Continuous fluid in-situ monitoring device and method

Abstract

The application relates to the technical field of in-situ sensing, and discloses a continuous fluid in-situ monitoring device and method. The continuous fluid in-situ monitoring device comprises a fluid channel for defining a flow path of a continuous fluid in a first direction; a triboelectric component comprising a first semiconductor, a second semiconductor and two electrodes, the second semiconductor being different from the first semiconductor in type and being arranged in the first direction at intervals, and part of the second semiconductor and part of the first semiconductor being exposed to the fluid channel; the two electrodes are arranged at intervals in the first direction, and in a second direction perpendicular to the first direction, one of the two electrodes is arranged on a side of the second semiconductor away from the fluid channel, and the other electrode is arranged on a side of the first semiconductor away from the fluid channel. The continuous fluid in-situ monitoring device can effectively monitor the flow vector of the continuous fluid.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of in-situ sensing, and in particular to a continuous fluid in-situ monitoring device and method. BACKGROUND

[0002] Flow monitoring technology is an indispensable key technology to ensure the safety, efficiency and economy of fluid delivery systems, and to realize fine monitoring and intelligent upgrading. It is widely used in fields ranging from large urban pipe networks to precision biochips. As the core tool of flow monitoring technology, flow sensors play an important role in the safety of pipe network systems. According to the monitoring principle, traditional flow sensors are mainly divided into four categories: electromagnetic, ultrasonic, turbine and differential pressure. Although these traditional flow sensor technologies have been widely used, they face challenges in realizing in-situ monitoring and exhibit high integration complexity. Therefore, developing an in-situ fluid monitoring technology is a future trend, and the urgent task is to propose an integrated in-situ real-time flow vector monitoring method.

[0003] In 2012, Wang Zhonglin's team invented a triboelectric nanogenerator (TENG) based on the coupling of triboelectricity and electrostatic induction. As a new high-entropy energy technology, it has shown great application potential in the fields of sensing and energy harvesting. Liquid can also be considered as a triboelectric material. A solid-liquid triboelectric nanogenerator (SL-TENG) based on the liquid-solid interface can not only harvest energy from the liquid, but also achieve liquid sensing by analyzing the generated electrical signals. However, due to the need for a contact-separation process between the liquid and the insulator, it is difficult to achieve effective electrical signal output under the action of continuous fluid. In 2019, Wang Zhonglin et al. proposed the concept of "tribovolt effect", which refers to the phenomenon of generating direct current (DC) signals through mechanical friction between a metal or semiconductor and another semiconductor. In recent years, many researchers have proven that the continuous friction of liquid droplets on a semiconductor interface can generate electrical signals, which can characterize the velocity parameters of the liquid droplets. However, combining sensing technology based on the tribovolt effect with continuous water flow monitoring is still an area that has not been thoroughly researched. SUMMARY

[0004] The present application discloses a continuous fluid in-situ monitoring device and method, which can effectively monitor the flow vector of continuous fluid.

[0005] To achieve the above-mentioned purpose, the present application provides the following technical solutions:

[0006] In a first aspect, the present application provides a continuous fluid in-situ monitoring device, comprising:

[0007] a fluid channel for defining a flow path of the continuous fluid in a first direction;

[0008] The triboelectric component comprises a first semiconductor, a second semiconductor and two electrodes, the second semiconductor is different from the first semiconductor in type and is arranged in the first direction, and part of the second semiconductor and part of the first semiconductor are exposed to the fluid channel; the two electrodes are arranged in the first direction, and one of the two electrodes is arranged on the side of the second semiconductor away from the fluid channel, and the other electrode is arranged on the side of the first semiconductor away from the fluid channel.

[0009] It should be noted that the continuous fluid in-situ monitoring device provided in the application combines the independent layer mode with the fluid channel, and further combines the flow monitoring of the continuous fluid with the micro-integration of the pipeline to monitor the parameter characteristics of the fluid such as water. The continuous fluid in-situ monitoring device is configured to expose the two different types of semiconductors, i.e., the first semiconductor and the second semiconductor, to the fluid channel, so that the continuous fluid can generate an electric current when flowing through the two semiconductors in sequence. The electric signal formed by the electric current is proportional to the flow of the continuous fluid and has the characteristics of responding to the flow direction. Specifically, the size and direction of the electric current change with the flow vector of the continuous fluid.

[0010] Accordingly, the continuous fluid in-situ monitoring device provided in the application can realize the flow vector monitoring of the continuous fluid.

