Integrated uniform flow gas phase spray header, forming process and semiconductor film deposition equipment

Abstract

The invention relates to an integrated uniform flow gas phase spray header, a forming process and semiconductor film deposition equipment, the spray header comprises an integrally formed spray body, the first side of the spray body is set as a gas inlet side, the second side of the spray body is set as a gas outlet side, and the first side and the second side of the spray body are communicated with each other. A first array hole and a second array hole which are crisscrossed in a latticed manner and are communicated with each other to form a gas diffusion layer are formed in the inner part, close to the gas outlet side, of the spraying body, and a plurality of gas outlet transition grooves distributed in an array manner are formed in the gas diffusion layer; each air outlet transition groove is communicated with an air outlet hole penetrating through the air outlet side; and the air inlet flow channel group comprises an air inlet channel, a first air guide channel, an air uniformizing ring groove and a second air guide channel which are communicated in sequence. According to the invention, the gas can be more quickly and uniformly diffused to the whole gas diffusion layer, and the gas mixture can be more uniformly acted on the wafer after being sprayed out from the gas outlet holes in cooperation with the uniformly and densely distributed gas outlet holes.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chemical vapor deposition, in particular to an integrated uniform flow gas phase shower head, a forming process and a semiconductor thin film deposition device. BACKGROUND

[0002] When a semiconductor product is prepared, a film or a crystal structure required is often formed on a semiconductor material by a vapor phase growth technology. When the vapor phase growth process is performed, a gas mixture of one or more gases participating in the reaction is uniformly fed into a process chamber by a gas shower head. The gas mixture acts on a wafer surface, and a thin film is deposited on the wafer surface under the action of high temperature.

[0003] The existing gas shower head generally comprises a body, a gas outlet plate and a gas inlet part. The body is formed with a gas cavity. The gas inlet part is arranged at the upper part of the body and is in communication with the gas cavity. The gas outlet plate is arranged at the bottom of the body, and a plurality of gas outlet holes are densely arranged on the gas outlet plate. The gas mixture is sprayed out from the gas outlet holes after being diffused in the gas cavity. However, since the gas mixture is in a high temperature state, and the process chamber is also in a high temperature environment, the gas outlet plate is in the form of a thin plate, and the gas outlet holes are arranged on the gas outlet plate. Therefore, under the action of high temperature for a long time, the gas outlet plate will be slightly deformed, and the gas outlet holes will also be deformed, which causes the gas mixture to be unevenly sprayed into the process chamber from the gas outlet holes, thereby affecting the uniformity of the thin film deposition. SUMMARY

[0004] In view of the above-mentioned shortcomings of the prior art, the present application aims to provide an integrated uniform flow gas phase shower head, a forming process and a semiconductor thin film deposition device, which has the advantage of improving the uniformity of gas diffusion.

[0005] In a first aspect, the present application discloses an integrated uniform flow gas phase shower head, comprising: an integrally formed shower body, a first side of the shower body is arranged as a gas inlet side, and a second side is arranged as a gas outlet side, a first array hole and a second array hole in a grid shape are arranged in the interior of the shower body close to the gas outlet side, and are in communication with each other to form a gas diffusion layer, a plurality of gas outlet transition grooves arranged in an array are arranged in the gas diffusion layer, and each gas outlet transition groove is in communication with a gas outlet hole penetrating through the gas outlet side; and a gas inlet flow channel group for guiding the gas mixture from a gas supply device to the gas diffusion layer; The air inlet channel group comprises: an air inlet channel passing through the air inlet side, a uniform air ring groove arranged in the spray body, a plurality of first air guide channels communicating the air inlet channel and the uniform air ring groove, and a plurality of second air guide channels communicating the uniform air ring groove and the gas diffusion layer, and the distance between the air outlet end of the second air guide channel and the center of the air outlet side is 2 / 5-3 / 5 of the air outlet side radius.

[0006] The above technical solution is realized, when chemical vapor deposition is performed, the gas mixture enters the spray body from the air inlet channel, is dispersed and diffused into the uniform air ring groove after the first air guide channel, the gas mixture is sprayed out of the first air guide channel and impacts on the inner wall of the uniform air ring groove, and then the gas mixture diffuses along the uniform air ring groove to both sides, so that the gas mixture can be uniformly dispersed in the uniform air ring groove, the gas flow of the gas mixture entering each second air guide channel is equivalent, when the gas mixture flows through the air inlet end of the second air guide channel, the gas mixture is injected into the gas diffusion layer from the second air guide channel, and diffuses in the gas diffusion layer, since the gas diffusion layer is formed by the first array hole and the second array hole in longitudinal and transverse interlacing, the gas mixture can diffuse along a shorter path, and a larger number of air outlet transition grooves can be formed, and a more uniform air outlet hole can be formed; at the same time, since the air outlet end of the second air guide channel is located at 2 / 5-3 / 5 of the air outlet side radius, the gas mixture can diffuse to the middle and the outside of the gas diffusion layer at the same time, so that the gas can be more quickly and uniformly diffused to the entire gas diffusion layer, and in combination with the uniformly distributed air outlet holes, the gas mixture can be more uniformly sprayed from the air outlet holes to act on the wafer, so that the finally deposited film is also more uniform, and since the spray body is an integral structure, deformation does not easily occur during use and under the action of high temperature for a long time, thereby providing a structural basis for gas dispersion stability, and effectively prolonging the service life of the shower head.

[0007] As a preferred scheme of the application, the air outlet ends of the plurality of first air guide channels are uniformly distributed on one side of the uniform air ring groove close to the air inlet side, the air inlet ends of the plurality of second air guide channels are uniformly distributed on one side of the uniform air ring groove close to the air outlet side, and the air inlet end of each second air guide channel corresponds to the middle between the air outlet ends of two adjacent first air guide channels.

[0008] The above technical solution is realized, so that the gas amount of the gas mixture is equivalent when the gas mixture diffuses in the uniform air ring groove and then enters each second air guide channel, and the uniformity of gas diffusion is further improved.

[0009] As a preferred scheme of the application, the end of the air inlet channel is provided with a diffusion section, the diffusion section comprising: an arc-shaped diffusion port expanding outward from the air inlet channel, and an arc-shaped shunt groove opposite to the arc-shaped diffusion port and opening towards the air inlet channel, and the air inlet end of the first air guide channel being communicated with the arc-shaped shunt groove.

[0010] The above technical scheme is implemented, and after the gas mixture flows out of the air inlet channel, the gas mixture first diffuses outward along the arc-shaped diffusion port and then is shunted to each first air guide channel through the arc-shaped shunt groove, so that the diffusion of the gas mixture is more uniform.

