Specific crystal face exposed tetrakaidecahedron cuprous oxide with high specific surface area as well as preparation method and application thereof

Abstract

The invention belongs to the technical field of micro-nano materials, and particularly relates to a specific crystal face exposed tetrakaidecahedron cuprous oxide with a high specific surface area as well as a preparation method and application of the tetrakaidecahedron cuprous oxide. A specific crystal face exposed tetrakaidecahedron cuprous oxide with a high specific surface area is provided, the specific crystal face exposed tetrakaidecahedron cuprous oxide with the high specific surface area has a tetrakaidecahedron structure, the particle size is 0.8-2.0 [mu] m, and the specific crystal face of the tetrakaidecahedron structure is selectively etched to form a porous or hollow structure.

Description

Technical Field

[0001] This invention belongs to the field of micro and nanomaterials technology, and particularly relates to a high specific surface area tetradecahedral cuprous oxide with a specific exposed crystal facet, its preparation method and application. Background Technology

[0002] In recent years, designing and precisely controlling micro / nano crystal structures to leverage their unique properties and applications has become a research hotspot in materials science. Cuprous oxide, a classic p-type semiconductor material, possesses advantages such as a 2.17 eV bandgap, excellent optoelectronic properties, non-toxicity, and low preparation cost, making it promising for applications in catalysts, solar cells, sensors, and magnetic storage. The performance of crystal materials is closely related to their exposed crystal faces; by controlling the morphology and crystal structure, their catalytic activity and sensing performance can be significantly improved. Therefore, precisely controlling the geometry, exposed crystal faces, and specific surface area of ​​Cu₂O crystals is a significant challenge currently facing the field of materials preparation.

[0003] Currently, existing methods for adjusting the geometry of cuprous oxide micro / nano crystals mainly include metal-organic framework template synthesis, acid-base etching, vapor phase etching, and high-temperature thermal decomposition. However, these methods generally have limitations. On the one hand, many methods heavily rely on surfactants or structure-directing agents, which not only increases synthesis costs but may also introduce impurities into the final product, complicating subsequent processing and affecting the actual performance of cuprous oxide. On the other hand, some preparation processes require high temperatures or complex equipment, and it is often difficult to obtain products with uniform morphology and monodisperse distribution. In pursuing high specific surface area, existing technologies usually sacrifice the stability of some crystal faces, making it difficult to accurately retain or expose specific crystal faces.

[0004] Therefore, there is an urgent need in the field for a preparation method that can overcome the shortcomings of existing technologies to obtain cuprous oxide nanoparticles with high specific surface area and specific exposed crystal faces. Existing technologies struggle to achieve the precise synthesis of uniformly morphologically uniform tetrahedral cuprous oxide particles without introducing surfactants or structure-directing agents. In particular, while achieving a high specific surface area, it is difficult to form porous or hollow structures on specific crystal faces of the nanoparticles. Such specific crystal facet structures (e.g., the {100} crystal facet) are crucial for enhancing the activity of materials in catalytic and gas-sensing applications, as highly active crystal faces provide more active sites, which is beneficial for surface adsorption and mass diffusion. The current technological challenge lies in how to prepare cuprous oxide particles with uniform particle size and selectively etched morphologies on specific crystal faces. Summary of the Invention

[0005] The purpose of this invention is to overcome the above-mentioned shortcomings and provide a high specific surface area tetrahedral cuprous oxide with specific exposed crystal faces, its preparation method, and its application.

[0006] Firstly, a high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces is provided using the following technical solution:

[0007] A high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces, wherein the high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces has a tetrahedral structure and a particle size of 0.8 μm-2.0 μm, and the specific crystal faces of the tetrahedral structure are selectively etched to form a porous or hollow structure.

[0008] Furthermore, the specific crystal planes of the tetrahedral structure that are selectively etched are the {100} crystal planes, while the {111} crystal planes are retained.

[0009] Secondly, a method for preparing high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces adopts the following technical solution:

[0010] A method for preparing high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces includes the following steps:

[0011] Step 1: Under preset ultrasonic and stirring conditions, an alkaline solution is added dropwise to a divalent copper salt aqueous solution to react and generate a copper hydroxide precursor.

[0012] Step 2: Add a reducing agent solution to the solution of the copper hydroxide precursor obtained in Step 1, and carry out a reduction reaction at a preset temperature to generate a cuprous oxide suspension.

