Fan-out type packaging device high-entropy brazing filler metal and preparation method and application thereof

Abstract

The invention provides a fan-out type packaging device high-entropy brazing filler metal and a preparation method and application of the fan-out type packaging device high-entropy brazing filler metal, and the fan-out type packaging device high-entropy brazing filler metal is prepared from, by mass, 0.2%-1.0% of Ga-21. 5 In-10 Sn ternary alloy, 98.0%-99.7% of Sn-3. 8 Ag-0.7 Cu ternary alloy and 0.1%-1.0% of Co modified SiC nanowires. According to the method, a Ga-21. 5 In-10 Sn low-temperature alloy and a Sn-3. 8 Ag-0.7 Cu alloy are prepared at first, then the Ga-21. 5 In-10 Sn alloy and the Sn-3. 8 Ag-0.7 Cu alloy are mixed according to different proportions and smelted in a heating furnace, Sn-Ag-Cu-Ga-In high-entropy brazing filler metal is prepared, and finally Co is added to modify SiC nanowires so as to strengthen the high-entropy alloy. According to the invention, the Ga-21. 5 In-10Sn alloy is added into the Sn-3. 8Ag-0.7 Cu alloy, so that the melting temperature of the Sn-3. 8Ag-0.7 Cu alloy can be obviously reduced, and the welding process of electronic devices can be reduced. The Co-modified SiC nanowires are added into the high-entropy brazing filler metal, it is guaranteed that in the reflow soldering process of an external magnetic field, the Co-modified SiC nanowires are arranged according to the direction of magnetic induction lines under the action of the magnetic field, regular distribution of the Co-modified SiC nanowires in welding spots is kept, the welding spots are strengthened, the service life of the welding spots is remarkably prolonged, and the high-reliability interconnection requirement of a fan-out type packaging device is met.

Description

Technical Field

[0001] This invention relates to the field of fan-out packaging device technology, and particularly to a high-entropy solder for fan-out packaging devices, its preparation method, and its application. Background Technology

[0002] Fan-out packaging is an advanced packaging technology that uses a redistribution layer (RDL) to replace the traditional substrate for signal interconnection. Its core feature is expanding the wiring area by reconfiguring the carrier, overcoming the limitations of chip size on the number of I / Os. Compared to traditional packaging technologies, fan-out packaging offers better electrical performance, heat dissipation, and smaller size. Fan-out packaging has also become a key packaging technology for extending Moore's Law, with its key challenges lying in achieving small bump spacing and higher interconnect density. Bumps are typically made of low-melting-point metals as interconnect materials, and solder joints are formed through reflow soldering to achieve physical and electronic connections between devices. However, during service, due to the mismatch in the coefficient of linear expansion of the materials, the solder joint area is prone to becoming a stress concentration zone. Prolonged service can lead to the initiation and propagation of bump cracks, resulting in fatigue failure of the entire fan-out packaged device. Summary of the Invention

[0003] The purpose of this invention is to provide a high-entropy solder for fan-out packaged devices, its preparation method, and its application. The invention prepares a Sn-Ag-Cu-Ga-In high-entropy solder by mixing and melting two alloys, Ga-21.5In-10Sn and Sn-3.8Ag-0.7Cu, in different proportions. Finally, Co-modified SiC nanowires are added. The resulting high-entropy solder for fan-out packaged devices enables high-quality connections of fan-out packaged devices under low-temperature conditions and improves the fatigue life of the solder joints.

[0004] The technical problem solved by this invention is achieved by the following technical solution.

[0005] This invention proposes a high-entropy solder for fan-out type packaging devices, which, by mass percentage, comprises 0.2~1.0wt.% Ga-21.5In-10Sn ternary alloy, 98.0~99.7wt.% Sn-3.8Ag-0.7Cu ternary alloy, and 0.1~1.0wt.% Co-modified SiC nanowires.

[0006] This invention proposes a method for preparing high-entropy solder for fan-out packaged devices, comprising the following steps: S1. Obtain the Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy respectively; S2. The Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy are mixed and melted to obtain the Sn-Ag-Cu-Ga-In high-entropy solder. After adding the Co-modified SiC nanowires, a high-entropy solder for fan-out packaging devices is obtained.

[0007] This invention proposes the application of the high-entropy solder in the soldering of fan-out packaged devices.

