Silicon wafer sintering device and silicon wafer sintering equipment

Abstract

The invention provides a silicon wafer sintering device and equipment, and the device comprises a first sintering unit which comprises a first probe module and a first laser module, the first probe module is used for pressing a to-be-sintered silicon wafer, and the first laser module is used for carrying out the first sintering of the to-be-sintered silicon wafer; the first transfer unit comprises a first transfer driving mechanism and a first transfer module, and the first transfer driving mechanism is connected with the first transfer module to drive the first transfer module to transfer the to-be-sintered silicon wafer after the first time of sintering; the second sintering unit comprises a second probe module and a second laser module, the second probe module is used for pressing the to-be-sintered silicon wafer transferred by the first transfer module, and the second laser module is used for sintering the to-be-sintered silicon wafer for the second time. The to-be-sintered silicon wafer is sintered twice through the first sintering unit and the second sintering unit, and compared with'one-time laser sintering 'in the prior art, the photoelectric conversion rate of the silicon wafer is higher.

Description

Technical Field

[0001] This application relates to the field of silicon wafer processing technology, specifically to a silicon wafer sintering apparatus and silicon wafer sintering equipment. Background Technology

[0002] The contact resistance between the surface electrode and the back electrode of a silicon wafer cell has a significant impact on the fill factor and conversion efficiency. The lower the contact resistance, the higher the fill factor and conversion efficiency. To reduce the contact resistance on the semiconductor layer surface, laser sintering technology is used. The laser excites the charge carriers in the cell, which then flow directionally and form a loop under the action of the reverse voltage of the external electric field. When the loop current flows through the interface between the metal and the silicon wafer, a significant thermal effect is generated due to the relatively large contact resistance between the metal and the silicon wafer. The heat can further promote the mutual diffusion between the metal and the silicon wafer, thereby obtaining a better semiconductor surface metallization contact effect and a good passivation effect.

[0003] In existing technologies, sintering is usually considered complete after "one laser sintering". However, this method can result in incomplete sintering, leading to low photoelectric conversion efficiency of the silicon wafer. Summary of the Invention

[0004] This application mainly provides a silicon wafer sintering apparatus and silicon wafer sintering equipment, which can improve the photoelectric conversion efficiency of silicon wafers.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: providing a silicon wafer sintering apparatus, the silicon wafer sintering apparatus comprising: a first sintering unit, including a first probe module and a first laser module, the first probe module being used to press the silicon wafer to be sintered, and the first laser module being used to perform a first sintering on the silicon wafer to be sintered; a first transfer unit, including a first transfer drive mechanism and a first transfer module, the first transfer drive mechanism being connected to the first transfer module to drive the first transfer module to transfer the silicon wafer to be sintered after the first sintering; and a second sintering unit, including a second probe module and a second laser module, the second probe module being used to press the silicon wafer to be sintered transferred from the first transfer module, and the second laser module being used to perform a second sintering on the silicon wafer to be sintered.

[0006] In one specific embodiment, the silicon wafer sintering apparatus further includes a first conveying unit, which includes a first conveying drive mechanism and a first conveying support mechanism connected together to drive the first conveying support mechanism to rotate. A first receiving position, a first sintering position and a first transfer position are sequentially arranged along the rotation trajectory of the first conveying support mechanism.

[0007] In one specific embodiment, the silicon wafer sintering apparatus further includes a first alignment unit, which includes a first alignment module and a first transfer module. The first alignment module is used to receive the silicon wafer to be sintered and correct the position of the silicon wafer to be sintered. The first transfer module is used to transfer the silicon wafer to be sintered after correction by the first alignment module to the first receiving position.

[0008] In one specific embodiment, the silicon wafer sintering apparatus further includes a second conveying unit, which includes a second conveying drive mechanism and a second conveying support mechanism. The second conveying drive mechanism is connected to the second conveying support mechanism to drive the second conveying support mechanism to rotate. A second receiving position and a second sintering position are sequentially arranged along the rotation trajectory of the second conveying support mechanism. The first transfer module is used to transfer the silicon wafer to be sintered after the first sintering from the first transfer position to the second receiving position.

[0009] In one specific embodiment, a first transfer position and a second transfer position are provided along the movement trajectory of the first transfer module. The silicon wafer sintering device further includes a second alignment unit, which includes a second alignment module and a second transfer module. The second alignment module is used to correct the position of the silicon wafer to be sintered after the first sintering at the second transfer position. The second transfer module is used to transfer the silicon wafer to be sintered after correction by the second alignment module from the second transfer position to the second receiving position.

[0010] In one specific embodiment, a third transfer position is provided along the rotation trajectory of the second conveying and carrying mechanism. The silicon wafer sintering device also includes a second transfer unit, which includes a second transfer drive mechanism and a second transfer module. The second transfer drive mechanism is connected to the second transfer module to drive the second transfer module to move. The third transfer position and the unloading position are provided sequentially along the movement trajectory of the second transfer module.

[0011] In one specific embodiment, the first receiving position, the first transfer position, the second transfer position, the second receiving position, the third transfer position, and the unloading position are arranged sequentially along the first direction.

[0012] In one specific embodiment, the silicon wafer sintering apparatus further includes a first positioning unit, which is used to position the silicon wafer to be sintered at the first receiving position.

[0013] In one specific embodiment, the silicon wafer sintering apparatus further includes a second positioning unit, which is used to position the silicon wafer to be sintered after the first sintering at the second receiving position.

