Semiconductor process film layer measuring method and measuring device

Abstract

The invention provides a method and a device for measuring a semiconductor process film, which form a rechecking point under the condition that the thickness of a film with a measuring point on a wafer is out of the average thickness range of the film, and measure the thickness of the film of the rechecking point. And judging whether the wafer is qualified or not according to whether the film layer thickness of the rechecking point is within the film layer mean value thickness range or not. The problem that the flatness of the surface of the wafer is misjudged due to the fact that pollutants just exist at the measurement position is avoided, and the reliability of semiconductor process film layer measurement is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method and apparatus for measuring semiconductor process film layers. Background Technology

[0002] In semiconductor manufacturing, after a wafer completes the metal or non-metal thin film formation process, a measurement and measurement (MEP) instrument is used to measure the film thickness. To ensure more accurate measurement, the measurement spot size is gradually reduced. If contaminants happen to be present at the measurement location, the measured data will be abnormal, even though the measurement data is normal outside this small area. Therefore, misjudging the wafer surface as uneven due to this anomaly will lead to a false positive. Summary of the Invention

[0003] The purpose of this invention is to provide a method and apparatus for measuring semiconductor process film layers, so as to solve the problem of misjudging wafer surface flatness in the prior art.

[0004] To address the aforementioned technical problems, the present invention provides a method for measuring semiconductor process film layers, the method comprising:

[0005] Laser is used to measure the film thickness at multiple measurement points on a wafer, and the average film thickness range is obtained.

[0006] Determine whether the film thickness at each measurement point on the wafer is within the range of the average film thickness;

[0007] If the film thickness at each of the measurement points on the wafer is within the range of the average film thickness, then the wafer is deemed qualified.

[0008] If the thickness of the film layer at the measurement point on the wafer is outside the range of the average thickness of the film layer, then the measurement point is a deviation point and forms a verification point. There is one or more predetermined intervals between the verification point and the deviation point.

[0009] The film thickness at the verification point was measured using a laser; and,

[0010] Determine whether the film thickness at the verification point is within the range of the average film thickness. If it is within the range of the average film thickness, then the wafer is deemed qualified.

[0011] Optionally, in the semiconductor process film measurement method, the verification points include a first direction verification point, a second direction verification point, a third direction verification point, and a fourth direction verification point. A rectangular coordinate system is established with the deviation point as the origin. The first direction verification point is located on the positive half-axis of the X-axis, the second direction verification point is located on the positive half-axis of the Y-axis, the third direction verification point is located on the negative half-axis of the X-axis, and the fourth direction verification point is located on the negative half-axis of the Y-axis.

[0012] Optionally, in the semiconductor process film measurement method, the number of the first direction verification point, the second direction verification point, the third direction verification point, and the fourth direction verification point are all multiple.

[0013] Optionally, in the semiconductor process film measurement method, if the film thickness at one of the verification points in each direction is within the range of the average film thickness, then the wafer is determined to be qualified.

[0014] If the film thickness of all the verification points in at least one direction is outside the range of the average film thickness, then the wafer is deemed unqualified.

[0015] Optionally, in the semiconductor process film measurement method, the semiconductor process film measurement method further includes:

[0016] The region outside the average thickness range of the film layer is obtained based on the film layer thickness at the verification point in each direction.

[0017] Optionally, in the semiconductor process film measurement method, the predetermined interval distance is between 1 / 20 and 1 times the diameter of the laser spot.

[0018] Optionally, in the semiconductor process film measurement method, the average film thickness range is obtained by adding and / or subtracting n times the standard deviation from the average film thickness at all measurement points on the wafer, where n is a natural number.

[0019] The present invention also provides a semiconductor process film layer measurement device, the semiconductor process film layer measurement device comprising:

[0020] The detection device is used to measure the film thickness at multiple measurement points and / or verification points on a wafer using a laser;

[0021] A control device, which is used to obtain the film layer average thickness range based on the film layer thicknesses of each measurement point measured by the detection device; determine whether the film layer thicknesses of each measurement point are within the film layer average thickness range. If the film layer thickness of a measurement point on the wafer is outside the film layer average thickness range, then the measurement point is a deviation point, and a recheck point is formed and provided to the detection device, where there is one or more predetermined interval distances between the recheck point and the deviation point; and determine whether the wafer is qualified according to the film layer thickness of the measurement point and / or the recheck point.

