Methods, apparatus, equipment and media for radiation compensation in RTP equipment

Abstract

This invention discloses an emissivity compensation method, apparatus, device, and medium for RTP equipment, belonging to the field of semiconductor equipment technology. The emissivity compensation method includes the following steps: acquiring historical data of different wafers located at a first workstation; acquiring a first reflection signal in the first cavity state; acquiring a first emissivity of the wafer in the first workstation and a second emissivity of the wafer in the second workstation; acquiring a second reflection signal in the cavity state, and calculating a cavity reflection signal attenuation value based on the first and second reflection signals; calculating an emissivity compensation value; and calculating a final emissivity based on the first emissivity and the emissivity compensation value. Both the first and second workstations are located within the cavity, with the first workstation below the second workstation. This invention compensates for emissivity by comprehensively considering the emissivity at different locations and the cavity reflection signal attenuation value, avoiding inaccurate temperature measurements and ensuring the accuracy of both emissivity and temperature measurements.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor equipment technology, and specifically relates to a method, apparatus, device and medium for emissivity compensation of RTP equipment. Background Technology

[0002] RTP (Rapid Thermal Processing) equipment is a semiconductor device that rapidly heats wafers to complete high-temperature processes. The process results of this type of equipment require high accuracy in temperature measurement, and it typically uses non-contact temperature probes to collect infrared signals for infrared thermography of the wafer. Measuring the emissivity of the measured object is crucial in infrared thermography. The internal environment of RTP equipment is complex, and in some processes, wafers may develop precipitates at high temperatures, forming coatings on internal process components such as temperature probes, reflectors, and quartz top plates. This affects the accuracy of emissivity measurement, which in turn affects the accuracy of temperature measurement and the electrical properties of the wafer processing.

[0003] Currently, RTP equipment characterizes changes in the temperature measurement system by periodically monitoring the film thickness performance of specific processes, and ensures consistency in process performance by adjusting the temperature offset (the offset setting of the target temperature, the same below). When the cavity is severely contaminated, maintenance such as opening the cavity for wiping and calibrating the emissivity is performed.

[0004] The above method requires frequent monitoring and adjustment of the temperature offset, as well as offline film thickness measurement to ensure process consistency. This method is cumbersome, time-consuming, and may require multiple adjustments, impacting the online operating time of the equipment. Furthermore, the wafer emissivity measured using this method is already offset and cannot reflect the actual wafer emissivity. If adjustments are not made promptly, it may lead to deviations in process results, affecting wafer product quality. Summary of the Invention

[0005] Based on the technical problems existing in the prior art, the present invention provides a method, apparatus, device and medium for emissivity compensation of RTP equipment.

[0006] According to a first aspect of the present invention, a method for emissivity compensation in a rapid heat treatment device is provided, comprising the following steps:

[0007] S1: Acquire historical data of several different wafers when they are located at the first work station, the historical data including historical reflection signals and historical emissivity;

[0008] S2: Obtain the first reflected signal when the cavity is in its first state;

[0009] S3: Obtain the first emissivity of several wafers at the first work station and the second emissivity of several wafers at the second work station;

[0010] S4: Obtain several second reflection signals of a preset secondary cavity state, and calculate the cavity reflection signal attenuation value based on the first reflection signal obtained in step S2 and the several second reflection signals;

[0011] S5: The emissivity compensation value is calculated based on the several sets of historical working position data obtained in step S1, the first emissivity obtained in step S3, the second emissivity obtained in step S3, and the cavity reflection signal attenuation value obtained in step S4.

[0012] S6: Calculate the final emissivity based on the second emissivity obtained in step S3 and the emissivity compensation value obtained in step S5;

[0013] Both the first workstation and the second workstation are located inside the cavity, with the first workstation located below the second workstation.

[0014] A further improvement of the present invention is that the cavity state is such that there is no wafer inside the cavity, the cavity is in a hot standby state, and the cavity is sealed.

