Semiconductor device and vehicle

Abstract

This semiconductor device is provided with: a first semiconductor element; a first terminal located on one side of the first semiconductor element in the first direction; a protective layer covering at least a part of the first semiconductor element and being an insulator; and a first conductive member that is conductive to the first semiconductor element and the first terminal. And the protection layer is far away from the first terminal. The first conductive member is located between the first semiconductor element and the first terminal in the first direction. The first conductive member has: a first portion that overlaps the protective layer when viewed in a direction orthogonal to the first direction; and a second portion that is located on the opposite side of the first semiconductor element with respect to the first portion and that is connected to the first portion. The second portion protrudes from the protective layer when viewed in a direction orthogonal to the first direction.

Description

Technical Field

[0001] This disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device. Background Technology

[0002] Patent Document 1 discloses an example of a semiconductor module comprising a semiconductor device and a cooler. The cooler includes a housing with a hollow region and a heat sink. An opening communicating with the hollow region is provided in the housing. The heat sink is mounted to the housing in a manner that blocks the opening. A portion of the heat sink is housed within the hollow region. The semiconductor device is engaged with a portion of the heat sink extending outward from the hollow region. When refrigerant (cooling water, etc.) flows into the hollow region, the refrigerant comes into contact with the heat sink. Thus, the semiconductor device can be efficiently cooled via the heat sink.

[0003] However, in the structure of the semiconductor module disclosed in Patent Document 1, the cooling effect of the semiconductor device cannot be fully utilized relative to the size of the cooler.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: International Publication No. 2017 / 094370 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] One objective of this disclosure is to provide a semiconductor device that has been improved compared to the prior art. In particular, in view of the above, one objective of this disclosure is to provide a semiconductor device capable of achieving further improvements in cooling efficiency.

[0009] Solution for solving the problem

[0010] A semiconductor device provided by a first aspect of this disclosure includes: a semiconductor element; a first terminal located on one side of the semiconductor element in a first direction; a protective layer covering at least a portion of the semiconductor element and being an insulator; and a first conductive member conductive to the semiconductor element and the first terminal. The protective layer is located away from the first terminal. The first conductive member is located between the semiconductor element and the first terminal in the first direction. The first conductive member has: a first portion that overlaps with the protective layer when viewed in a direction orthogonal to the first direction; and a second portion located on the opposite side of the semiconductor element, based on the first portion, and connected to the first portion. When viewed in a direction orthogonal to the first direction, the second portion protrudes from the protective layer.

[0011] The vehicle provided by the second embodiment of this disclosure includes a drive source and a semiconductor device. The semiconductor device is electrically connected to the drive source. Compared to the semiconductor device provided by the first embodiment of this disclosure, the semiconductor device further includes a second terminal and a signal terminal. The semiconductor element included in the semiconductor device includes a first electrode, a second electrode, and a gate electrode. A first conductive component included in the semiconductor device is electrically connected to the first electrode and the first terminal, respectively. The second terminal is electrically connected to the second electrode. The signal terminal is electrically connected to the gate electrode.

[0012] Invention Effects

[0013] Based on the above structure, cooling efficiency can be further improved.

[0014] Other features and advantages of this disclosure will become more apparent from the following detailed description based on the accompanying drawings. Attached Figure Description

[0015] Figure 1 This is a top view of a semiconductor device according to the first embodiment of this disclosure.

[0016] Figure 2 Is with Figure 1 The corresponding top view, seen through the casing.

[0017] Figure 3 Is with Figure 2 The corresponding top view is also shown through the first terminal.

[0018] Figure 4 yes Figure 1 The semiconductor device shown is viewed from below.

[0019] Figure 5 yes Figure 1 The right-side view of the semiconductor device shown.

[0020] Figure 6 yes Figure 1 Left side view of the semiconductor device shown.

[0021] Figure 7 It is along Figure 3 A sectional view along line VII-VII.

[0022] Figure 8 It is along Figure 3 A cross-sectional view of line VIII-VIII.

[0023] Figure 9 It is along Figure 3 A cross-sectional view of the IX-IX line.

[0024] Figure 10 yes Figure 7A magnified view of a portion of the image.

[0025] Figure 11 yes Figure 8 A magnified view of a portion of the image.

[0026] Figure 12 This is a partially enlarged cross-sectional view of a semiconductor device, which is a variation of the first embodiment of this disclosure.

[0027] Figure 13 This is an explanation Figure 1 A cross-sectional view showing the effect of the semiconductor device.

[0028] Figure 14 This is a cross-sectional view of a semiconductor device according to a second embodiment of the present disclosure, corresponding to Figure 7 .

[0029] Figure 15 yes Figure 14 The cross-sectional view of the semiconductor device shown corresponds to Figure 8 .

[0030] Figure 16 yes Figure 14 A magnified view of a portion of the image.

[0031] Figure 17 This is a cross-sectional view of a semiconductor device according to a third embodiment of this disclosure, corresponding to... Figure 7 .

[0032] Figure 18 yes Figure 17 The cross-sectional view of the semiconductor device shown corresponds to Figure 8 .

[0033] Figure 19 yes Figure 17 A magnified view of a portion of the image.

[0034] Figure 20 This is a top view of a semiconductor device according to the fourth embodiment of this disclosure.

[0035] Figure 21 yes Figure 20 The semiconductor device shown is viewed from below.

[0036] Figure 22 It is along Figure 20 A sectional view of the XXII-XXII line.

[0037] Figure 23 It is along Figure 20 A cross-sectional view of lines XXIII-XXIII.

[0038] Figure 24 This is a top view of a semiconductor device according to the fifth embodiment of the present disclosure, through the housing.

[0039] Figure 25 It is along Figure 24 A cross-sectional view of the XXV-XXV line.

[0040] Figure 26 It is along Figure 24 A cross-sectional view of the XXVI-XXVI line.

[0041] Figure 27 It is along Figure 24 A sectional view of the XXVII-XXVII line.

[0042] Figure 28 yes Figure 25 A magnified view of a portion of the image.

[0043] Figure 29 yes Figure 26 A magnified view of a portion of the image.

[0044] Figure 30 It is equipped with Figure 24 A schematic diagram of a vehicle carrying a semiconductor device. Detailed Implementation

[0045] The manner in which this disclosure is carried out is described with reference to the accompanying drawings.

[0046] First implementation method:

[0047] based on Figures 1 to 11 The semiconductor device A10 according to the first embodiment of this disclosure will be described. Generally, the semiconductor device A10 is used in power conversion circuits such as inverters. The semiconductor device A10 includes a first terminal 11, a second terminal 12, a first signal terminal 14, a second signal terminal 15, a plurality of first semiconductor elements 21, a plurality of first conducting components 31, a plurality of second conducting components 32, a plurality of third conducting components 33, a plurality of fourth conducting components 34, a plurality of protective layers 40, and a housing 50. For ease of understanding, Figure 2 Through the housing 50. In Figure 2 In the diagram, the through-wall 50 is represented by an imaginary line (double-dotted line). Figure 3 For ease of understanding, the first terminal 11 and the housing 50 are shown in the diagram. Figure 3 In the diagram, the first terminal 11 and the housing 50 are represented by imaginary lines.

