laser beam has excellent uniformity, if the method of the embodiment of the present application is used, the temperature distribution originating from the substrate portion can be easily and accurately controlled. Also, in the embodiment of the present application, since a scanning method using a laser beam is used, compared to the existing stepper method, the optical system can be greatly simplified, and thus, not only can the equipment cost be reduced, but also, it can be considerably advantageous in terms of maintenance and management of the equipment.

[0075] Figures 5a to 5cA plan view of a laser heat treatment method for a substrate structure for explaining another embodiment of the present application.

[0076] Referring to Figure 5a , the laser heat treatment method of the present embodiment can include a step of performing an n-th laser heat treatment on the substrate structure S10. The n-th laser heat treatment can be performed on the first region 11 including one or more of the unit regions in the substrate structure S10. The step of performing the n-th laser heat treatment can include a step of changing the relative positions between the substrate structure S10 and the laser beam and irradiating the laser beam to the first region 11 in a scanning manner. The n-th laser heat treatment can be performed by a raster scan manner of moving a stage on which the substrate structure S10 is provided.

[0077] Referring to Figure 5b , the laser heat treatment method can include a step of performing an n+1-th laser heat treatment on the substrate structure S10. The n+1-th laser heat treatment can be performed on the second region 21 including one or more of the unit regions in the substrate structure S10. The step of performing the n+1-th laser heat treatment can include a step of changing the relative positions between the substrate structure S10 and the laser beam and irradiating the laser beam to the second region 21 in a scanning manner. The n+1-th laser heat treatment can be performed by a raster scan manner of moving a stage on which the substrate structure S10 is provided.

[0078] According to an embodiment, the first region 11 and the second region 21 can be spaced apart from each other. In other words, a space (region) interval can be left to perform the n-th laser heat treatment and the n+1-th laser heat treatment. As described above, when a space (region) interval is left to perform the n-th laser heat treatment and the n+1-th laser heat treatment, it is possible to improve the effect of suppressing temperature unevenness of the substrate structure S10 in each laser heat treatment step.

[0079] Referring to Figure 5c , the laser heat treatment method can include a step of performing an n+m-th laser heat treatment on the substrate structure S10. Here, the m can be an integer greater than 2. The n+m-th laser heat treatment can be performed on the third region 31 including one or more of the unit regions in the substrate structure S10. The step of performing the n+m-th laser heat treatment can include a step of changing the relative positions between the substrate structure S10 and the laser beam and irradiating the laser beam to the third region 31 in a scanning manner. The n+m-th laser heat treatment can be performed by a raster scan manner of moving a stage on which the substrate structure S10 is provided.

[0080] The third region 31 can be located between the first region 11 and the second region 21. After the laser heat treatment is performed for the two regions 11, 21 separated from each other and a prescribed time elapses, the laser heat treatment can be performed for the third region 31 between the first region 11 and the second region 21. The third region 31 can be located adjacent to at least one of the first region 11 and the second region 21. Since the laser heat treatment is performed for the first region 11 and the second region 21 and the laser heat treatment for the third region 31 is performed after a prescribed time elapses, the temperature change of the substrate structure S10 generated when the laser heat treatment is performed for the first region 11 and the second region 21 can not affect the laser heat treatment for the third region 31.

[0081] In the embodiment described with reference to Figures 5a to 5c Although the first region 11 in which the nth laser heat treatment is performed and the second region 21 in which the (n+1)th laser heat treatment is performed are separated from each other, the first region 11 in which the nth laser heat treatment is performed and the second region 21 in which the (n+1)th laser heat treatment is performed can be in contact with each other depending on the case. The "in contact with each other" means not only the joining through the one-dimensional joining portion or the two-dimensional joining portion but also can include the case where a prescribed portion is overlapped. Hereinafter, the case where the first region 11 and the second region 21 are in contact with each other will be described in detail. Figures 6a to 6c

[0082] Figures 6a to 6c A plan view of a laser heat treatment method for a substrate structure for describing another embodiment of the present application.

