Photoelectric device and preparation method thereof

Abstract

The invention discloses a photoelectric device and a preparation method thereof, and the preparation method of the photoelectric device comprises the steps: preparing an electron transmission layer, carrying out the plasma processing of the electron transmission layer, and employing a working gas for the plasma processing to generate a passivating agent. According to the invention, plasma treatment is carried out on the electron transport layer by providing the gas capable of reacting to generate the passivating agent, and the flow of the gas is controllable, so that a proper amount of passivating agent can be generated to effectively passivate the defects of the electron transport layer, the electron transport efficiency is improved, and the performance of the photoelectric device is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to an optoelectronic device and its fabrication method. Background Technology

[0002] Electron transport materials are substances with special structures and properties that can effectively improve the transport efficiency of electrons within the material. Ideal electron transport materials possess suitable electron mobility and energy levels. However, after being fabricated into films, they often exhibit certain defects. These defects can lead to exciton quenching and reduce device performance. While existing technologies offer corresponding treatment methods, such as exposing the film to a humid gas atmosphere to allow moisture to adsorb onto its surface, the humidity in this treatment method is significantly affected by factors such as air pressure, temperature, and the volume of the exposure chamber, making precise control difficult. Summary of the Invention

[0003] Based on this, this application provides an optoelectronic device and a method for fabricating the same.

[0004] To address the aforementioned technical problems, this application first provides a method for fabricating an optoelectronic device, employing the technical solution described below:

[0005] A method for fabricating an optoelectronic device includes the following steps:

[0006] Provide the first electrode;

[0007] The electron transport layer is prepared on the first electrode, and the electron transport layer is subjected to plasma treatment.

[0008] A second electrode is fabricated in the electron transport layer after plasma treatment to obtain an optoelectronic device;

[0009] The working gas used in the plasma treatment is used to generate a passivating agent.

[0010] To address the aforementioned technical problems, this application also provides an optoelectronic device, which is prepared using the optoelectronic device preparation method described above.

[0011] Compared with the prior art, the embodiments of this application have the following main advantages:

[0012] This application provides a working gas for generating a passivating agent to perform plasma treatment on the electron transport layer. Since the gas flow rate is controllable, an appropriate amount of passivating agent can be generated to effectively passivate defects in the electron transport layer, improve electron transport efficiency, and thus enhance the performance of optoelectronic devices. Attached Figure Description

[0013] To more clearly illustrate the solution of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a flowchart of a method for fabricating an optoelectronic device according to an embodiment of this application;

[0015] Figure 2 This is a flowchart illustrating the fabrication process of the preform in the method for fabricating the optoelectronic device according to an embodiment of this application.

[0016] Figure 3 This is a schematic diagram of the structure of the optoelectronic device according to an embodiment of this application;

[0017] Figure 4 These are the efficiency characteristic curves of the optoelectronic devices of Embodiments 1-3 and Comparative Example 1 of this application;

[0018] Figure 5 These are the lifetime characteristic curves of the optoelectronic devices of Embodiments 1-3 and Comparative Example 1 of this application;

[0019] Figure label:

[0020] 1. Substrate; 11. Substrate; 12. TFT array; 2. First electrode; 3. Hydrophobic dam layer; 31. Pixel groove; 4. Hole injection layer; 5. Hole transport layer; 6. Light-emitting layer; 7. Electron transport layer; 8. Second electrode. Detailed Implementation

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0022] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0023] See Figure 1 This application provides a method for fabricating an optoelectronic device, comprising the following steps S1 to S3:

[0024] S1 provides the first electrode;

[0025] S2, the electron transport layer is prepared on the first electrode, and the electron transport layer is subjected to plasma treatment;

[0026] S3, a second electrode is fabricated on the electron transport layer after plasma treatment to obtain an optoelectronic device; wherein, the working gas used in the plasma treatment is used to generate a passivating agent.

[0027] In this embodiment, the optoelectronic device is a light-emitting device or other device that performs photoelectric conversion. The following description mainly uses a light-emitting device as an example to illustrate the method.

[0028] Specifically, the electron transport layer is formed by printing electron transport material ink and then performing vacuum drying. The electron transport material of the electron transport layer is selected from one or more of doped or undoped metal oxide nanoparticles, nitrides, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3, while the doped metal oxide particles include ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3. The doped metal oxide particles contain one or more of the following: O2, ZrO2, Ta2O5, HfO3, and Al2O3; the doping elements in the doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Cd, and Cs; the nitride includes Si3N4; the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material includes one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS.

[0029] In some embodiments, the method for fabricating the optoelectronic device further includes the fabrication of a light-emitting layer.

[0030] The light-emitting layer can be prepared before the electron transport layer, i.e., the first electrode is the anode and the second electrode is the cathode. Specifically, the light-emitting layer is first prepared on the first electrode, then the electron transport layer is prepared on the light-emitting layer, and subsequently, the electron transport layer is subjected to plasma treatment; the second electrode is prepared on the plasma-treated electron transport layer to obtain the optoelectronic device.

[0031] Of course, the light-emitting layer can also be prepared after the electron transport layer is prepared. The first electrode can be a cathode and the second electrode can be an anode. Specifically, an electron transport layer is first prepared on the first electrode, and the electron transport layer is subjected to plasma treatment; a light-emitting layer is prepared on the plasma-treated electron transport layer, and a second electrode is prepared on the light-emitting layer to obtain a photoelectric device.

[0032] The following text will mainly describe each step in detail using the scheme in which the light-emitting layer is prepared before the electron transport layer. It should be noted that for the scheme in which the light-emitting layer is prepared before the electron transport layer, the preparation order of each functional layer will be exactly the opposite.

[0033] In a further embodiment, the first electrode is provided in the form of a preform, combined with Figure 2 The method further includes the preparation of preforms, specifically including steps S11 to S12:

[0034] Step S11: Provide a substrate and deposit the first electrode on the substrate; the first electrode is deposited on the substrate by a sputtering process or a vapor deposition process.