[0048] In the description of semiconductor device A10, for convenience, the normal direction of the first mounting surface 121A of the second terminal 12, which will be described later, is referred to as the "first direction z". A direction orthogonal to the first direction z is referred to as the "second direction x". A direction orthogonal to both the first direction z and the second direction x is referred to as the "third direction y".

[0049] like Figures 7-9 As shown, the housing 50 supports the first terminal 11, the second terminal 12, the first signal terminal 14, and the second signal terminal 15, respectively. The housing 50 is made of an insulator containing resin. Alternatively, the housing 50 may be made of a conductor containing a metal such as aluminum (Al).

[0050] like Figure 1 , Figure 4 , Figure 5 as well as Figure 6 As shown, the housing 50 has a top surface 51, a bottom surface 52, a first side surface 531, a second side surface 532, a third side surface 533, and a fourth side surface 534. The top surface 51 faces one side in the first direction z. The bottom surface 52 faces the side opposite to the top surface 51 in the first direction z. The first side surface 531 and the second side surface 532 face opposite sides to each other in the second direction x. The third side surface 533 and the fourth side surface 534 face opposite sides to each other in the third direction y.

[0051] like Figures 7-9 As shown, a hollow portion 54 is provided in the housing 50. Atmosphere flows into the hollow portion 54. Furthermore, as... Figure 13 As shown, the hollow section 54 can be structured to be always filled with refrigerant 60. Multiple first conductive components 31, multiple second conductive components 32, multiple third conductive components 33, multiple fourth conductive components 34, and multiple protective layers 40 are housed within the hollow section 54. Figure 13 The refrigerant 60 shown must be an insulator. In this disclosure, the composition of the refrigerant 60 is not limited as long as it is an insulator.

[0052] like Figure 1 , Figure 4 , Figure 5 as well as Figure 6 As shown, the housing 50 is provided with an inlet 55 and an outlet 56. The inlet 55 opens on the third side 533 and communicates with the hollow portion 54. The outlet 56 opens on the fourth side 534 and communicates with the hollow portion 54. Within the housing 50, Figure 13 The refrigerant 60 shown flows into the hollow section 54 from the inlet 55. The refrigerant 60 flowing into the hollow section 54 is discharged from the outlet 56. Figure 3 As shown, the inlet 55 and outlet 56 are located on opposite sides of each other in the third direction y, with reference to a plurality of first conductive components 31.

[0053] like Figures 7-9As shown, the first terminal 11 is located on one side of the plurality of first semiconductor elements 21 in a first direction z. In the semiconductor device A10, the first terminal 11 is located between the plurality of first semiconductor elements 21 and the top surface 51 of the housing 50 in the first direction z. The first terminal 11 is, for example, a metal plate containing copper (Cu). The first terminal 11 has a first base 111 and a first extension 112. The first base 111 is housed in the hollow portion 54 of the housing 50. The first base 111 is a strip extending in a second direction x. The first extension 112 is electrically connected to one side of the first base 111 in the second direction x. The first extension 112 is supported on the housing 50. A portion of the first extension 112 protrudes outward from the second side 532 of the housing 50.

[0054] like Figures 7-9 As shown, the second terminal 12 is located on the side opposite to the first terminal 11 in the first direction z, with reference to a plurality of first semiconductor elements 21. In the semiconductor device A10, the second terminal 12 is located between the plurality of first semiconductor elements 21 and the bottom surface 52 of the housing 50 in the first direction z. The second terminal 12 is, for example, a metal plate containing copper. The second terminal 12 has a second base 121 and a second extension 122. The second base 121 is housed in the hollow portion 54 of the housing 50. The second base 121 is a strip extending in the second direction x. The second base 121 has a first mounting surface 121A facing the same side as the top surface 51 of the housing 50 in the first direction z. The second extension 122 is electrically connected to one side of the second base 121 in the second direction x. The second extension 122 is supported on the housing 50. A portion of the second extension 122 protrudes outward from the first side surface 531 of the housing 50.

[0055] like Figures 7-9As shown, a plurality of first semiconductor elements 21 are located in the first direction z between the first base 111 of the first terminal 11 and the second base 121 of the second terminal 12. When viewed in the first direction z (top view), the plurality of first semiconductor elements 21 overlap with the first mounting surface 121A of the second base 121. The plurality of first semiconductor elements 21 are all identical elements. The plurality of first semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). In addition, the plurality of first semiconductor elements 21 can be field-effect transistors including MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors) and bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors). In the description of semiconductor device A10, the plurality of first semiconductor elements 21 are exemplified by an n-channel, vertically oriented MOSFET. The plurality of first semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate is composed of silicon carbide (SiC). A plurality of first semiconductor elements 21 are arranged along a second direction x.

[0056] like Figure 3 and Figure 11 As shown, the plurality of first semiconductor elements 21 each have a first electrode 211, a second electrode 212 and a first gate electrode 213.

[0057] like Figure 11 As shown, the first electrode 211 is located on the side opposite to the first base 111 of the first terminal 11 in the first direction z. The first electrode 211 is connected to the first terminal 11. The current corresponding to the power converted by the first semiconductor element 21 flows in the first electrode 211. That is, the first electrode 211 is equivalent to the source of the first semiconductor element 21.

[0058] like Figure 11 As shown, the second electrode 212 is positioned opposite the second base 121 of the second terminal 12 in the first direction z. The second electrode 212 is connected to the second terminal 12. A current corresponding to the electrical current before conversion by the first semiconductor element 21 flows in the second electrode 212. That is, the second electrode 212 corresponds to the drain of the first semiconductor element 21.

[0059] like Figure 11As shown, the first gate electrode 213 is located on the same side as the first electrode 211 in the first direction z. The first gate electrode 213 is connected to the first signal terminal 14. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. Figure 3 As shown, when viewed in the first direction z, the area of ​​the first gate electrode 213 is smaller than the area of ​​the first electrode 211.

[0060] like Figures 7-9 As shown, multiple protective layers 40 respectively cover at least a portion of each of the multiple first semiconductor elements 21. The multiple protective layers 40 are insulators containing resin. Alternatively, the multiple protective layers 40 may be insulators containing ceramics such as aluminum nitride (AlN). The multiple protective layers 40 are respectively located away from the first terminal 11 and the second terminal 12.

[0061] Each of the multiple first conducting components 31 is respectively connected to any one of the first electrodes 211 and the first terminal 11 of the multiple first semiconductor elements 21. For example... Figures 7-9 As shown, a plurality of first conductive components 31 are located in the first direction z between a plurality of first semiconductor elements 21 and the first base 111 of the first terminal 11. The plurality of first conductive components 31 are, for example, metal sheets containing copper. Each of the plurality of first conductive components 31 is, for example, cylindrical. One side of each of the plurality of first conductive components 31 in the first direction z is electrically connected to the first electrode 211 of any one of the plurality of first semiconductor elements 21. The other side of each of the plurality of first conductive components 31 in the first direction z is electrically connected to the first base 111 of the first terminal 11. Figure 10 and Figure 11 As shown, the dimension L1 of the first direction z of each of the multiple first conducting components 31 is greater than the dimension t of the first direction z of each of the multiple protective layers 40.

