A method and system for testing dynamic parameters of a GaN semiconductor power device

Abstract

The application discloses a kind of GaN semiconductor power device dynamic parameter test method and system, it is related to power semiconductor device test technical field, it solves the technical problem that the existing semiconductor power device test method in prior art existing semiconductor power device test method uses fixed sampling period to detect, leading to semiconductor power device test precision is lower, cannot accurately test semiconductor power device;Obtain test parameter, test the device to be tested based on test item;Obtain sampling interval, based on sampling interval acquisition detection parameter, based on detection parameter generation detection parameter change curve;Based on detection parameter change curve, sampling interval is updated;Obtain monitoring period, based on monitoring period acquisition monitoring parameter, based on monitoring parameter generation monitoring parameter change curve;The detection parameter change curve corresponding to each test item and the monitoring parameter change curve corresponding to each monitoring item are displayed and output;Ensure sampling accuracy, and then improve test precision.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of power semiconductor device testing, and particularly relates to a GaN semiconductor power device dynamic parameter testing method and system. BACKGROUND

[0002] Gallium nitride (GaN) is a major representative of the third generation of power semiconductors, and has significant advantages in structure and performance parameters. Compared with silicon (Si) MOSFET, GaN has larger band gap, higher thermal conductivity, stronger breakdown field strength and faster electron saturation drift speed, and is more suitable for high-frequency, high-voltage, high-temperature and high-power application occasions.

[0003] In the current field of semiconductor power device testing, conventional testing systems are mostly designed for traditional Si (silicon) based power devices. Existing semiconductor testing often sets fixed testing conditions and fixed sampling periods for testing semiconductor power devices. In the later testing stage, since the service life of the semiconductor reaches the limit, the detected parameters are extremely unstable, and the fixed sampling period is still used, which reduces the detection accuracy in the later stage. The nature of GaN semiconductor power devices and the working scenario determine that higher accuracy is required during testing to ensure the stability of the same batch of semiconductor power devices in use. SUMMARY

[0004] The application provides a GaN semiconductor power device dynamic parameter testing method and system, which solves the technical problem that the existing semiconductor power device testing method uses a fixed sampling period for detection, resulting in low testing accuracy of GaN semiconductor power devices and inability to accurately test GaN semiconductor power devices.

[0005] To achieve the above purpose, the application adopts the following technical solutions:

[0006] In a first aspect, a GaN semiconductor power device dynamic parameter testing method is provided, comprising:

[0007] Obtaining testing parameters, the testing parameters including a plurality of item parameters and corresponding parameter values, and the item parameters including temperature, voltage, frequency and load resistance, etc.

[0008] Testing the device to be tested based on the testing items;

[0009] Obtaining a sampling interval, collecting detection parameters based on the sampling interval, generating a detection parameter change curve based on the detection parameters, updating the sampling interval based on the detection parameter change curve, the detection parameters including a plurality of detection items and corresponding detection values, and the detection items including current, voltage and resistance of the GaN semiconductor power device, and the ohmic resistance being calculated by the ratio of voltage and current.

[0010] obtaining a monitoring period, collecting monitoring parameters based on the monitoring period, and generating a monitoring parameter change curve based on the monitoring parameters; the monitoring parameters include a plurality of monitoring items and corresponding monitoring values, and the monitoring items include temperature and current, etc., which are directly collected by a detection system arranged on the test device;

[0011] displaying and outputting the detection parameter change curves corresponding to the detection items and the monitoring parameter change curves corresponding to the monitoring items.

[0012] Based on the above technical solutions, in the GaN semiconductor power device dynamic parameter test method and system provided in the application, test parameters are obtained, and the to-be-tested device is tested based on the test items; a sampling interval is obtained, detection parameters are collected based on the sampling interval, and a detection parameter change curve is generated based on the detection parameters; the sampling interval is updated based on the detection parameter change curve; a monitoring period is obtained, monitoring parameters are collected based on the monitoring period, and a monitoring parameter change curve is generated based on the monitoring parameters; the detection parameter change curves corresponding to the detection items and the monitoring parameter change curves corresponding to the monitoring items are displayed and output; the sampling interval is updated based on the results collected in the current sampling interval, so that the sampling interval can adapt to the current semiconductor test state and targeted test data sampling is performed; and the sampling accuracy is ensured, and the test accuracy is improved.

