Preparation and application of anti-static wafer carrying friction pad material
By combining modified graphene and antistatic agents with methyl silicone rubber, a conductive path is constructed, which solves the static electricity problem in the wafer handling process, improves antistatic and flame retardant properties, and ensures the stability and safety of the semiconductor manufacturing process.
Patent Information
- Application Number
- CN202511834440.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-08
- Publication Date
- 2026-01-20
AI Technical Summary
Existing phenyl silicone rubber gaskets have static electricity issues during wafer handling, affecting production stability and safety.
Modified graphene and antistatic agents are combined with methyl silicone rubber to quickly dissipate static electricity by constructing conductive pathways, and antioxidants are added to improve flame retardant properties.
It effectively avoids dust contamination caused by electrostatic adsorption, prevents electrostatic breakdown of wafer surface circuits, reduces wafer scrap rate, reduces fire risk, and meets the requirements of a high-safety manufacturing environment.
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Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of high polymer materials, in particular to a preparation and application of an anti-static wafer carrying friction pad material. BACKGROUND
[0002] Wafer grabbing manipulator is one of the key transfer equipment in semiconductor manufacturing process, which is responsible for accurately carrying and positioning wafers in a clean room environment. Wafers are very fragile and valuable, so high precision and stability are required during the carrying process to avoid any possible damage or contamination. Anti-slip gecko foot pad is a special component, which is usually installed on the contact point of the manipulator to enhance the friction between the manipulator and the wafer, ensuring that the wafer will not slip or shift during the carrying process. It is an indispensable part of wafer grabbing manipulator equipment. Without these pads, the wafer grabbing manipulator will not work properly, but during the work process, static electricity is easy to produce. The existing phenyl silicone rubber pad, as the core manufacturing material in wafer transfer equipment, its performance directly affects the stability and efficiency of the entire production process. The development of domestic substitutes not only realizes breakthroughs in physical properties such as high temperature resistance and corrosion resistance, but also meets industry requirements in physical protection, static protection and vibration protection. SUMMARY
[0003] (I) Technical problems solved In view of the shortcomings of the prior art, the present application provides a preparation and application of an anti-static wafer carrying friction pad material, which has good anti-static and flame-retardant effects.
[0004] (II) Technical solutions To achieve the above-mentioned purpose, the present application provides the following technical solutions: an anti-static wafer carrying friction pad material, characterized in that it comprises the following weight components: 60-70 parts by weight of methyl silicone rubber, 2-3 parts by weight of modified graphene, 1-3 parts by weight of anti-static agent, and 0.3-0.5 parts by weight of antioxidant 1010.
[0005] Further, the preparation method of the modified graphene is as follows: 8-10 g of (3-aminopropyl) triethoxysilane is added to 20-25 mL of graphene oxide ethanol dispersion solution with a concentration of 0.24-0.25 g / mL, and stirred at 55-60℃ for 10-12 h, then washed to obtain modified graphene oxide.
[0006] Further, the preparation method of the anti-static agent is as follows: S1. 4.1-4.3 g of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 20-30 mL of diethylene glycol dimethyl ether were added to the reactor, heated to 75-80 DEG C, stirred and dissolved to obtain solution A; 2.5-2.7 g of vinyl trimethoxysilane, 0.63-0.79 g of methyl vinyl dimethoxysilane, 0.02-0.03 g of azobisisobutyronitrile were dissolved in 10-15 mL of diethylene glycol dimethyl ether, stirred and dissolved to obtain solution B; solution B was added dropwise to solution A, and the temperature was raised to 76-80 DEG C for 20-24 h, after the reaction was completed, washed with cyclohexane, filtered to remove the solvent, and dried to obtain intermediate 1; S2. Under nitrogen protection, intermediate 1, 4-aminobenzoic acid and 3% mass fraction HCl aqueous solution were added to the reactor containing diethylene glycol dimethyl ether solvent, heated to 60-65 DEG C and stirred for 1-1.5 h, then the temperature was raised and reacted for 4-5 h, after the reaction was completed, washed with cyclohexane and dried to obtain intermediate 2; S3. 5-8 mmol of (3-isocyanate propyl) dimethylamine was added to 45-55 mL of N,N-dimethylformamide solvent, and 6-8.2 mmol of intermediate 2 was added, and the reaction was carried out at 65-70 DEG C, after the reaction, the solvent was filtered and dried to obtain a tertiary amine-based silane; S4. Tertiary amine-based silane, 2-bromoethanol were added to N,N-dimethylformamide solvent, stirred and mixed, reacted at 60-65 DEG C for 3-5 h, after the reaction was completed, distilled under reduced pressure, filtered and dried to obtain an antistatic agent.