[0062] like Figure 10 and Figure 11As shown, each of the plurality of first conductive components 31 has a first portion 311 and a second portion 312. The first portion 311 is electrically connected to the first electrode 211 of any one of the plurality of first semiconductor elements 21 via a bonding layer 29. The bonding layer 29 is solder. Alternatively, the bonding layer 29 may be a sintered metal containing silver (Ag) or the like. When viewed in a direction orthogonal to the first direction z, the first portion 311 overlaps with any one of the plurality of protective layers 40. In the semiconductor device A10, the first portion 311 is connected to any one of the plurality of protective layers 40. The second portion 312 is located on the side opposite to the plurality of first semiconductor elements 21, with the first portion 311 as a reference. The second portion 312 is connected to the first portion 311. The second portion 312 is electrically connected to the first base 111 of the first terminal 11 via the bonding layer 29. When viewed in a direction orthogonal to the first direction z, the second portion 312 protrudes from any one of the plurality of protective layers 40. The dimension of the first direction z of the second part 312 is larger than the dimension of the direction of the second part 312 that is orthogonal to the first direction z.

[0063] Multiple second conducting components 32 are respectively connected to any one of the second electrodes 212 and the second terminal 12 of each of the multiple first semiconductor elements 21. For example... Figures 7-9 As shown, a plurality of second conductive components 32 are located in the first direction z between a plurality of first semiconductor elements 21 and the second base 121 of the second terminal 12. The plurality of second conductive components 32 are, for example, metal sheets containing copper. Each of the plurality of second conductive components 32 is, for example, cylindrical. One side of each of the plurality of second conductive components 32 in the first direction z is electrically connected to the second electrode 212 of any one of the plurality of first semiconductor elements 21. The other side of each of the plurality of second conductive components 32 in the first direction z is electrically connected to the first mounting surface 121A of the second base 121. Figure 10 and Figure 11 As shown, the dimension L2 of the first direction z of each of the multiple second conductive components 32 is greater than the dimension t of the first direction z of each of the multiple protective layers 40.

[0064] like Figure 10 and Figure 11As shown, each of the plurality of second conductive components 32 has a third portion 321 and a fourth portion 322. The third portion 321 is electrically connected to the second electrode 212 of any one of the plurality of first semiconductor elements 21 via a bonding layer 29. When viewed in a direction orthogonal to the first direction z, the third portion 321 overlaps with any one of the plurality of protective layers 40. In the semiconductor device A10, the third portion 321 is connected to any one of the plurality of protective layers 40. The fourth portion 322 is located on the side opposite to the plurality of first semiconductor elements 21 with reference to the third portion 321. The fourth portion 322 is connected to the third portion 321. The fourth portion 322 is electrically connected to the first mounting surface 121A of the second base 121 of the second terminal 12 via the bonding layer 29. When viewed in a direction orthogonal to the first direction z, the fourth portion 322 protrudes from any one of the plurality of protective layers 40. The dimension of the fourth portion 322 in the first direction z is larger than the dimension of the fourth portion 322 in the direction orthogonal to the first direction z.

[0065] like Figure 2 As shown, the first signal terminal 14 is located on the third y-direction side of the first terminal 11. The first signal terminal 14 is supported on the housing 50. The first signal terminal 14 is connected to the first gate electrode 213 of each of the plurality of first semiconductor elements 21. A gate voltage for driving the plurality of first semiconductor elements 21 is applied to the first signal terminal 14. The first signal terminal 14 is, for example, a metal lead containing copper. Figure 3 As shown, the first signal terminal 14 has an interior 141 and an exterior 142. The interior 141 is housed within the housing 50. A portion of the interior 141 is housed within the hollow portion 54 of the housing 50. The interior 141 includes a portion extending in the second direction x. The exterior 142 is connected to the interior 141. Figure 6 and Figure 8 As shown, the outer part 142 protrudes outward from the third side 533 of the housing 50.

[0066] Multiple third conducting components 33 are respectively connected to any one of the first gate electrodes 213 of the multiple first semiconductor elements 21 and the first signal terminal 14. For example... Figure 3 As shown, multiple third conductive components 33 extend along a third direction y. The multiple third conductive components 33 are, for example, metal leads containing copper. Figure 11 As shown, multiple protective layers 40 respectively cover a portion of each of the multiple third conducting components 33. The third conducting component 33 is electrically connected, via a bonding layer 29, to the first gate electrode 213 of any one of the multiple first semiconductor elements 21 on one side in the third direction y. The third conducting component 33 is electrically connected, via a bonding layer 29, to the interior 141 of the first signal terminal 14 on the other side in the first direction z.

[0067] like Figure 2As shown, the second signal terminal 15 is located on the same side as the first signal terminal 14 in the third direction y, with the first terminal 11 as a reference. The second signal terminal 15 is supported on the housing 50. The second signal terminal 15 is conductive to the first electrode 211 of each of the plurality of first semiconductor elements 21. A voltage at the same potential as the voltage applied to the first electrode 211 of each of the plurality of first semiconductor elements 21 is applied to the second signal terminal 15. The second signal terminal 15 is, for example, a metal lead containing copper. Figure 3 As shown, the second signal terminal 15 has an inner portion 151 and an outer portion 152. The inner portion 151 is housed within the housing 50. A portion of the inner portion 151 is housed within the hollow portion 54 of the housing 50. The inner portion 151 includes a portion extending in the second direction x. Figure 8 and Figure 9 As shown, the inner 151 is located closer to the top surface 51 of the housing 50 than the inner 141 of the first signal terminal 14. The outer 152 is connected to the inner 151. Figure 6 and Figure 9 As shown, the outer part 152 protrudes outward from the third side 533 of the housing 50.

[0068] Multiple fourth conducting components 34 are respectively connected to any one of the first electrodes 211 and the second signal terminal 15 of each of the multiple first semiconductor elements 21. For example... Figure 3 As shown, when viewed in the first direction z, multiple fourth conducting components 34 extend along the third direction y, respectively. Figure 9 As shown, a plurality of fourth conductive components 34 respectively span the interior 141 of the first signal terminal 14. The plurality of fourth conductive components 34 are, for example, metal leads containing copper. A plurality of protective layers 40 respectively cover a portion of each of the plurality of fourth conductive components 34. One side of each of the plurality of fourth conductive components 34 in the third direction y is electrically connected to the first electrode 211 of any one of the plurality of first semiconductor elements 21. The other side of each of the plurality of fourth conductive components 34 in the first direction z is electrically connected to the interior 151 of the second signal terminal 15.

[0069] Next, based on Figure 12 Here, a modified example of semiconductor device A10, semiconductor device A11, will be described. Figure 12 The position of the cross section and Figure 10 The cross-sectional position corresponds to that.

[0070] like Figure 12As shown, in the semiconductor device A11, multiple first through-sections 41 and multiple second through-sections 42 are respectively provided in multiple protective layers 40. The multiple first through-sections 41 are recessed in the first direction z from the side where the first base 111 of the first terminal 11 is located. The first portions 311 of each of the multiple first conductive members 31 are respectively housed in the multiple first through-sections 41. The multiple second through-sections 42 are recessed in the first direction z from the side where the second base 121 of the second terminal 12 is located. The third portions 321 of each of the multiple second conductive members 32 are respectively housed in the multiple second through-sections 42. In the semiconductor device A11, the first portions 311 of each of the multiple first conductive members 31 and the third portions 321 of each of the multiple second conductive members 32 are located away from the multiple protective layers 40.

