Cooling system, substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device, and program product

Abstract

Provided are a cooling system, a substrate processing apparatus, a substrate processing method, a method of manufacturing a semiconductor device, and a technique relating to a program product, which can improve the cooling efficiency of a substrate. The present invention is provided with: a container having a support capable of supporting a plurality of substrates in multiple layers; and a plurality of cooling nozzles disposed along the inner surface of the container and provided with gas supply holes for supplying a cooling gas corresponding to the plurality of substrates supported by the support. The gas supply hole of one cooling nozzle and the gas supply hole of the other cooling nozzle supply cooling gas corresponding to different substrates.

Description

Technical Field

[0001] This invention relates to cooling systems, substrate processing apparatus, substrate processing methods, semiconductor device manufacturing methods, and process products. Background Technology

[0002] As a step in the manufacturing process of semiconductor devices (components), sometimes a process of supplying inactive gas to multiple substrates is carried out in a loading interlock chamber between an atmospheric transport space and a substrate holding space (for example, see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-99711 Summary of the Invention

[0006] As described above, sometimes the process of suspending and cooling the substrates is performed in a loading interlock chamber that suspends multiple substrates.

[0007] This invention provides a technique that can improve the cooling efficiency of a substrate.

[0008] According to one aspect of the present invention, the following technology is provided, comprising:

[0009] A container having a support member capable of supporting multiple substrates in multiple layers; and

[0010] Multiple cooling nozzles are arranged along the inner surface of the container and have gas supply holes corresponding to the multiple substrates supported on the support member for supplying cooling gas.

[0011] The gas supply holes of one of the aforementioned cooling nozzles and the gas supply holes of other aforementioned cooling nozzles supply cooling gas to different of the aforementioned substrates.

[0012] Invention Effects

[0013] According to the present invention, the cooling efficiency of the substrate can be improved. Attached Figure Description

[0014] Figure 1 This is a schematic structural diagram of a substrate processing apparatus according to one aspect of the present invention.

[0015] Figure 2 This is a schematic longitudinal sectional view of a substrate processing apparatus according to one aspect of the present invention.

[0016] Figure 3 This is a schematic longitudinal sectional view of the loading interlock chamber of a substrate processing apparatus according to one aspect of the present invention.

[0017] Figure 4 This is a schematic cross-sectional view of the loading interlock chamber of a substrate processing apparatus according to one aspect of the present invention.

[0018] Figure 5 This is a diagram showing the structure of the control unit of a substrate processing apparatus according to one embodiment of the present invention.

[0019] Figure 6 This is a flowchart illustrating the cooling process in the loading interlock chamber of a substrate processing apparatus according to one aspect of the present invention.

[0020] Explanation of reference numerals in the attached figures

[0021] 15 containers

[0022] 32. Boat / Dish Support (Component)

[0023] 49A and 49B nozzles (cooling nozzles)

[0024] 50A and 50B gas supply ports

[0025] 100 wafers (substrate) Detailed Implementation

[0026] The following is mainly for reference. Figures 1-6 One aspect of the present invention will be described below. Furthermore, the accompanying drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily correspond to reality. Similarly, the dimensional relationships and ratios of elements may not be consistent across multiple drawings. Additionally, substantially identical elements are labeled with the same reference numerals across multiple drawings, and each element is described in the drawing in which it first appears; in subsequent drawings, its description is omitted unless specifically required. Furthermore, the present invention is not limited to the following approach and can be implemented with appropriate modifications within the scope of the present invention.

[0027] (1) Structure of the substrate processing device

[0028] One embodiment of the substrate processing apparatus 10 of the present invention is as follows: Figure 1 and Figure 2 As shown, the system includes an atmospheric transport chamber (EFEM: Equipment Front End Module) 12, loading ports 29-1 to 29-3 connected to the atmospheric transport chamber 12 and housing wafer cassettes 27-1 to 27-3 as substrate storage containers, loading interlock chambers 14A and 14B which are pressure-controlled and serve as preparation chambers, a transport chamber 16 which serves as a vacuum transport chamber, and processing chambers 18A and 18B for processing the wafer 100, which serves as a substrate. Furthermore, processing chambers 18A and 18B are separated by a partition wall 20.

[0029] In this configuration, each structure of the loading interlock chambers 14A and 14B (including structures attached to the loading interlock chambers 14A and 14B) is constructed in the same manner. Therefore, there is a possibility that the loading interlock chambers 14A and 14B may be collectively referred to as "loading interlock chamber 14".

[0030] Furthermore, in this embodiment, each structure of processing chambers 18A and 18B (including structures attached to processing chambers 18A and 18B) is constructed in the same manner. Therefore, there is a possibility that processing chambers 18A and 18B may be collectively referred to as "processing chamber 18".

[0031] Between the loading interlock chamber 14 and the transport chamber 16, such as Figure 2 As shown, a connecting portion 22 is formed to connect adjacent chambers. This connecting portion 22 is configured to be opened and closed by a gate valve 24.

[0032] Between the transport room 16 and the processing room 18, such as Figure 2 As shown, a connecting portion 26 is formed to connect adjacent chambers. This connecting portion 26 is configured to be opened and closed by a gate valve 28.

[0033] In the atmospheric transport chamber 12, between the wafer cassettes 27-1 to 27-3, which are respectively placed on loading ports 29-1 to 29-3, and the loading interlock chamber 14, there is an atmospheric robot 30 that serves as an atmospheric-side transport device for transporting wafers 100. This atmospheric robot 30 is configured to transport multiple wafers 100 simultaneously in the atmosphere.