[0013] In combination with the first aspect above, in a possible implementation manner, the detection parameter change curve is generated based on the detection parameters, including:

[0014] extracting detection values of each detection item in the detection parameters and corresponding collection time points; fitting a plurality of detection values of the same detection item according to the corresponding collection time points to obtain a current stage change curve of the detection item; a time interval between two adjacent collection time points is a sampling interval of a detection value corresponding to a next collection time point; the detection item is a parameter related to the performance of the GaN semiconductor power device, including current, voltage, resistance and other parameters of the GaN semiconductor power device;

[0015] obtaining a detection parameter change curve corresponding to a previous sampling interval, generating a detection parameter change curve corresponding to the detection item in a current sampling interval based on the detection parameter change curve and the stage change curve, and sequentially generating detection parameter change curves corresponding to each detection item.

[0016] In combination with the first aspect above, in a possible implementation manner, one fitting manner of the stage change curve includes:

[0017] The detection parameters corresponding to a preset number of sampling intervals are acquired, and detection values and collection time points in each detection parameter are extracted; the detection values and the corresponding collection time points are integrated into data points, and each data point is integrated into a data point set; and each data point in the data point set is fitted into a stage change curve based on a polynomial interpolation method.

[0018] With reference to the first aspect, in a possible implementation, the method further includes:

[0019] The detection parameter change curve and the stage change curve are acquired; a part of the detection parameter change curve and the stage change curve that is in time axis coincidence is acquired and marked as a first correction curve; and a part of the stage change curve and the detection parameter change curve that is in time axis coincidence is acquired and marked as a second correction curve.

[0020] The first correction curve and the second correction curve are substituted into a preset curve correction function to obtain a correction curve.

[0021] A part curve one of the detection parameter change curve and the stage change curve that is not in time axis coincidence, and a part curve two of the stage change curve and the detection parameter change curve that is not in time axis coincidence are acquired; and the part curve one, the correction curve, and the part curve two are integrated in time sequence to obtain a detection parameter change curve of a detection item corresponding to a current sampling interval.

[0022] With reference to the first aspect, in a possible implementation, an expression form of the curve correction function is:

[0023] ;

[0024] wherein, is the correction curve; is the first correction curve; is the second correction curve; is a weight coefficient of the first correction curve; is a weight coefficient corresponding to the second correction curve, and in the embodiment, the weight coefficient is 1;

[0025] ;

[0026] ;

[0027] wherein, is the i th sampling interval corresponding to the second correction curve, is a current sampling interval; i = 1, 2, …, I; I is a number of sampling intervals in the second correction curve; is a number of a sampling interval corresponding to a time t, for example, a time corresponding to a first sampling interval is 0-10 s, when t ∈ (0, 10], = 1, i.e. the first sampling interval corresponds to the number.

[0028] In a possible implementation manner of the first aspect, the updating of the sampling interval based on the detection parameter change curve comprises:

[0029] extracting a curve segment corresponding to the current sampling interval and a curve segment corresponding to the last sampling interval in the detection parameter change curve; and substituting the curve segment corresponding to the current sampling interval and the curve segment corresponding to the last sampling interval into a sampling interval correction function to obtain the next sampling interval; one expression form of the sampling interval correction function is:

[0030]

[0031] wherein, is the next sampling interval; is the current sampling interval; H the function is a volatility evaluation function; is a curve segment corresponding to the last sampling interval of the detection item numbered n; is a volatility evaluation result of the curve segment corresponding to the last sampling interval of the detection item numbered n; is a curve segment corresponding to the current sampling interval of the detection item numbered n; is a volatility evaluation result of the curve segment corresponding to the current sampling interval of the detection item numbered n; n is the number of the detection item, n = 1, 2, …, N; N is the total number of the detection items.

[0032] In a possible implementation manner of the first aspect, the generating of the monitoring parameter change curve based on the monitoring parameter comprises:

[0033] extracting monitoring value groups corresponding to a plurality of monitoring items in the monitoring parameter; and fitting each monitoring value in the monitoring value group into a stage item monitoring curve of the corresponding monitoring item according to the chronological order of the monitoring value.

