Single-molecule spintronic device based on pulsed femtosecond laser control and preparation method thereof

Abstract

The application relates to the technical field of optoelectronic devices, in particular to a single-molecule spin electronic device based on pulse femtosecond laser regulation and a preparation method. The electronic device takes a laser-induced single-molecule wheel ring porphyrin heteronuclear metal molecule between graphene electrode pairs as a core molecule, and simultaneously selects a lanthanide metal ion with strong spin-orbit coupling characteristics as a coordination center. Electrical test results show that the conductivity of the single-molecule spin electronic device provided by the application is obviously improved after laser irradiation in the low-voltage region and the high-voltage region compared with before the irradiation. Optical test results show that the single-molecule wheel ring porphyrin heteronuclear metal molecule has a strong response speed to laser irradiation. The preparation method provided by the application anchors the functional molecule through an amide bond, constructs a conductive path, and realizes precise construction of the single-molecule spin electronic device. The method is simple to operate, the conditions are easy to control, and the method is helpful to realize large-scale production.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optoelectronic devices, and particularly to a single-molecule spin electronic device based on pulsed femtosecond laser regulation and a preparation method thereof. BACKGROUND

[0002] As the core physical carrier of quantum information technology, the characteristics of quantum bits are based on the basic principles of quantum superposition and entanglement, which have shown great application potential in the fields of quantum computing, quantum sensing, quantum communication and frontier basic scientific research. However, the practical process of this technology is still subject to several key technical bottlenecks, mainly including efficient initialization of spin state, high-fidelity quantum state manipulation, and non-destructive quantum state reading.

[0003] The association of quantum bits and electronic devices is reflected in the deep coupling of physical mechanisms, the cross-innovation of material technology, and the coordinated evolution of system architecture. The core is to realize the manipulation, reading and expansion of quantum bits through the engineering of electronic devices. Among many quantum bit systems, electronic spin systems based on organic molecules have gradually become an important research direction for building new quantum information platforms due to their structural customizability, nanoscale integration capability, and potential advantages of light-controlled quantum states. Through chemical means such as field engineering, metal center regulation, and molecular skeleton topology design, the spin energy level structure, electromagnetic coupling strength can be systematically optimized, and quantum decoherence mechanisms can be suppressed, thereby synergistically improving the coherence time and manipulation efficiency of quantum bits.

[0004] However, the current system still faces many challenges in practical application, which are specifically manifested as poor structural stability and preparation repeatability of the molecule-electrode interface, short spin decoherence time, limited manipulation sensitivity, and difficulty in stable detection of ultrafast spin dynamics signals. These problems jointly restrict the ability to achieve femtosecond ultrafast detection at the single-molecule scale, and become the main obstacle to the development of the field. SUMMARY

[0005] The present application aims to at least solve one of the technical problems in the related art. To this end, the first object of the present application is to provide a single-molecule spin electronic device based on pulsed femtosecond laser regulation, and the second object of the present application is to provide a preparation method of a single-molecule spin electronic device based on pulsed femtosecond laser regulation.

[0006] In order to achieve the first object, the technical solution adopted by the present application is as follows:

[0007] The single-molecule spin electronic device based on pulsed femtosecond laser regulation comprises a first graphene electrode, a laser-induced single molecule, and a second graphene electrode, and the laser-induced single molecule is connected to the first graphene electrode and the second graphene electrode through an amide bond.

[0008] The first graphene electrode and the second graphene electrode form a graphene electrode pair, and the laser-induced single molecule is a functional molecule capable of changing an electron spin state under irradiation of laser;

[0009] The laser-induced single molecule is selected from a cyclotriveratyltene heterobinuclear metal molecule, and a structural formula is as follows:

[0010] .