[0034] The system is configured to handle the loading and unloading of wafers 100 relative to the loading interlock chamber 14. The loading interlock chamber 14 is configured to switch between atmospheric pressure and vacuum pressure. Specifically, when loading and unloading wafers 100 between the loading interlock chamber 14 and the atmospheric transport chamber 12, the pressure inside the loading interlock chamber 14 is switched to atmospheric pressure; when loading and unloading wafers 100 between the loading interlock chamber 16 and the transport chamber 16, the pressure inside the loading interlock chamber 14 is switched to vacuum pressure. Furthermore, the system is configured to use an atmospheric robot 30 to load unprocessed wafers 100 into the loading interlock chamber 14 and a vacuum robot 70 to remove the loaded unprocessed wafers 100. Conversely, the system is configured to use a vacuum robot 70 to load processed wafers 100 into the loading interlock chamber 14 and an atmospheric robot 30 to remove the loaded processed wafers 100. Details regarding the contents of the loading interlock chamber 14 will be described later.

[0035] In the transfer chamber 16, a vacuum robot 70 is provided as a vacuum-side transfer device for transferring wafers 100 between the loading interlock chamber 14 and the processing chamber 18. The vacuum robot 70 includes a substrate transfer section 72 that supports and transfers the wafers 100 and a transfer drive section 74 that raises, lowers, and rotates the substrate transfer section 72.

[0036] An arm 76 is provided in the substrate transport section 72. A finger 78 for placing the wafer 100 is provided in this arm 76. Alternatively, multiple fingers may be provided at predetermined intervals along the vertical direction of the arm 76. Multiple layers of the arm 76 may also be stacked. Furthermore, the finger 78 is configured to extend and retract freely in a generally horizontal direction.

[0037] The movement of the wafer 100 from the loading interlock chamber 14 to the processing chamber 18 is carried out by the following: the wafer 100 supported on the boat 32 is moved into the transport chamber 16 by the vacuum robot 70 via the connecting part 22, and then moved into the processing chamber 18 via the connecting part 26.

[0038] In addition, the movement of the wafer 100 from the processing chamber 18 to the loading interlock chamber 14 is carried out by the following: the wafer 100 in the processing chamber 18 is moved into the transport chamber 16 by the vacuum robot 70 via the connecting part 26, and then supported on the boat 32 via the connecting part 22.

[0039] The processing chamber 18 is provided with a first processing unit 80, a second processing unit 82 disposed at a position away from the transfer chamber 16 compared to the first processing unit 80, and a substrate moving unit 84 for transferring the wafer 100 between the second processing unit 82 and the vacuum robot 70.

[0040] The first processing unit 80 includes a mounting stage 96 for placing the wafer 100 and a first heater (not shown) for heating the mounting stage 96.

[0041] The second processing unit 82 includes a mounting stage 92 for placing the wafer 100 and a second heater (not shown) for heating the mounting stage 92.

[0042] The first processing unit 80 and the second processing unit 82 are configured to process the chip 100 in the same way.

[0043] The substrate moving part 84 consists of a moving member 86 that supports the wafer 100 and a moving shaft 88 located near the dividing wall 20. The moving member 86 is configured to rotate and move freely about the moving shaft 88.

[0044] Furthermore, the substrate moving unit 84 rotates the moving member 86 toward the first processing unit 80, thereby transferring the wafer 100 between itself and the vacuum robot 70 on the first processing unit 80 side. In this way, the substrate moving unit 84 moves the wafer 100 transported by the vacuum robot 70 to the mounting stage 92 of the second processing unit 82, and also moves the wafer 100 placed on the mounting stage 92 toward the vacuum robot 70.

[0045] Next, we will mainly use Figures 2-4 Detailed description of loading interlocking room 14.

[0046] The loading interlock chamber 14 is composed of a container 15. The container 15 is composed of a top plate 15A, a bottom plate 15B, and an outer peripheral wall 15C. Inside the container 15 is a boat 32, which serves as a support member capable of supporting multiple wafers 100 in multiple layers along the vertical direction. A drive device 150 is connected to the boat 32 via a rotation shaft 52 that serves as a support shaft for the boat 32. The boat 32 is configured to be able to rise, fall, and rotate within the loading interlock chamber 14. The boat 32 is driven by the drive device 150, such as... Figure 3 As shown, the wafer 100 loaded in the boat 32 is raised to a cooling position between nozzles 49A and 49B for cooling. Nozzles 49A and 49B are respectively used as cooling nozzles to cool the wafer 100 in the loading interlock chamber 14.

[0047] The boat 32 is constructed by connecting the upper plate portion 34 and the lower plate portion 36 using a plurality of support portions 38. In the plurality of support portions 38, a plurality of support portions 40 (e.g., 1 to 25) are formed at predetermined intervals along the vertical direction to support the wafer 100 substantially horizontally. The boat 32 is configured to support at least one (e.g., 1 to 25) wafers 100 in multiple layers at predetermined intervals using the support portions 40, and to support the wafers 100 substantially horizontally.

[0048] Furthermore, the use of numerical ranges such as "1 to 25 pieces" in this specification indicates that the lower and upper limits are included within that range. Thus, for example, "1 to 25 pieces" means "more than 1 piece and less than 25 pieces." The same applies to other numerical ranges.

[0049] The loading interlock chamber 14 is provided with nozzles 49A and 49B for cooling multiple wafers 100 within the loading interlock chamber 14. The nozzles 49A and 49B are respectively arranged in the vertical direction along the inner surface of the container 15 and along the arrangement direction of the wafers 100 in the boat 32.