[0011] In some embodiments, the first semiconductor and the second semiconductor are both in a sheet shape; in the second direction, the second semiconductor and the first semiconductor are located on the same side of the fluid channel;

[0012] The continuous fluid in-situ monitoring device further comprises a pipeline assembly, and the pipeline assembly comprises a first flow channel plate and a second flow channel plate; in the second direction, the first flow channel plate is located on the side of the second flow channel plate away from the electrodes and is fixed with the second flow channel plate, wherein:

[0013] The first flow channel plate is provided with a flow cavity, and the flow cavity forms the fluid channel; the flow cavity is provided with a first opening on the side facing the second flow channel plate;

[0014] The second flow channel plate is provided with two through grooves arranged in the first direction, the first semiconductor is arranged in one of the through grooves, and the second semiconductor is arranged in the other through groove, and the second semiconductor and the first semiconductor are both exposed to the flow cavity through the first opening.

[0015] In some embodiments, along the second direction, the thickness of the second flow channel plate is the same as the thickness of the second semiconductor and the first semiconductor, and the side surface of the first semiconductor facing the first flow channel plate is flush with the side surface of the second flow channel plate facing the first flow channel plate, and the side surface of the second semiconductor facing the first flow channel plate is flush with the side surface of the second flow channel plate facing the first flow channel plate.

[0016] In some embodiments, along the second direction, the flow cavity is further provided with a second opening on the side away from the second flow channel plate; the pipeline assembly further comprises a shell, the shell enclosing the second opening, and the shell being provided with a liquid inlet and a liquid outlet communicating with the flow cavity; along the first direction, the liquid inlet and the liquid outlet are arranged at intervals, and the second semiconductor and the first semiconductor are located between the liquid inlet and the liquid outlet.

[0017] In some embodiments, the continuous fluid in-situ monitoring device further comprises a substrate fixed relative to the pipeline assembly, the substrate being provided with two mounting grooves arranged at intervals along the first direction; the electrodes are fixed in the corresponding mounting grooves.

[0018] In some embodiments, the second semiconductor and the first semiconductor are both annular structures or semi-annular structures, and the fluid channel penetrates through the annular structures or semi-annular structures.

[0019] Among the two electrodes, one electrode is arranged on the side of the corresponding second semiconductor away from the fluid channel; the other electrode is arranged on the side of the corresponding first semiconductor away from the fluid channel.

[0020] In some embodiments, the electrode corresponding to the second semiconductor is an annular structure or a semi-annular structure.

[0021] And / or, the electrode corresponding to the first semiconductor is an annular structure or a semi-annular structure.

[0022] In some embodiments, the continuous fluid in-situ monitoring device further comprises a pipeline piece, the inner wall of the pipeline piece being provided with two grooves; the first semiconductor and the corresponding electrode are embedded in one of the grooves, and the second semiconductor and the corresponding electrode are embedded in the other groove; the pipeline piece forms the fluid channel.

[0023] In some embodiments, the inner surface of the first semiconductor is flush with the inner wall surface of the pipeline piece.

[0024] And / or, the inner surface of the second semiconductor is flush with the inner wall surface of the pipeline piece.

[0025] In some embodiments, an analysis module is further included, which is electrically connected with the electrodes, for acquiring and analyzing the electrical signals generated by the triboelectric component, judging the fluid state.

[0026] In a second aspect, the application further provides a continuous fluid in-situ monitoring method. The continuous fluid in-situ monitoring method is applied to the continuous fluid in-situ monitoring device provided in any of the technical solutions of the first aspect, and includes:

[0027] The continuous fluid is controlled to flow through one of the first semiconductor and the second semiconductor in the first direction in the fluid channel, and then flow through the other one;

[0028] The electrical signals output by the electrodes are acquired and analyzed, the fluid state is judged, and a result signal is formed.

[0029] It should be noted that the continuous fluid in-situ monitoring method provided by the application combines the flow monitoring of the continuous fluid with the micro-integration of the pipeline to monitor the parameter characteristics of the fluid such as water. When the continuous fluid flows in the fluid channel, the continuous fluid will flow through the two semiconductors in turn and generate an electric current by rubbing against the two semiconductors. The electrical signals formed by the electric current are proportional to the flow of the continuous fluid, and have the characteristics of responding to the flow direction. Specifically, the size and direction of the electric current change with the flow vector of the continuous fluid.