[0011] The cyclotriveratyltene heterobinuclear metal complex is used as a core molecule, and a lanthanide metal ion with strong spin-orbital coupling characteristics is selected as a coordination center of the cyclotriveratyltene molecule. The dysprosium ion (Dy 3+ ) has multiple spin states and can be used for initialization of electron spins; the ytterbium ion (Yb 3+ ) has a single spin state and can provide controllable spin electrons. The cyclotriveratyltene belongs to a macrocyclic amine compound and can create a highly ordered and shielded coordination field stable environment for spin electrons. The lanthanide metal ion has strong spin-orbital coupling strength and long excited state lifetime, which provides a sufficient time window for coherent operation of quantum states.

[0012] Preferably, the first graphene electrode and the second graphene electrode are nanogap electrodes; the nanogap graphene electrode can be precisely docked with the laser-induced single molecule and fully adapt to the size requirements of nanodevices, breaking through the micro-nano processing limit of traditional metal electrodes.

[0013] Preferably, the first graphene electrode and the second graphene electrode are single-layer graphene. Single-layer graphene realizes multi-dimensional breakthroughs in electronic transmission, mechanical properties, chemical stability and the like due to its atomic structure characteristics, and is an ideal material for nanoelectronic devices.

[0014] Preferably, the first graphene electrode and the second graphene electrode are array electrodes; the array electrodes can realize high-density integration and precise regulation through ordered arrangement of multiple electrode units.

[0015] In order to realize the second object, the technical scheme adopted by the present application is:

[0016] The preparation method of the single-molecule spin electron device based on pulse femtosecond laser regulation is used to prepare the single-molecule spin electron device based on pulse femtosecond laser regulation, and includes the following steps of introducing a laser-induced single molecule between graphene electrodes:

[0017] S100, preparing an organic solution containing a laser-induced single molecule and a carbodiimide condensing agent;

[0018] S200, the graphene electrode pair is placed in the organic solution, and reacts under light-proof and oxygen-free conditions for 24-72 hours, so that the laser-induced single molecule is connected between the graphene electrode pair, and a single molecule spin electronic device based on pulsed femtosecond laser regulation is obtained.

[0019] Preferably, in step S100, the carbodiimide-based condensing agent is selected from 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride.

[0020] Preferably, the solvent of the organic solution is selected from pyridine.

[0021] Preferably, in step S200, the preparation of the graphene electrode pair comprises the following steps:

[0022] S210, a graphene layer is prepared on a copper foil by a chemical vapor deposition method, and a copper foil covered with a graphene layer is obtained;

[0023] S220, a PMMA glue is spin-coated on the surface of the graphene layer of the copper foil, and a protective film is obtained;

[0024] In the formula, PMMA is polymethyl methacrylate.

[0025] S230, the graphene layer covered with the protective film is separated from the copper foil by a chemical etching method, and a graphene layer covered with a protective layer is obtained;

[0026] S240, the graphene layer covered with the protective layer is transferred to a substrate, and PMMA is dissolved by acetone, and a substrate covered with a graphene layer is obtained;

[0027] S250, a graphene electrode pair is prepared on the substrate covered with the graphene layer.

[0028] Preferably, in step S240, the substrate is selected from a silicon wafer.

[0029] Preferably, step S200 comprises a process of detecting the optical and electrical properties of the obtained single molecule spin electronic device based on pulsed femtosecond laser regulation by using a photoelectric system.

[0030] The one or more technical solutions in the embodiments of the present application have at least one of the following technical effects:

[0031] The single molecule spin electronic device based on pulsed femtosecond laser regulation provided by the present application takes the laser-induced single molecule wheel ring temugin as a core molecule between the graphene electrode pair, and selects a lanthanide metal ion with strong spin-orbit coupling characteristics as the coordination center of the wheel ring temugin. Among them, dysprosium ion (Dy 3+ ) has multiple spin states and can be used for initialization of electron spin; ytterbium ion (Yb 3+) with single spin state, which can provide controllable spin electron. The wheel-shaped tubacin belongs to a macrocyclic amine compound, which can create a highly ordered and shielded coordination field stable environment for spin electron. The lanthanide metal ion has strong spin-orbit coupling strength and long excited state lifetime, which provides sufficient time window for coherent operation of quantum state. The electrical test results show that the conductivity of the single-molecule spin electron device provided by the application is obviously improved after laser irradiation in the low voltage region and the high voltage region than before irradiation. The optical test results show that the single-molecule wheel-shaped tubacin heteronuclear metal molecule has strong response speed to laser irradiation.