[0013] Step 3: Add etching solution to the cuprous oxide suspension obtained in Step 2, and carry out selective etching reaction at a preset temperature. After the reaction is completed, separate the solid and liquid, wash and dry to obtain the high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces.

[0014] Furthermore, the molar ratio of the alkaline solution to the aqueous solution of the divalent copper salt is 2.5-6.0:1.

[0015] Furthermore, the reaction temperature in step one is 25℃-30℃, the stirring rate is 200rpm-600rpm, and the ultrasonic power is 10kW-35kW.

[0016] Further, the reducing agent solution is at least one of glucose solution, ferrous sulfate solution or ascorbic acid solution; and the molar ratio of the reducing agent to the copper hydroxide precursor is 0.55-1.50:1.

[0017] Further, the etching solution is at least one of hydrazine hydrate solution, hydrogen peroxide solution, or sodium borohydride solution; and the molar ratio of the etching solution to the copper hydroxide precursor is 2.00-5.00:1.

[0018] Furthermore, the selective etching reaction temperature is 35℃-60℃, and the reaction time is 5min-60min.

[0019] Thirdly, the application of a high specific surface area tetrahedral cuprous oxide with a specific exposed crystal facet employs the following technical solution:

[0020] Application of a high specific surface area tetrahedral cuprous oxide with a specific exposed crystal facet in the preparation of compositions for gas sensing or catalytic degradation.

[0021] Furthermore, the catalytic degradation is the catalytic degradation of 4-nitrophenol in water in the presence of sodium borohydride.

[0022] The beneficial effects of this invention are:

[0023] This invention provides a high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces, exhibiting a uniform tetrahedral structure and a narrow particle size distribution of 0.8 μm-2.0 μm. This ensures good monodispersity and batch stability of the product, laying the foundation for reliable material applications. By selectively etching specific crystal faces ({100} facets), a porous or hollow structure is constructed while preserving the basic tetrahedral framework. This unique structure increases the specific surface area of ​​the particles, providing a significantly larger number of active sites for gas sensing and catalytic reactions compared to solid particles of the same size. Furthermore, the abundant pore structure facilitates rapid mass transfer between reactants and products, thereby significantly improving reaction kinetic efficiency. The high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces provided by this invention solves the problem in existing technologies of balancing morphological uniformity with the construction of high specific surface area structures on specific crystal faces, exhibiting significantly enhanced catalytic activity and sensitivity in applications such as catalytic degradation and gas sensing. Attached Figure Description

[0024] Figure 1 This is a SEM image of a high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces obtained in Example 1 of the present invention.

[0025] Figure 2 This is a SEM image of a high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces obtained in Example 2 of the present invention.

[0026] Figure 3 SEM image of tetradecahedral cuprous oxide prepared for comparison.

[0027] Figure 4This is a catalytic efficiency diagram of high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces obtained in Example 1 of the present invention.

[0028] Figure 5 This is a catalytic efficiency diagram of high specific surface area tetrahedral cuprous oxide with specific exposed crystal faces obtained in Example 2 of the present invention. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of this invention clearer, the present application will be further described in detail below with reference to the accompanying drawings. The described embodiments should not be regarded as limitations on the present invention. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0030] In the following description, references to "some embodiments" refer to a subset of all possible embodiments; however, it is understood that "some embodiments" may be the same or different subsets of all possible embodiments and may be combined with each other without conflict. Unless otherwise defined, all technical and scientific terms used in the embodiments of the invention have the same meaning as commonly understood by one of ordinary skill in the art to which the embodiments of the invention pertain. The terminology used in the embodiments of the invention is for the purpose of describing the embodiments of the invention only and is not intended to limit the invention.

[0031] Those skilled in the art should understand that, in the following description of the embodiments of the present invention, the sequence of numbers does not imply the order of execution. Some or all steps may be executed in parallel or sequentially. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0032] The terminology used in the embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms “a” and “the” as used in the embodiments of this invention and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0033] Those skilled in the art will understand that the numerical ranges in the embodiments of the present invention should be understood to specifically disclose each intermediate value between the upper and lower limits of the range. Each smaller range between any stated value and an intermediate value within the stated range, as well as any other stated value or an intermediate value within the stated range, is also included within the present invention. The upper and lower limits of these smaller ranges may be independently included or excluded from the range.