[0014] To solve the above-mentioned technical problems, another technical solution adopted in this application is: to provide a silicon wafer sintering equipment, the silicon wafer sintering equipment including a feeding device, a unloading device and the silicon wafer sintering equipment, the feeding device being used to feed the silicon wafer to be sintered, and the unloading device being used to unload the silicon wafer to be sintered after the second sintering.

[0015] The beneficial effects of this application are as follows: Unlike existing technologies, the silicon wafer sintering apparatus provided in this application includes: a first sintering unit comprising a first probe module and a first laser module, wherein the first probe module is used to press the silicon wafer to be sintered, and the first laser module is used to perform a first sintering on the silicon wafer to be sintered; a first transfer unit comprising a first transfer drive mechanism and a first transfer module, wherein the first transfer drive mechanism is connected to the first transfer module to drive the first transfer module to transfer the silicon wafer to be sintered after the first sintering; and a second sintering unit comprising a second probe module and a second laser module, wherein the second probe module is used to press the silicon wafer to be sintered transferred from the first transfer module, and the second laser module is used to perform a second sintering on the silicon wafer to be sintered. Through this implementation, the silicon wafer to be sintered is sintered twice by the first sintering unit and the second sintering unit, respectively. Compared to the "single laser sintering" in the prior art, the photoelectric conversion efficiency of the silicon wafer is higher. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0017] Figure 1 This is a three-dimensional structural schematic diagram of an embodiment of the silicon wafer sintering equipment provided in this application; Figure 2 yes Figure 1 A schematic diagram of the three-dimensional structure of the silicon wafer sintering equipment after the shell has been removed; Figure 3 yes Figure 2 A top view of the silicon wafer sintering apparatus; Figure 4 yes Figure 3 Schematic diagram of the layout of the silicon wafer sintering unit; Figure 5 yes Figure 2 A three-dimensional structural diagram of the feeding device; Figure 6 yes Figure 5 A three-dimensional structural diagram of the intermediate loading and unloading auxiliary module; Figure 7 yes Figure 6 A three-dimensional structural diagram of the central storage silo and its base plate; Figure 8 yes Figure 6 A three-dimensional structural diagram of the central storage drive unit; Figure 9 yes Figure 7 A schematic diagram of the front structure of the receiving component; Figure 10 yes Figure 5 A three-dimensional structural diagram of the loading and unloading module; Figure 11 yes Figure 5 A three-dimensional structural diagram of the loading and unloading transfer module; Figure 12 yes Figure 10 3D structural diagram of the loading and straightening module; Figure 13 yes Figure 3 Schematic diagram of the exploded structure of the first and second sintering units; Figure 14 yes Figure 3 A three-dimensional structural diagram of the first transfer unit in the middle; Figure 15 yes Figure 3 A three-dimensional structural diagram of the first transport unit; Figure 16 yes Figure 3 A top view of the first alignment unit; Figure 17 yes Figure 16 A three-dimensional structural diagram of the first alignment module in the middle; Figure 18 yes Figure 17 A schematic diagram of the exploded structure of the first alignment module in the middle; Figure 19 yes Figure 18 A three-dimensional structural diagram of the middle connecting rod assembly; Figure 20 yes Figure 18 A top view of multiple alignment components and linkage components; Figure 21 yes Figure 18 A three-dimensional structural diagram of the alignment component. Detailed Implementation

[0018] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be noted that the following embodiments are for illustrative purposes only and do not limit the scope of the application. Similarly, the following embodiments are only some, not all, embodiments of the present application, and all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application.

[0019] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indication will change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. A process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0020] In this document, the term "implementation" means that a specific feature, structure, or characteristic described in connection with an implementation may be included in at least one implementation of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same implementation, nor is it a separate or alternative implementation mutually exclusive with other implementations. It will be explicitly and implicitly understood by those skilled in the art that the implementations described herein can be combined with other implementations.

[0021] Please refer to the following: Figure 1 , Figure 2 and Figure 3 , Figure 1 This is a three-dimensional structural schematic diagram of an embodiment of the silicon wafer sintering equipment 100 provided in this application. Figure 2 yes Figure 1 A three-dimensional structural diagram of the silicon wafer sintering equipment 100 after removing the shell. Figure 3 yes Figure 2 A top view of the silicon wafer sintering apparatus 20. Figure 4 yes Figure 3A schematic block diagram showing the layout of the silicon wafer sintering device 20. In this embodiment, the silicon wafer sintering equipment 100 includes a feeding device 10, a silicon wafer sintering device 20, and a unloading device 30.

[0022] Please see Figure 5 and Figure 6 , Figure 5 yes Figure 2 A three-dimensional structural diagram of the feeding device 10. Figure 6 yes Figure 5 A three-dimensional structural diagram of the feeding auxiliary module 12. The feeding device 10 is used to feed the silicon wafer 110 to be sintered.

[0023] The feeding device 10 includes a feeding module 11, a feeding auxiliary module 12, and a feeding transfer module 13.

[0024] The feeding module 11 is used to receive the silicon wafer 110 to be sintered and to perform the feeding operation on the silicon wafer 110 to be sintered. Specifically, the feeding module 11 is used to feed the silicon wafer 110 to be sintered to the feeding position P1.

[0025] The feeding auxiliary module 12 has a storage space 101 and a receiving space 102. The storage space 101 is used to store spare silicon wafers for feeding, and the receiving space 102 is used to receive overflowing silicon wafers. In the event of untimely feeding, the spare silicon wafers stored in the storage space 101 can be used for feeding. In the event of feeding overflow, the overflowing silicon wafers can be received through the receiving space 102. This ensures the continuity of feeding and avoids the overflow of the silicon wafers 110 to be sintered.