[0008] The beneficial effects of the high-entropy solder for the fan-out type packaging device of the present invention, its preparation method, and its application are as follows: This invention uses high-purity (>99.9%) Sn, Ag, Cu, In, and Ga metal ingots, and sequentially places them into a heating furnace in order of increasing melting point to prepare Ga-21.5In-10Sn low-temperature alloy (melting temperature 10℃) and Sn-3.8Ag-0.7Cu alloy (melting temperature 217℃). Then, the Ga-21.5In-10Sn alloy and Sn-3.8Ag-0.7Cu alloy are mixed in different proportions and melted in a heating furnace to prepare Sn-Ag-Cu-Ga-In high-entropy solder. Finally, Co-modified SiC nanowires are added to strengthen the high-entropy alloy. Adding Ga-21.5In-10Sn alloy to Sn-3.8Ag-0.7Cu alloy significantly reduces its melting temperature, which is beneficial for simplifying the soldering process of electronic devices. Co-modified SiC nanowires enhance the solder joints and improve their fatigue life. Simultaneously, during the welding process, the Sn-Ag-Cu-Ga-In high-entropy alloy reacts with the Cu metal layer to form the Cu3Sn / Cu9Ga4 phase. The Cu9Ga4 phase exhibits significant enrichment in the interfacial region, altering the traditional Cu6Sn5 solder. The high mixing enthalpy and hysteretic diffusion effect of the high-entropy solder directly influence the diffusion of interfacial elements, inhibiting the growth of Cu3Sn / Cu9Ga4 and ensuring the reliability of the solder joint during service.

[0009] The Sn-Ag-Cu-Ga-In high-entropy low-temperature solder prepared in this invention has a melting temperature controlled at around 210℃, enabling interconnection of fan-out packaged devices. Based on the hysteresis diffusion effect and lattice distortion control of the high-entropy solder, the rapid growth of intermetallic compounds in the interface layer ensures that the solder joints maintain high performance during long-term service. Adding Co-modified SiC nanowires to the high-entropy solder ensures that during reflow soldering under an applied magnetic field, the Co-modified SiC nanowires align according to the direction of the magnetic induction lines, maintaining a regular distribution within the solder joint, strengthening the solder joint, significantly improving its lifespan, and meeting the high-reliability interconnection requirements of fan-out packaged devices. Attached Figure Description

[0010] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0011] Figure 1 This is a comparison chart of the solder joint fatigue life of the high-entropy solder of the fan-out type packaged device in Embodiment 1 of the present invention and the Sn-3.8Ag-0.7Cu ternary alloy in Comparative Example 1. Detailed Implementation

[0012] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0013] The following provides a detailed description of the high-entropy solder for the fan-out type packaging device according to embodiments of the present invention, its preparation method, and its application.

[0014] This invention provides a high-entropy solder for fan-out type packaging devices, which, by mass percentage, comprises 0.2~1.0wt.% Ga-21.5In-10Sn ternary alloy, 98.0~99.7wt.% Sn-3.8Ag-0.7Cu ternary alloy, and 0.1~1.0wt.% Co-modified SiC nanowires.

[0015] This invention optimizes the composition of a Sn-Ag-Cu-Ga-In high-entropy low-temperature solder. The resulting high-entropy solder for fan-out packaged devices enables high-reliability interconnection of these devices via reflow soldering under an external magnetic field. For fan-out packaged device interconnection, using Sn-3.8Ag-0.7Cu solder for metallurgical interconnection easily leads to the formation of Cu3Sn / Cu6Sn5 hard and brittle intermetallic compounds at the interface after soldering. During service, due to rapid element diffusion, these hard and brittle intermetallic compounds significantly thicken. Furthermore, due to the mismatch in the coefficients of linear expansion, the solder joint becomes a stress concentration zone, and the hard and brittle intermetallic compounds are prone to cracking, causing fatigue failure of the solder joint. Adding a Ga-21.5In-10Sn ternary low-temperature alloy to the Sn-3.8Ag-0.7Cu ternary alloy significantly reduces its melting temperature, which is beneficial for lowering the soldering process temperature of fan-out packaged devices and reducing residual soldering stress. Simultaneously, during the welding process, the Sn-Ag-Cu-Ga-In high-entropy alloy reacts with the Cu metal layer to form the Cu3Sn / Cu9Ga4 phase. The Cu9Ga4 phase exhibits significant enrichment at the interface, altering the traditional Cu6Sn5 solder. The high mixing enthalpy and hysteretic diffusion effect of the high-entropy solder directly influence the diffusion of interfacial elements, inhibiting the growth of Cu3Sn / Cu9Ga4 and ensuring the reliability of the solder joint during service. Co-modified SiC nanowires strengthen the solder joint, resisting deformation caused by stress concentration and improving its fatigue life.