[0022] Optionally, in the semiconductor process film layer measuring device, the control device determining whether the wafer is qualified according to the film layer thickness of the measurement point and / or the recheck point includes:

[0023] Determine whether the film layer thicknesses of each measurement point on the wafer are within the film layer average thickness range. If the film layer thicknesses of each measurement point on the wafer are all within the film layer average thickness range, then determine that the wafer is qualified; and / or,

[0024] Determine whether the film layer thickness of the recheck point is within the film layer average thickness range. If it is within the film layer average thickness range, then determine that the wafer is qualified.

[0025] Optionally, in the semiconductor process film layer measuring device, the predetermined interval distance is between 1 / 20 times and 1 times the spot diameter of the laser; the film layer average thickness range is obtained by adding and / or subtracting n times the standard deviation to the average value of the film layer thicknesses of all measurement points on the wafer, where n is a natural number.

[0026] In the semiconductor process film layer measuring method and measuring device provided by the present invention, for the case where the film layer thickness of a measurement point on the wafer is outside the film layer average thickness range, a recheck point is formed, and the film layer thickness of the recheck point is measured. Whether the wafer is qualified is determined according to whether the film layer thickness of the recheck point is within the film layer average thickness range. It avoids the problem of misjudging the surface flatness of the wafer due to the presence of contaminants just at the measurement position, and improves the reliability of semiconductor process film layer measurement. Description of the Drawings

[0027] Figure 1 is a schematic flowchart of the semiconductor process film layer measuring method according to an embodiment of the present invention.

[0028] Figure 2 is a schematic distribution diagram of measurement points on the wafer according to an embodiment of the present invention.

[0029] Figure 3 is a schematic distribution diagram of deviation points and recheck points according to an embodiment of the present invention.

[0030] Figure 4 This is a schematic diagram of the semiconductor process film layer measurement device according to an embodiment of the present invention.

[0031] The reference numerals in the attached figures are explained as follows:

[0032] 100-Wafer; 110, 110A, 110B, 110C, 110D, 110E, 110F, 110G, 110H

[0033] 110I - Measurement point; 120 - Deviation point; 130 - Verification point; 130A, 130A1, 130A2, 130A3 - First direction verification point; 130B, 130B1, 130B2, 130B3 - Second direction verification point; 130C, 130C1, 130C2, 130C3 - Third direction verification point; 130D, 130D1, 130D2, 130D3 - Fourth direction verification point; 140 - Deviation zone; 200 - Semiconductor process film layer measurement device; 210 - Detection device; 220 - Control device. Detailed Implementation

[0034] The semiconductor process film measurement method and measuring device proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this invention.

[0035] The terminology used in this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. Unless otherwise defined in this application, the technical or scientific terms used in this invention should be understood in their ordinary sense by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, "a" or "one," and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. "A plurality" or "several" indicates two or more. Unless otherwise indicated, terms such as "upper / upper layer," "lower / lower layer," and similar terms are for ease of description only and are not limited to a location or spatial orientation. Terms such as "comprising" or "including" mean that the element or object preceding "comprising" covers the element or object listed following "comprising" or "including" and its equivalents, and does not exclude other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections and can include electrical connections, whether direct or indirect. The singular forms “a,” “the,” and “the” used in this specification and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0036] The core idea of ​​this invention is to provide a method and apparatus for measuring film thickness in semiconductor processes. This method utilizes laser to measure the film thickness at multiple measurement points on a wafer, obtaining the average film thickness range. For measurement points on the wafer where the film thickness falls outside the average thickness range, verification points are formed, and the film thickness at these verification points is measured. The wafer's flatness is then judged based on whether the film thickness at these verification points falls within the average thickness range. This avoids the problem of misjudging wafer surface flatness due to contaminants present at the measurement location, thus improving the reliability of semiconductor process film thickness measurement.