[0034] obtaining a monitoring parameter change curve corresponding to the monitoring item in the last monitoring period; and obtaining a monitoring parameter change curve corresponding to the monitoring item in the current monitoring period by splicing the stage item monitoring curve to the monitoring parameter change curve.

[0035] In a possible implementation manner of the first aspect, the testing of the device under test based on the test item comprises:

[0036] obtaining parameter values of a plurality of item parameters in the test parameter; and controlling the values of the item parameters of the test device based on the parameter values.

[0037] ​With the first aspect above, in a possible implementation, the method further includes performing early warning based on the monitoring value set, including:

[0038] obtaining a monitoring value set corresponding to each monitoring item, and a safety threshold value corresponding to each monitoring item;

[0039] determining whether there is a monitoring value greater than the corresponding safety threshold value in the monitoring value set; if yes, recording a monitoring state corresponding to the monitoring item corresponding to the monitoring value set as an abnormal state; if no, recording the monitoring state corresponding to the monitoring item as a normal state;

[0040] obtaining the monitoring state corresponding to each monitoring item in sequence;

[0041] performing early warning on the monitoring item with the abnormal monitoring state.

[0042] In a second aspect, the application provides a GaN semiconductor power device dynamic parameter testing device, including a processor and a storage medium; the storage medium includes instructions, and the processor is configured to execute the instructions to implement the method described in the first aspect and any possible implementation of the first aspect. The GaN semiconductor power device dynamic parameter testing device can be an electronic device or a chip in an electronic device.

[0043] In a third aspect, the application provides a GaN semiconductor power device dynamic parameter testing system, including a data acquisition module, a testing module, a safety protection module, and a data management module.

[0044] The testing module includes a testing unit, a detection unit, and a monitoring unit.

[0045] The testing unit is configured to obtain testing parameters, including a plurality of item parameters and corresponding parameter values; and perform testing on a device under test according to testing items.

[0046] The detection unit is configured to generate a detection parameter change curve based on detection parameters; and update a sampling interval based on the detection parameter change curve; the detection parameters include a plurality of detection items and corresponding detection values.

[0047] The monitoring unit is configured to generate a monitoring parameter change curve based on monitoring parameters; the monitoring parameters include a plurality of monitoring items and corresponding monitoring values.

[0048] The data acquisition module is configured to obtain a sampling interval, acquire detection parameters based on the sampling interval; and obtain a monitoring period, and acquire monitoring parameters based on the monitoring period.

[0049] The safety protection module is configured to obtain a monitoring value set corresponding to each monitoring item in the monitoring parameters, and perform early warning based on the monitoring value set.

[0050] The data management module is configured to display and output the detection parameter change curves corresponding to the detection items and the monitoring parameter change curves corresponding to the monitoring items, and store the detection parameter change curves and detection values corresponding to the detection items, and the monitoring parameter change curves and monitoring values corresponding to the monitoring items.

[0051] In a fourth aspect, a computer-readable storage medium is provided, and the computer-readable storage medium stores instructions. When the instructions are executed on the GaN semiconductor power device dynamic parameter testing apparatus, the GaN semiconductor power device dynamic parameter testing apparatus performs the method described in the first aspect and any possible implementation manner of the first aspect.

[0052] In a fifth aspect, a computer program product is provided, and the computer program product contains instructions. When the computer program product is executed on the GaN semiconductor power device dynamic parameter testing apparatus, the GaN semiconductor power device dynamic parameter testing apparatus performs the method described in the first aspect and any possible implementation manner of the first aspect.

[0053] The GaN semiconductor power device dynamic parameter testing method and system provided in the present application can test the device to be tested based on the test items by acquiring the test parameters, acquire the sampling interval, acquire the detection parameters based on the sampling interval, generate the detection parameter change curves based on the detection parameters, update the sampling interval based on the detection parameter change curves, acquire the monitoring period, acquire the monitoring parameters based on the monitoring period, generate the monitoring parameter change curves based on the monitoring parameters, display and output the detection parameter change curves corresponding to the detection items and the monitoring parameter change curves corresponding to the monitoring items, and update the sampling interval based on the results acquired in the present sampling interval, so as to ensure that the sampling interval can adapt to the current semiconductor testing state and perform targeted test data sampling, thereby ensuring the sampling precision and improving the testing precision.