[0035] In this embodiment, the first electrode includes one or more of a metal electrode, a carbon material electrode, and a metal oxide electrode. The material of the metal electrode includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The material of the carbon material electrode includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxide electrode includes a metal oxide electrode or a composite electrode in which a metal is disposed between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0036] Step S12: A hydrophobic dam layer is formed on the first electrode. The hydrophobic dam layer includes a plurality of mutually isolated pixel grooves located on the first electrode, such that a portion of the first electrode is exposed outside the hydrophobic dam layer. In this step, a deposition area for functional solution deposition is formed on the inner side of the pixel groove. Since the functional solution in the hydrophobic dam layer is hydrophobic, it can improve the wettability of the material in the deposition area of ​​various functional solutions in subsequent steps, thereby suppressing the phenomenon of functional solution edges climbing on the inner surface of the pixel groove, and thus improving the smoothness of the film surface of each functional layer, which is beneficial to improving device performance.

[0037] In this embodiment, the electron transport layer is prepared in the pixel groove, and then the electron transport layer prepared in the pixel groove is subjected to plasma treatment. Finally, a second electrode is prepared on the electron transport layer.

[0038] In some embodiments, the light-emitting layer is present in the preform. The light-emitting layer is first prepared in the pixel recess, and then an electron transport layer is prepared on the preform containing the first electrode and the light-emitting layer. The electron transport layer is also located in the pixel recess. Specifically, the preparation process of the light-emitting layer in the preform is as follows:

[0039] A functional solution based on a luminescent material is deposited on the first electrode within the pixel groove using a solution method, followed by vacuum drying to form a luminescent layer, thereby obtaining the preform. The luminescent material can be an organic luminescent material or a quantum dot luminescent material, and the corresponding luminescent layer is either an organic luminescent layer or a quantum dot luminescent layer.

[0040] In this embodiment, the material of the quantum dot luminescent layer includes at least one of single-structure quantum dots, core-shell structure quantum dots, and perovskite nanoparticles. The single-structure quantum dot material is selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. Specifically, the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, Cd ... At least one of dZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the IV-VI compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. At least one of the group III-V compounds, wherein the compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAl The quantum dot contains at least one of NAs, InAlNSb, InAlPAs, or InAlPSb, wherein the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2, and AgInS2; the core of the core-shell quantum dot includes any one of the above-mentioned single-structure quantum dots, and the shell material of the core-shell quantum dot includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS, and the above-mentioned single-structure quantum dots; the perovskite nanoparticle material is selected from at least one of the organometal halide semiconductor materials ABX3, wherein A is an organic group, B is a metal element, and X is a halogen element.

[0041] The organic light-emitting layer is made of at least one of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0042] In some embodiments, the preform also includes a hole functional layer, specifically comprising a hole injection layer and a hole transport layer, etc. Fabricating the preform involves fabricating the hole functional layer before fabricating the light-emitting layer in the pixel recess, followed by fabricating the light-emitting layer, and then fabricating an electron transport layer on the preform containing the first electrode, the hole functional layer, and the light-emitting layer. The electron transport layer is also located in the pixel recess. Specifically, in conjunction with... Figure 2 The preparation process of the hole functional layer in the preform includes the following steps S13 and S14:

[0043] Step S13: A functional solution formed according to the hole injection material is disposed on the first electrode in the pixel groove using a solution method, and then vacuum dried to form a hole injection layer; the material of the hole injection layer includes at least one of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzphenanthrene, copper polyester carbonate, MoO3, WO3, and transition metal oxides and transition metal chalcogenides; the transition metal oxide is selected from at least one of NiOx, MoOx, WOx, CrOx, or CuOx, and the transition metal chalcogenide is selected from at least one of MoSx, MoSex, WSx, Wsex, or CuSx.

[0044] Step S14: A functional solution formed according to a hole transport material is applied to the hole injection layer within the pixel groove using a solution method, and then vacuum dried to form a hole transport layer, thereby obtaining the preform. The hole injection layer is selected from at least one of high-conductivity organic molecular materials, transition metal oxides, and transition metal sulfur compounds. The high-conductivity organic molecular material is selected from poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, and 2,3,6,7,10,11-hexacyano-1,4 5,8,9,12-Hexaazabenzanphenanthrene, Polyester copper carbonate, Free phthalocyanine (H2PC), Copper phthalocyanine (CuPc), Platinum phthalocyanine (PtPC), Titanium phthalocyanine (TiOPC), 2,3,6,7,10,11-Hexacyano-1,4,5,8,9,12-Hexaazabenzanphenanthrene (HAT-CN), 7,7,8,8-Tetracyano-p-benzoquinone dimethyl ether (TCNQ), N,N'-Bis[4-(diphenylamino)phenyl]-N,N'-Di-1-naphthyl-biphenyl-4,4'-diamine (NPB-DPA), N,N'-Diphenyl-N,N'-Di(4'-(N,N-di(1-naphthyl)- N,N′-di(phenyl)-N,N′-di(4′-(N,N-di(phenylamino)-4-biphenyl)benzidine (TPT1), N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine (NTNPB), N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine (MeO-TPD), 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(N The transition metal oxide is selected from at least one of N,N-diphenylamino)triphenylamine (NATA), N2,N2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine) (3DMFL-BPA), and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4-TCNQ); the transition metal oxide is selected from at least one of NiO, MoO3, WO3, CuO, and Cu2O; the transition metal chalcogenide compound is selected from at least one of MoS2, MoSe2, WS3, WSe3, and CuS.

