PECVD equipment cleaning method, system and equipment and storage medium

Abstract

The invention relates to the technical field of PECVD equipment cleaning, and discloses a PECVD equipment cleaning method, system and equipment and a storage medium, and the method comprises the steps: generating free radical regulation and control parameters and pressure regulation and control parameters based on film layer information; the gas ratio of the gas supply unit and the plasma source power of the double-remote plasma source unit are adjusted based on the free radical regulation and control parameters, so that free radical concentration distribution in the cavity is initialized; based on the pressure regulation and control parameters, controlling a vacuum pumping and discharging unit to perform staged vacuumizing on the cavity so as to initialize an internal pressure field of the cavity; controlling the double-remote plasma source unit to perform in-situ cleaning on the interior of the cavity; after in-situ cleaning is completed, a cleaning effect index in the cavity is obtained through a detection unit; if the cleaning effect index shows that cleaning reaches the standard, the internal environment of the cavity is reset, and a cleaning completion signal is generated; the problems that cleaning is not matched and not thorough in the prior art are solved, and the cleaning quality of the PECVD equipment is improved.

Description

Technical Field

[0001] This invention relates to the field of PECVD equipment cleaning technology, and in particular to a PECVD equipment cleaning method, system, equipment and storage medium. Background Technology

[0002] Plasma-enhanced chemical vapor deposition (PECVD) equipment is commonly used to deposit thin films on semiconductor substrates, liquid crystal panels, and solar cells (high-efficiency heterojunction solar cells); the PECVD equipment is cleaned in situ without disassembly to remove the deposited silicon film layer. However, existing cleaning methods often directly use fixed gas ratios, plasma power, and vacuum parameters without customizing and adapting parameters based on the type and thickness of the film to be cleaned. This results in a mismatch between the amount of free radicals generated and the reaction requirements of the film, and a mismatch between the chamber pressure field and the free radical transport requirements. Ultimately, this leads to significant differences in the degree of cleaning in different areas of the chamber, which seriously affects the uniformity and quality stability of the film deposited by subsequent PECVD equipment. Summary of the Invention

[0003] To overcome the shortcomings of existing technologies, the present invention aims to provide a PECVD equipment cleaning method, system, equipment, and storage medium. The technical solution of the present invention solves the problems of mismatch and incomplete cleaning in existing technologies by customizing parameters, optimizing the environment, precise cleaning, and verifying and resetting logic, thereby significantly improving the cleaning quality of PECVD equipment.

[0004] The first aspect of this invention provides a PECVD equipment cleaning method, applied to a PECVD equipment cleaning system. The PECVD equipment cleaning system includes: a control device and a gas supply unit, a dual remote plasma source unit, a vacuum extraction unit, and a detection unit electrically connected to the control device; the PECVD equipment cleaning method includes the following steps: Obtain the membrane information of the PECVD cavity to be cleaned, and generate free radical control parameters and pressure control parameters based on the membrane information; The gas ratio of the gas supply unit and the plasma source power of the dual remote plasma source unit are adjusted based on the free radical control parameters to initialize the free radical concentration distribution inside the cavity. The vacuum pumping unit is controlled by pressure regulation parameters to pump the cavity in stages to initialize the internal pressure field of the cavity. After the free radical concentration distribution and pressure field are initialized, the dual remote plasma source units are controlled to perform in-situ cleaning of the cavity. After the in-situ cleaning is completed, the cleaning effect indicators inside the cavity are obtained through the detection unit; If the cleaning effect indicators show that the cleaning meets the standards, the internal environment of the cavity will be reset and a cleaning completion signal will be generated.

[0005] Optionally, in a first implementation of the first aspect of the present invention, the step of obtaining the membrane information of the PECVD cavity to be cleaned and generating free radical control parameters and pressure control parameters based on the membrane information includes: obtaining the cavity volume and membrane information of the PECVD cavity to be cleaned; the membrane information includes membrane type and membrane thickness data; calculating the total amount of free radicals required for cleaning based on the membrane thickness data to obtain free radical control parameters; and generating pressure control parameters based on the membrane type and cavity volume.

[0006] Optionally, in a second implementation of the first aspect of the present invention, the step of adjusting the gas ratio of the gas supply unit and the plasma source power of the dual remote plasma source unit based on free radical control parameters to initialize the free radical concentration distribution inside the cavity includes: adjusting the gas ratio of the gas supply unit and the plasma source power of the dual remote plasma source unit based on free radical control parameters; controlling the gas supply unit to supply mixed gas into the cavity and starting the dual remote plasma source unit to ionize the mixed gas to generate fluorine free radicals; obtaining the fluorine free radical concentration inside the cavity, and adjusting the gas ratio of the gas supply unit or the plasma source power of the dual remote plasma source unit according to the fluorine free radical concentration until the fluorine free radical concentration meets the preset uniformity requirements, so as to complete the initialization of the free radical concentration distribution inside the cavity.

[0007] Optionally, in a third implementation of the first aspect of the present invention, the PECVD equipment cleaning system further includes a multi-point pressure detection unit electrically connected to the control device; the step of controlling the vacuum pumping unit to perform staged vacuuming of the cavity based on pressure regulation parameters to initialize the internal pressure field of the cavity includes: the pressure regulation parameters include a first-stage coarse pumping target pressure, a second-stage fine pumping target pressure, and a pressure uniformity threshold; opening the coarse pumping valve of the vacuum pumping unit to perform coarse vacuuming of the cavity until the average pressure of the cavity drops to the first-stage coarse pumping target pressure; and closing the vacuum valve. The coarse evacuation valve of the extraction unit is opened, and the fine evacuation valve is opened to perform fine evacuation of the cavity until the average pressure of the cavity drops to the target pressure of the second stage fine evacuation. The real-time pressure at each point in the cavity is obtained through the multi-point pressure detection unit, and the pressure deviation between the real-time pressure and the target pressure of the second stage fine evacuation is calculated. It is determined whether the pressure deviation is less than the pressure uniformity threshold. If there is a point where the pressure deviation is greater than the pressure uniformity threshold, the opening of the fine evacuation valve is adjusted to perform fine evacuation of the cavity until the pressure deviation at all points is less than the pressure uniformity threshold, so as to complete the initialization of the internal pressure field of the cavity.