[0016] This invention provides a method for preparing high-entropy solder for fan-out packaged devices, comprising the following steps: S1. Obtain the Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy respectively.

[0017] Further, in a preferred embodiment of the present invention, the preparation steps of the Ga-21.5In-10Sn ternary alloy are as follows: Sn metal ingots, In metal ingots, and Ga metal ingots are sequentially placed into a heating furnace for melting in order of increasing melting point of each element to obtain the Ga-21.5In-10Sn ternary alloy, wherein the purity of the Sn metal ingots, In metal ingots, and Ga metal ingots is greater than 99.9%. Preferably, the melting temperature is 500℃ and the melting time is 30 min.

[0018] Further, in a preferred embodiment of the present invention, the preparation steps of the Sn-3.8Ag-0.7Cu ternary alloy are as follows: Sn metal ingots, Ag metal ingots, and Cu metal ingots are sequentially placed into a heating furnace for melting in order of increasing melting point of each element to obtain the Sn-3.8Ag-0.7Cu ternary alloy, wherein the purity of the Sn metal ingots, Ag metal ingots, and Cu metal ingots is greater than 99.9%. Preferably, the melting temperature is 500℃ and the melting time is 30 min.

[0019] S2. The Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy are mixed and melted to obtain the Sn-Ag-Cu-Ga-In high-entropy solder. After adding the Co-modified SiC nanowires, a high-entropy solder for fan-out packaging devices is obtained.

[0020] Further, in a preferred embodiment of the present invention, the mixing and melting step comprises: repeatedly melting the Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy at 290~310℃ 3~5 times. Preferably, the Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy are repeatedly melted at 300℃ 3~5 times to ensure uniform mixing.

[0021] Further, in a preferred embodiment of the present invention, the preparation steps of the Co-modified SiC nanowires are as follows: SiC, ethylene glycol, and CO(NO3)2·6H2O are magnetically stirred and mixed; the resulting mixture is then chemically reacted with NH2NH2·xH2O+NaOH, followed by washing, centrifugation, and drying to obtain the Co-modified SiC nanowires. Specifically, SiC, ethylene glycol, and CO(NO3)2·6H2O are magnetically stirred and mixed for 6 hours.

[0022] Further, in a preferred embodiment of the present invention, the step of chemically reacting the obtained mixture with (NH2NH2.xH2O+NaOH) is as follows: heating the mixture and NH2NH2.xH2O+NaOH at 100°C under a nitrogen atmosphere for 6 hours, then heating at 180°C under a nitrogen atmosphere for 6 hours, and then washing, centrifuging and drying to obtain the Co-modified SiC nanowires.

[0023] Furthermore, in a preferred embodiment of the present invention, the drying temperature is 65~75°C. Preferably, the drying temperature is 70°C.

[0024] This invention first selects high-purity (>99.9%) Sn, Ag, Cu, In, and Ga metal ingots, and sequentially places them into a heating furnace in order of increasing melting point to prepare two ternary alloys: Ga-21.5In-10Sn and Sn-3.8Ag-0.7Cu. Then, the two alloys are mixed and melted in different proportions to prepare a Sn-Ag-Cu-Ga-In high-entropy solder. Finally, Co-modified SiC nanowires are added to strengthen the high-entropy alloy. Adding Ga-21.5In-10Sn to the Sn-3.8Ag-0.7Cu alloy significantly reduces its melting temperature, which is beneficial for simplifying the soldering process of electronic devices. The Co-modified SiC nanowires enhance the solder joints and improve their fatigue life.