[0007] Further, in S2, the amount ratio of intermediate 1, 4-aminobenzoic acid, HCl aqueous solution is 9-12 mmol:7-7.3 mmol:0.3-0.5 mL.
[0008] Further, in S2, the temperature of the temperature rise is 130-150 DEG C.
[0009] Further, in S3, the reaction time is 12-16 h.
[0010] Further, in S4, the amount ratio of N,N-dimethylformamide, tertiary amine-based silane, 2-bromoethanol is 40-50 mL:4.5-6 mmol:4.8-6 mmol.
[0011] Further, the preparation method of the antistatic wafer carrying friction pad material is as follows: methyl silicone rubber, modified graphene, antistatic agent, antioxidant 1010 are added to a high-speed mixer, mixed at a speed of 1000-1200 r / min for 30-40 min to make the components uniformly dispersed, then added to a mold, and molded at a molding temperature of 100-110 DEG C for 20-30 min to obtain the antistatic wafer carrying friction pad material.
[0012] Further, the application is applied in wafer transportation.
[0013] (Three) beneficial technical effects The application builds efficient conductive paths through the synergistic effect of modified graphene and antistatic agent, can quickly dredge static electricity generated by friction, can effectively avoid static adsorption of dust to contaminate wafers, can prevent static electricity from breaking sensitive circuits on the wafer surface, can significantly reduce the wafer rejection rate caused by static electricity, and can protect the stability of the semiconductor manufacturing process; the quaternary ammonium salt group in the antistatic agent also has good antistatic effect. The graphene oxide in the modified graphene and the silicon element, the phosphorus element and the boron element in the antistatic agent have good flame-retardant effect, and the material has excellent flame-retardant performance, which can effectively reduce the fire risk in the semiconductor dust-free workshop and meet the requirements of high safety level manufacturing environment. DETAILED DESCRIPTION
[0014] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.
[0015] In order to better understand the above technical scheme, the above technical scheme will be described in detail below in combination with specific embodiments.
[0016] The graphene oxide aqueous solution (mass fraction 1%, average flake diameter greater than or equal to 5 microns) is purchased from Shenzhen Encai Technology Co., Ltd. The graphene oxide aqueous solution (mass fraction 1%, average flake diameter greater than or equal to 5 microns) is purchased from Shenzhen Encai Technology Co., Ltd. Embodiment 1 S1. 4.1g of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 20mL of diethylene glycol dimethyl ether were added into a reactor, heated to 75℃, stirred and dissolved to obtain solution A; 2.5g of vinyltrimethoxysilane, 0.6g of methylvinyl dimethoxysilane, 0.02g of azobisisobutyronitrile were dissolved in 10mL of diethylene glycol dimethyl ether, stirred and dissolved to obtain solution B; solution B was added dropwise into solution A, heated to 76℃ and reacted for 20h, then washed with cyclohexane, filtered to remove the solvent, and dried to obtain intermediate 1; S2. Under the protection of nitrogen, 9mmol of intermediate 1, 7mmol of 4-aminobenzoic acid and 0.3mL of 3% mass fraction HCl aqueous solution were added into a reactor containing diethylene glycol dimethyl ether solvent, heated to 60℃ and stirred for 1h, then heated to 130℃ and reacted for 4h, then washed with cyclohexane and dried to obtain intermediate 2; S3. 5 mmol of (3-isocyanate propyl) dimethylamine is added to 45 mL of N,N- dimethylformamide solvent, and 6 mmol of intermediate 2 is added, and reacted at 65°C for 12 h, after the reaction, the solvent is filtered and dried to obtain a tertiary amine-based silane; S4. 4.5 mmol of tertiary amine-based silane, 4.8 mmol of 2-bromoethanol are added to 40 mL of N,N-dimethylformamide solvent, the mixture is stirred and reacted at 60°C for 3 h, after the end, it is distilled under reduced pressure, filtered and dried to obtain an antistatic agent; S5. 8 g of (3-aminopropyl) triethoxysilane is added to 20 mL of graphene oxide ethanol dispersion with a concentration of 0.24 g / mL, and stirred and reacted at 55°C for 10 h, and washed to obtain modified graphene oxide; S6. 60 parts by weight of methyl silicone rubber, 2 parts by weight of modified graphene, 1 part by weight of antistatic agent, and 0.3 parts by weight of antioxidant 1010 are added to a high-speed mixer, mixed at a speed of 1000 r / min for 30 min to uniformly disperse the components, then added to a mold, and molded at a molding temperature of 100°C for 20 min to obtain an antistatic wafer handling friction pad material.
