Method for obtaining dynamic junction temperature of igbt device in three-phase inverter and related equipment

Abstract

The application provides an IGBT device dynamic junction temperature acquisition method and related equipment in a three-phase inverter, loss value of an IGBT device in a current switching cycle is acquired; the IGBT tube junction temperature in the current switching cycle is determined according to the loss value, the thermal impedance parameter corresponding to the IGBT tube and the IGBT tube junction temperature in the last switching cycle. Based on the loss value and the thermal impedance parameter corresponding to the IGBT tube, the possible change range of the IGBT tube junction temperature is determined, and then the IGBT tube junction temperature in the current switching cycle is determined in combination with the IGBT tube junction temperature in the last switching cycle, so that the accuracy of the IGBT tube junction temperature acquisition is ensured.

Description

Technical Field

[0001] This invention relates to the field of inverters, and more specifically, to a method and related equipment for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter. Background Technology

[0002] A three-phase inverter is a high-power power inverter device mainly used in uninterruptible power supply (UPS) applications. It converts direct current (DC) to three-phase alternating current (AC), making it suitable for three-phase load environments such as household appliances and industrial equipment. The core of a three-phase inverter consists of power electronic devices such as IGBTs. During operation, the IGBTs need to be controlled to switch between DC and AC, thus converting DC to AC.

[0003] During the operation of a three-phase inverter, the junction temperature of the IGBT device is a very important parameter. How to accurately obtain the junction temperature of the IGBT device has become a problem of concern to those skilled in the art. Summary of the Invention

[0004] The purpose of this invention is to provide a method and related equipment for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter, so as to improve the above-mentioned problems.

[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of the present invention are as follows:

[0006] In a first aspect, embodiments of the present invention provide a method for obtaining the dynamic junction temperature of an IGBT device in a three-phase inverter, wherein the IGBT device includes an IGBT transistor, and the method includes:

[0007] Obtain the loss value of the IGBT device during the current switching cycle;

[0008] The junction temperature of the IGBT in the current switching cycle is determined based on the loss value, the thermal resistance parameter corresponding to the IGBT, and the junction temperature of the IGBT in the previous switching cycle.

[0009] Secondly, embodiments of the present invention provide a storage medium having a computer program stored thereon, which, when executed by a processor, implements the above-described method.

[0010] Thirdly, embodiments of the present invention provide an electronic device, the electronic device comprising: a processor and a memory, the memory being used to store one or more programs; when the one or more programs are executed by the processor, the above-described method is implemented.

[0011] Compared to existing technologies, the present invention provides a method and related equipment for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter. This method obtains the loss value of the IGBT device during the current switching cycle; based on the loss value, the corresponding thermal impedance parameter of the IGBT, and the junction temperature of the IGBT in the previous switching cycle, it determines the junction temperature of the IGBT in the current switching cycle. By determining the possible variation range of the IGBT junction temperature based on the loss value and the corresponding thermal impedance parameter, and then combining this with the junction temperature of the IGBT in the previous switching cycle, the junction temperature of the IGBT in the current switching cycle is determined, thus ensuring the accuracy of the IGBT junction temperature acquisition.

[0012] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0013] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention.

[0015] Figure 2 This is one of the flowcharts illustrating the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter according to an embodiment of the present invention.

[0016] Figure 3 This is the second flowchart illustrating the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter according to an embodiment of the present invention.

[0017] Figure 4 This is the third flowchart illustrating the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter according to an embodiment of the present invention.

[0018] Figure 5 This is the fourth flowchart illustrating the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter, as provided in this embodiment of the invention.

[0019] Figure 6 This is the fifth flowchart illustrating the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter, as provided in this embodiment of the invention.

[0020] Figure 7 This is the sixth flowchart illustrating the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter according to an embodiment of the present invention.

[0021] Figure 8 This is the seventh flowchart illustrating the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter according to an embodiment of the present invention.