[0011] As a preferred scheme of the application, the air flow acceleration port is provided between the air distribution ring groove and the first air guide channel and / or between the air distribution ring groove and the second air guide channel, the air flow acceleration port comprising a contraction section, a necking section and an expansion section communicated in sequence, and the size of the cross section of the air flow acceleration port gradually decreases from the contraction section to the necking section and gradually increases from the necking section to the expansion section.

[0012] The above technical scheme is implemented, and when the air flow passes through the air flow acceleration port, due to the change in the size of the flow cross section, according to the principle of mass conservation, ρ×A×V=constant, and since the cross section decreases, the flow rate will correspondingly increase to maintain mass conservation, and the flow rate is balanced in the necking section, and when passing through the expansion section, since the air flow speed is fast, the air flow will rapidly expand in the expansion section, so that the density of the gas mixture is significantly reduced, and the effect will exceed the effect of the increase in the cross section, so that the flow rate of the gas is further increased, the flow rate of the gas mixture is increased through the air flow acceleration port, so that the gas can diffuse more rapidly in the air distribution ring groove or the gas diffusion layer, and the uniformity of gas diffusion is further improved.

[0013] As a preferred scheme of the application, the second air guide channel is arranged to be perpendicular to the air outlet side.

[0014] The above technical scheme is implemented, so that the air flow emitted from the second air guide channel will not be biased towards one side, and the uniformity of gas diffusion is further improved.

[0015] As a preferred scheme of the application, the first array hole and the second array hole both penetrate the spray body, and a sealing ring is sealingly connected to the outside of the gas diffusion layer on the spray body, and the sealing ring is used for sealing the first array hole and the second array hole.

[0016] The above technical scheme is implemented, so that the first array hole and the second array hole can be formed by simpler drilling and milling processing, and the processing difficulty and cost are reduced, and the operation mode of sealing the first array hole and the second array hole through the sealing ring is also simpler and more convenient.

[0017] As a preferred scheme of the application, an outer communication ring groove is further arranged between the sealing ring and the spraying body, and the outer communication ring groove is in communication with each of the first array holes and the second array holes.

[0018] The above technical scheme is implemented, and the gas mixture can also diffuse and communicate outside the first array holes and the second array holes through the outer communication ring groove, so that the uniformity of gas diffusion is further improved.

[0019] As a preferred scheme of the application, the gas outlet hole comprises a gas outlet channel and a gas outlet flared hole which are sequentially in communication, the gas outlet channel is in communication with the gas outlet transition groove, and the gas outlet flared hole is a tapered hole which is outwardly flared, and the gas mixture is sprayed out through the adjacent gas outlet flared holes and mixed with each other on the flow path.

[0020] The above technical scheme is implemented, so that the gas outlet hole can form an effect similar to the gas flow accelerating port, the gas mixture can further form an outward diffusion effect after being sprayed out of the gas outlet hole, and the gas mixture is further diffused more uniformly in the process chamber through the cross-mixing effect.

[0021] The second aspect of the embodiment of the application provides a process for forming the integrated uniform-flow gas-phase shower head. The first base and the second base are pre-formed to be matched with each other, the first base and the second base are matched with each other to form the spraying body, the bottom of the first base is arranged as the gas outlet side, and the top of the second base is arranged as the gas inlet side; The first array holes and the second array holes which are longitudinally and transversely staggered and in communication with each other in a grid shape are drilled in the side surface close to the gas outlet side of the first base in a direction parallel to the gas outlet side to form a gas diffusion layer, and the gas diffusion layer has a plurality of gas outlet transition grooves which are arranged in an array; The gas outlet holes which are arranged in an array and in communication with the gas outlet transition grooves are drilled in the gas outlet side of the first base, the uniform-gas ring groove which is in an annular shape is formed in the bottom of the first base, and a plurality of second gas guide channels which are in communication with the gas diffusion layer are uniformly formed to form a first intermediate body, wherein the distance between the gas outlet end of the second gas guide channel and the center of the gas outlet side is 2 / 5-3 / 5 of the radius of the gas outlet side; The gas inlet channel which extends to the middle part of the second base is formed in the middle part of the gas inlet side of the second base, and the first gas guide channel which is obliquely arranged and penetrates to the bottom end of the gas inlet channel is formed in the bottom of the second base to form a second intermediate body, wherein the end of the first gas guide channel can be in communication with the uniform-gas ring groove; The first intermediate body and the second intermediate body are butted and matched, and then welded and fixed to form the spraying body, and the ends of the first array holes and the second array holes are sealed.

[0022] In a third aspect, the present application provides a semiconductor thin film deposition device, comprising the integrated uniform flow gas phase shower head according to the first aspect, wherein the gas outlet holes of the integrated uniform flow gas phase shower head are connected to a process chamber of the semiconductor thin film deposition device.

[0023] As described above, the present application has the following beneficial effects: The present application provides an integrated uniform flow gas phase shower head, a forming process and a semiconductor thin film deposition device. When chemical vapor deposition is performed, the gas mixture enters the spray body from the gas inlet channel, is dispersed and diffused into the gas distribution ring groove through the first gas guide channel, impacts on the inner wall of the gas distribution ring groove after being sprayed out of the first gas guide channel, and then diffuses along the gas distribution ring groove to both sides. The gas mixture can be uniformly dispersed in the gas distribution ring groove, so that the gas flow of the gas mixture entering each second gas guide channel is equivalent. When the gas mixture flows through the gas inlet end of the second gas guide channel, it is injected into the gas diffusion layer from the second gas guide channel and diffuses in the gas diffusion layer. Since the gas diffusion layer is formed by the communication of the first array of holes and the second array of holes, the gas mixture can diffuse along a shorter path and form a larger number of gas outlet transition grooves, and correspondingly form more uniform gas outlet holes. At the same time, since the gas outlet end of the second gas guide channel is located at 2 / 5-3 / 5 of the radius of the gas outlet side, the gas mixture can diffuse to the middle and the outside of the gas diffusion layer at the same time, so that the gas can diffuse more quickly and uniformly to the entire gas diffusion layer. In combination with the uniformly distributed gas outlet holes, the gas mixture sprayed out of the gas outlet holes can act more uniformly on the wafer, so that the finally deposited thin film is also more uniform. Since the spray body is an integrated structure, it will not easily deform under the action of high temperature for a long time during use, thereby providing a structural basis for the stability of gas dispersion and effectively prolonging the service life of the shower head. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 A structure schematic diagram of the integrated uniform flow gas phase shower head in the embodiment of the present application is shown.

[0025] Figure 2 A perspective view of the integrated uniform flow gas phase shower head in the embodiment of the present application is shown, which is used to show the arrangement mode of the gas diffusion layer, the gas outlet channel and the gas inlet flow channel group.