[0050] Gas supply holes 50A and 50B are formed in nozzles 49A and 49B, respectively, to supply inactive gas as cooling gas to the surface of each of the plurality of wafers 100 at approximately horizontal levels. Multiple gas supply holes 50A and 50B are formed vertically, facing the arrangement direction of the wafers 100. Furthermore, the positions of gas supply holes 50A and 50B differ in each nozzle 49A and 49B. Specifically, the gas supply holes 50A and 50B are formed at different vertical heights relative to the nozzles 49A and 49B, respectively. Specifically, the gas supply holes 50A and 50B are arranged alternately among the wafers 100 mounted on the boat 32. That is, the gas supply hole 50A formed in nozzle 49A is arranged in pairs (one empty, one skipped) relative to the surface of the wafers 100 mounted on the boat 32. Similarly, the gas supply holes 50B formed in the nozzle 49B are arranged in pairs (one empty, one skipped) relative to the surfaces of the wafers 100 mounted on the boat 32 that are different from the gas supply holes 50A. Therefore, it is configured to supply inactive gas from different directions along both the surface and back sides of a wafer 100.

[0051] That is, nozzles 49A and 49B are configured to supply inactive gas to different wafers 100 supported on the boat 32. In other words, gas supply holes 50A and 50B are configured to supply inactive gas to different wafers 100 respectively. In other words, gas supply hole 50A of nozzle 49A and gas supply hole 50B of nozzle 49B are configured to supply inactive gas corresponding to different wafers 100.

[0052] In addition, nozzles 49A and 49B are respectively positioned at a predetermined distance from the inner surface of container 15. That is, a gap is provided between nozzles 49A and 49B and the inner surface of container 15.

[0053] Here, there is a situation where the nozzles 49A and 49B are pushed in the opposite direction to the gas supply holes 50A and 50B due to the gas supply. Therefore, the nozzles 49A and 49B are configured to be positioned at a distance from which they will not come into contact with the inner surface of the container 15 due to the gas supply. This suppresses the generation of particles due to contact between the nozzles 49A and 49B and the inner surface of the container 15, and discharges the generated particles. Furthermore, a buffer material may be provided between the nozzles 49A and 49B and the inner surface of the container 15. This further suppresses contact between the nozzles 49A and 49B and the inner surface of the container 15.

[0054] In this embodiment, except for the formation positions of the gas supply holes 50A and 50B of the nozzles 49A and 49B, each structure is constructed in the same manner. Therefore, there is a possibility that the nozzles 49A and 49B are collectively referred to as "nozzle 49". Furthermore, in this embodiment, there is a possibility that the gas supply holes 50A and 50B are collectively referred to as "gas supply hole 50".

[0055] As described above, the back surface of the upper wafer 100 and the surface of the lower wafer 100 can be efficiently cooled from a single gas supply port 50, and multiple wafers 100 supported by multiple layers can be cooled uniformly and efficiently. That is, the cooling efficiency of the wafers 100 can be improved within the container 15.

[0056] In addition, such as Figure 4 As shown, nozzles 49A and 49B are positioned at different locations relative to the inner circumferential surface of container 15. Specifically, when viewed from above, nozzles 49A and 49B are positioned opposite each other around wafer 100. In other words, nozzles 49A and 49B are arranged along the inner circumferential surface of container 15, facing each other across wafer 100 between the inner circumferential surface of container 15 and the end face of wafer 100.

[0057] Furthermore, the plurality of gas supply holes 50A of nozzle 49A and the plurality of gas supply holes 50B of nozzle 49B are configured to be disposed in non-interfering positions relative to the wafer 100. That is, the plurality of gas supply holes 50A of nozzle 49A and the plurality of gas supply holes 50B of nozzle 49B are configured to be disposed in non-opposing positions, such that they are not disposed in opposing positions respectively.

[0058] In other words, the gas supply port 50B configured as nozzle 49B is not located on the extension line of the gas supply port 50A of nozzle 49A. Furthermore, the extension line of the gas supply port 50A of nozzle 49A is configured to be substantially parallel to the extension line of the gas supply port 50B of nozzle 49B. Additionally, the gas supply ports 50A and 50B of nozzle 49A and nozzle 49B are configured such that, when viewed from above, they are positioned at a predetermined distance from the center of wafer 100, and supply inactive gas to the surface of wafer 100 from substantially parallel directions. In other words, nozzles 49A and 49B are positioned at a distance from the center of wafer 100 in the horizontal direction relative to wafer 100.

[0059] Therefore, collisions of inactive gases on the wafer 100 can be avoided between nozzles 49A and 49B, preventing turbulence in the flow of inactive gases on the surface of the wafer 100. As a result, cooling time can be shortened, the amount of inactive gas supplied to the loading interlock chamber 14 can be reduced, and multiple wafers 100 can be cooled effectively.

[0060] In the top plate portion 15A constituting the loading interlock chamber 14, a gas supply pipe 42 is connected, which communicates with nozzles 49A and 49B via gas supply pipes 41A and 41B respectively. In the gas supply pipe 42, from upstream, an inactive gas supply source 48, a mass flow controller (MFC) 47 serving as a flow controller (flow control unit), and a valve 43 serving as an on / off valve are sequentially provided. The inactive gas supply system (also called a cooling gas supply system or cooling gas supply unit) 300, which supplies inactive gas to the wafer 100, is mainly composed of the gas supply pipe 42, the MFC 47, and the valve 43. Alternatively, the gas supply pipes 41A and 41B, the inactive gas supply source 48, or the nozzles 49A and 49B can be included in the inactive gas supply system 300. The inactive gas supply system 300 is positioned at the top of the container 15. This allows for efficient supply of inactive gas into the container 15. A cooling system consisting of container 15 and inactive gas supply system 300 is used to cool the wafer 100 in loading interlock chamber 14.

