Method and apparatus for exhaust gas bias

Abstract

Various embodiments of the present technology may provide a flow control ring disposed between an exhaust plate and a reaction chamber, the flow control ring comprising a plurality of sections, where the plurality of sections consist of a first quarter section, a second quarter section, a third quarter section, and a fourth quarter section, and wherein the second section, the third section and the fourth section have a first height and the first section has a second height greater than the first height.

Description

Technical Field

[0001] This disclosure generally relates to methods and apparatus for exhaust gas biasing. More specifically, this disclosure relates to a flow control loop having a variable height to bias an exhaust gas flow. Background Technology

[0002] In semiconductor manufacturing, reaction chambers utilize flow control loops combined with exhaust systems to remove gases from the reaction space. When the exhaust flow is uneven, the thickness uniformity of the film on the wafer can be negatively affected. Summary of the Invention

[0003] Various embodiments of this technology can provide a flow control loop disposed between an exhaust plate and a reaction chamber. The flow control loop includes multiple segments, wherein the multiple segments are composed of a first quarter segment, a second quarter segment, a third quarter segment, and a fourth quarter segment, and wherein the second, third, and fourth segments have a first height, and the first segment has a second height greater than the first height.

[0004] According to one aspect, an apparatus includes: a reaction chamber including sidewalls; a gas distribution system disposed above the reaction chamber and including: a spray head plate including an inlet gas collection chamber fluidly connected to a plurality of inlet through-holes; and an exhaust plate including an exhaust gas collection chamber; a gate valve disposed within the sidewall of the reaction chamber; an exhaust port disposed within the sidewall of the reaction chamber; and a flow control ring disposed between the exhaust plate and the reaction chamber, and including a plurality of sections, wherein at least one section has a height greater than the height of the different sections.

[0005] In one embodiment, the plurality of segments consist of a first quarter segment, a second quarter segment, a third quarter segment, and a fourth quarter segment.

[0006] In one embodiment, the second segment, the third segment, and the fourth segment have a first height, and the first segment has a second height greater than the first height.

[0007] In one embodiment, the first section is radially aligned with the gate valve.

[0008] In one embodiment, the first section is radially aligned with the gate valve and the exhaust port.

[0009] In one embodiment, the first height has a range from 8 mm to 13 mm, and the second height has a range from 8 mm to 13 mm.

[0010] In one embodiment, the flow control ring includes a top surface comprising a first region having an upwardly tapering profile in a first direction and a second region having a downwardly tapering profile in the opposite second direction.

[0011] In one embodiment, the top surface further includes a third region having a horizontal profile disposed between the first and second regions, the horizontal profile having a width of 10 mm to 20 mm.

[0012] In one embodiment, the flow control ring and the exhaust plate are separated by a gap ranging from 0.1 mm to 2 mm.

[0013] In one embodiment, the flow control ring includes a top surface with a tapered profile.

[0014] In another aspect, an apparatus includes: a reaction chamber; a gas distribution system disposed above the reaction chamber and including: a spray head plate including an inlet gas collection chamber fluidly connected to a plurality of inlet through-holes; and an exhaust plate including an exhaust gas collection chamber; and a flow control ring disposed between the exhaust plate and the reaction chamber, and including a plurality of sections, wherein the plurality of sections are composed of a first quarter section, a second quarter section, a third quarter section and a fourth quarter section, and wherein the second, third and fourth sections have a first height, and the first section has a second height greater than the first height.

[0015] In one embodiment, the flow control ring and the exhaust plate are separated by a gap ranging from 0.1 mm to 2 mm.

[0016] In one embodiment, the flow control ring includes a top surface with a tapered profile.

[0017] In one embodiment, the flow control ring includes a top surface comprising a first region having a tapered profile in a first direction and a second region having a tapered profile in the opposite second direction.

[0018] In one embodiment, the top surface further includes a third region having a horizontal profile disposed between the first and second regions, the horizontal profile having a width of 10 mm to 20 mm.

[0019] In one embodiment, the tapered profile is linear.

[0020] In one embodiment, the first height has a range from 8 mm to 13 mm, and the second height has a range from 8 mm to 13 mm.

[0021] In another aspect, an apparatus includes: a reaction chamber including sidewalls; an exhaust plate disposed above the reaction chamber and including an exhaust gas collection chamber; a gate valve disposed within the sidewall of the reaction chamber; an exhaust port disposed within the sidewall of the reaction chamber; and a flow control ring disposed between the exhaust plate and the reaction chamber, and including a plurality of sections, wherein at least one section includes a top surface having a linear tapered profile and a height greater than the height of the different sections.

