A chamber structure for a remote plasma oxidation apparatus and a method of using the same

Abstract

The application discloses a cavity structure for a remote plasma oxidation device and a use method thereof, and belongs to the technical field of semiconductor devices.The cavity structure comprises a recessed cavity, an inner wall of the cavity is provided with a coating with an oxygen atom recombination coefficient less than a first threshold value, a plasma inlet and a wafer conveying port are arranged on the side wall of the cavity, a metal ring is fixedly arranged above the bottom surface of the cavity, a quartz ring is arranged above the metal ring, and a first cooling assembly is arranged in the cavity.By arranging the coating with the oxygen atom recombination coefficient less than the first threshold value on the cavity, the loss of the plasma transmission process is reduced, the utilization rate of active oxygen atoms is improved, the metal ring is arranged on the bottom surface of the cavity, the heat dissipation rate of the bottom quartz ring is improved, the wafer temperature uniformity in the wafer processing process is improved, and the wafer film thickness uniformity is improved.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor equipment technology, specifically relating to a cavity structure for a remote plasma oxidation device and its usage method. Background Technology

[0002] Remote Plasma Oxidation (RPO) is a device that utilizes plasma technology to oxidize material surfaces under low or medium temperature conditions. Its core feature is the separation of the plasma generation zone and the sample processing zone, avoiding direct bombardment of the sample by high-energy particles, thus achieving a gentler and more controllable oxidation process. RPO relies on the small (atomic-scale) and chargeless reactive oxygen species (O*), which allows for easier free diffusion into the depths of high aspect ratio structures. This enables the deposition of a high aspect ratio (>60:1) channel-pore interlayer dielectric layer (SiO2). During the transport of reactive oxygen atoms, gas-phase reactions occur (recombining reactive oxygen atoms into O2 molecules). RPO devices typically operate at low pressure (0.1~10 Torr) (low pressure significantly increases the mean free path of gas molecules) to reduce interatomic collisions and thus reduce the recombination of reactive oxygen atoms. Simultaneously, materials with low recombination coefficients are used to construct the reaction chamber to further reduce reactive oxygen atom recombination, thereby improving the utilization rate of reactive oxygen atoms.

[0003] The existing chamber structure membrane thickness is as follows Figure 1 As shown, under different power conditions, the film thickness at the wafer edge is lower than that in the central region, exhibiting an "inverted bowl shape." This is because reactive oxygen atoms recombine inside the cavity, resulting in a lower concentration of reactive oxygen atoms at the wafer edge compared to the central region. This causes the oxide film thickness at the edge to be lower than that in the central region. Furthermore, the smaller contact area of ​​the cavity hinders heat dissipation. During the initial processing of the wafer inside the cavity, the edge temperature is higher than the central region temperature, leading to uneven heating of the wafer and consequently, uneven film thickness. Summary of the Invention

[0004] Based on the technical problems existing in the prior art, the present invention provides a cavity structure for a remote plasma oxidation device and a method for using it.

[0005] According to a first aspect of the technical solution of the present invention, a cavity structure for a remote plasma oxidation device is provided, comprising a recessed cavity, the inner wall of the cavity being coated with a coating having an oxygen atom recombination coefficient less than a first threshold, a plasma inlet and a transfer port being provided on the side wall of the cavity, a metal ring being fixed above the bottom surface of the cavity, a quartz ring being provided above the metal ring, and a first cooling assembly being provided inside the cavity.

[0006] A further improvement of the present invention is that the coating with an oxygen atom recombination coefficient less than a first threshold is an annular quartz wall.

[0007] A further improvement of the present invention is that a SiC support ring is fixedly provided on the inner side of the quartz ring.

[0008] A further improvement of the present invention is that the first cooling component is a plurality of annular water-cooled pipes disposed in the cavity, and the plurality of annular water-cooled pipes are evenly disposed in the cavity above and below the plate transfer port.

[0009] A further improvement of the present invention is that a transfer channel is provided on the outer side of the transfer port, and an exhaust port is provided on the side wall of the transfer channel.

[0010] A further improvement of the present invention is that a quartz support ring is fixedly provided on the inner side of the metal ring.

[0011] A further improvement of the present invention is that a quartz channel is provided on the outside of the plasma inlet, and the quartz channel is used to connect the plasma inlet and the plasma source.

