Method of manufacturing quantum dot core, quantum dot core manufactured thereby, quantum dot including quantum dot core, light emitting device including quantum dot, and electronic device including light emitting device

Abstract

The present application relates to a method of manufacturing a quantum dot core, a quantum dot core manufactured thereby, a quantum dot including the quantum dot core, a light emitting device including the quantum dot, and an electronic device including the light emitting device. Methods of making quantum dot cores are provided. The method includes a process (1) of forming a second gallium precursor from a first gallium precursor having a monomeric structure and a C1-C18 fatty acid, a process (2) of reacting the second gallium precursor, an indium precursor, and a zinc precursor, and a process (3) of reacting the resulting product of process (2) and a phosphorus precursor.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0095155, filed on July 18, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more aspects of embodiments of this disclosure relate to a method of manufacturing a quantum dot core, a quantum dot core thereby manufactured, a quantum dot including a quantum dot core, a light-emitting device including a quantum dot, and an electronic device including a light-emitting device. Background Technology

[0004] Quantum dots are semiconductor nanoparticles with dimensions of a few nanometers and unique optoelectronic properties due to the quantum confinement effect. Because quantum dots are easily controlled by particle size and have narrow emission linewidths, they are being actively researched as luminescent materials for next-generation display technologies. For example, there is a growing expectation or demand for quantum dots with environmentally friendly components that are harmless to humans and the environment.

[0005] Displays using quantum dots require or utilize red, green, and blue quantum dots. Among these, red and green quantum dots, with their environmentally friendly components, have been researched and developed to near commercial implementation. However, the successful development of blue quantum dots has not yet been achieved.

[0006] Blue quantum dot candidates with commercial implementation potential include zinc chalcogenide quantum dots. For example, ZnSeTe quantum dots (an alloy of zinc selenide (ZnSe) and zinc telluride (ZnTe)) each exhibit relatively high quantum efficiency and relatively narrow full width at half maximum (FWHM). However, ZnSeTe quantum dots face challenges in achieving adequate device lifetime. Summary of the Invention

[0007] One or more aspects of embodiments of this disclosure relate to a method for synthesizing quantum dot cores with high uniformity, quantum dots including quantum dot cores manufactured by the method, and an emitting layer for a light-emitting device including quantum dots.

[0008] One or more aspects of embodiments of this disclosure relate to light-emitting devices including an emitting layer and electronic devices including light-emitting devices.

[0009] Further aspects of the implementation will be set forth in part in the description which follows, and will be apparent in part from the description, or may be learned by practice of the implementations presented in this disclosure.

[0010] According to one or more embodiments, a method for manufacturing quantum dots includes:

[0011] a first gallium precursor having a monomeric structure and a C1-C 18 a process (1) of forming a second gallium precursor from a fatty acid,

[0012] a process (2) of reacting the second gallium precursor, an indium precursor, and a zinc precursor, and

[0013] a process (3) of reacting the resulting product of process (2) and a phosphorous precursor.

[0014] According to one or more embodiments,

[0015] A quantum dot core manufactured by the method is provided.

[0016] According to one or more embodiments,

[0017] The quantum dot includes a quantum dot core and a shell,

[0018] wherein the quantum dot has an In 1-x Ga x P / ZnS core / shell structure, 0 < x < 1.

[0019] According to one or more embodiments, a light emitting device includes:

[0020] a first electrode,

[0021] a second electrode facing the first electrode, and

[0022] a sandwich disposed between the first electrode and the second electrode and including an emission layer,

[0023] wherein the emission layer includes a quantum dot. BRIEF DESCRIPTION OF DRAWINGS

[0024] The accompanying drawings are included to provide a further understanding of the foregoing and other aspects, features, and advantages of certain embodiments of the present disclosure and are incorporated in and constitute a part of this specification. The exemplary embodiments, as described below, will be best understood in conjunction with the accompanying drawings. In the drawings:

[0025] Figure 1 A graph showing an ultraviolet (UV) absorption spectrum of a quantum dot core manufactured by a method of manufacturing a quantum dot core according to one or more embodiments of the present disclosure;

[0026] Figure 2 A graph showing an ultraviolet (UV) absorption spectrum of a quantum dot core manufactured by a comparable (existing) method of manufacturing a quantum dot core;

[0027] Figure 3A graph comparing gallium content of quantum dot cores according to embodiments of the present disclosure and quantum dot cores of comparative examples;

[0028] Figure 4 A graph comparing X-ray diffraction (XRD) spectra of quantum dot cores according to embodiments of the present disclosure and quantum dot cores of comparative examples;

[0029] Figure 5 A graph showing UV absorption spectra and photoluminescence (PL) spectra of quantum dots including quantum dot cores made by methods according to one or more embodiments of the present disclosure; and

[0030] Figure 6 A schematic of a light emitting device according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION

[0031] Reference will now be made in detail embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout the several views. To the extent that the embodiments presented herein can have different forms, the present description should not be construed as limited to the description set forth herein. Rather, the embodiments are provided as non-limiting examples so that this present disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art. Accordingly, the embodiments are described with the understanding that the embodiments are presented as aspects of the present description.

[0032] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of," "one or more of," and "at least one selected from the group of" are used herein to mean one or more of the listed elements can be present, and that "exactly one" of the listed elements can not be present. For example, throughout the present disclosure, the expression "at least one of a, b, and c" indicates that only a, only b, only c, (e.g., simultaneously) both a and b, (e.g., simultaneously) both a and c, (e.g., simultaneously) both b and c, all of a, b, and c, or variations thereof are contemplated.

[0033] It will also be understood that when one or more components (such as layers and / or substrates, etc.) are referred to as being "connected to" another layer or substrate, or as being "on" another layer or substrate, it can be directly on another layer or substrate, or intervening layers can also be present. Throughout the specification, like reference numerals refer to like components.

[0034] Because the present disclosure can have a variety of modifications and alternative forms, embodiments are illustrated in the drawings and described in detail herein. It should be understood that the aspects and features of the present disclosure, and methods of accomplishing the same, can be implemented in a variety of ways, as will be apparent after an analysis of the disclosure.

[0035] Unless otherwise defined, all chemical names, technical terms and scientific terms used herein have the meanings commonly understood by one of ordinary skill in the art to which the present disclosure pertains, and should not be interpreted in an idealized or overly formal sense. It will be understood that, although the terms "first" and / or "second" etc. can be used herein to describe one or more respective components, these components should not be limited by such terms. These terms are used only to distinguish one component from another. Thus, a first element could be termed a second element without departing from the teachings of the present disclosure. Similarly, a second element could be termed a first element. Expressions such as "a", "an" and "the" as utilized in the present disclosure are intended to be construed as "one or more" unless such an interpretation is clearly indicated in the context.

[0036] It will be further understood that the terms "comprises", "comprising", "comprise", "has", "have", "having", "includes", "including" and / or "include" as utilized in the present disclosure indicate the presence of the described features or elements but do not preclude the presence or addition of one or more other features or elements.

[0037] The term "may" will be understood to mean "one or more embodiments of the present disclosure" in which some embodiments include the described feature, and some embodiments do not include the feature and / or include an alternative feature. Similarly, optional language such as "can" refers to "one or more embodiments of the present disclosure" in which some embodiments include the corresponding recited item.

[0038] For ease of explanation, the size of the elements in the accompanying drawings can be exaggerated. In other words, because the size of components (e.g., thickness) is arbitrarily illustrated in the drawings for ease of explanation, the embodiments below are not limited thereto.

[0039] For ease of description, spatially relative terms, such as "beneath", "below", "lower", "above", "upper", "bottom" and / or "top", etc., can be used herein for the purpose of describing one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0040] In this context, "consisting essentially of means that any additional components make no substantial contribution to the chemical, physical, optical, or electrical properties of the target portion.

[0041] INTRODUCTION

[0042] In addition to ZnSeTe quantum dots, indium phosphide (InP) based quantum dots can be an example of blue quantum dots (e.g., as distinguished from other blue quantum dots). Given that InP has a relatively narrow bulk band gap of 1.34 electron volt (eV), a blue quantum dot formed from a single component of InP (as implemented) can have a very small size of about 2 nanometer (nm), and thus such a blue quantum dot is thermodynamically unstable. Therefore, by introducing a gallium phosphide (GaP) component having a relatively wide band gap energy of 2.24 eV, InP 1-x Ga x P (0 < x < 1) alloy quantum dots can achieve blue light emission.