[0037] Please refer to Figure 1 This is a schematic flowchart of a semiconductor process film measurement method according to an embodiment of the present invention.

[0038] like Figure 1 As shown in the embodiments of this application, the semiconductor process film measurement method includes:

[0039] Perform step S10: Measure the film thickness at multiple measurement points on the wafer using a laser, and obtain the average film thickness range;

[0040] Execute step S20: Determine whether the film thickness at each measurement point on the wafer is within the range of the average film thickness;

[0041] If so, proceed to step S30: determine that the wafer is qualified and end the measurement;

[0042] If not, proceed to step S40: generate a checkpoint;

[0043] Step S50: Measure the film thickness at the verification point using a laser;

[0044] Execute step S60: Determine whether the film thickness at the verification point is within the range of the average film thickness;

[0045] If so, proceed to step S70: determine that the wafer is qualified and end the measurement;

[0046] If not, proceed to step S80: determine that the wafer is defective and end the measurement.

[0047] like Figure 2 As shown in this embodiment of the application, nine measurement points 110 are schematically shown on the wafer 100, namely measurement point 110A, measurement point 110B, measurement point 110C, measurement point 110D, measurement point 110E, measurement point 110F, measurement point 110G, measurement point 110H and measurement point 110I.

[0048] In some embodiments of this application, the film thickness at measurement points 110A, 110B, 110C, 110D, 110E, 110F, 110G, 110H, and 110I is first measured sequentially using a laser. For example, the film thickness at measurement point 110A can be obtained as 'a', the film thickness at measurement point 110B as 'b', the film thickness at measurement point 110C as 'c', the film thickness at measurement point 110D as 'd', the film thickness at measurement point 110E as 'e', ​​the film thickness at measurement point 110F as 'f', the film thickness at measurement point 110G as 'g', the film thickness at measurement point 110H as 'h', and the film thickness at measurement point 110I as 'i'. In this embodiment of the application, the laser spot is small, for example, the spot size is 35μm*35μm; in other embodiments of the application, the laser spot may be larger or smaller.

[0049] Next, the average film thickness av of all measurement points 110 on the wafer 100 can be obtained using the film thicknesses a, b, c, d, e, f, g, h, and i. In some embodiments of this application, the range of the average film thickness can be obtained by adding and / or subtracting n times the standard deviation s from the average film thickness av, where n is a natural number. For example, the range of the average film thickness can be between av-2s (average film thickness av minus 2 times the standard deviation s) and av+2s (average film thickness av plus 2 times the standard deviation s); or between av-3s and av+3s; or between av-1s and av+1s, or between av-4s and av+4s, etc.

[0050] Next, the film thickness a at measurement point 110A, the film thickness b at measurement point 110B, the film thickness c at measurement point 110C, the film thickness d at measurement point 110D, the film thickness e at measurement point 110E, the film thickness f at measurement point 110F, the film thickness g at measurement point 110G, the film thickness h at measurement point 110H, and the film thickness i at measurement point 110I are compared with the average film thickness range. If the film thicknesses at measurement points 110A, 110B, 110C, 110D, 110E, 110F, 110G, 110H, and 110I are all within the average film thickness range, then the flatness of the wafer 100 is determined to be qualified.

[0051] If any of the measurement points 110A, 110B, 110C, 110D, 110E, 110F, 110G, 110H, and 110I has a film thickness outside the range of the average film thickness, the corresponding measurement point 110 is called a deviation point 120. Figure 2 As shown, for example, if the film thickness e at the measurement point 110E is outside the range of the average film thickness, then the measurement point 110E is called the deviation point 120.

[0052] In some embodiments of this application, the number of measurement points 110 outside the average thickness range of the film layer can also be determined. For example, if the number of measurement points 110 outside the average thickness range of the film layer exceeds 20%, 25%, or 30% of the total number of measurement points 110, the flatness of the wafer 110 can be directly determined to be unqualified.

[0053] Next, as Figure 3As shown, a verification point 130 is formed based on the deviation point 120, wherein there is one or more predetermined intervals between the verification point 130 and the deviation point 120. The predetermined interval can be set according to the spot size; for example, the predetermined interval can be between 1 / 20 and 1 times the diameter of the laser spot. For example, in some embodiments of this application, the predetermined interval can be approximately 1 / 3 of the radial dimension of the laser spot.