[0034] Unless otherwise stated, the technical / scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. While only preferred methods and materials are described herein, any methods and materials similar or equivalent to those described herein may be used in embodiments or test cases of the invention. All references to this specification are generally incorporated herein by reference to disclose and describe methods and / or materials associated with said references. In the event of any conflict with any incorporated reference, the contents of this application shall prevail.

[0035] It should be noted that all raw materials and / or reagents in the embodiments of the present invention were purchased from the market or prepared according to conventional methods known to those skilled in the art.

[0036] The instrument information used in this invention is as follows:

[0037] The electronic balance is a ME104E model manufactured by Mettler Toledo Instruments GmbH; the magnetic stirrer is an IKARCT basic model manufactured by (Aika Guangzhou) Instrument Equipment Co., Ltd.; the benchtop high-speed centrifuge is a TG16-WS model manufactured by Hunan Xiangyi Laboratory Instrument Development Co., Ltd.; the vacuum drying oven is a DZK-6250 model manufactured by Shanghai Yiheng Scientific Instruments Co., Ltd.; the scanning electron microscope is a SU8010 model manufactured by HITACHI; and the X-ray powder diffractometer is a D8 ADVANCE model manufactured by Bruker Analytical Instruments GmbH, Germany.

[0038] The reagent information used in this invention is as follows:

[0039] Sodium hydroxide, molecular formula NaOH, reagent purity AR≥95%, manufactured by Tianjin Tianli Chemical Reagent Co., Ltd.; potassium hydroxide, molecular formula KOH, reagent purity AR≥95%, manufactured by Aladdin Biochemical Technology Co., Ltd.; sodium carbonate, molecular formula Na2CO3, reagent purity AR≥95%, manufactured by Xilong Chemical Co., Ltd.; copper sulfate pentahydrate, molecular formula CuSO4·5H2O, reagent purity AR≥99%, manufactured by Aladdin Biochemical Technology Co., Ltd.; copper nitrate trihydrate, molecular formula Cu(NO3)2·3H2O, reagent purity AR≥99%, manufactured by Aladdin Biochemical Technology Co., Ltd.; copper chloride dihydrate, molecular formula CuCl2·2H2O, reagent purity AR≥99%, manufactured by Aladdin Biochemical Technology Co., Ltd.; copper acetate monohydrate, molecular formula Cu(CH3COO)2·H2O, reagent purity AR≥99%, manufactured by Maclean Biochemical Technology Co., Ltd.; glucose, molecular formula C6H12 O6, reagent purity AR≥99.5%, manufacturer: Maclean Biochemical Technology Co., Ltd.; Ferrous sulfate, molecular formula FeSO4·7H2O, reagent purity AR≥98%, manufacturer: Maclean Biochemical Technology Co., Ltd.; Hydrazine hydrate, molecular formula N2H4·H2O, reagent purity AR≥99.5%, manufacturer: Sinopharm Chemical Reagent Co., Ltd.; Ascorbic acid, molecular formula C6H8O6, reagent purity AR≥99%, manufacturer: Xilong Chemical Co., Ltd.; Sodium borohydride, molecular formula NaBH4, reagent purity AR≥98%, manufacturer: Maclean Biochemical Technology Co., Ltd.; Ammonia, molecular formula NH3·H2O, reagent purity AR≥99%, manufacturer: Aladdin Biochemical Technology Co., Ltd.

[0040] Example

[0041] Example 1

[0042] Example 1 provides a method for preparing high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces, specifically including the following steps:

[0043] S1, At room temperature, a mixed solution of NaOH and sodium carbonate is added dropwise to a copper sulfate solution of a certain concentration at a certain rate, and a stable copper hydroxide suspension is obtained by stirring; the molar ratio of the mixed solution to the copper sulfate solution is 3.0:1, the dropping rate of the mixed solution is 12.5 mL / min, the stirring rate is 200 rpm, the ultrasonic power is 15 kW, the reaction temperature is 25 ℃, and the reaction time is 5 min;

[0044] S2, glucose solution is added to the copper hydroxide suspension to carry out a reduction reaction. The stirring rate is 200 rpm, the reaction temperature is 50°C, and the reaction time is 30 min. Then, ascorbic acid solution is added and the reaction continues for another 30 min. The ratio of the amount of reducing agent added to the amount of copper hydroxide precursor solution is 0.60:1, and the ratio of the amount of glucose solution to ascorbic acid solution is 2:1.