[0032] The preparation method of the single-molecule spin electron device based on pulse femtosecond laser regulation provided by the application comprehensively uses chemical vapor deposition method, chemical etching method and other technologies to prepare a pair of graphene electrodes on a graphene layer. The single wheel-shaped tubacin heteronuclear metal molecule is anchored by an amide bond, so as to construct a conductive path and realize precise construction of the single-molecule spin electron device. The preparation method adopted by the application is simple to operate and easy to control, which is helpful to realize large-scale production.

[0033] Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following description and the accompanying drawings or can be learned by practice of the application. BRIEF DESCRIPTION OF DRAWINGS

[0034] Figure 1 is a structure schematic diagram of the single-molecule spin electron device based on pulse femtosecond laser regulation provided by the embodiment of the application.

[0035] Figure 2 is a current-voltage relationship curve diagram of the single-molecule spin electron device based on pulse femtosecond laser regulation provided by the embodiment 2 of the application.

[0036] Figure 3 is a relationship curve diagram of the Rabi oscillation signal (△A) of the single-molecule spin electron device based on pulse femtosecond laser regulation provided by the embodiment 2 of the application and the delay time.

[0037] Reference signs:

[0038] 1, first graphene electrode; 2, laser-induced single molecule; 3, second graphene electrode. DETAILED DESCRIPTION

[0039] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments. Obviously, the described embodiments are only some embodiments of this invention, not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention. The following embodiments are used to illustrate this invention, but cannot be used to limit the scope of this invention.

[0040] like Figure 1 As shown, a single-molecule spintronic device based on pulsed femtosecond laser control includes a first graphene electrode 1, a laser-sensing single molecule 2, and a second graphene electrode 3. The laser-sensing single molecule 2 is connected to the first graphene electrode 1 and the second graphene electrode 3 through amide bonds.

[0041] Among them, the first graphene electrode 1 and the second graphene electrode 3 form a graphene electrode pair, and the laser-sensing single molecule, as a functional molecule, can undergo changes in electronic spin state under laser irradiation.

[0042] The laser-inducible single molecule is selected from the ring-ring tinning iso-binary metal molecule, and its structural formula is shown below:

[0043] .

[0044] According to a specific embodiment of the present invention, the first graphene electrode and the second graphene electrode are nano-gap electrodes.

[0045] According to a specific embodiment of the present invention, the first graphene electrode and the second graphene electrode are made of single-layer graphene.

[0046] According to a specific embodiment of the present invention, the first graphene electrode and the second graphene electrode are array electrodes.

[0047] In the following embodiments, unless otherwise specified, the experimental methods used are conventional methods, and the materials and reagents used are commercially available, unless otherwise specified, and are carried out in accordance with the techniques or conditions described in the literature in this field or in accordance with the product instructions.

[0048] Example 1

[0049] The structural formula of the ring-shaped tinin iso-binary metal molecule is as follows:

[0050] ;

[0051] Its preparation process is as follows:

[0052] I. Preparation of Compound 1 .

[0053] Into a 50ml two-necked flask, compound 1 (400mg) and triethylamine (0.42ml) were dissolved in anhydrous ethanol (5ml), and the solution was added to the above-mentioned Schlenk flask under vigorous stirring using a syringe, and the mixture was stirred at 60°C for 3h. The reaction mixture was concentrated to 5ml by rotary evaporation, and the concentrate was added to n-hexane (10ml). After standing for 3-5 days, the precipitate was collected to give compound 2, which was characterized as follows:

[0054] 1 H NMR (500 MHz, deuterated chloroform): δ = 6.57 (s, 1H), 3.47 (s, 1H), 2.83 (s, 2H);

[0055] 13 C NMR (125 MHz, deuterated chloroform): δ = 172.94, 56.96, 53.56;

[0056] TOF-ESI (+) (m / z): C 16 H 32 N8O4 400.095.