[0061] That is, the system is configured such that an inactive gas is supplied to multiple wafers 100 within the container 15 via a non-reactive gas supply system 300 located at the upper center of the container 15, and distributed through gas supply pipes 41A and 41B to nozzles 49A and 49B arranged along the inner circumference of the container 15. This allows for efficient supply of inactive gas into the container 15. Furthermore, by distributing and supplying inactive gas from one gas supply pipe 42 to multiple nozzles 49, the piping structure is simplified, the number of components is reduced, and maintainability is improved.

[0062] In this configuration, gas supply pipes 41A and 41B are constructed identically except for their location. Therefore, there is a possibility that gas supply pipes 41A and 41B may be referred to as "gas supply pipe 41".

[0063] The inactive gas supplied from the gas supply pipe 42 is supplied into the loading interlock chamber 14 through multiple gas supply holes 50A of nozzle 49A and multiple gas supply holes 50B of nozzle 49B.

[0064] As an inert gas, it is possible to use, for example, nitrogen (N2) or rare gases.

[0065] An exhaust pipe 44, communicating with the interior of the loading interlock chamber 14, is connected to the bottom plate 15B of the loading interlock chamber 14. A valve 45 and a vacuum pump 46, serving as an exhaust device, are provided on the downstream side of the exhaust pipe 44. The exhaust system mainly consists of the exhaust pipe 44 and the valve 45. Alternatively, the vacuum pump 46 can be included in the exhaust system. The exhaust system is located at the lower part of the container 15. By locating the exhaust system at the lower part of the container 15, inactive gases and particles within the container 15 can be efficiently discharged.

[0066] An opening 102 is formed on the outer peripheral wall 15C of the loading interlock chamber 14 for moving the wafer 100 into and out of the loading interlock chamber 14. The opening 102 is located on the side of the atmospheric robot 30 on the outer peripheral wall 15C. The atmospheric robot 30 is configured to support the wafer 100 on the boat 32 via the opening 102 and to remove the wafer 100 from the boat 32 via the opening 102.

[0067] Additionally, a gate valve 104 for opening and closing the opening 102 is provided on the outer peripheral wall portion 15C.

[0068] Here, with the connecting parts 22 and 102 closed by gate valves 24 and 104, valve 43 is set to the closed state. If valve 45 is opened and vacuum pump 46 is operated in this state, vacuum exhaust is performed inside the loading interlock chamber 14, thereby reducing the vacuum pressure (or depressurizing) inside the loading interlock chamber 14. Alternatively, with the connecting parts 22 and 102 closed by gate valves 24 and 104, closing valve 45 or reducing its opening and opening valve 43 introduces inactive gas into the loading interlock chamber 14, thereby reducing the atmospheric pressure inside the loading interlock chamber 14.

[0069] Furthermore, a window 142 is formed at the position on the outer peripheral wall 15C of the wafer 100 mounted on the boat 32 in the cooling position, corresponding to the position of the last wafer 100, which is supported on the boat 32, and moved into the loading interlock chamber 14. The window 142 is made of a light-transmitting material. A temperature sensor 110 is provided on the outside of the window 142.

[0070] Temperature sensor 110 is configured to measure the temperature inside container 15 or the temperature of the wafer 100 supported at the bottom of boat 32, i.e., the temperature of the processed wafer 100 that was last placed into container 15. In other words, temperature sensor 110 can measure the temperature inside container 15 or the temperature of the wafer 100 from outside container 15. Furthermore, by measuring the temperature of the wafer 100 that was last placed into container 15, it can be inferred that the temperature of all wafers 100 inside container 15 is below the temperature of the wafers 100 measured by temperature sensor 110.

[0071] Furthermore, in this method, the temperature sensor 110 is positioned at the bottom of the wafer 100 supported on the boat 32. However, the temperature sensor 110 can be positioned at any location that is sufficient to measure the temperature of the wafer 100 that is finally moved into the container 15, and is not limited to the bottom of the boat 32.

[0072] like Figure 2 and Figure 3As shown, an opening 148 is formed in the base plate 15B to connect the inside and outside of the loading interlock chamber 14. A drive device 150 is provided below the loading interlock chamber 14 to raise, lower, and rotate the boat 32 via the opening 148.

[0073] The drive unit 150 includes a rotating shaft 52, a retractable bellows (not shown) arranged to surround the rotating shaft 52, a fixed platform 56 that fixes the lower ends of the rotating shaft 52 and the bellows, a lifting drive unit 58 that raises and lowers the boat 32 via the rotating shaft 52, a connecting member 60 that connects the lifting drive unit 58 to the fixed platform 56, and a rotation drive unit 62 that rotates the boat 32.

[0074] The lifting drive unit 58 is configured to lift multiple wafers 100, that is, to lift the boat 32.

[0075] The rotation drive unit 62 is configured to rotate multiple wafers 100, thereby rotating the boat 32. Specifically, the rotation drive unit 62 is configured to rotate the boat 32 about the rotation axis 52.