[0083] With reference to Figure 6a , the laser heat treatment method of the present embodiment can include a step of performing the nth laser heat treatment for the substrate structure S10. The nth laser heat treatment can be performed for the first region 12 including one or more of the unit regions in the substrate structure S10. The step of performing the nth laser heat treatment can include a step of changing the relative position between the substrate structure S10 and the laser beam and irradiating the first region 12 with the laser beam in a scanning manner. The nth laser heat treatment can be performed by a raster scan method in which a stage on which the substrate structure S10 is placed is moved.

[0084] With reference to Figure 6b ​The laser heat treatment method can include a step of performing an (n+1)th laser heat treatment on the substrate structure S10. The (n+1)th laser heat treatment can be performed on a second region 22 including one or more of the unit regions in the substrate structure S10. The step of performing the (n+1)th laser heat treatment can include a step of changing the relative position between the substrate structure S10 and the laser beam and irradiating the laser beam to the second region 22 in a scanning manner. The (n+1)th laser heat treatment can be performed by a raster scan method of moving a stage on which the substrate structure S10 is provided.

[0085] According to the present embodiment, the first region 12 and the second region 22 can be in contact with each other. Even if the first region 12 and the second region 22 are in contact with each other, after the laser heat treatment is performed by changing the relative position between the substrate structure S10 and the laser beam and irradiating the laser beam to the first region 12 in a scanning manner, the laser heat treatment can be performed again by changing the relative position between the substrate structure S10 and the laser beam and irradiating the laser beam to the second region 22 in a scanning manner, whereby an effect of suppressing temperature unevenness of the substrate structure S10 can be obtained.

[0086] Referring to Figure 6c The laser heat treatment method can include a step of performing an (n+m)th laser heat treatment on the substrate structure S10. The m can be an integer greater than 2. The (n+m)th laser heat treatment can be performed on a third region 32 including one or more of the unit regions in the substrate structure S10. The step of performing the (n+m)th laser heat treatment can include a step of changing the relative position between the substrate structure S10 and the laser beam and irradiating the laser beam to the third region 32 in a scanning manner. The (n+m)th laser heat treatment can be performed by a raster scan method of moving a stage on which the substrate structure S10 is provided.

[0087] The third region 32 can be provided adjacent to at least one of the first region 12 and the second region 22. For example, the third region 32 can be in contact with the second region 22. In this case, the second region 22 can be located between the first region 12 and the third region 32. Even if the second region 22 and the third region 32 are in contact with each other, after the laser heat treatment is performed by changing the relative position between the substrate structure S10 and the laser beam and irradiating the laser beam to the second region 22 in a scanning manner, the laser heat treatment can be performed again by changing the relative position between the substrate structure S10 and the laser beam and irradiating the laser beam to the third region 32 in a scanning manner, whereby an effect of suppressing temperature unevenness of the substrate structure S10 can be obtained.

[0088] Figures 7a to 7cA plan view for explaining a laser heat treatment method of a substrate structure of a first comparative example.

[0089] Referring to Figures 7a to 7c In the laser heat treatment method of the first comparative example, after performing the first laser heat treatment (i.e., laser shot) for one region (first unit region) of the substrate structure S1, the laser heat treatment (i.e., laser shot) can be performed for a second unit region adjacent to the first unit region. As moving toward a next region (unit region) adjacent to a previous laser heat treatment region, the laser heat treatment can be performed for the entire region of the substrate structure S1 by a shot method. In the drawing, the laser heat treatment can be performed by repeatedly moving and aligning from the lower left edge of the substrate structure S1. As described above, in the case where the nth laser heat treatment region and the (n+1)th laser heat treatment region are adjacent to each other, when the heat treatment of the nth laser heat treatment region is performed, the peak temperature in the nth laser heat treatment region and the peak temperature in the (n+1)th laser heat treatment region can be different from each other due to a change in the substrate temperature condition of the adjacent region. Also, a temperature deviation can occur in the (n+1)th laser heat treatment region. As a result, such a temperature non-uniformity can cause a non-uniformity and a reduction in the characteristics of the device.