[0026] The feeding and transfer module 13 is used to transfer the spare silicon wafer to the feeding module 11 so that the spare silicon wafer can be used as the silicon wafer 110 to be sintered. That is, when the feeding is not timely, the feeding and transfer module 13 transfers the spare silicon wafer to the feeding module 11 so that the feeding module 11 can continuously feed and ensure the continuity of feeding. Alternatively, the feeding and transfer module 13 is used to transfer the silicon wafer 110 to be sintered to the receiving space 102 so that the silicon wafer 110 to be sintered can be used as the overflow silicon wafer. That is, when the feeding overflow occurs, the feeding and transfer module 13 transfers the overflowed silicon wafer to be sintered to the receiving space 102.

[0027] Please refer to the following: Figure 7 and Figure 8 , Figure 7 yes Figure 6 A three-dimensional structural diagram of the central storage silo 1221 and the substrate 121. Figure 8 yes Figure 6A three-dimensional structural diagram of the material storage drive unit 1222 is shown. The material feeding auxiliary module 12 includes a base 121, a material storage component 122 and a material receiving component 123. The material storage component 122 is installed on the base 121 and forms the aforementioned material storage space 101. The material receiving component 123 is installed on the base 121 and forms the aforementioned material receiving space 102.

[0028] The storage component 122 includes a storage bin 1221 and a storage drive unit 1222. The storage bin 1221 forms a storage space 101. The storage drive unit 1222 is used to drive the loading spare silicon wafer to a preset discharge position. In this embodiment, that is, after the loading spare silicon wafer is driven to the preset discharge position, the loading transfer module 13 can transfer the loading spare silicon wafer to the loading module 11.

[0029] Furthermore, the storage drive unit 1222 includes a storage drive mechanism 122a and a pusher 122b. The storage drive mechanism 122a is connected to the pusher 122b to drive the pusher 122b in such a way as... Figure 7 and Figure 8 The Z-axis shown pushes the ready-to-load silicon wafer to the preset discharge position.

[0030] Optionally, in this embodiment, the storage assembly 122 further includes a carrier 1223, which is used to carry the spare silicon wafer and is movably disposed within the storage space 101. The pusher 122b is used to push the carrier 1223 to push the spare silicon wafer to the preset discharge position. That is, when the storage drive mechanism 122a drives the pusher 122b to move in the Z direction, the pusher 122b pushes the carrier 1223, thereby pushing the spare silicon wafer carried on the carrier 1223 to the preset discharge position. Since the spare silicon wafer is thin and fragile, the pusher 122b will not directly contact the spare silicon wafer through this arrangement, thereby avoiding the situation where the pusher 122b generates thrust that damages the spare silicon wafer.

[0031] Optionally, the base 121 is provided with a through hole 103 communicating with the storage space 101. The storage bin 1221 and the storage drive mechanism 122a are respectively disposed on opposite sides of the base 121, so that the pusher 122b passes through the through hole 103 to push the loading spare silicon wafer to the preset discharge position. For example, in this embodiment, the storage drive mechanism 122a is disposed on the lower side of the base 121, and the storage bin 1221 is disposed on the upper side of the base 121. This arrangement makes the layout of the entire storage assembly 122 more reasonable.

[0032] Please see Figure 9 , Figure 9 yes Figure 7The front view of the receiving assembly 123 is shown. The receiving assembly 123 includes a receiving component 1231 and an adjusting seat 1232. The adjusting seat 1232 is mounted on the base 121. The receiving component 1231 forms a receiving space 102 and is movably connected to the adjusting seat 1232 to adjust the receiving position and / or receiving angle of the receiving space 102. For example, in this embodiment, the receiving component 1231 is rotatably connected to the adjusting seat 1232 to adjust the receiving angle of the receiving space 102. In practical applications, after the adjustment is completed, bolts or other fasteners are used to fix the two together.

[0033] Furthermore, the loading auxiliary module 12 in this embodiment also includes a cleaning mechanism 124. The cleaning mechanism 124 is used to clean the loading spare silicon wafer to remove dust, residue and other substances from the loading spare silicon wafer. The specific cleaning method of the cleaning mechanism 124 is not limited. In this embodiment, blowing air is used to clean the loading spare silicon wafer as an example.

[0034] Please refer to the following: Figure 5 , Figure 6 and Figure 10 , Figure 10 yes Figure 5 A three-dimensional structural diagram of the loading module 11 is shown. The loading module 11 is used to load the silicon wafer to be sintered in the first direction X. The receiving space 102 and the storage space 101 are arranged sequentially along the second direction Y. The first direction X and the second direction Y are intersected. In this embodiment, the first direction X and the second direction Y are perpendicular to each other.

[0035] Optionally, there may be multiple feeding auxiliary modules 12, which are arranged sequentially along the first direction X. For example, in this embodiment, there are two feeding auxiliary modules 12.

[0036] The above-described configuration makes the layout of the entire feeding device 10 more reasonable and the structure more compact, thereby reducing the footprint of the entire device.

[0037] Furthermore, the feeding module 11 includes multiple sub-modules 11a, which are arranged sequentially along the first direction X. For example, in this embodiment, there are four sub-modules 11a, and each sub-module 11a can carry a silicon wafer to be sintered.

[0038] Please refer to the following: Figure 5 and Figure 11 , Figure 11 yes Figure 5A three-dimensional structural diagram of the loading and transfer module 13 is shown. The loading and transfer module 13 includes a transfer drive mechanism 131 and a transfer unit 132. The transfer unit 132 is used to adsorb the loading spare silicon wafers or silicon wafers to be sintered. The transfer drive mechanism 131 is connected to the transfer unit 132 to drive the transfer unit 132 to reciprocate in the second direction Y, thereby transferring the loading spare silicon wafers to the loading module 11 or transferring the overflowing silicon wafers to be sintered to the receiving space 102.