[0022] In the diagram: 10-Processor; 11-Memory; 12-Bus; 13-Communication interface. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0024] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0025] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this invention, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0026] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0027] In the description of this invention, it should be noted that the terms "upper," "lower," "inner," "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this invention is usually placed when in use. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0028] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0029] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0030] This invention provides an electronic device, which can be a control device in a three-phase inverter, or a terminal device interconnected with the control device in a three-phase inverter, such as a mobile phone, computer, or server. Please refer to... Figure 1 This is a schematic diagram of the structure of an electronic device. The electronic device includes a processor 10, a memory 11, and a bus 12. The processor 10 and the memory 11 are connected via the bus 12. The processor 10 is used to execute executable modules, such as computer programs, stored in the memory 11.

[0031] Processor 10 can be an integrated circuit chip with signal processing capabilities. In implementation, each step of the dynamic junction temperature acquisition method for IGBT devices in the three-phase inverter can be completed through integrated logic circuits in the hardware or instructions in the software form of processor 10. The aforementioned processor 10 can be a general-purpose processor, including a Central Processing Unit (CPU), a Network Processor (NP), etc.; it can also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field-Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0032] The memory 11 may include high-speed random access memory (RAM) and may also include non-volatile memory, such as at least one disk storage.

[0033] Bus 12 can be an ISA (Industry Standard Architecture) bus, a PCI (Peripheral Component Interconnect) bus, or an EISA (Extended Industry Standard Architecture) bus, etc. Figure 1 The symbol is represented by a single double-headed arrow, but this does not mean that there is only one bus 12 or one type of bus 12.

[0034] The memory 11 is used to store programs, such as the program corresponding to the dynamic junction temperature acquisition device for IGBT devices in a three-phase inverter. The dynamic junction temperature acquisition device for IGBT devices in a three-phase inverter includes at least one software function module that can be stored in the memory 11 in the form of software or firmware, or embedded in the operating system (OS) of the electronic device. After receiving an execution instruction, the processor 10 executes the program to implement the method for acquiring the dynamic junction temperature of IGBT devices in a three-phase inverter.

[0035] The electronic device provided in this embodiment of the invention may further include a communication interface 13. The communication interface 13 is connected to the processor 10 via a bus.

[0036] It should be understood that, Figure 1 The structure shown is only a partial schematic diagram of the electronic device; the electronic device may also include components that are larger than... Figure 1 The more or fewer components shown, or having the same Figure 1 The different configurations shown. Figure 1 The components shown can be implemented using hardware, software, or a combination thereof.

[0037] The present invention provides a method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter, which can be applied, but is not limited to, to... Figure 1 The electronic device shown is an IGBT device, which includes an IGBT transistor and a fast recovery diode (FRD) connected between the emitter and collector of the IGBT transistor. For detailed procedures, please refer to [reference needed]. Figure 2 The methods for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter include S21 and S22, which are described in detail below.

[0038] S21, obtain the loss value of the IGBT device in the current switching cycle.

[0039] The loss value of the IGBT device in the current switching cycle can be the sum of the conduction loss of the IGBT transistor in the current switching cycle, the switching loss of the IGBT transistor in the current switching cycle, the conduction loss of the fast recovery diode in the current switching cycle, and the reverse recovery loss of the fast recovery diode in the current switching cycle.

[0040] S22. Determine the IGBT junction temperature for the current switching cycle based on the loss value, the thermal resistance parameter of the IGBT, and the junction temperature of the IGBT in the previous switching cycle.

[0041] In this embodiment of the invention, the possible variation range of the IGBT junction temperature is determined based on the loss value and the thermal impedance parameter corresponding to the IGBT. Then, combined with the IGBT junction temperature in the previous switching cycle, the IGBT junction temperature in the current switching cycle is determined to ensure the accuracy of the IGBT junction temperature acquisition.

[0042] Optionally, the formula for calculating the IGBT junction temperature during the current switching cycle is:

[0043]

[0044] in, This indicates the junction temperature of the IGBT during the current switching cycle. Indicates the loss value. This indicates the thermal resistance parameter corresponding to the IGBT transistor. This indicates the junction temperature of the IGBT transistor during the previous switching cycle.

[0045] Building upon the preceding text, this invention also provides an optional implementation method for obtaining the thermal resistance parameters of an IGBT transistor. Please refer to [link / reference needed]. Figure 3 The methods for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter also include: S11, S12, S13 and S14, which are described in detail below.

[0046] S11. Add the chip size information of the IGBT to the thermal simulation model, and perform simulation modeling of the IGBT in the IGBT device to obtain the IGBT simulation unit.