[0090] Figure 8 A plan view for explaining a laser heat treatment method of a substrate structure of a second comparative example.

[0091] Referring to Figure 8 In the laser heat treatment method of the second comparative example, after performing the first laser scanning for one line region (first line region) of the substrate structure S1, the laser scanning can be performed for a second line region adjacent to the first line region. As moving toward a next region adjacent to a previous laser scanning region, the laser heat treatment can be performed for the entire region of the substrate structure S1 by a scanning method. In the drawing, the laser scanning can be performed by repeatedly moving and aligning from the upper region of the substrate structure S1. The red arrow indicates the scanning direction of the laser heat treatment execution region, and the number written on the left side of the arrow indicates the laser scanning order.

[0092] As with the second comparative example, when performing laser annealing for the entire substrate structure S1 by a process of one continuity, there is a possibility of causing unintended overheating of the lower side of the substrate structure S1, or there is a possibility of increasing the possibility of the temperature of the upper side (i.e., the upper surface on which the laser beam is irradiated) of the substrate structure S1 becoming unintendedly non-uniform. In particular, when the lower side of the substrate structure S1 is overheated, the device portion such as a transistor or a diode, which is formed in advance on the lower side, can be damaged or have reduced performance due to the heat. As a result, there is a possibility of causing problems such as a reduction in characteristics of a device finally manufactured using the substrate structure S1, an increase in defect rate, and the like.

[0093] The electronic device (semiconductor device) manufacturing method of the embodiment of the present application can include the steps of performing heat treatment on a substrate structure using the laser heat treatment method of the embodiment, and forming an electronic device (semiconductor device) using the heat-treated substrate structure. For example, the step of forming an electronic device (semiconductor device) using the heat-treated substrate structure can include the steps of performing a finishing process on the substrate structure, dicing the substrate structure to form a plurality of device portions, and packaging the plurality of device portions. The finishing process, the dicing process, the packaging process, and the like are known technologies, and thus, detailed descriptions thereof will be omitted below.

[0094] Figure 9 A perspective view for explaining an electronic device manufacturing method using the laser heat treatment method of the substrate structure according to the embodiment of the present application.

[0095] Reference Signs List Figure 9 A plurality of devices D10 can be formed using the heat-treated substrate structure S100. The plurality of devices D10 can be electronic devices (semiconductor devices). The devices D10 can also be memory devices or non-memory devices.

[0096] According to the embodiment of the present application as described above, when performing heat treatment using a laser, the laser heat treatment method according to the present application can improve heat treatment characteristics by easily controlling the temperature distribution. Also, according to the embodiment of the present application, when performing heat treatment using a laser, the laser heat treatment method according to the present application can reduce equipment costs and reduce the burden of maintenance and management by simplifying the optical system applied. If the laser heat treatment method according to the embodiment of the present application is applied, electronic devices (semiconductor devices) having excellent performance and uniformity can be manufactured.

[0097] The present specification discloses preferred embodiments of the present application, although specific terms are used, this is only used as the general meaning, in order to easily explain the technical content of the present application and help to understand the present application, and is not used to limit the scope of the present application. In addition to the embodiments disclosed herein, other modifications can be implemented by those skilled in the art based on the technical idea of the present application. It should be understood that those skilled in the art can make various substitutions, changes and modifications to the substrate structure and the laser heat treatment method of the substrate structure and the electronic device manufacturing method using the same described herein without departing from the scope of the technical idea of the present application. Therefore, the scope of the present application is not limited to the embodiments described herein, but should be defined based on the technical idea recorded in the scope of the invention. Figures 1 to 6c and Figure 9 The substrate structure and the laser heat treatment method of the substrate structure and the electronic device manufacturing method using the same described herein can be variously substituted, changed and modified. Therefore, the scope of the present application is not limited to the embodiments described herein, but should be defined based on the technical idea recorded in the scope of the invention.