[0008] Optionally, in the fourth implementation of the first aspect of the present invention, after the initialization of the free radical concentration distribution and pressure field, controlling the dual remote plasma source unit to perform in-situ cleaning of the cavity includes: after the initialization of the free radical concentration distribution and pressure field, controlling the dual remote plasma source unit to deliver fluorine free radicals into the cavity within a preset cleaning time, and controlling the vacuum pumping unit to discharge the silicon fluoride gas generated by the reaction of fluorine free radicals with the film layer from the cavity, so as to complete the in-situ cleaning of the cavity.

[0009] Optionally, in a fifth implementation of the first aspect of the present invention, after the in-situ cleaning is completed, obtaining the cleaning effect index of the cavity through the detection unit includes: the detection unit includes a cleanliness detection component and a gas composition detection component; obtaining reflectivity data of the inner wall of the cavity through the cleanliness detection component; obtaining silicon fluoride gas concentration data of the exhaust outlet of the vacuum pumping unit through the gas composition detection component; and generating a cleaning effect index based on the reflectivity data and the silicon fluoride gas concentration data.

[0010] Optionally, in the sixth implementation of the first aspect of the present invention, the step of resetting the internal environment of the cavity and generating a cleaning completion signal if the cleaning effect index shows that the cleaning meets the standard includes: comparing the cleaning effect index with a preset threshold to obtain a comparison result; if the comparison result shows that the cleaning meets the standard, stopping the operation of the dual remote plasma source unit and controlling the vacuum pumping unit to perform gas purification and depressurization treatment on the cavity to reset the internal environment of the cavity; and generating a cleaning completion signal after the internal environment of the cavity is reset.

[0011] A second aspect of the present invention provides a PECVD equipment cleaning system, the PECVD equipment cleaning system comprising a control device and a gas supply unit, a dual remote plasma source unit, a vacuum pumping unit and a detection unit electrically connected to the control device; the control device is used to perform the PECVD equipment cleaning method described in any of the above claims.

[0012] A third aspect of the present invention provides a PECVD equipment cleaning apparatus, the PECVD equipment cleaning apparatus comprising: a memory and at least one processor, the memory storing instructions; the at least one processor calling the instructions in the memory to cause the computer device to perform the various steps of the PECVD equipment cleaning method described in any of the preceding claims.

[0013] A fourth aspect of the present invention provides a computer-readable storage medium storing instructions that, when executed by a processor, implement the steps of the PECVD equipment cleaning method described in any of the preceding claims.

[0014] In the technical solution of this invention, firstly, specific information about the film layer to be cleaned is obtained to customize cleaning parameters, ensuring that the subsequent free radical generation, pressure field parameters, and film reaction requirements are precisely matched; secondly, a uniform free radical concentration environment and a stable pressure field are constructed through targeted parameter adjustments to ensure that each area of ​​the chamber has sufficient reaction conditions; subsequently, in-situ cleaning is carried out, allowing uniform free radicals to fully react with the film layer in a stable pressure field; then, cleaning effect indicators are obtained through a detection unit to achieve visual verification of the cleaning effect; after ensuring that the cleaning meets the standards, the chamber is restored to a state that meets the requirements for subsequent deposition; the technical solution of this invention, through the logic of customized parameters, optimized environment, precise cleaning, and verification reset, solves the problems of mismatch and incomplete cleaning in existing technologies, significantly improving the cleaning quality of PECVD equipment. Attached Figure Description

[0015] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a first flowchart of a PECVD equipment cleaning method provided in an embodiment of the present invention; Figure 2 This is a second flowchart of a PECVD equipment cleaning method provided in an embodiment of the present invention; Figure 3 This is a third flowchart of a PECVD equipment cleaning method provided in an embodiment of the present invention; Figure 4 This is a fourth flowchart of a PECVD equipment cleaning method provided in an embodiment of the present invention; Figure 5 This is a fifth flowchart of a PECVD equipment cleaning method provided in an embodiment of the present invention; Figure 6 This is a sixth flowchart of a PECVD equipment cleaning method provided in an embodiment of the present invention; Figure 7 This is a seventh flowchart of a PECVD equipment cleaning method provided in an embodiment of the present invention; Figure 8 This is a schematic diagram of the structure of the PECVD equipment cleaning system provided in an embodiment of the present invention; Figure 9 This is a schematic diagram of the structure of the PECVD equipment cleaning device provided in an embodiment of the present invention. Detailed Implementation

[0016] This invention provides a cleaning method, system, equipment, and storage medium for PECVD equipment. First, it acquires specific information about the film layer to be cleaned to customize cleaning parameters, ensuring a precise match between the subsequent free radical generation, pressure field parameters, and film reaction requirements. Second, it constructs a uniform free radical concentration environment and a stable pressure field through targeted parameter adjustments, ensuring sufficient reaction conditions in all areas of the chamber. Subsequently, in-situ cleaning is performed, allowing uniform free radicals to fully react with the film layer in a stable pressure field. Then, a detection unit acquires cleaning effect indicators, enabling visual verification of the cleaning effect. After ensuring that the cleaning meets the standards, the chamber is restored to a state that meets the requirements for subsequent deposition. The technical solution of this invention, through the logic of customized parameters, optimized environment, precise cleaning, and verification reset, solves the problems of mismatch and incomplete cleaning in existing technologies, significantly improving the cleaning quality of PECVD equipment.