[0026] Figure 3 A schematic diagram of the arrangement structure of the gas diffusion layer in the embodiment of the present application is shown.

[0027] Figure 4 An enlarged view of A part of Figure 3 is shown.

[0028] Figure 5Figure 1 shows a cross-sectional view along the central axis of the integrated flow uniformization showerhead according to an embodiment of the present application.

[0029] Figure 6 Figure 2 shows a magnified view of section B of Figure 1. Figure 5

[0030] Figure 7 Figure 3 shows a schematic diagram of the connection structure between the gas flow acceleration port and the gas uniformization ring groove according to another embodiment of the present application.

[0031] Figure 8A Figure 4 shows a schematic diagram of the gas pressure distribution on the entire gas outlet side of a prior art gas phase showerhead during deposition.

[0032] Figure 8B Figure 5 shows a schematic diagram of the gas pressure distribution in the region corresponding to the wafer on the gas outlet side of a prior art gas phase showerhead during deposition.

[0033] Figure 9A Figure 6 shows a schematic diagram of the gas pressure distribution on the entire gas outlet side of the integrated flow uniformization showerhead according to an embodiment of the present application during deposition.

[0034] Figure 9B Figure 7 shows a schematic diagram of the gas pressure distribution in the region corresponding to the wafer on the gas outlet side of the integrated flow uniformization showerhead according to an embodiment of the present application during deposition.

[0035] Figure 10 Figure 8 shows a flow chart of the molding process according to an embodiment of the present application.

[0036] Corresponding component names represented by the numbers and letters in the figures: 10, shower body; 11, gas inlet side; 12, gas outlet side; 13, gas diffusion layer; 131, first array of holes; 132, second array of holes; 133, gas outlet transition groove; 14, gas outlet hole; 141, gas outlet passage; 142, gas outlet flared portion; 15, sealing ring; 16, outer communication ring groove; 17, joint section; 20, gas inlet flow channel set; 21, gas inlet passage; 22, gas uniformization ring groove; 23, first gas guide passage; 24, second gas guide passage; 25, diffusion section; 251, arc-shaped diffusion port; 252, arc-shaped shunt groove; 26, gas flow acceleration port; 261, contraction section; 262, necked section; 263, expansion section. DETAILED DESCRIPTION

[0037] The embodiments of the present application are described below by way of specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in the specification.

[0038] Please refer to Figures 1 to 10 ​It is to be understood that the structures, proportions, sizes, etc. shown in the drawings accompanying the present specification are merely intended to assist in understanding and reading the present specification and are not intended to limit the conditions under which the present application can be implemented, and therefore do not have technical significance. Any modification of structures, change of proportional relationships, or adjustment of sizes, which does not affect the effects and purposes that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application. Meanwhile, the terms such as "upper", "lower", "left", "right", "middle", and "one" used in the present specification are merely for the convenience of clear description, and are not intended to limit the scope of the present application, and the change or adjustment of relative relationships without substantial changes in technical content should also be considered as the scope of the present application.

[0039] Referring to Figures 1 to 10 The first aspect of the embodiments of the present application provides an integrated uniform flow gas phase shower head, comprising: an integrally formed shower body 10, a first side of the shower body 10 is provided as a gas inlet side 11, a second side is provided as a gas outlet side 12, the shower body 10 is internally provided with a first array hole 131 and a second array hole 132 near the gas outlet side 12, which are longitudinally and transversely staggered in a grid shape and are interconnected to form a gas diffusion layer 13, the gas diffusion layer 13 has a plurality of gas outlet transition grooves 133 arranged in an array, and each gas outlet transition groove 133 is provided with a gas outlet hole 14 penetrating the gas outlet side 12; and a gas inlet flow channel group 20 for guiding the gas mixture from the gas supply equipment to the gas diffusion layer 13.

[0040] Specifically, the gas inlet flow channel group 20 comprises: a gas inlet channel 21 penetrating the gas inlet side 11, a gas uniform ring groove 22 provided in the shower body 10, a plurality of first gas guide channels 23 communicating the gas inlet channel 21 and the gas uniform ring groove 22, and a plurality of second gas guide channels 24 communicating the gas uniform ring groove 22 and the gas diffusion layer 13, the gas outlet end of the second gas guide channel 24 is spaced apart from the center of the gas outlet side 12 by 2 / 5~3 / 5 of the radius of the gas outlet side 12.

[0041] The spraying body 10 can be formed by milling, casting or other processing methods. The spraying body 10 is in the shape of a truncated cone, and a disc-shaped forming section is formed at the bottom of the spraying body 10 to form the gas diffusion layer 13 and the gas outlet hole 14. The bottom of the forming section is the gas outlet side 12, and the top of the spraying body 10 is the gas inlet side 11. A joint section 17 is formed to facilitate connection and installation of the spraying body 10. The joint section 17 is fixed to the installation station of the gas supply device or the semiconductor thin film deposition device by clamping, screwing, bolt connection or other methods. In a specific example, a plurality of screw holes are formed on the joint section 17 to screw and fix the spraying body 10. Alternatively, external threads are formed on the joint section 17 to screw and fix the joint section 17 to the internal threads of the installation station of the gas supply device or the semiconductor thin film deposition device. In some embodiments, a heating hole is formed on the joint section 17 to insert a heating rod. The heating hole extends above the gas diffusion layer 13 but does not communicate with the gas diffusion layer 13, and ensures that the heating hole does not communicate with the gas inlet flow channel group 20. The spraying body 10 is heated by inserting a heating rod into the heating hole, so that the gas mixture can be kept at a high temperature.

