Dynamic power allocation method for a semiconductor epilating device based on spectral analysis
By analyzing laser emission and reflection curves, calculating absorption characteristic index and skin sensitivity index, and dynamically adjusting laser power, the problem of mismatch between power adjustment and skin condition in semiconductor hair removal devices is solved, thus improving hair removal effect and safety.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHENGZHOU PINZHENG TECH CO LTD
- Filing Date
- 2025-10-14
- Publication Date
- 2026-07-14
AI Technical Summary
Existing semiconductor hair removal devices fail to fully consider the actual skin conditions when adjusting laser power, resulting in a mismatch between power adjustment and skin condition, which affects the hair removal effect.
By collecting laser emission and reflection curves, calculating the absorption characteristic index, dividing the region into high and low absorption areas, and combining skin characteristic values and sensitivity index, the power of the laser emission area is dynamically adjusted to avoid excessive damage to the skin.
It enables precise adjustment of laser power based on the actual skin condition, improving hair removal results, avoiding damage to normal skin areas, and enhancing the safety and efficiency of hair removal equipment.
Smart Images
Figure CN121196718B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of biometric recognition technology, specifically to a dynamic power allocation method for semiconductor hair removal devices based on spectral analysis. Background Technology
[0002] Semiconductor hair removal devices utilize semiconductor lasers to achieve hair removal. Based on the theory of selective photothermolysis, they use lasers of specific wavelengths to carry energy that penetrates the skin's surface and precisely targets the hair follicles beneath the skin. The heat energy carried by the laser destroys the hair follicle tissue, thus achieving permanent hair removal. To achieve better hair removal results, the power within the laser emission area of the semiconductor hair removal device needs to be dynamically adjusted according to the skin condition. Because melanin in the skin increases the absorption rate of laser light, resulting in less damage to the hair follicles and reduced final hair removal effectiveness, the power within the light emission area is typically adjusted based on skin tone information collected by a color sensor.
[0003] However, laser energy may be absorbed by hemoglobin in blood vessels, and excessive laser energy may damage blood vessels. Therefore, when adjusting the laser power of a hair removal device, it is also necessary to consider the distribution of subcutaneous blood vessels and the deposition of subcutaneous melanin, and adjust the laser power according to the actual condition of the skin to avoid deviation between the power adjustment and the actual needs of the skin condition, thus ensuring the hair removal effect. Summary of the Invention
[0004] This application provides a dynamic power allocation method for semiconductor hair removal devices based on spectral analysis to solve the problem that the power adjustment of the light emission area of the semiconductor hair removal device ignores the actual skin conditions, resulting in a mismatch between the power adjustment and the actual needs of the skin condition, leading to poor hair removal results. The specific technical solution adopted is as follows:
[0005] One embodiment of this application provides a dynamic power allocation method for a semiconductor hair removal device based on spectral analysis, the method comprising the following steps:
[0006] Collect the laser emission curves and laser reflection curves of all areas within the laser emission area of the semiconductor hair removal device at the same acquisition time, and calculate the emitted and reflected laser energy values based on the laser emission curves and laser reflection curves respectively;
[0007] Based on the difference in laser energy values emitted and reflected in the same acquisition time, the absorption characteristic index of the area at the same acquisition time is calculated, and the high absorption area and low absorption area at the acquisition time are divided according to the absorption characteristic index.
[0008] Based on the location distribution of all high-absorbency regions within the laser emission area at the same acquisition time, and the number of high-absorbency and low-absorbency patches contained in the laser emission area at the same acquisition time, the skin characteristic value of the laser emission area at the same acquisition time is calculated. Combined with the adjacency of high-absorbency regions, the skin sensitivity index of the laser emission area at the same acquisition time is determined.
[0009] Based on the duration of hair removal treatment on the laser emission area by the semiconductor hair removal device up to the acquisition time, and the skin sensitivity index of the laser emission area at the acquisition time, the operating power of the semiconductor hair removal device at the next adjacent acquisition time is determined, thereby realizing dynamic power allocation of the semiconductor hair removal device.
[0010] Furthermore, the emitted and reflected laser energy values are the integral values of the laser emission curve and the laser reflection curve, respectively.
[0011] Furthermore, the specific method for obtaining the absorption characteristic index is as follows:
[0012] The difference between the emitted and reflected laser energy values of the area at the same acquisition time is recorded as the attenuation energy of the area at the same acquisition time.