[0022] In one embodiment, the top surface further includes a region having a horizontal profile disposed between the first and second regions, the horizontal profile having a width of 10 mm to 20 mm.

[0023] In one embodiment, at least one section is radially aligned with at least one of the gate valve and the exhaust port. Attached Figure Description

[0024] A more complete understanding of the art can be obtained by referring to the detailed description when considered in conjunction with the following illustrative drawings. In the following drawings, the same reference numerals refer to similar elements and steps throughout all the drawings.

[0025] Figure 1 A system according to an embodiment of the present technology is shown in a representative manner;

[0026] Figure 2A and Figure 2B This is a cross-sectional view of a reactor according to an embodiment of the present technology;

[0027] Figure 3A and Figure 3B This is a top view of a flow control loop according to an embodiment of the present technology;

[0028] Figure 4 This is a side view of a flow control loop according to an embodiment of the present technology;

[0029] Figure 5 A side view of a flow control loop according to an embodiment of the present technology; and

[0030] Figure 6 This is a top view of the exhaust disc according to an embodiment of the present technology. Detailed Implementation

[0031] This technology can be described in terms of functional block components and various processing steps. Such functional blocks can be implemented by any number of components configured to perform specified functions and achieve various results. For example, this technology can employ various gas pipelines, valves, controllers, reaction chambers, containers, and bases.

[0032] refer to Figure 1 The exemplary system 100 may include a reactor 102 configured to perform processing on an object to be processed, such as a substrate 105 (e.g., a wafer). For example, the reactor 102 may be configured to perform heating, deposition, etching, polishing, ion implantation, and / or other processing on the object to be processed. In some embodiments, the reactor 102 may be configured to perform moving, vacuum sealing, and venting functions. In some embodiments, the reactor 102 may perform atomic layer deposition (ALD) or chemical vapor deposition (CVD) processes.

[0033] In various embodiments, system 100 may include an exhaust system 140 to facilitate the discharge of gas from reactor 102. For example, exhaust system 140 may include a foreline (not shown) and a pump (e.g., a vacuum pump) (not shown) to facilitate the discharge of gas from reactor 102.

[0034] In an exemplary embodiment, reactor 102 may include a reaction chamber 115, which includes a reaction space 117 above and / or around substrate 105. For example, reaction chamber 115 may include sidewalls and a bottom connected to the sidewalls.

[0035] In an exemplary embodiment, the reaction chamber 115 may include a gate valve 125 disposed within a vertical sidewall of the reaction chamber 115. The gate valve 125 may be used to allow the substrate 105 to be transferred from the wafer holding space 120 to the reaction chamber 115. For example, a robot (not shown) may be used to physically move the substrate from the wafer holding space 120 through the gate valve 125 and into the reaction chamber 115. The gate valve 125 may be controlled by a controller (not shown). For example, the controller may signal the gate valve 125 to open during substrate transfer and close after the substrate has been placed on the pedestal 145.

[0036] In an exemplary embodiment, the reaction chamber 115 may further include an exhaust port 150. The exhaust port 150 may be disposed within a side wall of the reaction chamber or within the top surface of the reactor 102. The exhaust port 150 may be configured to connect the reactor 102 to an exhaust system 140.

[0037] In various embodiments, system 100 may further include a substrate mounting unit disposed within reaction chamber 115 of reactor 102. The substrate mounting unit may include a base 145 for supporting substrate 105 and a heater (not shown) for heating the substrate 105 supported by base 145. The heater may be embedded within base 145. The substrate mounting unit may also include a platform 170 to support base 145. For loading / unloading of substrate 105, the substrate mounting unit may be configured to be vertically movable (up and down) by connection to a drive unit (not shown). Base 145 may be disposed in or adjacent to reaction space 117. For example, base 145 may be arranged to position substrate 105 within reaction space 117.

[0038] In various embodiments, reactor 102 may also include a gas distribution system 110 for conveying vapor into reaction chamber 115. In an exemplary embodiment, gas distribution system 110 is arranged above base 145.

[0039] In various embodiments, the gas distribution system 110 may be arranged adjacent to the reaction chamber 115. For example, the gas distribution system 110 may be disposed on a side wall of the reaction chamber 115, opposite the bottom of the reaction chamber 115. In some embodiments, the gas distribution system 110 may be fastened to the side wall; however, in other cases, the gas distribution system 110 may simply rest on the side wall of the reaction chamber 115. In various embodiments, the gas distribution system 110, together with the side wall of the reaction chamber 115, forms an enclosed space, including the reaction space 117.