[0043] For synthesis of comparable (existing) In 1-x Ga x Most gallium precursors for synthesis of comparable (existing) In

[0044] In some embodiments, comparable (existing) In 1-x Ga xThe P synthesis method mainly uses a top-down synthesis method (also called cation exchange) in which In atoms are replaced with Ga atoms after the synthesis of InP quantum dots. In this synthesis method, if the outward diffusion of host cations present on the surface of the InP quantum dots is limited thermodynamically, it is possible to synthesize quantum dots in the form of core / shell structure of InP / GaP form instead of InGaP alloy. If the outward diffusion of host cations is faster than the inward diffusion of guest cations, vacancies as defects exist within the quantum dots, causing a decrease in crystallinity and optical property problems.

[0045] The manufacturing method according to one or more embodiments attempts to develop InP / GaP core / shell quantum dots by using a bottom-up synthesis technique using a monomeric gallium precursor with high reactivity. 1-x Ga x The P alloy quantum dot synthesis method, for example, 0.1 < x < 0.9, 0.2 < x < 0.8, 0.3 < x < 0.7, 0.4 < x < 0.6, or x = 0.5. In some embodiments, the reactivity in the alloy formation process is improved by using a trimethyl gallium (TMGa) precursor existing in a monomeric structure.

[0046] The method of manufacturing a quantum dot core according to an embodiment includes:

[0047] The method of manufacturing a quantum dot core according to an embodiment includes:

[0048] reacting the first gallium precursor having a monomeric structure and a C1-C 18 a process (1) in which a fatty acid forms a second gallium precursor;

[0049] a process (2) in which the second gallium precursor, an indium precursor, and a zinc precursor are reacted to form a resulting product; and

[0050] a process (3) in which the resulting product of the process (2) and a phosphorus precursor are reacted.

[0051] According to one or more embodiments, the first gallium precursor having a monomeric structure can include gallium and a ligand,

[0052] wherein the ligand can include a C1-C 60 alkyl group, a C5-C 60 1,3-diketone, or any combination thereof.

[0053] For example, the first gallium precursor can include three ligands. The three ligands can be the same as or different from each other.

[0054] According to one or more embodiments, the C1-C 60 alkyl group can include a methyl group, an ethyl group, an isobutyl group, an isopropyl group, a tert-butyl group, or any combination thereof.

[0055] According to one or more embodiments, the C5-C60 1,3-diketones can include acetylacetone, dibenzoylmethane, 1,3-cyclohexanedione, 5,5-dimethyl-1,3-cyclohexanedione, or any combination thereof.

[0056] According to one or more embodiments, the first gallium precursor having a monomer structure can include trimethyl gallium, triethyl gallium, triisobutyl gallium, triisopropyl gallium, tri-tert-butyl gallium, acetylacetone gallium, or any combination thereof.

[0057] The first gallium precursor having a monomer structure can be relatively more reactive than a gallium precursor having a dimer structure (e.g., Ga2I6 as a dimer of GaI3). Accordingly, even when subsequently reacted with an indium precursor and a zinc precursor, a C1-C 18 The second gallium precursor formed from the fatty acid can also be relatively more reactive.

[0058] According to one or more embodiments, the C1-C 18 The fatty acid can include a C1-C 18 saturated fatty acid, a C1-C 18 unsaturated fatty acid, or any combination thereof.

[0059] According to one or more embodiments, the C1-C 18 The fatty acid can include lauric acid, oleic acid, palmitic acid, stearic acid, myristic acid, or any combination thereof.

[0060] According to one or more embodiments, the second gallium precursor can include gallium laurate, gallium oleate, gallium palmitate, gallium stearate, allium myristate, or any combination thereof.

[0061] According to one or more embodiments, process (1) (formation of the second gallium precursor from the first gallium precursor and the C1-C 18 The fatty acid) can include a heating process. For example, in process (1), the first gallium precursor having a monomer structure and the C1-C 18 fatty acid can be heated in a solvent to form the second gallium precursor. For example, the heating temperature can be from about 100 °C to about 250 °C.

[0062] For example, the first gallium precursor can be dissolved in a solvent, which can be tri-octylphosphine (TOP), to form a first gallium precursor-tri-octylphosphine complex, and then (e.g., 3 equivalents of the first gallium precursor) can be reacted with the C1-C 18 fatty acid, causing formation of the second gallium precursor.

[0063] According to one or more embodiments, the indium precursor can include indium laurate, indium oleate, indium palmitate, indium stearate, indium myristate, or any combination thereof.

[0064] For example, the indium precursor can be obtained by reacting a corresponding fatty acid and indium acetate. For example, indium laurate can be obtained by reacting indium acetate and lauric acid at a molar ratio of 1 :3.

[0065] According to one or more embodiments, the zinc precursor can include zinc laurate, zinc oleate, zinc palmitate, zinc stearate, zinc myristate, or any combination thereof.

[0066] According to one or more embodiments, process (2) (reacting the second gallium precursor, the indium precursor, and the zinc precursor) can include a heating process. For example, in process (2), the second gallium precursor, the indium precursor, and the zinc precursor can be heated in a solvent. For example, the heating temperature can be about 100 °C to about 350 °C.

[0067] In process (2) of reacting the second gallium precursor, the indium precursor, and the zinc precursor, an indium-zinc-gallium carboxylate complex (In-Zn-Ga carboxylate complex) can be formed. The carboxylate can include any one of anions of the fatty acids each included in the second gallium precursor, the indium precursor, and the zinc precursor.

[0068] According to one or more embodiments, the phosphorus precursor can include tris(trimethylsilyl)phosphine (TMS3P) and / or tris(dimethylamino)phosphine (DMA3P).

[0069] For example, the phosphorus precursor can react with the In-Zn-Ga carboxylate complex formed in process (2) to form a quantum dot core.

[0070] According to one or more embodiments, process (3) (reacting the resulting product and the phosphorus precursor) can include a heating process. For example, the phosphorus precursor and the resulting product of process (2) can be heated in a solvent. For example, the heating temperature can be about 100 °C to about 350 °C.

[0071] A quantum dot core according to another aspect can be manufactured by the aforementioned method.

[0072] According to one or more embodiments, a ratio of valley peaks in an ultraviolet (UV) absorption spectrum of the quantum dot core can have a value less than 1.

[0073] The smaller the valley-to-peak ratio in the UV absorption spectrum of the quantum dot core, the narrower the size distribution of the quantum dot core. If the size distribution of the quantum dot is wide, the color purity of the emitted light is not good. If the size distribution of the quantum dot is narrow, the color purity of the emitted light is good. The size distribution of the quantum dot is related to the size distribution of the quantum dot core. If the size distribution of the quantum dot core is wide, the size distribution of the quantum dot can also be wide. If the size distribution of the quantum dot core is narrow, the size distribution of the quantum dot can also be narrow.

[0074] The quantum dot core manufactured by the method according to one or more embodiments can have a valley-to-peak ratio in the UV absorption spectrum of, for example, less than 0.9.

[0075] The quantum dot according to another aspect can include a quantum dot core and a shell, and can have a core / shell structure of In 1-x Ga x P / ZnS, 0 < x < 1.

[0076] The quantum dot core can have a Zn component, and the Zn component can be (e.g., almost completely) present on the surface of the quantum dot core. Therefore, when a sulfur (S) containing component is added to the quantum dot core to form a shell, a core / shell structure of In 1-x Ga x P / ZnS can be formed.

[0077] According to one or more embodiments, the quantum dot can have a valley-to-peak ratio in the UV absorption spectrum of at most 0.9 (e.g., 0.9 or less). If the size distribution of the quantum dot is wide, the color purity of the emitted light is not good. If the size distribution of the quantum dot is narrow, the color purity of the emitted light is good.

[0078] The quantum dot according to one or more embodiments can have a valley-to-peak ratio in the UV absorption spectrum of, for example, less than 0.7.

[0079] According to one or more embodiments, the quantum dot can have a full width at half maximum in the emission spectrum (at 480 nm) of at most 40 nm (e.g., 40 nm or less).

[0080] The quantum dot according to one or more embodiments can have a narrow size distribution, for example, have a relatively high uniformity, so the full width at half maximum of the emission peak can be at most 40 nm (e.g., 40 nm or less). For example, the quantum dot according to one or more embodiments can have a full width at half maximum of the emission peak at 480 nm of about 38 nm.

[0081] Light emitting device

[0082] The light emitting device according to another aspect includes:

[0083] A first electrode;

[0084] a second electrode opposite (e.g., facing) the first electrode; and

[0085] a sandwich layer disposed between the first electrode and the second electrode and including an emissive layer,

[0086] wherein the emissive layer can include quantum dots.

[0087] An electronic device according to another aspect of embodiments includes a light emitting device.

[0088] According to one or more embodiments, the electronic device can further include a thin film transistor,

[0089] wherein the thin film transistor includes a source electrode and a drain electrode, and

[0090] The first electrode of the light emitting device can be electrically connected to the source electrode or the drain electrode of the thin film transistor.