[0039] Optionally, there may be multiple feeding and transfer modules 13, which are arranged sequentially in the first direction X. For example, similar to the feeding auxiliary module 12 mentioned above, there are two feeding and transfer modules 13 in this embodiment, each corresponding to one of the two feeding auxiliary modules 12.

[0040] Please refer to the following: Figure 10 and Figure 12 , Figure 12 yes Figure 10 A three-dimensional structural diagram of the loading and straightening module 14 is shown. In this embodiment, the loading device 10 also includes the loading and straightening module 14, which includes a straightening drive mechanism 141 and a straightening component 142. The straightening drive mechanism 141 is connected to the straightening component 142 to drive the straightening component 142 to straighten the posture of the silicon wafer to be sintered, so as to avoid the situation where the posture is inaccurate and the loading fails.

[0041] The feeding and straightening module 14 also includes a transmission assembly 143, which includes a drive wheel 1431, a driven wheel 1432, and a transmission belt 1433. The drive wheel 1431 is connected to the straightening drive mechanism 141. The transmission belt 1433 is wound around the drive wheel 1431 and the driven wheel 1432 to form a first transmission part 143a and a second transmission part 143b that are arranged oppositely and move in opposite directions. There are two straightening members 142. One of the two straightening members 142 is connected to the first transmission part 143a, and the other of the two straightening members 142 is connected to the second transmission part 143b.

[0042] Specifically, the silicon wafer to be sintered on the feeding module 11 is located between two straightening members 142. When the straightening drive mechanism 141 drives the drive wheel 1431 to rotate, it drives the driven wheel 1432 and the transmission belt 1433 to rotate. At this time, the first transmission part 143a and the second transmission part 143b move in opposite directions, thereby causing the two straightening members 142 to move closer or further away from each other. In the process of moving closer to each other, the silicon wafer to be sintered between the two straightening members 142 is pushed to move, thereby performing posture correction.

[0043] Please refer to the following: Figure 3 and Figure 13 , Figure 13 yes Figure 3The exploded structural diagram of the first sintering unit 21 and the second sintering unit 23 is shown. The silicon wafer sintering device 20 includes the first sintering unit 21, the first transfer unit 22 and the second sintering unit 23.

[0044] The first sintering unit 21 includes a first probe module 21a and a first laser module 21b. The first probe module 21a is used to press the silicon wafer 110 to be sintered, and the first laser module 21b is used to perform the first sintering of the silicon wafer 110.

[0045] Furthermore, the first probe module 21a includes a first sub-probe module 210a and a second sub-probe module 210b, and the first laser module 21b includes a first sub-laser module 210c and a second sub-laser module 210d. The first sub-probe module 210a is used to press the silicon wafer 110 to be sintered, the first sub-laser module 210c is used to sinter a portion of the area to be sintered on the silicon wafer 110, and then the second sub-probe module 210b presses the area that has been sintered, and the second sub-laser module 210d sinters the other portion of the area to be sintered, thereby completing the first sintering.

[0046] Please refer to the following: Figure 3 and Figure 14 , Figure 14 yes Figure 3 A three-dimensional structural diagram of the first transfer unit 22 is shown. The first transfer unit 22 includes a first transfer drive mechanism 221 and a first transfer module 222. The first transfer drive mechanism 221 is connected to the first transfer module 222 to drive the first transfer module 222 to transfer the silicon wafer 110 to be sintered after the first sintering.

[0047] Optionally, in this embodiment, the first transfer module 222 uses a suction cup to adsorb the silicon wafer 110 to be sintered after the first sintering, thereby reducing the fragmentation rate of the silicon wafer 110 to be sintered. The first transfer drive mechanism 221 uses a motor to drive the first transfer module 222 to transfer the silicon wafer 110 to be sintered after the first sintering.

[0048] Further reading Figure 13 The second sintering unit 23 includes a second probe module 23a and a second laser module 23b. The second probe module 23a is used to press the silicon wafer 110 to be sintered transferred from the first transfer module 222, and the second laser module 23b is used to perform a second sintering on the silicon wafer 110. In this embodiment, the silicon wafer 110 is sintered twice by the first sintering unit 21 and the second sintering unit 23, respectively. Compared with the "single laser sintering" in the prior art, the photoelectric conversion efficiency of the silicon wafer is higher.

[0049] The second probe module 23a includes a third sub-probe module 230a and a fourth sub-probe module 230b, and the second laser module 23b includes a third sub-laser module 230c and a fourth sub-laser module 230d. The third sub-probe module 230a is used to press the silicon wafer 110 to be sintered, the third sub-laser module 230c is used to sinter a portion of the area to be sintered on the silicon wafer 110, and then the fourth sub-probe module 230b presses the area that has been sintered, and the fourth sub-laser module 230d sinters the other portion of the area to be sintered, thereby completing the second sintering.

[0050] Optionally, in this embodiment, the first sintering unit 21 is sintered using a "surface scanning" method with laser scanning surface by surface, and the second sintering unit 23 can be sintered using either a "surface scanning" method or a "line scanning" method with laser scanning line by line.

[0051] Please refer to the following: Figure 3 , Figure 4 and Figure 15 , Figure 15 yes Figure 3 A three-dimensional structural schematic diagram of the first transport unit 24 is shown. In this embodiment, the silicon wafer sintering apparatus 20 also includes a first transport unit 24. The first transport unit 24 includes a first transport driving mechanism 241 and a first transport bearing mechanism 242 connected together to drive the first transport bearing mechanism 242 to rotate. A first receiving position P2, a first sintering position P3 and a first transfer position P4 are arranged sequentially along the rotation trajectory of the first transport bearing mechanism 242.