[0047] The thermal simulation model can be, but is not limited to, ANSYS Icepak.

[0048] S12. Input the thermal conductivity coefficient of the IGBT tube simulation unit and the transient thermal resistance of the IGBT tube at the current stage into the thermal simulation model, run the thermal simulation model, and perform multiple finite element simulations to obtain the thermal response curve of the IGBT tube.

[0049] S13. The least squares method is used to fit the thermal response curve of the IGBT tube obtained from each finite element simulation to obtain the corresponding transient thermal resistance curve of the IGBT tube.

[0050] The transient thermal impedance curve of the IGBT includes the fitted thermal resistance and fitted thermal capacity of the IGBT when the IGBT device reaches equilibrium.

[0051] Optionally, the formula for the transient thermal resistance curve of the IGBT is:

[0052]

[0053] in, This indicates the transient thermal resistance of the IGBT when the IGBT device reaches equilibrium. This represents the fitted thermal resistance in the transient thermal resistance curve of the i-th IGBT. This represents the fitted heat capacity in the transient thermal resistance curve of the i-th IGBT. express and The product of t represents the thermal time constant of the IGBT, which is the time required for the IGBT to reach thermal equilibrium. t represents the conduction time of the IGBT device, which can be understood as the heating time.

[0054] S14, construct the IGBT thermal impedance matrix to obtain thermal impedance parameters that match the IGBT thermal impedance matrix (as the thermal impedance parameters corresponding to the IGBT at the current stage).

[0055] The IGBT thermal impedance matrix includes the fitted thermal resistance and fitted thermal capacity from the transient thermal impedance curves of each IGBT.

[0056] It should be understood that the thermal impedance parameters that match the thermal impedance matrix of the IGBT tube are obtained and used as the thermal impedance parameters corresponding to the IGBT tube at the current stage.

[0057] Building upon the preceding text, this invention provides an optional implementation method to ensure the accuracy of the thermal impedance parameters of the IGBT transistor at the current stage, thereby ensuring the accuracy of the junction temperature acquisition. Please refer to [link / reference needed]. Figure 4 After determining the junction temperature of the IGBT in the current switching cycle, the method for obtaining the dynamic junction temperature of the IGBT device in the three-phase inverter also includes S23 and S24, which are described in detail below.

[0058] S23: Determine whether the change in IGBT junction temperature between the current switching cycle and the first simulated junction temperature exceeds a first amplitude threshold. If yes, proceed to S24; otherwise, wait for the next switching cycle and repeat S21.

[0059] The first simulated junction temperature is the junction temperature of the IGBT tube when the thermal impedance parameters of the IGBT tube are obtained in the simulation at the current stage. The first amplitude threshold can be, but is not limited to, 10℃.

[0060] It should be understood that when the first amplitude threshold is exceeded, it indicates that the junction temperature of the IGBT tube has changed significantly, and it is necessary to re-acquire the thermal resistance parameters of the IGBT tube at the current stage. At this time, S24 is executed.

[0061] S24, take the latest obtained transient thermal resistance of the IGBT tube as the new transient thermal resistance of the IGBT tube for the current stage.

[0062] After S24 is executed, repeat S12, S13 and S14 above. Input the thermal conductivity coefficient corresponding to the IGBT tube simulation unit and the transient thermal resistance of the IGBT tube at the current stage into the thermal simulation model, run the thermal simulation model, and perform multiple finite element simulations to obtain the thermal response curve of the IGBT tube. Then obtain the thermal impedance parameters that match the thermal impedance matrix of the IGBT tube, that is, obtain the new thermal impedance parameters of the IGBT tube.

[0063] After obtaining the new IGBT thermal resistance parameters, wait for the next switching cycle and repeat S21.

[0064] Building upon the preceding text, this invention also provides an optional implementation method for controlling the switching state transitions of IGBT devices in a three-phase inverter. Please refer to [link / reference]. Figure 5 The methods for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter also include: S31, S32 and S33, which are described in detail below.

[0065] S31. Based on the thermal impedance matrix of the FRD tube and the thermal impedance matrix of the IGBT tube, construct the RC network thermal model of the IGBT device.

[0066] The thermal resistance matrix of the FRD tube can be preset or obtained in accordance with the methods described in S15-S18 below.