[0013] The ratio of the attenuation energy of the region to the emitted laser energy at the same acquisition time is denoted as the absorption characteristic index of the region at the same acquisition time.
[0014] Furthermore, the specific method for dividing the high-absorption region and the low-absorption patch is as follows:
[0015] The absorption characteristic threshold is determined based on the absorption characteristic index of all areas within the laser emission region at the same acquisition time.
[0016] Regions with an absorption characteristic index greater than the absorption characteristic threshold are marked as high-absorbency regions at the same acquisition time, and regions with an absorption characteristic index less than or equal to the absorption characteristic threshold are marked as low-absorbency regions at the same acquisition time.
[0017] Furthermore, the specific method for determining the skin feature values is as follows:
[0018] The average number of direct connections of the laser emission region at the same acquisition time is determined based on all adjacent high-absorption regions within the laser emission region at the same acquisition time.
[0019] The skin characteristic value of the laser emission area at the same acquisition time is determined based on the number of high-absorbency regions and low-absorbency patches contained in the laser emission area at the same acquisition time, and the average number of direct connections of the laser emission area at the same acquisition time.
[0020] Furthermore, the method for obtaining the average number of direct connections is as follows:
[0021] The number of high-absorbency regions within the laser emission region at the same acquisition time, and the number of high-absorbency regions adjacent to high-absorbency regions, is recorded as the number of direct connections of high-absorbency regions.
[0022] The average number of direct connections in all high-absorptivity regions within the laser emission region at the same acquisition time is denoted as the average number of direct connections in the laser emission region at the same acquisition time.
[0023] Furthermore, the specific method for determining the skin feature values of the laser emission area at the same acquisition time is as follows:
[0024] The ratio of the number of high-absorbency regions to the number of low-absorbency patches contained in the laser emission region at the same acquisition time is denoted as the first ratio of the laser emission region at the same acquisition time.
[0025] The positive correlation between the first ratio of the laser emission area at the acquisition time and the average number of direct connections is recorded as the skin feature value of the laser emission area at the same acquisition time.
[0026] Furthermore, the specific method for obtaining the skin sensitivity index is as follows:
[0027] Based on the adjacency of high-absorption regions, the reflection similarity and concentration of high-absorption concentrated regions determined by the laser emission region are obtained respectively;
[0028] The positive correlation between the skin feature values of the laser emission area at the same acquisition time, the reflection similarity of the high-absorption concentration area determined by the laser emission area, and the concentration number is recorded as the skin sensitivity index of the laser emission area at the same acquisition time.
[0029] Furthermore, the specific method for determining the reflection similarity and concentration quantity of the high-absorption concentrated region is as follows:
[0030] Obtain the connected regions formed by the high absorptivity regions. The connected region containing the most high absorptivity regions is denoted as the high absorptivity concentration region. The average similarity of the laser reflection curves of all different high absorptivity regions within the high absorptivity concentration region is denoted as the reflection similarity of the high absorptivity concentration region.
[0031] The number of high-absorbency regions contained within a high-absorbency concentration region is denoted as the concentration number of high-absorbency concentration regions.
[0032] Furthermore, the formula for calculating the operating power of the semiconductor hair removal device at the next adjacent acquisition time is:
[0033]
[0034] In the formula, Indicates the first The operating power of the semiconductor hair removal device at each acquisition moment; the semiconductor hair removal device until the... The negative of the duration of laser hair removal treatment on the laser emission area at the first acquisition time is used as the exponent of an exponential function with a natural constant as the base. The calculated value of the exponential function is denoted as the i-th... The time decay coefficient at each acquisition time. Indicates the first Time decay coefficient at each acquisition moment; Indicates the laser emission region in the... Skin sensitivity index at each sampling time; Indicates the preset minimum power; Indicates the first The operating power of the semiconductor hair removal device at each acquisition moment.