[0057] II. Preparation of compound 2 .

[0058] Into a dry Schlenk flask, anhydrous ethanol (10ml) and dysprosium trichloride hexahydrate (376.86mg) were added while filling with nitrogen; compound 1 (400mg) and triethylamine (0.42ml) were dissolved in anhydrous ethanol (5ml), and the solution was added to the above-mentioned Schlenk flask under vigorous stirring using a syringe, and the mixture was stirred at 60°C for 3h. The reaction mixture was concentrated to 5ml by rotary evaporation, and the concentrate was added to n-hexane (10ml). After standing for 3-5 days, the precipitate was collected to give compound 2, which was characterized as follows:

[0059] 1 H NMR (500 MHz, deuterated chloroform): δ = 6.69 (s, 1H), 3.40 (s, 1H), 2.76 (s, 2H);

[0060] 13 C NMR (125 MHz, deuterated chloroform): δ = 149.70, 149.58, 53.35, 51.82;

[0061] TOF-ESI (+) (m / z): C 16 H 32 DyN8O4 564.2213.

[0062] III. Preparation of compound 3 .

[0063] The preparation process of compound 3 is the same as that of compound 2 except that the dysprosium trichloride hexahydrate (376.86 mg) is replaced by ytterbium trichloride hexahydrate (380.86 mg).

[0064] The characterization data of compound 3 are as follows:

[0065] 1 H NMR (500 MHz, chloroform-d): δ = 6.98 (s, 1H), 3.39 (s, 1H), 2.76 (s, 2H);

[0066] 13 C NMR (125 MHz, chloroform-d): δ = 149.51, 53.35, 51.76;

[0067] TOF-ESI (+) (m / z): C 16 H 32 N8O4Yb 574.2213.

[0068] IV. Preparation of cyclen iso-bis-nuclear metal molecules

[0069] In a dry Schlenk reaction flask, compound 2 (564 mg), compound 3 (574 mg), and acetonitrile (10 ml) were added, and nitrogen was filled; m-dichlorobenzene (147 mg) was dissolved in acetonitrile (5 ml) to obtain a m-dichlorobenzene acetonitrile solution, which was slowly dropped into the above-mentioned Schlenk reaction flask within 10 min, and the temperature was raised to 80°C under the condition of vigorous stirring, and the reaction was refluxed for 12 h, then cooled to room temperature, concentrated by rotary evaporation, to obtain a concentrate, which was separated and purified by column chromatography (eluted with a gradient of dichloromethane and methanol), the product was collected and the solvent was removed by rotary evaporation to obtain the following cyclen iso-bis-nuclear metal molecules:

[0070] ;

[0071] The characterization data thereof are as follows:

[0072] 1H NMR (500 MHz, Chloroform-d): δ = 7.21 - 7.15 (m, 1H), 6.98 (s, 2H), 6.69 (s, 2H), 3.53 (s, 1H), 3.48 (s, 1H), 3.39 (d, J = 6.6, 4H), 2.83 (td, J = 5.8, 0.9, 3H), 2.76 (s, 7H), 2.79 - 2.73 (m, 2H);

[0073] 13 C NMR (125 MHz, Chloroform-d): δ = 149.70, 149.63, 149.51, 146.92, 143.73, 143.31, 128.32, 116.52, 107.61, 53.43, 53.35, 53.02, 52.26, 52.26, 51.82, 51.76;

[0074] TOF-ESI (+) (m / z): C 38 H 66 DyN 16 O8Yb 1212.3931.

[0075] Example 2

[0076] A single-molecule spintronic device based on the pulse femtosecond laser control is prepared by using the cyclanolin isobinuclear metal molecule obtained in Example 1, and the process is as follows:

[0077] I. A graphene layer is prepared on a copper foil by using a chemical vapor deposition method.