[0054] It should be understood that the description of technical features, technical solutions, advantages or similar language in this application does not imply that all features and advantages can be realized in any single embodiment. On the contrary, it can be understood that the description of a feature or advantage means that the specific technical feature, technical solution or advantage is included in at least one embodiment. Therefore, the description of technical features, technical solutions or advantages in this specification does not necessarily refer to the same embodiment. Further, the technical features, technical solutions and advantages described in this embodiment can be combined in any appropriate manner. Those skilled in the art will understand that the embodiments can be implemented without one or more specific technical features, technical solutions or advantages of a particular embodiment. In other embodiments, additional technical features and advantages can be identified in specific embodiments that do not embody all embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0055] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings from these drawings without creative labor.

[0056] Figure 1 The schematic diagram of the steps of the dynamic parameter test method in the present application;

[0057] Figure 2 The schematic diagram of the module connection of the dynamic parameter test system of the present application. DETAILED DESCRIPTION

[0058] The technical solutions of the present application will be described below in conjunction with the embodiments. Obviously, the described embodiments are only some of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0059] Please refer to Figure 1 The first aspect embodiment of the present application provides a dynamic parameter test method for GaN semiconductor power devices, comprising:

[0060] Obtaining test parameters, the test parameters including a plurality of item parameters and corresponding parameter values, the item parameters including temperature, voltage, frequency and load resistance, etc. The specific values of the test items are set by experts according to the tested devices. In this embodiment, the GaN semiconductor power devices are tested, the voltage is set to 650V, the temperature is set to 125℃, the frequency is set to 500KHz, and the load resistance is set to 5Ω, etc.

[0061] Test the device under test based on the test items; that is, use the parameter values to control the values of the various item parameters of the test device;

[0062] Obtain a sampling interval, collect detection parameters based on the sampling interval, generate a detection parameter change curve based on the detection parameters, update the sampling interval based on the detection parameter change curve; the detection parameters include a plurality of detection items and their corresponding detection values, the detection items include the current, voltage and resistance of the GaN semiconductor power device, and the ohmic resistance is calculated by the ratio of voltage and current;

[0063] Obtain a monitoring period, collect monitoring parameters based on the monitoring period, generate a monitoring parameter change curve based on the monitoring parameters; the monitoring parameters include a plurality of monitoring items and their corresponding monitoring values, the monitoring items include temperature and current, and are directly collected by the detection system arranged on the test device;

[0064] Display and output the detection parameter change curves corresponding to each detection item and the monitoring parameter change curves corresponding to each monitoring item.

[0065] Based on the above technical solution, in the GaN semiconductor power device dynamic parameter test method and system provided in the application, by obtaining test parameters, the device under test is tested based on the test items; a sampling interval is obtained, detection parameters are collected based on the sampling interval, and a detection parameter change curve is generated based on the detection parameters; the sampling interval is updated based on the detection parameter change curve; a monitoring period is obtained, monitoring parameters are collected based on the monitoring period, and a monitoring parameter change curve is generated based on the monitoring parameters; the detection parameter change curves corresponding to each detection item and the monitoring parameter change curves corresponding to each monitoring item are displayed and output; the results collected by the sampling interval are used to update the sampling interval, so that the sampling interval can adapt to the current semiconductor test state and perform targeted test data sampling; thereby ensuring the sampling accuracy and improving the test accuracy.

[0066] Secondly, the method in the embodiment is applied in multi-channel semiconductor power device testing, and since only newly introduced data is processed, the amount of data for operation can be greatly saved, the test accuracy is ensured, and the test efficiency is improved.