[0052] Specifically, the first transport carrier mechanism 242 receives the silicon wafer 110 to be sintered at the first receiving position P2, and then the first transport drive mechanism 241 drives the first transport carrier mechanism 242 to rotate, so that the silicon wafer 110 to be sintered is transported to the first sintering position P3. After the first sintering unit 21 performs the first sintering of the silicon wafer 110 to be sintered at the first sintering position P3, the first transport drive mechanism 241 drives the first transport carrier mechanism 242 to continue rotating, so that the silicon wafer 110 to be sintered is transported to the first transfer position P4.

[0053] In this embodiment, the first sintering position P3 includes a first sub-position P31 and a second sub-position P32. That is, the first sub-probe module 210a presses the silicon wafer 110 to be sintered at the first sub-position P31, and after the first sub-laser module 210c is sintered, the first transport drive mechanism 241 transports the silicon wafer 110 to be sintered to the second sub-position P32. The second sub-probe module 210b presses the silicon wafer 110 to be sintered at the second sub-position P32, and after the second sub-laser module 210d is sintered, it transports the silicon wafer 110 to the first transfer position P4.

[0054] Please refer to the following: Figure 3, Figure 4 and Figure 16 , Figure 16 yes Figure 3 The first alignment unit 25 is shown in the top view. In this embodiment, the silicon wafer sintering apparatus 20 also includes a first alignment unit 25. The first alignment unit 25 includes a first alignment module 251 and a first transfer module 252. The first alignment module 251 is used to receive the silicon wafer 110 to be sintered and correct its position to avoid inaccurate position of the silicon wafer 110, which would cause some positions of the silicon wafer 110 to be sintered to be undetectable by the laser, resulting in sintering failure. The first transfer module 252 is used to transfer the silicon wafer 110 to be sintered after correction by the first alignment module 251 to the first receiving position P2.

[0055] Specifically, in this embodiment, the first alignment module 251 is disposed at the loading position P1. The loading device 10 loads the silicon wafer 110 to be sintered onto the first alignment module 251, and then the first alignment module 251 corrects the position of the silicon wafer 110 to be sintered.

[0056] Please refer to the following: Figure 17 and Figure 18 , Figure 17 yes Figure 16 A three-dimensional structural diagram of the first alignment module 251. Figure 18 yes Figure 17 The exploded structural diagram of the first alignment module 251 in this embodiment shows that the first alignment module 251 includes a bearing component 2511, multiple alignment components 2512 and a connecting rod component 2513.

[0057] The carrier component 2511 includes an alignment carrier mechanism 251a, which is used to support the silicon wafer 110 to be sintered.

[0058] Furthermore, multiple alignment components 2512 are respectively disposed on different sides of the silicon wafer 110 to be sintered, so as to enclose and form an alignment space 104. The alignment space 104 is used to accommodate the silicon wafer 110 to be sintered. For example, in this embodiment, the silicon wafer 110 to be sintered is rectangular, so the number of alignment components 2512 is four, namely alignment component 25a, alignment component 25b, alignment component 25c, and alignment component 25d.

[0059] Please refer to the following: Figure 19 and Figure 20 , Figure 19 yes Figure 18 A three-dimensional structural diagram of the middle connecting rod assembly 2513. Figure 20 yes Figure 18A top view of multiple alignment components 2512 and linkage assembly 2513 is provided. The linkage assembly 2513 includes an alignment drive mechanism 2513a, a transmission component 2513b, and multiple linkages 25130. The transmission component 2513b is mounted on the alignment drive mechanism 2513a. Each linkage 25130 is rotatably connected to the transmission component 2513b and each alignment component 2512, respectively. This allows the alignment drive mechanism 2513a to drive the transmission component 2513b to rotate, thereby causing the multiple alignment components 2512 to move closer to each other in the direction near the silicon wafer 110 to be sintered, or to move apart in the direction away from the silicon wafer 110 to be sintered. When multiple alignment components 2512 approach each other in the direction close to the silicon wafer 110 to be sintered, they can push the silicon wafer 110 to be sintered in the alignment space 104 to move, thereby moving the silicon wafer 110 to be sintered to a preset accurate position, completing the alignment and correction of the position of the silicon wafer 110 to be sintered. After the alignment and correction are completed, the multiple alignment components 2512 separate from each other in the direction away from the silicon wafer 110 to be sintered, thereby releasing the silicon wafer 110 to be sintered. With this setting, only one driving mechanism (alignment driving mechanism 2513a) is needed, which simplifies the structure of the first alignment module 251 and reduces the cost.

[0060] For example, in this embodiment, there are four connecting rods 25130, namely connecting rods 251c, 251d, 251e, and 251f. Connecting rods 251c, 251d, 251e, and 251f are rotatably connected to the transmission component 2513b. Connecting rod 251c is rotatably connected to the alignment component 25a, connecting rod 251d is rotatably connected to the alignment component 25b, connecting rod 251e is rotatably connected to the alignment component 25c, and connecting rod 251f is rotatably connected to the alignment component 25d. When the alignment drive mechanism 2513a drives the transmission component 2513b, as shown in the figure... Figure 20 When the alignment mechanism rotates clockwise, it drives the alignment component 25a to move upward at A1 via link 251c, drives the alignment component 25b to move upward at B1 via link 251d, drives the alignment component 25c to move upward at A2 via link 251e, and drives the alignment component 25d to move upward at B2 via link 251f. This causes the alignment components 25a, 25b, 25c, and 25d to move closer to each other in the direction closest to the silicon wafer 110 to be sintered. Similarly, when the alignment drive mechanism 2513a drives the transmission component 2513b to move in the direction of... Figure 20When rotated counterclockwise, alignment component 25a moves upward at A2, alignment component 25b moves upward at B2, alignment component 25c moves upward at A1, and alignment component 25d moves upward at B1, thereby causing alignment components 25a, alignment component 25b, alignment component 25c, and alignment component 25d to separate from each other in a direction away from the silicon wafer 110 to be sintered.