[0045] S3, add hydrazine hydrate solution to the suspension, the amount of hydrazine hydrate added is 2.50:1 with the amount of copper hydroxide precursor solution, the stirring speed is 400 rpm, the reaction temperature is 35℃, the reaction time is 60 min, the obtained product is centrifuged, washed and dried, the washing conditions are: repeated centrifugation with ultrapure water, centrifugation speed is 7000 rpm, centrifugation time is 4 min, the conductivity of the washing solution is <15 μS / cm; thus, the high specific surface area tetradecahedral cuprous oxide with exposed specific crystal faces is obtained.

[0046] The high specific surface area tetrahedral cuprous oxide obtained in Example 1 of this invention was subjected to SEM detection, specifically as follows: Figure 1As shown.

[0047] from Figure 1 It can be seen that when the molar ratio of NaOH to copper sulfate is 3.0:1, tetrahedral cuprous oxide can be formed under the reduction of glucose solution and ascorbic acid solution; due to the alkaline reaction environment provided by NaOH, a large amount of OH- - The hydrazine hydrate interacts strongly with the {111} facet of the high-energy state of cuprous oxide to form an ion protective layer, which allows the hydrazine hydrate to be etched first on the {100} facet of cuprous oxide. At the same time, the nitrogen gas formed by the reaction leads to the selective etching of the hydrazine hydrate, thereby forming a tetrahedral cuprous oxide with a high specific surface area, a porous structure, and high {100} exposure.

[0048] Example 2

[0049] Example 2 provides a method for preparing high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces, specifically including the following steps:

[0050] S1. At room temperature, KOH solution is added dropwise to copper sulfate solution of a certain concentration at a certain rate, and a stable copper hydroxide suspension is obtained by stirring. The molar ratio of KOH solution to copper sulfate solution is 3.5:1, the dropping rate of NaOH solution is 8.00 mL / min, the stirring rate is 200 rpm, the reaction temperature is 25℃, the ultrasonic power is 20 kW, and the reaction time is 10 min.

[0051] S2, glucose solution is added to the copper hydroxide suspension to carry out a reduction reaction. The stirring rate is 200 rpm, the reaction temperature is 70°C, and the reaction time is 60 min. The amount of reducing agent added is 1:1 with the amount of copper hydroxide precursor solution.

[0052] S3, add hydrazine hydrate solution to the suspension, the amount of hydrazine hydrate added is 4.00:1 in molar ratio with the copper hydroxide precursor solution, the stirring speed is 400 rpm, the reaction temperature in reaction stage 1 is 35℃, the reaction time is 30 min, then the temperature is raised to 60℃, the reaction time is 30 min, and the obtained product is centrifuged, washed and dried. The washing conditions are: repeated centrifugation with ultrapure water, centrifugation speed is 7000 rpm, centrifugation time is 4 min, and the conductivity of the washing solution is <15 μS / cm; thus, the high specific surface area tetradecahedral cuprous oxide with exposed specific crystal faces is obtained.

[0053] The high specific surface area tetrahedral cuprous oxide obtained in Example 2 of this invention was subjected to SEM detection, specifically as follows: Figure 2 As shown.

[0054] from Figure 2It can be seen that as the reaction temperature increases, the {100} plane with higher energy of Cu2O is gradually etched from the center until a hollow Cu2O structure with only the {111} crystal plane is formed.

[0055] Example 3

[0056] Example 3 provides a method for preparing high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces, specifically including the following steps:

[0057] S1. At room temperature, KOH solution is added dropwise to copper sulfate solution of a certain concentration at a certain rate, and a stable copper hydroxide suspension is obtained by stirring. The molar ratio of KOH solution to copper sulfate solution is 2.5:1, the dropping rate of NaOH solution is 5.00 mL / min, the stirring rate is 400 rpm, the reaction temperature is 25℃, the ultrasonic power is 10 kW, and the reaction time is 20 min.

[0058] S2, glucose solution is added to the copper hydroxide suspension to carry out a reduction reaction. The stirring rate is 400 rpm, the reaction temperature is 50°C, and the reaction time is 50 min. The amount of reducing agent added is 0.55:1 compared with the amount of copper hydroxide precursor solution.