[0012] A further improvement of the present invention is that the quartz channel is provided with a quartz tube, a quartz reducer, a lower quartz component and an upper quartz component connected in sequence from the outside to the inside.

[0013] A further improvement of the present invention is that a lower cavity is provided below the cavity, the lower cavity is a tubular structure, the lower cavity is fixedly connected to the bottom surface of the cavity, and a second cooling component is provided in the side wall and the top surface of the lower cavity.

[0014] According to a second aspect of the present invention, a method for using a cavity structure for a remote plasma oxidation device is provided, which utilizes the aforementioned cavity structure for a remote plasma oxidation device, comprising the following steps: Step S1: Place the wafer above the quartz ring inside the cavity through the wafer transfer port; Step S2: Oxygen free radicals are introduced through the plasma inlet, and after reacting with the wafer, they are discharged from the wafer transfer port. In step S3, the temperature of the metal ring is reduced by the first cooling component during the reaction until the reaction is completed.

[0015] Compared with the prior art, the above-mentioned technical solution of the present invention has the following beneficial technical effects: 1. This invention reduces plasma transport losses and improves the utilization rate of active oxygen atoms by setting a coating with an oxygen atom recombination coefficient less than a first threshold in the cavity. By adding a metal ring on the bottom surface of the cavity, the heat dissipation rate of the bottom quartz ring is improved, thereby improving the wafer temperature uniformity during wafer processing and contributing to improving wafer film thickness uniformity.

[0016] 2. The present invention provides radial heat dissipation from the edge by setting a SiC support ring, and the SiC support ring has a high elastic modulus, which can bear mechanical loads and prevent the quartz ring from breaking under its own weight.

[0017] 3. The present invention avoids direct contact between the inner wall of the metal ring and oxygen free radicals by using the quartz support ring, thereby avoiding plasma loss and improving the utilization rate of active oxygen atoms.

[0018] 4. The present invention provides a cooling effect by setting the annular water-cooling pipes above and below the transfer port.

[0019] 5. This invention reduces circumferential stress cracks in the pipe structure by setting upper and lower quartz components, thereby improving service life and facilitating the processing of oblique channels. By setting quartz diameter variations, the flow channel cross-section is reduced to avoid abrupt eddies, thereby reducing oxygen free radical recombination losses. Attached Figure Description

[0020] The accompanying drawings are provided to better understand the invention and are not intended to unduly limit the scope of the invention. Wherein: Figure 1 This is a film thickness map at different radial positions on the wafer surface under different power conditions (THK represents film thickness). Figure 2 This is a cross-sectional view of a cavity structure for a remote plasma oxidation device according to the present invention; Figure 3 This is a partially enlarged view of the cavity structure of a remote plasma oxidation device according to the present invention; Figure 4 This is an overall schematic diagram of the cavity structure of a remote plasma oxidation device according to the present invention; Figure 5 This is a top view of the cavity structure of a remote plasma oxidation device according to the present invention.

[0021] Explanation of reference numerals in the attached drawings: 1. Quartz cylinder; 2. Connecting flange; 3. Quartz reducer; 4. Lower quartz component; 5. Upper quartz component; 6. Annular quartz wall; 7. Quartz ring; 8. Metal ring; 9. Quartz support ring; 10. SiC support ring; 11. Wafer; 12. Quartz plate; 13. Lower cavity; 14. Cavity; 15. Wafer transfer port; 16. Exhaust port; 17. First cooling assembly; 18. Second cooling assembly. Detailed Implementation