[0076] (2) Controller Structure

[0077] Next, the structure of the controller 120, which is the control unit (control mechanism), will be described. The controller 120 controls the above-mentioned parts to enable the substrate processing process described later.

[0078] like Figure 5 As shown, the controller 120 is configured as a computer including a CPU (Central Processing Unit) 121A, RAM (Random Access Memory) 121B, a storage device 121C, an I / O port 121D, a temperature measurement unit 121F, and a threshold judgment unit 121G. The controller 120 is configured to control the processing of the chip 100.

[0079] The RAM 121B, storage device 121C, I / O port 121D, temperature measurement unit 121F, and threshold judgment unit 121G are configured to exchange data with the CPU 121A via the internal bus 121E. An operation unit 122 is connected to the controller 120. This operation unit 122 is configured to connect to the display unit 124 via the internal bus 121E and can confirm the status of the chip 100. The operation unit 122 can be, for example, a display panel. In this case, the operation unit 122 and the display unit 124 are housed in the same housing. Additionally, an external communication unit 125 for communicating with external systems is connected to the controller 120.

[0080] The storage device 121C is configured with, for example, flash memory or an HDD (Hard Disk Drive). Within the storage device 121C, a control program that controls the operation of the substrate processing apparatus and a process recipe that describes the steps and conditions of the substrate processing described later are stored in a readable manner. The process recipe is a combination of methods that cause the controller 120 to execute each step of the substrate processing steps described later and obtain a specified result, and functions as a program. Hereinafter, the process recipe and control program will be collectively referred to as a program. Furthermore, the process recipe will be referred to simply as a recipe. When the term "program" is used in this specification, it may include only the recipe, only the control program, or both. RAM 121B is configured as a storage area (working area) that temporarily holds programs and data read by the CPU 121A.

[0081] I / O port 121D connects to atmospheric robot 30, vacuum robot 70, drive unit 150, gate valves 24, 28, 104, valves 43, 45, vacuum pump 46, substrate moving part 84, temperature sensor 110, MFC 47, heater, etc.

[0082] CPU 121A is configured to read and execute control programs from storage device 121C, and to read recipes from storage device 121C based on input of operation instructions from operation unit 122. CPU 121A is configured to control, in accordance with the read recipe, the conveying of wafer 100 by atmospheric robot 30, vacuum robot 70, drive unit 150 and substrate moving unit 84, the opening and closing of gate valves 24, 28, 104, valves 43, 45, the flow and pressure regulation by MFC 47 and vacuum pump 46, the temperature adjustment by heater, etc.

[0083] The controller 120 is configured to install the aforementioned program stored in an external storage device (e.g., a hard disk, a CD, an MO disk, a USB memory, or a semiconductor memory) 123 onto a computer. The storage device 121C and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, they will be referred to collectively but only as a recording medium. When the term "recording medium" is used in this specification, there may be a case that includes only the storage device 121C, a case that includes only the external storage device 123, or a case that includes both. Furthermore, the program may be provided to the computer without using the external storage device 123, but using communication means such as the Internet or a dedicated line.

[0084] The temperature measurement unit 121F of the controller 120 measures the temperature inside the container 15 or the temperature of the wafer 100 supported at the bottom of the boat 32 via the temperature sensor 110, that is, the temperature of the wafer 100 that was last moved into the container 15.

[0085] Additionally, the controller 120 can control the lifting and rotating motion of the boat 32 using the drive device 150. The controller 120 is configured to control the boat 32 to rise or fall after a wafer 100 is placed into the container 15 and wait for the next wafer 100 to be placed in.

[0086] Furthermore, the controller 120 is configured to begin supplying inactive gas before or at the start of the transfer from the wafer 100 to the container 15. Additionally, the controller 120 is configured to continuously supply inactive gas during the transfer of the wafer 100 into the container 15.

[0087] Furthermore, the threshold determination unit 121G of the controller 120 determines, based on the temperature measured by the temperature measurement unit 121F, whether the temperature inside the container 15 or the temperature of the wafer 100 supported at the bottom of the boat 32, i.e., the temperature of the wafer 100 last placed into the container 15, is below a threshold. Moreover, the controller 120 is configured such that, if the threshold determination unit 121G determines that the temperature inside the container 15 or the temperature of the wafer 100 supported at the bottom of the boat 32, i.e., the temperature of the wafer 100 last placed into the container 15, is below a threshold, it can close the valve 43 and stop the supply of inactive gas to the container 15.

[0088] In other words, the controller 120 is configured to control the flow rate of the inactive gas supplied to the container 15 by controlling the MFC 47, valve 43, etc., based on the temperature measured by the temperature measuring unit 121F. Furthermore, the controller 120 is configured to close valve 43 and stop the supply of inactive gas to the container 15 when the temperature inside the container 15, as measured by the temperature measuring unit 121F, or the temperature of the wafer 100 supported at the bottom of the boat 32 (i.e., the temperature of the wafer 100 last placed into the container 15), is below a preset threshold. In this way, by adjusting the flow rate of the inactive gas, the impact on the wafer 100 can be adjusted. Furthermore, as a result, the cooling time of the wafer 100 can be shortened, the amount of inactive gas supplied to the loading interlock chamber 14 can be reduced, and multiple wafers 100 can be cooled effectively. In other words, by controlling the temperature of the wafer 100 that is finally moved into the container 15 to below a threshold, the temperature of any wafer 100 can be reduced to below a threshold before the wafer 100 is moved from the loading interlock chamber 14 to the wafer cassettes 27-1 to 27-3, thereby suppressing the thermal impact on the atmospheric robot 30 or the wafer cassettes 27-1 to 27-3.