[0067] In a possible implementation, the generating of the detection parameter change curve based on the detection parameters comprises: extracting detection values of each detection item in the detection parameters and corresponding collection time points; fitting a plurality of detection values of the same detection item according to the corresponding collection time points to obtain a current stage change curve of the detection item; a time interval between two adjacent collection time points is a sampling interval of the detection value corresponding to the latter collection time point; the detection item is a parameter related to the performance of the GaN semiconductor power device, including current, voltage, resistance and other parameters of the GaN semiconductor power device;

[0068] obtaining a detection parameter change curve corresponding to the previous sampling interval, and generating a detection parameter change curve corresponding to the detection item in the current sampling interval based on the detection parameter change curve and the stage change curve; and sequentially generating detection parameter change curves corresponding to each detection item.

[0069] In a possible implementation, one fitting method of the stage change curve comprises: obtaining detection parameters corresponding to a preset number of sampling intervals, extracting detection values and collection time points in each detection parameter; integrating the detection values and the corresponding collection time points into data points, and integrating each data point into a data point set; fitting each data point in the data point set into a stage change curve based on a polynomial interpolation method; the polynomial interpolation method can comprehensively consider the values of each data point when fitting a curve with a small amount of data, and is better in comprehensiveness.

[0070] In a possible implementation, the generating of the detection parameter change curve corresponding to the detection item in the current sampling interval based on the detection parameter change curve and the stage change curve comprises: obtaining the detection parameter change curve and the stage change curve; obtaining a part of the detection parameter change curve and the stage change curve that are coincident in time axis, and marking the part as a correction curve one; obtaining a part of the stage change curve and the detection parameter change curve that are coincident in time axis, and marking the part as a correction curve two;

[0071] obtaining the correction curve one and the correction curve two in a set curve correction function to obtain a correction curve;

[0072] obtaining a part curve one of the detection change curve and the stage change curve that are not coincident in time axis, and a part curve two of the stage change curve and the detection parameter change curve that are not coincident in time axis; and integrating the part curve one, the correction curve and the part curve two in time sequence to obtain a detection parameter change curve of the detection item corresponding to the current sampling interval.

[0073] The embodiment updates the fitting curve in the set sampling interval before the new data when the new data is acquired, so as to ensure the accuracy of the fitting curve; for example, if the number of set sampling intervals is 5, the fitting curve between each sampling interval needs to be updated for 5 times, and each update needs to refer to the newly acquired detection data, so that the accuracy of the fitting curve is greatly improved.

[0074] In a possible implementation, an expression form of the curve correction function is as follows:

[0075] ;

[0076] wherein, is the correction curve; is correction curve one; is correction curve two; is a weight coefficient of the correction curve one; is a weight coefficient corresponding to the correction curve two, and the weight coefficient in the embodiment is

[0077] ;

[0078] ;

[0079] wherein, is the i th sampling interval corresponding to the correction curve two, is the current sampling interval; i = 1, 2, …, I; I is the number of sampling intervals in the correction curve two; is the number of the sampling interval corresponding to the time t, for example, the first sampling interval corresponds to 0-10 s, when t ∈ (0, 10], the number of the first sampling interval is = 1.

[0080] The embodiment sets the weight coefficient function corresponding to the correction curve two through the above formula, when the current sampling interval is less than the average value of the set number of sampling intervals, the smaller the sampling interval, that is, the higher the density of the data group of the newly added real data points, the higher the accuracy of the newly fitted curve corresponding to the data points, so that the weight coefficient corresponding to the correction curve two is set to be larger than 1 / 2 when the curve is corrected. At the same time, the data points collected are closer to the curve segment of the current time point, and the curve segment is more affected by the newly added data when fitting, so that the weight coefficient corresponding to the curve segment close to the current time point is set to be larger, so as to ensure the accuracy of the update of the curve segment.

[0081] In another embodiment, the detection parameter change curve and the stage change curve are respectively marked as and through the following formula:

[0082] ;

[0083] Wherein, tx is the time point at which the detection parameter variation curve and the phase variation curve coincide; td is the time point at which the detection parameter variation curve and the phase variation curve coincide.