[0042] Referring to Figure 3 and Figure 4 , the structure of the gas outlet side 12 is described in detail as follows: the extension directions of the first array of holes 131 and the second array of holes 132 are parallel to and in the same plane as the plane of the gas outlet side 12, i.e., in the use state, the first array of holes 131 and the second array of holes 132 are in a horizontal state. The first array of holes 131 and the second array of holes 132 are linearly arrayed, and the diameters of the first array of holes 131 and the second array of holes 132 are the same and are distributed in a grid-like crisscross manner. Specifically, the axis direction of the first array of holes 131 is perpendicular to the axis direction of the second array of holes 132, so that the first array of holes 131 and the second array of holes 132 are arranged in a staggered manner. Figure 3 and Figure 4The coordinate system direction shown in the figure is an example, the X-axis and the Y-axis are perpendicular to each other, the first array holes 131 are uniformly arranged in multiple columns along the Y-axis direction, and the second array holes 132 are uniformly arranged in multiple columns along the X-axis direction, so that the first array holes 131 and the second array holes 132 can communicate with each other to form the gas diffusion layer 13, and the gas mixture can freely diffuse in the gas diffusion layer 13; because the first array holes 131 and the second array holes 132 are cross-distributed, a partition block is formed between two first array holes 131 adjacent in the array direction or between two second array holes 132 adjacent in the array direction, and the gas outlet transition groove 133 is located around the partition block and on the first array hole 131 or the second array hole 132, that is, the continuous gas outlet transition groove 133 is formed on both sides of the partition block along the X-axis direction in the extension direction of the first array hole 131 and on both sides of the partition block along the Y-axis direction in the extension direction of the second array hole, so as to form the gas diffusion layer 13 by the first array hole 131, the second array hole 132 and the communication therebetween, and when the gas mixture flows through the gas outlet transition groove 133, part of the gas mixture can be discharged from the gas outlet hole 14 to the process chamber and act on the wafer surface. In other embodiments, the included angle between the axis directions of the first array holes 131 and the second array holes 132 can also be set to any angle between 30°-150°, that is, the included angle between the X-axis and the Y-axis is any angle between 30°-150°, as long as multiple array-distributed gas outlet transition grooves 133 can be formed.

[0043] It can be understood that in the related prior art, a cavity is directly formed in the spray body 10 for the diffusion of the sprayed gas, so that the gas outlet side 12 of the spray body 10 forms a planar thin plate with a small thickness, and a large number of micro-holes are densely arranged on the planar thin plate as gas outlet holes. In a long-term high-temperature environment, the gas outlet side 12 is prone to deformation, so that the micro-holes are deformed, and the uniformity of the sprayed gas is poor. In the embodiments of the present application, the cavity structure is replaced by the gas diffusion layer 13 for the diffusion of the sprayed gas along the plane parallel to the gas outlet side 12. The entire gas diffusion layer 13 is a solid structure, and the gas outlet side 12 is also an integrated solid structure design with the spray body 10. This makes the gas outlet side 12 almost not deformed, and through the change of the gas inlet structure, the uniformity of the gas diffusion can be ensured on the basis of improving the structural strength.

[0044] The gas inlet channel 21 penetrates from the top of the joint section 17 to the middle of the spray body 10. In some embodiments, in order to be connected with the gas supply equipment, a communication pipe can also be arranged on the joint section 17, the communication pipe is opposite to the gas inlet channel 21 to introduce the gas mixture into the gas inlet channel 21, and the end position of the gas inlet channel 21 can be selected according to the size of the spray body 10 and the required inclination angle of the first gas guide channel 23.

[0045] In some embodiments, a diffusion section 25 can also be arranged at the end of the air inlet channel 21, the diffusion section 25 comprising: an arc-shaped diffusion port 251 expanding outward from the air inlet channel 21, and an arc-shaped distribution groove 252 opposite to the arc-shaped diffusion port 251 and opening towards the air inlet channel 21, the air inlet end of the first air guide channel 23 being communicated with the arc-shaped distribution groove 252. It can be understood that the arc-shaped diffusion port 251 opens downward, the arc-shaped distribution groove 252 opens upward, the arc-shaped diffusion port 251 and the arc-shaped distribution groove 252 form a relatively clamped state, the arc of the arc-shaped diffusion port 251 and the arc of the arc-shaped distribution groove 252 can be the same, that is, they are combined to form a spherical groove, or they can be set to be different in order to reduce the processing difficulty, and generally, in order to facilitate the communication with the first air guide channel 23, the cross section of the arc-shaped distribution groove 252 is preferably set to be semicircular or close to semicircular. After the gas mixture flows out of the air inlet channel 21, it is first diffused outward along the arc-shaped diffusion port 251, and then distributed to each first air guide channel 23 through the arc-shaped distribution groove 252, so that the gas mixture is diffused more uniformly.

[0046] The air uniformizing ring groove 22 is arranged in the spray body 10 and is in a circular ring shape, the axis of the air uniformizing ring groove 22 is consistent with the axis of the spray body 10, the cross section of the air uniformizing ring groove 22 can be circular, rectangular, polygonal, semicircular, arc-shaped or any other shape, and preferably is circular or rectangular, and the plane where the air uniformizing ring groove 22 is arranged is also set to be parallel to the plane of the air outlet side 12, so that the lengths of each first air guide channel 23 or each second air guide channel 24 are the same.

[0047] The first air guide channel 23 is usually arranged in 3-8 groups, and preferably in 4 groups, in order to facilitate the flow of gas to the air uniformizing ring groove 22, the first air guide channel 23 is usually arranged to be inclined downward, the air inlet end of the first air guide channel 23 is communicated to the arc-shaped distribution groove 252, and the air outlet end is communicated to the air uniformizing ring groove 22. It can be understood that the first air guide channel 23 is uniformly distributed around the air inlet channel 21, so that the gas mixture can be uniformly distributed to each first air guide channel 23, and the arrangement position of the air uniformizing ring groove 22 is matched, so that the gas mixture can also be uniformly diffused in the air uniformizing ring groove 22.

[0048] The second air guiding passages 24 are arranged in the same number as the first air guiding passages 23, so that the gas mixture can be more evenly distributed into each second air guiding passage 24. The angle between the second air guiding passage 24 and the plane of the gas outlet side 12 is usually any angle between 60° and 120°, and preferably, the second air guiding passage 24 is arranged perpendicular to the gas outlet side 12, so that the gas flow emitted from the second air guiding passage 24 is not biased to one side, further improving the uniformity of gas diffusion. The distance between the gas outlet end of the second air guiding passage 24 and the center of the gas outlet side 12 is 2 / 5 to 3 / 5 of the radius of the gas outlet side 12, and preferably, the gas outlet end of the second air guiding passage 24 is located at 1 / 2 of the radius of the gas outlet side 12. When the second air guiding passage 24 is arranged perpendicular to the gas outlet side 12, the center radius of the air uniform ring groove 22 is 1 / 2 of the radius of the gas outlet side 12. The gas inlet end of the second air guiding passage 24 is connected to the bottom of the air uniform ring groove 22, and the gas outlet end is connected to the gas diffusion layer 13. When connected to the gas diffusion layer 13, the second air guiding passage 24 can be directly connected through the top of the first array hole 131 and the second array hole 132. When the gas mixture enters the gas diffusion layer 13 from the second air guiding passage 24, it can quickly diffuse along the path of the first array hole 131 and the second array hole 132. In some embodiments, a flared expansion can be provided at the gas outlet end of the second air guiding passage 24 to facilitate the diffusion of the gas mixture in the gas diffusion layer 13.