[0054] Please continue to refer to this. Figure 3 In this embodiment, the verification point 130 includes a first-direction verification point 130A, a second-direction verification point 130B, a third-direction verification point 130C, and a fourth-direction verification point 130D. These four points are located around the deviation point 120, for example, to the right, above, left, and below it. For instance, a Cartesian coordinate system can be established with the deviation point 120 as the origin. The first-direction verification point 130A is located on the positive X-axis, the second-direction verification point 130B on the positive Y-axis, the third-direction verification point 130C on the negative X-axis, and the fourth-direction verification point 130D on the negative Y-axis. This allows for better acquisition of the film thickness around the deviation point 120.

[0055] The number of the first direction verification point 130A, the second direction verification point 130B, the third direction verification point 130C, and the fourth direction verification point 130D can all be multiple. For example... Figure 3 As shown in the embodiment of this application, there are three verification points in each of the following directions: the first direction verification point 130A, the second direction verification point 130B, the third direction verification point 130C, and the fourth direction verification point 130D. These are respectively the first direction verification points 130A1, 130A2, and 130A3; the second direction verification points 130B1, 130B2, and 130B3; the third direction verification points 130C1, 130C2, and 130C3; and the fourth direction verification points 130D1, 130D2, and 130D3.

[0056] In this embodiment of the application, the laser spot size is approximately 35μm*35μm, and the predetermined interval distance can be about 1 / 3 of the radial dimension of the laser spot. Here, the predetermined interval distance can be set to 12μm.

[0057] That is, the interval between the deviation point 120 and the first direction verification point 130A1 is 12μm; the interval between the first direction verification point 130A1 and the first direction verification point 130A2 is 12μm, which means there are two predetermined intervals between the deviation point 120 and the first direction verification point 130A2, and the interval between them is 24μm; the interval between the first direction verification point 130A2 and the first direction verification point 130A3 is 12μm, which means there are three predetermined intervals between the deviation point 120 and the first direction verification point 130A3, and the interval between them is 36μm.

[0058] The interval between the deviation point 120 and the second direction verification point 130B1 is 12 μm; the interval between the second direction verification point 130B1 and the second direction verification point 130B2 is 12 μm, that is, there are two predetermined intervals between the deviation point 120 and the second direction verification point 130B2, and the interval between them is 24 μm; the interval between the second direction verification point 130B2 and the second direction verification point 130B3 is 12 μm, that is, there are three predetermined intervals between the deviation point 120 and the second direction verification point 130B3, and the interval between them is 36 μm.

[0059] The interval between the deviation point 120 and the third-direction verification points 130C1, 130C2, and 130C3, and the interval between the deviation point 120 and the fourth-direction verification points 130D1, 130D2, and 130D3 are also the same.

[0060] In this embodiment, the verification point 130 includes verification points in four directions: a first-direction verification point 130A located on the positive half-axis of the X-axis, a second-direction verification point 130B located on the positive half-axis of the Y-axis, a third-direction verification point 130C located on the negative half-axis of the X-axis, and a fourth-direction verification point 130D located on the negative half-axis of the Y-axis. In other embodiments of this application, the verification point 130 may also include verification points in fewer or more directions, for example, it may include verification points in three or five directions. For example, it may include verification points in three directions, wherein the first-direction verification point may be located on the positive half-axis of the X-axis; the second-direction verification point may be located between the positive half-axis of the Y-axis and the negative half-axis of the X-axis, for example, in a direction 30° off the positive half-axis of the Y-axis; and the third-direction verification point may be located between the negative half-axis of the X-axis and the negative half-axis of the Y-axis, for example, in a direction 60° off the negative half-axis of the Y-axis.

[0061] Next, the film thickness at the verification point 130 is measured using the laser. Here, the laser used to measure the verification point 130 is the same as the laser used to measure the measurement point 110, i.e., the spot size is 35μm*35μm. In some embodiments of this application, measurements can be taken sequentially along each direction.