[0078] Two clean copper foil pieces (10 cm long and 2 cm wide) are cut, soaked in glacial acetic acid for 20 min to remove surface oxides, then washed with ultrapure water and acetone, dried with a nitrogen gun, and then annealed in a tube furnace, maintaining the furnace temperature at 1030°C and the gas pressure at 2.3 Pa, and continuously passing in hydrogen to perform high-temperature annealing on the copper foil, and then passing in methane as a precursor to grow a graphene layer with a thickness of 0.35 nm.

[0079] II. A PMMA glue is spin-coated on the surface layer of the graphene layer to obtain a protective film thereon, and the process is as follows: a layer of PMMA glue is spin-coated on the graphene layer of the copper foil, and placed on a heating table, heated at 180°C for 2 min to form a PMMA protective film on the top layer of the graphene layer.

[0080] III. The graphene layer with the protective film is separated from the copper foil by using chemical etching to obtain a graphene layer with a protective film, and the process is as follows:

[0081] Copper foil was cut into 1cm×1cm square pieces and placed in a 2mol / L ferric chloride solution for 2 hours for etching treatment to remove the graphene layer with protective film from the copper foil. After the graphene layer was removed from the solution, it was washed with hydrochloric acid solution and ultrapure water to remove the residual ferric chloride on its surface, thus obtaining a graphene layer with PMMA protective film.

[0082] 4. Transfer the graphene layer covered with PMMA protective film to a clean silicon wafer (silicon substrate with 300nm silicon dioxide coating), let it air dry naturally, place it in acetone, and heat it at 60°C for 6 minutes. The acetone will dissolve the PMMA protective film, and you will get a silicon wafer covered with graphene layer.

[0083] V. Fabrication of graphene electrode pairs on silicon wafers coated with graphene layers.

[0084] Photoresist (AR-P5350) was spin-coated onto a silicon wafer coated with a graphene layer by first rotating it at 600 rpm / min for 6 seconds, and then at 4000 rpm / min for 40 seconds.

[0085] Then, the silicon wafer coated with photoresist was placed on a heating stage and heated at 110°C for 3 minutes to cure the photoresist. Subsequently, it was exposed using an ultraviolet exposure machine to leave the mask pattern on the silicon wafer. After immersing the silicon wafer in the developer for 15 seconds, it was fixed in ultrapure water and dried to obtain a silicon wafer with the marked pattern. Subsequently, using a thermal evaporation deposition machine, 8nm of metallic chromium and 80nm of metallic gold were deposited sequentially on the silicon wafer. Then, the silicon wafer was immersed in acetone for 2 hours, rinsed with acetone and dried to obtain a silicon wafer with the marked pattern on the surface. Subsequently, the strip mask was replaced, and the processes of coating, exposure, development, and fixing were repeated to prepare a 40μm wide graphene strip on the silicon wafer. The remaining graphene was removed by an oxygen plasma etching process to obtain a silicon wafer containing only the strip graphene.

[0086] Next, the electrode mask was replaced, and the above operation was repeated to deposit 8nm of metallic chromium and 80nm of metallic gold on the silicon wafer in sequence. After rinsing with acetone solution, a gold electrode-graphene strip-silicon wafer was obtained, with a total of 169 pairs of electrodes.

[0087] A layer of PMMA is spin-coated on the surface of the gold electrode-graphene strip-silicon wafer as a protective film. Subsequently, a dashed line etching is performed on the gold electrode-graphene strip-silicon wafer using an electron beam exposure machine to obtain a graphene array point electrode. The dashed line is located between each pair of gold electrodes, and the total length of the dashed line is 60 μm, each segment of the dashed line is 150 nm long, and the interval is 40 nm. After etching by an oxygen plasma etching machine, 315 conductive channels can be formed between each pair of gold electrodes, so that the graphene point electrode has good integration. Then, after developing and fixing, the dashed line window is etched by an oxygen plasma etching machine. In this process, the change in conductance between the graphene electrode pairs needs to be monitored in real time. When the conductance decreases to zero, it indicates that the graphene is cut off, and at this time, the end of the graphene electrode pair has formed a carboxyl group.