[0049] Preferably, in some embodiments, the gas outlet ends of the first air guiding passages 23 are evenly distributed on one side of the air uniform ring groove 22 close to the gas inlet side 11, and the gas inlet ends of the second air guiding passages 24 are evenly distributed on the other side of the air uniform ring groove 22 close to the gas outlet side 12. The gas inlet end of each second air guiding passage 24 corresponds to the middle between the gas outlet ends of the adjacent two first air guiding passages 23. Taking four groups of first air guiding passages 23 and four groups of second air guiding passages 24 as an example, taking any position on the air uniform ring groove 22 as 0 position, the gas outlet ends of the four groups of first air guiding passages 23 are located at 0 position, 1 / 4 position, 1 / 2 position and 3 / 4 position on the upper part of the air uniform ring groove 22, and the gas inlet ends of the four groups of second air guiding passages 24 are located at 1 / 8 position, 3 / 8 position, 5 / 8 position and 7 / 8 position on the bottom of the air uniform ring groove 22, so that the amount of gas mixture entering each second air guiding passage 24 after diffusion in the air uniform ring groove 22 is substantially the same, further improving the uniformity of gas diffusion.

[0050] In an implementable embodiment, a gas flow accelerating port 26 is arranged between the air uniform ring groove 22 and the first air guiding passage 23 and / or between the air uniform ring groove 22 and the second air guiding passage 24. The gas flow accelerating port 26 includes a converging section 261, a converging section 262 and an expanding section 263 connected in sequence. The cross-sectional size of the gas flow accelerating port 26 gradually decreases from the converging section 261 to the converging section 262, and gradually increases from the converging section 262 to the expanding section 263. As shown in FIG. 2, the converging section 261 is connected to the air uniform ring groove 22, the converging section 262 is connected to the first air guiding passage 23, and the expanding section 263 is connected to the second air guiding passage 24. Figure 7As shown, Figure 7 A schematic view of the connection of the air uniformizing ring groove 22, the first air guiding passage 23 and the second air guiding passage 24 is shown when the air flow accelerating port 26 is arranged between the air uniformizing ring groove 22 and the second air guiding passage 24. It can be understood that only the partial profile shape of the air uniformizing ring groove 22, the first air guiding passage 23, the second air guiding passage 24 and the air flow accelerating port is shown in the figure, and the rest of the profile is the solid part of the spray body 10. Figure 7

[0051] The contraction section 261 and the expansion section 263 are both arc-shaped and gradually change, the maximum opening size of the contraction section 261 is basically the same as the size of the air uniformizing ring groove 22, and the maximum opening size of the expansion section 263 is equivalent to the diameter of the second air guiding passage 24. The contraction section 262 is a straight-through port to directly connect the contraction section 261 and the expansion section 263. Of course, in some embodiments, the contraction section 262 can be omitted, and the connection of the contraction section 261 and the expansion section 263 naturally forms the contraction section 262. In other embodiments, the air flow accelerating port 26 can also be arranged between the air uniformizing ring groove 22 and the first air guiding passage 23, or between the air uniformizing ring groove 22 and the first air guiding passage 23 and between the air uniformizing ring groove 22 and the second air guiding passage 24.

[0052] When the air flow passes through the air flow accelerating port 26, the size of the flow passage cross section changes. When passing through the contraction section 261, according to the mass conservation principle, ρ×A×V=constant. Since the cross section decreases, the flow rate will increase accordingly to maintain mass conservation. The flow rate is balanced in the contraction section 262. When passing through the expansion section 263, the air flow is rapidly expanded due to the high speed, which significantly reduces the density of the gas mixture. The effect exceeds the effect of the increased cross section, so the gas flow rate further increases. The air flow accelerating port 26 increases the flow rate of the gas mixture, so that the gas can diffuse more rapidly in the air uniformizing ring groove 22 or the gas diffusion layer 13, further improving the uniformity of gas diffusion.

[0053] The gas mixture diffuses in the gas diffusion layer 13 and is sprayed out of the air outlet hole 14. In a specific example, the air outlet hole 14 includes an air outlet passage 141 and an air outlet expansion hole 142 connected in sequence. The air outlet passage 141 is connected to the air outlet transition groove 133, and the air outlet expansion hole 142 is a conical hole that expands outward. The gas mixture sprayed out of the adjacent air outlet expansion hole 142 mixes with each other on the flow path. It can be understood that the gas mixture first passes through the air outlet passage 141 for gas aggregation and acceleration, and then passes through the air outlet expansion hole 142 for diffusion acceleration, so that the air flow can diffuse outward along the inner wall of the air outlet expansion hole 142. The air flow sprayed out of the adjacent air outlet holes 14 can overlap or interfere with each other on the diffusion path, thereby achieving the effect of cross mixing. ​

[0054] Through the above setting mode, the gas outlet hole 14 can form a similar effect with the gas flow acceleration port 26, and the gas mixture can further form an outward diffusion effect after being sprayed out of the gas outlet hole 14, and through the cross mixing effect, the gas mixture is further diffused more uniformly in the process chamber. Of course, in some embodiments, the gas outlet hole 14 can also be directly provided as a through hole.

[0055] Further, in the embodiment, the first array hole 131 and the second array hole 132 are provided to penetrate the spray body 10 along the X-axis direction and the Y-axis direction respectively, and the sealing ring 15 is further sealingly connected to the outside of the gas diffusion layer 13 on the spray body 10, the sealing ring 15 is used to seal the first array hole 131 and the second array hole 132, and the sealing ring 15 can be sealingly fixed with the spray body 10 by welding or the like; so that the first array hole 131 and the second array hole 132 can be more simply formed by drilling and milling, reducing the processing difficulty and processing cost, and the operation of sealing the first array hole 131 and the second array hole 132 by the sealing ring 15 is also more simple and convenient.

[0056] Meanwhile, in some embodiments, the outer communication ring groove 16 can also be provided between the sealing ring 15 and the spray body 10, the outer communication ring groove 16 communicates each first array hole 131 and second array hole 132, the outer communication ring groove 16 can be reserved and formed inside the sealing ring 15, for example, the cross section of the sealing ring 15 is provided as an L type, and the welding step is formed on the outside of the gas diffusion layer 13 on the spray body 10, when the two end faces of the sealing ring 15 are welded and fixed with the welding step, the outer communication ring groove 16 can be formed between the sealing ring 15 and the spray body 10, wherein the height of the outer communication ring groove 16 should be greater than or equal to the height of the gas diffusion layer 13; through the outer communication ring groove 16, the gas mixture can also be diffused and communicated outside the first array hole 131 and the second array hole 132, further improving the uniformity of gas diffusion. In some embodiments, a third gas guide channel can also be provided between the gas distribution ring groove 22 and the outer communication ring groove 16, or between the gas distribution ring groove 22 and the outer communication ring groove 16, to further improve the uniformity of the outward diffusion of the gas mixture.

