Method and apparatus for thermally treating substrate

By setting up a heat-affected zone between the base and the temperature control unit, and by periodically changing the thermal conductivity of the medium and controlling the airflow, the problem of local temperature differences in the base was solved, and the uniformity of the temperature curve on the substrate support and the uniformity of heat treatment were achieved.

CN121344570APending Publication Date: 2026-01-16AIXTRON AG
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Patent Information

Application Number
CN202511448296.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2019-02-21
Filing Date
2020-02-10
Publication Date
2026-01-16

AI Technical Summary

Technical Problem

In existing technologies, local temperature differences in the base are difficult to compensate effectively, resulting in uneven temperature profiles of the substrate.

Method used

By setting up a heat-affected zone between the base and the temperature control unit, and utilizing the periodic changes in the thermal conductivity of the medium, combined with airflow control, the localized restricted input or discharge of heat is achieved, synchronized with the rotational movement of the base, ensuring uniform heat distribution in specific areas.

Benefits of technology

It effectively compensates for local temperature differences in the base, achieves uniformity of temperature curves on the substrate support, and improves the uniformity and efficiency of heat treatment.

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Abstract

The invention relates to a method for the heat treatment of substrates, in which a susceptor (5) carries at least one substrate, is heated by a heating device (13), and is driven in rotation about an axis of rotation (A), characterized in that heat is conducted out of the susceptor (5) synchronously with the rotation of the susceptor (5) at a heat-affected zone (17) that is stationary relative to a housing (1). The invention further relates to a device for heat-treating a substrate.
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Citation Information

Patent Citations

  • Chemical vapor deposition reactor for production of semiconductor devices has encapsulated electrical resistance heater

    DE102005056536A1

  • CVD-Reactor

    DE102009043960A1

  • CVD reactor with substrate holder resting on a gas cushion with multiple zones

    DE102009044276A1

  • Method and apparatus for determining the deformation of a substrate

    DE102011053498A1

  • CVD reactor or substrate holder for a CVD reactor

    DE102011055061A1