[0022] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of the present invention, including various details to aid understanding. These details should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the invention. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0023] Example 1 like Figure 2-5 As shown, the present invention provides a cavity structure for a remote plasma oxidation device, which includes a cavity 14, a quartz plate 12, a metal ring 8, a quartz ring 7, and a first cooling assembly 17. The cavity 14 is a plate-shaped structure with a central depression. The inner wall of the cavity 14 is coated with a film with an oxygen atom recombination coefficient less than a first threshold. The side wall of the cavity 14 is provided with a plasma inlet and a plate transfer port 15. The metal ring 8 is fixedly disposed above the bottom surface of the cavity 14, and the quartz ring 7 is disposed above the metal ring 8. The first cooling assembly 17 is disposed inside the bottom surface of the cavity 14. The cavity 14 includes a plate-shaped base and a recessed chamber disposed at the center of the plate-shaped base. The inner wall of the recessed chamber is coated with a film with an oxygen atom recombination coefficient less than a first threshold. The side wall of the recessed chamber 16 is provided with a plasma inlet and a transfer port 15. The bottom of the recessed chamber is the bottom surface. The plasma inlet is provided with a plasma channel extending outward in the horizontal direction. The plasma channel is used to install a quartz channel. Both the transfer port 15 and the plasma inlet are arc-shaped openings with a vertical height. The curvature of the arc-shaped opening is the same as the curvature of the inner wall of the recessed chamber. The chamber 14 is used to place the wafer 11 and provide a reaction environment for the wafer 11. The plasma inlet is used to introduce oxygen free radicals required for the reaction of the wafer 11 into the chamber 14. The wafer transfer port 15 is used to place the wafer 11 into the chamber 14 and discharge the gas after the reaction. The quartz ring 7 is used to place the wafer 11. The first cooling component is used to cool the quartz ring 7 and the metal ring 8. The metal ring 8 is used to accelerate the cooling rate of the wafer edge, thereby avoiding the problem of uneven temperature between the edge and center of the wafer 11 caused by heat accumulation in the quartz ring 7, which would affect the uniformity of the film thickness. The inner wall of the chamber 14 is coated with an oxygen atom recombination coefficient less than a first threshold to reduce the problem of low film thickness at the edge of the wafer 11 caused by active oxygen atom recombination on the inner wall of the chamber 14. The first threshold is preferably the oxygen atom recombination coefficient of quartz. By setting an arc-shaped plasma inlet, oxygen free radicals are uniformly introduced, improving the utilization rate of oxygen free radicals. The width of the transfer port 15 is greater than the diameter of the wafer 11. By setting an arc-shaped transfer port 15 and limiting the width of the transfer port 15, it is easier for the circular wafer 11 to enter the cavity 14. During use, the wafer 11 is first placed above the quartz ring 7 in the cavity 14 through the transfer port 15; then the plasma inlet is opened to introduce oxygen free radicals. After the oxygen free radicals react with the wafer 11, they are discharged from the transfer port 15. During the reaction, the temperature of the metal ring 8 is reduced by the first cooling component 17, thereby reducing the temperature of the quartz ring 7 and the edge of the wafer 11 until the reaction ends.

[0024] Specifically, the metal ring 8 and the quartz ring 7 form a surface contact, which can quickly conduct the heat accumulated in the quartz ring 7 laterally, avoiding the heat from staying at the edge of the wafer 11; its heat conduction path extends directly to the bottom plate of the cavity 14, so that the heat is continuously carried away without passing through the central area of ​​the wafer 11, thereby naturally reducing the temperature difference between the edge and the center of the wafer 11, and indirectly improving the film thickness uniformity.

[0025] Specifically, the plate-shaped base of the cavity 14 is a cuboid, and the four sides of the plate-shaped base are chamfered to avoid serious collisions with other semiconductor devices.

[0026] Specifically, the wafer transfer port 15 and the plasma inlet are symmetrical about the center of the recessed area of ​​the cavity 14. A wafer transfer channel is provided on the outer side of the wafer transfer port 15 up to the side wall of the cavity 14. The wafer transfer channel is used to send the wafer 11 in from the outside or take the wafer 11 out from the cavity 14. A sealing plate is provided on the outer side of the wafer transfer channel. The sealing plate is slidably connected to the outer side wall of the cavity 14. The opening and closing of the wafer transfer channel is controlled by sliding the sealing plate.

[0027] Specifically, a quartz plate 12 is provided on the top of the cavity 14. The quartz plate 12 is used to seal the recessed chamber of the cavity 14, thereby providing a sealed reaction environment for the wafer 11. Furthermore, since the quartz plate 12 is made of quartz material, it is not easily reacted with oxygen free radicals, thereby reducing plasma loss and improving the utilization rate of reactive oxygen atoms.