[0057] When chemical vapor deposition is performed, the gas mixture enters the spray body 10 from the gas inlet channel 21, is dispersed and diffused into the gas distribution ring groove 22 through the first gas guide channel 23, and impacts on the inner wall of the gas distribution ring groove 22 after being sprayed out of the first gas guide channel 23. Then, the gas mixture diffuses along the gas distribution ring groove 22 to the two sides, so that the gas mixture can be uniformly dispersed in the gas distribution ring groove 22, and the gas flow of the gas mixture entering each second gas guide channel 24 is equivalent. When the gas mixture flows through the gas inlet end of the second gas guide channel 24, the gas mixture is sprayed into the gas diffusion layer 13 from the second gas guide channel 24, and diffuses in the gas diffusion layer 13. Since the gas diffusion layer 13 is formed by the communication of the first array of holes 131 and the second array of holes 132, the gas mixture can diffuse along a shorter path and form a larger number of gas outlet transition grooves 133, and correspondingly form more uniform gas outlet holes 14. At the same time, since the gas outlet end of the second gas guide channel 24 is located at 2 / 5-3 / 5 of the radius of the gas outlet side 12, the gas mixture can diffuse to the middle and the outside of the gas diffusion layer 13 at the same time, so that the gas can diffuse more quickly and uniformly to the entire gas diffusion layer 13. In combination with the uniformly distributed gas outlet holes 14, the gas mixture sprayed out of the gas outlet holes 14 can act more uniformly on the wafer, so that the finally deposited film is also more uniform. Since the spray body 10 is an integral structure, it will not easily deform under the action of high temperature for a long time during use, thereby providing a structural basis for the stability of gas dispersion and effectively prolonging the service life of the showerhead.

[0058] As shown in Figure 8A and Figure 8B , Figure 8A shows the gas pressure distribution diagram of the entire gas outlet side of a certain prior art gas phase showerhead when performing deposition work, Figure 8B shows the gas pressure distribution diagram of the region corresponding to the wafer in the gas outlet side of a certain prior art gas phase showerhead when performing deposition work, wherein the pressure unit is Torr, which has a direct conversion relationship with the standard atmosphere in the International System of Units, 1 standard atmosphere is equal to 760 Torr. This prior art is a cavity type showerhead, and the gas mixture enters from the middle of the showerhead and diffuses in the cavity, Figure 8A in which the pressure range of the gas outlet side is 14.08-15.12 Torr, and the range difference ΔP is 1.04 Torr, Figure 8B in which the pressure range of the wafer region corresponding to the gas outlet side is 14.15-15.06 Torr, and the range difference ΔP is 0.91 Torr. It can be seen that the pressure distribution uniformity in the prior art is poor, and the gas diffusion is uneven; Figure 9AFig. 1 shows a schematic diagram of the gas pressure distribution of the integrated uniform-flow gas-phase showerhead of the embodiment of the present application on the whole gas outlet side when performing deposition work, Figure 9B Fig. 2 shows a schematic diagram of the gas pressure distribution of the integrated uniform-flow gas-phase showerhead of the embodiment of the present application on the area corresponding to the wafer on the gas outlet side when performing deposition work, in this embodiment, the diameter of the gas outlet channel 141 of the gas outlet hole 14 is 0.3mm, Figure 9A In this embodiment, the pressure range on the gas outlet side is 14.78-15.12 Torr, and the range difference ΔP is 0.34 Torr, Figure 9B In this embodiment, the pressure range on the wafer area corresponding to the gas outlet side is 14.86-15.02 Torr, and the range difference ΔP is 0.16 Torr. It can be seen that the pressure distribution uniformity of the gas-phase showerhead of the present application is significantly improved, especially in the area corresponding to the wafer on the gas outlet side, which is improved by 0.75 Torr compared with the prior art. Due to the arrangement of the gas inlet channel group 20, the gas diffusion layer 13 and the gas outlet hole 14, the gas mixture is uniformly distributed at a high gas pressure in most areas in the middle of the gas outlet side 12. Since the middle of the showerhead is the main part of the wafer, the deposited film is more uniform.

[0059] The second aspect of the embodiment of the present application provides a process for forming the integrated uniform-flow gas-phase showerhead as described in the first aspect, as shown in Fig. 3, which comprises the following steps: Figure 10 As shown in Fig. 3, the process comprises the following steps: S100, pre-forming a first base and a second base matched with each other, the first base and the second base are matched with each other to form a shower body 10, and the bottom of the first base is arranged as a gas outlet side 12, and the top of the second base is arranged as a gas inlet side 11.

[0060] In this embodiment, the first base and the second base can be integrally formed by milling or casting, and corresponding positioning holes are usually arranged on the first base and the second base, the positioning holes are used for inserting positioning pins to position and assemble the first base and the second base, and the positioning holes can also be used as reference points for subsequent processing.

[0061] S200, drilling first array holes 131 and second array holes 132 in a grid-like crisscross and interconnected manner in a direction parallel to the gas outlet side 12 on the side close to the gas outlet side 12 of the first base to form a gas diffusion layer 13, and the gas diffusion layer 13 has a plurality of arrayed gas outlet transition grooves 133.

[0062] When the first array holes 131 and the second array holes 132 are processed, the drilling process can be performed by a pre-configured tooling die including a plurality of drill bits arranged side by side, so that a plurality of first array holes 131 / second array holes 132 can be processed in one action. When processing, the first base body is clamped on the machine table, and the tooling die drills the first array holes 131 on the first base body in parallel with the direction of the gas outlet side 12. When all the first array holes 131 are processed, the machine table clamp is rotated by 90°, and the second array holes 132 are drilled by the tooling die. At this time, the first array holes 131 and the second array holes 132 form a grid-shaped crisscross and interconnected state, i.e., a gas diffusion layer 13 is formed. Since the first array holes 131 and the second array holes 132 are cross-distributed, a partition block is formed between each of the first array holes 131 and the second array holes 132. The gas outlet transition groove 133 is located around the partition block and on the first array holes 131 or the second array holes 132.

[0063] S300, after the gas outlet holes 14 distributed in an array and communicating with the gas outlet transition groove 133 are drilled on the gas outlet side 12 of the first base body, and the annular gas uniformizing ring groove 22 is opened on the bottom of the first base body, a plurality of second gas guiding channels 24 communicating with the gas diffusion layer 13 are uniformly opened to form a first intermediate body. The distance between the gas outlet end of the second gas guiding channel 24 and the center of the gas outlet side 12 is 2 / 5-3 / 5 of the radius of the gas outlet side 12.