[0084] In a possible implementation, the sampling interval is updated based on the detection parameter variation curve, comprising: extracting a curve segment corresponding to the current sampling interval and a curve segment corresponding to the previous sampling interval in the detection parameter variation curve; substituting the curve segment corresponding to the previous sampling interval and the curve segment corresponding to the previous sampling interval into a sampling interval correction function to obtain the next sampling interval; one expression form of the sampling interval correction function is:

[0085] ;

[0086] Wherein, is the next sampling interval; is the current sampling interval; H is the volatility evaluation function; is a curve segment corresponding to the previous sampling interval of the detection item numbered n; is a volatility evaluation result of the curve segment corresponding to the previous sampling interval of the detection item numbered n; is a curve segment corresponding to the current sampling interval of the detection item numbered n; is a volatility evaluation result of the curve segment corresponding to the current sampling interval of the detection item numbered n; n is the number of the detection item, n = 1, 2, …, N; N is the total number of the detection items; one expression form of the volatility evaluation function in the embodiment is:

[0087] ;

[0088] Wherein, is a set high frequency value, and the specific value is set by experts according to experience, is a Fourier transform performed on , is a transformed independent variable, indicating a frequency; t1 is a starting time of the function , and t2 is an ending time of the function ;

[0089] = ;

[0090] ;

[0091] Wherein, t3 is a starting time of , and t4 is an ending time of ; t4 is a start time, t5, of the fluctuation a termination time of the fluctuation;

[0092] The embodiment evaluates the fluctuation of the detection value by using the fluctuation evaluation function, when the proportion of the detection data in the high frequency band is relatively high, the fluctuation of the detection value is stronger, and the corresponding fluctuation evaluation result is larger. At this time, in order to obtain more accurate detection value, the sampling interval needs to be reduced to ensure that there are sufficient detection values for curve fitting, and then the accuracy of the fitted detection parameter change curve is ensured.

[0093] In a possible implementation, the generating the monitoring parameter change curve based on the monitoring parameter comprises: extracting a monitoring value group corresponding to a plurality of monitoring items in the monitoring parameter, and fitting each monitoring value in the monitoring value group into a stage item monitoring curve of a corresponding monitoring item according to the order of the collection time of the monitoring value.

[0094] obtaining a monitoring parameter change curve corresponding to the monitoring item in a previous monitoring period; and splicing the stage item monitoring curve to the monitoring parameter change curve to obtain a monitoring parameter change curve corresponding to the current monitoring period.

[0095] In a possible implementation, the testing the device under test based on the test item comprises: obtaining parameter values of a plurality of item parameters in the test parameter, and controlling the values of the item parameters of the test device based on the parameter values.

[0096] In a possible implementation, the method further comprises performing early warning based on the monitoring value group, comprising: obtaining a monitoring value group corresponding to each monitoring item, and a safety threshold value corresponding to each monitoring item.

[0097] determining whether there is a monitoring value greater than the corresponding safety threshold value in the monitoring value group; if yes, recording the monitoring state of the monitoring item corresponding to the monitoring value group as an abnormal state; and if no, recording the monitoring state of the monitoring item as a normal state.

[0098] obtaining the monitoring state of each monitoring item in turn.

[0099] performing early warning on the monitoring item whose monitoring state is the abnormal state.

[0100] In a second aspect, the application provides a GaN semiconductor power device dynamic parameter testing device, comprising: a processor and a storage medium; the storage medium comprises instructions, and the processor is configured to execute the instructions to implement the method described in the first aspect and any possible implementation of the first aspect. The GaN semiconductor power device dynamic parameter testing device can be an electronic device or a chip in an electronic device.

[0101] Please refer to Figure 2 In a third aspect, the present application provides a GaN semiconductor power device dynamic parameter testing system, comprising a data acquisition module, a testing module, a safety protection module and a data management module.

[0102] The testing module comprises a testing unit, a detection unit and a monitoring unit.

[0103] The testing unit is configured to acquire testing parameters, wherein the testing parameters comprise a plurality of item parameters and corresponding parameter values, and perform testing on a device under test according to a testing item.

[0104] The detection unit is configured to generate a detection parameter change curve based on detection parameters, and update a sampling interval based on the detection parameter change curve, wherein the detection parameters comprise a plurality of detection items and corresponding detection values.

[0105] The monitoring unit is configured to generate a monitoring parameter change curve based on monitoring parameters, wherein the monitoring parameters comprise a plurality of monitoring items and corresponding monitoring values.