[0015] A further improvement of the present invention is that, in step S4, the following steps are specifically included:

[0016] S41: Acquire several second reflection signals of a preset subcavity state;

[0017] S42: Calculate the correlation entropy of each second reflection signal obtained in step S41 relative to other second reflection signals;

[0018] S43: Select the largest correlation entropy from the correlation entropy obtained in step S42, and use the second reflection signal corresponding to the largest correlation entropy as the cavity reflection signal;

[0019] S44: Calculate the cavity reflection signal attenuation value based on the first reflection signal obtained in step S2 and the cavity reflection signal obtained in step S43.

[0020] A further improvement of the present invention is that S5 includes the following steps:

[0021] S51: Based on the historical data of several working positions obtained in step S1, the first slope of the linear equation corresponding to the historical reflection signal and historical emissivity is calculated using the least squares method.

[0022] S52: The second slope and emissivity intercept of the linear equation corresponding to the first emissivity and the second emissivity obtained in step S3 are calculated using the least squares method.

[0023] S53: The emissivity compensation value is calculated based on the first slope obtained in step S51, the second slope obtained in step S52, and the cavity reflection signal attenuation value obtained in step S4.

[0024] A further improvement of the present invention is that the different wafers mentioned in S1 are wafers with different emissivity.

[0025] A further improvement of the present invention is that when the ratio of the cavity reflection signal attenuation value to the cavity reflection signal is greater than the validity threshold, a maintenance signal is generated, sent to the host computer, and an alarm is issued.

[0026] A further improvement of the present invention is that the final emissivity and the second emissivity are linearly related, with the second slope obtained in step S52 as the slope, the difference between the emissivity intercept obtained in step S52 and the emissivity compensation value as the intercept, and the second emissivity obtained in step S3 as the independent variable.

[0027] According to a second aspect of the present invention, an emissivity compensation device for a rapid heat treatment equipment is provided, which employs the aforementioned emissivity compensation method for a rapid heat treatment equipment, comprising:

[0028] The historical data acquisition module is used to acquire historical data of several different wafers when they are located at the first work station. The historical data includes historical reflection signals and historical emissivity.

[0029] The first data acquisition module is used to acquire the first reflected signal when the cavity is in its first state.

[0030] The second data acquisition module is used to acquire the first emissivity of several wafers at the first work station and the second emissivity of several wafers at the second work station;

[0031] The attenuation value calculation module is used to acquire a number of second reflection signals in a preset secondary cavity state, and calculate the cavity reflection signal attenuation value based on the first reflection signal and the number of second reflection signals.

[0032] The compensation module is used to calculate the emissivity compensation value based on several sets of historical data of working positions, the first emissivity, the second emissivity, and the cavity reflection signal attenuation value.

[0033] The output module is used to calculate the final emissivity based on the first emissivity and the emissivity compensation value.

[0034] According to a third aspect of the present invention, an electronic device is provided, comprising:

[0035] One or more processors;

[0036] Storage device for storing one or more computer programs;

[0037] When the one or more computer programs are executed by the one or more processors, the one or more processors implement an emissivity compensation method for a rapid thermal processing device as described above.

[0038] According to a fourth aspect of the present invention, a computer-readable storage medium is provided, on which a computer program is stored, wherein when the computer program is executed by a processor, it implements an emissivity compensation method for a rapid thermal processing device as described above.

[0039] Compared with the prior art, the above-mentioned technical solution of the present invention has the following beneficial technical effects:

[0040] 1. This invention compensates for emissivity by combining the emissivity at different locations and the attenuation value of the cavity reflection signal. This avoids the situation where the non-contact temperature measuring instrument is inaccurate due to contamination such as wafer deposits, which in turn leads to inaccurate temperature measurement. This ensures the accuracy of emissivity and temperature measurement, reduces the frequency of adjusting the offset in offline processes, and improves equipment uptime.

[0041] 2. By obtaining the emissivity of the first and second workstations, this invention avoids the problem of inaccurate emissivity measurement caused by wafer deformation after heating at the first workstation, thus improving the accuracy of compensation calculation.

[0042] 3. This invention selects the value with the largest correlation entropy as the second reflection signal by calculating the correlation entropy, and can still accurately measure the wafer emissivity under the complex environment of RTP equipment and the influence of wafer deposits.