[0025] This invention provides the application of high-entropy solder in the soldering of fan-out packaged devices. The invention employs low-temperature reflow soldering with an external magnetic field to achieve metallurgical interconnection of fan-out packaged devices, obtaining highly reliable interconnect solder joints. Co-modified SiC nanowires enhance the solder joints, improving their fatigue life and ensuring high-performance interconnection of fan-out packaged devices under low-temperature conditions.

[0026] Furthermore, in a preferred embodiment of the present invention, the welding step is as follows: after slicing the high-entropy solder of the fan-out packaged device, welding is performed using an external magnetic field low-temperature reflow welding process to obtain high-reliability interconnect solder joints. The welding temperature is 170~240℃ and the welding time is 1~5min.

[0027] The Sn-Ag-Cu-Ga-In high-entropy low-temperature solder prepared in this invention has a melting temperature controlled at around 210℃, enabling interconnection of fan-out packaged devices. Based on the hysteresis diffusion effect and lattice distortion control of the high-entropy solder, the rapid growth of intermetallic compounds in the interface layer ensures that the solder joint maintains high performance during long-term service. The addition of Co-modified SiC nanowires to the high-entropy solder ensures that, during reflow soldering under an applied magnetic field, the Co-modified SiC nanowires align according to the direction of the magnetic induction lines, maintaining a regular distribution within the solder joint, strengthening the solder joint, and improving its fatigue life.

[0028] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0029] Example 1 This embodiment provides a high-entropy solder for a fan-out type packaging device, comprising, by mass percentage, 0.2 wt.% Ga-21.5In-10Sn, 99.7 wt.% Sn-3.8Ag-0.7Cu, and 0.1 wt.% Co-modified SiC nanowires, which is prepared according to the following steps: (1) Sn metal ingots, In metal ingots, and Ga metal ingots were placed into a heating furnace in order of increasing melting point of each element, and melted at 500℃ for 30 min to obtain Ga-21.5In-10Sn ternary alloy. Sn metal ingots, Ag metal ingots, and Cu metal ingots were placed into a heating furnace in order of increasing melting point of each element, and melted at 500℃ for 30 min to obtain Sn-3.8Ag-0.7Cu ternary alloy.

[0030] (2) 0.5 g of commercially available SiC was mixed thoroughly with 500 mL of ethylene glycol (C2H6O2) and 10 g of CO(NO3)2·6H2O using magnetic stirring for 6 h. The mixture was then chemically reacted with (NH2NH2·xH2O+NaOH), with the first stage heated at 100 °C in a nitrogen atmosphere for 6 h and the second stage heated at 180 °C in a nitrogen atmosphere for 6 h. The resulting precipitate was washed, centrifuged, and repeatedly dried at 70 °C to obtain Co-modified SiC nanowires.

[0031] (3) According to the mass percentage of the high-entropy solder for the fan-out type packaging device in the corresponding embodiment, the Ga-21.5In-10Sn ternary alloy and Sn-3.8Ag-0.7Cu ternary alloy are repeatedly melted at 300℃ 5 times to make them uniformly mixed. After adding Co-modified SiC nanowires to the Sn-Ag-Cu-Ga-In high-entropy solder, the high-entropy solder for the fan-out type packaging device is obtained.

[0032] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 204.1°C, the liquidus temperature is 215.5°C, and after reflow soldering at 230°C for 5 minutes, the tensile strength of the solder joint is 65.1 MPa, and the wetted spread area is 85.4 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0033] Example 2 This embodiment provides a high-entropy solder for a fan-out packaged device, which differs from Embodiment 1 in that, by mass percentage, it includes 0.2 wt.% Ga-21.5In-10Sn, 99.6 wt.% Sn-3.8Ag-0.7Cu, and 0.2 wt.% Co-modified SiC nanowires.

[0034] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 204.8°C, the liquidus temperature is 216.4°C, and after reflow soldering at 240°C for 5 minutes, the solder joint tensile strength is 69.5 MPa, and the wetted spread area is 87.1 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0035] Example 3 This embodiment provides a high-entropy solder for a fan-out packaged device, which differs from Embodiment 1 in that, by mass percentage, it includes 0.4 wt.% Ga-21.5In-10Sn, 99.3 wt.% Sn-3.8Ag-0.7Cu, and 0.3 wt.% Co-modified SiC nanowires.