[0028] Specifically, such as Figure 2 As shown, the coating with an oxygen atom recombination coefficient less than the first threshold is an annular quartz wall 6. The sidewall of the annular quartz wall 6 has an opening that matches the plasma inlet and the transfer port 15. The annular quartz wall 6 and the coating with an oxygen atom recombination coefficient less than the first threshold have the same function: both can effectively reduce plasma loss and improve the utilization rate of active oxygen atoms.

[0029] Specifically, a SiC support ring 10 is fixedly provided on the inner side of the quartz ring 7. By setting the SiC support ring 10, the heat at the edge is radially discharged, and the SiC support ring 10 has a high elastic modulus, which can bear mechanical loads and prevent the quartz ring 7 from breaking under its own weight.

[0030] Specifically, the SiC support ring 10 acts as both a thermal bridge and a force bridge. Compared to the high thermal conductivity of the quartz ring 7, the SiC support ring 10 rapidly disperses the local hot spots of the quartz ring 7 radially to the metal ring 8. The high elastic modulus provides reverse support when the quartz ring 7 expands due to heat, reducing the risk of sagging or cracking caused by the weight of the quartz ring and thermal stress, keeping the wafer 11 always on the same horizontal plane, and avoiding the difference in residence time of the reactive gas at the edge and center due to tilt.

[0031] Specifically, a quartz support ring 9 is fixedly provided on the inner side of the metal ring 8. The quartz support ring 9 prevents the inner wall of the metal ring 8 from directly contacting oxygen free radicals, thereby avoiding plasma loss and improving the utilization rate of active oxygen atoms.

[0032] Specifically, the quartz support ring 9 forms a continuous quartz shielding layer inside the metal ring 8, blocking the path of oxygen free radicals directly contacting the metal surface and eliminating the loss of active oxygen caused by the high recombination coefficient of the metal surface; at the same time, its thermal resistance is slightly higher than that of the metal, which can form a gradient cooling, making the temperature drop process at the edge of the wafer 11 more gradual and preventing thermal stress ring marks caused by sudden cooling.

[0033] Specifically, the first cooling component 17 is an annular water-cooled pipe disposed in the bottom surface of the cavity 14, and the first cooling component 17 is located below the metal ring 8.

[0034] Specifically, such as Figure 2 As shown, there are two annular water-cooled pipes, each arranged on the same horizontal plane. One annular water-cooled pipe is located above the transfer port 15, and the other is located below the transfer port 15. Both annular water-cooled pipes surround the recessed cavity and are located within the plate-shaped base of the cavity 14. Cooling is thus provided through these two annular water-cooled pipes.

[0035] Specifically, the annular water-cooling pipe is embedded in the upper and lower layers of the cavity 14 to form an upper and lower clamping cooling of the metal ring 8: the heat conducted upward is absorbed in real time by the upper annular water-cooling pipe, and the heat conducted downward is absorbed in real time by the lower annular water-cooling pipe, carrying away heat in both directions and avoiding the temperature gradient caused by one-sided cooling from penetrating back into the wafer; the two annular water-cooling pipes are arranged above and below the wafer transfer port 15, which can also cool the sealed area of ​​the inlet and outlet channel, reduce local air leakage caused by thermal deformation of the seal, and maintain the stability of the low-pressure process environment.

[0036] Specifically, a transfer channel is provided on the outer side of the transfer port 15, and an exhaust port 16 is provided on the side wall of the transfer channel. The number of exhaust ports is not limited, and they are evenly distributed on both sides of the transfer channel according to the actual situation. The gas in the reaction chamber 14 is discharged through the exhaust ports.