[0043] 4. This invention determines the effective range of emissivity compensation and the criteria for equipment maintenance by setting an effectiveness threshold, which ensures the timeliness of equipment maintenance while avoiding the waste of time due to excessive maintenance. Attached Figure Description

[0044] The accompanying drawings are provided to better understand the invention and are not intended to unduly limit the scope of the invention. Wherein:

[0045] Figure 1 This is a flowchart of an emissivity compensation method for a rapid heat treatment device according to the present invention;

[0046] Figure 2 This is a structural block diagram of an emissivity compensation device for a rapid heat treatment equipment according to the present invention;

[0047] Figure 3 This is a schematic diagram illustrating the application of an emissivity compensation device for a rapid heat treatment equipment according to the present invention.

[0048] Figure 4 This is a schematic diagram of the computer system in an embodiment of the present invention;

[0049] Figure 5 This is a comparison diagram of the signal before and after filtering in an embodiment of the present invention.

[0050] The reference numerals in the attached diagram are: 1. Radiant heating lamp; 2. Lifting and supporting needle; 3. Non-contact temperature probe. Detailed Implementation

[0051] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of the present invention, including various details to aid understanding. These details should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the invention. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0052] Example 1

[0053] like Figure 1 As shown, the present invention provides an emissivity compensation method for rapid thermal processing (RTP) equipment, which includes the following steps:

[0054] S1: Acquire historical data of several different wafers when they are located at the first work station, the historical data including historical reflection signals and historical emissivity;

[0055] S2: Obtain the first reflected signal when the cavity is in its first state;

[0056] S3: Obtain the first emissivity of several wafers at the first work station and the second emissivity of several wafers at the second work station;

[0057] S4: Obtain several second reflection signals of a preset secondary cavity state, and calculate the cavity reflection signal attenuation value based on the first reflection signal obtained in step S2 and the several second reflection signals;

[0058] S5: The emissivity compensation value is calculated based on the several sets of historical working position data obtained in step S1, the first emissivity obtained in step S3, the second emissivity obtained in step S3, and the cavity reflection signal attenuation value obtained in step S4.

[0059] S6: Calculate the final emissivity based on the second emissivity obtained in step S3 and the emissivity compensation value obtained in step S5;

[0060] Both the first workstation and the second workstation are located inside the cavity, with the first workstation located below the second workstation.

[0061] Specifically, the principle of emissivity measurement based on the reflected signal is as follows: when light or radiation energy irradiates an object, the following equation exists:

[0062] absorptivity+reflectivity+transmissivi=1;

[0063] In the formula, absorptivity is the absorption rate; reflectivity is the reflectance; and transmissivity is the transmittance. That is, absorptivity + reflectance + transmittance = 1.

[0064] Choosing the wavelength band with zero wafer transmittance as the measurement band for emissivity measurement, the above equation is subtracted by removing transmittance to obtain the following equation:

[0065] absorptivity + reflectivity = 1; that is, absorptivity + reflectivity = 1.

[0066] According to the second law of thermodynamics, the rate at which an object absorbs energy is equal to its emissivity, that is:

[0067] absorptivity = emissivity;

[0068] In summary, the reflectivity of the object under test can be obtained by measuring the reflectivity of the object to a specific signal, or by measuring the reflected signal of the object when the total emitted energy is known. Therefore, the method in this invention is feasible.

[0069] Specifically, in step S1, several wafers with known emissivity (historical emissivity), but with different emissivity, are sequentially placed into the cavity, placing the wafers in the first working position. The power of the radiant heating lamp is set to idle power (thermal standby power, i.e., maintaining a low power to prevent the cavity from heating up further). The reflection signals of the wafers in this state are recorded sequentially as historical reflection signals. This step is generally performed using an internal algorithm in non-contact thermometers, which calculates the emissivity based on the recorded reflection signal values. Typically, this step can use an HLwafer (two wafers commonly used in RTP equipment; Hwafer typically has an emissivity of around 0.92, and Lwafer typically has an emissivity of around 0.23, both referring to the performance at the common temperature measurement wavelength of RTP equipment, the same below) and a standard bareSiwafer (emissivity around 0.681). This is just one application example of this method and is not intended to limit the invention. The historical reflection signals and historical emissivity are matched one-to-one and saved as historical data.