[0089] (3) Substrate processing process

[0090] Next, as a step in the semiconductor manufacturing process, using Figure 1 , Figure 2 and Figure 6 The manufacturing method of a semiconductor device using the substrate processing apparatus 10 with the above-described structure, namely the processing steps of the wafer 100, will be described. Furthermore, in the following description, the operation of each component constituting the substrate processing apparatus 10 is controlled by the controller 120.

[0091] First, the atmospheric robot 30 moves the wafers 100 stored in wafer boxes 27-1 to 27-3 into the atmospheric transport chamber 12. At this time, the gate valve 104 is in the closed state.

[0092] Next, after the loading interlock chamber 14 is pressurized to atmospheric pressure, the gate valve 104 is opened. Specifically, the valve 43 of the gas supply pipe 42 is opened to supply inactive gas into the loading interlock chamber 14. In this way, after the loading interlock chamber 14 is pressurized to atmospheric pressure, the gate valve 104 is opened. At this time, the gate valve 24 is in the closed state.

[0093] Next, the chip 100 is moved into the loading interlock chamber 14. Specifically, the atmospheric robot 30 is used to move the chip 100, which has been moved into the atmospheric transport chamber 12, into the loading interlock chamber 14, where the chip 100 is loaded into the vessel 32.

[0094] Next, after closing the gate valve 104, the loading interlock chamber 14 is vacuum-pressurized. Specifically, after the boat 32 supports a predetermined number of wafers 100, the valve 45 of the exhaust pipe 44 is opened, and the vacuum pump 46 is used to vent air from the loading interlock chamber 14. In this way, the loading interlock chamber 14 is vacuum-pressurized. Furthermore, at this time, the transfer chamber 16 and the processing chamber 18 are also vacuum-pressurized.

[0095] Next, the wafer 100 is transferred from the loading interlock chamber 14 to the processing chamber 18. Specifically, first, the gate valve 24 is opened. At this time, the lifting drive unit 58 raises and lowers the boat 32, allowing the vacuum robot 70 to remove the wafer 100 supported on the boat 32. The rotation drive unit 62 rotates the boat 32 so that the substrate removal outlet of the boat 32 faces the transfer chamber 16.

[0096] The vacuum robot 70 extends the fingers 78 of its arm 76 toward the boat 32, where the wafer 100 is placed. After retracting the fingers 78, the arm 76 rotates toward the processing chamber 18. Then, the fingers 78 extend to move the wafer 100 into the processing chamber 18 via the connecting portion 26 with the gate valve 28 open.

[0097] In the processing chamber 18, the wafer 100 placed on the finger 78 is either placed on the mounting stage 96 of the processing unit 80 or delivered to the moving member 86 which is waiting on the processing unit 80 side. After receiving the wafer 100, the moving member 86 rotates toward the processing unit 82 side and places the wafer 100 onto the mounting stage 92.

[0098] Then, in the processing chamber 18, the wafer 100 undergoes a prescribed process, such as ashing. In these prescribed processes, heating is performed using a heater or by utilizing the heat of reaction generated during the process, thereby raising the temperature of the wafer 100.

[0099] Next, the processed wafer 100 is transferred (also called loading) from the processing chamber 18 to the loading interlock chamber 14. The transfer of the wafer 100 from the processing chamber 18 to the loading interlock chamber 14 is performed in the reverse order of the operation of loading the wafer 100 into the processing chamber 18.

[0100] First, in step S101, the controller 120, within the loading interlock chamber 14, positions the boat 32 in the initial loading position of the wafer 100. The initial loading position of the wafer 100 is, for example, the position where the wafer 100 is to be loaded (also referred to as transferred) onto the uppermost support portion 40 of the boat 32.

[0101] Next, in step S102, the controller 120 begins supplying an inactive gas as a cooling gas. That is, the controller 120 begins supplying the inactive gas before or at the start of loading the first wafer 100 into the loading interlock chamber 14. Furthermore, the controller 120 continues to supply the inactive gas during the loading process of the wafer 100. During this time, the loading interlock chamber 14 maintains a vacuum pressure state. In this way, by supplying an inactive gas as a cooling gas from before or at the start of loading the processed wafer 100, the temperature rise within the container 15 can be suppressed, and the cooling efficiency of the wafer 100 can be improved.

[0102] Next, in step S103, the controller 120 moves the processed wafer 100 from the processing chamber 18 into the vessel 32 in the loading interlock chamber 14.

[0103] Next, in step S104, the controller 120 raises or lowers the boat 32. That is, after the controller 120 moves the wafer 100 into the loading interlock chamber 14, it raises or lowers the boat 32 to await the loading of the next wafer 100. This improves the loading efficiency of the wafer 100.

[0104] Next, in step S105, the controller 120 determines whether the wafer 100 loaded into the carrier 32 is the last wafer. If the controller 120 determines that the wafer 100 loaded into the carrier 32 is the last wafer, it proceeds to the next step S106; if it determines that it is not the last wafer, it returns to step S103.

[0105] Next, in step S106, if the wafer 100 being moved into the carrier 32 is the last wafer and the moving of the processed wafer 100 into the carrier 32 is complete, the controller 120 closes the gate valve 24, causing the carrier 32 to rise to the cooling position and depressurize the atmosphere within the loading interlock chamber 14. Furthermore, in this method, for example, when the carrier 32 is raised to its highest position within the loading interlock chamber 14, inactive gas is supplied for cooling, thereby promoting cooling by the cooling system. That is, the carrier 32 and the processed wafer 100 supported by the carrier 32 are cooled by the inactive gas supplied to the loading interlock chamber 14. At this time, the temperature measurement unit 121F of the controller 120 measures the temperature of the wafer 100 that was last moved into the carrier 32 by the temperature sensor 110.