[0088] Six, the end of the graphene electrode pair forming a carboxyl group is placed in two flasks, then 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride (50 mg) prepared in Example 1 is added, and this process needs to be carried out three times to ensure that the two flasks are dry and oxygen-free, then pyridine (10 ml) is injected into the two flasks, and then placed in a light-proof environment for 48 h; then, after being cleaned with acetone and ultrapure water and dried, a single-molecule spintronic device based on pulsed femtosecond laser control is obtained.

[0089] With the help of a lock-in amplifier, the I-V characteristic curve of the current change with the bias voltage of the single-molecule spintronic device based on pulsed femtosecond laser control before and after femtosecond laser irradiation is tested under the condition that the bias voltage is-1-1 V, and the results are shown in Figure 2 As can be seen from the figure,

[0090] Low voltage region (-1.0 V-0 V): the absolute value of the current (negative current) of the curve after irradiation is greater than that before irradiation, which indicates that the conductive ability of the device is enhanced under negative bias voltage;

[0091] High voltage region (0 V-1.0 V): the current value (positive current) of the curve after irradiation is also higher than that before irradiation, which shows that the conductive ability of the device is also improved under positive bias voltage;

[0092] After femtosecond laser irradiation, the current of the single-molecule spintronic device in the whole voltage range increases, which indicates that laser irradiation treatment can enhance the conductive performance.

[0093] The time-resolved differential absorption (ΔA) spectrum of the single-molecule spintronic device based on pulsed femtosecond laser control is detected by a photoelectric combined detection device, and the detection process is as follows:

[0094] A femtosecond laser pulse with a width of 100 fs and a wavelength of 1030 nm, emitted in spatial form, is collimated by multiple coated mirrors and projected onto the first beam splitter. 50% of the light passes through the beam splitter and serves as pump light in the first optical system; the other 50% is reflected and acts as probe light in the second optical system.

[0095] In the first optical system, the pump light is reflected by a coated mirror to an optical parametric amplifier, where it is modulated into a 400nm wavelength laser. After being collimated by a mirror, it enters the aperture. After passing through the center of the aperture, it is frequency-modulated by a chopper to ensure that the laser frequency matches the reference frequency of the lock-in amplifier. Subsequently, it passes through a tunable attenuator, a linear polarizer, and a half-wave plate to form linearly polarized light with adjustable direction, which is then focused onto the center of a broadband optical fiber by a convex lens.

[0096] In the second optical system, the probe light is reflected by a coated mirror to a time delay platform. The optical path of the probe light is changed by electrically controlling the movement of the platform, thus achieving a femtosecond-level time delay. Afterward, the probe light is converted into a broadband (400-700nm) white light by a white light module, and then reflected by a mirror to an aperture. After passing through the aperture, it is converged at the center of the optical fiber by a tunable attenuator and a convex lens.

[0097] The pump light and probe light enter the same optical fiber and are guided into the multifunctional sample holder of the integrated physical property measurement system. By rotating the quarter-wave plate in the sample holder, left-handed or right-handed circularly polarized light is generated through rotation at different angles. This light is then projected through a lens onto a single-molecule spintronic device on the sample holder, which is controlled by a pulsed femtosecond laser. The integrated physical property measurement system then completes the test.

[0098] The single-molecule spintronic device based on pulsed femtosecond laser control prepared in this embodiment was placed into a comprehensive physical property measurement system. The spin quantum state of its functional molecule, a dinuclear metal molecule, was controlled by a pulsed femtosecond laser. The pulse was manipulated using a time delay system and a quarter-wave plate rotation angle, and its Rabi oscillation signal was measured. The results are as follows: Figure 3 As shown in the figure; △A in the figure represents the oscillating Rabi signal, and it can be seen from the figure that:

[0099] The signal was extremely strong in the initial stage, which indicates that the laser and the binuclear metal molecule of the ring ring were strongly coherently coupled in a very short time. Coherent coupling is a direct manifestation of quantum coherence. It breaks the independent system assumption of classical physics and shows the cooperative behavior of phase binding between microscopic particles. Coherent coupling between qubits is the key to realizing quantum logic gates and generating quantum entanglement.