[0036] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 203.5°C, the liquidus temperature is 214.7°C, and after reflow soldering at 230°C for 5 minutes, the solder joint tensile strength is 70.0 MPa, and the wetting spread area is 87.3 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0037] Example 4 This embodiment provides a high-entropy solder for a fan-out type packaging device, which differs from Embodiment 1 in that: by mass percentage, it includes 0.4 wt.% Ga-21.5In-10Sn, 99.2 wt.% Sn-3.8Ag-0.7Cu, and 0.4 wt.% Co-modified SiC nanowires.

[0038] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 203.7°C, the liquidus temperature is 215.1°C, and after reflow soldering at 230°C for 5 minutes, the solder joint tensile strength is 70.4 MPa, and the wetting spread area is 88.4 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0039] Example 5 This embodiment provides a high-entropy solder for a fan-out packaged device, which differs from Embodiment 1 in that, by mass percentage, it includes 0.6 wt.% Ga-21.5In-10Sn, 98.9 wt.% Sn-3.8Ag-0.7Cu, and 0.5 wt.% Co-modified SiC nanowires.

[0040] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 203.1°C, the liquidus temperature is 213.9°C, and after reflow soldering at 230°C for 5 minutes, the tensile strength of the solder joint is 70.5 MPa, and the wetted spread area is 86.4 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0041] Example 6 This embodiment provides a high-entropy solder for a fan-out packaged device, which differs from Embodiment 1 in that, by mass percentage, it includes 0.6 wt.% Ga-21.5In-10Sn, 98.8 wt.% Sn-3.8Ag-0.7Cu, and 0.6 wt.% Co-modified SiC nanowires.

[0042] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 203.3°C, the liquidus temperature is 214.0°C, and after reflow soldering at 240°C for 5 minutes, the solder joint tensile strength is 72.2 MPa, and the wetting spread area is 87.3 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0043] Example 7 This embodiment provides a high-entropy solder for a fan-out packaged device, which differs from Embodiment 1 in that, by mass percentage, it includes 0.8 wt.% Ga-21.5In-10Sn, 98.5 wt.% Sn-3.8Ag-0.7Cu, and 0.7 wt.% Co-modified SiC nanowires.

[0044] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 202.7°C, the liquidus temperature is 213.0°C, and after reflow soldering at 230°C for 5 minutes, the solder joint tensile strength is 69.5 MPa, and the wetting spread area is 85.9 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0045] Example 8 This embodiment provides a high-entropy solder for a fan-out type packaging device, which differs from Embodiment 1 in that: by mass percentage, it includes 0.8 wt.% Ga-21.5In-10Sn, 98.4 wt.% Sn-3.8Ag-0.7Cu, and 0.8 wt.% Co-modified SiC nanowires.

[0046] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 202.7℃, the liquidus temperature is 213.1℃, and after reflow soldering at 240℃ for 5 minutes, the tensile strength of the solder joint is 71.1 MPa, and the wetted spread area is 86.7 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0047] Example 9 This embodiment provides a high-entropy solder for a fan-out packaged device, which differs from Embodiment 1 in that, by mass percentage, it includes 1.0 wt.% Ga-21.5In-10Sn, 98.1 wt.% Sn-3.8Ag-0.7Cu, and 0.9 wt.% Co-modified SiC nanowires.

[0048] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 201.5°C, the liquidus temperature is 212.5°C, and after reflow soldering at 230°C for 5 minutes, the tensile strength of the solder joint is 68.5 MPa, and the wetted spread area is 85.0 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0049] Example 10 This embodiment provides a high-entropy solder for a fan-out type packaging device. The difference between this embodiment and Embodiment 1 is that, by mass percentage, it includes 1.0 wt.% Ga-21.5In-10Sn, 98.0 wt.% Sn-3.8Ag-0.7Cu, and 1.0 wt.% Co-modified SiC nanowires.

[0050] In this embodiment, the solidus temperature of the high-entropy solder for the fan-out packaged device is 201.7°C, the liquidus temperature is 212.6°C, and after reflow soldering at 240°C for 5 minutes, the tensile strength of the solder joint is 69.6 MPa, and the wetted spread area is 85.4 mm². 2 It meets the interconnection requirements of fan-out packaged devices.