[0017] Example 2 S1. 4.3 g of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 30 mL of diethylene glycol dimethyl ether are added to a reactor, heated to 80°C, and stirred to dissolve to obtain solution A; 2.7 g of vinyltrimethoxysilane, 0.79 g of methyl vinyl dimethoxysilane, and 0.03 g of azobisisobutyronitrile are dissolved in 15 mL of diethylene glycol dimethyl ether, and stirred to dissolve to obtain solution B; solution B is added dropwise to solution A, and heated to 80°C to react for 24 h, after which it is washed with cyclohexane, filtered to remove the solvent, and dried to obtain intermediate 1; S2. Under nitrogen protection, 12 mmol of intermediate 1, 7.3 mmol of 4- aminobenzenboronic acid, and 0.5 mL of 3% mass fraction HCl aqueous solution are added to a reactor containing diethylene glycol dimethyl ether solvent, heated to 65°C and stirred for 1.5 h, then heated to 150°C and reacted for 5 h, after which it is washed with cyclohexane and dried to obtain intermediate 2; S3. 8 mmol of (3-isocyanate propyl) dimethylamine is added to 55 mL of N,N- dimethylformamide solvent, and 8.2 mmol of intermediate 2 is added, and reacted at 70°C for 16 h, after the reaction, the solvent is filtered and dried to obtain a tertiary amine-based silane; S4. To 50 mL of N,N-dimethylformamide solvent, 6 mmol of tertiary amine silane, 6 mmol of 2-bromoethanol, the mixture is stirred, reacted at 65°C for 5h, after the end of the distillation under reduced pressure, filtration, drying, to obtain the antistatic agent; S5. In 5 mL of graphene oxide ethanol dispersion solution with a concentration of 0.25 g / mL, 10 g of (3-aminopropyl)triethoxysilane is added, stirred and reacted at 60°C for 12h, washed to obtain modified graphene oxide; S6. 70 parts by weight of methyl silicone rubber, 3 parts by weight of modified graphene, 3 parts by weight of antistatic agent, 0.5 parts by weight of antioxidant 1010 are added to a high-speed mixer, mixed at a speed of 1200r / min for 40min to make the components uniformly dispersed, then added to a mold, and molded at a temperature of 110°C for 20-30min to obtain an antistatic wafer handling friction pad material.
[0018] Example 3 S1. 4.3 g of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 30 mL of diethylene glycol dimethyl ether is added to the reactor, heated to 80°C, stirred and dissolved to obtain solution A; 2.7 g of vinyltrimethoxysilane, 0.79 g of methyl vinyl dimethoxysilane, 0.03 g of azobisisobutyronitrile is dissolved in 15 mL of diethylene glycol dimethyl ether, stirred and dissolved to obtain solution B; solution B is added to solution A, heated to 80°C and reacted for 24h, after which it is washed with cyclohexane, filtered to remove the solvent, and dried to obtain intermediate 1; S2. Under nitrogen protection, 12 mmol of intermediate 1, 7.3 mmol of 4-aminobenzoic acid and 0.5 mL of 3% mass fraction HCl aqueous solution are added to the reactor containing diethylene glycol dimethyl ether solvent, heated to 65°C and stirred for 1.5h, then heated to 150°C and reacted for 5h, after which it is washed with cyclohexane and dried to obtain intermediate 2; S3. 8 mmol of (3-isocyanate propyl)dimethylamine is added to 55 mL of N,N-dimethylformamide solvent, and 8.2 mmol of intermediate 2 is added, reacted at 70°C for 16h, after which the solvent is filtered and dried to obtain tertiary amine silane; S4. To 50 mL of N,N-dimethylformamide solvent, 6 mmol of tertiary amine silane, 6 mmol of 2-bromoethanol, the mixture is stirred, reacted at 65°C for 5h, after the end of the distillation under reduced pressure, filtration, drying, to obtain the antistatic agent; S5. In 25 mL of graphene oxide ethanol dispersion solution with a concentration of 0.25 g / mL, 10 g of (3-aminopropyl)triethoxysilane is added, stirred and reacted at 60°C for 12h, washed to obtain modified graphene oxide; S6. 70 parts by weight of methyl silicone rubber, 3 parts by weight of modified graphene, 3 parts by weight of antistatic agent, and 0.5 parts by weight of antioxidant 1010 were added to a high-speed mixer, mixed at a rotation speed of 1200 r / min for 40 min to uniformly disperse the components, and then added to a mold to be molded at a molding temperature of 110°C for 30 min to obtain an antistatic wafer handling friction pad material.