[0091] According to one or more embodiments, the electronic device can further include a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or a combination thereof.

[0092] According to one embodiment, the color conversion layer can include quantum dots as described herein.

[0093] The term "sandwich layer" as used herein refers to a single layer and / or multiple layers disposed between the first electrode and the second electrode of the light emitting device.

[0094] Figure 6 Description

[0095] Figure 6 is a schematic cross-sectional view of a light emitting device 10 according to one or more embodiments. The light emitting device 10 includes a first electrode 110, a sandwich layer 130, and a second electrode 150.

[0096] Hereinafter, a structure of a light emitting device 10 according to one or more embodiments and a method of manufacturing the light emitting device 10 are described with reference to Figure 6

[0097] The first electrode 110

[0098] In Figure 6 In the above, a substrate can be additionally disposed under the first electrode 110 or over the second electrode 150. A glass substrate and / or a plastic substrate can be used as the substrate. In one or more embodiments, the substrate can be a flexible substrate, and can include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0099] ​The first electrode 110 can be formed by, for example, depositing and / or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 can be a high work function material that facilitates hole injection.

[0100] The first electrode 110 can be a reflective electrode, a transflective electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, the material for forming the first electrode 110 can include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In one or more embodiments, when the first electrode 110 is a transflective electrode or a reflective electrode, the material for forming the first electrode 110 can include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0101] The first electrode 110 can have a single-layer structure including (e.g., consisting of) a single layer or a multi-layer structure including multiple layers. In one or more embodiments, the first electrode 110 can have a three-layer structure of ITO / Ag / ITO.

[0102] The interlayer 130

[0103] The interlayer 130 is disposed above the first electrode 110. The interlayer 130 includes an emissive layer.

[0104] The interlayer 130 can further include a hole transport region disposed between the first electrode 110 and the emissive layer and an electron transport region disposed between the emissive layer and the second electrode 150.

[0105] In addition to one or more appropriate organic materials, the interlayer 130 can further include a metal-containing compound (such as an organometallic compound) and / or an inorganic material (such as a quantum dot), etc.

[0106] In one or more embodiments, the interlayer 130 can include i) two or more emissive layers stacked in sequence between the first electrode 110 and the second electrode 150, and ii) a charge generation layer located between the two or more emissive layers. When the interlayer 130 includes an emissive layer and a charge generation layer as described herein, the light-emitting device 10 can be a tandem light-emitting device.

[0107] The hole transport region in the interlayer 130

[0108] The hole transport zone can have i) a single layer structure comprising (e.g., consisting of) a single layer comprising (e.g., consisting of) a single material, ii) a single layer structure comprising (e.g., consisting of) a single layer comprising (e.g., consisting of) a plurality of different materials, or iii) a multi-layer structure comprising a plurality of layers comprising a plurality of different materials.

[0109] The hole transport zone can comprise a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or any combination thereof.

[0110] In one or more embodiments, the hole transport zone can have a multi-layer structure comprising a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, the layers of each structure being stacked in order from the first electrode 110.

[0111] The hole transport zone can comprise a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0112] Formula 201

[0113]

[0114] Formula 202

[0115]

[0116] wherein, in Formula 201 and Formula 202,

[0117] L 201 to L 204 may each independently be unsubstituted or substituted with at least one R 10a substituted C3-C 60 carbocyclyl, or unsubstituted or substituted with at least one R 10a substituted C1-C 60 heterocyclyl,

[0118] L 205 may be -O-*, -S-*, -N(Q 201 )-*, unsubstituted or substituted with at least one R 10a substituted C1-C 20 alkylene, unsubstituted or substituted with at least one R 10a substituted C2-C 20 alkenylene, unsubstituted or substituted with at least one R 10a substituted C3-C 60 carbocyclyl, or unsubstituted or substituted with at least one R 10aReplacement C1-C 60 Heterocyclic group,

[0119] xa1 to xa4 can each be an integer selected from 0 to 5 independently.

[0120] xa5 can be an integer selected from 1 to 10.

[0121] R 201 To R 204 and Q 201 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic group,

[0122] R 201 and R 202 Optionally via a single bond (e.g., a covalent single bond), unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form an unsubstituted or substituted compound with at least one R group. 10a Replacement C8-C 60 Polycyclic groups (e.g., carbazole group),

[0123] R 203 and R 204 Optionally via a single bond (e.g., a covalent single bond), unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form unsubstituted or substituted compounds with at least one R group. 10a Replacement C8-C 60 Polycyclic groups, and

[0124] na1 can be an integer selected from 1 to 4.

[0125] The thickness of the hole transport region can be approximately to approximately For example, about to approximately When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be approximately [missing information]. to approximately For example, about to approximately Furthermore, the thickness of the hole transport layer can be approximately to approximately For example, about to approximately When the thicknesses of the hole transport zone, the hole injection layer, and the hole transport layer are within the ranges described herein, suitable or satisfactory hole transport properties can be obtained without a significant increase in driving voltage.

[0126] The emission auxiliary layer can increase light emission efficiency by compensating for an optical resonance distance by the wavelength of light emitted from the emission layer, and the electron blocking layer can block electron leakage from the emission layer to the hole transport zone. Materials that can be included in the hole transport zone can be included in the emission auxiliary layer and the electron blocking layer.

[0127] p-dopant

[0128] In addition to the aforementioned materials, the hole transport zone can further include a charge generating material for improving the electrical conductivity properties. The charge generating material can be (e.g., substantially) uniformly or (e.g., substantially) non-uniformly dispersed in the hole transport zone (e.g., in the form of a single layer including (e.g., consisting of) the charge generating material).

[0129] The charge generating material can be, for example, a p-dopant.

[0130] For example, the LUMO energy level of the p-dopant can be less than or equal to -3.5 electron volts (eV).

[0131] In one or more embodiments, the p-dopant can include a quinone derivative, a cyano-containing compound, a compound including an element EL1 and an element EL2, or any combination thereof.

[0132] Examples of the quinone derivative can include TCNQ and / or F4-TCNQ.

[0133] Examples of the cyano-containing compound can include HAT-CN and / or a compound represented by Formula 221.

[0134]

[0135] Formula 221

[0136]

[0137] In Formula 221,

[0138] R 221 to R 223 may each independently be unsubstituted or substituted with at least one R 10a substituted C3-C 60 carbocyclyl or unsubstituted or substituted with at least one R 10a substituted C1-C 60 heterocyclyl, and

[0139] R 221To R 223 At least one of them can be independently replaced by C3-C respectively. 60 Carbocyclic or C1-C 60 Heterocyclic groups: cyano; -F; -Cl; -Br; -I; C1-C substituted with cyano, -F, -Cl, -Br, -I or any combination thereof 20 Alkyl groups; or any combination thereof.

[0140] In a compound that includes elements EL1 and EL2, element EL1 may be a metal, a metalloid, or a combination thereof, and element EL2 may be a nonmetal, a metalloid, or a combination thereof.

[0141] Examples of metals may include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and / or cesium (Cs); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), and / or barium (Ba); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), and cobalt (C). (e.g., o), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag) and / or gold (Au); post-transition metals (e.g., zinc (Zn), indium (In) and / or tin (Sn)); and lanthanides (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb) and / or lutetium (Lu)).

[0142] Examples of metalloids may include silicon (Si), antimony (Sb), and tellurium (Te).

[0143] Examples of nonmetals may include oxygen (O) and halogens (e.g., F, Cl, Br and / or I).

[0144] Examples of compounds including elements EL1 and EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides and / or metal iodides), quasi-metal halides (e.g., quasi-metal fluorides, quasi-metal chlorides, quasi-metal bromides and / or quasi-metal iodides), metal tellurides, or any combination thereof.

[0145] Examples of metal oxides can include tungsten oxides (e.g., WO, W2O3, WO2, WO3, and / or W2O5, etc.), vanadium oxides (e.g., VO, V2O3, VO2, and / or V2O5, etc.), molybdenum oxides (e.g., MoO, Mo2O3, MoO2, MoO3, and / or Mo2O5, etc.), and rhenium oxides (e.g., ReO3, etc.).

[0146] Examples of metal halides can include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.

[0147] Examples of alkali metal halides can include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and CsI.

[0148] Examples of alkaline earth metal halides can include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2.

[0149] Examples of transition metal halides can include titanium halides (e.g., TiF4, TiCl4, TiBr4, and / or TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, and / or ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, and / or HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, and / or VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, and / or NbI3, etc.), tantalum halides (e.g., TaF3, TaCl3, TaBr3, and / or TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, and / or CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, and / or MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, and / or WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, and / or MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, and / or TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2, and / or ReI2, etc.), ferrous halides (e.g., FeF2, FeCl2, FeBr2, and / or FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, and / or RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, and / or OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, and / or CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, and / or RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, and / or IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, and / or NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, and / or PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, and / or PtI2, etc.), cuprous halides (e.g., CuF, CuCl, CuBr, and / or CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, and / or AgI, etc.), and gold halides (e.g., AuF, AuCl, AuBr, and / or AuI, etc.).