[0017] The terms "first," "second," "third," "fourth," etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" or "having" and any variations thereof are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0018] For ease of understanding, the specific process of the embodiments of the present invention is described below. Please refer to [link / reference]. Figure 1 One embodiment of the PECVD equipment cleaning method in this invention includes: The PECVD equipment cleaning system includes: a control device and a gas supply unit, a dual remote plasma source unit, a vacuum pumping unit, and a detection unit electrically connected to the control device; The PECVD equipment cleaning system also includes a multi-point pressure detection unit electrically connected to the control device; The detection unit includes a cleanliness detection component and a gas composition detection component; In this embodiment, the PECVD equipment cleaning system specifically includes: The control device, as the central hub of the system, is responsible for receiving feedback data from each detection component, parsing membrane information to generate control parameters, issuing control commands to each execution unit, and storing cleaning process data. It uses a Siemens SIMATIC S7-1515F programmable logic controller, equipped with a Siemens ET200SP distributed I / O module as a communication device, and is also equipped with a Beckhoff CP2215 touch screen as a human-machine interface. The gas supply unit includes: two Agilent 8553 gas mass flow controllers (to control NF3 gas and Ar gas respectively), a gas mixer (for mixing gases), and three solenoid valves (to control the NF3 gas, Ar gas and mixed gas passages respectively). The dual remote plasma source unit employs two MKS ASTeX AX7670 remote plasma sources, equipped with an MKSRF-1250 RF power supply (13.56MHz, power range 0-1500W, adjustment step 1W). The plasma source outlet is equipped with a quartz conduit, with a heating sleeve wrapped around its outer side. The quartz conduit is heat-resistant and fluoride-resistant, preventing the introduction of impurities due to the reaction between free radicals and the conduit material. The heating sleeve ensures no condensate blockage within the conduit, guaranteeing stable free radical transmission. The two plasma sources are fixed to the top sides of the PECVD chamber via adjustable stainless steel brackets, with an angle adjustment range of 90°-120°. The conduit outlet is 150mm from the chamber wall, ensuring that the free radical flows generated by the dual sources converge at the center of the chamber, thereby eliminating the edge attenuation zone of single-source cleaning. The vacuum pumping unit includes a vacuum pump, two pneumatic vacuum valves (a coarse pumping valve and a fine pumping valve, respectively), and a check valve (to prevent gas backflow). The detection unit includes a cleanliness detection component (Keyence LK-G80 laser reflectometer) and a gas composition detection component (Agilent 7890B gas chromatograph). The laser reflectometer is installed outside the observation window on the side wall of the cavity (50mm from the wall surface) and acquires reflectivity data by scanning the cavity wall surface with a laser (scanning angle 120°). The gas chromatograph is connected to the outlet of the vacuum extraction unit through a sampling tube to detect the concentration of silicon fluoride gas at the extraction port in real time. The multi-point pressure detection unit includes twelve Kistler 4085A piezoresistive pressure sensors. The twelve sensors are arranged in the cavity according to the following layout: two at the top of the cavity (corresponding to the area below the dual plasma source outlet), four on the side wall (evenly distributed along the circumference), three at the bottom (including the center and edge of the workpiece stage), and three at the exhaust port, in order to comprehensively capture the pressure distribution inside the cavity.

[0019] The control principle of the PECVD equipment cleaning system is as follows: The control device receives membrane information input by the operator via a touch screen, calculates the total amount of free radicals (total amount of free radicals = membrane thickness × cavity surface area × reaction coefficient) based on the membrane thickness, and generates free radical control parameters and pressure control parameters. The control device sends a mixing ratio command to the gas supply unit. The flow controller adjusts the flow rates of NF3 gas and Ar gas according to the ratio. After mixing, the mixture is introduced into the dual plasma source. The radio frequency power supply starts at the preset power, and the ionized gas generates fluorine radicals. The control device starts the vacuum pump, first opens the coarse pumping valve to reduce the chamber pressure to the first stage coarse pumping target pressure, and then switches to the fine pumping valve to reduce it to the second stage fine pumping target pressure. The pressure sensor collects data. If there is a pressure deviation, the control device increases the opening of the corresponding area pumping branch valve until the pressure deviation at all points is less than the pressure uniformity threshold. After the control device confirms that the two initializations are completed, it maintains the power of the dual plasma sources and the mixed gas input flow rate, and keeps the vacuum pump's fine pumping valve open; fluorine radicals react with the amorphous silicon film in the chamber to generate silicon fluoride gas, and the vacuum pump discharges the silicon fluoride gas in real time; After the preset cleaning time is completed, the control device shuts off the plasma source and mixed gas supply, and introduces inert gas into the cavity; the laser reflectometer detects the wall reflectivity, and the gas chromatograph detects the concentration of silicon fluoride gas to determine whether the cleaning meets the standard. If both meet the standard, the control device opens the pressure relief valve to release the gas pressure in the cavity to atmospheric pressure and generates a cleaning completion signal; if the standard is not met, it returns to the original cleaning stage until the standard is met.

[0020] The PECVD equipment cleaning method includes the following steps: 101. Obtain the membrane information of the PECVD cavity to be cleaned, and generate free radical control parameters and pressure control parameters based on the membrane information; In this embodiment, information such as membrane type and thickness is collected by the detection unit, and combined with the preset process database, the total amount of free radicals required for cleaning and the appropriate pressure range are calculated. Free radical control parameters containing gas ratio and plasma power, as well as pressure control parameters containing staged vacuum target pressure, are generated.

[0021] 102. Adjust the gas ratio of the gas supply unit and the plasma source power of the dual remote plasma source unit based on the free radical control parameters to initialize the free radical concentration distribution inside the cavity; In this embodiment, the flow ratio of NF3 gas to Ar gas in the gas supply unit and the power of the dual plasma sources are first adjusted according to the free radical control parameters. Combined with free radical concentration monitoring, the difference in free radical concentration in each region of the cavity meets the uniformity requirements, so as to complete the initialization of free radical concentration distribution.

[0022] 103. Based on the pressure regulation parameters, the vacuum pumping unit is controlled to perform staged vacuuming of the cavity in order to initialize the internal pressure field of the cavity; In this embodiment, the coarse extraction valve is first opened to draw pressure to the first stage target pressure, and then the fine extraction valve is switched to draw pressure to the second stage target pressure. At the same time, pressure deviation is corrected by multi-point pressure detection to ensure that the pressure at each point in the cavity meets the uniformity threshold, so as to complete the initialization of the pressure field inside the cavity.

[0023] 104. After the free radical concentration distribution and pressure field are initialized, control the dual remote plasma source unit to perform in-situ cleaning of the cavity. In this embodiment, the dual plasma sources are maintained to stably output fluorine radicals into the cavity within a preset cleaning time, and the vacuum pumping unit is simultaneously turned on to discharge the silicon fluoride gas generated by the reaction, thereby completing the in-situ cleaning of the cavity.

[0024] 105. After the in-situ cleaning is completed, the cleaning effect index inside the cavity is obtained through the detection unit; In this embodiment, a cleanliness detection component is used to detect the reflectivity of the inner wall of the cavity, and a gas composition detection component is used to detect the concentration of silicon fluoride gas at the outlet of the vacuum unit. Cleaning effect indicators are generated based on the inner wall reflectivity and the silicon fluoride gas concentration.

[0025] 106. If the cleaning effect indicators show that the cleaning meets the standards, the internal environment of the cavity will be reset and a cleaning completion signal will be generated. In this embodiment, if the cleaning effect index shows that the cleaning effect index meets the standard, the dual remote plasma source unit is turned off, and inert gas is introduced into the cavity through the vacuum pumping unit to purify the cavity and complete the depressurization, reset the internal components of the cavity, and finally generate a cleaning completion signal to indicate that the cleaning process is complete.