[0106] The data acquisition module is configured to acquire a sampling interval, acquire detection parameters based on the sampling interval, acquire a monitoring period, and acquire monitoring parameters based on the monitoring period.

[0107] The safety protection module is configured to acquire a monitoring value set corresponding to each monitoring item in the monitoring parameters, and perform early warning based on the monitoring value set.

[0108] The data management module is configured to display and output detection parameter change curves corresponding to each detection item and monitoring parameter change curves corresponding to each monitoring item, and store the detection parameter change curves and detection values corresponding to each detection item, and the monitoring parameter change curves and monitoring values corresponding to each monitoring item.

[0109] In a fourth aspect, the present application provides a computer readable storage medium, wherein the computer readable storage medium stores instructions, and when the instructions are executed on a GaN semiconductor power device dynamic parameter testing device, the GaN semiconductor power device dynamic parameter testing device performs the method described in the first aspect and any possible implementation manner of the first aspect.

[0110] In a fifth aspect, the present application provides a computer program product comprising instructions, and when the computer program product is executed on a GaN semiconductor power device dynamic parameter testing device, the GaN semiconductor power device dynamic parameter testing device performs the method described in the first aspect and any possible implementation manner of the first aspect.

[0111] Part of the data in the above formula is the value calculated by removing the dimension, and the formula is obtained by software simulation of a large amount of collected data to obtain a formula closest to the real situation; the preset parameters and the preset threshold in the formula are set by the person skilled in the art according to the actual situation or obtained by a large amount of data simulation.

[0112] The working principle of the present application is as follows:

[0113] By acquiring the test parameters, the device to be tested is tested based on the test items; the sampling interval is acquired, the detection parameters are collected based on the sampling interval, and the detection parameter change curve is generated based on the detection parameters; the sampling interval is updated based on the detection parameter change curve; the monitoring period is acquired, the monitoring parameters are collected based on the monitoring period, and the monitoring parameter change curve is generated based on the monitoring parameters; the detection parameter change curves corresponding to each test item and the monitoring parameter change curves corresponding to each monitoring item are displayed and output; the results collected by the current sampling interval are used to update the sampling interval, so that the sampling interval can adapt to the current semiconductor test state and perform targeted test data sampling; and then the sampling accuracy is ensured and the test accuracy is improved.

[0114] The above embodiments are only used to illustrate the technical method of the present application and not to limit it. Although the present application has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical method of the present application can be modified or replaced equivalently without departing from the spirit and scope of the technical method of the present application.

Claims

1. A method for testing dynamic parameters of a GaN semiconductor power device, characterized in that, The method comprises the following steps: Obtaining test parameters, and testing a device under test based on test items; Obtaining a sampling interval, collecting detection parameters based on the sampling interval, and generating a detection parameter change curve based on the detection parameters; including: extracting detection values of each detection item in the detection parameters and corresponding collection time; fitting a plurality of detection values of the same detection item according to the corresponding collection time to obtain a current stage change curve of the detection item; obtaining a detection parameter change curve corresponding to a previous sampling interval, and generating a detection parameter change curve corresponding to the detection item in the current sampling interval based on the detection parameter change curve and the stage change curve; including: Obtaining the detection parameter change curve and the stage change curve; obtaining a part of the detection parameter change curve and the stage change curve that coincide in time axis, and marking it as correction curve one; obtaining a part of the stage change curve and the detection parameter change curve that coincide in time axis, and marking it as correction curve two; substituting the correction curve one and the correction curve two into a set curve correction function to obtain a correction curve; one expression form of the curve correction function is: ； wherein, is a correction curve; is a correction curve one; is a correction curve two; is a weight coefficient of the correction curve one; is a weight coefficient corresponding to the correction curve two; the weight coefficient of the correction curve two is set based on a plurality of sampling intervals corresponding to the correction curve two, comprising: ； ； wherein, is the i-th sampling interval of the second correction curve, is the current sampling interval; i = 1, 2,..., I; I is the number of sampling intervals in the second correction curve; is the number of the sampling interval corresponding to the time t; Obtaining a part curve one of the detection change curve and the stage change curve that do not coincide in time axis, and a part curve two of the stage change curve and the detection parameter change curve that do not coincide in time axis; integrating the part curve one, the correction curve and the part curve two in time sequence to obtain a detection parameter change curve of the detection item corresponding to the current sampling interval; Generating the detection parameter change curves of the detection items in sequence; Updating the sampling interval based on the detection parameter change curve; Obtaining a monitoring period, collecting monitoring parameters based on the monitoring period, and generating a monitoring parameter change curve based on the monitoring parameters; Displaying and outputting the detection parameter change curves of the detection items and the monitoring parameter change curves of the monitoring items.