[0035] The beneficial effects of this application are:
[0036] This application first assesses the laser energy attenuation of a region based on the difference in emitted and reflected laser energy values at the same acquisition time, obtaining the absorption characteristic index of the region. Based on the absorption characteristic index, it divides the region into high-absorbency areas and low-absorbency areas at the acquisition time. High-absorbency areas likely correspond to areas with melanin deposition or rich subcutaneous blood vessels, while low-absorbency areas correspond to normal skin areas. To avoid normal skin areas being identified as areas with melanin deposition or rich subcutaneous blood vessels, further analysis is performed based on the concentration of the spatial distribution of high-absorbency areas. Skin characteristic values of the laser emission area at the acquisition time are calculated. The more concentrated the distribution of areas potentially corresponding to melanin deposition or rich subcutaneous blood vessels within the laser emission area, the higher the skin characteristic value of the laser emission area. Considering the different distributions and developmental stages of different hair follicles within the laser emission area, while the distributions and developmental stages of different hair follicles are similar in areas with darker skin due to melanin deposition or vascular distribution, the laser emission area is further analyzed. Further analysis of the laser absorption in the most concentrated high-absorption areas within the laser emission region was conducted to determine the skin sensitivity index of the laser emission area at the acquisition time. A higher skin sensitivity index indicates that more laser energy is absorbed by melanin deposits or subcutaneous blood vessels in the laser emission area, increasing the likelihood of skin discomfort and requiring a lower power for hair removal. Finally, based on the skin sensitivity index and the analysis of the gradual increase in laser absorption efficiency and heat accumulation in hair follicles, the working power of the semiconductor hair removal device was determined for the next adjacent acquisition time to avoid excessive adjustments between adjacent acquisition times. The working power of the laser emission area with darker skin or more blood vessels was adaptively reduced, achieving dynamic power allocation for the semiconductor hair removal device. This addresses the problem of power adjustments failing to consider actual skin conditions during the adjustment of the light emission area, leading to a mismatch between power adjustments and actual skin needs, thus improving hair removal effectiveness. Attached Figure Description
[0037] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0038] Figure 1 This is a schematic diagram of a dynamic power allocation method for a semiconductor hair removal device based on spectral analysis, provided in one embodiment of this application. Detailed Implementation
[0039] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0040] Please see Figure 1 The diagram illustrates a flowchart of a dynamic power allocation method for a semiconductor hair removal device based on spectral analysis, according to an embodiment of this application. The method includes the following steps:
[0041] Step S001: Collect the laser emission curves and laser reflection curves of all areas within the laser emission area of the semiconductor hair removal device at the same acquisition time, and calculate the emitted and reflected laser energy values based on the laser emission curves and laser reflection curves respectively.
[0042] When the energy carried by the specific wavelength laser emitted by the semiconductor hair removal device is largely absorbed by the hair follicle, the structure and function of the hair follicle are destroyed, and the hair follicle and its stem cells lose their activity, thus achieving hair removal. During the power adjustment process of the light emission area of the semiconductor hair removal device, the power of the light emission area is adjusted by changing the laser pulse width. A wider pulse width results in greater energy carried by the laser. Simultaneously, the laser in the light emission area of the semiconductor hair removal device is repeatedly emitted at a fixed frequency; based on the hair removal device manual, the preferred pulse repetition frequency is 1-10Hz.
[0043] The semiconductor laser hair removal device selected in this embodiment is a medical semiconductor laser hair removal device. This device consists of a main unit, a treatment handpiece, a power cord, and auxiliary accessories. It is suitable for hair on various parts of the body, such as cheek hair, lip hair, beard, underarm hair, back hair, chest hair, armpit hair, bikini line hair, and leg hair, but does not include hair on eyebrows, eyelashes, or other thin skin areas around the eyes. The medical semiconductor laser hair removal device selected in this embodiment has two laser emission area sizes, namely... , By connecting the medical semiconductor laser hair removal device to different treatment handles, the size of the laser emission area can be adjusted. In this embodiment, the laser wavelength range of the medical semiconductor laser hair removal device is [range missing]. The energy density of the laser emission region ranges from 2 to 95 joules per square centimeter.
[0044] The laser emission curves of all areas within the laser emission area collected by the semiconductor hair removal device are extracted. The laser reflection curves of all areas within the laser emission area are also collected using the semiconductor hair removal device. The laser emission curves and laser reflection curves are integrated respectively to obtain the emitted laser energy value and reflected laser energy value of each area.
[0045] Preferably, as an embodiment of this application, when collecting the laser reflection curve of the area, the collection is performed every 10 seconds, and the collection time is 1 second. The horizontal axis of the laser reflection curve is time, and the vertical axis is the energy intensity of the reflection.
[0046] A skin spectral analysis module is set up in the semiconductor hair removal device. The laser reflection curves of all areas in the laser emission area collected at the acquisition time are input into the skin spectral analysis module. By analyzing the laser reflection curves of all areas in the laser emission area through the skin spectral analysis module, the actual skin condition in the laser emission area can be evaluated. The skin spectral analysis module can obtain and output the power of the semiconductor hair removal device at the next adjacent acquisition time.