[0045] The hole transport layer is made of at least one of organic hole transport materials and inorganic hole transport materials. The organic hole transport materials include poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), poly(9-vinylcarbazole) (PVK), 9,9'-(1,3-phenyl)bis-9H-carbazole (mCP), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), and N,N'-di(naphthyl-2-yl)-N,N' -Di(phenyl)biphenyl-4,4'-diamine (B-NPB), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine (Spiro-NPB), N2,N7-DI-1-naphthyl-N2,N7,9,9-tetraphenyl-9H-fluorene-2,7-diamine (DPFL-NPB), 9,9-di(2-ethylhexyl)-N,N'-di-1-naphthyl-N,N'-diphenyl-9H-fluorene-2,7-diamine (DOFL-NPB), N4,N4'-di(4-vinylphenyl)-N4,N4'-di-1-naphthylbiphenyl-4,4'-diamine (VNPB), 3,6- Bis(9-phenyl-9H-carbazol-3-yl)-9-phenyl-9H-carbazole (Tris-PCz), 9,1-dihydro-9,9-dimethyl-1-(9-phenyl-9H-carbazol-3-yl)-pyridine (PCzAc), N-biphenyl-4-yl-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine (PCbz-PA1), 9,9-dimethyl-N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9H-fluorene-2,7-diamine (DMFL-TPD), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (T PD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine (Spiro-TPD), N,N,N',N'-tetra(2-naphthyl)-1,1'-biphenyl-4,4'-diamine (β-TNB), 2,2',7,7'-tetra(diphenylamino)-9,9'-spirobifluorene (Spiro-TAD), N,N'-bis(9,9-dimethyl-9H-fluorene-2-yl)-N,N'-diphenylbenzidine (BF-DPB), N,N,N',N'-tetraphenylbenzidinediamine (BPBPA), 4,4'-(diphenylmethylene)bis(N,N-diphenylaniline) (TCBPA), 9,9-Di[4-[di(bis(biphenyl-4-yl)amino]phenyl]fluorene (BPAPF), tri(4-biphenyl)amine (TBA), 4,4'-(diphenylsilanediyl)bis(N,N-diphenylaniline) (TSBPA), 4,4'-(9H-fluorene-9-alkylene)bis[N,N-bis(4-methylphenyl)-benzylamine (DTAF), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzylamine Poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4'-di(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene, and C, 60 The inorganic hole transport material includes at least one of the following: doped or undoped NiO, WO3, MoO3, and CuO.

[0046] Subsequently, a functional solution formed according to the luminescent material is placed on the hole transport layer in the pixel groove using a solution method, and then vacuum drying is performed to form a luminescent layer, thereby obtaining the preform.

[0047] It should be noted that the solution method in the above steps includes at least one of the following: sol-gel method, printing, inkjet printing, spin coating, and coating.

[0048] In some embodiments, steps S13 and S14 are optional steps, meaning that either the hole injection layer or the hole transport layer can be set, or neither can be set.

[0049] In step S2, the working gas used for plasma treatment of the electron transport layer is used to generate a passivating agent. Specifically, the working gas reacts to generate a passivating agent that can passivate surface defects in the electron transport layer. In this embodiment, the surface of the electron transport layer of the optoelectronic device is plasma-treated by inputting the working gas into the plasma treatment chamber at a certain flow rate. Since the flow rate of the working gas is controllable, an appropriate amount of passivating agent can be generated to effectively passivate defects in the electron transport layer, improve electron transport efficiency, and thus enhance the performance of the optoelectronic device.

[0050] In one embodiment, the passivating agent generated by the working gas includes water, and correspondingly, the working gas includes an oxygen source gas and a hydrogen source gas; the oxygen source gas and the hydrogen source gas are used to react and generate the passivating agent during the plasma treatment process. Specifically, the oxygen source gas and the hydrogen source gas form plasma during the plasma treatment process, wherein the oxygen plasma and the hydrogen plasma combine through chemical bonds to form water.

[0051] In some embodiments, the oxygen source gas includes at least one of O2, CO, CO2, SO, SO2, SO3, NO, NO2, N2O, N2O3, and N2O4.

[0052] In some embodiments, the hydrogen source gas includes at least one of H2, CH2O, NH3, N2H4, C1-C4 chain alkanes, C3-C4 cyclic alkanes, C2-C4 chain monoolefins, C3-C4 chain dienes, C3-C4 cyclic monoolefins, and C2-C4 chain alkynes.

[0053] Specifically, the C1-C4 chain alkanes can be methane, ethane, propane, or butane;

[0054] The C3-C4 cyclic alkane may specifically be cyclopropane or cyclobutane;

[0055] The C2-C4 chain monoolefin can specifically be ethylene, propylene, or butene;

[0056] The C3-C4 chain diene may specifically be propadiene, 1,2-butadiene, or 1,3-butadiene;

[0057] The C3-C4 cyclic monoolefin can specifically be cyclopropylene or cyclobutene;

[0058] The C2-C4 chain alkynes can specifically be acetylene, propyne, 1-butyne, 2-butyne, and butadiyne.

[0059] In this embodiment, the water content generated by the reaction can be precisely controlled by controlling the flow rate of the working gas. For example, in the reaction equation 2H2 + O2 = 2H2O, by controlling the appropriate flow rates of H2 and O2 and their ratio, the amount of H2O generated by the reaction can be controlled, thereby precisely controlling the water content to treat the surface of the electron transport layer thin film, thus passivating defects in the electron transport layer and improving the performance of optoelectronic devices.

[0060] In some preferred embodiments, during plasma treatment, the flow rate of the oxygen source gas is 10 sccm to 10000 sccm, and the flow rate of the hydrogen source gas is 10 sccm to 10000 sccm; and the volume ratio of the oxygen source gas to the hydrogen source gas is (3.8:1) to (25:1). This range can maintain the oxygen source gas and hydrogen source gas in a safe reaction state during bond breaking and bond formation, which is beneficial for controlling the amount of passivating agent generated.

[0061] In some optional embodiments, the flow rate of the oxygen source gas is any one of 10 sccm, 100 sccm, 200 sccm, 300 sccm, 400 sccm, 500 sccm, 600 sccm, 700 sccm, 800 sccm, 900 sccm, 1000 sccm, 2000 sccm, 3000 sccm, 4000 sccm, 5000 sccm, 6000 sccm, 7000 sccm, 8000 sccm, 9000 sccm, 10000 sccm, or a range between any two of the aforementioned values.

[0062] In some optional embodiments, the flow rate of the hydrogen source gas is any one of 10 sccm, 100 sccm, 200 sccm, 300 sccm, 400 sccm, 500 sccm, 600 sccm, 700 sccm, 800 sccm, 900 sccm, 1000 sccm, 2000 sccm, 3000 sccm, 4000 sccm, 5000 sccm, 6000 sccm, 7000 sccm, 8000 sccm, 9000 sccm, 10000 sccm, or a range between any two of the aforementioned values.

[0063] In some optional embodiments, the volume ratio of the oxygen source gas to the hydrogen source gas is any one of (3.8:1), (4:1), (5:1), (6:1), (7:1), (8:1), (9:1), (10:1), (11:1), (12:1), (13:1), (14:1), (15:1), (16:1), (17:1), (18:1), (19:1), (20:1), (21:1), (22:1), (23:1), (24:1), (25:1), or a range between any two of the aforementioned ratios.