[0150] Examples of post-transition metal halides can include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, and / or ZnI2, etc.), indium halides (e.g., InI3, etc.), and tin halides (e.g., SnI2, etc.).

[0151] Examples of lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, and SmI3.

[0152] Examples of quasi-metal halides may include antimony halides (e.g., SbCl5, etc.).

[0153] Examples of metal tellurides may include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te and / or Cs₂Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe and / or BaTe, etc.), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, F₂Te, etc.). (eTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe and / or Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.) and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe and / or LuTe, etc.).

[0154] emission layer in interlayer 130

[0155] When the light-emitting device 10 is a full-color light-emitting device, the emitting layer can be patterned as a red emitting layer, a green emitting layer, and / or a blue emitting layer according to the sub-pixels. In one or more embodiments, the emitting layer may have a stacked structure of two or more layers selected from red, green, and blue emitting layers, wherein the two or more layers are in contact with or separated from each other to emit white light. In one or more embodiments, the emitting layer may include two or more materials selected from red, green, and blue emitting materials, wherein the two or more materials are mixed with each other in a single layer to emit white light.

[0156] The thickness of the emission layer can be approximately to approximately For example, about to approximately When the thickness of the emitting layer is within the range described in this paper, excellent light emission characteristics can be obtained without significantly increasing the driving voltage.

[0157] quantum dots

[0158] By adjusting the size of the quantum dots, the energy band gap can be adjusted, so that light of one or more appropriate wavelengths can be emitted from the quantum dot emissive layer. Accordingly, by using quantum dots of different sizes, light emitting devices that emit light of one or more appropriate wavelengths can be implemented. In one or more embodiments, the size of the quantum dots can be selected to emit red light, green light, and / or blue light. In some embodiments, the size of the quantum dots can be configured to emit white light by a combination of light of one or more appropriate colors.

[0159] The emissive layer can include quantum dots described herein.

[0160] The quantum dots according to one or more embodiments can emit blue light.

[0161] The diameter of the quantum dots can be, for example, about 1 nm to about 4 nm. In the present disclosure, when a quantum dot, quantum dots, or quantum dot particles are spherical, the "diameter" indicates the particle size or the average particle size, and when the particles are non-spherical, the "diameter" indicates the length of the long axis or the average length of the long axis. The diameter of the particles can be measured using a scanning electron microscope or a particle size analyzer. For example, a HORIBA, LA-950 laser particle size analyzer can be used as a particle size analyzer. When the size of the particles is measured using the particle size analyzer, the average particle size is referred to as D 50 . D 50 indicates the average diameter of the cumulative volume corresponding to 50% by volume of the particles in the particle size distribution (e.g., cumulative distribution), and indicates the value corresponding to 50% of the particle size from the smallest particle when the total number of particles is 100% in the distribution curve accumulated in order from the smallest particle size to the largest particle size.

[0162] A detailed description of the quantum dots is provided herein.

[0163] In some embodiments, the quantum dots can be in the form of spherical nanoparticles, conical nanoparticles, multi-armed nanoparticles, cubic nanoparticles; nanotubes; nanowires; nanofibers; or nanoplates.

[0164] The electron transport zone in the interlayer 130

[0165] The electron transport zone can have: i) a single layer structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single layer structure including (e.g., consisting of) a single layer including (e.g., consisting of) a plurality of different materials, or iii) a multi-layer structure including a plurality of layers including a plurality of different materials.

[0166] The electron transport zone can include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0167] For example, the electron transport zone can have a structure including an electron transport layer / electron injection layer structure or a hole blocking layer / electron transport layer / electron injection layer structure, in each of which the constituent layers are stacked in order from the emission layer.

[0168] The electron transport zone (e.g., the hole blocking layer or the electron transport layer in the electron transport zone) can include a nitrogen-containing C1-C 60 a metal-free compound.

[0169] In one or more embodiments, the electron transport zone can include a compound represented by Formula 601:

[0170] Formula 601

[0171] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 .

[0172] In Formula 601,

[0173] Ar 601 and L 601 may each independently be C3-C 10a carbocyclyl unsubstituted or substituted with at least one R 60 C1-C 10a heterocyclyl unsubstituted or substituted with at least one R 60 ,

[0174] xe11may be 1, 2, or 3,

[0175] xe1may be 0, 1, 2, 3, 4, or 5,

[0176] R 601 may be C3-C 10a carbocyclyl unsubstituted or substituted with at least one R 60 C1-C 10a heterocyclyl unsubstituted or substituted with at least one R 60 , -Si(Q 601 )(Q 602 )(Q 603 ), -C(=O)(Q 601 ), -S(=O)2(Q 601 ), or -P(=O)(Q 601 )(Q 602 ),

[0177] Q 601 to Q 603 may each be as described herein with reference to Q1,

[0178] xe21may be 1, 2, 3, 4, or 5, and

[0179] at least one of Ar 601 , L 601 , and R 601 may each independently be unsubstituted or substituted with at least one R 10a substituted naphthyl. 60

[0180] In one or more embodiments, when xe11in Formula 601 is 2 or greater, two or more Ar 601 may be connected together via a single bond (e.g., a covalent single bond).

[0181] In one or more embodiments, Ar 601 in Formula 601 may be unsubstituted or substituted with at least one R 10a substituted anthracenyl.

[0182] In one or more embodiments, the electron transport region can include a compound represented by Formula 601-1:

[0183] Formula 601-1

[0184]

[0185] where, in Formula 601-1,

[0186] X 614 may be N or C(R 614 ), X 615 may be N or C(R 615 ), X 616 may be N or C(R 616 ), and X 614 to X 616 may be N,

[0187] L 611 to L 613 are each the same as described in connection with L 601 ,

[0188] xe611to xe613are each the same as described in connection with xe1,

[0189] R 611 to R 613 are each the same as described in connection with R 601 , and

[0190] R 614 to R 616 ​may each independently be hydrogen, deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 alkyl, C1-C 20 alkoxy, unsubstituted or substituted with at least one R 10a substituted C3-C 60 carbocyclyl, or unsubstituted or substituted with at least one R 10a substituted C1-C 60 heterocyclyl.

[0191] In one or more embodiments, xe1and xe611to xe613in Formula 601 and Formula 601-1 may

[0192] The thickness of the electron transport region can be about to about For example, about to about When the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer can be about to about For example, about to about and the thickness of the electron transport layer can be about to about For example, about to about When the thickness of the hole blocking layer and / or the electron transport layer is within these ranges as described herein, suitable or satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0193] In addition to the materials described herein, the electron transport region (e.g., the electron transport layer in the electron transport region) can further include a metal- containing material.

[0194] The metal-containing material can include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ion of the alkali metal complex can be a Li ion, a Na ion, a K ion, a Rb ion, or a Cs ion, and the metal ion of the alkaline earth metal complex can be a Be ion, a Mg ion, a Ca ion, a Sr ion, or a Ba ion. In one or more embodiments, the metal-containing material can be a Li- based compound and / or a Ca-based compound. The ligand coordinated to the metal ion of the alkali metal complex or the alkaline earth metal complex can include a hydroxyquinoline, a hydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, a hydroxyphenanthridine, a hydroxyphenyl-oxazole, a hydroxyphenyl-thiazole, a hydroxyphenyl-oxadiazole, a hydroxyphenyl-thiadiazole, a hydroxyphenyl-pyridine, a hydroxyphenyl-benzimidazole, a hydroxyphenyl-benzothiazole, a bipyridine, a phenanthroline, a cyclopentadiene, or any combination thereof.

[0195] In one or more embodiments, the metal-containing material can include a Li complex. The Li complex can include, for example, compound ET-D1(Liq) and / or compound ET-D2:

[0196]

[0197] The electron transport region can include an electron injection layer that facilitates injection of electrons from the second electrode 150. The electron injection layer can directly contact the second electrode 150.

[0198] The electron injection layer can have: i) a single-layer structure that includes (e.g., consists of) a single layer that includes (e.g., consists of) a single material, ii) a single-layer structure that includes (e.g., consists of) a single layer that includes (e.g., consists of) a plurality of different materials, or iii) a multi-layer structure that includes a plurality of layers (including a plurality of different materials).

[0199] The electron injection layer can include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0200] The alkali metal can include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal can include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal can include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0201] The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound can include an oxide, a halide (e.g., a fluoride, a chloride, a bromide, and / or an iodide, etc.), and / or a telluride of the alkali metal, the alkaline earth metal, and the rare earth metal, or any combination thereof.