[0026] In this embodiment of the invention, the specific information of the film layer to be cleaned is first obtained to customize the cleaning parameters, ensuring that the subsequent free radical generation, pressure field parameters and film reaction requirements are precisely matched; secondly, a uniform free radical concentration environment and a stable pressure field are constructed by targeted parameter adjustments to ensure that each area of ​​the chamber has sufficient reaction conditions; subsequently, in-situ cleaning is carried out to allow the uniform free radicals to fully react with the film layer in a stable pressure field; then, the cleaning effect index is obtained through the detection unit to achieve visual verification of the cleaning effect; after ensuring that the cleaning meets the standards, the chamber is restored to a state that meets the requirements for subsequent deposition; the technical solution of this invention, through the logic of customized parameters, optimized environment, precise cleaning, and verification reset, solves the problems of mismatch and incomplete cleaning in the prior art, and significantly improves the cleaning quality of PECVD equipment.

[0027] Please see Figure 2 Two embodiments of the PECVD equipment cleaning method in this invention include: 201. Obtain the cavity volume and membrane information of the PECVD cavity to be cleaned; the membrane information includes membrane type and membrane thickness data; In this embodiment, the cavity volume of the PECVD cavity to be cleaned (referring to the effective space volume inside the cavity that can contact free radicals, after deducting the volume occupied by the workpiece stage, sensors and other structures) is determined by cavity design drawings, equipment technical manuals or cavity volume calibration tools (such as vacuum calibration). The membrane type is confirmed by the previous deposition process record of the PECVD equipment, the membrane composition detection tool, or by the operator according to production needs. The film thickness data is obtained through the cleanliness detection component in the detection unit: First, at least three characteristic areas (such as the top center, the middle of the side wall, and the bottom edge) are selected on the cavity wall for multi-point scanning. Based on the calibration relationship of "film reflectivity / polarization characteristics-film thickness", the film thickness of each area is calculated and the average value is taken as the final film thickness data, ensuring that the film thickness data covers the key areas of the cavity and conforms to the actual deposition situation.

[0028] 202. Calculate the total amount of free radicals required for cleaning based on film thickness data to obtain free radical control parameters; In this embodiment, the total amount of free radicals required for cleaning is calculated using the "film reaction relationship + free radical utilization rate correction", as follows: 1. First, determine the reaction equation and stoichiometric ratio between the membrane and the target free radical. Based on the type of membrane to be cleaned, clarify the reaction equation between the membrane and the fluorine free radical. Based on the stoichiometric relationship, determine the number of moles required for 1 mol of membrane to react completely. ; 2. Calculate the total amount of material in the membrane layer to be cleaned on the cavity wall. First, obtain the total surface area S of the inner wall of the cavity covered by the membrane layer, the membrane thickness h (membrane thickness data), determine the density ρ of the membrane layer (determined by the membrane layer type and deposition process), and the molar mass M (calculated based on the chemical composition and stoichiometry of the membrane layer). Based on the formula: total amount of material n=(S×h×ρ) / M, the total amount of material in the membrane layer n1 can be calculated. 3. Calculate the total amount of material theoretically required to clean the membrane layer: n2 = n1 × , where m is the theoretical total number of moles required to completely clean the film layer; 4. Introduction of free radical utilization rate correction: Considering the losses of fluorine free radicals generated by dual remote plasma sources, such as recombination and failure to participate in the reaction; therefore, the actual total amount of fluorine free radicals required is n3 = n2 × fluorine free radical utilization rate. ; 5. Derive the radical control parameters, including the mixing ratio of NF3 gas and Ar gas, and the power of the dual long-range plasma sources. The derivation logic is as follows: NF3 gas is the source of fluorine radicals. Based on the NF3 gas ionization efficiency β of the plasma source (determined by the performance parameters provided by the plasma source manufacturer or experimental calibration) and the preset cleaning time t, the NF3 gas flow rate Q = n3 / (β×t) can be obtained. Ar gas serves as a carrier for diluting and stabilizing the gas flow. The mixing ratio of NF3 gas and Ar gas needs to be set according to the reactivity of the membrane layer and the requirements for stable operation of the plasma source, which is generally 1:1. Dual remote plasma source power P: Based on the fitting curve of plasma source power and fluorine radical generation, combined with the total amount of fluorine radicals n3 and the preset cleaning time t, the total power of the dual remote plasma sources can be determined. Then, according to the principle of uniform distribution of dual sources, the power of a single plasma source can be obtained.

[0029] 203. Generate pressure control parameters based on membrane type and cavity volume; In this embodiment, the pressure control parameters include the target pressure P1 for the first stage coarse pumping, the target pressure P2 for the second stage fine pumping, and the pressure uniformity threshold ΔP. Determine the target pressure P2 (core working pressure) for the second stage of fine extraction: In the main reaction stage of cleaning, the reaction rate increases with increasing pressure, but excessively high pressure will hinder product discharge, while excessively low pressure will reduce the probability of free radical collision reactions. Therefore, the target pressure P2 for the second stage of fine extraction is related to the reaction activity corresponding to the membrane type and the chamber volume. The optimal pressure range can be determined by testing the membrane cleaning rate and residual rate under different pressures, and the median value of the optimal range is taken as the target pressure P2 for the second stage of fine extraction. Determine the target pressure P1 for the first stage of roughing: The goal of the roughing stage is to quickly reduce the chamber pressure to a range close to the target pressure P2 for the second stage of fineing, laying the foundation for the fineing stage, while avoiding the film layer from falling off due to a sudden drop in pressure; therefore, the upper limit of the pressure range with a stable and relatively high vacuum pump speed is selected as the target pressure P1 for the first stage of roughing (which can be obtained from the vacuum pump design documents) to ensure that the roughing stage is completed quickly at a high pumping speed and to shorten the vacuuming time. Determine the pressure uniformity threshold ΔP: The calibration of the pressure uniformity threshold ΔP ensures that the pressure deviation in each region will not affect the free radical diffusion uniformity under the target pressure P2 (cleaning core working pressure) of the second stage fine extraction in the cavity. After the cavity pressure stabilizes at the target pressure P2 of the second stage fine extraction, the control gas supply unit introduces mixed gas according to the free radical control parameters, and the free radical concentration is detected in real time using an emission spectrometer. At this time, the vacuum pumping unit maintains the dynamic balance between gas intake and pumping (maintaining the cavity pressure stable at the target pressure P2 of the second stage fine extraction) until the difference in fluorine free radical concentration in each region is ≤2%, which is considered as stable concentration. After the free radical concentration stabilizes, the initial pressure values ​​of the twelve pressure sensors are recorded. The opening of the fine extraction valve is finely adjusted to create different pressure deviations, and the difference in fluorine free radical concentration in each region is detected simultaneously by the emission spectrometer. When the deviation of the pressure at each point from the target pressure P2 of the second stage fine extraction is ≤ΔP, if the corresponding difference in free radical concentration in each region is ≤ the preset allowable value (5%), and the correspondence is consistent for three consecutive verifications, then ΔP at this time is determined as the pressure uniformity threshold.