[0064] In this embodiment, the working gas for the plasma treatment also includes an inert gas, which is at least one of N2, Ar, He, and Ne; wherein the flow rate of the inert gas is 1000 sccm to 100000 sccm. The presence of an inert gas can protect the electron transport layer thin film of the optoelectronic device from damage by excessively high-energy plasma. In some optional embodiments, the flow rate of the inert gas is any one of the following values: 1000 sccm, 2000 sccm, 3000 sccm, 4000 sccm, 5000 sccm, 6000 sccm, 7000 sccm, 8000 sccm, 9000 sccm, 10000 sccm, 11000 sccm, 12000 sccm, 13000 sccm, 14000 sccm, 15000 sccm, 16000 sccm, 17000 sccm, 18000 sccm, 19000 sccm, 20000 sccm, 30000 sccm, 40000 sccm, 50000 sccm, 60000 sccm, 70000 sccm, 80000 sccm, 90000 sccm, 100000 sccm, or a range between any two of the aforementioned values.

[0065] In a further embodiment, the inert gas is mixed with the oxygen source gas and the hydrogen source gas in a plasma processing chamber to form a mixed gas. In the plasma processing chamber, the volume fraction of the oxygen source gas relative to the mixed gas is 19% to 25%, the volume fraction of the hydrogen source gas relative to the mixed gas is 1% to 5%, and the volume fraction of the inert gas relative to the mixed gas is 70% to 80%.

[0066] In some alternative embodiments, the volume fraction of the oxygen source gas relative to the mixed gas is any one of 19%, 20%, 21%, 22%, 23%, 24%, 25%, or a range between any two of the aforementioned values.

[0067] In some alternative embodiments, the volume fraction of the hydrogen source gas relative to the mixed gas is any one of 1%, 2%, 3%, 4%, 5%, or a range between any two of the aforementioned values.

[0068] In some alternative embodiments, the volume fraction of the inert gas relative to the mixed gas is any one of 70%, 71%, 72%, 73%, 74%, 75%, 76%, 77%, 78%, 79%, 80%, or a range between any two of the aforementioned values.

[0069] In a further embodiment, the processing gas pressure of the plasma treatment is 0.1 torr to 100 torr; this pressure is conducive to the ionization of the reaction gas (e.g., oxygen source gas, hydrogen source gas). In some optional embodiments, the processing gas pressure of the plasma treatment is any one of 0.1 torr, 10 torr, 20 torr, 30 torr, 40 torr, 50 torr, 60 torr, 70 torr, 80 torr, 90 torr, 100 torr, or a range between any two of the aforementioned values.

[0070] In a further embodiment, the power of the plasma treatment is 500W to 5000W; this power is beneficial for the ionization of the reaction gas. In some optional embodiments, the power of the plasma treatment is any one of 500W, 1000W, 1500W, 2000W, 2500W, 3000W, 3500W, 4000W, 4500W, 5000W, or a range between any two of the aforementioned values.

[0071] In a further embodiment, the plasma treatment time is 100s to 600s; this treatment time is conducive to the effective bonding of the reactant gases to form a passivating agent. In some optional embodiments, the plasma treatment time is any one of 100s, 200s, 300s, 400s, 500s, 600s, or a range between any two of the aforementioned values.

[0072] In a further embodiment, the radio frequency of the plasma treatment is 50 kHz to 13.56 MHz, which is advantageous for the ionization of the reactant gas. In some optional embodiments, the radio frequency of the plasma treatment is any one of the following values, or a range between any two of the aforementioned values: 50 kHz, 100 kHz, 500 kHz, 1 MHz, 1.5 MHz, 2 MHz, 2.5 MHz, 3 MHz, 3.5 MHz, 4 MHz, 4.5 MHz, 5 MHz, 5.5 MHz, 6 MHz, 6.5 MHz, 7 MHz, 7.5 MHz, 8 MHz, 8.5 MHz, 9 MHz, 9.5 MHz, 10 MHz, 11 MHz, 12 MHz, 13 MHz, and 13.56 MHz.

[0073] This embodiment involves plasma treatment of the electron transport layer surface. The working gas for the plasma treatment includes gases that can react to generate water. By controlling the flow rate and proportion of various gases contained in the working gas, the amount of passivating agent generated by the reaction can be precisely controlled, thereby effectively passivating defects in the electron transport layer, improving electron transport efficiency, and enhancing device performance.

[0074] Specifically, in step S3, the device after plasma treatment is transferred to a vacuum evaporation chamber for metal deposition to form the second electrode. In other embodiments, the second electrode can also be formed by metal sputtering. In this embodiment, the second electrode includes one or more of a metal electrode, a carbon material electrode, and a metal oxide electrode. The metal electrode is made of one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The carbon material electrode is made of one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxide electrode is a composite electrode consisting of a metal oxide electrode or a doped or undoped transparent metal oxide with a metal disposed between them. The metal oxide electrode is made of one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO. The composite electrode is made of one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0075] In some embodiments, before fabricating the second electrode, the method further includes fabricating an electron injection layer on the plasma-treated electron transport layer, and then fabricating the second electrode on the electron injection layer. In this embodiment, the material of the electron injection layer includes at least one selected from LiF, NaF, KF, CsF, RbF, LiF / Yb, NaF / Yb, CsF / Yb, CsN3, MgP, MgF2, Al2O3, Ga2O3, Cs2CO3, Rb2CO3, RbBr, and lithium tetrakis(8-hydroxyquinoline)boron (LiBq4).

[0076] This application also provides an optoelectronic device, which is prepared using the optoelectronic device preparation method described above.

[0077] The following is combined with Figure 3 The above-described method for preparing optoelectronic devices describes one structure of the optoelectronic device. Of course, the above-described method can also prepare optoelectronic devices with other structures, which are not limited here.

[0078] Taking the optoelectronic device as a light-emitting device, the first electrode as an anode, and the second electrode as a cathode as an example, the optoelectronic device includes a substrate 1, a first electrode 2, a hydrophobic dam layer 3, a hole injection layer 4, a hole transport layer 5, a light-emitting layer 6, an electron transport layer 7, and a second electrode 8.