[0030] In some embodiments, the method further includes:

[0031] A safety threshold is set, and it is judged whether the result signal exceeds the safety threshold. If the result signal exceeds the safety threshold, an alarm is triggered. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 A structural schematic diagram of the continuous fluid in-situ monitoring device provided by the embodiment of the application is shown in FIG. 1;

[0033] Figure 2 A structural schematic diagram of the continuous fluid in-situ monitoring device provided by the embodiment of the application is shown in FIG. 1; Figure 1 An exploded schematic diagram of the structure is shown in FIG. 2;

[0034] Figure 3 A principle schematic diagram of the continuous fluid in-situ monitoring device provided by the embodiment of the application is shown in FIG. 3; Figure 1 An exploded schematic diagram of the structure is shown in FIG. 2;

[0035] Figure 4 A principle schematic diagram of the continuous fluid in-situ monitoring device provided by the embodiment of the application is shown in FIG. 3; Figure 1 A principle schematic diagram of the continuous fluid in-situ monitoring device provided by the embodiment of the application is shown in FIG. 3;

[0036] Figure 5 A principle schematic diagram of the continuous fluid in-situ monitoring device provided by the embodiment of the application is shown in FIG. 3;

[0037] Figure 6 A principle schematic diagram of the continuous fluid in-situ monitoring device provided by the embodiment of the application is shown in FIG. 3; Figure 5 An exploded schematic diagram of the structure is shown in FIG. 2;

[0038] Figure 7 A flow chart of a continuous fluid in-situ monitoring method provided by the embodiment of the present application is shown in the figure.

[0039] Fig. 1 is a structural diagram of a triboelectric assembly according to an embodiment of the present application. Fig. 2 is a structural diagram of a pipeline assembly according to an embodiment of the present application. Fig. 3 is a structural diagram of a substrate according to an embodiment of the present application. Fig. 4 is a structural diagram of a pipeline according to an embodiment of the present application. DETAILED DESCRIPTION

[0040] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application. In the description of the embodiments of the present application, unless otherwise specified, " / " represents the meaning of or, for example, A / B can represent A or B; the "and / or" in the text only describes the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which means that there are three cases of A alone, A and B together, and B alone. In addition, in the description of the embodiments of the present application, "multiple" means two or more than two.

[0041] Hereinafter, the terms "first" and "second" are only used for description purposes, and cannot be understood as implying or suggesting relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with "first" and "second" can explicitly or implicitly include one or more of the features, and in the description of the embodiments of the present application, unless otherwise specified, the meaning of "multiple" is two or more than two.

[0042] The embodiment of the present application provides a continuous fluid in-situ monitoring device. Figure 1 A structural diagram of a continuous fluid in-situ monitoring device provided by the embodiment of the present application is shown in the figure. Figure 2 For Figure 1 The exploded schematic diagram of the structure. As Figure 1 And Figure 2As shown, the continuous fluid in-situ monitoring device includes a fluid channel and a triboelectric component 100. The fluid channel defines the flow path of the continuous fluid in a first direction. The triboelectric component 100 includes a first semiconductor 110, a second semiconductor 120, and two electrodes 130, wherein the parameters of the first semiconductor 110, the second semiconductor 120, and the electrodes 130 are not limited. The second semiconductor 120 is of a different type from the first semiconductor 110 and is spaced apart along the first direction, with portions of the second semiconductor 120 and the first semiconductor 110 exposed to the fluid channel. The two electrodes 130 are spaced apart along the first direction and, along a second direction perpendicular to the first direction, one electrode 130 is located on the side of the second semiconductor 120 facing away from the fluid channel, and the other electrode 130 is located on the side of the first semiconductor 110 facing away from the fluid channel. It should be understood that the continuous fluid in-situ monitoring device provided in this embodiment is used to monitor a continuous fluid, not a droplet-like fluid.

[0043] When a continuous fluid flows within a fluid channel, it flows sequentially along a first direction through one of the first semiconductor 110 and the second semiconductor 120, and then through the other of the first semiconductor 110 and the second semiconductor 120, generating triboelectricity in the process. This triboelectric generation between the continuous fluid and the semiconductors is based on a competition mechanism between the built-in electric field and the interface electric field at the liquid-semiconductor interface.

[0044] For example, such as Figure 2 As shown, the first semiconductor 110 can be a P-type semiconductor, and the second semiconductor 120 can be an N-type semiconductor. It should be understood that the first semiconductor 110 can also be an N-type semiconductor, and the second semiconductor 120 can be a P-type semiconductor; further details will not be elaborated here. Figure 3 for Figure 1 A schematic diagram of the principle of a continuous fluid in-situ monitoring device. Please refer to... Figure 2 refer to Figure 3 The content shown illustrates that when a continuous fluid flows in the forward direction (e.g.) Figure 3 In direction a), the continuous fluid first flows through the first semiconductor 110 and then through the second semiconductor 120. The built-in electric field (Eb) in both the first semiconductor 110 and the second semiconductor 120 is greater than the interface electric field (Ei) and plays a dominant role. Specifically, the built-in electric field in the first semiconductor 110, as indicated by the solid arrow pointing downwards, can drive charge carriers to move from the first semiconductor 110 to the second semiconductor 120, generating direct current. Subsequently, when the continuous fluid flows through the second semiconductor 120, the built-in electric field in the second semiconductor 120, being greater than the interface electric field, moves upwards along the solid arrow, driving charge carriers to move from the second semiconductor 120 to the first semiconductor 110, generating direct current. Accordingly, the electrical signal generated by the direct current within the circuit formed by the second semiconductor 120 and the first semiconductor 110 can be extracted through electrode 130.