[0047] The analysis process of the laser emission region is shown in steps S002-S004.
[0048] At this point, the laser energy values emitted and reflected by all areas within the laser emission area of the semiconductor hair removal device at the same acquisition time are obtained.
[0049] Step S002: Based on the difference in laser energy values emitted and reflected by the area at the same acquisition time, calculate the absorption characteristic index of the area at the same acquisition time, and divide the area into high absorption region and low absorption region at the acquisition time according to the absorption characteristic index.
[0050] The laser reflection curves of different areas within the same laser emission area at the same acquisition time should be similar. After being absorbed by blood vessels, melanin or hemoglobin in the skin, there will be a certain energy attenuation. When the skin conditions of different areas are similar, the laser attenuation in different areas will also be similar.
[0051] The absorption characteristic index of the region at the same acquisition time is calculated based on the difference in the emitted and reflected laser energy values of the region at the same acquisition time.
[0052] The difference between the emitted and reflected laser energy values of the area at the same acquisition time is recorded as the attenuation energy of the area at the same acquisition time, and the ratio of the attenuation energy of the area to the emitted laser energy value at the same acquisition time is recorded as the absorption characteristic index of the area at the same acquisition time.
[0053] It's understandable that the emitted laser energy is reflected after passing through skin tissue, and the reflected laser energy is always less than the emitted laser energy. This reduction in laser energy is the energy absorbed by the skin. The absorption characteristic index of a patch is used to evaluate the attenuation of laser energy caused by the actual skin condition at the patch location. When the skin beneath the patch is normal epidermal tissue with little melanin, the skin absorbs less energy, and in this case, the absorption characteristic index of the patch is relatively high. Conversely, when the epidermal tissue beneath the patch contains hair follicles, has a darker skin tone, or has abundant capillaries, the skin absorbs more energy, and in this case, the absorption characteristic index of the patch is relatively low.
[0054] The high-absorbency region and low-absorbency area were divided according to the absorption characteristic index at the time of collection.
[0055] Preferably, as an embodiment of this application, the absorption characteristic index of all regions within the laser emission region at the same acquisition time is adaptively divided to obtain an absorption characteristic threshold. Regions with an absorption characteristic index greater than the absorption characteristic threshold are marked as high-absorbency regions at the same acquisition time, and regions with an absorption characteristic index less than or equal to the absorption characteristic threshold are marked as low-absorbency regions at the same acquisition time.
[0056] It is understandable that areas with high absorption rates likely correspond to areas of skin with melanin deposits or abundant subcutaneous blood vessels, while areas with low absorption rates correspond to normal skin areas.
[0057] In this embodiment, the maximum inter-class variance method is used for adaptive partitioning to obtain the absorption characteristic threshold. The adaptive partitioning method for obtaining the absorption characteristic threshold is a well-known technique and will not be described in detail here.
[0058] At this point, the high-absorbency region and low-absorbency area at the time of acquisition are obtained.
[0059] Step S003: Based on the location distribution of all high-absorbency regions within the laser emission area at the same acquisition time, and the number of high-absorbency regions and low-absorbency patches contained in the laser emission area at the same acquisition time, calculate the skin characteristic value of the laser emission area at the same acquisition time, and determine the skin sensitivity index of the laser emission area at the same acquisition time by combining the adjacent situation of high-absorbency regions.
[0060] It is important to note that even when there are no areas of melanin deposition or rich subcutaneous blood vessels in the skin areas corresponding to all areas within the laser emission area, high absorption areas will still be identified. In order to avoid normal skin areas being identified as areas with melanin deposition or rich subcutaneous blood vessels, it is necessary to analyze the spatial distribution of high absorption areas.
[0061] When the skin corresponding to the high-absorption area is normal skin, the hair follicles are scattered and randomly distributed, and the high-absorption areas should also be randomly distributed. However, when the skin corresponding to the high-absorption area is a skin area with melanin deposition or rich subcutaneous blood vessels, the high-absorption areas should be concentrated in a specific area.
[0062] For all high-absorbency regions within the laser emission area at the same acquisition time, the number of high-absorbency regions adjacent to each other is recorded as the number of direct connections of the high-absorbency regions. The average number of direct connections of all high-absorbency regions within the laser emission area at the same acquisition time is recorded as the average number of direct connections of the laser emission area at the same acquisition time.