[0061] Optionally, the alignment assembly 2512 is provided with alignment wheels 250, that is, each alignment assembly 2512 is provided with alignment wheels 250, the specific number of which is not specified. The alignment wheels 250 are rotatably connected to the alignment assembly 2512. With this setting, during the alignment and correction process, the alignment wheels 250 contact the silicon wafer 110 to be sintered, and the alignment wheels 250 can rotate relative to the alignment assembly 2512, which reduces the movement resistance of the silicon wafer 110 to be sintered during the alignment and correction process, and avoids damage to the silicon wafer 110 to be sintered due to excessive resistance.

[0062] Please refer to the following: Figure 20 and Figure 21 , Figure 21 yes Figure 18 The three-dimensional structural diagram of the alignment component 25a is shown. In this embodiment, the first alignment module 251 also includes multiple guide components 2514. For example, in this embodiment, there are four guide components 2514, namely guide component 2514a, guide component 2514b, guide component 2514c and guide component 2514d.

[0063] Each guide assembly 2514 includes a slider 25141 and a guide 25142. The slider 25141 is rotatably connected to the connecting rod 25130 and is mounted on the guide 25141. The alignment assembly 2512 is mounted on the slider 25141 so that the alignment assembly 2512 is close to or far away from the silicon wafer 110 to be sintered in the guiding direction of the guide 25142. That is, the guiding direction of the guide 25142 of guide assembly 2514a is direction A1 and direction A2, the guiding direction of the guide 25142 of guide assembly 2514b is direction B1 and direction B2, the guiding direction of the guide 25142 of guide assembly 2514c is direction A1 and direction A2, and the guiding direction of the guide 25142 of guide assembly 2514d is direction B1 and direction B2.

[0064] Furthermore, the alignment assembly 2512 includes an alignment mechanism 250a and a support member 250b. The alignment mechanism 250a is mounted on the sliding member 25141 and is provided with a first guide portion 105. The support member 250b is provided with a first guide portion 106. The first guide portion 105 and the first guide portion 106 are configured to cooperate so that the alignment mechanism 250a approaches or moves away from the silicon wafer 110 to be sintered under the cooperative action of the first guide portion 105 and the first guide portion 106.

[0065] In this embodiment, one of the first guide portion 105 and the first guide portion 106 is a guide protrusion, and the other of the first guide portion 105 and the first guide portion 106 is a guide groove. In this embodiment, the first guide portion 105 is a guide protrusion and the first guide portion 106 is a guide groove.

[0066] Optionally, the extension direction of the guide groove of the first guide portion 106 is inclined relative to the guiding direction of the guide member 25142.

[0067] Specifically, the alignment mechanism 250a is slidably connected to the slider 25141 so that the alignment mechanism 250a can slide relative to the slider 25141 when it is close to or away from the silicon wafer 110 to be sintered.

[0068] For example, taking the extension direction C of the guide groove of the alignment component 25a and the guiding direction A1 of the guide member 25142 of the guide component 2514a as examples, when the slider 25141 moves in the guiding direction A1 of the guide member 25142, due to the cooperation of the first guide part 105 and the first guide part 106, the alignment mechanism 250a needs to move in the extension direction C of the guide groove. At this time, the alignment mechanism 250a slides relative to the slider 25141 in direction D to make a lifting movement, that is, the alignment mechanism 250a moves closer to the silicon wafer 110 to be sintered. During the process, the height of the alignment mechanism 250a gradually increases. Similarly, as the alignment mechanism 250a moves away from the silicon wafer 110 to be sintered, its height decreases. Therefore, in practical applications, before alignment and correction, the height of the alignment mechanism 250a is lower than that of the alignment support mechanism 251a. After the silicon wafer 110 to be sintered is supported on the alignment support mechanism 251a, the alignment mechanism 250a moves closer to the silicon wafer 110 to be sintered and gradually increases. After alignment and correction are completed, the alignment mechanism 250a moves away from the silicon wafer 110 to be sintered and gradually decreases.

[0069] It is understandable that the above description takes the alignment component 25a and guide component 2514a as examples. The structure and principle of the alignment component 25b and guide component 2514b, alignment component 25c and guide component 2514c, alignment component 25d and guide component 2514d are the same, and will not be repeated here.

[0070] It should be noted that the structure of the first transfer module 252 in this embodiment is the same as that of the first transfer unit 22 in 14. For the specific principle, please refer to the first transfer unit 22, which will not be repeated here.

[0071] Further reading Figure 18 The carrier component 2511 in this embodiment also includes a carrier driving mechanism 251b, which is connected to the alignment carrier mechanism 251a to drive the silicon wafer 110 to be sintered to a preset initial position in the alignment space 104, thereby improving the positional accuracy of alignment and correction.