[0030] Please see Figure 3 The three embodiments of the PECVD equipment cleaning method in this invention include: 301. Adjusting the gas ratio of the gas supply unit and the plasma source power of the dual remote plasma source unit based on free radical control parameters; In this embodiment, the control device first retrieves the generated free radical control parameters and decomposes them into executable instructions for the gas supply unit and the dual remote plasma source unit. For the gas supply unit, the control device sends a flow adjustment instruction to its built-in gas mass flow controller. Based on the mixing ratio in the free radical control parameters, the control device sets the flow thresholds for NF3 gas and Ar gas respectively and adjusts the valve opening of the corresponding gas passage to ensure that the actual flow ratio of the two gases is consistent with the ratio in the free radical control parameters. For the dual remote plasma source unit, the control device sends a power adjustment instruction to its radio frequency power supply. Based on the single-source target power in the free radical control parameters, the control device sets the output power threshold of the radio frequency power supply to ensure that the actual output power of each plasma source in the dual remote plasma source unit is stable within the target power range, providing accurate initial conditions for subsequent mixed gas ionization and fluorine free radical generation.

[0031] 302. Control the gas supply unit to supply mixed gas into the cavity, and start the dual remote plasma source unit to ionize the mixed gas to generate fluorine radicals; In this embodiment, the control device first confirms that the flow rate regulation of the gas supply unit and the power regulation of the dual remote plasma source unit have met the free radical control parameter requirements. Then, it sends a gas delivery command to the gas supply unit to control it to open the gas passage valves of NF3 gas and Ar gas, so that the two gases enter the gas mixer at the set flow rate. The mixer thoroughly stirs the two gases to ensure that the gases are mixed evenly, and then delivers them to the inlet of the dual remote plasma source unit through the connecting pipe. At the same time, the control device sends an ionization start command to the dual remote plasma source unit, and its radio frequency power supply outputs a high-frequency electric field at the set power to ionize the mixed gas entering the plasma source cavity and generate highly reactive fluorine free radicals. During the mixed gas delivery and ionization process, the control device receives the flow feedback signal from the gas supply unit and the ionization status feedback signal from the dual remote plasma source unit in real time (such as whether there is an ionization interruption or abnormal discharge). If flow fluctuation or ionization abnormality occurs, the operation is immediately suspended and an alarm is triggered. After the fault is cleared, the above steps are repeated to ensure the stable generation of fluorine radicals.

[0032] 303. Obtain the concentration of fluorine radicals inside the cavity, and adjust the gas ratio of the gas supply unit or the plasma source power of the dual remote plasma source unit according to the concentration of fluorine radicals until the concentration of fluorine radicals meets the preset uniformity requirements, so as to complete the initialization of the free radical concentration distribution inside the cavity. In this embodiment, the control device activates the component (emission spectrometer) in the detection unit used to monitor the concentration of fluorine free radicals. This component collects fluorine free radical concentration data from at least three characteristic regions inside the cavity (such as the cavity center and the two edges near the dual plasma sources) through a detection window reserved in the cavity, and calculates the actual value of the fluorine free radical concentration in each region. The control device compares the actual concentration value of each region with a preset uniformity requirement (concentration difference between regions ≤ 5%). If the concentration difference in all regions meets the requirement, it is determined that the initialization of the free radical concentration distribution inside the cavity is complete; if the concentration difference in any region exceeds the requirement, ... The reasons for the concentration deviation are analyzed as follows: If the plasma source on the corresponding side of the region does not generate enough free radicals, the control device sends a power fine-tuning command to the dual remote plasma source unit to appropriately increase the output power of the plasma source on that side; if the overall free radical generation is too low due to insufficient NF3 gas content in the mixed gas, the control device sends a ratio fine-tuning command to the gas supply unit to appropriately increase the flow rate ratio of NF3 gas; after each adjustment, the fluorine free radical concentration in each region is re-collected and compared until the fluorine free radical concentration in all regions inside the cavity meets the preset uniformity requirements, and finally the initialization of the free radical concentration distribution inside the cavity is completed.

[0033] Please see Figure 4 The four embodiments of the PECVD equipment cleaning method in this invention include: 401. The pressure control parameters include the target pressure for the first stage coarse extraction, the target pressure for the second stage fine extraction, and the pressure uniformity threshold. In this embodiment, the setting of pressure control parameters needs to be combined with the volume characteristics of the PECVD cavity to be cleaned, the pressure requirements of the film reaction, and the pumping speed capability of the vacuum pumping unit. The target pressure for the first stage of coarse pumping is the transition pressure value that rapidly reduces the initial atmospheric pressure of the cavity to near the core working pressure. The setting logic is to match the high pumping speed range of the coarse pumping valve in the vacuum pumping unit (to ensure that the vacuuming time is shortened with high efficiency during the coarse pumping stage). The target pressure for the second stage of fine pumping is the core working pressure during in-situ cleaning. It needs to be determined based on the reaction rate characteristics of the film and fluorine free radicals (too high pressure will easily lead to poor discharge of reaction products, and too low pressure will reduce the probability of free radical collision reaction) and the pumping stability corresponding to the cavity volume. The pressure uniformity threshold is the standard for measuring the pressure consistency of each area of ​​the cavity. The setting basis is to ensure that the pressure deviation will not affect the uniform diffusion of fluorine free radicals in the cavity (that is, when the pressure deviation at each point is less than the threshold, the free radical distribution uniformity can meet the cleaning requirements). The three together constitute the control benchmark for the initialization of the pressure field.