[0037] Specifically, a quartz channel is provided on the outer side of the plasma inlet, which connects the plasma inlet and the plasma source. From the outside to the inside, the quartz channel is provided with a connected quartz cylinder 1, a quartz reducer 3, a lower quartz component 4, and an upper quartz component 5. For example... Figure 2-3As shown, the plasma inlet is connected to the upper quartz component 5. The contact surfaces of the upper quartz component 5 and the lower quartz component 4 are both sloped, and inlets and outlets are formed on the slopes. The upper quartz component 5 and the lower quartz component 4, when combined, form a cuboid. The end face of the lower quartz component 4 away from the upper quartz component 5 is connected to the outlet of the quartz reducer 3. The quartz reducer 3 has a conical structure; the inner diameter of the end closer to the lower quartz component 4 is smaller than the inner diameter of the end farther from the lower quartz component 4. The end of the quartz reducer 3 away from the lower quartz component 4 is connected to the quartz cylinder 1. The other end of the cylinder 1 is connected to the plasma source. The left and right positions of the lower quartz component 4 and the upper quartz component 5 are interchangeable and are not limited to the up-down or left-right relationship in this embodiment. As long as the upper quartz component 5 and the lower quartz component 4 are combined into a plate-like structure and can achieve communication between the quartz variable diameter 3 and the plasma inlet, it is acceptable. The quartz variable diameter 3, the lower quartz component 4, and the upper quartz component 5 are all disposed inside the side wall of the cavity 14, and part of the quartz cylinder 1 is also inside the cavity 14, thereby improving the sealing performance. The cavity 14 and the quartz cylinder 1 are fixedly connected by a connecting flange 2. By setting the upper quartz component 5 and the lower quartz component 4, the circumferential stress cracks of the pipeline structure are reduced, the service life is improved, and the oblique channel is easier to process. By setting the quartz variable diameter 3, the flow channel cross-section is reduced to avoid abrupt eddies, thereby reducing oxygen free radical recombination losses.

[0038] Specifically, the combination of quartz tube 1, quartz reducer 3, lower quartz component 4, upper quartz component 5, annular quartz wall 6, quartz ring 7, SiC support ring 10, and quartz plate 12 effectively isolates active oxygen atoms from contact with the cavity 14, preventing recombination caused by contact with metal surfaces. The oxygen atom recombination coefficient on the surface of quartz material is much lower than that on stainless steel surface. The annular quartz wall 6, made of quartz material, attached to the inner side of the cavity effectively reduces the recombination effect of the cavity wall on active oxygen atoms. This increases the concentration of active oxygen atoms at the wafer edge, thereby increasing the edge film thickness and improving the overall uniformity of the wafer film thickness. The oxygen atom recombination coefficient on the inner wall of the quartz channel remains consistent, eliminating the step loss of active oxygen due to material differences. The segmented quartz component design of the upper quartz component 5 and lower quartz component 4 allows for individual replacement when local particulate contamination occurs, avoiding the scrapping of the entire channel, improving maintenance efficiency and reducing downtime.

[0039] Specifically, a lower cavity 13 is provided below the cavity 14. The lower cavity 13 is a tubular structure and is fixedly connected to the bottom surface of the cavity 14. A second cooling assembly 18 is provided in both the side wall and the top surface of the lower cavity 13. The second cooling assembly 18 includes two annular cooling water channels, one of which is located in the upper half of the side wall of the lower cavity 13 and the other is located in the top surface of the lower cavity 13. The side wall of the lower cavity 13 is located below the metal ring 8. The annular cooling water channel inside is used to assist the metal ring 8 in cooling down. The annular cooling water in the top surface of the lower cavity 13 is located below the wafer 11 and is used to cool the area between the edge and the center of the wafer 11, thereby making the temperature of the wafer 11 uniform and finally obtaining a uniform film thickness.

[0040] Specifically, the sidewall channels and top channel of the lower cavity 13 form an L-shaped heat trap: the sidewall channels mainly absorb the longitudinal heat flow from the metal ring 8, and the top channel mainly absorbs the heat radiated from the back of the wafer to the bottom of the cavity. The heat from both channels is carried away in one go within the lower cavity 13, avoiding the heat being reflected back to the wafer 11 at the bottom of the cavity, thus achieving a three-level thermal balance from the edge to the middle to the bottom, and further flattening the temperature curve of the wafer 11.

[0041] Example 2 A method of using a cavity structure for a remote plasma oxidation device, based on a cavity structure for a remote plasma oxidation device in Embodiment 1, includes the following steps: Step S1: Place the wafer 11 above the quartz ring 7 inside the cavity 14 through the wafer transfer port 15; Step S2: Oxygen free radicals are introduced through the plasma inlet, and after reacting with the wafer 11, they are discharged from the wafer transfer port 15. In step S3, the temperature of the metal ring 8 is reduced by the first cooling component 17 during the reaction until the reaction is completed.