[0045] Figure 4 for Figure 1 Another schematic diagram of the principle of a continuous fluid in-situ monitoring device. Please refer to... Figure 2 refer to Figure 3 The content shown illustrates how continuous fluid flows in reverse (e.g., when the fluid flows in the opposite direction). Figure 4 In the direction of flow b), the continuous fluid first flows through the second semiconductor 120 and then through the first semiconductor 110. The interface electric field between the second semiconductor 120 and the first semiconductor 110 is greater than the built-in electric field and plays a dominant role. Specifically, the interface electric field in the second semiconductor 120, along the dashed arrow pointing downwards, can drive charge carriers to move from the second semiconductor 120 to the first semiconductor 110, generating direct current. The interface electric field in the first semiconductor 110, along the dashed arrow pointing upwards, can drive charge carriers to move from the first semiconductor 110 to the second semiconductor 120, generating direct current. Accordingly, when the continuous fluid flows in the opposite direction, the electrical signal generated by the direct current in the circuit formed by the second semiconductor 120 and the first semiconductor 110 can be extracted through electrode 130.

[0046] It is worth noting that, Figure 4 The direct current in the circuit formed by the second semiconductor 120 and the first semiconductor 110 is Figure 3 The direct current generated when a continuous fluid flows in the forward direction is in the opposite direction. Therefore, different electrical signals are generated when the direction of the continuous fluid changes. Furthermore, the flow rate of the continuous fluid is related to the current value; the general trend is that the larger the flow rate, the larger the current value, which is also reflected in the electrical signal. In summary, the electrical signal is related to the flow direction and flow rate of the continuous fluid.

[0047] It should be noted that the continuous fluid in-situ monitoring device provided in this application combines an independent layer mode with a fluid channel, thereby combining the monitoring of continuous fluid flow rate with the micro-integration of the pipeline to monitor the parameter characteristics of fluids such as water. Specifically, the continuous fluid in-situ monitoring device exposes two different types of semiconductor portions, a first semiconductor 110 and a second semiconductor 120, within the fluid channel. This allows the continuous fluid to generate current through friction with each semiconductor as it flows sequentially. The electrical signal generated by this current is proportional to the flow rate of the continuous fluid and exhibits a response to the flow direction; specifically, the magnitude and direction of the current change with the flow vector of the continuous fluid.

[0048] Accordingly, the continuous fluid in-situ monitoring device provided in this application embodiment can realize the monitoring of the flow vector of continuous fluid.

[0049] In the application of the continuous fluid in-situ monitoring device provided in the embodiments of the present application, the continuous fluid in-situ monitoring device can be applied to any application environment that needs to monitor the flow vector of continuous fluid, such as the biological medical diagnosis field, the pipeline transportation monitoring field, and the like.

[0050] In the specific setting of the continuous fluid in-situ monitoring device provided in the embodiments of the present application, the structural form of the continuous fluid in-situ monitoring device has multiple possibilities, which can be one of the following structural forms.

[0051] In one embodiment, as shown in Figure 1 and Figure 2 , the first semiconductor 110 and the second semiconductor 120 are both in the form of a sheet; along the second direction, the second semiconductor 120 and the first semiconductor 110 are located on the same side of the fluid channel. As shown in Figure 1 and Figure 2 , the continuous fluid in-situ monitoring device further comprises a pipeline assembly 200, and the pipeline assembly 200 comprises a first flow channel plate 210 and a second flow channel plate 220; along the second direction, the first flow channel plate 210 is located on the side of the second flow channel plate 220 away from the electrode 130 and is fixed with the second flow channel plate 220, wherein: the first flow channel plate 210 is provided with a flow cavity 211, and the flow cavity 211 forms a fluid channel; the flow cavity 211 has a first opening on the side facing the second flow channel plate 220; the second flow channel plate 220 is provided with two through slots 221 arranged at intervals along the first direction, the first semiconductor 110 is arranged in one of the through slots 221, and the second semiconductor 120 is arranged in the other of the through slots 221, and the second semiconductor 120 and the first semiconductor 110 are both exposed in the flow cavity 211 through the first opening.