[0062] For example, first, measure the first direction verification point 130 along the positive half-axis of the X-axis. Measurements are then taken from the point closer to the deviation point 120 away from it. If the film thickness at the first direction verification point 130 is within the average film thickness range, the measurement stops, indicating that the film thickness in that direction is acceptable. Otherwise, the measurement continues at the next first direction verification point 130 until the last first direction verification point 130, indicating that the film thickness in that direction is unacceptable. In some embodiments of this application, the flatness of the wafer 100 can be determined to be unacceptable.

[0063] For example, first measure the film thickness at the first direction verification point 130A1. If the film thickness is outside the range of the average film thickness, then measure the film thickness at the first direction verification point 130A2. If the film thickness is within the range of the average film thickness, then the measurement of the film thickness at the first direction verification point 130A is completed.

[0064] Next, the film thickness at the second direction verification point 130B1 is measured. If the film thickness is within the average film thickness range, the measurement of the film thickness at the second direction verification point 130B is completed.

[0065] Next, the film thickness at the third-party verification point 130C1 is measured. If the film thickness is outside the average film thickness range, the film thickness at the third-party verification point 130C2 is measured. If the film thickness is outside the average film thickness range, the film thickness at the third-party verification point 130C3 is measured. If the film thickness is outside the average film thickness range, the measurement of the third-party verification point 130C is completed.

[0066] In some embodiments of this application, if the film thickness of all the verification points 130 in this direction is outside the range of the average film thickness, the flatness of the wafer 100 can be determined to be unqualified, and the measurement of the film thickness of the verification points 130 is terminated, that is, the film thickness of the verification point 130D in the fourth direction is no longer measured. In other embodiments of this application, the wafer can be determined to be unqualified only if the film thickness of all the verification points in multiple directions is outside the range of the average film thickness. For example, the wafer can be determined to be unqualified only if the film thickness of all the verification points in two directions is outside the range of the average film thickness.

[0067] Next, the film thickness at the fourth direction verification point 130D1 is measured. If the film thickness is outside the average film thickness range, the film thickness at the fourth direction verification point 130D2 is measured. If the film thickness is outside the average film thickness range, the film thickness at the fourth direction verification point 130D3 is measured. If the film thickness is outside the average film thickness range, the measurement of the fourth direction verification point 130D is completed, and the flatness of the wafer 100 is determined to be unqualified.

[0068] In some embodiments of this application, if the first directional verification point 130A has a verification point 130 whose film thickness is within the range of the average film thickness, the second directional verification point 130B has a verification point 130 whose film thickness is within the range of the average film thickness, the third directional verification point 130C has a verification point 130 whose film thickness is within the range of the average film thickness, and the fourth directional verification point 130D has a verification point 130 whose film thickness is within the range of the average film thickness, then the flatness of the wafer 100 is determined to be qualified.

[0069] In some embodiments of this application, the region where the film thickness on the wafer 100 is outside the range of the average film thickness can also be obtained based on the film thickness of the verification point 130 in each direction.

[0070] like Figure 2 and Figure 3 As shown, for example, if the film thicknesses of the first direction verification point 130A2, the second direction verification point 130B2, the third direction verification point 130C3, and the fourth direction verification point 130D3 are within the average film thickness range, the flatness of the wafer 100 can be determined to be acceptable. In some embodiments of this application, the region where the film thickness on the wafer 100 is outside the average film thickness range can also be defined as a deviation region 140. This deviation region 140 is obtained by connecting the first direction verification point 130A2, the second direction verification point 130B2, the third direction verification point 130C3, and the fourth direction verification point 130D3. This also facilitates subsequent processing of the wafer 100, such as facilitating the setting and adjustment of subsequent processes.

[0071] In the semiconductor process film layer measurement method provided in this application embodiment, when the film layer thickness at measurement point 110 on wafer 100 is outside the range of the average film layer thickness, a verification point 130 is formed, and the film layer thickness at the verification point 130 is measured. Whether the wafer 100 is qualified is determined based on whether the film layer thickness at the verification point 130 is within the range of the average film layer thickness. This avoids the problem of misjudging the wafer surface flatness due to contaminants present at the measurement location, thus improving the reliability of semiconductor process film layer measurement.