[0051] Comparative Example 1 This comparative example provides a Sn-3.8Ag-0.7Cu ternary alloy, which is prepared according to the following steps: Sn metal ingots, Ag metal ingots, and Cu metal ingots were placed into a heating furnace in order of increasing melting point of each element, and melted at 500℃ for 30 minutes to obtain a Sn-3.8Ag-0.7Cu ternary alloy.

[0052] Experimental Example 1 This experimental example studies the fatigue life of the solder joints of the high-entropy solder of the fan-out packaged device in Example 1 and the Sn-3.8Ag-0.7Cu ternary alloy in Comparative Example 1. The experiment was conducted according to the US military standard MIL-STD-883.

[0053] like Figure 1 The image shows a comparison of the solder joint fatigue life of the high-entropy solder in Example 1 and the Sn-3.8Ag-0.7Cu ternary alloy in Comparative Example 1. From... Figure 1 It can be seen that the fatigue life of Sn-Ag-Cu-Ga-In-Co modified SiC solder joints is 77% higher than that of Sn-3.8Ag-0.7Cu solder joints.

[0054] The embodiments described above are some, but not all, embodiments of the present invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

Claims

1. A fan-out package device high-entropy solder, characterized by, 0.2-1.0wt.% Ga-21.5In-10Sn ternary alloy, 98.0-99.7wt.% Sn-3.8Ag-0.7Cu ternary alloy and 0.1-1.0wt.% Co modified SiC nanowire by mass percentage.

2. The method of claim 1, wherein the high-entropy solder is prepared by the steps of: providing a first metal; providing a second metal; providing a third metal; providing a fourth metal; and providing a fifth metal. The method comprises the following steps: S1, respectively acquiring the Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy; S2, the Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy are mixed and smelted, and the obtained Sn-Ag-Cu-Ga-In high-entropy solder is added with the Co modified SiC nanowire to obtain a fan-out packaging device high-entropy solder.

3. The production method according to claim 2, characterized by, In step S1, the preparation steps of the Ga-21.5In-10Sn ternary alloy are as follows: Sn metal ingot, In metal ingot and Ga metal ingot are sequentially placed in a heating furnace in the order of low to high melting point of each element for smelting to obtain the Ga-21.5In-10Sn ternary alloy, and the purity of the Sn metal ingot, the In metal ingot and the Ga metal ingot is greater than 99.9%.

4. The production method according to claim 2, characterized by, In step S1, the preparation steps of the Sn-3.8Ag-0.7Cu ternary alloy are as follows: Sn metal ingot, Ag metal ingot and Cu metal ingot are sequentially placed in a heating furnace in the order of low to high melting point of each element for smelting to obtain the Sn-3.8Ag-0.7Cu ternary alloy, and the purity of the Sn metal ingot, the Ag metal ingot and the Cu metal ingot is greater than 99.9%.

5. The production method according to claim 2, characterized by, In step S2, the step of the mixed smelting is as follows: the Ga-21.5In-10Sn ternary alloy and the Sn-3.8Ag-0.7Cu ternary alloy are repeatedly smelted for 3-5 times at 290-310℃.

6. The preparation method according to claim 2, characterized in that, In step S2, the preparation steps of the Co modified SiC nanowire are as follows: SiC, ethylene glycol and CO(NO3)2.6H2O are mixed by magnetic stirring to obtain a mixture, and the mixture is chemically reacted with NH2NH2.xH2O+NaOH, and then washed, centrifuged and dried to obtain the Co modified SiC nanowire.

7. The production method according to claim 6, wherein The step of chemically reacting the obtained mixture with NH2NH2.xH2O+NaOH is as follows: the mixture and the NH2NH2.xH2O+NaOH are heated at 100℃ under nitrogen atmosphere for 6 hours, and then heated at 180℃ under nitrogen atmosphere for 6 hours, and then washed, centrifuged and dried to obtain the Co modified SiC nanowire.

8. The preparation method according to claim 6, characterized in that, The drying temperature is 65-75℃.

9. The fan-out packaging device high-entropy solder of claim 1 is applied in soldering of a fan-out packaging device.

10. Use according to claim 9, characterized in that, The step of the soldering is as follows: the fan-out packaging device high-entropy solder is cut into slices, and then soldered by using an external magnetic field low-temperature reflow soldering process to obtain a high-reliability interconnection solder joint, and the soldering temperature is 170-240℃ and the soldering time is 1-5min.

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