[0071] Next, the function and effect of semiconductor device A10 will be explained.

[0072] Semiconductor device A10 includes a first semiconductor element 21, a first terminal 11, a protective layer 40, and a first conductive member 31. The protective layer 40 covers at least a portion of the first semiconductor element 21 and is located away from the first terminal 11. The first conductive member 31 is located between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first conductive member 31 has a first portion 311 and a second portion 312. When viewed in a direction orthogonal to the first direction z, the first portion 311 overlaps with the protective layer 40. When viewed in a direction orthogonal to the first direction z, the second portion 312 protrudes from the protective layer 40. By adopting this structure, the second portion 312 is located in the gap between the protective layer 40 and the first terminal 11 in the first direction z. Thus, as Figure 13 As shown, when the refrigerant 60 flows into the hollow portion 54 of the housing 50, the refrigerant 60 comes into direct contact with the second portion 312, thus increasing the cooling efficiency of the semiconductor device A10 compared to the conventional method. Therefore, according to this structure, a further improvement in cooling efficiency can be achieved in the semiconductor device A10.

[0073] The dimension L1 of the first conductive component 31 in the first direction z is greater than the dimension t of the first direction z of the protective layer 40. By adopting this structure, the energy loss of the refrigerant 60 caused by the rapid contraction of the gap between the protective layer 40 and the first terminal 11 in the first direction z can be reduced.

[0074] The dimension of the second portion 312 of the first conductive member 31 in the first direction z is larger than the dimension of the second portion 312 in the direction orthogonal to the first direction z. By adopting this structure, the energy loss of the refrigerant 60 caused by the rapid contraction of the gap between the protective layer 40 and the first terminal 11 in the first direction z can be further reduced.

[0075] The semiconductor device A10 also includes a second terminal 12 and a second conductive member 32. A protective layer 40 is located away from the second terminal 12. The second conductive member 32 is positioned between the first semiconductor element 21 and the second terminal 12 in a first direction z. The second conductive member 32 has a third portion 321 and a fourth portion 322. When viewed in a direction orthogonal to the first direction z, the third portion 321 overlaps with the protective layer 40. When viewed in a direction orthogonal to the first direction z, the fourth portion 322 protrudes from the protective layer 40. By adopting this structure, the fourth portion 322 is located in the gap between the protective layer 40 and the second terminal 12 in the first direction z. Thus, as... Figure 13 As shown, when the refrigerant 60 flows into the hollow portion 54 of the housing 50, the refrigerant 60 directly contacts not only the second portion 312 of the first conductive member 31, but also the fourth portion 322. Therefore, the cooling efficiency of the semiconductor device A10 is further increased compared to the past.

[0076] The dimension of the fourth portion 322 of the second conductive member 32 in the first direction z is larger than the dimension of the fourth portion 322 in the direction orthogonal to the first direction z. By adopting this structure, the energy loss of the refrigerant 60 flow caused by the rapid contraction of the gap between the protective layer 40 and the second terminal 12 in the first direction z can be reduced.

[0077] The first part 311 of the first conductive component 31 and the third part 321 of the second conductive component 32 are respectively connected to the protective layer 40. By adopting this structure, the generation of leakage current from the first semiconductor element 21 can be suppressed.

[0078] Semiconductor device A10 also includes a first signal terminal 14 and a third conductive component 33. The third conductive component 33 is electrically connected to the first gate electrode 213 of the first semiconductor element 21 and the first signal terminal 14, respectively. A portion of the third conductive component 33 is covered by a protective layer 40. By adopting this structure, the third conductive component 33 and the first semiconductor element 21 can be held together in the protective layer 40. Therefore, during the manufacture of semiconductor device A10, the third conductive component 33 can be easily electrically connected to the first signal terminal 14.

[0079] The semiconductor device A10 also includes a housing 50 that supports the first terminal 11, the second terminal 12, and the first signal terminal 14. A hollow portion 54, an inlet 55, and an outlet 56 are provided in the housing 50. A protective layer 40 and a first conductive member 31 are housed in the hollow portion 54. The inlet 55 and the outlet 56 are located on opposite sides of each other in a direction orthogonal to the first direction z, with reference to the first conductive member 31. By employing this structure, the refrigerant 60 can be guided in a manner that allows it to easily come into direct contact with the first conductive member 31.

[0080] Second implementation method:

[0081] based on Figures 14-16 The semiconductor device A20 according to the second embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the aforementioned semiconductor device A10 are labeled with the same reference numerals, and repeated descriptions are omitted. Figure 14 The cross-sectional position and the representation of semiconductor device A10 Figure 7 The cross-sectional position corresponds to that. Figure 15 The cross-sectional position and the representation of semiconductor device A10 Figure 8 The cross-sectional position corresponds to that.

[0082] The semiconductor device A20 differs from the semiconductor device A10 in that it does not have multiple second conducting components 32.

[0083] like Figures 14-16 As shown, the second electrode 212 of each of the plurality of first semiconductor elements 21 is electrically bonded to the first mounting surface 121A of the second base 121 of the second terminal 12 via the bonding layer 29.

[0084] Next, the function and effect of the semiconductor device A20 will be explained.

[0085] Semiconductor device A20 includes a first semiconductor element 21, a first terminal 11, a protective layer 40, and a first conductive member 31. The protective layer 40 covers at least a portion of the first semiconductor element 21 and is located away from the first terminal 11. The first conductive member 31 is located between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first conductive member 31 has a first portion 311 and a second portion 312. When viewed in a direction orthogonal to the first direction z, the first portion 311 overlaps with the protective layer 40. When viewed in a direction orthogonal to the first direction z, the second portion 312 protrudes from the protective layer 40. Therefore, according to this structure, further improvement in cooling efficiency can be achieved in semiconductor device A20. Moreover, by having a structure common to semiconductor device A10, semiconductor device A20 achieves the same functional effects as semiconductor device A10.

[0086] In semiconductor device A20, the second electrode 212 of the first semiconductor element 21 is electrically connected to the second terminal 12. By adopting this structure, the second conductive component 32 is not required in semiconductor device A20. As a result, the length of the conductive path between the second electrode 212 and the second terminal 12 is further shortened, thereby enabling a reduction in parasitic inductance in semiconductor device A20.

[0087] Third implementation method:

[0088] based on Figures 17-19 The semiconductor device A30 according to the third embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the aforementioned semiconductor device A10 are labeled with the same reference numerals, and repeated descriptions are omitted. Figure 17 The cross-sectional position and the representation of semiconductor device A10 Figure 7 The cross-sectional position corresponds to that. Figure 18 The cross-sectional position and the representation of semiconductor device A10 Figure 8 The cross-sectional position corresponds to that.

[0089] In semiconductor device A30, the structure of the plurality of first conducting components 31 and the plurality of second conducting components 32 is different from that of semiconductor device A10.

[0090] like Figures 17-19 As shown, the dimension L2 of the first direction z of each of the plurality of second conducting components 32 is greater than the dimension L1 of the first direction z of each of the plurality of first conducting components 31. Figure 19 As shown, each of the plurality of first conductive components 31 has a second portion 312 having a first circumferential surface 312A facing a direction orthogonal to the first direction z. Each of the plurality of second conductive components 32 has a fourth portion 322 having a second circumferential surface 322A facing a direction orthogonal to the first direction z. The area of ​​the second circumferential surface 322A is larger than the area of ​​the first circumferential surface 312A.