[0040] In various embodiments, system 100 may also include a container 135 configured to contain chemicals (i.e., precursors). Container 135 may be configured to hold solid or liquid chemicals and may be further configured to convert solids or liquids into vapors. Container 135 may be coupled to gas distribution system 110. For example, system 100 may also include various gas conduits (not shown) and / or valves (not shown) to allow vapor to flow from container 135 into gas distribution system 110.

[0041] In various embodiments, system 100 may also include an inert gas source 130 configured to contain an inert gas, such as argon. The inert gas source 130 may be fluidly connected to the gas distribution system 110 via any number of gas lines / conduits and / or valves.

[0042] In an exemplary embodiment, and with reference to Figure 1 -2. The gas distribution system 110 may include a spray head plate 200 to deliver vapor to the reaction space 117. In an exemplary embodiment, the spray head plate 200 may include an inlet gas collection chamber 235 configured to receive vapor from the container 135. For example, the inlet gas collection chamber 235 may be connected to the container 135 via an inlet 230.

[0043] In an exemplary embodiment, the spray head plate 200 may further include a plurality of inlet through-holes 240 extending through a portion of the spray head plate 200. For example, the plurality of through-holes 240 may fluidly connect the inlet gas collection chamber 235 and the reaction space 117. For example, vapor flowing into the inlet gas collection chamber 235 from the container 135 may continue to flow through the plurality of through-holes 240. The plurality of inlet through-holes 240 may also be in fluid communication with the reaction space 117. For example, vapor may flow through the plurality of inlet through-holes 240 and enter the reaction space 117. The plurality of inlet through-holes 240 may comprise approximately 1000-1200 through-holes. The plurality of inlet through-holes 240 may be arranged within a central region (also referred to as the spray head region) of the spray head plate 200.

[0044] In some embodiments, the inlet gas collection chamber 235 and the plurality of through holes 240 may be formed within a single structure. In other embodiments, the inlet gas collection chamber 235 and the plurality of through holes 240 may be formed within two different structures arranged directly adjacent to each other.

[0045] In various embodiments, and referring to Figures 2A to 2B and Figure 6 The gas distribution system 110 may also include an exhaust plate 205, which includes an exhaust gas collection chamber 245. The exhaust gas collection chamber 245 may be fluidly connected to an exhaust port 150. For example, gas can flow from the exhaust gas collection chamber 245 and enter the exhaust system 140 via the gas port 150. In various embodiments, the exhaust gas collection chamber 245 may be concentrically arranged with the inlet gas collection chamber 235. For example, the exhaust gas collection chamber 245 may have an annular shape surrounding and larger than the inlet gas collection chamber 235. The exhaust plate 205 may be in direct contact with the sidewall of the reaction chamber 115. For example, the exhaust plate 205 may rest on or be fastened to the sidewall.

[0046] In various embodiments, the exhaust plate 205 may further include an exhaust disk 260 disposed within the exhaust collection chamber 245 and configured to restrict gas flow into the exhaust collection chamber 245. The exhaust disk 260 may include a plurality of through holes 265 extending horizontally through the top and bottom of the exhaust disk 260. The plurality of through holes 265 may be in fluid communication with the exhaust collection chamber 245. In various embodiments, the exhaust plate 205 and the exhaust disk 260 may be formed of a ceramic material, such as alumina. The exhaust disk 260 may be fixed to the inner sidewall of the exhaust collection chamber 245 such that gas flows only through the through holes 265. The plurality of through holes 265 may include any suitable number of through holes, and the diameter of each through hole may be in the range of 0.2 mm to 5 mm. The plurality of through holes 265 may be equidistant from each other. Alternatively, one or more sets of through holes may be present, having a narrower spacing than one or more sets.

[0047] Referring to Figures 2-5, system 100 may further include a flow control ring 210 configured to guide airflow from reaction chamber 117 to exhaust collection chamber 245. The flow control ring 210 may be disposed between reaction chamber 115 and exhaust plate 205. In an exemplary embodiment, the top surface 250 of flow control ring 210 and exhaust plate 205 (and / or exhaust disk 260) may be separated by gaps, such as a first gap 220 and a second gap 225. In various embodiments, the second gap 225 may be smaller than the first gap 220, and the first gap 220 and the second gap 225 may be in the range of 0.1 mm to 2 mm. For example, the first gap 220 may be 1.5 mm, and the second gap 225 may be 1 mm. In various embodiments, the flow control ring 210 may be circular and have an inner wall 320 and an outer edge 325, the inner wall 320 having an inner diameter in the range of 300-400 mm, and the outer edge 325 having an outer diameter in the range of 350-450 mm. Specifically, the inner diameter may be designed to accommodate the base 145 or otherwise engage with the base 145 to form a seal between the outer edge of the base 145 and the inner wall of the flow control ring.