[0067] S32 interconnects the RC network thermal model with the target simulation circuit to obtain the electrothermal model of the IGBT device.

[0068] The target simulation circuit is a pre-built simulation circuit for applying IGBT devices to a three-phase inverter.

[0069] S33 uses an electrothermal model to control the switching state of IGBT devices in a three-phase inverter.

[0070] Optionally, based on an electrothermal model, the switching state of the IGBT device can be switched by adjusting the switching parameters. The junction temperature of the IGBT device is used as a key control variable to dynamically adjust the switching behavior.

[0071] The IGBT device also includes a fast recovery diode connected between the emitter and collector of the IGBT. Regarding how to obtain the junction temperature of the fast recovery diode, this embodiment of the invention also provides an optional implementation method; please refer to [reference needed]. Figure 6 The method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter also includes: S25, as detailed below.

[0072] S25. Determine the junction temperature of the fast recovery diode in the current switching cycle based on the loss value, the thermal impedance parameter corresponding to the fast recovery diode, and the junction temperature of the fast recovery diode in the previous switching cycle.

[0073] Optionally, the formula for the fast recovery diode junction temperature in the current switching cycle is:

[0074]

[0075] in, This indicates the fast recovery diode junction temperature during the current switching cycle. Indicates the loss value. This indicates the thermal impedance parameter corresponding to the fast recovery diode. This indicates the junction temperature of the fast recovery diode during the previous switching cycle.

[0076] Building upon the preceding text, this invention also provides an optional implementation method for obtaining the thermal impedance parameters of a fast recovery diode. Please refer to [link / reference needed]. Figure 7The methods for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter also include: S15, S16, S17 and S18, which are described in detail below.

[0077] S15, add the chip size information of the fast recovery diode to the thermal simulation model, and perform simulation modeling of the fast recovery diode in the IGBT device to obtain the FRD tube simulation unit;

[0078] S16. Input the thermal conductivity coefficient corresponding to the FRD tube simulation unit and the transient thermal resistance of the FRD tube at the current stage into the thermal simulation model, run the thermal simulation model, and perform multiple finite element simulations to obtain the thermal response curve of the FRD tube.

[0079] S17. The least squares method is used to fit the thermal response curve of the FRD tube obtained from each finite element simulation to obtain the corresponding transient thermal impedance curve of the FRD tube.

[0080] The transient thermal impedance curve of the FRD diode includes the fitted thermal resistance and fitted thermal capacity of the fast recovery diode when the IGBT device reaches equilibrium.

[0081] Optionally, the formula for the transient thermal resistance curve of the FRD tube is:

[0082]

[0083] in, This indicates the transient thermal resistance of the FRD transistor when the IGBT device reaches equilibrium. This represents the fitted thermal resistance in the transient thermal resistance curve of the i-th FRD tube. This represents the fitted heat capacity in the transient thermal resistance curve of the i-th FRD tube. express and The product of t represents the thermal time constant of the FRD tube, which is the time required for the FRD tube to reach thermal equilibrium. t represents the conduction time of the IGBT device, which can be understood as the heating time.

[0084] S17, construct the FRD tube thermal impedance matrix to obtain thermal impedance parameters that match the FRD tube thermal impedance matrix.

[0085] The FRD tube thermal impedance matrix includes the fitted thermal resistance and fitted thermal capacity from the transient thermal impedance curves of each FRD tube. Thermal impedance parameters matching the FRD tube thermal impedance matrix are obtained and used as the corresponding thermal impedance parameters for the FRD tube at the current stage.

[0086] Building upon the preceding text, this invention provides an optional implementation method to ensure the accuracy of the thermal impedance parameters corresponding to the FRD tube at the current stage, thereby ensuring the accuracy of the junction temperature acquisition. Please refer to [link / reference needed]. Figure 8 After determining the junction temperature of the fast recovery diode in the current switching cycle, the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter also includes S26 and S27, which are described in detail below.

[0087] S26: Determine whether the change in junction temperature between the fast recovery diode and the second simulated junction temperature during the current switching cycle exceeds the second amplitude threshold. If yes, proceed to S27; otherwise, wait for the next switching cycle and repeat S21.

[0088] The second simulated junction temperature is the junction temperature of the fast recovery diode when the thermal impedance parameters of the fast recovery diode are obtained in the simulation at the current stage. The second amplitude threshold can be, but is not limited to, 10℃.