[0070] Specifically, the cavity state is characterized by the absence of wafers within the cavity, the cavity being in a hot standby state, and the cavity being sealed.

[0071] Specifically, S4 includes the following steps:

[0072] S41: Acquire several second reflection signals of a preset subcavity state;

[0073] S42: Calculate the correlation entropy of each second reflection signal obtained in step S41 relative to other second reflection signals;

[0074] S43: Select the largest correlation entropy from the correlation entropy obtained in step S42, and use the second reflection signal corresponding to the largest correlation entropy as the cavity reflection signal;

[0075] S44: Calculate the cavity reflection signal attenuation value based on the first reflection signal obtained in step S2 and the cavity reflection signal obtained in step S43.

[0076] Specifically, during the actual process, when the wafer transfer gap or the machine is not performing a process, and the cavity meets the conditions of cavity closure, hot standby state, and no wafer, the reflected signal at this time is recorded as several second reflected signals. The preset number of times is determined according to the working conditions, and the number of the several second reflected signals is determined according to the filter width. If the filter width is a positive integer k, then k-1 data points from the current reflected signal forward and a total of k data points from the current reflected signal are selected as several second reflected signals.

[0077] Specifically, in S42, the formula for calculating the information entropy is as follows:

[0078]

[0079] In the formula, x represents the value of the currently selected data, w is an adjustment parameter used to adjust the range of the calculated result, which can be selected according to the specific signal value and processing platform. Q represents the correlation entropy of the currently selected data.

[0080] Specifically, filtering is achieved by calculating and selecting the maximum correlation entropy, thus removing non-Gaussian noise from the reflected signal, primarily the pulse signal introduced by the radiant heating lamp and the reflected signal measurement. For example... Figure 5 This is an example comparing signals before and after filtering.

[0081] Specifically, in S44, the formula for calculating the attenuation value of the cavity reflected signal is as follows:

[0082] r=YR;

[0083] In the formula, R is the cavity reflection signal obtained in step S43, Y is the first reflection signal obtained in step S2, and r is the cavity reflection signal attenuation value.

[0084] Specifically, S5 includes the following steps:

[0085] S51: Based on the historical data of several working positions obtained in step S1, the first slope of the linear equation corresponding to the historical reflection signal and historical emissivity is calculated using the least squares method.

[0086] S52: The second slope and emissivity intercept of the linear equation corresponding to the first emissivity and the second emissivity obtained in step S3 are calculated using the least squares method.

[0087] S53: The emissivity compensation value is calculated based on the first slope obtained in step S51, the second slope obtained in step S52, and the cavity reflection signal attenuation value obtained in step S4.

[0088] Specifically, in S51, the historical reflected signal is used as the independent variable and the historical emissivity is used as the dependent variable. The first slope and the first intercept are calculated using the least squares method, as shown in the following formula:

[0089] emissivity = a * reflection + b;

[0090] In the formula, emissivity is the historical emissivity, reflection is the historical reflection signal, a is the first slope, and b is the first intercept.

[0091] Specifically, in S52, the second emissivity is used as the dependent variable and the first emissivity as the independent variable. The second slope and the second intercept are calculated using the least squares method, as shown in the following formula:

[0092] Down.emissivity=a1*Middle.emissivity+b1;

[0093] In the formula, Down.emissivity is the first emissivity, Middle.emissivity is the second emissivity, a1 is the second slope, and b1 is the second intercept. The first station is the main position during wafer processing, but the wafer at the first station is prone to deformation due to uneven heating, resulting in deviations in emissivity measurement. The second station is the initial position of the wafer, which has not undergone deformation, and the deviation in emissivity measurement is smaller than that at the first station. Therefore, the emissivity at the second station is added for slope calculation to improve the accuracy of the compensation value.

[0094] Specifically, in S53, the formula for calculating the emissivity compensation value is as follows:

[0095] Emierr = a * a1 * r * c;

[0096] In the formula, Emierr is the emissivity compensation value, a is the first slope, a1 is the second slope, r is the cavity reflection signal attenuation value, and c is the equalization coefficient. The equalization coefficient c is fine-tuned according to the compensation effect, and the equalization coefficient c∈[0.8,1].