[0079] Specifically, the substrate 1 includes a substrate 11 and a TFT array 12. The substrate 11 can be a rigid glass substrate or a flexible substrate, such as a substrate made of PET or PI material. A first electrode 2 is disposed on the substrate 1, and the first electrode 2 is connected to the drain of the substrate 1. A hydrophobic dam layer 3 is disposed on the first electrode 2. The hydrophobic dam layer 3 includes a plurality of isolated pixel recesses 31. The pixel recesses 31 are located on the first electrode 2, such that a portion of the first electrode 2 is exposed outside the hydrophobic dam layer 3. A hole injection layer 4, a hole transport layer 5, a light-emitting layer 6, and an electron transport layer 7 are sequentially formed within the pixel recesses 31. The second electrode 8 completely covers the hydrophobic dam layer 3 and the electron transport layer 7.

[0080] In some embodiments, the first electrode 2 and the second electrode 8 are each selected from one or more of a metal electrode, a carbon material electrode, and a metal oxide electrode. The material of the metal electrode includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The material of the carbon material electrode includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxide electrode includes a metal oxide electrode or a composite electrode in which a metal is disposed between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0081] In one embodiment, when the optoelectronic device has a bottom-emission structure, the first electrode 2 is a transparent electrode, which can be selected from at least one of conductive carbon materials, doped or undoped metal oxides; specifically, the conductive carbon material includes at least one of doped or undoped carbon nanotubes, doped or undoped graphene, doped or undoped graphene oxide, C60, graphite, carbon fiber, and porous carbon. The material of the doped or undoped metal oxide electrode includes at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO. Correspondingly, the second electrode 8 can be selected from a metal electrode, and the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg.

[0082] In one embodiment, when the optoelectronic device is a top-emitting structure, the first electrode 2 is a metal material with a reflectivity ≥90%, such as nickel, chromium, or platinum; it can also be a composite thin film structure, such as metal / ITO, metal / IZO, ITO / metal / ITO, ITO / metal / IZO, IZO / metal / IZO, or IZO / metal / ITO; the metal is a metal with high reflectivity (reflectivity ≥90%), such as silver, aluminum, chromium, or nickel. Specifically, preferably, the first electrode 2 is at least one of AZO / Ag / AZO, ITO / Ag / ITO, IZO / Ag / IZO, WO3 / Ag / WO3, MoO3 / Ag / MoO3, or ITO / Ag:Pd:Cu / ITO composite structure electrode. Accordingly, the second electrode 8 is a transparent electrode, which can be selected from at least one of transparent metal oxides, graphene, carbon nanotubes, extremely thin metals or metal alloys, and is preferably Al, Ag, Mg, magnesium-silver alloy (Ag:Mg), or magnesium-aluminum alloy (Al:Mg).

[0083] In some embodiments, the hydrophobic dam layer 3 material is selected from at least one of polyimide, polysiloxane, polymethyl methacrylate, polybutyl methacrylate, polycyclohexyl methacrylate, and polystyrene.

[0084] In some embodiments, the hole injection layer 4 is selected from at least one of high-conductivity organic molecular materials, transition metal oxides, and transition metal sulfide compounds; the high-conductivity organic molecular material is selected from poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethylethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, copper polyester carbonate, free phthalocyanine (H2PC), copper phthalocyanine (CuPc), and platinum phthalocyanine (P). tPC), titanyl phthalocyanine (TiOPC), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzenephenanthrene (HAT-CN), 7,7,8,8-tetracyano-p-benzodiquinone dimethane (TCNQ), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine (NPB-DPA), N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-benzidine (Di-NPB), N,N′-di(phenyl) -N,N′-Di(4′-(N,N-di(phenylamino)-4-biphenyl)benzidine (TPT1), N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine (NTNPB), N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine (MeO-TPD), 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(N,N-diphenylamino)triphenylamine (NAT) A) at least one of N2,N2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine)(3DMFL-BPA) and 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4-TCNQ); the transition metal oxide is selected from at least one of NiO, MoO3, WO3, CuO, and Cu2O; the transition metal chalcogenide compound is selected from at least one of MoS2, MoSe2, WS3, WSe3, and CuS.

[0085] In one embodiment, the hole transport layer 5 is selected as an organic hole transport material having a deep HOMO energy level and a high hole mobility; the organic hole transport material includes poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), poly(9-vinylcarbazole) (PVK), 9,9'-(1,3-phenyl)di-9H-carbazole (mCP), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), N N'-Di(naphthyl-2-yl)-N,N'-Di(phenyl)biphenyl-4,4'-diamine (B-NPB), N2,N7-Di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine (Spiro-NPB), N2,N7-DI-1-naphthyl-N2,N7,9,9-tetraphenyl-9H-fluorene-2,7-diamine (DPFL-NPB), 9,9-Di(2-ethylhexyl)-N,N'-Di-1-naphthyl-N,N'-diphenyl-9H-fluorene-2,7-diamine (DOFL-NPB), N4,N4'-Di(4-vinylphenyl)-N4,N4'-di-1-naphthylbiphenyl-4,4'-diamine (VNPB), 3,6-bis(9-phenyl-9H-carbazol-3-yl)-9-phenyl-9H-carbazole (Tris-PCz), 9,1-dihydro-9,9-dimethyl-1-(9-phenyl-9H-carbazol-3-yl)-pyridine (PCzAc), N-biphenyl-4-yl-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine (PCbz-PA1), 9,9-dimethyl-N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9H-fluorene-2,7-diamine (DMFL-TPD), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4' -Diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine (Spiro-TPD), N,N,N',N'-tetra(2-naphthyl)-1,1'-biphenyl-4,4'-diamine (β-TNB), 2,2',7,7'-tetra(diphenylamino)-9,9'-spirobifluorene (Spiro-TAD), N,N'-bis(9,9-dimethyl-9H-fluorene-2-yl)-N,N'-diphenylbenzidine (BF-DPB), N,N,N',N'-tetraphenylbenzidinediamine (BPBPA), 4,4'-(diphenylmethylene)bis(N,N-diphenylaniline) (TCBPA), 9,9-Di[4-[di(bis(biphenyl-4-yl)amino]phenyl]fluorene (BPAPF), tri(4-biphenyl)amine (TBA), 4,4'-(diphenylsilanediyl)bis(N,N-diphenylaniline) (TSBPA), 4,4'-(9H-fluorene-9-alkylene)bis[N,N-bis(4-methylphenyl)-benzylamine (DTAF), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzylamine Poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4'-di(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene, and C, 60 At least one of them.