[0089] It should be understood that when the second amplitude threshold is exceeded, it indicates that the junction temperature of the fast recovery diode has changed significantly, and it is necessary to re-acquire the thermal impedance parameters corresponding to the fast recovery diode at the current stage. At this time, S27 is executed.

[0090] S27, the newly acquired transient thermal resistance of the FRD tube is used as the new transient thermal resistance of the FRD tube for the current stage.

[0091] After S24 is executed, repeat S16, S17 and S18 above. Input the thermal conductivity coefficient corresponding to the FRD tube simulation unit and the transient thermal resistance of the FRD tube at the current stage into the thermal simulation model, run the thermal simulation model, and perform multiple finite element simulations to obtain the thermal response curve of the FRD tube, and then obtain the thermal impedance parameters that match the thermal impedance matrix of the FRD tube, that is, obtain the new thermal impedance parameters of the FRD tube.

[0092] After obtaining the new thermal resistance parameters of the FRD tube, wait for the next switching cycle and repeat S21.

[0093] This invention also provides a storage medium storing computer instructions and programs. When read and executed, these instructions and programs perform the dynamic junction temperature acquisition method for IGBT devices in the three-phase inverter described above. The storage medium may include memory, flash memory, registers, or a combination thereof.

[0094] The following provides an electronic device, which can be a control device in a three-phase inverter, or a terminal device interconnected with a control device in a three-phase inverter, such as a mobile phone, computer, or server. This electronic device... Figure 1As shown, the above-described method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter can be implemented. Specifically, the electronic device includes: a processor 10, a memory 11, and a bus 12. The processor 10 can be a CPU. The memory 11 is used to store one or more programs. When one or more programs are executed by the processor 10, the method for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter as described in the above embodiment is executed.

[0095] In summary, the present invention provides a method and related equipment for obtaining the dynamic junction temperature of IGBT devices in a three-phase inverter. This method obtains the loss value of the IGBT device during the current switching cycle; based on the loss value, the corresponding thermal impedance parameter of the IGBT, and the junction temperature of the IGBT in the previous switching cycle, it determines the junction temperature of the IGBT in the current switching cycle. By determining the possible variation range of the IGBT junction temperature based on the loss value and the corresponding thermal impedance parameter, and then combining this with the junction temperature of the IGBT in the previous switching cycle, the junction temperature of the IGBT in the current switching cycle is determined, thus ensuring the accuracy of the IGBT junction temperature acquisition.

[0096] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

[0097] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A method for obtaining dynamic junction temperature of IGBT devices in a three-phase inverter, characterized in that, The IGBT device comprises an IGBT tube, and the method comprises: obtaining a loss value of the IGBT device in a current switching period; determining the junction temperature of the IGBT tube in the current switching period according to the loss value, a thermal impedance parameter corresponding to the IGBT tube, and the junction temperature of the IGBT tube in a previous switching period; The method further comprises adding the chip size information of the IGBT tube in the thermal simulation model, and performing simulation modeling on the IGBT tube in the IGBT device to obtain an IGBT tube simulation unit; inputting the thermal conductivity coefficient corresponding to the IGBT tube simulation unit and the IGBT tube transient thermal resistance in the current stage into the thermal simulation model, running the thermal simulation model, and performing multiple finite element simulations to obtain an IGBT tube thermal response curve; performing least square fitting on the IGBT tube thermal response curve obtained in each finite element simulation to obtain a corresponding IGBT tube transient thermal impedance curve, wherein the IGBT tube transient thermal impedance curve comprises a fitted thermal resistance and a fitted thermal capacity corresponding to the IGBT tube when the IGBT device reaches an equilibrium state; constructing an IGBT tube thermal impedance matrix to obtain a thermal impedance parameter matched with the IGBT tube thermal impedance matrix, wherein the IGBT tube thermal impedance matrix comprises the fitted thermal resistance and the fitted thermal capacity in each IGBT tube transient thermal impedance curve; After determining the junction temperature of the IGBT tube in the current switching period, the method further comprises: determining whether the change amplitude between the junction temperature of the IGBT tube in the current switching period and a first simulation junction temperature exceeds a first amplitude threshold, wherein the first simulation junction temperature is the junction temperature of the IGBT tube when the thermal impedance parameter corresponding to the IGBT tube in the current stage is obtained through simulation; if the first amplitude threshold is exceeded, the latest obtained IGBT tube transient thermal resistance is taken as a new IGBT tube transient thermal resistance in the current stage, and the inputting of the thermal conductivity coefficient corresponding to the IGBT tube simulation unit and the IGBT tube transient thermal resistance in the current stage into the thermal simulation model, the running of the thermal simulation model, and the performing of multiple finite element simulations to obtain the IGBT tube thermal response curve are repeated, and then the thermal impedance parameter matched with the IGBT tube thermal impedance matrix is obtained.