[0097] Specifically, in S6, the formula for calculating the final emissivity is as follows:

[0098] E=a1*Middle.emissivity+b1-Emierr;

[0099] In the formula, E represents the final emissivity. This final emissivity is uploaded to the user's display screen.

[0100] Specifically, when the second reflected signal attenuates to a certain extent, the subsequent reflected signals are relatively weak. To avoid the reflected signal continuing to decrease, which could lead to the probe measurement value being too low and causing algorithm failure, or the probe, cavity, etc. being affected by wafer deposits for a long time, resulting in cleaning difficulties, an effectiveness threshold is set for judgment. When the ratio of the cavity reflected signal attenuation value to the cavity reflected signal is greater than the effectiveness threshold, that is, r / R is greater than the effectiveness threshold, it is judged that timely cavity opening maintenance is required, and the relevant components inside the cavity are cleaned. The algorithm will no longer be executed, and the host computer will prompt that maintenance action is required.

[0101] Specifically, the validity threshold is preferably 0.25, which can be set by the user according to the actual situation.

[0102] Example 2

[0103] like Figure 2 As shown, an emissivity compensation device for a rapid heat treatment equipment is provided, which adopts the emissivity compensation method for a rapid heat treatment equipment described in Embodiment 1, and includes:

[0104] The historical data acquisition module is used to acquire historical data of several different wafers when they are located at the first work station. The historical data includes historical reflection signals and historical emissivity.

[0105] The first data acquisition module is used to acquire the first reflected signal when the cavity is in its first state.

[0106] The second data acquisition module is used to acquire the first emissivity of several wafers at the first work station and the second emissivity of several wafers at the second work station;

[0107] The attenuation value calculation module is used to acquire a number of second reflection signals in a preset secondary cavity state, and calculate the cavity reflection signal attenuation value based on the first reflection signal and the number of second reflection signals.

[0108] The compensation module is used to calculate the emissivity compensation value based on the several sets of historical working position data, the first emissivity, the second emissivity, and the cavity reflection signal attenuation value.

[0109] The output module is used to calculate the final emissivity based on the second emissivity and the emissivity compensation value.

[0110] Specifically, the attenuation value calculation module includes:

[0111] The second reflection signal acquisition submodule is used to acquire several second reflection signals of a preset subcavity state;

[0112] The correlation entropy calculation submodule calculates the correlation entropy of each second reflection signal relative to other second reflection signals.

[0113] The filtering submodule is used to select the largest correlation entropy from the correlation entropy and use the second reflection signal corresponding to the largest correlation entropy as the cavity reflection signal.

[0114] The attenuation calculation submodule is used to calculate the attenuation value of the cavity reflection signal based on the first reflection signal and the cavity reflection signal.

[0115] Specifically, in the relevant entropy calculation submodule, the formula for calculating the information entropy is as follows:

[0116]

[0117] In the formula, x represents the value of the currently selected data, w is an adjustment parameter used to adjust the range of the calculated result, which can be selected according to the specific signal value and processing platform. Q represents the correlation entropy of the currently selected data.

[0118] Specifically, in S44, the formula for calculating the attenuation value of the cavity reflected signal is as follows:

[0119] r=YR;

[0120] In the formula, R is the cavity reflection signal obtained in step S43, Y is the first reflection signal obtained in step S2, and r is the cavity reflection signal attenuation value.

[0121] Specifically, the compensation module includes:

[0122] The first linear equation calculation submodule is used to calculate the first slope of the linear equation corresponding to the historical reflection signal and historical emissivity based on the several sets of historical working position data using the least squares method.

[0123] The second linear equation calculation submodule is used to calculate the second slope and emissivity intercept of the linear equation corresponding to the first emissivity and the second emissivity using the least squares method based on the first emissivity and the second emissivity.

[0124] The compensation value calculation submodule is used to calculate the emissivity compensation value based on the first slope, the second slope, and the cavity reflection signal attenuation value.

[0125] Specifically, in the first linear equation calculation submodule, the historical reflected signal is used as the independent variable and the historical emissivity is used as the dependent variable. The first slope and the first intercept are calculated using the least squares method, as shown in the following formula:

[0126] emissivity = a * reflection + b;

[0127] In the formula, emissivity is the historical emissivity, reflection is the historical reflection signal, a is the first slope, and b is the first intercept.