[0064] When the gas outlet holes 14 are processed, the gas outlet side 12 of the first base body is used as the reference processing plane. The numerical control machine tool can obtain the positions of the gas outlet transition grooves 133 corresponding to the gas outlet side 12 by using the pre-set processing parameters of the first array holes 131 and the second array holes 132. The drill bit is drilled into the predetermined depth from the gas outlet side 12 to form the gas outlet holes 14 communicating with the gas diffusion layer 13.

[0065] When the gas uniformizing ring groove 22 is processed, the processing position of the gas uniformizing ring groove 22 is determined according to the size parameters of the gas outlet side 12 and the pre-set size parameters of the gas uniformizing ring groove 22. The tool is circular with the center axis of the first base body as the processing reference center to process the gas uniformizing ring groove 22. In order to facilitate processing, the cross section of the gas uniformizing ring groove 22 is preferably rectangular. If the gas uniformizing ring groove 22 needs to be circular, a first ring groove with a semicircular cross section is first opened on the upper surface of the first base body, and a second ring groove with a semicircular cross section is then opened on the lower surface of the second base body. After the first base body and the second base body are spliced, the gas uniformizing ring groove 22 with a circular cross section is formed.

[0066] After the uniform gas ring groove 22 is formed, the machining position, machining direction and machining depth of the second gas guide channel 24 in the uniform gas ring groove 22 are determined, and the second gas guide channel 24 is preferably arranged perpendicular to the gas outlet side 12. The second gas guide channel 24 is machined to a predetermined depth in the direction perpendicular to the gas outlet side 12, that is, the second gas guide channel 24 communicating with the gas diffusion layer 13 is formed. The second gas guide channel 24 is preferably arranged in four groups. The distance between the gas outlet end of the second gas guide channel 24 and the center of the gas outlet side 12 is 2 / 5-3 / 5 of the radius of the gas outlet side 12. Preferably, the gas outlet end of the second gas guide channel 24 is located at 1 / 2 of the radius of the gas outlet side 12. When the second gas guide channel 24 is arranged perpendicular to the gas outlet side 12, the center radius of the uniform gas ring groove 22 is 1 / 2 of the radius of the gas outlet side 12.

[0067] In some embodiments, the step S301 of forming a gas flow acceleration port 26 between the uniform gas ring groove 22 and the second gas guide channel 24 is further included. The gas flow acceleration port 26 includes a converging section 261, a converging section 262 and an expanding section 263 connected in sequence. The cross-sectional size of the gas flow acceleration port 26 gradually decreases from the converging section 261 to the converging section 262, and gradually increases from the converging section 262 to the expanding section 263. The converging section 261 and the expanding section 263 are both arc-shaped and gradually change. The gas flow acceleration port 26 can be a pre-formed single piece. When machining, a fitting step compatible with the single piece is milled between the second gas guide channel 24 and the uniform gas ring groove 22. After the single piece is embedded in the fitting step, it is fixed in the second gas guide channel 24 and the uniform gas ring groove 22 by welding, thereby achieving acceleration of the gas flow.

[0068] S400, an air inlet channel 21 extending to the middle part is formed in the middle part of the air inlet side 11 of the second base, and a first gas guide channel 23 obliquely arranged and penetrating to the bottom end of the air inlet channel 21 is formed in the bottom of the second base to form a second intermediate body. The end of the first gas guide channel 23 can correspond to the communication of the uniform gas ring groove 22.

[0069] The machining depth of the air inlet channel 21 is determined according to the predetermined inclination angle of the first channel, and the machining of the first air guide channel 23 only needs to be drilled according to the predetermined inclination angle. It should be noted that in a preferred embodiment, the air outlet ends of the first air guide channels 23 are uniformly distributed on one side of the air distribution ring groove 22 close to the air inlet side 11, the air inlet ends of the second air guide channels 24 are uniformly distributed on one side of the air distribution ring groove 22 close to the air outlet side 12, and the air inlet end of each second air guide channel 24 corresponds to the middle part between the air outlet ends of the adjacent two first air guide channels 23. Taking four groups of first air guide channels 23 and four groups of second air guide channels 24 as an example, taking any position on the air distribution ring groove 22 as 0 position, the air outlet ends of the four groups of first air guide channels 23 are located at 0 position, 1 / 4 position, 1 / 2 position and 3 / 4 position on the upper part of the air distribution ring groove 22, and the air inlet ends of the four groups of second air guide channels 24 are located at 1 / 8 position, 3 / 8 position, 5 / 8 position and 7 / 8 position on the bottom of the air distribution ring groove 22. Thus, during machining, the machining position of the first air guide channel 23 on the second base can be determined according to the positional relationship between the second air guide channel 24 and the positioning hole.

[0070] In some embodiments, the step S401 of forming the first air guide channel 23 further includes forming a diffusion section 25 at the end of the air inlet channel 21 before forming the first air guide channel 23. The diffusion section 25 includes an arc-shaped diffusion port 251 expanding outward from the air inlet channel 21, and an arc-shaped shunt groove 252 opposite to the arc-shaped diffusion port 251 and opening towards the air inlet channel 21, and the air inlet end of the first air guide channel 23 is communicated with the arc-shaped shunt groove 252. It can be understood that the opening of the arc-shaped diffusion port 251 is downward, the opening of the arc-shaped shunt groove 252 is upward, the arc-shaped diffusion port 251 and the arc-shaped shunt groove 252 form a relatively clamped state, the curvature of the arc-shaped diffusion port 251 and the curvature of the arc-shaped shunt groove 252 can be the same, that is, they are combined to form a spherical groove, or they can be set to be different in order to reduce the machining difficulty. Generally, in order to facilitate the communication with the first air guide channel 23, the cross section of the arc-shaped shunt groove 252 is preferably semi-circular or close to semi-circular. During machining, the boring cutter can be inserted into the air inlet channel 21, and the diffusion section 25 can be machined by controlling the feed of the boring cutter.

[0071] S500, after the first intermediate body and the second intermediate body are butted and matched, welding is performed to form the spray body 10, and the ends of the first array hole 131 and the second array hole 132 are sealed.

[0072] During the assembly of the first intermediate body and the second intermediate body, a positioning pin can be inserted into the positioning hole. The first intermediate body and the second intermediate body are tightly fitted after being butted and matched, and then welding is performed to form a stable integrated structure, and then corresponding surface treatment is performed.