[0052] Wherein, the first flow channel plate 210 and the second flow channel plate 220 can be formed by laser cutting or stamping process. In the assembly of the continuous fluid in-situ monitoring device in the embodiment, two electrodes 130 can be fixed on the corresponding first semiconductor 110 and second semiconductor 120, such as fixing the electrodes 130 on the first semiconductor 110 and the second semiconductor 120 by adhesion or the like; then, the first semiconductor 110 and the second semiconductor 120 can be arranged in the corresponding through slots 221. The first semiconductor 110 and the corresponding through slot 221 can be interference fit to prevent the first semiconductor 110 from falling out, thereby improving the stability of the device; similarly, the second semiconductor 120 and the corresponding through slot 221 can be interference fit to prevent the second semiconductor 120 from falling out, thereby improving the stability of the device.

[0053] Then, the first flow channel plate 210 can be adhered to the side of the second flow channel plate 220 away from the electrode 130 in the second direction, so that part of the second semiconductor 120 and part of the first semiconductor 110 are exposed in the flow cavity 211 through the first opening.

[0054] In the embodiment, when the continuous fluid flows in the fluid channel, the continuous fluid flows through one of the sheet-shaped second semiconductor 120 and the first semiconductor 110 in the first direction in turn, and then flows through the other one, and generates electricity by friction in the process. The electricity generated by the friction between the continuous fluid and the semiconductor is based on the competition mechanism of the built-in electric field in the liquid-semiconductor interface and the interface electric field.

[0055] In one embodiment, along the second direction, the thickness of the second flow channel plate 220 is the same as the thickness of the second semiconductor 120 and the first semiconductor 110.

[0056] In a specific embodiment, as shown in Figure 2 After assembly, the first semiconductor 110 is completely placed in the through groove 221. Specifically, along the second direction, the side surface of the first semiconductor 110 facing the electrode 130 is flush with the side surface of the second flow channel plate 220 facing the electrode 130, and the side of the first semiconductor 110 away from the electrode 130 is flush with the side surface of the second flow channel plate 220 away from the electrode 130.

[0057] And / or, after assembly, the second semiconductor 120 is completely placed in the through groove 221. Specifically, along the second direction, the side surface of the second semiconductor 120 facing the electrode 130 is flush with the side surface of the second flow channel plate 220 facing the electrode 130, and the side of the second semiconductor 120 away from the electrode 130 is flush with the side surface of the second flow channel plate 220 away from the electrode 130.

[0058] It should be noted that, by designing at least one of the first semiconductor 110 and the second semiconductor 120 to be flush with the double side surfaces of the second flow channel plate 220 along the second direction, the embodiment can ensure that the semiconductor is closely attached to the electrode 130 to optimize the charge transmission path and reduce the contact resistance, and also make the side of the semiconductor away from the electrode 130 form a flat interface with the surface of the first flow channel plate 210, that is, form a flat fluid channel, avoid local vortex or resistance when the fluid flows, and improve the uniformity of the contact between the fluid and the semiconductor surface and the friction efficiency, so that the continuous fluid in-situ monitoring device can more accurately monitor the continuous fluid.

[0059] In one embodiment, as shown in Figure 2As shown, along the second direction, the flow cavity 211 is also provided with a second opening on the side away from the second flow channel plate 220; the pipeline assembly 200 further comprises a shell 230, the shell 230 seals the second opening, and the shell 230 is provided with a liquid inlet 231 and a liquid outlet 232 which communicate with the flow cavity 211. Along the first direction, the liquid inlet 231 and the liquid outlet 232 are arranged at intervals, and the second semiconductor 120 and the first semiconductor 110 are located between the liquid inlet 231 and the liquid outlet 232. Wherein, the shell 230 is used for sealing the second opening, and even the first flow channel plate 210 can be covered and sealed to prevent potential water leakage, thereby improving the monitoring accuracy of the continuous fluid in-situ monitoring device.

[0060] In one embodiment, as shown in the drawings, Figure 2 The second flow channel plate 220 is substantially a strip structure along the first direction, and only has an extension region along the third direction at the position where the through groove 221 is arranged. The third direction is perpendicular to the first direction and the second direction. The first flow channel plate 210 is substantially a strip structure, and only has an extension region at the positions corresponding to the liquid inlet 231 and the liquid outlet 232, and the flow cavity 211 of the first flow channel plate 210 is substantially linear.

[0061] In one embodiment, as shown in the drawings, Figure 2 The continuous fluid in-situ monitoring device further comprises a substrate 300, the substrate 300 is fixed relative to the pipeline assembly 200, and the substrate 300 is provided with two mounting grooves 310 arranged at intervals along the first direction. Wherein, the mounting groove 310 can be the through groove 221, so as to facilitate the electrical connection between the electrode 130 and the external analysis module. The electrode 130 is fixed in the corresponding mounting groove 310, which can realize the accurate positioning and stable assembly of the electrode 130, avoid displacement and looseness of the electrode 130 during fluid flow or equipment operation, ensure stable electrical contact between the electrode 130 and the semiconductor, and reduce the influence of contact resistance fluctuation on power generation efficiency.