[0128] Specifically, in the second linear equation calculation submodule, the second radiance is used as the dependent variable and the first radiance as the independent variable. The second slope and the second intercept are calculated using the least squares method, as shown in the following formula:

[0129] Down.emissivity=a1*Middle.emissivity+b1;

[0130] In the formula, Down.emissivity is the first emissivity, Middle.emissivity is the second emissivity, a1 is the second slope, and b1 is the second intercept. The first station is the main position during wafer processing, but the wafer at the first station is prone to deformation due to uneven heating, resulting in deviations in emissivity measurement. The second station is the initial position of the wafer, which has not undergone deformation, and the deviation in emissivity measurement is smaller than that at the first station. Therefore, the emissivity at the second station is added for slope calculation to improve the accuracy of the compensation value.

[0131] Specifically, in the compensation value calculation submodule, the formula for calculating the emissivity compensation value is as follows:

[0132] Emierr = a * a1 * r * c;

[0133] In the formula, Emierr is the emissivity compensation value, a is the first slope, a1 is the second slope, r is the cavity reflection signal attenuation value, and c is the equalization coefficient. The equalization coefficient c is fine-tuned according to the compensation effect, and the equalization coefficient c∈[0.8,1].

[0134] Specifically, in the output module, the formula for calculating the final emissivity is as follows:

[0135] E=a1*Middle.emissivity+b1-Emierr;

[0136] In the formula, E represents the final emissivity. This final emissivity is uploaded to the user's display screen.

[0137] Specifically, such as Figure 3 As shown, several radiant heating lamps 1 are provided above the cavity for heating the wafer. Lifting pins 2 are located at both ends below the wafer to control its position within the cavity. Several non-contact temperature probes 3 are located below the center of the wafer, at least one of which is capable of measuring emissivity based on reflected signals. The wafer is placed at a first station and a second station. During the process, the wafer is first placed at the second station for preheating, and then placed at the first station for the main process.

[0138] This invention also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements any of the above-described methods for emissivity compensation in rapid thermal processing equipment.

[0139] The present invention also provides an electronic device. The electronic device of this invention includes: one or more processors; a storage device for storing one or more computer programs; when the one or more computer programs are executed by the one or more processors, the one or more processors implement the emissivity compensation method for a rapid thermal processing device provided by the present invention. Reference is made below. Figure 4 This illustrates a schematic diagram of the structure of a computer system 800 suitable for implementing embodiments of the present invention in an electronic device. For example... Figure 4 As shown, the computer system 800 includes a central processing unit (CPU) 801, which can perform various appropriate actions and processes based on a computer program stored in a read-only memory (ROM) 802 or a computer program loaded from a storage section 808 into a random access memory (RAM) 803. The RAM 803 also stores various computer programs and data required for the operation of the computer system 800. The CPU 801, ROM 802, and RAM 803 are interconnected via a bus 804. An input / output (I / O) interface 805 is also connected to the bus 804.

[0140] The following components are connected to I / O interface 805: an input section 806 including a keyboard, mouse, etc.; an output section 807 including a cathode ray tube (CRT), liquid crystal display (LCD), etc., and speakers, etc.; a storage section 808 including a hard disk, etc.; and a communication section 809 including a network interface card such as a LAN card, modem, etc. The communication section 809 performs communication processing via a network such as the Internet. A drive 810 is also connected to I / O interface 805 as needed. A removable medium 811, such as a disk, optical disk, magneto-optical disk, semiconductor memory, etc., is installed on drive 810 as needed so that computer programs read from it can be installed into storage section 808 as needed.