[0034] 402. Open the coarse evacuation valve of the vacuum pumping unit to perform coarse evacuation of the cavity until the average pressure of the cavity drops to the target pressure of the first stage coarse evacuation. In this embodiment, the control device first sends a coarse pumping start command to the vacuum pumping unit, turning on the vacuum pump and the matching coarse pumping valve (the coarse pumping valve has a large diameter and is suitable for high flow rate pumping requirements) to perform coarse vacuuming on the PECVD chamber. During the process, the control device collects chamber pressure data in real time through the pressure monitoring module built into the vacuum pumping unit (or the main pressure sensor connected to the chamber), and calculates the average chamber pressure every 10 seconds. The control device compares the real-time calculated average pressure with the first-stage coarse pumping target pressure. If the average pressure is higher than the target pressure, the coarse pumping valve remains open. If the average pressure drops to the first-stage coarse pumping target pressure and remains stable for 30 seconds, the control device determines that the coarse pumping stage is complete and prepares to switch to the fine pumping stage.

[0035] 403. Close the coarse evacuation valve of the vacuum pumping unit and open the fine evacuation valve to perform fine evacuation of the cavity until the average pressure of the cavity drops to the target pressure of the second stage fine evacuation. In this embodiment, after confirming the completion of the coarse extraction stage, the control device first issues a coarse extraction valve closing command to the vacuum extraction unit. After the coarse extraction valve is completely closed, it then issues a fine extraction valve opening command (the fine extraction valve has a smaller diameter, suitable for precise extraction under low pressure). During the fine extraction process, the control device tracks the change in average pressure in the cavity in real time through the multi-point pressure detection unit. When the average pressure in the cavity drops to the target pressure of the second stage fine extraction, and this pressure value remains stable for 60 seconds, the control device determines that the fine extraction stage is completed. At this time, the overall pressure of the cavity has reached the core working pressure range of in-situ cleaning.

[0036] 404. The real-time pressure at each point in the cavity is obtained through the multi-point pressure detection unit, and the pressure deviation between the real-time pressure and the target pressure of the second stage fine extraction is calculated. In this embodiment, after the fine extraction stage is completed, the multi-point pressure detection unit is activated to synchronously collect real-time pressure data from all points. After the data collection is completed, the pressure deviation value of each sensor point is calculated one by one based on the calculation formula "pressure deviation value of a single point = real-time pressure of that point - target pressure of the second stage fine extraction" to fully understand the pressure distribution in each area of ​​the cavity.

[0037] 405. Determine whether the pressure deviation value is less than the pressure uniformity threshold. If there is a point where the pressure deviation value is greater than the pressure uniformity threshold, adjust the opening of the fine evacuation valve to perform fine evacuation of the cavity until the pressure deviation value at all points is less than the pressure uniformity threshold, so as to complete the initialization of the pressure field inside the cavity. In this embodiment, the pressure deviation values ​​at each point calculated in step 404 are compared one by one with the preset pressure uniformity threshold. If the deviation values ​​at all points are less than the pressure uniformity threshold, it indicates that the pressure distribution in each area of ​​the cavity is uniform, meeting the requirements of in-situ cleaning for the pressure field. The control device determines that the pressure field initialization inside the cavity is complete. If the deviation value at at least one point is greater than the pressure uniformity threshold, the control device sends a fine-pump valve opening adjustment command to the vacuum pumping unit. The fine-pump valve opening is finely adjusted according to the extent of the deviation exceeding the standard. After each adjustment, the control device restarts the multi-point pressure detection unit to collect pressure data at each point until the pressure deviation values ​​at all points are less than the pressure uniformity threshold, and finally completes the initialization of the pressure field inside the cavity.

[0038] Please see Figure 5 The five embodiments of the PECVD equipment cleaning method in this invention include: 501. After the free radical concentration distribution and pressure field initialization are completed, the dual remote plasma source unit is controlled to deliver fluorine free radicals into the cavity within the preset cleaning time, and the vacuum pumping unit is controlled to discharge the silicon fluoride gas generated by the reaction of fluorine free radicals with the film layer from the cavity to complete the in-situ cleaning of the cavity. In this embodiment, the control device first confirms that both initialization conditions meet the preset conditions (the concentration difference of free radicals in each region ≤ uniformity requirements, and the pressure deviation at each point ≤ pressure uniformity threshold) before starting the in-situ cleaning process. For the dual remote plasma source unit, the control device issues a continuous operation command according to the preset cleaning time, maintaining its power output set according to the free radical control parameters, continuously ionizing the mixed gas delivered by the gas supply unit into fluorine free radicals, and stably delivering them into the cavity through a quartz conduit. The dual-source symmetrical layout allows fluorine free radicals to cover the entire cavity, avoiding the problem of insufficient edge free radicals caused by a single source. At the same time, the control device controls the vacuum pumping unit to keep the fine pumping valve open and maintains the pumping speed according to the target pressure set by the pressure control parameters, ensuring that the silicon fluoride gas generated by the reaction of fluorine free radicals with the membrane layer inside the cavity can be discharged in real time: on the one hand, to avoid the accumulation of silicon fluoride gas in the cavity affecting the free radical reaction activity, and on the other hand, to prevent the reaction products from redepositing on the cavity wall and causing secondary pollution. When the running time reaches the preset cleaning time, the control device determines that the in-situ cleaning inside the cavity is complete.

[0039] Please see Figure 6 The six embodiments of the PECVD equipment cleaning method in this invention include: 601. Obtain reflectivity data of the inner wall of the cavity through the cleanliness detection component; In this embodiment, a laser reflectometer is selected as the cleanliness detection component. Its installation position covers the key areas of the PECVD cavity inner wall (top center, side wall middle, bottom workpiece stage perimeter, and corresponding areas of cavity dead corners, ensuring that the detection data can reflect the cleanliness of the entire area). After the in-situ cleaning is completed, the control device sends a data acquisition command to the cleanliness detection component. The component emits a detection beam of a specific wavelength (650nm red light, chosen because the reflectivity of the residual film layer and the clean wall surface is significantly different, facilitating accurate differentiation). After the detection beam illuminates the target area on the inner wall of the cavity, part of the light is reflected back to the receiving module of the component. The receiving module converts the reflected light signal into an electrical signal and transmits it to the control device. The control device calculates the reflectivity data of each detection area based on the reflected light signal.