[0063] The ratio of the number of high-absorbency regions to the number of low-absorbency patches contained in the laser emission region at the same acquisition time is denoted as the first ratio of the laser emission region at the same acquisition time. The positive correlation result between the first ratio of the laser emission region at the acquisition time and the average number of direct connections is denoted as the skin feature value of the laser emission region at the same acquisition time.
[0064] It is understood that a positive correlation is applied to the first ratio of the laser emitting area at the acquisition time and the average number of direct connections, ensuring that both the first ratio and the average number of direct connections of the laser emitting area at the acquisition time are positively correlated with the skin characteristic value of the laser emitting area at the same acquisition time. It is understood that the positive correlation in this application refers to the relationship between the independent and dependent variables. The independent variables are the first ratio and the average number of direct connections of the laser emitting area at the acquisition time, and the dependent variable is the skin characteristic value of the laser emitting area at the same acquisition time. The positive correlation means that the dependent variable increases (decreases) as the independent variable increases (decreases), and can be an additive or multiplicative relationship.
[0065] Preferably, as an embodiment of this application, the product of the first ratio of the laser emitting area at the acquisition time and the average number of direct connections is recorded as the skin feature value of the laser emitting area at the same acquisition time.
[0066] Understandably, the average number of direct connections within the laser emission area is used to evaluate the significance of regional concentration within that area. A higher average number of direct connections indicates a more concentrated distribution of high-absorption regions within the laser emission area. Combining the average number of direct connections with the proportion of high-absorption regions within the laser emission area allows for the evaluation of the concentrated distribution of skin areas potentially corresponding to melanin deposition or rich subcutaneous blood vessels. A more concentrated distribution of these areas within the laser emission area indicates a higher skin characteristic value for that region.
[0067] Furthermore, the distribution and development of different hair follicles within the laser emission area are different, while the distribution and development of different hair follicles are similar in areas with darker skin tone due to melanin deposition or vascular distribution. Further analysis was conducted on the laser absorption status of the area with the highest concentration of high absorption within the laser emission area.
[0068] Connectivity analysis is performed on all high-absorptivity regions contained in the laser emission region at the same acquisition time to obtain the connected regions formed by the high-absorptivity regions. The connected region containing the most high-absorptivity regions is denoted as the high-absorptivity cluster region. The average similarity of the laser reflection curves of all different high-absorptivity regions within the high-absorptivity cluster region is denoted as the reflection similarity of the high-absorptivity cluster region. The number of high-absorptivity regions contained within the high-absorptivity cluster region is denoted as the cluster number of high-absorptivity cluster regions.
[0069] The positive correlation between the skin feature values of the laser emission area at the same acquisition time, the reflection similarity of the high-absorption concentration area determined by the laser emission area, and the concentration number is recorded as the skin sensitivity index of the laser emission area at the same acquisition time.
[0070] It is understood that a positive correlation is applied to the skin feature values of the laser emission area at the same acquisition time, the reflection similarity of the high-absorption concentrated area determined by the laser emission area, and the concentration quantity. This ensures that the skin feature values, the reflection similarity, and the concentration quantity are positively correlated with the skin sensitivity index. It is also understood that the positive correlation in this application refers to the relationship between the independent and dependent variables. The independent variables are the skin feature values, the reflection similarity, and the concentration quantity, and the dependent variable is the skin sensitivity index. The positive correlation means that the dependent variable increases (decreases) as the independent variable increases (decreases), and can be an additive or multiplicative relationship.
[0071] Preferably, as an embodiment of this application, the logarithm of the sum of the number of high-absorption concentration areas determined by the laser emission area (base 2) and the number 1 is denoted as the first logarithm of the high-absorption concentration areas determined by the laser emission area. The product of the first logarithm of the high-absorption concentration areas determined by the laser emission area, the reflection similarity, and the skin characteristics of the laser emission area at the same acquisition time is denoted as the skin sensitivity index of the laser emission area at the same acquisition time.