[0100] The signal of the oscillation stage (tens of picoseconds to hundreds of picoseconds) appears periodic oscillation, which is a typical coherent performance of the Rabi oscillation particles repeatedly transition between the ground state and the excited state. The result shows that the cycloviolacin heterobinuclear metal molecule has a high response speed to the laser irradiation, and the functional molecule undergoes quantum state conversion after the laser irradiation.

[0101] Finally, it should be noted that: the above examples are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing examples, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing examples, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A single-molecule spintronic device based on pulsed femtosecond laser modulation, characterized in that, It includes a first graphene electrode, a laser-sensing single molecule, and a second graphene electrode, wherein the laser-sensing single molecule is connected to the first graphene electrode and the second graphene electrode respectively via amide bonds; The first graphene electrode and the second graphene electrode form a graphene electrode pair, and the laser-sensing single molecule, as a functional molecule, can undergo changes in its electronic spin state under laser irradiation. The laser-inducing single molecule is selected from the ring-ring tinning iso-binary metal molecule, and its structural formula is shown below: 。 2. The single-molecule spintronic device based on pulsed femtosecond laser modulation as described in claim 1, characterized in that, The first graphene electrode and the second graphene electrode are nano-gap electrodes.

3. The single-molecule spintronic device based on pulsed femtosecond laser modulation as described in claim 1, characterized in that, The first graphene electrode and the second graphene electrode are made of single-layer graphene.

4. The single-molecule spintronic device based on pulsed femtosecond laser modulation as described in claim 1, characterized in that, The first graphene electrode and the second graphene electrode are array electrodes.

5. A method for fabricating a single-molecule spintronic device based on pulsed femtosecond laser modulation, characterized in that, The method for fabricating a single-molecule spintronic device based on pulsed femtosecond laser control as described in any one of claims 1 to 4 comprises the following step of introducing laser-induced single molecules between graphene electrodes: S100, Prepare an organic solution containing laser-inducing single molecules and carbodiimide condensing agents; S200. Place the graphene electrode pair in the organic solution and react under light-proof and oxygen-free conditions for 24-72 hours to connect the laser-sensing single molecule between the graphene electrode pair, thereby obtaining a single-molecule spintronic device based on pulsed femtosecond laser control.

6. The method for fabricating a single-molecule spintronic device based on pulsed femtosecond laser control as described in claim 5, characterized in that, In step S100, the carbodiimide condensing agent is selected from 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloric acid.

7. The method for fabricating a single-molecule spintronic device based on pulsed femtosecond laser control as described in claim 5, characterized in that, In step S100, the solvent of the organic solution is selected from pyridine.

8. The method for fabricating a single-molecule spintronic device based on pulsed femtosecond laser control as described in claim 5, characterized in that, In step S200, the preparation of the graphene electrode pair includes the following steps: S210. A graphene layer is prepared on a copper foil using chemical vapor deposition to obtain a copper foil coated with a graphene layer. S220. Spin-coating PMMA adhesive onto the graphene layer surface of copper foil to obtain a protective film; PMMA stands for polymethyl methacrylate. S230. The graphene layer with a protective film is removed from the copper foil by chemical etching to obtain the graphene layer with a protective film. S240. Transfer the graphene layer with a protective film onto the substrate, and dissolve the PMMA adhesive with acetone to obtain the substrate with the graphene layer. S250. Graphene electrode pairs are prepared on a substrate coated with a graphene layer.

9. The method for fabricating a single-molecule spintronic device based on pulsed femtosecond laser control as described in claim 8, characterized in that, In step S240, the substrate is selected from silicon wafers.

10. The method for fabricating a single-molecule spintronic device based on pulsed femtosecond laser control as described in claim 5, characterized in that, Step S200 includes the process of detecting the optical and electrical properties of the obtained single-molecule spintronic device based on pulsed femtosecond laser control using an optoelectronic system.

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