[0073] The sealing of the ends of the first array holes 131 and the second array holes 132 can be achieved by performing a repair welding operation on the ends of the first array holes 131 and the second array holes 132, or can be achieved by providing a sealing ring 15 that is adapted to the bottom of the spray body 10. The sealing ring 15 is a pre-processed single piece, and the sealing ring 15 is located outside the gas diffusion layer 13 and is welded and fixed with the spray body 10 as a whole to seal the first array holes 131 and the second array holes 132. In a preferred embodiment, an outer communication ring groove 16 is further reserved between the sealing ring 15 and the spray body 10, and the outer communication ring groove 16 communicates each of the first array holes 131 and the second array holes 132. Specifically, the cross section of the sealing ring 15 is provided in an L shape, and a welding step is formed on the outside of the gas diffusion layer 13 of the spray body 10. When the two end faces of the sealing ring 15 are welded and fixed with the welding step, the outer communication ring groove 16 is formed between the sealing ring 15 and the spray body 10. The height of the outer communication ring groove 16 should be greater than or equal to the height of the gas diffusion layer 13. Through the outer communication ring groove 16, the gas mixture can also be diffused and communicated outside the first array holes 131 and the second array holes 132, further improving the uniformity of gas diffusion.

[0074] In a third aspect, the present application discloses a semiconductor thin film deposition device, which comprises the integrated uniform flow gas phase shower head according to the first aspect. The gas outlet holes 14 of the integrated uniform flow gas phase shower head are connected to a process chamber of the semiconductor thin film deposition device. It can be understood that a heating plate is arranged at the bottom of the process chamber, and a wafer is placed on the heating plate and heated. The integrated uniform flow gas phase shower head is located directly above the heating plate, so that the gas mixture sprayed from the gas outlet holes 14 can directly act on the surface of the wafer.

[0075] The above embodiments are only illustrative of the principles and effects of the present application, and are not intended to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical thought of the present application should be covered by the claims of the present application.

Claims

1. An integrated uniform flow gas phase spray head, characterized in that, include: The spray body is integrally formed. The first side of the spray body is set as the air inlet side and the second side is set as the air outlet side. The spray body has a first array hole and a second array hole in which the grid pattern is crisscrossed and interconnected to form a gas diffusion layer. The gas diffusion layer has a plurality of air outlet transition grooves distributed in an array. Each air outlet transition groove is connected to an air outlet hole that passes through the air outlet side. as well as, An inlet flow channel assembly is used to guide the gas mixture from the gas supply equipment to the gas diffusion layer; The air intake channel assembly includes: an air intake channel penetrating the air intake side, a uniform air ring groove disposed in the spray body, a plurality of first air guide channels connecting the air intake channel and the uniform air ring groove, and a plurality of second air guide channels connecting the uniform air ring groove and the gas diffusion layer, wherein the distance between the outlet end of the second air guide channel and the center of the outlet side is 2 / 5 to 3 / 5 of the radius of the outlet side.

2. The integrated uniform flow gas phase spray head according to claim 1, characterized in that, The outlet ends of several first air guide channels are evenly distributed on the side of the uniform air ring groove near the air inlet side, and the inlet ends of several second air guide channels are evenly distributed on the side of the uniform air ring groove near the air outlet side. The inlet end of each second air guide channel corresponds to the middle part between the outlet ends of two adjacent first air guide channels.

3. The integrated uniform flow gas phase spray head according to claim 1 or 2, characterized in that, The air intake channel is provided with a diffusion section at its end. The diffusion section includes an arc-shaped diffusion port that expands outward from the air intake channel and an arc-shaped diverter groove that is connected to the arc-shaped diffusion port and has its opening facing the air intake channel. The air intake end of the first air guide channel is connected to the arc-shaped diverter groove.

4. The integrated uniform flow gas phase spray head according to claim 3, characterized in that, An airflow acceleration port is provided between the uniform air ring groove and the first air guiding channel and / or between the uniform air ring groove and the second air guiding channel. The airflow acceleration port includes a contraction section, a narrowing section and an expansion section connected in sequence. The cross-sectional size of the airflow acceleration port gradually decreases from the contraction section to the narrowing section and gradually increases from the narrowing section to the expansion section.

5. The integrated uniform flow gas phase spray head according to claim 1, characterized in that, The second air guide channel is configured to be perpendicular to the air outlet side.

6. The integrated uniform flow gas phase spray head according to claim 1, characterized in that, Both the first array hole and the second array hole penetrate the spray body, and a sealing ring is also sealed to the outside of the gas diffusion layer on the spray body. The sealing ring is used to seal the first array hole and the second array hole.

7. The integrated uniform flow gas phase spray head according to claim 6, characterized in that, An outer connecting ring groove is also provided between the encapsulation ring and the spray body, and the outer connecting ring groove connects each of the first array hole and the second array hole.

8. The integrated uniform flow gas phase spray head according to claim 1, characterized in that, The vent includes a vent channel and a vent diffuser connected in sequence. The vent channel is connected to the vent transition groove. The vent diffuser is a tapered hole that expands outward. The gas mixture is injected through adjacent vent diffusers and then crosses and mixes with each other on the flow path.

9. A process for forming an integrated uniform flow gas phase spray head as described in any one of claims 1-8, characterized in that, include: A first substrate and a second substrate are pre-formed and matched with each other. After the first substrate and the second substrate are relatively fitted together, a spray body is formed. The bottom of the first substrate is set as the air outlet side, and the top of the second substrate is set as the air inlet side. A first array of holes and a second array of holes are drilled in a grid pattern and interconnected in a direction parallel to the gas outlet side on the side near the first substrate to form a gas diffusion layer. The gas diffusion layer has a plurality of gas outlet transition grooves distributed in an array. An array of air outlet holes are drilled on the air outlet side of the first substrate and connected to the air outlet transition groove. After a ring-shaped uniform gas groove is opened at the bottom of the first substrate, several second gas guiding channels connected to the gas diffusion layer are evenly opened to form a first intermediate body. The distance between the air outlet end of the second gas guiding channel and the center of the air outlet side is controlled to be 2 / 5 to 3 / 5 of the radius of the air outlet side. An air intake channel extending to the middle of the air intake side of the second base is opened, and a first air guide channel inclined and extending to the bottom end of the air intake channel is opened at the bottom of the second base to form a second intermediate body, wherein the end of the first air guide channel can be connected to the uniform air ring groove. The first intermediate body and the second intermediate body are joined together and welded to form a spray body, and the ends of the first array hole and the second array hole are sealed.

10. A semiconductor thin film deposition apparatus, characterized in that, Includes an integrated uniform flow vapor phase spray head as described in any one of claims 1-8, wherein the outlet of the integrated uniform flow vapor phase spray head is connected to the process chamber of a semiconductor thin film deposition apparatus.

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