[0019] Example 4 S1. 4.1 g of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, and 20 mL of diethylene glycol dimethyl ether were added to a reactor, heated to 75°C, and stirred to dissolve to obtain solution A; 2.5 g of vinyltrimethoxysilane, 0.6 g of methylvinyl dimethoxysilane, and 0.02 g of azobisisobutyronitrile were dissolved in 10 mL of diethylene glycol dimethyl ether to obtain solution B; solution B was added dropwise to solution A, and the temperature was raised to 76°C to react for 20 h; after the reaction, cyclohexane was used for washing, the solvent was removed by filtration, and drying was performed to obtain intermediate 1; S2. Under nitrogen protection, 9 mmol of intermediate 1, 7 mmol of 4- aminobenzenboronic acid, and 0.3 mL of 3% mass fraction HCl aqueous solution were added to a reactor containing diethylene glycol dimethyl ether solvent, heated to 60°C, and stirred for 1 h, and then the temperature was raised to 130°C to react for 4 h; after the reaction, cyclohexane was used for washing, and drying was performed to obtain intermediate 2; S3. 8 mmol of (3-isocyanatepropyl)dimethylamine was added to 55 mL of N,N-dimethylformamide solvent, and 8.2 mmol of intermediate 2 was added, and the reaction was performed at 70°C for 16 h; after the reaction, the solvent was filtered and dried to obtain a tertiary amine-based silane; S4. 6 mmol of the tertiary amine-based silane and 6 mmol of 2-bromoethanol were added to 50 mL of N,N-dimethylformamide solvent, mixed by stirring, and the reaction was performed at 65°C for 5 h; after the reaction, distillation was performed under reduced pressure, filtration was performed, and drying was performed to obtain an antistatic agent; S5. 10 g of (3-aminopropyl)triethoxysilane was added to 25 mL of graphene oxide ethanol dispersion with a concentration of 0.25 g / mL, and the reaction was performed by stirring at 60°C for 12 h; washing was performed to obtain modified graphene oxide; S6. 70 parts by weight of methyl silicone rubber, 3 parts by weight of modified graphene, 3 parts by weight of antistatic agent, and 0.5 parts by weight of antioxidant 1010 were added to a high-speed mixer, mixed at a rotation speed of 1200 r / min for 40 min to uniformly disperse the components, and then added to a mold to be molded at a molding temperature of 110°C for 30 min to obtain an antistatic wafer handling friction pad material.
[0020] Comparative Example 1 The comparative example is different from example 4 in that intermediate 1 is used instead of the antistatic agent.
[0021] Comparative example 2 The comparative example is different from example 4 in that graphene oxide is used instead of modified graphene oxide.
[0022] The antistatic wafer handling friction pad material uses an oxygen index tester to test the limiting oxygen index of the material, and a horizontal and vertical burning tester to test the combustion grade of the material.
[0023] Table 1: Flame retardancy and tensile strength test.
[0024]
[0025] As can be seen from Table 1, examples 1-4 of the present application have better flame retardancy than comparative examples 1-2.
[0026] According to the detection standard of ISO 61340-5-1, the surface resistance of the materials prepared in examples 1-4 and comparative examples 1-2 is tested.
[0027] Table 2: Antistatic test.
[0028]
[0029] As can be seen from Table 2, examples 1-4 of the present application have better antistatic effect than comparative examples 1-2.