[0062] As shown in the drawings, Figure 2 The shape of the substrate 300 can be substantially the same as that of the second flow channel plate 220. For example, the size of the substrate 300 can be increased at the positions corresponding to the semiconductors, and the mounting groove 310 is arranged at the positions corresponding to the semiconductors. Wherein, the center line of the mounting groove 310 can coincide with the center line of the through groove 221.

[0063] It is worth noting that in the present embodiment, the shell 230 and the substrate 300 can also be cut by laser or stamped by stamping process, and the specific process will not be described herein. Moreover, the structural members in the continuous fluid in-situ monitoring device can be bonded with epoxy resin or other materials, and the specific design should be made according to the actual requirements.

[0064] In another embodiment, Figure 5 Another structural schematic diagram of the continuous fluid in-situ monitoring device provided by the present embodiment is shown in the drawings; Figure 6For Figure 5 schematic diagram of the explosion of the middle structure. As Figure 5 and Figure 6 shown, the second semiconductor 120 and the first semiconductor 110 are both annular structures or semi-annular structures, and the fluid channel penetrates through the annular structure or semi-annular structure. It should be understood that the semi-annular structure is not limited to half of the annular structure, and can be understood as a part of the annular structure. Among the two electrodes 130, one electrode 130 is arranged on the side of the corresponding second semiconductor 120 away from the fluid channel, and the other electrode 130 is arranged on the side of the corresponding first semiconductor 110 away from the fluid channel.

[0065] In this embodiment, when the continuous fluid flows in the fluid channel, the continuous fluid sequentially flows through one of the second semiconductor 120 and the first semiconductor 110 of the annular structure or semi-annular structure, and then flows through the other of the second semiconductor 120 and the first semiconductor 110, and generates electricity by friction in the process. Among them, the electricity generated by the friction between the continuous fluid and the semiconductor is based on the competition mechanism of the built-in electric field and the interface electric field in the liquid-semiconductor interface.

[0066] It is worth noting that in this embodiment, the fluid channel penetrates through the annular or semi-annular semiconductor, and the structure is arranged so that the continuous fluid forms a full-range, surrounding contact with the inner wall of the semiconductor when the continuous fluid flows in the fluid channel, which can increase the friction contact area and improve the monitoring performance of the continuous fluid in-situ monitoring device.

[0067] In one embodiment, as Figure 6 shown, the electrode 130 corresponding to the second semiconductor 120 is an annular structure or a semi-annular structure; and / or, the electrode 130 corresponding to the first semiconductor 110 is an annular structure or a semi-annular structure. This structure can precisely match the annular or semi-annular semiconductor structure, realize full-range, conformal contact between the electrode 130 and the side of the semiconductor away from the fluid channel, increase the electrical contact area of the two, shorten the charge transmission path, reduce the contact resistance, improve the charge collection and transmission efficiency, and thus enhance the power generation output performance.

[0068] In one embodiment, as Figure 5 and Figure 6 shown, the continuous fluid in-situ monitoring device further comprises a pipe piece 400. It should be understood that in order to show the internal structure of the pipe piece 400, Figure 5 and Figure 6 the pipe piece 400 is partially cut away. As Figure 5 and Figure 6 shown, the inner wall of the pipe piece 400 is provided with two grooves 410, the first semiconductor 110 and the corresponding electrode 130 are embedded in one groove 410, and the second semiconductor 120 and the corresponding electrode 130 are embedded in the other groove 410; the pipe piece 400 forms a fluid channel.

[0069] This structure allows for the integrated and compact layout of core functional components, optimizes the utilization of device space, avoids installation interference or damage caused by exposed components, and the groove 410 can provide a stable limit for the electrode 130 and the semiconductor, effectively resisting the risk of displacement and loosening caused by fluid flow impact, and ensuring stable electrical contact between the electrode 130 and the semiconductor.

[0070] Moreover, the embedded structure completely isolates the electrode 130 from the continuous fluid, which can prevent the performance degradation of the electrode 130 caused by fluid corrosion and contamination, and extend the service life of the equipment.

[0071] It should be understood that the first semiconductor 110, the second semiconductor 120, and the electrode 130 all need to be assembled inside the conduit 400. To facilitate assembly, the conduit 400 can be configured to include two sub-conduits, and the cross-sections of the two sub-conduits can be joined to form the circular cross-section of the conduit 400. Specifically, after the first semiconductor 110, the second semiconductor 120, and the electrode 130 have all been assembled with the two sub-conduits, the two sub-conduits can be combined into a complete conduit 400 through processes such as welding.

[0072] Alternatively, when the first semiconductor 110, the second semiconductor 120, and the electrode 130 are all non-annular structures, they can be configured as elastic elements capable of recovering deformation. During assembly, the elastic elements are bent to fit inside the bent pipe component 400; details will not be elaborated further.