[0141] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can occur depending on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A method for emissivity compensation in rapid heat treatment equipment, characterized in that, The method comprises the following steps: S1: obtaining historical data of a plurality of different wafers in a first working position, wherein the historical data comprises historical reflection signals and historical emissivity; S2: obtaining a first reflection signal in a first cavity state; S3: obtaining first emissivity of a plurality of wafers in the first working position and second emissivity of the plurality of wafers in a second working position; S4: obtaining a plurality of second reflection signals in a preset cavity state, and calculating a cavity reflection signal attenuation value according to the first reflection signal obtained in step S2 and the plurality of second reflection signals; S5: calculating an emissivity compensation value according to the plurality of sets of working position historical data obtained in step S1, the first emissivity obtained in step S3, the second emissivity obtained in step S3, and the cavity reflection signal attenuation value obtained in step S4; S6: calculating a final emissivity according to the second emissivity obtained in step S3 and the emissivity compensation value obtained in step S5; S4 comprises the following steps: S41: obtaining a plurality of second reflection signals in a preset cavity state; S42: calculating a correlation entropy of each second reflection signal obtained in step S41 relative to other second reflection signals; S43: selecting a maximum correlation entropy from the correlation entropies obtained in step S42, and taking the second reflection signal corresponding to the maximum correlation entropy as a cavity reflection signal; S44: calculating a cavity reflection signal attenuation value according to the first reflection signal obtained in step S2 and the cavity reflection signal obtained in step S43; S5 comprises the following steps: S51: calculating a first slope of a linear equation corresponding to the historical reflection signals and the historical emissivity by using a least square method according to the plurality of sets of working position historical data obtained in step S1; S52: calculating a second slope and an emissivity intercept of a linear equation corresponding to the first emissivity and the second emissivity by using a least square method according to the first emissivity obtained in step S3 and the second emissivity obtained in step S3; S53: calculating an emissivity compensation value according to the first slope obtained in step S51, the second slope obtained in step S52, and the cavity reflection signal attenuation value obtained in step S4; The first working position and the second working position are both located in a cavity, and the first working position is below the second working position; the first working position is a position of wafer processing, and the second working position is an initial position of the wafer; the wafer is more prone to deformation due to uneven heating in the first working position than in the second working position.

2. The emissivity compensation method for a rapid thermal processing apparatus according to claim 1, wherein The cavity state is that there is no wafer in the cavity, and the cavity is in a hot standby state; the cavity is sealed.

3. The emissivity compensation method for a rapid thermal processing apparatus according to claim 1, wherein The different wafers in step S1 are wafers with different emissivity.

4. The emissivity compensation method for a rapid thermal processing apparatus according to claim 1, wherein When the ratio of the cavity reflection signal attenuation value to the cavity reflection signal is greater than an effectiveness threshold value, a maintenance required signal is generated and sent to an upper computer, and an alarm is issued.

5. The emissivity compensation method for a rapid thermal processing apparatus according to claim 1, wherein The final emissivity and the second emissivity are in a linear relationship, the second slope obtained in step S52 is used as a slope, the difference between the emissivity intercept obtained in step S52 and the emissivity compensation value is used as an intercept, and the second emissivity obtained in step S3 is used as an independent variable.

6. A radiation compensation device for a rapid thermal processing apparatus, which employs the radiation compensation method for a rapid thermal processing apparatus according to any one of claims 1 to 5, characterized by It comprises: a historical data acquisition module configured to acquire historical data of a plurality of wafers at the first station, the historical data including historical reflection signals and historical emissivity values; a first data acquisition module configured to acquire a first reflection signal at a first cavity state; a second data acquisition module configured to acquire first emissivity values of the plurality of wafers at the first station and second emissivity values of the plurality of wafers at the second station; an attenuation value calculation module configured to acquire a plurality of second reflection signals at a preset cavity state, and to calculate a cavity reflection signal attenuation value based on the first reflection signal and the plurality of second reflection signals; a compensation module configured to calculate an emissivity compensation value based on a plurality of sets of historical data of working positions, the first emissivity values, the second emissivity values, and the cavity reflection signal attenuation value; an output module configured to calculate a final emissivity value based on the first emissivity values and the emissivity compensation value.

7. An electronic device, comprising: comprise: one or more processors; a storage device configured to store one or more computer programs; when the one or more computer programs are executed by the one or more processors, the one or more processors are caused to implement a method for emissivity compensation of a rapid thermal processing apparatus as claimed in any one of claims 1-5.

8. A computer-readable storage medium having stored thereon a computer program, characterized in that, the computer programs, when executed by a processor, implement a method for emissivity compensation of a rapid thermal processing apparatus as claimed in any one of claims 1-5.

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