[0040] 602. Obtain the concentration data of silicon fluoride gas at the exhaust outlet of the vacuum pumping unit through the gas composition detection component; In this embodiment, a gas chromatograph is used as the gas component detection component. Its sampling port is connected to the exhaust outlet of the vacuum pumping unit through a corrosion-resistant pipe (this location is chosen because silicon fluoride is the only gaseous product of the reaction between the film layer and fluorine free radicals, and the concentration at the exhaust outlet can directly reflect whether the reaction is complete). After the in-situ cleaning is completed, the control device first controls the vacuum pumping unit to maintain a fine pumping state for 3-5 minutes (to ensure that the residual silicon fluoride gas in the chamber is fully discharged to the sampling port), and then issues a concentration detection command to the gas component detection component. The sampling pump of the gas component detection component draws the gas sample from the exhaust outlet, and uses the characteristic absorption characteristics of silicon fluoride gas in the 10.5μm infrared band to convert the gas concentration into the corresponding electrical signal intensity. The control device then calculates the real-time concentration data of silicon fluoride gas at the exhaust outlet based on the electrical signal intensity.

[0041] 603. Generate cleaning effect indicators based on reflectivity data and silicon fluoride gas concentration data.

[0042] Please see Figure 7 The seven embodiments of the PECVD equipment cleaning method in this invention include: 701. Compare the cleaning effect indicators with the preset compliance thresholds to obtain the comparison results; In this embodiment, the preset cleaning standards are as follows: when the reflectivity of each area of ​​the inner wall of the cavity is ≥ the preset reflectivity threshold (85%) and the concentration of silicon fluoride gas is ≤ the preset concentration threshold (1ppm), the cleaning is deemed to be qualified; when both data meet the standards, the cleaning is deemed to be qualified; if any one of them fails to meet the standards, the cleaning is deemed to be unqualified.

[0043] 702. If the comparison results show that the cleaning meets the standard, stop the operation of the dual remote plasma source unit and control the vacuum pumping unit to perform gas purification and depressurization treatment on the cavity to reset the internal environment of the cavity. In this embodiment, after confirming that the cleaning meets the standard, a shutdown command is first sent to the dual remote plasma source unit to turn off its radio frequency power supply, stop the generation of fluorine free radicals, and avoid unnecessary corrosion of the cavity wall by excess free radicals. Subsequently, the internal environment reset procedure of the cavity is initiated: The first step is gas purification. The control device sends a command to the gas supply unit to stop the delivery of NF3 gas and only input inert gas Ar gas. At the same time, the vacuum pumping unit is controlled to keep the fine pumping valve open. The inert gas is used to replace and remove the residual fluorine radicals and silicon fluoride gas in the cavity (i.e., purging treatment). The purging time is set to 5-8 minutes to ensure that the concentration of residual harmful gases in the cavity is reduced to a safe range (fluorine radical concentration ≤0.1ppm). The second step is pressure relief. After the gas purification process is completed, the control device sends a pressure relief command to the vacuum pumping unit, closes the fine pumping valve, and simultaneously opens the pressure relief valve of the cavity, allowing the internal pressure of the cavity to slowly rise from a vacuum state to atmospheric pressure. During the pressure relief process, the control device monitors the cavity pressure in real time through a multi-point pressure detection unit. When the pressure rises to the same level as the external atmospheric pressure, the pressure relief valve and the inert gas supply are closed, completing the reset of the internal environment of the cavity. This ensures that the reset cavity environment meets the initial conditions for subsequent PECVD coating (cleanliness, no harmful residues, and pressure balance with the external environment).

[0044] 703. Once the internal environment of the cavity has been reset, a cleaning completion signal is generated; In this embodiment, the control device confirms the completion of the internal environment reset of the cavity in the following ways: First, it confirms that the inert gas has stopped being delivered by using the flow feedback signal from the gas supply unit; second, it confirms that the cavity pressure has stabilized at atmospheric pressure by using the pressure data from the multi-point pressure detection unit; third, it collects a gas sample from inside the cavity again by using the gas composition detection component of the detection unit to confirm the concentration of fluorine free radicals. When all the above conditions are met, the control device determines that the internal environment reset of the cavity is complete. The control device integrates the key data of this cleaning (such as membrane information, cleaning time, control parameters, cleaning effect indicators, and reset time) to generate a cleaning completion signal. This signal can be displayed through the human-machine interface (touch screen) of the control device, allowing the operator to intuitively confirm the cleaning result.

[0045] The PECVD equipment cleaning method in the embodiments of the present invention has been described above. The PECVD equipment cleaning system in the embodiments of the present invention is described below. Please refer to [link / reference]. Figure 8 One embodiment of the PECVD equipment cleaning system in this invention includes: The PECVD equipment cleaning system includes: a control device 801 and a gas supply unit 802, a dual remote plasma source unit 803, a vacuum extraction unit 804, and a detection unit 805 electrically connected to the control device 801; The PECVD equipment cleaning system also includes a multi-point pressure detection unit 806 electrically connected to the control device 801; The detection unit includes a cleanliness detection component 8051 and a gas composition detection component 8052.

[0046] Figure 9This is a schematic diagram of a PECVD equipment cleaning device 900 provided in an embodiment of the present invention. The PECVD equipment cleaning device 900 can vary significantly due to different configurations or performance. It may include one or more central processing units (CPUs) 910 (e.g., one or more processors) and a memory 920, and one or more storage media 930 (e.g., one or more mass storage devices) for storing application programs 933 or data 932. The memory 920 and storage media 930 can be temporary or persistent storage. The program stored in the storage media 930 may include one or more modules (not shown in the diagram), each module including a series of instruction operations on the PECVD equipment cleaning device 900. Furthermore, the processor 910 may be configured to communicate with the storage media 930 and execute the series of instruction operations in the storage media 930 on the PECVD equipment cleaning device 900 to implement the steps of the PECVD equipment cleaning method provided in the above-described method embodiments.

[0047] The PECVD equipment cleaning device 900 may also include one or more power supplies 940, one or more wired or wireless network interfaces 950, one or more input / output interfaces 960, and / or one or more operating systems 931, such as Windows Server, Mac OS X, Unix, Linux, FreeBSD, etc. Those skilled in the art will understand that... Figure 9 The illustrated PECVD equipment cleaning device structure does not constitute a limitation on the PECVD equipment cleaning device, and may include more or fewer components than illustrated, or combine certain components, or have different component arrangements.

[0048] The present invention also provides a computer-readable storage medium, which can be a non-volatile computer-readable storage medium or a volatile computer-readable storage medium, wherein the computer-readable storage medium stores instructions that, when executed on a computer, cause the computer to perform the steps of the PECVD equipment cleaning method.