[0086] In addition, the material of the hole transport layer can also be an inorganic hole transport material, which includes at least one of doped or undoped NiO, WO3, MoO3 and CuO.

[0087] In some embodiments, the light-emitting layer 6 is a quantum dot light-emitting layer or an organic light-emitting layer; the material of the quantum dot light-emitting layer includes at least one of single-structure quantum dots, core-shell structure quantum dots, and perovskite nanoparticles. The material of the single-structure quantum dots is selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. Specifically, the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, and HgS. At least one of the following groups: SnS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the group IV-VI compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPb S, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, wherein the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb. At least one of GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb, wherein the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2, and AgInS2; the core of the core-shell quantum dot includes any one of the above-mentioned single-structure quantum dots, and the shell material of the core-shell quantum dot includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS, and the above-mentioned single-structure quantum dots;The organic light-emitting layer is made of at least one of the following materials: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives; the perovskite nanoparticle material is selected from at least one of the organometal halide semiconductor materials ABX3, wherein A is an organic group, B is a metal element, and X is a halogen element.

[0088] In some embodiments, the material of the electron transport layer 7 is selected from one or more of doped or undoped metal oxide nanoparticles, nitrides, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials; wherein, the undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3, and the metal oxides in the doped metal oxide particles include ZnO, TiO2, SnO2, ZrO2, Ta2O5, and HfO3. One or more of O3 and Al2O3, wherein the doping element in the doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Cd, and Cs, wherein the nitride includes Si3N4, wherein the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS, wherein the IIIA-VA group semiconductor material includes one or more of InP and GaP, and wherein the IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS.

[0089] The optoelectronic device in this embodiment is prepared using the above-described preparation method. Defects in the formed electron transport layer 7 are passivated, resulting in high electron transport efficiency.

[0090] This application also provides a display device, including an optoelectronic device prepared by the method described above, or an optoelectronic device prepared by the method described above.

[0091] In this embodiment, the display device includes at least one optoelectronic device. When preparing the electron transport layer of the optoelectronic device on the display device, a passivating agent is generated using a gas with controllable flow rate, which can effectively passivate defects in the electron transport layer, resulting in high electron transport efficiency and improved performance of the display device.

[0092] The technical solution of the present invention will be further described in detail below with reference to specific embodiments of quantum dot electroluminescent devices.

[0093] Example 1

[0094] Provides an anode ITO array substrate containing a hydrophobic dam layer (polyimide);

[0095] A hole injection layer is formed by printing PEDOT:PSS ink on the substrate, and then subjected to high vacuum for 10 seconds. -6 The solvent was removed by Pa treatment for 10 minutes.

[0096] Repeat the printing (printing different functional layer materials) with 10 -6 During the Pa high-vacuum drying process, a hole transport layer TFB, a quantum dot light-emitting layer CdSe, and an electron transport layer ZnO are sequentially formed on the substrate.

[0097] The printed substrate was transferred to a plasma processing chamber, and oxygen source gas O2 with a flow rate of 2000 sccm, hydrogen source gas CH4 with a flow rate of 100 sccm, and inert gas N2 with a flow rate of 7000 sccm were introduced. Plasma ignition was performed using a 13.56 MHz radio frequency power supply, and the electron transport layer ZnO surface was plasma treated for 100 s at a power of 1000 W.

[0098] The substrate after plasma treatment is transferred to a vacuum evaporation chamber for Ag evaporation to form a cathode;

[0099] The vapor-deposited device is then packaged to obtain a bottom-emission quantum dot electroluminescent device.

[0100] Example 2

[0101] Provides an anode ITO array substrate containing a hydrophobic dam layer (polyimide);

[0102] A hole injection layer is formed by printing PEDOT:PSS ink on the substrate, and then subjected to high vacuum for 10 seconds. -6 The solvent was removed by Pa treatment for 10 minutes.

[0103] Repeat the printing (printing different functional layer materials) with 10 -6 During the Pa high-vacuum drying process, a hole transport layer TFB, a quantum dot light-emitting layer CdSe, and an electron transport layer ZnO are sequentially formed on the substrate.

[0104] The printed substrate was transferred to a plasma processing chamber, and oxygen source gas N2O with a flow rate of 4000 sccm, hydrogen source gas NH3 with a flow rate of 200 sccm, and inert gas N2 with a flow rate of 15000 sccm were introduced. Plasma ignition was performed using a 13.56 MHz radio frequency power supply, and the electron transport layer ZnO surface was plasma treated for 100 s at a power of 1000 W.

[0105] The substrate after plasma treatment is transferred to a vacuum evaporation chamber for Ag evaporation to form a cathode;

[0106] The vapor-deposited device is then packaged to obtain a bottom-emission quantum dot electroluminescent device.

[0107] Example 3

[0108] Provides an anode ITO array substrate containing a hydrophobic dam layer (polyimide);

[0109] A hole injection layer is formed by printing PEDOT:PSS ink on the substrate, and then subjected to high vacuum for 10 seconds. -6 The solvent was removed by Pa treatment for 10 minutes.

[0110] Repeat the printing (printing different functional layer materials) with 10 -6 During the Pa high-vacuum drying process, a hole transport layer TFB, a quantum dot light-emitting layer CdSe, and an electron transport layer ZnO are sequentially formed on the substrate.

[0111] The printed substrate was transferred to a plasma processing chamber, and oxygen source gas O2 with a flow rate of 2000 sccm, hydrogen source gas C2H4 with a flow rate of 100 sccm, and inert gas N2 with a flow rate of 7000 sccm were introduced. Plasma ignition was performed using a 13.56 MHz radio frequency power supply, and the electron transport layer ZnO surface was plasma treated for 100 s at a power of 1000 W.

[0112] The substrate after plasma treatment is transferred to a vacuum evaporation chamber for Ag evaporation to form a cathode;

[0113] The vapor-deposited device is then packaged to obtain a bottom-emission quantum dot electroluminescent device.