[0072] Further reading Figure 3 , Figure 4 and Figure 15 The silicon wafer sintering apparatus 20 in this embodiment also includes a second transport unit 26. The second transport unit 26 includes a second transport drive mechanism (not shown in the figure) and a second transport carrier mechanism (not shown in the figure). The second transport drive mechanism is connected to the second transport carrier mechanism to drive the second transport carrier mechanism to rotate. A second receiving position P5 and a second sintering position P6 are arranged sequentially along the rotation trajectory of the second transport carrier mechanism. The first transfer module 222 is used to transfer the silicon wafer 110 to be sintered after the first sintering from the first transfer position P4 to the second receiving position P5.

[0073] Specifically, after the first transfer module 222 transfers the silicon wafer 110 to be sintered after the first sintering from the first transfer position P4 to the second receiving position P5, the second transport drive mechanism drives the second transport carrier mechanism to rotate, so that the silicon wafer 110 to be sintered is transported to the second sintering position P6, and the second sintering unit 23 performs a second sintering on the silicon wafer 110 to be sintered at the second sintering position P6.

[0074] In this embodiment, the second sintering position P6 includes a third sub-position P61 and a fourth sub-position P62. That is, the third sub-probe module 230a presses the silicon wafer 110 to be sintered at the third sub-position P61, and after the third sub-laser module 230c is sintered, the second transport drive mechanism transports the silicon wafer 110 to be sintered to the fourth sub-position P62, and the fourth sub-probe module 230b presses the silicon wafer 110 to be sintered at the fourth sub-position P62.

[0075] It should be noted that the structure of the second transport unit 26 in this embodiment is similar to... Figure 15 The structure of the first transport unit 24 is the same as that of the first transport unit 24. For the specific principle, please refer to the first transport unit 24, which will not be repeated here.

[0076] Furthermore, a first transfer position P4 and a second transfer position P7 are provided along the movement trajectory of the first transfer module 222. The silicon wafer sintering apparatus 20 in this embodiment also includes a second alignment unit 27. The second alignment unit includes a second alignment module (not shown in the figure) and a second transfer module (not shown in the figure). The second alignment module is used to correct the position of the silicon wafer to be sintered after the first sintering at the second transfer position P7. The second transfer module is used to transfer the silicon wafer to be sintered after correction by the second alignment module from the second transfer position P7 to the second receiving position P5. That is, before the second sintering, in this embodiment, the position of the silicon wafer 110 to be sintered is aligned and corrected again by the second alignment unit including 27 to avoid inaccurate position of the silicon wafer 110 to be sintered, which would cause some positions of the silicon wafer 110 to be sintered to be undetectable by the laser during the second sintering, thus causing sintering failure.

[0077] It should be noted that the structure of the second alignment unit 27 in this embodiment is the same as that of the first transport unit 24 described above. For the specific principle, please refer to the description of the first transport unit 24, which will not be repeated here.

[0078] Furthermore, a third transfer position P8 is provided along the rotation trajectory of the second conveying and carrying mechanism. The silicon wafer sintering apparatus 20 in this embodiment also includes a second transfer unit 28, a second transfer drive mechanism, and a second transfer module. The second transfer drive mechanism is connected to the second transfer module to drive the movement of the second transfer module. The third transfer position P8 and the unloading position P9 are sequentially provided along the movement trajectory of the second transfer module. That is, after the second sintering unit 23 completes the second sintering of the silicon wafer 110 to be sintered, the second conveying and carrying mechanism transports the silicon wafer 110 to be sintered to the third transfer position P8, and then the second transfer unit 28 transfers the silicon wafer 110 to be sintered from the third transfer position P8 to the unloading position P9.

[0079] It should be noted that the structure of the second transfer unit 28 in this embodiment is the same as that of the first transfer unit 22 described above. For the specific principle, please refer to the description of the first transfer unit 22, which will not be repeated here.

[0080] Among them, the first receiving position P2, the first transfer position P4, the second transfer position P7, the second receiving position P5, the third transfer position P8 and the unloading position P9 are arranged in sequence along the first direction X. Through this positional layout, the various structures of the silicon wafer sintering device 20 in this embodiment are more reasonable and the structure is more compact, thereby reducing the footprint of the entire device.

[0081] Further reading Figure 2 and Figure 3The silicon wafer sintering apparatus 20 in this embodiment further includes a first positioning unit 29 and a second positioning unit 290. The first positioning unit 29 is used to position the silicon wafer 110 to be sintered at the first receiving position P2, and the second positioning unit 290 is used to position the silicon wafer 110 to be sintered after the first sintering at the second receiving position P5.

[0082] Optionally, both the first positioning unit 29 and the second positioning unit 290 can be positioned using CCD positioning. For example, in this embodiment, the first sintering unit 21 uses a "surface scanning" method for laser sintering, so the first positioning unit 29 can use one CCD for center positioning. The second sintering unit 23 uses a "line scanning" method for laser sintering, so the second positioning unit 290 can use four CCDs for four-corner positioning.

[0083] Further reading Figure 2 and Figure 4 The feeding device 30 is used to feed the silicon wafer 110 to be sintered after the second sintering. In this embodiment, the feeding device 30 receives the silicon wafer 110 to be sintered after the second sintering at the feeding position P9, and then feeds the silicon wafer 110 to be sintered after the second sintering.

[0084] In this embodiment, the unloading device 30 and the loading device 10 have the same structure and principle. The only difference is that the loading device 10 is used to load the unsintered silicon wafer 110 to be sintered, while the unloading device 30 is used to unload the silicon wafer 110 to be sintered after the second sintering.

[0085] For example, for the feeding device 30, the storage space 101 is used to store the spare silicon wafers after the second sintering, and the receiving space 102 is used to receive the silicon wafers 110 that overflow after the second sintering.