[0202] The alkali metal-containing compound can include: an alkali metal oxide, such as Li2O, Cs2O, and / or K2O; an alkali metal halide, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI; or any combination thereof. The alkaline earth metal-containing compound can include an alkaline earth metal oxide, such as BaO, SrO, CaO, Ba x Sr 1-x O (x is a real number satisfying 0 < x < 1) and / or Ba x Ca 1-xO (x is a real number satisfying 0 < x < 1). The rare earth metal-containing compound can include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In one or more embodiments, the rare earth metal-containing compound can include lanthanide tellurides. Examples of lanthanide tellurides can include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and / or Lu2Te3.

[0203] The alkali metal complex, the alkaline earth metal complex, and the rare earth metal complex can include i) one of the metal ions of the alkali metal, the alkaline earth metal, and the rare earth metal, and ii) a ligand bonded to the metal ion, such as a hydroxyquinoline, a hydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, a hydroxyphenanthridine, a hydroxyphenyl-oxazole, a hydroxyphenyl-thiazole, a hydroxyphenyl-oxadiazole, a hydroxyphenyl-thiadiazole, a hydroxyphenyl-pyridine, a hydroxyphenyl-benzimidazole, a hydroxyphenyl-benzothiazole, a bipyridine, a phenanthroline, a cyclopentadiene, or any combination thereof.

[0204] As described herein, the electron injection layer can include (e.g., consist of) an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof. In one or more embodiments, the electron injection layer can further include an organic material (e.g., a compound represented by Formula 601).

[0205] In one or more embodiments, the electron injection layer can include (e.g., consist of) i) an alkali metal-containing compound (e.g., an alkali metal halide); ii) a) an alkali metal-containing compound (e.g., an alkali metal halide); and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer can be a KI:Yb co-deposited layer and / or a RbI:Yb co-deposited layer, etc.

[0206] When the electron injection layer further includes an organic material, the alkali metal, the alkaline earth metal, the rare earth metal, the alkali metal-containing compound, the alkaline earth metal-containing compound, the rare earth metal-containing compound, the alkali metal complex, the alkaline earth metal complex, the rare earth metal complex, or any combination thereof can be uniformly or non-uniformly dispersed in a matrix including the organic material.

[0207] The thickness of the electron injection layer can be about 0.1 nm to about 10 nm, about 0.1 nm to about 5 nm, about 0.1 nm to about 2 nm, about 0.1 nm to about 1 nm, about 0.1 nm to about 0.5 nm, about 0.1 nm to about 0.2 nm, about 0.2 nm to about 10 nm, about 0.2 nm to about 5 nm, about 0.2 nm to about 2 nm, about 0.2 nm to about 1 nm, about 0.2 nm to about 0.5 nm, about 0.5 nm to about 10 nm, about 0.5 nm to about 5 nm, about 0.5 nm to about 2 nm, about 0.5 nm to about 1 nm, about 1 nm to about 10 nm, about 1 nm to about 5 nm, about 1 nm to about 2 nm, about 2 nm to about 10 nm, about 2 nm to about 5 nm, about 5 nm to about 10 nm, about 0.1 nm, about 0.2 nm, about 0.5 nm, about 1 nm, about 2 nm, about 5 nm, or about 10 nm. to about (e.g., about to about ). When the thickness of the electron injection layer is in the range as described herein, proper or satisfactory electron injection characteristics can be obtained without a significant increase in driving voltage.

[0208] The second electrode 150

[0209] The second electrode 150 is disposed on the interlayer 130. The second electrode 150 can be a cathode as an electron injection electrode, and a material each having a low work function can be used for forming the second electrode 150.

[0210] The second electrode 150 can include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 can be a transmissive electrode, a transreflective electrode, or a reflective electrode.

[0211] The second electrode 150 can have a single layer structure or a multi-layer structure including a plurality of layers.

[0212] The capping layer

[0213] The first capping layer can be disposed outside (e.g., on) the first electrode 110, and / or the second capping layer can be disposed outside (e.g., on) the second electrode 150. In some embodiments, the light emitting device 10 can have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are sequentially stacked in the recited order, a structure in which the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are sequentially stacked in the recited order, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are sequentially stacked in the recited order.

[0214] Light generated by the emission layer of the interlayer 130 of the light emitting device 10 can be extracted toward the outside through the first electrode 110 as a transreflective electrode or a transmissive electrode and the first capping layer. Light generated by the emission layer of the interlayer 130 of the light emitting device 10 can be extracted toward the outside through the second electrode 150 as a transreflective electrode or a transmissive electrode and the second capping layer.

[0215] The first capping layer and the second capping layer can increase external emission efficiency according to the principle of constructive interference. Accordingly, light extraction efficiency of the light emitting device 10 can be increased, so that luminous efficiency of the light emitting device 10 can be increased.

[0216] Each of the first capping layer and the second capping layer can include a material having a refractive index of 1.6 or more (at a wavelength of 589 nm).

[0217] The first capping layer and the second capping layer can each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic hybrid capping layer including an organic material and an inorganic material.

[0218] At least one selected from the first capping layer and the second capping layer can each independently include a carbocyclic compound, a heterocyclic compound, an amine-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine-containing compound can be optionally substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In one or more embodiments, at least one selected from the first capping layer and the second capping layer can each independently include an amine-containing compound.

[0219] In one or more embodiments, at least one selected from the first capping layer and the second capping layer can each independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof.

[0220] In one or more embodiments, at least one selected from the first capping layer and the second capping layer can each independently be one of compounds CP1 to CP6, β-NPB, or any appropriate compound:

[0221]

[0222] Electronic device

[0223] The light emitting device can be included in one or more appropriate electronic devices. For example, the electronic device including the light emitting device can be a light emitting device and / or an authentication device, etc.

[0224] In addition to the light emitting device, the electronic device (e.g., a light emitting device) can further include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer can be disposed in at least one traveling direction of light emitted from the light emitting device. For example, the light emitted from the light emitting device can be blue light. Detailed descriptions of the light emitting device are provided herein. In one or more embodiments, the color conversion layer can include quantum dots. The quantum dots can be, for example, quantum dots as described herein.

[0225] The electronic device can include a first substrate. The first substrate can include a plurality of sub-pixel regions, the color filter can include a plurality of color filter regions respectively corresponding to the plurality of sub-pixel regions, and the color conversion layer can include a plurality of color conversion regions respectively corresponding to the plurality of sub-pixel regions.

[0226] The pixel defining film can be disposed between the plurality of sub-pixel regions to define each of the plurality of sub-pixel regions.

[0227] The color filter can further include a plurality of color filter regions and a light blocking pattern disposed between the plurality of color filter regions, and the color conversion layer can further include a plurality of color conversion regions and a light blocking pattern disposed between the color conversion regions.

[0228] The plurality of color filter regions (or the plurality of color conversion regions) can include a first region emitting a first color light, a second region emitting a second color light, and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light can have different maximum emission wavelengths. In one or more embodiments, the first color light can be red light, the second color light can be green light, and the third color light can be blue light. In one or more embodiments, the plurality of color filter regions (or the plurality of color conversion regions) can include quantum dots. In more detail, the first region can include red quantum dots, the second region can include green quantum dots, and the third region can not include quantum dots. A detailed description of the quantum dots is provided herein. The first region, the second region, and / or the third region can each further include a scatterer.

[0229] In one or more embodiments, the light emitting device can emit a first light, the first region can absorb the first light to emit a first-1 color light, the second region can absorb the first light to emit a second-1 color light, and the third region can absorb the first light to emit a third-1 color light. In some embodiments, the first-1 color light, the second-1 color light, and the third-1 color light can have different maximum emission wavelengths. In more detail, the first light can be blue light, the first-1 color light can be red light, the second-1 color light can be green light, and the third-1 color light can be blue light.

[0230] In addition to the light emitting device as described herein, the electronic device can further include a thin film transistor. The thin film transistor can include a source electrode, a drain electrode, and an active layer, wherein any one selected from the source electrode and the drain electrode can be electrically connected to any one selected from the first electrode and the second electrode of the light emitting device.

[0231] The thin film transistor can further include a gate electrode and / or a gate insulating film, etc.

[0232] The active layer can include crystalline silicon, amorphous silicon, organic semiconductor, and / or oxide semiconductor, etc.

[0233] The electronic device can further include a sealing portion to seal the light emitting device. The sealing portion can be disposed between the color filter and / or the color conversion layer and the light emitting device. The sealing portion allows light from the light emitting device to be extracted to the outside while preventing or reducing penetration of ambient air and / or moisture into the light emitting device. The sealing portion can be a sealing substrate including a transparent glass substrate and / or a plastic substrate. When the sealing portion is a thin film encapsulation layer including at least one of an organic layer and an inorganic layer, the electronic device can be flexible.