2. The method of claim 1, wherein the IGBT device dynamic junction temperature is obtained in a three-phase inverter, and the method further comprises: The formula of the junction temperature of the IGBT tube in the current switching period is: wherein, represents the IGBT junction temperature of the current switching cycle, represents the loss value, represents the thermal impedance parameter of the IGBT, represents the IGBT junction temperature of the previous switching cycle.

3. The method of claim 1, wherein the IGBT device dynamic junction temperature is obtained in a three-phase inverter, and the method further comprises: The method further comprises: building an RC network thermal model of the IGBT device according to the FRD tube thermal impedance matrix and the IGBT tube thermal impedance matrix; interconnecting the RC network thermal model and a target simulation circuit to obtain an electro-thermal model of the IGBT device, wherein the target simulation circuit is a simulation circuit of the IGBT device applied to a three-phase inverter and built in advance; controlling the switching state switching of the IGBT device in the three-phase inverter by using the electro-thermal model.

4. The method of claim 1-3, wherein, The IGBT device further comprises a fast recovery diode connected to the emitter and the collector of the IGBT tube, and the method further comprises: determining the junction temperature of the fast recovery diode in the current switching period according to the loss value, a thermal impedance parameter corresponding to the fast recovery diode, and the junction temperature of the fast recovery diode in the previous switching period.

5. The method of claim 4, wherein the method further comprises: The method further comprises: Chip size information of the fast recovery diode is added in the thermal simulation model, and the fast recovery diode in the IGBT device is simulated and modeled to obtain an FRD tube simulation unit; The thermal conductance coefficient corresponding to the FRD tube simulation unit and the FRD tube transient thermal resistance of the current stage are input into the thermal simulation model, the thermal simulation model is run, and multiple finite element simulations are performed to obtain an FRD tube thermal response curve; The FRD tube thermal response curve obtained by each finite element simulation is fitted by the least square method to obtain a corresponding FRD tube transient thermal resistance curve, and the FRD tube transient thermal resistance curve includes a fitted thermal resistance and a fitted thermal capacity corresponding to the fast recovery diode when the IGBT device reaches an equilibrium state; An FRD tube thermal resistance matrix is constructed to obtain thermal resistance parameters matched with the FRD tube thermal resistance matrix, and the FRD tube thermal resistance matrix includes the fitted thermal resistance and the fitted thermal capacity in each FRD tube transient thermal resistance curve.

6. The method of claim 5, wherein the dynamic junction temperature of the IGBT device in the three-phase inverter is obtained by, After determining the junction temperature of the fast recovery diode of the current switching period, the method further comprises: determining whether the change amplitude between the junction temperature of the fast recovery diode of the current switching period and a second simulation junction temperature exceeds a second amplitude threshold; wherein the second simulation junction temperature is the junction temperature of the fast recovery diode when the thermal resistance parameters corresponding to the fast recovery diode of the current stage are obtained by simulation; If the second amplitude threshold is exceeded, the latest obtained FRD tube transient thermal resistance is taken as the new FRD tube transient thermal resistance of the current stage, and the thermal conductance coefficient corresponding to the FRD tube simulation unit and the FRD tube transient thermal resistance of the current stage are input into the thermal simulation model, the thermal simulation model is run, and multiple finite element simulations are performed to obtain an FRD tube thermal response curve, and then thermal resistance parameters matched with the FRD tube thermal resistance matrix are obtained.

7. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by a processor to implement the method of any one of claims 1-6.

8. An electronic device, comprising: Comprise: a processor and a memory for storing one or more programs; when the one or more programs are executed by the processor, the method of any one of claims 1-6 is implemented.

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