[0114] Comparative Example 1

[0115] Provides an anode ITO array substrate containing a hydrophobic dam layer (polyimide);

[0116] A hole injection layer is formed by printing PEDOT:PSS ink on the substrate, and then subjected to high vacuum for 10 seconds. -6 The solvent was removed by Pa treatment for 10 minutes.

[0117] Repeat the printing (printing different functional layer materials) with 10 -6 During the Pa high-vacuum drying process, a hole transport layer TFB, a quantum dot light-emitting layer CdSe, and an electron transport layer ZnO are sequentially formed on the substrate.

[0118] The printed substrate is then transferred to a vacuum evaporation chamber for Ag evaporation to form a cathode;

[0119] The vapor-deposited device is then packaged to obtain a bottom-emission quantum dot electroluminescent device.

[0120] The photoelectric performance of the quantum dot electroluminescent devices described in Examples 1-3 and Comparative Example 1 was tested, and the device performance is shown in Table 1. Figure 3 , Figure 4 As shown.

[0121] Table 1

[0122] EQE (%) Lifespan LT95(h) Example 1 20.2 2.0 Example 2 20.2 2.2 Example 3 19.6 1.8 Comparative Example 1 5.9 0.4

[0123] In the table, EQE represents device efficiency, and LT95 represents device lifetime.

[0124] As can be seen from the table and figures, compared with Comparative Example 1, in Examples 1 to 3, after the electron transport layer of the quantum dot electroluminescent device is treated with plasma, the efficiency and lifespan of the quantum dot electroluminescent device are greatly improved.

[0125] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A method of fabricating an optoelectronic device, characterized by, The method comprises the following steps: providing a first electrode; preparing an electron transport layer on the first electrode, and performing plasma treatment on the electron transport layer; preparing a second electrode on the plasma-treated electron transport layer to obtain a photoelectric device; wherein the working gas used in the plasma treatment is used to generate a passivation agent.

2. The method of fabricating an optoelectronic device according to claim 1, wherein, The passivation agent comprises water, and the working gas comprises an oxygen source gas and a hydrogen source gas; the oxygen source gas and the hydrogen source gas are used to react to generate the passivation agent during the plasma treatment.

3. The method of fabricating an optoelectronic device according to claim 2, wherein, The oxygen source gas comprises at least one of O2, CO, CO2, SO, SO2, SO3, NO, NO2, N2O, N2O3, N2O4; and / or, The hydrogen source gas comprises at least one of H2, CH2O, NH3, N2H4, C1-C4 linear alkane, C3-C4 cyclic alkane, C2-C4 linear monoalkene, C3-C4 linear diene, C3-C4-cyclic monoalkene, C2-C4 linear alkyne.

4. The method of producing an optoelectronic device according to claim 2 or 3, characterized in that, During the plasma treatment, the flow rate of the oxygen source gas is 10-10000sccm, and the flow rate of the hydrogen source gas is 10-10000sccm; and / or, The volume ratio of the oxygen source gas to the hydrogen source gas is (3.8:1)-(25:1).

5. A method of fabricating an optoelectronic device according to any one of claims 2 to 4, wherein, The working gas of the plasma treatment further comprises an inert gas, and the inert gas comprises at least one of N2, Ar, He, Ne; wherein the flow rate of the inert gas is 1000-100000sccm; and / or The inert gas, the oxygen source gas, and the hydrogen source gas form a mixed gas, the volume fraction of the oxygen source gas in the mixed gas is 19-25%, the volume fraction of the hydrogen source gas in the mixed gas is 1-5%, and the volume fraction of the inert gas in the mixed gas is 70-80%.

6. The method of producing an optoelectronic device according to any one of claims 1 to 5, characterized in that, The processing gas pressure of the plasma treatment is 0.1-100torr; and / or The power of the plasma treatment is 500-5000W; and / or The time of the plasma treatment is 100-600s; and / or The radio frequency of the plasma treatment is 50kHz-13.56MHz.

7. The method of producing an optoelectronic device according to any one of claims 1 to 5, wherein The material of the electron transport layer is selected from one or more of doped or non-doped metal oxide nanoparticle material, nitride, IIB-VIA semiconductor material, IIIA-VA semiconductor material and IB-IIIA-VIA semiconductor material, the material of the non-doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, HfO3, the metal oxide in the doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, HfO3, Al2O3, the doping element in the doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Cd, Cs, the nitride includes Si3N4, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA semiconductor material includes one or more of InP, GaP, and the IB-IIIA-VIA semiconductor material includes one or more of CuInS, CuGaS.

8. The method of producing an optoelectronic device according to any one of claims 1 to 5, characterized in that, The method comprises the following steps: providing a first electrode; preparing an electron transport layer on the first electrode, and performing plasma treatment on the electron transport layer; preparing a light emitting layer on the plasma-treated electron transport layer, and preparing a second electrode on the light emitting layer to obtain an optoelectronic device; or, providing a first electrode; preparing a light emitting layer on the first electrode; preparing an electron transport layer on the light emitting layer, and performing plasma treatment on the electron transport layer; preparing a second electrode on the plasma-treated electron transport layer to obtain an optoelectronic device.