[0234] Depending on the use of the electronic device, one or more appropriate functional layers can be additionally disposed on the sealing portion in addition to the color filter and / or the color conversion layer. Examples of the functional layer can include a touch screen layer and a polarizing layer. The touch screen layer can be a pressure sensitive touch screen layer, a capacitive touch screen layer, or an infrared touch screen layer. The authentication device can be a biometric authentication device that authenticates an individual, for example, by using biometric information of a living body (e.g., a fingerprint and / or a pupil, etc.).

[0235] In addition to the light emitting device as described herein, the authentication device can further include a biometric information collector.

[0236] The electronic device can be (e.g., applied to) a component of one or more appropriate displays, light sources, lighting devices, personal computers (e.g., personal mobile computers), mobile phones, digital cameras, electronic organizers, electronic dictionaries, electronic game machines, medical tools (e.g., electronic thermometers, sphygmomanometers, blood glucose meters, pulse measurement devices, pulse wave measurement devices, electrocardiogram displays, ultrasonic diagnostic devices, or endoscope displays), fish finders, one or more appropriate measuring tools, meters (e.g., meters for vehicles, aircraft, and ships), and / or projectors, etc. In one or more embodiments, the electronic device can be (e.g., applied to) a component of one or more appropriate smart phones, televisions, monitors, tablet computers, electric vehicles, tablet personal computers (PCs), mobile communication terminals, electronic notebooks, electronic books, portable multimedia players (PMPs), navigation devices, ultra-mobile personal computers (UMPCs), laptop computers, billboards, Internet of Things (IoT) devices, smart watches, watch phones, and / or head-mounted displays (HMDs), etc.

[0237] Manufacturing method

[0238] The layers constituting the hole transport zone, the emission layer, and the layers constituting the electron transport zone can be formed in the respective zones by using one or more appropriate methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and / or laser induced thermal imaging, etc.

[0239] When each layer constituting the hole transport zone, the emission layer, and each layer constituting the electron transport zone are formed by spin coating, the spin coating can be performed at a coating speed of about 2,000 rpm to about 5,000 rpm and a heat treatment temperature of about 80°C to about 200°C in consideration of the material included in the layer to be formed and the structure of the layer to be formed.

[0240] Definitions of terms

[0241] The term "C3-C 60 Carbon ring group" means a cyclic group consisting only of carbon atoms as ring-forming atoms and having 3 to 60 carbon atoms, for example, C3-C 50 Carbon ring group, C3-C 40 Carbon ring group, C3-C 30 Carbon ring group, C3-C 20 Carbon ring group or C3-C 10 Carbon ring group, and the term "C1-C 60 Hetero ring group" means a cyclic group having 1 to 60 carbon atoms and further including a hetero atom as a ring-forming atom in addition to carbon atoms, for example, C1-C 50 Hetero ring group, C1-C 40 Hetero ring group, C1-C 30 Hetero ring group, C1-C 20 Hetero ring group or C1-C 10 Hetero ring group. C3-C 60 Carbon ring group and C1-C 60 Hetero ring group can each be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are fused with each other. In one or more embodiments, C1-C 60 The number of ring-forming atoms of the C1-C

[0242] "Cyclic group" as used herein can include both C3-C 60 Carbon ring group and C1-C 60 Hetero ring group.

[0243] The term "π-electron-rich C3-C 60 Cyclic group" means a cyclic group having 3 to 60 carbon atoms and not including *-N=* as a ring-forming part, and the term "π-electron-deficient nitrogen-containing C1-C 60 Hetero ring group" means a hetero ring group having 1 to 60 carbon atoms and including *-N=* as a ring-forming part.

[0244] In one or more embodiments,

[0245] C3-C 60The carbocyclic group can be i) group T1, or ii) a fused-ring group in which two or more groups T1 are fused together (e.g., cyclopentadienyl, adamantyl, norbornel, phenyl, pentaenyl, naphthyl, azuleyl, indaryl, acenaphthel, phenanthyl, anthraceneyl, fluoranyl, triphenylene, pyrene, 1,2-benzophenantyl, peryl, penfenyl, heptaenyl, tetraphenyl, framyl, hexaphenyl, pentaphenyl, rubidyl, keratyl, ovoleyl, indole, fluorenyl, spirodifluorenyl, benzofluorenyl, indophenantyl, or indoanthrayl).

[0246] C1-C 60 The heterocyclic group can be i) group T2, ii) a fused-ring group in which two or more groups T2 are fused together, or iii) a fused-ring group in which at least one group T2 and at least one group T1 are fused together (e.g., pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzothiophene, dibenzofuranyl, indocarbazole, indolecarbazole, benzofuranocarbazole, benzothiophenecarbazole, benzothiophenecarbazole, benzoindocarbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthothiophene, benzofuranodibenzofuranyl, benzofuranyl... Brønsted dibenzothiophene, benzothiophene dibenzothiophene, pyrazolyl, imidazole, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, benzopyrazolyl, benzimidazolyl, benzooxazolyl, benzoisooxazolyl, benzothiazolyl, benzoisothiazolyl, pyridyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzyl (e.g., benzo[i]isoquinolinyl, quinoxalinyl, benzo[i]quinoxalinyl, quinazolinyl, benzo[i]quinoxalinyl, phenanthrolinyl, cenolinyl, phthalazinyl, naphthidyl, imidazo[i]pyridinyl, imidazo[i]pyrimidinyl, imidazo[i]triazinyl, imidazo[i]pyrazinyl, imidazo[i]pyridazinyl, azacarbazoyl, azafluorenyl, azadibenzothiopheneyl, azadibenzothiopheneyl and / or azadibenzofuranyl, etc.)

[0247] C3-C rich in π electrons 60 The cyclic group may be i) group T1, ii) a fused ring group in which two or more groups T1 are fused together, iii) group T3, iv) a fused ring group in which two or more groups T3 are fused together, or v) a fused ring group in which at least one group T3 and at least one group T1 are fused together (e.g., C3-C). 60Carbocyclic, 1H-pyrrole, thiorrole, borocyclopentadienyl, 2H-pyrrole, 3H-pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiorrole, benzothiophene, benzofuranyl, carbazole, dibenzothiorrole, dibenzothiophene, dibenzofuranyl, indole-carbazole, indole-carbazole, benzofuran-carbazole, benzothiophene-carbazole, benzothiorrole-carbazole, benzoindole-carbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthorrole, benzofuran-dibenzofuranyl, benzofuran-dibenzothiophene and / or benzothiophene-dibenzothiophene, etc.

[0248] Nitrogen-containing C1-C lacking π electrons 60 The heterocyclic group may be i) group T4, ii) a fused-ring group in which two or more groups T4 are fused together, iii) a fused-ring group in which at least one group T4 and at least one group T1 are fused together, iv) a fused-ring group in which at least one group T4 and at least one group T3 are fused together, or v) a fused-ring group in which at least one group T4, at least one group T1 and at least one group T3 are fused together (e.g., pyrazolyl, imidazole, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, benzopyrazolyl). Benzimidazolyl, benzoxazolyl, benzoisoxazolyl, benzothiazolyl, benzoisothiazolyl, pyridyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinel, cinolinyl, phthalazinyl, naphthidyl, imidazopyridyl, imidazopyrimidyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiophene, azadibenzothiophene, and / or azadibenzofuranyl, etc.

[0249] Group T1 can be cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornane (or bicyclo[2.2.1]heptane)yl, norbornenyl, bicyclo[1.1.1]pentane, bicyclo[2.1.1]hexane, bicyclo[2.2.2]octane, or phenyl.

[0250] Group T2may be furanyl, thienyl, 1H-pyrrolyl, silolyl, borolyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azasiloxy, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, tetrazinyl, pyrrolidinyl, imidazolidinyl, dihydropyrrolyl, piperidinyl, tetrahydropyridyl, dihydropyridyl, hexahydropyrimidinyl, tetrahydropyrimidinyl, dihydropyrimidinyl, piperazinyl, tetrahydropyrazinyl, dihydropyrazinyl, tetrahydropyridazinyl, or dihydropyridazinyl,

[0251] Group T3may be furanyl, thienyl, 1H-pyrrolyl, silolyl, or borolyl, and

[0252] Group T4may be 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azasiloxy, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, or tetrazinyl.

[0253] The term “cyclic group,” “C3-C 60 carbocyclyl,” “C1-C 60 heterocyclyl,” “π-electron rich C3-C 60 cyclic group,” or “π-electron deficient nitrogen-containing C1-C 60 heterocyclyl” as used herein can refer to a group that is fused to any cyclic group, monovalent group, or polyvalent group (e.g., divalent group, trivalent group, and / or tetravalent group, etc.) according to the structure of the formula to which the corresponding term is utilized. In one or more embodiments, “phenyl” can be benzo, phenyl, and / or phenylene, etc., which can be readily understood by one of ordinary skill in the art according to the structure of the formula to which “phenyl” is utilized.