[0048] In various embodiments, the flow control loop 210 may include multiple segments, such as a first segment 300, a second segment 305, a third segment 310, and a fourth segment 315. In an exemplary embodiment, each segment represents one-quarter (i.e., 1 / 4) of the flow control loop 210, such that four (4) segments constitute the entire flow control loop 210.

[0049] In various embodiments, at least one segment of the flow control loop 210 has a different height than the other segments. For example, the second segment 305, the third segment 310, and the fourth segment 315 have a first height H1, and the first segment 300 has a second height H2 greater than the first height H1. Alternatively, the second segment 305 and the fourth segment 315 may have the first height H1, and the first segment 300 and the third segment 315 may have the second height, or any other desired combination. In an exemplary embodiment, the first height H1 may have a range from 8 mm to 13 mm, and the second height H2 may have a range from 8 mm to 13 mm.

[0050] In various embodiments, the segment with the greatest height may be radially aligned with gate valve 125. Alternatively, the segment with the greatest height may be radially aligned with vent port 150. For example, one or more of gate valve 125 and vent port 150 may be adjacent to the outer edge 325 of flow control ring 210. For example, with the first segment 300 radially aligned with gate valve 125, the first segment 300 may have the greatest height relative to the second segment 305, the third segment 310, and the fourth segment 315.

[0051] In various embodiments, and referring to Figure 4-5 At least a portion of the top surface 250 of the flow control ring 210 may have a tapered (i.e., sloping) profile. In an exemplary embodiment, the segment with the greatest height may have a tapered profile. For example, the second segment 305 and the fourth segment 315 may have a first height, and the first segment 300 may have a second height. The first segment 300 may also have a tapered profile. For example, the first segment 300 may include a first region 400 having a tapered profile sloping upward from the second segment 305. The first segment 300 may also include a second region 405 having a tapered profile sloping downward toward the fourth segment 315. In various embodiments, the tapered profile varies linearly.

[0052] In various embodiments, the top surface 250 of the flow control ring 210 may further include a third region 410 having a horizontal profile disposed between the two tapered profiles. For example, the third region 410 connects the first region 400 to the second region 405. In various embodiments, the horizontal profile may have a width in the range of 10 mm to 20 mm.

[0053] During operation, and referring to Figure 1-6 System 100 can be configured to perform atomic layer deposition (ALD), wherein precursors from container 135 are pulsed into reaction space 117 via gas distribution system 110 and purged using an inert gas (e.g., argon). For example, during the pulse step, vapor flows from container 135 into inlet collection chamber 235, through through-hole 240, and into reaction space 117. During the purging step, chemical vapors from the pulse step are expelled from reaction space 117 by allowing inert gas from inert gas source 130 to flow into inlet collection chamber 235, through through-hole 240, and into reaction space 117. At this time, using exhaust system 140, vapors can flow radially outward from reaction space 117, through gaps 220, 225, and into exhaust collection chamber 245. The varying height of flow control loop 210 provides flow bias, as it provides some low conductivity regions and some high conductivity regions. This flow bias can be used to compensate for other biases caused by exhaust ports, gate valves, etc.

[0054] In the foregoing description, the technology has been described with reference to specific exemplary embodiments. The specific embodiments shown and described are illustrative of the technology and its best mode, and are not intended to limit the scope of the technology in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the method and system may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or steps between the various elements. In actual systems, many alternative or additional functional relationships or physical connections may exist.

[0055] The technology has been described with reference to specific exemplary embodiments. However, various modifications and changes can be made without departing from the scope of the technology. The specification and drawings are to be considered illustrative rather than restrictive, and all such modifications are intended to be included within the scope of the technology. Therefore, the scope of the technology should be determined by the general embodiments described and their legal equivalents, and not merely by the specific examples described above. For example, the steps described in any method or process embodiment may be performed in any order unless otherwise expressly specified, and are not limited to the explicit order presented in the specific examples. Furthermore, the components and / or elements described in any apparatus embodiment may be assembled or otherwise operably configured in various arrangements to produce substantially the same results as the technology, and are therefore not limited to the specific configuration described in the specific examples.

[0056] The benefits, other advantages, and solutions to problems have been described above with reference to specific embodiments. However, any benefit, advantage, solution to a problem, or any element that may lead to or make more significant any particular benefit, advantage, or solution should not be construed as a critical, essential, or necessary feature or component.