[0042] Specifically, the oxygen free radicals flow out from the plasma source, sequentially through the quartz cylinder 1 → quartz reducer 3 → lower quartz element 4 → upper quartz element 5 → annular quartz wall 6 and plasma channel into the cavity 14, reaching the surface of the wafer 11 for reaction. After the reaction, they are discharged through the annular quartz wall 6 → wafer transfer port 15 → exhaust port 16.

[0043] Specifically, the metal ring 8 is bonded to the bottom of the cavity 14. During the process, cooling water is continuously circulated into the annular water-cooling pipe of the first cooling assembly 17 to cool the metal ring 8. The quartz ring 7 is bonded to the metal ring 8, and through heat conduction, the quartz ring 7 is kept at a lower temperature. This indirectly affects the edge temperature of the wafer 11 during the process, reducing the temperature difference between the edge and the center region of the wafer 11, thereby improving the film thickness uniformity.

[0044] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0045] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can occur depending on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A cavity structure for a remote plasma oxidation device, characterized in that, Includes a cavity (14), a quartz plate (12), a metal ring (8), a quartz ring (7), a first cooling assembly (17), a quartz support ring (9), a SiC support ring (10), a lower cavity (13), and a second cooling assembly (18); The inner wall of the cavity (14) is coated with a film with an oxygen atom recombination coefficient less than a first threshold. The side wall of the cavity (14) is provided with a plasma inlet and a wafer transfer port (15). A metal ring (8) is fixed above the bottom surface of the cavity (14). A quartz ring (7) is provided above the metal ring (8). The metal ring (8) and the quartz ring (7) form a surface contact. A SiC support ring (10) is fixed inside the quartz ring (7). The quartz ring (7) is used to place the wafer (11). A quartz support ring (9) is fixed inside the metal ring (8). The cavity (14) is provided with a first cooling component (17), which is an annular water-cooled pipe disposed in the bottom surface of the cavity (14); the cavity (14) includes a plate-shaped base and a recessed chamber disposed in the center of the plate-shaped base, and a quartz plate (12) is provided on the top of the cavity (14), which is used to seal the recessed chamber of the cavity (14); there are two annular water-cooled pipes, each of which is disposed on the same horizontal plane, one annular water-cooled pipe is disposed above the transfer port (15), and the other annular water-cooled pipe is disposed below the transfer port (15), and both annular water-cooled pipes are disposed around the recessed chamber; Below the cavity (14) is a lower cavity (13), which is a tubular structure. The lower cavity (13) is fixedly connected to the bottom surface of the cavity (14). The side wall and top surface of the lower cavity (13) are provided with a second cooling assembly (18). The second cooling assembly (18) includes two annular cooling water channels, one of which is located in the upper half of the side wall of the lower cavity (13), and the other is located in the top surface of the lower cavity (13). The side wall of the lower cavity (13) is located below the metal ring (8). The annular cooling water channel inside is used to assist the metal ring (8) in cooling down. The annular cooling water in the top surface of the lower cavity (13) is located below the wafer (11).

2. The cavity structure for a remote plasma oxidation device according to claim 1, characterized in that, The coating with an oxygen atom recombination coefficient less than the first threshold is an annular quartz wall (6).

3. The cavity structure for a remote plasma oxidation device according to claim 1, characterized in that, The outer side of the transfer port (15) is provided with a transfer channel, and an exhaust port (16) is provided on the side wall of the transfer channel.

4. The cavity structure for a remote plasma oxidation device according to claim 1, characterized in that, A quartz channel is provided on the outside of the plasma inlet, which is used to connect the plasma inlet and the plasma source.

5. The cavity structure for a remote plasma oxidation device according to claim 4, characterized in that, The quartz channel is provided with a quartz tube (1), a quartz reducer (3), a lower quartz component (4), and an upper quartz component (5) connected from the outside to the inside.

6. A method of using a cavity structure for a remote plasma oxidation device, based on a cavity structure for a remote plasma oxidation device according to any one of claims 1-5, characterized in that, Includes the following steps: Step S1: Place the wafer (11) above the quartz ring (7) inside the cavity (14) from the wafer transfer port (15); Step S2: Oxygen free radicals are introduced through the plasma inlet. After reacting with the wafer (11), the oxygen free radicals are discharged from the wafer transfer port (15). In step S3, the temperature of the metal ring (8) is reduced by the first cooling component (17) during the reaction until the reaction ends.

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