[0254] Depending on the context (e.g., according to the structure of the formula to which the term is utilized), a divalent group can refer to or be a polyvalent (e.g., trivalent, tetravalent, etc., rather than merely divalent) group.

[0255] In one or more embodiments, monovalent C3-C 60 carbocyclyl and monovalent C1-C 60 heterocyclyl can include C3-C 10 cycloalkyl, C1-C 10 heterocycloalkyl, C3-C 10 cycloalkenyl, C1-C 10 heterocycloalkenyl, C6-C 60 aryl, C1-C 60heteroaryl, monovalent non-aromatic fused polycyclic group, and monovalent non-aromatic fused heteropolycyclic group, and divalent C3-C 60 carbocyclyl, and divalent C1-C 60 Examples of heterocyclyl groups can include C3-C 10 cycloalkylene, C1-C 10 heterocycloalkylene, C3-C 10 cycloalkenylene, C1-C 10 heterocycloalkenylene, C6-C 60 arylene, C1-C 60 heteroarylene, divalent non-aromatic fused polycyclic group, and divalent non-aromatic fused heteropolycyclic group.

[0256] The term “C1-C 60 alkyl” as used herein refers to a straight-chain or branched-chain aliphatic hydrocarbon monovalent group having from 1 to 60 carbon atoms, for example, C1-C 50 alkyl, C1-C 30 alkyl, C1-C 20 alkyl, or C1-C 10 alkyl, and examples thereof include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, t-butyl, n-pentyl, t-pentyl, neopentyl, isoamyl, sec-pentyl, 3-pentyl, sec-isoamyl, n-hexyl, iso-hexyl, sec-hexyl, t-hexyl, n-heptyl, iso-heptyl, sec-heptyl, t-heptyl, n-octyl, iso-octyl, sec-octyl, t-octyl, n-nonyl, iso-nonyl, sec-nonyl, t-nonyl, n-decyl, iso-decyl, sec-decyl, and t-decyl. The term “C1-C 60 alkylene” as used herein refers to a divalent group having the same structure as C1-C 60 alkyl.

[0257] The term “C1-C 18 fatty acid” as used herein refers to a compound in which -COOH is bonded to an alkyl group (C1-C 18 saturated fatty acid) or a compound in which -COOH is bonded to an alkenyl group (C1-C 18 unsaturated fatty acid).

[0258] The term “C5-C 60 1,3-diketone” as used herein refers to a compound having from 5 to 60 carbon atoms and containing a -CO-CH2-CO- moiety.

[0259] The term “C2-C 60 alkenyl” as used herein refers to a monovalent hydrocarbon group having at least one carbon-carbon double bond intermediate or terminal to a C2-C 60 alkyl group, for example, C2-C 30 alkynyl, C2-C 20alkynyl or C2-C 10 alkynyl, and examples thereof include ethynyl, propynyl, and butynyl. The term "C2-C 60 alkenyl" refers to a divalent group having the same structure as a C2-C 60 alkenyl.

[0260] The term "C1-C 60 alkynyl" refers to a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at the end of a C2-C 60 alkynyl, C2-C 30 alkynyl, C2-C 20 alkynyl or C2-C 10 alkynyl, and examples thereof include ethynyl and propynyl. The term "C2-C 60 alkynyl" refers to a divalent group having the same structure as a C2-C 60 alkynyl.

[0261] The term "C1-C 60 alkoxy" refers to a monovalent group represented by -O(A 101 )(wherein A 101 is a C1-C 60 alkyl) group, for example, C1-C 30 alkoxy, C1-C 20 alkoxy or C1-C 10 alkoxy, and examples thereof include methoxy, ethoxy, and isopropoxy.

[0262] The term "C3-C 10 cycloalkyl" refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples thereof can include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), bicyclo[l. l. l]pentyl, bicyclo[2. l. l]hexyl, and / or bicyclo[2.2.2]octyl, and the like. The term "C3-C 10 cycloalkyl" refers to a divalent group having the same structure as a C3-C 10 cycloalkyl.

[0263] The term "C1-C 10 heterocycloalkyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms and further including at least one heteroatom as a ring-forming atom in addition to carbon atoms, and examples thereof include 1,2,3,4-oxatriazolidinyl, tetrahydrofuranyl, and tetrahydrothiophenyl. The term "C1-C 10 heterocycloalkyl" refers to a divalent group having the same structure as a C1-C 10 heterocycloalkyl.

[0264] As used in this article, the term "C3-C" 10 "Cycloalkenyl" refers to a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring, and is non-aromatic, and examples include cyclopentenyl, cyclohexenyl, and cycloheptenyl. The term "C3-C" is used as in this document. 10 "Biopylene" refers to C3-C 10 Cycloalkenyl groups are divalent groups with the same structure.

[0265] As used in this article, the term "C1-C" 10 "Heterocyclic alkenyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms, further including at least one heteroatom as a cyclic atom in addition to the carbon atoms, and having at least one double bond in its ring. C1-C 10 Examples of heterocyclic alkenyl groups include 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, and 2,3-dihydrothiophenyl. The term "C1-C" is used herein. 10 "Heterocyclic alkenyl" refers to C1-C 10 Heterocyclic alkenyl groups are divalent groups with the same structure.

[0266] As used in this article, the term "C6-C" 60 "Aryl" refers to a monovalent group in a carbocyclic aromatic system having 6 to 60 carbon atoms, for example, C6-C 50 Aryl, C6-C 40 Aryl, C6-C 30 Aryl, C6-C 20 Aryl or C6-C 15 Aryl, and as used herein by the term "C6-C" 60 "Arylene" refers to a divalent group in a carbocyclic aromatic system with 6 to 60 carbon atoms. (C6-C) 60 Examples of aryl groups include phenyl, pentanenyl, naphthyl, azulel, indole, acenaphthel, phenanthyl, phenanthryl, anthracene, fluoranthyl, triphenylene, pyrene, 1,2-benzophenanthryl, perylene, pentanenyl, heptanenyl, tetraphenyl, framyl, hexaphenyl, pentaphenyl, rubiginyl, myristyl, and ovoleyl. When C6-C 60 Aryl and C6-C 60 When each of the aryl groups comprises two or more rings, the two or more rings can fused together.

[0267] As used in this article, the term "C1-C" 60 "Heteroaryl" refers to a monovalent group in a heterocyclic aromatic system having 1 to 60 carbon atoms and further including at least one heteroatom as a cyclic atom in addition to carbon atoms, for example, C1-C 50 heteroaryl, C1-C40 heteroaryl, C1-C 30 heteroaryl, C1-C 20 heteroaryl or C1-C 10 heteroaryl. The term "C1-C60heteroaryl" as used herein refers to a monovalent, monocyclic aromatic group having from 1 to 60 carbon atoms and further comprising, in addition to carbon atoms, at least one heteroatom as a ring-forming atom. Examples of C1-C 60 heteroarylene" refers to a divalent group of a heterocyclic aromatic system having from 1 to 60 carbon atoms and further comprising, in addition to carbon atoms, at least one heteroatom as a ring-forming atom. C1-C 60 Examples of heteroaryl include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzoquinolinyl, isoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinnolinyl, phenanthrolinyl, phthalazinyl, and naphthyridinyl. When C1-C 60 heteroaryl and C1-C 60 When each heteroarylene comprises two or more rings, the two or more rings can be fused to each other.

[0268] The term "monovalent non-aromatic fused polycyclic group" as used herein refers to a monovalent group having two or more rings fused to each other, only carbon atoms (e.g., from 8 to 60 carbon atoms) as ring-forming atoms, and no aromaticity in its molecular structure when considered as a whole, e.g., C8-C 60 monovalent non-aromatic fused polycyclic group, C8-C 50 monovalent non-aromatic fused polycyclic group, C8-C 40 monovalent non-aromatic fused polycyclic group, C8-C 30 monovalent non-aromatic fused polycyclic group or C8-C 20 monovalent non-aromatic fused polycyclic group. Examples of monovalent non-aromatic fused polycyclic group include indenyl, fluorenyl, spirobifluorenyl, benzo fluorenyl, indenophenanthryl, and indenanthracenyl. The term "divalent non-aromatic fused polycyclic group" as used herein refers to a divalent group having the same structure as a monovalent non-aromatic fused polycyclic group.