[0057] The terms “comprising,” “including,” or any variation thereof are intended to refer to a non-exclusive inclusion, such that a process, method, article, composition, or apparatus that comprises a list of elements may include not only those elements listed but also other elements not expressly listed or inherent to such process, method, article, composition, or apparatus. Except for those not specifically described, other combinations and / or modifications of the above-described structures, arrangements, applications, proportions, elements, materials, or components used in the practice of this art may be altered or otherwise specifically adapted to particular environments, manufacturing specifications, design parameters, or other operational requirements without departing from its general principles.

[0058] The present technology has been described above with reference to exemplary embodiments. However, changes and modifications may be made to the exemplary embodiments without departing from the scope of the present technology. These and other changes or modifications are intended to be included within the scope of the present technology, as set forth in the following claims.

Claims

1. An apparatus comprising: a reaction chamber comprising sidewalls; a gas distribution system disposed above the reaction chamber and comprising: a showerhead plate comprising an inlet plenum fluidly coupled to a plurality of inlet through-holes; and an exhaust plate comprising an exhaust plenum; a gate valve disposed within the sidewalls of the reaction chamber; an exhaust port disposed within the sidewalls of the reaction chamber; and a flow control ring disposed between the exhaust plate and the reaction chamber and comprising a plurality of segments, wherein at least one segment has a height greater than a height of a different segment.

2. The apparatus of claim 1, wherein, the plurality of segments consist of a first quarter segment, a second quarter segment, a third quarter segment, and a fourth quarter segment.

3. The apparatus of claim 2, wherein, the second, third, and fourth segments have a first height, and the first segment has a second height greater than the first height.

4. The apparatus of claim 3, wherein, the first segment is radially aligned with the gate valve.

5. The apparatus of claim 3, wherein, the first segment is radially aligned with the gate valve and the exhaust port.

6. The apparatus of claim 3, wherein, the first height has a range of 8 mm to 13 mm, and the second height has a range of 8 mm to 13 mm.

7. The apparatus of claim 1, wherein, the flow control ring comprises a top surface comprising a first region having an upwardly tapering profile in a first direction and a second region having a downwardly tapering profile in a second, opposite direction.

8. The apparatus of claim 7, wherein, the top surface further comprises a third region having a horizontal profile disposed between the first and second regions, the horizontal profile having a width of 10 mm to 20 mm.

9. The apparatus of claim 1, wherein, the flow control ring and exhaust plate are separated by a gap ranging from 0.1 mm to 2 mm.

10. The apparatus of claim 1, wherein, the flow control ring comprises a top surface having a conical profile.

11. An apparatus comprising: a reaction chamber; a gas distribution system disposed above the reaction chamber and comprising: a showerhead plate comprising an inlet plenum fluidly coupled to a plurality of inlet through-holes; and an exhaust plate comprising an exhaust plenum; and a flow control ring disposed between the exhaust plate and the reaction chamber and comprising a plurality of segments, wherein the plurality of segments consist of a first quarter segment, a second quarter segment, a third quarter segment, and a fourth quarter segment, and wherein the second, third, and fourth segments have a first height, and the first segment has a second height greater than the first height.

12. The apparatus of claim 11, wherein, the flow control ring and exhaust plate are separated by a gap ranging from 0.1 mm to 2 mm.

13. The apparatus of claim 11, wherein, the flow control ring comprises a top surface having a conical profile.

14. The apparatus of claim 11, wherein, the flow control ring comprises a top surface comprising a first region having a conical profile in a first direction and a second region having a conical profile in a second, opposite direction.

15. The apparatus of claim 14, wherein, the top surface further comprises a third region having a horizontal profile disposed between the first and second regions, the horizontal profile having a width of 10 mm to 20 mm.

16. The apparatus of claim 14, wherein, the conical profile is linear.

17. The apparatus of claim 11, wherein, the first height has a range of 8 mm to 13 mm, and the second height has a range of 8 mm to 13 mm.

18. An apparatus comprising: a reaction chamber comprising sidewalls; an exhaust plate disposed above the reaction chamber and comprising an exhaust plenum and an exhaust disk disposed within the exhaust plenum, wherein the exhaust disk comprises a plurality of through-holes in fluid communication with the exhaust plenum; a gate valve disposed within a sidewall of the reaction chamber; an exhaust port disposed within a sidewall of the reaction chamber; and a flow control ring disposed between the exhaust plate and the reaction chamber and comprising a plurality of segments, wherein at least one segment comprises a top surface having a linear tapered profile and a height greater than a height of a different segment.

19. The apparatus of claim 18, wherein, The top surface further comprises a region having a horizontal profile disposed between the first and second regions, the horizontal profile having a width of 10 mm to 20 mm.

20. The apparatus of claim 18, wherein, The at least one segment is radially aligned with at least one of the gate valve and the exhaust port.

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