[0059] S3, add hydrazine hydrate solution to the suspension, the amount of hydrazine hydrate added is 2.00:1 with the amount of copper hydroxide precursor solution, the stirring speed is 200 rpm, the reaction temperature of reaction stage 1 is 35℃, the reaction time is 40 min, then the temperature is raised to 60℃, the reaction time is 30 min, and the obtained product is centrifuged, washed and dried. The washing conditions are: repeated centrifugation with ultrapure water, centrifugation speed is 6000 rpm, centrifugation time is 3 min, and the conductivity of the washing solution is <15 μS / cm; thus, the high specific surface area tetradecahedral cuprous oxide with exposed specific crystal faces is obtained.

[0060] Example 4

[0061] Example 4 provides a method for preparing high specific surface area tetrahedral cuprous oxide with exposed specific crystal faces, specifically including the following steps:

[0062] S1. At room temperature, KOH solution is added dropwise to copper sulfate solution of a certain concentration at a certain rate, and the mixture is stirred to obtain a stable copper hydroxide suspension. The molar ratio of KOH solution to copper sulfate solution is 6.0:1, the dropping rate of NaOH solution is 25.00 mL / min, the stirring rate is 600 rpm, the reaction temperature is 30℃, the ultrasonic power is 35 kW, and the reaction time is 30 min.

[0063] S2, glucose solution is added to the copper hydroxide suspension to carry out a reduction reaction, the stirring rate is 600 rpm, the reaction temperature is 60℃, and the reaction time is 30 min; the amount of reducing agent added is 1.50:1 in molar ratio to the amount of copper hydroxide precursor solution.

[0064] S3, add hydrazine hydrate solution to the suspension, the amount of hydrazine hydrate added is 5.00:1 with the amount of copper hydroxide precursor solution, the stirring speed is 600 rpm, the reaction temperature of reaction stage 1 is 35℃, the reaction time is 40 min, then the temperature is raised to 60℃, the reaction time is 30 min, and the resulting product is washed under the following conditions: repeated centrifugation with ultrapure water at a speed of 8000 rpm for a time of 5 min, the conductivity of the washing solution is <15 μS / cm; centrifugation, washing, and drying are performed to obtain the high specific surface area tetradecahedral cuprous oxide with exposed specific crystal faces.

[0065] Comparative Example

[0066] Comparative Example 1

[0067] Comparative Example 1 provides a method for preparing tetradecahedral cuprous oxide, comprising the following steps:

[0068] S1. At room temperature, NaOH solution is added dropwise to copper sulfate solution of a certain concentration at a certain rate, and a stable copper hydroxide suspension is obtained by stirring. The molar ratio of NaOH solution to copper sulfate solution is 3.0:1, the dropping rate of NaOH solution is 12.0 mL / min, the stirring rate is 200 rpm, the reaction temperature is 25℃, and the reaction time is 5 min.

[0069] S2, glucose solution is added to the copper hydroxide suspension at one time to carry out the reduction reaction. The stirring rate is 200 rpm, the reaction temperature is 50℃, and the reaction time is 60 min. The amount of reducing agent added is 1.5:1 with the amount of copper hydroxide precursor solution. Tetrahedral cuprous oxide is obtained.

[0070] The tetrahedral cuprous oxide obtained in Comparative Example 1 was subjected to SEM detection, specifically as follows: Figure 3 As shown.

[0071] from Figure 3 It can be seen that when the glucose concentration is low, the reduction rate of cuprous oxide is slow, and Cu + With a low degree of supersaturation, the crystal growth mode is mainly the {100} plane dislocation growth mode. At this time, the {100} plane growth rate is relatively fast, the exposed {100} plane of cuprous oxide increases, and the crystal morphology tends to be tetrahedral.

[0072] Application examples

[0073] This application example demonstrates the catalytic effect of high specific surface area tetradecahedral cuprous oxide with specific exposed crystal faces prepared in Examples 1 and 2 on 4-nitrophenol. The concentration of the high specific surface area tetradecahedral cuprous oxide with specific exposed crystal faces was 1 g / L, the concentration of 4-nitrophenol was 1 mmol / L, and the concentration of sodium borohydride was 0.5 mol / L.