2. The method for testing dynamic parameters of GaN semiconductor power devices according to claim 1, characterized in that, One fitting method of the stage change curve comprises: Obtaining detection parameters corresponding to a set number of sampling intervals, extracting detection values and collection time in each detection parameter; integrating the detection values and the corresponding collection time into data points, and integrating each data point into a data point set; fitting each data point in the data point set into a stage change curve based on a polynomial interpolation method.

3. The method for testing dynamic parameters of GaN semiconductor power devices according to claim 1, characterized in that, The updating of the sampling interval based on the detection parameter change curve comprises: Extracting a curve segment corresponding to the current sampling interval and a curve segment corresponding to the previous sampling interval in the detection parameter change curve; substituting the curve segment corresponding to the current sampling interval and the curve segment corresponding to the previous sampling interval into a sampling interval correction function to obtain a next sampling interval.

4. The method of claim 1, wherein the GaN semiconductor power device is a GaN HEMT. The generation of the monitoring parameter change curve based on the monitoring parameters comprises: Extracting a monitoring value group corresponding to a plurality of monitoring items in the monitoring parameters, and fitting each monitoring value in the monitoring value group into a stage item monitoring curve of the corresponding monitoring item according to the collection time in sequence; Obtaining a monitoring parameter change curve corresponding to the monitoring item in a previous monitoring period; splicing the stage item monitoring curve to the monitoring parameter change curve to obtain a monitoring parameter change curve corresponding to the current monitoring period.

5. The method of claim 4, wherein the method further comprises: Further comprising prewarning based on the monitoring value group, comprising: Obtain a monitoring value group corresponding to each monitoring item, and a safety threshold value corresponding to each monitoring item; Determine whether there is a monitoring value greater than the corresponding safety threshold value in the monitoring value group; if yes, record the monitoring state of the monitoring item corresponding to the monitoring value group as an abnormal state; if no, record the monitoring state of the monitoring item corresponding to the monitoring value group as a normal state; Obtain the monitoring state of each monitoring item in turn; Pre-alert the monitoring item with an abnormal monitoring state.

6. The method of claim 1, wherein the GaN semiconductor power device is a GaN HEMT. The testing of the device under test based on the test item includes: Obtain parameter values of a plurality of item parameters in the test parameters, and control the values of each item parameter of the test device based on the parameter values.

7. A GaN semiconductor power device dynamic parameter testing system based on the application of the GaN semiconductor power device dynamic parameter testing method according to any one of claims 1 to 6; characterized in that, It includes: a data acquisition module, a test module, a safety protection module, and a data management module; The test module includes a test unit, a detection unit, and a monitoring unit; The test unit is configured to obtain test parameters, the test parameters including a plurality of item parameters and corresponding parameter values; and test the device under test based on the test item; The detection unit is configured to generate a detection parameter change curve based on detection parameters, and update the sampling interval based on the detection parameter change curve; the detection parameters including a plurality of detection items and corresponding detection values; The monitoring unit is configured to generate a monitoring parameter change curve based on monitoring parameters; the monitoring parameters including a plurality of monitoring items and corresponding monitoring values; The data acquisition module is configured to obtain a sampling interval, acquire detection parameters based on the sampling interval; and obtain a monitoring period, and acquire monitoring parameters based on the monitoring period; The safety protection module is configured to obtain a monitoring value group corresponding to each monitoring item in the monitoring parameters, and pre-alert based on the monitoring value group; The data management module is configured to display and output the detection parameter change curve corresponding to each detection item and the monitoring parameter change curve corresponding to each monitoring item; and store the detection parameter change curve and detection values corresponding to each detection item, and the monitoring parameter change curve and monitoring values corresponding to each monitoring item. ​

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