[0091] Next, the function and effect of the semiconductor device A30 will be explained.

[0092] Semiconductor device A30 includes a first semiconductor element 21, a first terminal 11, a protective layer 40, and a first conductive member 31. The protective layer 40 covers at least a portion of the first semiconductor element 21 and is located away from the first terminal 11. The first conductive member 31 is located between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first conductive member 31 has a first portion 311 and a second portion 312. When viewed in a direction orthogonal to the first direction z, the first portion 311 overlaps with the protective layer 40. When viewed in a direction orthogonal to the first direction z, the second portion 312 protrudes from the protective layer 40. Therefore, according to this structure, further improvement in cooling efficiency can be achieved in semiconductor device A30. Moreover, by having a structure common to semiconductor device A10, semiconductor device A30 achieves the same functional effects as semiconductor device A10.

[0093] In the semiconductor device A30, the second portion 312 of the first conducting member 31 has a first peripheral surface 312A facing a direction orthogonal to the first direction z. The fourth portion 322 of the second conducting member 32 has a second peripheral surface 322A facing a direction orthogonal to the first direction z. By adopting this structure, as Figure 13As shown, when the refrigerant 60 flows into the hollow portion 54 of the housing 50, the contact area of ​​the second conductive member 32 relative to the refrigerant 60 is larger than that of the first conductive member 31. Therefore, in the first semiconductor element 21, heat emitted from the second electrode 212 is more easily released to the outside than heat emitted from the first electrode 211.

[0094] Fourth implementation method:

[0095] based on Figures 20-23 The semiconductor device A40 according to the fourth embodiment of this disclosure will be described. In these figures, the same reference numerals are used for elements that are the same as those for the semiconductor device A10 described above, and repeated descriptions are omitted.

[0096] In semiconductor device A40, the structure of the first terminal 11 and the second terminal 12 is different from that of semiconductor device A10.

[0097] like Figure 20 , Figure 22 and Figure 23 As shown, the first base 111 of the first terminal 11 protrudes outward from the top surface 51 of the housing 50. Unlike the semiconductor device A10, the first terminal 11 does not have a first extension 112.

[0098] like Figures 21-23 As shown, the second base 121 of the second terminal 12 protrudes outward from the bottom surface 52 of the housing 50. Unlike the semiconductor device A10, the second terminal 12 does not have a second extension 122.

[0099] Next, the function and effect of the semiconductor device A40 will be explained.

[0100] Semiconductor device A40 includes a first semiconductor element 21, a first terminal 11, a protective layer 40, and a first conductive member 31. The protective layer 40 covers at least a portion of the first semiconductor element 21 and is located away from the first terminal 11. The first conductive member 31 is located between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first conductive member 31 has a first portion 311 and a second portion 312. When viewed in a direction orthogonal to the first direction z, the first portion 311 overlaps with the protective layer 40. When viewed in a direction orthogonal to the first direction z, the second portion 312 protrudes from the protective layer 40. Therefore, according to this structure, further improvement in cooling efficiency can be achieved in semiconductor device A40. Moreover, by having a structure common to semiconductor device A10, semiconductor device A40 achieves the same functional effects as semiconductor device A10.

[0101] In the semiconductor device A40, a first terminal 11 is exposed to the outside from the top surface 51 of the housing 50. A second terminal 12 is exposed to the outside from the bottom surface 52 of the housing 50. By adopting this structure, the dimension of the semiconductor device A40 in the first direction z can be further reduced.

[0102] Fifth implementation method:

[0103] based on Figures 24-29 The semiconductor device A50 according to the fifth embodiment of this disclosure will be described. In these figures, elements that are the same as or similar to those in the aforementioned semiconductor device A10 are labeled with the same reference numerals, and repeated descriptions are omitted. Here, for ease of understanding, Figure 24 Through the housing 50. In Figure 24 In the diagram, the through-shell 50 is represented by an imaginary line.

[0104] In semiconductor device A50, relative to semiconductor device A10, it also includes a third terminal 13, a third signal terminal 16, a fourth signal terminal 17, a plurality of second semiconductor elements 22, a plurality of fifth conducting components 35, a plurality of sixth conducting components 36, a plurality of seventh conducting components 37, and a plurality of eighth conducting components 38.

[0105] In semiconductor device A50, a half-bridge circuit is configured, comprising multiple first semiconductor elements 21 and multiple second semiconductor elements 22. Semiconductor device A50 converts direct current (DC) power supplied to second terminal 12 and third terminal 13 into alternating current (AC) power via the multiple first semiconductor elements 21 and multiple second semiconductor elements 22. Second terminal 12 is a P-terminal (positive). Third terminal 13 is an N-terminal (negative). The converted AC power is input from first terminal 11 to power supply objects such as motors.

[0106] like Figure 25 As shown, the third terminal 13 is located on the opposite side of the second terminal 12 in the first direction z, with reference to the first terminal 11. In the semiconductor device A50, the third terminal 13 is located in the first direction z between a plurality of second semiconductor elements 22 and the top surface 51 of the housing 50. The third terminal 13 is, for example, a metal plate containing copper. The third terminal 13 has a third base 131 and a third extension 132. The third base 131 is housed in the hollow portion 54 of the housing 50. The third base 131 is a strip extending in the second direction x. The third extension 132 is electrically connected to one side of the third base 131 in the second direction x. The third extension 132 is supported on the housing 50. A portion of the third extension 132 protrudes outward from the first side 531 of the housing 50. When viewed in the first direction z, the third extension 132 overlaps with the second extension 122 of the second terminal 12.

[0107] like Figures 25-27As shown, a plurality of second semiconductor elements 22 are located in the first direction z between the first base 111 of the first terminal 11 and the third base 131 of the third terminal 13. When viewed in the first direction z, the plurality of second semiconductor elements 22 overlap with the second mounting surface 111A of the first base 111. The second mounting surface 111A faces the same side in the first direction z as the first mounting surface 121A of the second base 121 of the second terminal 12. The plurality of second semiconductor elements 22 are the same elements as the plurality of first semiconductor elements 21. Therefore, the plurality of second semiconductor elements 22 are n-channel MOSFETs with a vertical configuration. The plurality of second semiconductor elements 22 are arranged along the second direction x.

[0108] like Figure 29 As shown, the plurality of second semiconductor elements 22 each have a third electrode 221, a fourth electrode 222 and a second gate electrode 223.

[0109] like Figure 29 As shown, the third electrode 221 is located on the side opposite to the third base 131 of the third terminal 13 in the first direction z. The third electrode 221 is connected to the third terminal 13. The current corresponding to the power converted by the second semiconductor element 22 flows in the third electrode 221. That is, the third electrode 221 is equivalent to the source of the second semiconductor element 22.

[0110] like Figure 29 As shown, the fourth electrode 222 is positioned opposite the first base 111 of the first terminal 11 in the first direction z. The fourth electrode 222 is connected to the first terminal 11. A current corresponding to the electrical current before conversion by the second semiconductor element 22 flows in the fourth electrode 222. That is, the fourth electrode 222 is equivalent to the drain of the second semiconductor element 22.