[0074] Test methods

[0075] 0.1 mL of 4-nitrophenol, 0.1 mL of sodium borohydride, and 1.5 mL of water were pipetted into a cuvette. Then, 20 μL of cuprous oxide was added to the cuvette. Catalytic data at different time points were obtained using UV-Vis spectrophotometry, and the catalytic efficiency was calculated using the following formula: Where K represents the first-order rate constant; A0 represents the absorbance at the initial time; A t t represents the absorbance at a given time; t represents the catalytic time.

[0076] Test results, in detail as follows: Figure 4 and Figure 5 As shown, from Figure 4 It can be seen that, due to the increase in the specific surface area of ​​the tetrahedral cuprous oxide, the catalytic efficiency of 20 μL of p-4-nitrophenol reaches 3.40 × 10⁻⁶. -4 s -1 ;from Figure 5 It can be seen that, thanks to the strong crystal plane selectivity effect during Cu2O etching, the catalytic efficiency of 20 μL cuprous oxide for 4-nitrophenol reaches 6.06 × 10⁻⁶. -4 s -1 It exhibits good catalytic efficiency.

[0077] In summary, the preparation method of this invention is simple and low-cost, requiring no surfactants or structure-directing agents, and yields tetrahedral cuprous oxide with relatively uniform morphology and size, ranging from 0.8 to 2.0 μm. Furthermore, this invention is the first to use hydrazine hydrate as an etchant to prepare tetrahedral cuprous oxide with high specific surface area and exposed specific crystal faces. The specific crystal face exposure and high specific surface area provide ample active sites for adsorption and diffusion on the material surface, thus enabling its widespread application in gas sensors, catalytic degradation, and other fields.

[0078] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A high specific surface area cuprous oxide tetrahedron with specific crystal plane exposure, characterized in that, The high specific surface area tetradecahedral cuprous oxide with exposed specific crystal faces has a tetradecahedral structure, a particle size of 0.8-2.0 μm, and a porous or hollow structure formed by selective etching of specific crystal faces of the tetradecahedral structure.

2. The specific facets exposed high specific surface area cuprous oxide dodecahedron of claim 1, wherein, The specific crystal faces selectively etched are {100} crystal faces, and {111} crystal faces are retained.

3. A method of producing a high specific surface area cuprous oxide of specific facets exposure according to claim 1 or 2, characterized in that, The method comprises the following steps: Step 1: under preset ultrasonic and stirring conditions, a basic solution is added dropwise to an aqueous solution of a divalent copper salt to generate a copper hydroxide precursor; Step 2: a reducing agent solution is added to the solution of the copper hydroxide precursor obtained in Step 1, and a reduction reaction is performed at a preset temperature to generate a cuprous oxide suspension; Step 3: an etching solution is added to the cuprous oxide suspension obtained in Step 2, and a selective etching reaction is performed at a preset temperature; after the reaction, solid-liquid separation, washing and drying are performed to obtain the high specific surface area tetradecahedral cuprous oxide with exposed specific crystal faces.

4. The production method according to claim 3, characterized by, The molar ratio of the basic solution to the aqueous solution of the divalent copper salt is 2.5-6.0:

1.

5. The preparation method according to claim 3, characterized in that, The reaction temperature of Step 1 is 25-30°C, the stirring rate is 200-600 rpm, and the ultrasonic power is 10-35 kW.

6. The preparation method according to claim 3, characterized in that, The reducing agent solution is at least one of a glucose solution, a ferrous sulfate solution or an ascorbic acid solution; and the molar ratio of the reducing agent to the copper hydroxide precursor is 0.55-1.50:

1.

7. The preparation method according to claim 3, characterized in that, The etching solution is at least one of a hydrazine hydrate solution, a hydrogen peroxide solution or a sodium borohydride solution; and the molar ratio of the etching solution to the copper hydroxide precursor is 2.00-5.00:

1.

8. The preparation method according to claim 3, characterized in that, The selective etching reaction temperature is 35-60°C, and the reaction time is 5-60 min.

9. Use of the high specific surface area tetradecahedral cuprous oxide with exposed specific crystal faces according to any one of claims 1-2 in the preparation of a composition for gas sensing or catalytic degradation.

10. Use according to claim 9, characterized in that, The catalytic degradation is catalytic degradation of 4-nitrophenol in water in the presence of sodium borohydride.

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