[0072] Accordingly, this application also provides a semiconductor process film layer measurement device, please refer to... Figure 4 This is a schematic diagram of the semiconductor process film layer measurement device according to an embodiment of the present invention. Figure 4 As shown, the semiconductor process film layer measurement apparatus 200 includes: a detection device 210 and a control device 220 connected to the detection device 210. The detection device 210 is used to measure the film layer thickness at multiple measurement points and / or verification points on a wafer using a laser. The control device 220 is used to obtain an average film layer thickness range based on the film layer thickness at each measurement point measured by the detection device 210; determine whether the film layer thickness at each measurement point is within the average film layer thickness range; if the film layer thickness at a measurement point on the wafer is outside the average film layer thickness range, then the measurement point is a deviation point, and a verification point is formed and provided to the detection device 210, wherein there is one or more predetermined intervals between the verification point and the deviation point; and determine whether the wafer is qualified based on the film layer thickness at the measurement points and / or the verification points.

[0073] Please refer to the reference. Figures 1 to 4 In some embodiments of this application, the detection device 210 uses a laser to measure the film thickness at measurement points 110A, 110B, 110C, 110D, 110E, 110F, 110G, 110H, and 110I; and provides the obtained film thicknesses at measurement points 110A (a), 110B (b), 110C (c), 110D (d), 110E (e), 110F (f), 110G (g), 110H (h), and 110I (i) to the control device 220.

[0074] The control device 220 obtains the average film thickness av of all measurement points 110 on the wafer 100 using the film thicknesses a, b, c, d, e, f, g, h, and i. The range of the average film thickness can be obtained by adding and / or subtracting n times the standard deviation s from the average film thickness av, where n is a natural number.

[0075] The control device 220 determines whether the film thickness at each measurement point 110 on the wafer 100 is within the range of the average film thickness. If the film thickness at each measurement point 110 on the wafer 100 is within the range of the average film thickness, then the flatness of the wafer 100 is determined to be qualified.

[0076] If the film thickness at any measurement point 110 is outside the range of the average film thickness, the corresponding measurement point 110 is a deviation point 120. The control device 220 forms a verification point 130 and provides it to the detection device 210. There is one or more predetermined intervals between the verification point 130 and the deviation point 120. The predetermined interval is, for example, between 1 / 20 and 1 times the diameter of the laser spot.

[0077] The detection device 210 receives the verification points 130 provided by the control device 220 and measures the film thickness at the verification points 130. For example, the verification points 130 include verification points 130A1, 130A2, and 130A3 in the first direction; verification points 130B1, 130B2, and 130B3 in the second direction; verification points 130C1, 130C2, and 130C3 in the third direction; and verification points 130D1, 130D2, and 130D3 in the fourth direction. The control device 220 can sequentially provide the detection device 210 with the film thickness measured by the detection device 210 and determine whether the verification point 130 is within the average film thickness range. For example, the control device 220 first provides a first-direction verification point 130A1 to the detection device 210. After measuring the first-direction verification point 130A1, the detection device 210 provides the film thickness to the control device 220. If the film thickness of the first-direction verification point 130A1 is within the average film thickness range, the control device 220 first provides a second-direction verification point 130B1 to the detection device 210; if the film thickness of the first-direction verification point 130A1 is outside the average film thickness range, the control device 220 first provides a first-direction verification point 130A2 to the detection device 210, and so on. In this embodiment, the qualification of the wafer 110 can be determined by measuring the film thickness of the verification points 130 in four directions. This avoids the problem of misjudging the wafer surface flatness due to contaminants present at the measurement location, and improves the reliability of semiconductor process film measurement. Meanwhile, through the organic combination of the detection device 210 and the control device 220, the measurement of semiconductor process film layers can be realized quickly and reliably.

[0078] In this application, references to "one embodiment" or "some embodiments" mean that a feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment or at least some embodiments of this application. Therefore, the appearance of the phrases "in one embodiment" or "in some embodiments" throughout this application does not necessarily refer to the same or the same embodiments. Furthermore, in one or more embodiments, features, structures, or characteristics can be combined in any suitable combination and / or sub-combination.