[0086] Further reading Figure 1 and Figure 8 The silicon wafer sintering equipment 100 in this embodiment also includes a housing 40, which has a receiving space (not shown in the figure) and an opening (not shown in the figure) communicating with the receiving space. The base 121 is movably disposed in the receiving space so that the storage component 122 and the receiving component 123 can be moved into or out of the receiving space through the opening, thereby adding spare silicon wafers in the storage space and / or recovering overflowing silicon wafers in the receiving space. For example, in this embodiment, the base 121 can be pulled by the handle 121a connected to the base 121, so that the storage component 122 and the receiving component 123 can be moved into or out of the receiving space through the opening.

[0087] The beneficial effects of this application are as follows: Unlike existing technologies, the silicon wafer sintering apparatus provided in this application includes: a first sintering unit comprising a first probe module and a first laser module, wherein the first probe module is used to press the silicon wafer to be sintered, and the first laser module is used to perform a first sintering on the silicon wafer to be sintered; a first transfer unit comprising a first transfer drive mechanism and a first transfer module, wherein the first transfer drive mechanism is connected to the first transfer module to drive the first transfer module to transfer the silicon wafer to be sintered after the first sintering; and a second sintering unit comprising a second probe module and a second laser module, wherein the second probe module is used to press the silicon wafer to be sintered transferred from the first transfer module, and the second laser module is used to perform a second sintering on the silicon wafer to be sintered. Through this implementation, the silicon wafer to be sintered is sintered twice by the first sintering unit and the second sintering unit, respectively. Compared to the "single laser sintering" in the prior art, the photoelectric conversion efficiency of the silicon wafer is higher.

[0088] The above description is only a partial embodiment of this application and does not limit the scope of protection of this application. Any equivalent device or equivalent process transformation made based on the content of this application specification and drawings, or directly or indirectly applied to other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A silicon wafer sintering apparatus, characterized in that, The silicon wafer sintering apparatus includes: The first sintering unit includes a first probe module and a first laser module. The first probe module is used to press the silicon wafer to be sintered, and the first laser module is used to perform the first sintering on the silicon wafer to be sintered. The first transfer unit includes a first transfer drive mechanism and a first transfer module. The first transfer drive mechanism is connected to the first transfer module to drive the first transfer module to transfer the silicon wafer to be sintered after the first sintering. The second sintering unit includes a second probe module and a second laser module. The second probe module is used to press the silicon wafer to be sintered transferred from the first transfer module, and the second laser module is used to perform a second sintering on the silicon wafer to be sintered.

2. The silicon wafer sintering apparatus according to claim 1, characterized in that, The silicon wafer sintering apparatus further includes a first conveying unit, which includes a first conveying drive mechanism and a first conveying support mechanism connected together to drive the first conveying support mechanism to rotate. A first receiving position, a first sintering position and a first transfer position are sequentially arranged along the rotation trajectory of the first conveying support mechanism.

3. The silicon wafer sintering apparatus according to claim 2, characterized in that, The silicon wafer sintering apparatus further includes a first alignment unit, which includes a first alignment module and a first transfer module. The first alignment module is used to receive the silicon wafer to be sintered and correct the position of the silicon wafer to be sintered. The first transfer module is used to transfer the silicon wafer to be sintered after correction by the first alignment module to the first receiving position.

4. The silicon wafer sintering apparatus according to claim 2, characterized in that, The silicon wafer sintering apparatus further includes a second conveying unit, which includes a second conveying drive mechanism and a second conveying support mechanism. The second conveying drive mechanism is connected to the second conveying support mechanism to drive the second conveying support mechanism to rotate. A second receiving position and a second sintering position are sequentially arranged along the rotation trajectory of the second conveying support mechanism. The first transfer module is used to transfer the silicon wafer to be sintered after the first sintering from the first transfer position to the second receiving position.

5. The silicon wafer sintering apparatus according to claim 4, characterized in that, The first transfer position and the second transfer position are provided along the movement trajectory of the first transfer module. The silicon wafer sintering device also includes a second alignment unit, which includes a second alignment module and a second transfer module. The second alignment module is used to correct the position of the silicon wafer to be sintered after the first sintering at the second transfer position. The second transfer module is used to transfer the silicon wafer to be sintered after correction by the second alignment module from the second transfer position to the second receiving position.

6. The silicon wafer sintering apparatus according to claim 5, characterized in that, A third transfer position is also provided along the rotation trajectory of the second conveying and carrying mechanism. The silicon wafer sintering device also includes a second transfer unit, which includes a second transfer drive mechanism and a second transfer module. The second transfer drive mechanism is connected to the second transfer module to drive the second transfer module to move. The third transfer position and the unloading position are provided sequentially along the movement trajectory of the second transfer module.

7. The silicon wafer sintering apparatus according to claim 6, characterized in that, The first receiving position, the first transfer position, the second transfer position, the second receiving position, the third transfer position, and the unloading position are arranged sequentially along the first direction.

8. The silicon wafer sintering apparatus according to claim 2, characterized in that, The silicon wafer sintering apparatus further includes a first positioning unit, which is used to position the silicon wafer to be sintered at the first receiving position.

9. The silicon wafer sintering apparatus according to claim 4, characterized in that, The silicon wafer sintering apparatus further includes a second positioning unit, which is used to position the silicon wafer to be sintered after the first sintering at the second receiving position.

10. A silicon wafer sintering device, characterized in that, The silicon wafer sintering equipment includes a feeding device, a discharging device, and a silicon wafer sintering device according to any one of claims 1 to 9. The feeding device is used to feed the silicon wafer to be sintered, and the discharging device is used to discharge the silicon wafer to be sintered after the second sintering.

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