9. The method of producing an optoelectronic device according to claim 8, wherein The first electrode and the second electrode respectively independently include one or more of a metal electrode, a carbon material electrode and a metal oxide electrode, the material of the metal electrode includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg, the material of the carbon material electrode includes one or more of graphite, carbon nanotube, graphene and carbon fiber, and the metal oxide electrode includes a metal oxide electrode or a composite electrode provided with a metal between a doped or non-doped transparent metal oxide, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3 and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; And / or, the light-emitting layer is a quantum dot light-emitting layer or an organic light-emitting layer; the material of the quantum dot light-emitting layer includes at least one of a single-structure quantum dot, a core-shell structure quantum dot, and a perovskite nanoparticle material, the material of the single-structure quantum dot is selected from at least one of a II-VI compound, a IV-VI compound, a III-V compound, and a I-III-VI compound, wherein the II-VI compound is selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, the IV-VI compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, the III-V compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb, and the I-III-VI compound is selected from at least one of CuInS2, CuInSe2, and AgInS2; the core of the core-shell structure quantum dot includes any one of the above-mentioned single-structure quantum dots, and the shell material of the core-shell structure quantum dot includes CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS, and at least one of the above-mentioned single-structure quantum dots.The material of the organic light-emitting layer includes at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine-C2,N) iridium(III), 4,4',4"-tris(carbazole-9-yl) triphenylamine: tris[2-(p-tolyl)pyridine-C2,N) iridium, diaryl anthracene derivative, stilbene aromatic derivative, pyrene derivative, fluorene derivative, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material and DBP fluorescent material, polyacetylene and its derivative, poly-p-phenylene and its derivative, polythiophene and its derivative, polyfluorene and its derivative; the perovskite nanoparticle material is selected from at least one of organic metal halide semiconductor material ABX3, wherein A is an organic group, B is a metal element, and X is a halogen element; and / or, The first electrode and the light-emitting layer or the second electrode and the light-emitting layer are further provided with a hole injection layer and / or a hole transport layer, wherein the hole injection layer is close to the first electrode or the second electrode, and the hole injection layer is selected from at least one of high-conductivity organic molecular materials, transition metal oxides, and transition metal sulfur compounds; the high-conductivity organic molecular materials are selected from at least one of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polymeric copper carbonate, free phthalocyanine (H2PC), copper phthalocyanine (CuPc), platinum phthalocyanine (PtPC), titanium phthalocyanine (TiOPC), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), 7,7,8,8-tetracyano-p-quinodimethane (TCNQ), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-di-1-naphthyl-biphenyl-4,4'-diamine (NPB-DPA), N,N'-diphenyl-N,N'-di(4'-(N,N-di(1-naphthyl)-amino)-4-biphenyl)-benzidine (Di-NPB), N,N'-diphenyl-N,N'-di-[4-(N,N-di-p-tolylamino)phenyl]benzidine (NTNPB), N4,N4,N4',N4'-tetra(4-methoxyphenyl)-[1,1'-biphenyl]-4,4'-diamine (MeO-TPD), 4,4',4"-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4'4"-tris(N,N-diphenylamino)triphenylamine (NATA), N2,N2'-(9,9-dimethyl-9H-fluorene-2,7-diyl)bis(9,9-dimethyl-N2,N7,N7-triphenyl-9H-fluorene-2,7-diamine) (3DMFL-BPA), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4-TCNQ); the transition metal oxides are selected from at least one of NiO, MoO3, WO3, CuO, Cu2O; the transition metal sulfur compounds are selected from at least one of MoS2, MoSe2, WS3, WSe3, CuS; the material of the hole transport layer includes at least one of organic hole transport materials and inorganic hole transport materials, and the organic hole transport materials include poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), poly(9-vinylcarbazole) (PVK), 9,9'-(1,3-phenyl)di-9H-carbazole (mCP), 4,4',4"-tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-cyclohexylbis[N,N-di(4- methylphenyl)benzenamine] (TAPC), N,N'-diphenyl-N,N'-(1 -naphthyl)-1,1 '- biphenyl-4,4'-diamine (NPB), N,N'-di(naphthalen-2-yl)-N,N'-diphenylbiphenyl-4,4'- diamine (B-NPB), N2,N7-di-1 -naphthyl-N2,N7-diphenyl-9,9'-spirobis[9H-fluorene]-2,7- diamine (Spiro-NPB), N2,N7-DI-1 -naphthyl-N2,N7,9,9-tetraphenyl-9H-fluorene-2,7- diamine (DPFL-NPB), 9,9-di(2-ethylhexyl)-N,N'-di-1 -naphthyl-N,N'-diphenyl-9H-fluorene- 2,7-diamine (DOFL-NPB), N4,N4'-di(4-vinylphenyl)-N4,N4'-di-1 -naphthylbiphenyl-4,4'- diamine (VNPB), 3,6-bis(9-phenyl-9H-carbazol-3-yl)-9-phenyl-9H-carbazole (Tris- PCz), 9,1 -dihydro-9,9-dimethyl-1 -(9-phenyl-9H-carbazol-3-yl)-imidazole (PCzAc), N- biphenyl-4-yl-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluoren-2-amine (PCbz-PA1 ), 9,9-dimethyl-N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9H-fluorene-2,7- diamine (DMFL-TPD), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1 '-biphenyl-4,4'- diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobi[fluorene]-2,7-diamine (Spiro-TPD), N,N,N',N'-tetrakis(2-naphthyl)-1,1 '-biphenyl-4,4'-diamine (β-TNB), 2,2',7,7'- tetrakis(diphenylamino)-9,9'-spirobifluorene (Spiro-TAD), N,N'-bis(9,9-dimethyl-9H-fluoren-2- yl)-N,N'-diphenylbenzidine (BF-DPB), N,N,N',N'-tetrakisbiphenylylphenylenediamine (BPBPA), 4,4'-(diphenylmethylenyl)bis(N,N-diphenylbenzenamine) (TCBPA), 9,9-bis[4-[di(bisbiphenyl-4-yl)amino]phenyl]fluorene (BPAPF), tris(4-biphenylyl)amine (TBA), 4,4'-(diphenylsilanediyl)bis(N,N-diphenylbenzenamine) (TSBPA), 4,4'-(9H-fluoren-9-ylidene)bis[N,N-bis(4-methylphenyl)-benzenamine] (DTAF), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzenamine, poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4'-bis(9-carbazol) biphenyl, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1 '-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1 -naphthyl)-1,1 '-biphenyl-4,4'-diamine, doped graphene, undoped graphene, and C, 60 at least one of the inorganic hole transport materials comprises at least one of doped or undoped NiO, WO3, M0O3, and CuO; And / or, an electron injection layer is further arranged between the electron transport layer and the second electrode or between the electron transport layer and the first electrode, and a material of the electron injection layer comprises at least one of LiF, NaF, KF, CsF, RbF, LiF / Yb, NaF / Yb, CsF / Yb, CsN3, MgP, MgF2, Al2O3, Ga2O3, Cs2CO3, Rb2CO3, RbBr, lithium tetrakis(8-hydroxyquinoline) borate (LiBq4).

10. An optoelectronic device, characterized in that The optoelectronic device is prepared by using the preparation method of the optoelectronic device according to any one of claims 1 to 9.

Images