[0106] Next, in step S107, the threshold determination unit 121G of the controller 120 determines, based on the temperature measured by the temperature measurement unit 121F, whether the temperature inside the container 15 or the temperature of the wafer 100 supported at the bottom of the boat 32, i.e., the temperature of the wafer 100 last placed into the container 15, is below a threshold. If the controller 120 determines that the temperature inside the container 15 or the temperature of the wafer 100 supported at the bottom of the boat 32, i.e., the temperature of the wafer 100 last placed into the container 15, is below the threshold, it proceeds to the next step S108; if it determines that the temperature is above the threshold, it returns to step S106.

[0107] Next, in step S108, if the threshold determination unit 121G determines that the temperature inside the container 15 or the temperature of the wafer 100 supported at the bottom of the boat 32, that is, the temperature of the wafer 100 that was last moved into the container 15, is below the threshold, the controller 120 closes the valve 43 and stops the supply of inactive gas to the container 15.

[0108] Next, the cooled wafer 100 is moved from the loading interlock chamber 14 to the atmospheric side. Specifically, the wafer 100 is moved from the loading interlock chamber 14, which is opened by the gate valve 104, to the atmospheric transport chamber 12 using the atmospheric robot 30. This completes the wafer 100 transport operation. Furthermore, by moving the cooled wafer 100 to the atmospheric transport chamber 12, the manufacturing of the wafer 100, as a semiconductor device, is completed.

[0109] [Other methods]

[0110] The above describes one aspect of the present invention, but the present invention is not limited to the above aspect and various modifications can be made without departing from its spirit.

[0111] In the above description, the processed wafer 100 was cooled using a container in the loading interlock chamber 14, but the present invention is not limited thereto. For example, it is also well applicable to the case where the processed wafer 100 is cooled using a container in the processing chamber 18. The same effect as the above method is obtained in this method.

[0112] Furthermore, the above description describes a case where a cooling system is separately provided relative to the boat 32 holding the wafer 100, but the present invention is not limited to this structure. For example, the boat 32 can also be used as a cooling system. In this case, supply paths for supplying inactive gases are provided on the plurality of support portions 38 of the boat 32, and gas supply holes 50 communicating with the supply paths and supplying inactive gases to different wafers 100 are provided on the support portion 40 supporting the wafer 100. That is, in this embodiment, the gas supply holes 50 are also located at different positions on each support portion 38. In this embodiment, the same effect as in the above embodiment is obtained. In addition, in this embodiment, the wafer 100 held on the boat 32 can be cooled regardless of the stopping position of the boat 32.

[0113] Furthermore, the above description uses two nozzles 49 arranged along the inner circumferential surface of the container 15, but the present invention is not limited to this structure. Three or more nozzles 49 may also be arranged along the inner circumferential surface of the container 15. In this case, the nozzles 49 are arranged in positions where they do not interfere with each other. For example, when three nozzles 49 are arranged inside the container 15, the gas supply holes 50 formed in each nozzle 49 are formed in multiple ways, with each three wafers 100 loaded on the boat 32 spaced apart (two empty, two skipped). That is, the gas supply holes 50 of the nozzles 49 are spaced at different intervals corresponding to the number of nozzles 49. The same effect as described above is obtained in this method. Furthermore, in this method, by supplying inactive gas from multiple directions, the wafer 100 can be cooled efficiently. Additionally, by arranging the multiple nozzles 49 in positions where they do not interfere with each other, collisions of inactive gas on the wafer 100 can be avoided.

[0114] Furthermore, the above description illustrates a case where multiple gas supply holes 50 are provided on each of the two nozzles 49 along the vertical direction, but the present invention is not limited to this structure. It is also well applicable to cases where multiple nozzles 49 each have one gas supply hole 50. In this embodiment, the same effects as described above are obtained.

[0115] That is, the structure of the number and configuration of nozzles described above is an example, and can be changed according to the situation without departing from the main idea.

[0116] In addition, the processing flow described above is just one example. Unnecessary steps can be deleted, new steps can be added, or the processing order can be changed without deviating from the main point.

[0117] Furthermore, it is preferable that the formulations used in each process are prepared individually according to the processing requirements, and are stored in the storage device 121C in advance via an electrical communication line or an external storage device 123. Moreover, it is preferable that, at the start of each process, the CPU 121A selects an appropriate formulation from the multiple formulations stored in the storage device 121C, based on the processing requirements. This allows for the reproducible formation of films of various types, composition ratios, film qualities, and film thicknesses within a single substrate processing apparatus. Additionally, it reduces operator workload, avoids operational errors, and enables rapid initiation of each process.

[0118] Furthermore, the above-mentioned formula is not limited to the case of creating a new one. For example, it can also be prepared by modifying an existing formula that is already installed in the substrate processing apparatus. In the case of changing the formula, the modified formula can also be installed in the substrate processing apparatus via an electrical communication line or a recording medium containing the formula. Alternatively, the existing formula already installed in the substrate processing apparatus can be directly modified by operating the operation unit 122 of an existing substrate processing apparatus.