[0098] Industrial applicability

[0099] The embodiments of the present application can be applied to a heat treatment method of a processed object and a device manufacturing method using the same. The embodiments of the present application can be applied to a laser heat treatment method of a substrate structure and an electronic device manufacturing method using the same.

Claims

1. A method of laser heat treatment of a substrate structure, the heat treatment of the substrate structure being performed by irradiating a laser beam to one surface of the substrate structure which can be divided into a plurality of unit regions, characterized by comprising the steps of: performing n-th laser heat treatment of the substrate structure; and performing (n+1)th laser heat treatment of the substrate structure, the n-th laser heat treatment being performed with respect to a first region including one or more of the unit regions in the substrate structure, the (n+1)th laser heat treatment being performed with respect to a second region including one or more of the unit regions in the substrate structure, the step of performing the n-th laser heat treatment including the steps of changing a relative position between the substrate structure and the laser beam and irradiating the laser beam to the first region in a scanning manner, the step of performing the (n+1)th laser heat treatment including the steps of changing a relative position between the substrate structure and the laser beam and irradiating the laser beam to the second region in a scanning manner, the n-th laser heat treatment and the (n+1)th laser heat treatment being performed by a raster scanning method in which a stage on which the substrate structure is placed is moved, respectively, a width of the laser beam in a scanning direction of the first region and the second region is smaller than a width of the substrate structure in the scanning direction, respectively, the first region and the second region are separated from each other, the plurality of unit regions are arranged in a plurality of rows along a first direction and in a plurality of columns along a second direction perpendicular to the first direction, the first region and the second region are separated from each other along one of the first direction, the second direction, and a third direction between the first direction and the second direction, a separation between the first region and the second region is 90% or more of a width of the unit region in one of the first direction and the second direction, the first region and the second region are in contact with each other, the first region and the second region have different sizes, the first region and the second region have the same size, the method of laser heat treatment includes the step of performing (n+m)th laser heat treatment of the substrate structure, where m is an integer greater than 2, the (n+m)th laser heat treatment is performed with respect to a third region of the substrate structure, the third region is located on one side of one of the first region and the second region or between the first region and the second region, the method of laser heat treatment is performed with respect to an entire effective region of the one surface of the substrate structure, the laser beam has a width in a range of 1 μm to 500 μm, the laser beam includes one of ultraviolet light, visible light, infrared light, and microwaves, the substrate structure includes a semiconductor film or an insulator film, and the heat treatment using the laser beam can change crystallinity, physical properties, or film quality of the semiconductor film or the insulator film, the substrate structure includes a wafer, an initial temperature of the substrate structure is 550°C or less before the heat treatment is performed using the laser beam. ​ ​ ​ ​ ​ ​ 2. The method according to claim 1, wherein ​ 3. The method according to claim 1, wherein ​ 4. The method according to claim 1, wherein ​ 5. The method according to claim 4, wherein ​ ​ 6. The method according to claim 5, wherein ​ 7. The method according to claim 1, wherein ​ 8. The method according to claim 1, wherein ​ 9. The method according to claim 1, wherein ​ 10. The method according to claim 1, wherein ​ ​ ​ 11. The method according to claim 1, wherein ​ 12. The method according to claim 1, wherein ​ 13. The method according to claim 1, wherein ​ 14. The method according to claim 1, wherein ​ 15. The method according to claim 1, wherein ​ 16. The method according to claim 1, wherein ​ The heating temperature of the laser beam irradiating the respective region of the substrate structure is in the range of 200°C to 3,000°C.

17. A method for producing an electronic device, characterized by comprising the steps of: performing heat treatment on a substrate structure using the laser heat treatment method according to any one of claims 1 to 16; and forming an electronic device using the heat-treated substrate structure.

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