[0111] like Figure 29 As shown, the second gate electrode 223 is located on the same side as the third electrode 221 in the first direction z. The second gate electrode 223 is connected to the third signal terminal 16. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. When viewed in the first direction z, the area of ​​the second gate electrode 223 is smaller than the area of ​​the third electrode 221.

[0112] like Figures 25-27 As shown, multiple protective layers 40 respectively cover at least a portion of each of the multiple first semiconductor elements 21 and at least a portion of each of the multiple second semiconductor elements 22. The multiple protective layers 40 are respectively located away from the first terminal 11, the second terminal 12 and the third terminal 13.

[0113] Multiple fifth conducting components 35 are respectively connected to any one of the third electrodes 221 and the third terminal 13 of the multiple second semiconductor elements 22. For example... Figures 25-27As shown, a plurality of fifth conductive components 35 are located in the first direction z between a plurality of second semiconductor elements 22 and the third base 131 of the third terminal 13. The plurality of fifth conductive components 35 are housed in the hollow portion 54 of the housing 50. The plurality of fifth conductive components 35 are, for example, metal sheets containing copper. Each of the plurality of fifth conductive components 35 is, for example, cylindrical. One side of each of the plurality of fifth conductive components 35 in the first direction z is electrically connected to the third electrode 221 of any one of the plurality of second semiconductor elements 22. The other side of each of the plurality of fifth conductive components 35 in the first direction z is electrically connected to the third base 131 of the third terminal 13. Figure 28 and Figure 29 As shown, the dimension L3 of the first direction z of each of the plurality of fifth conductive components 35 is greater than the dimension t of the first direction z of each of the plurality of protective layers 40.

[0114] like Figure 28 and Figure 29 As shown, each of the plurality of fifth conductive components 35 has a fifth portion 351 and a sixth portion 352. The fifth portion 351 is electrically connected to the third electrode 221 of any one of the plurality of second semiconductor elements 22 via a bonding layer 29. When viewed in a direction orthogonal to the first direction z, the fifth portion 351 overlaps with any one of the plurality of protective layers 40. In the semiconductor device A50, the fifth portion 351 is in contact with any one of the plurality of protective layers 40. The sixth portion 352 is located on the side opposite to the plurality of second semiconductor elements 22 with respect to the fifth portion 351. The sixth portion 352 is connected to the fifth portion 351. The sixth portion 352 is electrically connected to the third base 131 of the third terminal 13 via the bonding layer 29. When viewed in a direction orthogonal to the first direction z, the sixth portion 352 protrudes from any one of the plurality of protective layers 40. The dimension of the sixth portion 352 in the first direction z is larger than the dimension of the sixth portion 352 in the direction orthogonal to the first direction z.

[0115] Multiple sixth conducting components 36 are respectively connected to any one of the fourth electrodes 222 of multiple second semiconductor elements 22 and the first terminal 11. For example... Figures 25-27 As shown, a plurality of sixth conductive components 36 are located in the first direction z between a plurality of second semiconductor elements 22 and the first base 111 of the first terminal 11. The plurality of sixth conductive components 36 are housed in the hollow portion 54 of the housing 50. The plurality of sixth conductive components 36 are, for example, metal sheets containing copper. Each of the plurality of sixth conductive components 36 is, for example, cylindrical. One side of each of the plurality of sixth conductive components 36 in the first direction z is electrically connected to the fourth electrode 222 of any one of the plurality of second semiconductor elements 22. The other side of each of the plurality of sixth conductive components 36 in the first direction z is electrically connected to the second mounting surface 111A of the first base 111. Figure 28 and Figure 29As shown, the dimension L4 of the first direction z of each of the plurality of sixth conducting components 36 is greater than the dimension t of the first direction z of each of the plurality of protective layers 40.

[0116] like Figure 28 and Figure 29 As shown, each of the plurality of sixth conductive components 36 has a seventh portion 361 and an eighth portion 362. The seventh portion 361 is electrically connected to the fourth electrode 222 of any one of the plurality of second semiconductor elements 22 via a bonding layer 29. When viewed in a direction orthogonal to the first direction z, the seventh portion 361 overlaps with any one of the plurality of protective layers 40. In the semiconductor device A50, the seventh portion 361 is in contact with any one of the plurality of protective layers 40. The eighth portion 362 is located on the side opposite to the plurality of second semiconductor elements 22 with reference to the seventh portion 361. The eighth portion 362 is connected to the seventh portion 361. The eighth portion 362 is electrically connected to the second mounting surface 111A of the first base 111 of the first terminal 11 via the bonding layer 29. When viewed in a direction orthogonal to the first direction z, the eighth portion 362 protrudes from any one of the plurality of protective layers 40. The dimension of the eighth portion 362 in the first direction z is larger than the dimension of the eighth portion 362 in the direction orthogonal to the first direction z.

[0117] like Figure 24 As shown, the third signal terminal 16 is located on the third direction y side of the third terminal 13. When viewed in the first direction z, the third signal terminal 16 overlaps with the first signal terminal 14. The third signal terminal 16 is supported by the housing 50. The third signal terminal 16 is connected to the second gate electrode 223 of each of the plurality of second semiconductor elements 22. A gate voltage for driving the plurality of second semiconductor elements 22 is applied to the third signal terminal 16. The third signal terminal 16 is, for example, a metal lead containing copper. Figure 24 As shown, the third signal terminal 16 has an inner portion 161 and an outer portion 162. The inner portion 161 is housed within the housing 50. A portion of the inner portion 161 is housed within the hollow portion 54 of the housing 50. The inner portion 161 includes a portion extending in the second direction x. The outer portion 162 is connected to the inner portion 161. Figure 26 As shown, the outer part 162 protrudes outward from the third side 533 of the housing 50.

[0118] Multiple seventh conducting components 37 are respectively connected to any one of the second gate electrodes 223 of the multiple second semiconductor elements 22 and the fourth signal terminal 17. For example... Figure 24 As shown, multiple seventh conductive components 37 extend along a third direction y. The multiple seventh conductive components 37 are housed in the hollow portion 54 of the housing 50. The multiple seventh conductive components 37 are, for example, metal leads containing copper. Figure 29As shown, multiple protective layers 40 respectively cover a portion of each of the multiple seventh conducting components 37. One side of each of the multiple seventh conducting components 37 in the third direction y is electrically connected to the second gate electrode 223 of any of the multiple second semiconductor elements 22 via a bonding layer 29. The other side of each of the multiple seventh conducting components 37 in the first direction z is electrically connected to the interior 161 of the third signal terminal 16.

[0119] like Figure 24 As shown, the fourth signal terminal 17 is located on the same side as the third signal terminal 16 in the third direction y, with the third terminal 13 as a reference. When viewed in the first direction z, the fourth signal terminal 17 overlaps with the second signal terminal 15. The fourth signal terminal 17 is supported on the housing 50. The fourth signal terminal 17 is conductive to the third electrode 221 of each of the plurality of second semiconductor elements 22. A voltage at the same potential as the voltage applied to the third electrode 221 of each of the plurality of second semiconductor elements 22 is applied to the fourth signal terminal 17. The fourth signal terminal 17 is, for example, a metal lead containing copper. Figure 24 As shown, the fourth signal terminal 17 has an interior 171 and an exterior 172. The interior 171 is housed within the housing 50. A portion of the interior 171 is housed within the hollow portion 54 of the housing 50. The interior 171 includes a portion extending in the second direction x. Figure 26 and Figure 27 As shown, the inner 171 is located closer to the top surface 51 of the housing 50 than the inner 161 of the third signal terminal 16. The outer 172 is connected to the inner 171. Figure 27 As shown, the outer part 172 protrudes outward from the third side 533 of the housing 50.