[0073] It is worth noting that, such as Figure 6 As shown, taking the groove 410 corresponding to the first semiconductor 110 as an example, the groove 410 includes a first part for accommodating the first semiconductor 110 and a second part for accommodating the electrode 130, wherein the second part is connected to the first part to facilitate the assembly of the electrode 130 and the first semiconductor.

[0074] In one embodiment, such as Figure 5 As shown, the inner surface of the first semiconductor 110 is flush with the inner wall surface of the pipe component 400; and / or, the inner surface of the second semiconductor 120 is flush with the inner wall surface of the pipe component 400. This structure, where the semiconductor and the inner wall surface of the pipe component 400 are flush, can form a smooth and flat inner wall of the fluid channel, completely avoiding problems such as increased fluid flow resistance and local eddies caused by protrusions or depressions on the inner surface of the semiconductor, ensuring stable and smooth fluid flow along the channel, thereby improving the uniformity of contact between the fluid and the semiconductor surface and optimizing the triboelectric efficiency.

[0075] In one embodiment, the continuous fluid in-situ monitoring device provided in this application further includes an analysis module. This analysis module is electrically connected to the electrode 130 and is used to acquire and analyze the electrical signals generated by the triboelectric component 100 to determine the fluid state, such as the direction and flow rate of the continuous fluid. In specific configurations, this analysis module can be formed by combining multiple devices or by a single device. For example, the analysis module includes a microcontroller and a computer. The microcontroller and other electronic devices acquire the electrical signals generated by the triboelectric current for integration; the computer is electrically connected to the microcontroller for analyzing and processing the electrical signals.

[0076] It is worth noting that the computer contains a pre-designed signal processing system that analyzes electrical signals to determine the fluid state. This signal processing system may include a Python program that processes the electrical signals to obtain the relationship between the electrical signals and the direction and flow rate of the continuous fluid, thereby enabling in-situ real-time monitoring of the pipe flow vector.

[0077] This application also provides a method for continuous fluid in-situ monitoring. This method is applied to the continuous fluid in-situ monitoring device provided by any of the above technical solutions. Figure 7 This is a flowchart illustrating the continuous fluid in-situ monitoring method provided in the embodiments of this application. Please refer to it. Figure 1 and Figure 2 refer to Figure 7 The continuous fluid in-situ monitoring method shown includes:

[0078] Step S702: Control the continuous fluid to flow sequentially through one of the first semiconductor 110 and the second semiconductor 120 in the fluid channel along the first direction, and then flow through the other;

[0079] Step S704: Acquire and analyze the electrical signal output from electrode 130, determine the fluid state, and generate a result signal.

[0080] It should be noted that the continuous fluid in-situ monitoring method provided in this application combines continuous fluid flow monitoring with the micro-integration of pipelines to monitor the parameter characteristics of fluids such as water. When the continuous fluid flows within the fluid channel, it sequentially passes through two semiconductors, generating current through friction with each semiconductor. The electrical signal generated by this current is proportional to the flow rate of the continuous fluid and exhibits a response to the flow direction; specifically, the magnitude and direction of the current change with the flow vector of the continuous fluid.

[0081] As an example, when the continuous fluid flows, a corresponding electrical signal is generated, and the signal is processed by the continuous fluid in-situ monitoring device. The electrical signal is collected by using a device such as a single-chip microcomputer, and the collected electrical signal is transmitted to a computer. By using a designed linear relationship conversion and signal feature recognition, the flow size is obtained, and the fluid flow direction is determined according to the amplitude of the result signal.

[0082] In one embodiment, the continuous fluid in-situ monitoring method provided by the embodiments of the present application further includes setting a safety threshold, judging whether the result signal exceeds the safety threshold, and triggering an alarm if the result signal exceeds the safety threshold. The continuous fluid in-situ monitoring method can improve the safety performance of the overall device.

[0083] Specifically, according to the working conditions, multiple safety thresholds (such as a flow overload threshold and a reverse flow threshold) can be set, and then the flow size and the flow direction are displayed in real time in the computer in-situ flow vector monitoring system interface. When the flow exceeds the safety threshold overload or the fluid reverses, the monitoring system can automatically alarm.

[0084] Obviously, those skilled in the art can make various modifications and variations to the embodiments of the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application belong to the scope of the claims of the present application and the equivalent technology thereof, the present application also intends to include these modifications and variations.