[0049] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the system, device, or unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0050] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0051] Finally, it should be noted that the above descriptions are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for cleaning PECVD equipment, characterized in that, An application is made to a PECVD equipment cleaning system, the PECVD equipment cleaning system comprising: a control device and a gas supply unit, a dual remote plasma source unit, a vacuum extraction unit, and a detection unit electrically connected to the control device; the PECVD equipment cleaning method comprises the following steps: Obtain the membrane information of the PECVD cavity to be cleaned, and generate free radical control parameters and pressure control parameters based on the membrane information; The gas ratio of the gas supply unit and the plasma source power of the dual remote plasma source unit are adjusted based on the free radical control parameters to initialize the free radical concentration distribution inside the cavity. The vacuum pumping unit is controlled by pressure regulation parameters to pump the cavity in stages to initialize the internal pressure field of the cavity. After the free radical concentration distribution and pressure field are initialized, the dual remote plasma source units are controlled to perform in-situ cleaning of the cavity. After the in-situ cleaning is completed, the cleaning effect indicators inside the cavity are obtained through the detection unit; If the cleaning effect indicators show that the cleaning meets the standards, the internal environment of the cavity will be reset and a cleaning completion signal will be generated.

2. The PECVD equipment cleaning method according to claim 1, characterized in that, The process of acquiring the membrane information of the PECVD cavity to be cleaned, and generating free radical control parameters and pressure control parameters based on the membrane information, includes: Obtain the cavity volume and membrane information of the PECVD cavity to be cleaned; the membrane information includes membrane type and membrane thickness data. The total amount of free radicals required for cleaning is calculated based on the film thickness data to obtain the free radical control parameters; Pressure regulation parameters are generated based on membrane type and cavity volume.

3. The PECVD equipment cleaning method according to claim 1, characterized in that, The method of adjusting the gas ratio of the gas supply unit and the plasma source power of the dual remote plasma source unit based on free radical control parameters to initialize the free radical concentration distribution inside the cavity includes: The gas ratio of the gas supply unit and the plasma source power of the dual remote plasma source unit are adjusted based on the free radical control parameters. The control gas supply unit supplies mixed gas into the cavity and activates the dual remote plasma source unit to ionize the mixed gas and generate fluorine radicals; The concentration of fluorine radicals inside the cavity is obtained, and the gas ratio of the gas supply unit or the plasma source power of the dual remote plasma source unit is adjusted according to the concentration of fluorine radicals until the concentration of fluorine radicals meets the preset uniformity requirements, so as to complete the initialization of the free radical concentration distribution inside the cavity.

4. The PECVD equipment cleaning method according to claim 1, characterized in that, The PECVD equipment cleaning system also includes a multi-point pressure detection unit electrically connected to the control device; the vacuum pumping unit controlled by pressure regulation parameters performs staged vacuuming of the cavity to initialize the internal pressure field of the cavity, including: The pressure control parameters include the target pressure for the first stage coarse extraction, the target pressure for the second stage fine extraction, and the pressure uniformity threshold. Open the coarse evacuation valve of the vacuum pumping unit to perform coarse evacuation of the cavity until the average pressure of the cavity drops to the target pressure of the first stage coarse evacuation. Close the coarse evacuation valve of the vacuum pumping unit and open the fine evacuation valve to perform fine evacuation of the cavity until the average pressure of the cavity drops to the target pressure of the second stage fine evacuation. The real-time pressure at each point in the cavity is obtained through a multi-point pressure detection unit, and the pressure deviation between the real-time pressure and the target pressure of the second-stage fine extraction is calculated. Determine whether the pressure deviation value is less than the pressure uniformity threshold. If there is a point where the pressure deviation value is greater than the pressure uniformity threshold, adjust the opening of the fine evacuation valve to perform fine evacuation of the cavity until the pressure deviation value at all points is less than the pressure uniformity threshold, so as to complete the initialization of the pressure field inside the cavity.

5. The PECVD equipment cleaning method according to claim 1, characterized in that, After the initialization of the free radical concentration distribution and pressure field is completed, controlling the dual remote plasma source unit to perform in-situ cleaning of the cavity includes: After the free radical concentration distribution and pressure field initialization are completed, the dual remote plasma source unit is controlled to deliver fluorine free radicals into the cavity within a preset cleaning time, and the vacuum pumping unit is controlled to discharge the silicon fluoride gas generated by the reaction of fluorine free radicals with the film layer from the cavity, so as to complete the in-situ cleaning of the cavity.

6. The PECVD equipment cleaning method according to claim 1, characterized in that, After the in-situ cleaning is completed, the cleaning effect indicators obtained through the detection unit include: The detection unit includes a cleanliness detection component and a gas composition detection component; The reflectivity data of the inner wall of the cavity is obtained through a cleanliness detection component; The concentration data of silicon fluoride gas at the exhaust outlet of the vacuum pumping unit is obtained through a gas composition detection component; Cleaning effectiveness indicators are generated based on reflectivity data and silicon fluoride gas concentration data.

7. The PECVD equipment cleaning method according to claim 1, characterized in that, If the cleaning effect indicators show that the cleaning meets the standards, then resetting the internal environment of the cavity and generating a cleaning completion signal includes: The cleaning effect indicators are compared with the preset compliance thresholds to obtain the comparison results; If the comparison results show that the cleaning meets the standards, the dual remote plasma source unit will stop working, and the vacuum pumping unit will be controlled to perform gas purification and depressurization treatment on the cavity to reset the internal environment of the cavity. Once the internal environment of the cavity has been reset, a cleaning completion signal is generated.

8. A PECVD equipment cleaning system, characterized in that, The PECVD equipment cleaning system includes a control device and a gas supply unit, a dual remote plasma source unit, a vacuum extraction unit, and a detection unit electrically connected to the control device; the control device is used to perform the PECVD equipment cleaning method as described in any one of claims 1-7.

9. A cleaning device for PECVD equipment, characterized in that, The PECVD equipment cleaning device includes: a memory and at least one processor, wherein the memory stores instructions; At least one of the processors invokes the instructions in the memory to cause the PECVD equipment cleaning apparatus to perform the various steps of the PECVD equipment cleaning method as described in any one of claims 1-7.

10. A computer-readable storage medium storing instructions thereon, characterized in that, When the instructions are executed by the processor, they implement the various steps of the PECVD equipment cleaning method as described in any one of claims 1-7.

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