[0120] Multiple eighth conducting components 38 are respectively connected to any one of the third electrodes 221 of multiple second semiconductor elements 22 and the fourth signal terminal 17. For example... Figure 24 As shown, when viewed in the first direction z, multiple eighth conducting components 38 extend along the third direction y, respectively. Figure 27 As shown, a plurality of eighth conductive components 38 respectively span the interior 161 of the third signal terminal 16. The plurality of eighth conductive components 38 are housed in the hollow portion 54 of the housing 50. The plurality of eighth conductive components 38 are, for example, metal leads containing copper. A plurality of protective layers 40 respectively cover a portion of each of the plurality of eighth conductive components 38. One side of each of the plurality of eighth conductive components 38 in the third direction y is electrically connected to the third electrode 221 of any one of the plurality of second semiconductor elements 22. The other side of each of the plurality of eighth conductive components 38 in the first direction z is electrically connected to the interior 171 of the fourth signal terminal 17.

[0121] Next, based on Figure 30 The following describes vehicle B, which is equipped with a semiconductor device A50. Vehicle B is, for example, an electric vehicle (EV).

[0122] like Figure 30 As shown, vehicle B includes an on-board charger 81, a battery 82, and a drive system 83. Power is supplied to the on-board charger 81 wirelessly from an outdoor power supply facility (not shown). Alternatively, the power supply unit from the power supply facility to the on-board charger 81 can be wired. The on-board charger 81 is equipped with a boost-type DC-DC converter. The voltage of the power supplied to the on-board charger 81 is boosted by this converter before supplying power to the battery 82. The boosted voltage is, for example, 600V.

[0123] Drive system 83 drives vehicle B. Drive system 83 includes inverter 831 and drive source 832. Semiconductor device A50 forms part of inverter 831. Power stored in battery 82 supplies power to inverter 831. The power supplied from battery 82 to inverter 831 is direct current (DC). Furthermore, with... Figure 30 Different power systems can be used, such as a boost-type DC-DC converter between the battery 82 and the inverter 831. The inverter 831 converts DC power to AC power. The inverter 831, which includes a semiconductor device A50, is connected to the drive source 832. The drive source 832 has an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates, and this rotation is transmitted to the transmission. The transmission rotates the drive shaft of vehicle B by appropriately reducing the speed transmitted from the AC motor. Thus, vehicle B is driven. When driving vehicle B, it is necessary to freely operate the speed of the AC motor based on information such as the amount of change in the accelerator pedal. Therefore, the semiconductor device A50 in the inverter 831 is needed to correspond to the required speed of the AC motor and to output AC power with an appropriately varying frequency.

[0124] Next, the function and effect of the semiconductor device A50 will be explained.

[0125] Semiconductor device A50 includes a first semiconductor element 21, a first terminal 11, a protective layer 40, and a first conductive member 31. The protective layer 40 covers at least a portion of the first semiconductor element 21 and is located away from the first terminal 11. The first conductive member 31 is located between the first semiconductor element 21 and the first terminal 11 in a first direction z. The first conductive member 31 has a first portion 311 and a second portion 312. When viewed in a direction orthogonal to the first direction z, the first portion 311 overlaps with the protective layer 40. When viewed in a direction orthogonal to the first direction z, the second portion 312 protrudes from the protective layer 40. Therefore, according to this structure, the cooling efficiency can be further improved in semiconductor device A50. Moreover, by having a structure common to semiconductor device A10, semiconductor device A50 achieves the same functional effects as semiconductor device A10.

[0126] This disclosure is not limited to the aforementioned embodiments. The specific structure of each part of this disclosure can be freely modified in various ways.

[0127] This disclosure includes the embodiments described in the following notes.

[0128] Postscript 1.

[0129] A semiconductor device comprising:

[0130] Semiconductor components;

[0131] The first terminal is located on one side of the semiconductor element in a first direction;

[0132] A protective layer covering at least a portion of the semiconductor element and being an insulator; and

[0133] The first conductive component is connected to the semiconductor element and the first terminal.

[0134] The protective layer is located away from the first terminal.

[0135] The first conductive component is located between the semiconductor element and the first terminal in the first direction.

[0136] The first conducting component has:

[0137] The first part overlaps with the protective layer when viewed in a direction orthogonal to the first direction; and

[0138] The second part, which is located on the opposite side of the semiconductor element based on the first part, and is connected to the first part.

[0139] When viewed in a direction orthogonal to the first direction, the second part protrudes from the protective layer.

[0140] Postscript 2.

[0141] According to the semiconductor device described in Appendix 1, wherein,

[0142] The dimension of the first conductive component in the first direction is larger than the dimension of the protective layer in the first direction.

[0143] Postscript 3.

[0144] According to the semiconductor device described in Appendix 2, wherein,

[0145] The semiconductor element has a first electrode opposite to the first terminal.

[0146] The first part is electrically connected to the first electrode.

[0147] The second part is electrically connected to the first terminal.

[0148] Appendix 4.

[0149] According to the semiconductor device described in Appendix 3, wherein...

[0150] The dimension of the second part in the first direction is larger than the dimension of the second part in the direction orthogonal to the first direction.

[0151] Postscript 5.

[0152] The semiconductor device according to Appendix 3 or 4, wherein...

[0153] The first part is in contact with the protective layer.

[0154] Postscript 6.

[0155] According to the semiconductor device described in Appendix 3, wherein...

[0156] It also includes a second terminal, which is located on the opposite side of the first terminal in the first direction, with reference to the semiconductor element.

[0157] The semiconductor element has a second electrode opposite to the second terminal.

[0158] The second electrode is connected to the second terminal.

[0159] Postscript 7.

[0160] According to the semiconductor device described in Appendix 6, wherein...

[0161] It also includes a second conductive component, which is connected to the second electrode and the second terminal.

[0162] The second conductive component is located between the semiconductor element and the second terminal in the first direction.

[0163] The protective layer is located away from the second terminal.

[0164] Postscript 8.

[0165] According to the semiconductor device described in Appendix 7, wherein...

[0166] The second conducting component has:

[0167] The third part overlaps with the protective layer when viewed in a direction orthogonal to the first direction; and

[0168] The fourth part, which is located on the opposite side of the semiconductor element based on the third part, and is connected to the third part,

[0169] The third part is electrically connected to the second electrode.

[0170] The fourth part is electrically connected to the second terminal.

[0171] When viewed in a direction orthogonal to the first direction, the fourth part protrudes from the protective layer.

[0172] Postscript 9.

[0173] According to the semiconductor device described in Appendix 8, wherein...

[0174] The dimension of the fourth part in the first direction is larger than the dimension of the fourth part in the direction orthogonal to the first direction.

[0175] Postscript 10.

[0176] According to the semiconductor device described in Appendix 8, wherein...