Claims

1. A continuous fluid in-situ monitoring device, characterized in that, include: A fluid channel is used to define the flow path of a continuous fluid in a first direction; A triboelectric component includes a first semiconductor, a second semiconductor, and two electrodes, wherein the second semiconductor is of a different type from the first semiconductor and is spaced apart along the first direction, and a portion of the second semiconductor and a portion of the first semiconductor are exposed to the fluid channel; The two electrodes are spaced apart in the first direction. In a second direction perpendicular to the first direction, one of the two electrodes is located on the side of the second semiconductor opposite to the fluid channel, and the other electrode is located on the side of the first semiconductor opposite to the fluid channel. The first semiconductor is one of an N-type semiconductor and a P-type semiconductor, and the second semiconductor is the other of an N-type semiconductor and a P-type semiconductor.

2. The continuous fluid in-situ monitoring device according to claim 1, characterized in that, Both the first semiconductor and the second semiconductor are in the form of a sheet; along the second direction, the second semiconductor and the first semiconductor are located on the same side of the fluid channel; The continuous fluid in-situ monitoring device further includes a pipe assembly comprising a first flow channel plate and a second flow channel plate; along the second direction, the first flow channel plate is located on the side of the second flow channel plate opposite to the electrode and is fixed to the second flow channel plate, wherein: The first flow channel plate is provided with a flow cavity, which forms the fluid channel; the flow cavity has a first opening on the side facing the second flow channel plate; The second flow channel plate is provided with two through slots spaced apart along the first direction. The first semiconductor is placed in one of the through slots, and the second semiconductor is placed in the other through slot. Both the second semiconductor and the first semiconductor are exposed in the flow cavity through the first opening.

3. The continuous fluid in-situ monitoring device according to claim 2, characterized in that, Along the second direction, the thickness of the second flow channel plate is the same as the thickness of the second semiconductor and the first semiconductor, and the side surface of the first semiconductor facing the first flow channel plate is flush with the side surface of the second flow channel plate facing the first flow channel plate, and the side surface of the second semiconductor facing the first flow channel plate is flush with the side surface of the second flow channel plate facing the first flow channel plate.

4. The continuous fluid in-situ monitoring device according to claim 2, characterized in that, Along the second direction, the flow cavity is further provided with a second opening on the side opposite to the second flow channel plate; the pipe assembly also includes a housing, the housing closes the second opening, and the housing is provided with an inlet and an outlet communicating with the flow cavity; along the first direction, the inlet and the outlet are spaced apart, and the second semiconductor and the first semiconductor are located between the inlet and the outlet.

5. The continuous fluid in-situ monitoring device according to claim 2, characterized in that, The continuous fluid in-situ monitoring device further includes a base plate, which is fixed relative to the pipeline assembly. The base plate is provided with two mounting grooves spaced apart along the first direction; the electrode is fixed in the corresponding mounting groove.

6. The continuous fluid in-situ monitoring device according to claim 1, characterized in that, Both the second semiconductor and the first semiconductor are ring-shaped or semi-ring-shaped structures, and the fluid channel extends through the ring-shaped or semi-ring-shaped structure. Of the two electrodes, one electrode is placed on the side of the corresponding second semiconductor that is away from the fluid channel; the other electrode is placed on the side of the corresponding first semiconductor that is away from the fluid channel.

7. The continuous fluid in-situ monitoring device according to claim 6, characterized in that, The electrode corresponding to the second semiconductor has a ring structure or a semi-ring structure; And / or, the electrode corresponding to the first semiconductor is a ring structure or a semi-ring structure.

8. The continuous fluid in-situ monitoring device according to claim 6 or 7, characterized in that, The continuous fluid in-situ monitoring device further includes a pipe fitting, the inner wall of which is provided with two grooves; the first semiconductor and the corresponding electrode are embedded in one of the grooves, and the second semiconductor and the corresponding electrode are embedded in the other groove; the pipe fitting forms the fluid channel.

9. The continuous fluid in-situ monitoring device according to claim 8, characterized in that, The inner surface of the first semiconductor is flush with the inner wall surface of the pipe component; And / or, the inner surface of the second semiconductor is flush with the inner wall surface of the conduit.

10. The continuous fluid in-situ monitoring device according to any one of claims 1-7, characterized in that, It also includes an analysis module, which is electrically connected to the electrode and is used to acquire and analyze the electrical signals generated by the triboelectric component to determine the fluid state.

11. A method for in-situ monitoring of continuous fluid, characterized in that, The device is applied to the continuous fluid in-situ monitoring device as described in any one of claims 1-10, comprising: The continuous fluid is controlled to flow sequentially through one of the first semiconductor and the second semiconductor in a first direction within the fluid channel, and then through the other semiconductor; The electrical signal output from the electrode is acquired and analyzed to determine the fluid state and generate a result signal.

12. The continuous fluid in-situ monitoring method according to claim 11, characterized in that, Also includes: Set a safety threshold and determine whether the result signal exceeds the safety threshold. If the result signal exceeds the safety threshold, trigger an alarm.

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