[0079] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and not for limiting the scope of this application. The embodiments of this application can be combined in any way without departing from the spirit and scope of this application. Those skilled in the art should also understand that various modifications can be made to the embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. A method for measuring film layers in semiconductor processes, characterized in that, The semiconductor process film measurement method includes: Laser is used to measure the film thickness at multiple measurement points on a wafer, and the average film thickness range is obtained. Determine whether the film thickness at each measurement point on the wafer is within the range of the average film thickness; If the film thickness at each of the measurement points on the wafer is within the range of the average film thickness, then the wafer is deemed qualified. If the thickness of the film layer at the measurement point on the wafer is outside the range of the average thickness of the film layer, then the measurement point is a deviation point and forms a verification point. There is one or more predetermined intervals between the verification point and the deviation point. The film thickness at the verification point was measured using a laser; and, Determine whether the film thickness at the verification point is within the range of the average film thickness. If it is within the range of the average film thickness, then the wafer is deemed qualified.

2. The semiconductor process film measurement method as described in claim 1, characterized in that, The verification points include a first direction verification point, a second direction verification point, a third direction verification point, and a fourth direction verification point. A rectangular coordinate system is established with the deviation point as the origin. The first direction verification point is located on the positive half-axis of the X-axis, the second direction verification point is located on the positive half-axis of the Y-axis, the third direction verification point is located on the negative half-axis of the X-axis, and the fourth direction verification point is located on the negative half-axis of the Y-axis.

3. The semiconductor process film measurement method as described in claim 2, characterized in that, The number of the first direction verification point, the second direction verification point, the third direction verification point, and the fourth direction verification point are all multiple.

4. The semiconductor process film measurement method as described in claim 3, characterized in that, If the thickness of the film at one of the verification points in each direction is within the average thickness of the film, then the wafer is deemed qualified. If the film thickness of all the verification points in at least one direction is outside the range of the average film thickness, then the wafer is deemed unqualified.

5. The semiconductor process film measurement method as described in claim 4, characterized in that, The semiconductor process film measurement method further includes: The region outside the average thickness range of the film layer is obtained based on the film layer thickness at the verification point in each direction.

6. The semiconductor process film measurement method according to any one of claims 1 to 5, characterized in that, The predetermined interval distance is between 1 / 20 and 1 times the diameter of the laser spot.

7. The semiconductor process film layer measurement method according to any one of claims 1 to 5, characterized in that, The average thickness range of the film layer is obtained by adding and / or subtracting n times the standard deviation from the average thickness of the film layer at all measurement points on the wafer, where n is a natural number.

8. A semiconductor process film layer measurement device, characterized in that, The semiconductor process film measurement device includes: The detection device is used to measure the film thickness at multiple measurement points and / or verification points on a wafer using a laser; A control device is configured to: obtain an average film thickness range based on the film thickness at each measurement point measured by the detection device; determine whether the film thickness at each measurement point is within the average film thickness range; if the film thickness at a measurement point on the wafer is outside the average film thickness range, then the measurement point is a deviation point, and a verification point is formed and provided to the detection device, wherein there is one or more predetermined intervals between the verification point and the deviation point; and determine whether the wafer is qualified based on the film thickness at the measurement point and / or the verification point.

9. The semiconductor process film layer measurement apparatus as described in claim 8, characterized in that, The control device determines whether the wafer is qualified based on the film thickness at the measurement point and / or the verification point, including: Determine whether the film thickness at each of the measurement points on the wafer is within the range of the average film thickness. If the film thickness at each of the measurement points on the wafer is within the range of the average film thickness, then determine that the wafer is qualified; and / or, Determine whether the film thickness at the review point is within the range of the average film thickness. If it is within the range of the average film thickness, then determine that the wafer is qualified.

10. The semiconductor process film layer measurement apparatus as described in claim 8 or 9, characterized in that, The predetermined interval distance is between 1 / 20 times and 1 time of the spot diameter of the laser; the range of the average film thickness is obtained by adding and / or subtracting n times the standard deviation from the average film thickness of all the measurement points on the wafer, where n is a natural number.

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