[0072] The skin sensitivity index is a focused analysis of laser absorption in the most concentrated areas of high absorption within the laser emission area. The more concentrated and numerous these high-absorption areas are, and the more similar the laser absorption patterns among different high-absorption areas within this concentration, the more pronounced and larger areas of darker skin tone or higher vascularity appear within the laser emission area. In this case, the higher the skin sensitivity index of the laser emission area, the more laser energy is absorbed by melanin deposits or subcutaneous blood vessels, increasing the likelihood of skin discomfort and requiring a lower power for hair removal. Conversely, the lower the skin sensitivity index, the more laser energy is absorbed by hair follicles, resulting in lower skin sensitivity and requiring a higher power for hair removal.
[0073] At this point, the skin sensitivity index of the laser emission area at the time of acquisition is obtained.
[0074] Step S004: Based on the duration of hair removal treatment of the laser emission area by the semiconductor hair removal device up to the acquisition time, and the skin sensitivity index of the laser emission area at the acquisition time, determine the working power of the semiconductor hair removal device at the next adjacent acquisition time, thereby realizing the dynamic power allocation of the semiconductor hair removal device.
[0075] Furthermore, as the hair removal process continues, the hair follicles gradually open. At this time, the absorption efficiency of the hair follicles to the laser gradually increases, and as the hair removal time increases, heat gradually accumulates. Therefore, as the hair removal process continues, it is often necessary to gradually reduce the working power of the hair removal device.
[0076] Based on the duration of laser hair removal treatment on the laser emission area by the semiconductor hair removal device up to the acquisition time, and the skin sensitivity index of the laser emission area at the acquisition time, the operating power of the semiconductor hair removal device at the next adjacent acquisition time is determined. Specifically, the calculation formula is as follows:
[0077]
[0078] In the formula, Indicates the first The operating power of the semiconductor hair removal device at each acquisition moment; the semiconductor hair removal device until the... The negative of the duration of laser hair removal treatment on the laser emission area at the first acquisition time is used as the exponent of an exponential function with a natural constant as the base. The calculated value of the exponential function is denoted as the i-th... The time decay coefficient at each acquisition time. Indicates the first Time decay coefficient at each acquisition moment; Indicates the laser emission region in the... Skin sensitivity index at each sampling time; This represents the preset minimum power. In this embodiment, the preset minimum power is set to half of the rated operating power of the semiconductor hair removal device. Indicates the first The operating power of the semiconductor hair removal device at each acquisition moment.
[0079] It should be noted that since there is no adjacent previous acquisition time at the first acquisition time, this embodiment directly assigns the operating power of the semiconductor hair removal device at the first acquisition time to half of the rated operating power of the semiconductor hair removal device.
[0080] When the calculated operating power of the semiconductor hair removal device at a certain data acquisition moment is greater than the rated operating power of the semiconductor hair removal device, the calculated operating power of the semiconductor hair removal device at the data acquisition moment is assigned to the rated operating power of the semiconductor hair removal device to ensure the normal operation of the semiconductor hair removal device.
[0081] Based on the duration of laser hair removal treatment on the laser emission area by the semiconductor hair removal device up to the acquisition time, and the skin sensitivity index of the laser emission area at the acquisition time, the working power of the semiconductor hair removal device at the next adjacent acquisition time is determined. Under the premise of considering the gradual increase in the absorption efficiency of the hair follicle to the laser and the gradual accumulation of heat, the adjustment range of the working power between adjacent acquisition times is avoided to be too large. At the same time, the working power of the laser emission area with darker skin or more blood vessels is adaptively reduced.
[0082] This achieves dynamic power distribution for semiconductor hair removal devices.
[0083] The above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the principles of this application should be included within the protection scope of this application.
Claims
1. A dynamic power allocation method for semiconductor hair removal devices based on spectral analysis, characterized in that, The method includes the following steps: Collect the laser emission curves and laser reflection curves of all areas within the laser emission area of the semiconductor hair removal device at the same acquisition time, and calculate the emitted and reflected laser energy values based on the laser emission curves and laser reflection curves respectively; Based on the difference in laser energy values emitted and reflected in the same acquisition time, the absorption characteristic index of the area at the same acquisition time is calculated, and the high absorption area and low absorption area at the acquisition time are divided according to the absorption characteristic index. Based on the location distribution of all high-absorbency regions within the laser emission area at the same acquisition time, and the number of high-absorbency and low-absorbency patches contained in the laser emission area at the same acquisition time, the skin characteristic value of the laser emission area at the same acquisition time is calculated. Combined with the adjacency of high-absorbency regions, the skin sensitivity index of the laser emission area at the same acquisition time is determined. Based on the duration of hair removal treatment on the laser emission area by the semiconductor hair removal device up to the acquisition time, and the skin sensitivity index of the laser emission area at the acquisition time, the operating power of the semiconductor hair removal device at the next adjacent acquisition time is determined, thereby realizing dynamic power allocation of the semiconductor hair removal device.
2. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 1, characterized in that, The emitted and reflected laser energy values are the integral values of the laser emission curve and the laser reflection curve, respectively.
3. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 1, characterized in that, The specific method for obtaining the absorption characteristic index is as follows: The difference between the emitted and reflected laser energy values of the area at the same acquisition time is recorded as the attenuation energy of the area at the same acquisition time. The ratio of the attenuation energy of the region to the emitted laser energy at the same acquisition time is denoted as the absorption characteristic index of the region at the same acquisition time.
4. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 1, characterized in that, The specific method for dividing the high-absorption region and the low-absorption area is as follows: The absorption characteristic threshold is determined based on the absorption characteristic index of all areas within the laser emission region at the same acquisition time. Regions with an absorption characteristic index greater than the absorption characteristic threshold are marked as high-absorbency regions at the same acquisition time, and regions with an absorption characteristic index less than or equal to the absorption characteristic threshold are marked as low-absorbency regions at the same acquisition time.
5. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 1, characterized in that, The specific method for determining the skin feature values is as follows: The average number of direct connections of the laser emission region at the same acquisition time is determined based on all adjacent high-absorption regions within the laser emission region at the same acquisition time. The skin characteristic value of the laser emission area at the same acquisition time is determined based on the number of high-absorbency regions and low-absorbency patches contained in the laser emission area at the same acquisition time, and the average number of direct connections of the laser emission area at the same acquisition time.
6. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 5, characterized in that, The method for obtaining the average number of direct connections is as follows: The number of high-absorbency regions within the laser emission region at the same acquisition time, and the number of high-absorbency regions adjacent to high-absorbency regions, is recorded as the number of direct connections of high-absorbency regions. The average number of direct connections in all high-absorptivity regions within the laser emission region at the same acquisition time is denoted as the average number of direct connections in the laser emission region at the same acquisition time.
7. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 5, characterized in that, The specific method for determining the skin feature values of the laser emission area at the same acquisition time is as follows: The ratio of the number of high-absorbency regions to the number of low-absorbency patches contained in the laser emission region at the same acquisition time is denoted as the first ratio of the laser emission region at the same acquisition time. The positive correlation between the first ratio of the laser emission area at the acquisition time and the average number of direct connections is recorded as the skin feature value of the laser emission area at the same acquisition time.
8. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 1, characterized in that, The specific method for obtaining the skin sensitivity index is as follows: Based on the adjacency of high-absorption regions, the reflection similarity and concentration of high-absorption concentrated regions determined by the laser emission region are obtained respectively; The positive correlation between the skin feature values of the laser emission area at the same acquisition time, the reflection similarity of the high-absorption concentration area determined by the laser emission area, and the concentration number is recorded as the skin sensitivity index of the laser emission area at the same acquisition time.
9. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 8, characterized in that, The specific method for determining the reflection similarity and concentration quantity of the high-absorption concentration region is as follows: Obtain the connected regions formed by the high absorptivity regions. The connected region containing the most high absorptivity regions is denoted as the high absorptivity concentration region. The average similarity of the laser reflection curves of all different high absorptivity regions within the high absorptivity concentration region is denoted as the reflection similarity of the high absorptivity concentration region. The number of high-absorbency regions contained within a high-absorbency concentration region is denoted as the concentration number of high-absorbency concentration regions.
10. The dynamic power allocation method for semiconductor hair removal devices based on spectral analysis according to claim 1, characterized in that, The formula for calculating the operating power of the semiconductor hair removal device at the next adjacent acquisition time is: In the formula, Indicates the first The operating power of the semiconductor hair removal device at each acquisition moment; the semiconductor hair removal device until the... The negative of the duration of laser hair removal treatment on the laser emission area at the first acquisition time is used as the exponent of an exponential function with a natural constant as the base. The calculated value of the exponential function is denoted as the i-th... The time decay coefficient at each acquisition time. Indicates the first Time decay coefficient at each acquisition moment; Indicates the laser emission region in the... Skin sensitivity index at each sampling time; Indicates the preset minimum power; Indicates the first The operating power of the semiconductor hair removal device at each acquisition moment.
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