[0177] The third part is connected to the protective layer.

[0178] Postscript 11.

[0179] According to the semiconductor device described in Appendix 9, wherein...

[0180] The second part has a first circumferential surface facing a direction orthogonal to the first direction.

[0181] The fourth part has a second circumferential surface facing a direction orthogonal to the first direction.

[0182] The area of ​​the second circumference is larger than the area of ​​the first circumference.

[0183] Postscript 12.

[0184] According to the semiconductor device described in Appendix 6, wherein...

[0185] The second electrode is electrically connected to the second terminal.

[0186] Postscript 13.

[0187] The semiconductor device according to any one of Appendices 6 to 12, wherein,

[0188] It also has signal terminals.

[0189] The semiconductor element has a gate electrode located on the same side as the first electrode in the first direction.

[0190] The signal terminal is connected to the gate electrode.

[0191] Postscript 14.

[0192] According to the semiconductor device described in Appendix 13, wherein...

[0193] It also includes a third conducting component, which is electrically connected to the gate electrode and the signal terminal, respectively.

[0194] A portion of the third conductive component is covered by the protective layer.

[0195] Postscript 15.

[0196] According to the semiconductor device described in Appendix 13, wherein...

[0197] It also includes a housing that supports the first terminal, the second terminal, and the signal terminal.

[0198] The housing is provided with a hollow section.

[0199] The protective layer and the first conductive component are housed in the hollow portion.

[0200] Postscript 16.

[0201] According to the semiconductor device described in Appendix 15, wherein,

[0202] The housing has an inlet and an outlet that communicate with the hollow portion.

[0203] The inlet and the outlet are located on opposite sides of each other in a direction orthogonal to the first direction, with the first conductive component as a reference.

[0204] Postscript 17.

[0205] A vehicle that has:

[0206] Driver source; and

[0207] The semiconductor device described in Appendix 13,

[0208] The semiconductor device is connected to the driving source.

[0209] Symbol Explanation

[0210] A10-A50—Semiconductor device; B—Vehicle; 11—First terminal; 111—First base; 111A—Second mounting surface; 112—First extension; 12—Second terminal; 121—Second base; 121A—First mounting surface; 122—Second extension; 13—Third terminal; 131—Third base; 132—Third extension; 14—First signal terminal; 141—Internal; 142—External; 15—Second signal terminal; 151—Internal; 152—External; 16—Third signal terminal; 161—Internal; 162—External; 17—Fourth signal terminal; 171—Internal; 172—External; 21—First semiconductor element; 211—First electrode; 212—Second electrode; 213—First gate electrode; 22—Second semiconductor element; 221—Third electrode; 222—Fourth electrode; 223—Second gate electrode; 29—Connecting layer; 31—First terminal; 311—First part; 312—Second part; 312A—First circumferential surface; 32—Second conductive component; 321—Third part; 322—Fourth part; 322A—Second circumferential surface; 33—Third conductive component; 34—Fourth conductive component; 35—Fifth conductive component; 351—Fifth part; 352—Sixth part; 36—Sixth conductive component; 361—Seventh part; 362—Eighth part; 37—Seventh conductive component; 38—Eighth part Conducting component; 40—protective layer; 41—first through part; 42—second through part; 50—housing; 51—top surface; 52—bottom surface; 531-534—first side surface-fourth side surface; 54—hollow part; 55—inlet; 56—outlet; 60—refrigerant; 81—on-board charger; 82—battery; 83—drive system; 831—inverter; 832—drive source; z—first direction; x—second direction; y—third direction.

Claims

1. A semiconductor device, characterized by comprising: Possessing: a semiconductor element; a first terminal located on one side in a first direction of the semiconductor element; a protective layer covering at least a portion of the semiconductor element and being an insulator; and a first conduction member conduction with the semiconductor element and the first terminal, the protective layer is distanced from the first terminal, the first conduction member is located between the semiconductor element and the first terminal in the first direction, the first conduction member has: a first portion overlapping the protective layer when viewed in a direction orthogonal to the first direction; and a second portion located on a side opposite to the semiconductor element with the first portion as a reference and connected to the first portion, the second portion protrudes from the protective layer when viewed in the direction orthogonal to the first direction.

2. The semiconductor device according to claim 1, wherein a size of the first conduction member in the first direction is larger than a size of the protective layer in the first direction.

3. The semiconductor device according to claim 2, wherein the semiconductor element has a first electrode facing the first terminal, the first portion is electrically connected to the first electrode, the second portion is electrically connected to the first terminal.

4. The semiconductor device according to claim 3, wherein a size of the second portion in the first direction is larger than a size of the second portion in a direction orthogonal to the first direction.

5. The semiconductor device according to claim 3 or 4, wherein the first portion is in contact with the protective layer.

6. The semiconductor device according to claim 3, further comprising: a second terminal located on a side opposite to the first terminal with the semiconductor element as a reference in the first direction, the semiconductor element has a second electrode facing the second terminal, the second electrode is conduction with the second terminal.

7. The semiconductor device according to claim 6, further comprising: a second conduction member conduction with the second electrode and the second terminal, the second conduction member is located between the semiconductor element and the second terminal in the first direction, the protective layer is distanced from the second terminal.

8. The semiconductor device according to claim 7, wherein the second conduction member has: a third portion overlapping the protective layer when viewed in a direction orthogonal to the first direction; and a fourth portion located on a side opposite to the semiconductor element with the third portion as a reference and connected to the third portion, the third portion is electrically connected to the second electrode, the fourth portion is electrically connected to the second terminal, the fourth portion protrudes from the protective layer when viewed in the direction orthogonal to the first direction.

9. The semiconductor device according to claim 8, wherein a size of the fourth portion in the first direction is larger than a size of the fourth portion in a direction orthogonal to the first direction.

10. The semiconductor device according to claim 8, wherein the third portion is in contact with the protective layer. ​ ​ ​ 11. The semiconductor device according to claim 9, wherein the second portion has a first peripheral surface facing a direction orthogonal to the first direction, the fourth portion has a second peripheral surface facing a direction orthogonal to the first direction, an area of the second peripheral surface is larger than an area of the first peripheral surface.

12. The semiconductor device according to claim 6, wherein the second electrode is conductively joined to the second terminal.

13. The semiconductor device according to any one of claims 6 to 12, further comprising a signal terminal, the semiconductor element has a gate electrode on the same side as the first electrode in the first direction, the signal terminal is in conduction with the gate electrode.

14. The semiconductor device according to claim 13, further comprising a third conduction member electrically connected to the gate electrode and the signal terminal, respectively, a part of the third conduction member is covered with the protective layer.

15. The semiconductor device according to claim 13, further comprising a housing supporting the first terminal, the second terminal, and the signal terminal, respectively, the housing is provided with a hollow portion, the protective layer and the first conduction member are housed in the hollow portion.

16. The semiconductor device according to claim 15, wherein the housing has a flow inlet and a flow outlet communicating with the hollow portion, respectively, the flow inlet and the flow outlet are located on opposite sides with respect to the first conduction member in a direction orthogonal to the first direction. comprising: a drive source; and the semiconductor device according to claim 13, 17. A vehicle characterized by comprising: the semiconductor device is in conduction with the drive source. ​ ​ ​

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