[0119] Furthermore, in the above-described method, a leaf-type substrate processing apparatus that processes one or more wafers 100 at a time has been used. The present invention is not limited to the above-described method, and can also be well applied in the case of a batch substrate processing apparatus that processes multiple wafers 100 at a time, for example. Additionally, in the above-described method, a substrate processing apparatus having a cold-wall type processing furnace has been used. The present invention is not limited to the above-described method, and can also be well applied in the case of a substrate processing apparatus having a hot-wall type processing furnace.

[0120] When using these substrate processing devices, each process can be performed with the same processing steps and processing conditions as described above, and the same effect as described above can be obtained.

[0121] Furthermore, the above methods can be used in appropriate combinations. For example, the processing steps and conditions can be set to be the same as those in the methods described above.

Claims

1. A cooling system, characterized by, Possessing: a container having a support capable of supporting a plurality of substrates in multiple layers; and a plurality of cooling nozzles arranged along an inner surface of the container, having gas supply holes that supply cooling gas corresponding to a plurality of the substrates supported by the support, the gas supply holes of one of the cooling nozzles and the gas supply holes of the other cooling nozzles supply cooling gas corresponding to different substrates.

2. The cooling system according to claim 1, wherein at least one of the plurality of cooling nozzles is arranged at a position away from the inner surface of the container.

3. The cooling system according to claim 1, wherein the plurality of cooling nozzles are arranged at opposite positions in the inner peripheral surface of the container.

4. The cooling system according to claim 1, wherein the gas supply holes are provided in a plurality for each of the cooling nozzles.

5. The cooling system according to claim 4, wherein the gas supply holes are arranged at different positions for each of the cooling nozzles.

6. The cooling system according to claim 4, wherein the gas supply holes are arranged at different intervals corresponding to the number of the cooling nozzles.

7. The cooling system according to claim 1, wherein a cooling gas supply portion that supplies the cooling gas is arranged at an upper portion of the container.

8. The cooling system according to claim 7, wherein the cooling gas is supplied from the cooling gas supply portion and distributed to the plurality of cooling nozzles.

9. The cooling system according to claim 1, wherein a temperature sensor that measures the temperature in the container is provided.

10. The cooling system according to claim 9, wherein the temperature sensor is configured to measure the temperature of the substrate that has been processed and is carried into the container.

11. The cooling system according to claim 9, wherein a control portion that controls the processing of the substrate is provided, the control portion is configured to control the flow rate of the cooling gas based on the temperature measured by the temperature sensor.

12. The cooling system according to claim 11, wherein the control portion is configured to control the supply of the cooling gas to be stopped when the temperature of the substrate measured by the temperature sensor becomes a temperature lower than a predetermined threshold value.

13. The cooling system according to claim 1, wherein the gas supply holes of one of the plurality of cooling nozzles and the gas supply holes of the other cooling nozzles are not arranged at opposite positions.

14. The cooling system according to claim 1, wherein the plurality of cooling nozzles are arranged at positions away from the center of the substrate in the horizontal direction with respect to the substrate.

15. The cooling system according to claim 1, wherein a control portion that controls the processing of the substrate is provided, The control section is configured to be able to control to start supply of the cooling gas from when the carrying-in of the substrate into the vessel is started.

16. The cooling system according to claim 1, wherein a control section that is able to control processing of the substrate, the control section is configured to be able to control raising and lowering of the support member, and to be able to control to raise or lower the support member after the substrate is carried into the vessel, and wait for carrying-in of the next substrate.

17. The cooling system according to claim 16, wherein the control section is configured to be able to control to continuously supply the cooling gas during the carrying-in of the substrate.

18. A substrate processing apparatus, characterized by comprising: comprises: the cooling system according to claim 1; and a control section configured to be able to control in a manner to cool the substrate that is heated by processing of the substrate.

19. A substrate processing method, comprising: comprises: a process of processing a substrate; a process of carrying the substrate into a vessel having a support member that is able to support a plurality of the substrates in multiple layers; and a process of cooling the substrate by supplying a cooling gas through a plurality of cooling nozzles that are arranged along an inner surface of the vessel, the plurality of cooling nozzles having gas supply holes that supply the cooling gas corresponding to a plurality of the substrates supported by the support member, in the process of cooling the substrate, the gas supply hole of one of the cooling nozzles and the gas supply hole of another of the cooling nozzles supply the cooling gas corresponding to different ones of the substrates.

20. A method of manufacturing a semiconductor device, characterized by comprises: a process of processing a substrate; a process of carrying the substrate into a vessel having a support member that is able to support a plurality of the substrates in multiple layers; and a process of cooling the substrate by supplying a cooling gas through a plurality of cooling nozzles that are arranged along an inner surface of the vessel, the plurality of cooling nozzles having gas supply holes that supply the cooling gas corresponding to a plurality of the substrates supported by the support member, in the process of cooling the substrate, the gas supply hole of one of the cooling nozzles and the gas supply hole of another of the cooling nozzles supply the cooling gas corresponding to different ones of the substrates.

21. A program product including a program, wherein the program causes a substrate processing apparatus to execute the following steps using a computer: a process of processing a substrate; a process of carrying the substrate into a vessel having a support member that is able to support a plurality of the substrates in multiple layers; and a process of cooling the substrate by supplying a cooling gas through a plurality of cooling nozzles that are arranged along an inner surface of the vessel, the plurality of cooling nozzles having gas supply holes that supply the cooling gas corresponding to a plurality of the substrates supported by the support member, in the process of cooling the substrate, the gas supply hole of one of the cooling nozzles and the gas supply hole of another of the cooling nozzles supply the cooling gas corresponding to different ones of the substrates.

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