[0030] It should be noted that in this document, the terms "comprise", "contain" or any other variant thereof are intended to cover non-exclusive inclusion, so that processes, methods, articles or devices that include a series of elements not only include those elements, but also include other elements not explicitly listed, or inherent to such processes, methods, articles or devices. Without more limitations, the element defined by the statement "comprises a" does not exclude the presence of additional identical elements in the process, method, article or device that includes the element.
[0031] The above examples are only used to illustrate the technical solutions of the present application, but not to limit it; although the present application has been described in detail with reference to the foregoing examples, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing examples, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.
[0032] Those skilled in the art should understand that the above only describes several specific embodiments of the present application, but not all embodiments.
Claims
1. A type of antistatic wafer handling friction pad material, characterized in that, It includes the following components by weight: 60-70 parts by weight of methyl silicone rubber, 2-3 parts by weight of modified graphene, 1-3 parts by weight of antistatic agent, and 0.3-0.5 parts by weight of antioxidant 1010.
2. The antistatic wafer handling friction pad material according to claim 1, characterized in that, The modified graphene is prepared by adding 8-10 g of (3-aminopropyl)triethoxysilane to 20-25 mL of graphene oxide ethanol dispersion with a concentration of 0.24-0.25 g / mL, stirring and reacting at 55-60 °C for 10-12 h, and washing to obtain modified graphene oxide.
3. The antistatic wafer handling friction pad material according to claim 1, characterized in that, The method for preparing the antistatic agent is as follows: S1. Add 4.1-4.3 g of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide and 20-30 mL of diethylene glycol dimethyl ether to a reactor, heat to 75-80 °C, stir to dissolve, and obtain solution A; dissolve 2.5-2.7 g of vinyltrimethoxysilane, 0.63-0.79 g of methylvinyldimethoxysilane, and 0.02-0.03 g of azobisisobutyronitrile in 10-15 mL of diethylene glycol dimethyl ether, stir to dissolve, and obtain solution B; add solution B dropwise to solution A, heat to 76-80 °C and react for 20-24 h, wash with cyclohexane, filter to remove solvent, and dry to obtain intermediate 1; S2. Under nitrogen protection, intermediate 1, 4-aminophenylboronic acid and 3% (w / w) aqueous HCl solution were added to a reactor containing diethylene glycol dimethyl ether solvent, heated to 60-65℃ and stirred for 1-1.5 h, then heated and reacted for 4-5 h. After the reaction was completed, the mixture was washed with cyclohexane and dried to obtain intermediate 2. S3. Add 5-8 mmol of (3-isocyanate propyl) dimethylamine to 45-55 mL of N,N-dimethylformamide solvent, and add 6-8.2 mmol of intermediate 2. React at 65-70 °C. After the reaction, filter the solvent and dry to obtain tertiary aminosilane. S4. Add tertiary aminosilane and 2-bromoethanol to N,N-dimethylformamide solvent, stir and mix, react at 60-65℃ for 3-5 hours, after which distill under reduced pressure, filter, and dry to obtain the antistatic agent.
4. The antistatic wafer handling friction pad material according to claim 3, characterized in that, The ratio of intermediate 1,4-aminophenylboronic acid and HCl aqueous solution in S2 is 9-12 mmol: 7-7.3 mmol: 0.3-0.5 mL.
5. The antistatic wafer handling friction pad material according to claim 3, characterized in that, The heating temperature in S2 is 130-150℃.
6. The antistatic wafer handling friction pad material according to claim 3, characterized in that, The reaction time in S3 is 12-16 hours.
7. The antistatic wafer handling friction pad material according to claim 3, characterized in that, The ratio of N,N-dimethylformamide, tertiary aminosilane, and 2-bromoethanol in S4 is 40-50 mL: 4.5-6 mmol: 4.8-6 mmol.
8. A method for preparing an antistatic wafer handling friction pad material as described in any one of claims 1-7, characterized in that, The preparation method of the antistatic wafer handling friction pad material is as follows: methyl silicone rubber, modified graphene, antistatic agent, and antioxidant 1010 are added to a high-speed mixer and mixed at a speed of 1000-1200 r / min for 30-40 min to ensure uniform dispersion of each component. Then, the mixture is added to a mold and molded. The molding temperature is 100-110℃ and the molding time is 20-30 minutes to obtain the antistatic wafer handling friction pad material.
9. A type of antistatic wafer handling friction pad material as described in any one of claims 1-8, characterized in that, The application described in wafer handling.