[0269] The term "monovalent non-aromatic fused heteropolycyclic group" as used herein refers to a monovalent group having two or more rings fused to each other, further comprising, in addition to carbon atoms (e.g., having from 1 to 60 carbon atoms), at least one heteroatom as a ring-forming atom, and no aromaticity in its molecular structure when considered as a whole, e.g., C1-C 60 monovalent non-aromatic fused heteropolycyclic group, C1-C 50 monovalent non-aromatic fused heteropolycyclic group, C1-C 40 monovalent non-aromatic fused heteropolycyclic group, C1-C 30 monovalent non-aromatic fused heteropolycyclic group or C1-C 20monovalent non-aromatic fused heteropolycyclic group. Examples of monovalent non-aromatic fused heteropolycyclic groups are pyrrolyl, thienyl, furanyl, indolyl, benzoindolyl, naphthoindolyl, isoindolyl, benzoisoindolyl, naphthoisoindolyl, benzothiophyl, benzothienyl, benzofuranyl, carbazolyl, dibenzothiophyl, dibenzothienyl, dibenzofuranyl, azacarbazolyl, azafuorenyl, azadibenzothiophyl, azadibenzothienyl, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, oxadiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzothiazolyl, benzoxadiazolyl, benzothiadiazolyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indenocarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothienocarbazolyl, benzothianocarbazolyl, benzothianocarbazolyl, benzofuranonaphthofuranyl, benzothianonaphthothienyl, benzothianonaphthothianolyl, benzofuranodibenzofuranyl, benzofuranodibenzothienyl, and / or benzothienodibenzothienyl, and the like. The term "divalent non-aromatic fused heteropolycyclic group" as used herein refers to a divalent group having the same structure as a monovalent non-aromatic fused heteropolycyclic group.

[0270] The term "C6-Ci8aryl" as used herein indicates an aromatic carbocyclic group having 6 to 18 carbon atoms, such as, for example, C6-Ci0aryl, C6-C12aryl, C6-Ci4aryl, C6-Ci6aryl, C6-Ci8aryl, and the like. Examples of C6-Ci8aryl groups are phenyl, naphthyl, and the like. The term "C6-Ci8aryl" as used herein indicates an aromatic carbocyclic group having 6 to 18 carbon atoms, such as, for example, C6-Ci0aryl, C6-Ci2aryl, C6-Ci4aryl, C6-Ci6aryl, C6-Ci8aryl, and the like. Examples of C6-Ci8aryl groups are phenyl, naphthyl, and the like. 60 The term "C6-Ci8aryloxy" as used herein indicates -OA 102 (wherein A 102 is C6-C 60 aryl), such as, for example, C6-Ci0aryloxy, C6-Ci2aryloxy, C6-Ci4aryloxy, C6-Ci6aryloxy, C6-Ci8aryloxy, and the like. Examples of C6-Ci8aryloxy groups are phenyloxy, naphthyloxy, and the like. 50 The term "C6-Ci8aryloxy" as used herein indicates -OA 40 The term "C6-Ci8aryloxy" as used herein indicates -OA 30 The term "C6-Ci8aryloxy" as used herein indicates -OA 20 The term "C6-Ci8aryloxy" as used herein indicates -OA 15 The term "C6-Ci8aryloxy" as used herein indicates -OA 60 The term "C6-Ci8aryloxy" as used herein indicates -OA 103 The term "C6-Ci8aryloxy" as used herein indicates -OA 103 The term "C6-Ci8aryloxy" as used herein indicates -OA 60 The term "C6-Ci8aryloxy" as used herein indicates -OA 50 The term "C6-Ci8aryloxy" as used herein indicates -OA 40 The term "C6-Ci8aryloxy" as used herein indicates -OA 30 The term "C6-Ci8aryloxy" as used herein indicates -OA 20 The term "C6-Ci8aryloxy" as used herein indicates -OA 15 The term "C6-Ci8aryloxy" as used herein indicates -OA

[0271] The term "C7-Ci8aralkyl" as used herein indicates -A 60 A 104 A 105 The term "C7-Ci8aralkyl" as used herein indicates -A 104 The term "C7-Ci8aralkyl" as used herein indicates -A 54 The term "C7-Ci8aralkyl" as used herein indicates -A105 For C6-C 59 Aryl), for example, C7-C 50 Aryl group, C7-C 40 Aryl group, C7-C 30 Aryl group, C7-C 20 Aryl or C7-C 15 Araneyl groups, and the term "C2-C" as used herein. 60 "Heteroaryl" refers to -A 106 A 107 (where A) 106 For C1-C 59 Alkylene, and A 107 For C1-C 59 (Heteroaryl), for example, C2-C 50 Heteroaryl, C2-C 40 Heteroaryl, C2-C 30 Heteroaryl, C2-C 20 Heteroaryl or C2-C 15 Heteroaryl alkyl groups.

[0272] As used in this article, the term "R" 10a "Can be:

[0273] Deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro;

[0274] Each of the following C1-C that is not substituted or is substituted: 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl or C1-C 60 Alkoxy groups: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 carbonyl group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 Heteroaryl, -Si(21)(Q 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 ) or any combination thereof;

[0275] Each of the following C3-Cs that are not substituted or are substituted: 60 carbonyl group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl or C2-C 60 Heteroalkyl groups: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 carbonyl group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 Heteroaryl, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 ) or any combination thereof; or

[0276] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0277] Q1, Q 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each can be independently represented as: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C60 alkenyl; C2-C 60 alkynyl; C1-C 60 alkoxy; or each unsubstituted or substituted with deuterium, -F, cyano, C1-C 60 alkyl, C1-C 60 alkoxy, phenyl, biphenyl, or any combination thereof. Substituted phenyl is phenyl substituted with C1-C 60 carbocyclyl, C1-C 60 heterocyclyl, C7-C 60 aralkyl, or C2-C 60 heteroaralkyl.

[0278] The term "heteroatom" as used herein refers to any atom other than a carbon atom and a hydrogen atom. Examples of heteroatoms include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0279] The term "transition metal" as used herein includes hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), and / or gold (Au), etc.

[0280] The term "Ph" as used herein refers to phenyl, the term "Me" as used herein refers to methyl, the term "Et" as used herein refers to ethyl, the term "tert-Bu" or "Bu t " as used herein refers to tert-butyl, and the term "OMe" as used herein refers to methoxy.

[0281] The term "biphenyl" as used herein refers to "phenyl substituted with phenyl." In other words, "biphenyl" can be phenyl having C6-C 60 phenyl substituted with C6-C

[0282] The term "terphenyl" as used herein refers to "phenyl substituted with biphenyl." "Terphenyl" is C6-C 60 phenyl substituted with C6-C 60 phenyl substituted with C6-C

[0283] The number of carbon atoms in a substituent definition is exemplary. For example, in C1-C 60 alkyl, the number of carbon atoms is exemplary of 60, and for C1-C 60 alkyl, the definition likewise applies to C1-C 20 alkyl. The same is true for other cases.

[0284] Unless otherwise defined, the symbols * and *' as used herein each refer to the bonding site to the adjacent atom in the corresponding formula.

[0285] Terms such as "substantially," "about," and "approximately" are utilized herein to account for inherent variations in measuring or calculating values. They are intended to encompass variations that would be recognized by those of ordinary skill in the art as equivalent to the recited value. For example, "about" can mean one or more standard deviations, or a ± 30%, ± 20%, ± 10%, or ± 5% deviation from the stated value.

[0286] Numerical ranges recited herein are inclusive and are intended to include all sub-ranges combining an upper value with a lower value, to the same extent as if each and every stated sub-range were expressly stated. For example, a range of "1.0 to 10.0" is intended to include all sub-ranges between (and including) the recited minimum and maximum values, for example, such as 2.4 to 7.6, etc. Applicant reserves the right to amend this specification, including the claims, to expressly recite any sub-range including any value within the stated ranges.

[0287] The electronic device, the light emitting apparatus, the apparatus for manufacturing the same, and / or any other related apparatus or component according to embodiments of the present disclosure described herein can be implemented using any suitable hardware, firmware (e.g., application specific integrated circuit), software, or combination thereof. For example, one or more suitable components of the electronic device and / or the light emitting apparatus can be formed on one integrated circuit (IC) chip or on separate IC chips. Further, one or more suitable components of the electronic device and / or the light emitting apparatus can be implemented on a flexible printed circuit film, a tape carrier package (TCP), or a printed circuit board (PCB), or formed on one substrate. Further, one or more suitable components of the electronic device and / or the light emitting apparatus can be a process or thread running on one or more processors in one or more computing devices, which executes computer program instructions to perform one or more suitable functions described herein. The computer program instructions are stored in a memory, which can be implemented in the computing device using a standard memory device, such as, for example, a random access memory (RAM). The computer program instructions can also be stored in another non-transitory computer readable medium, such as, for example, a CD-ROM and / or a flash drive, etc. Also, those skilled in the art will recognize that the functionality of one or more suitable computing devices can be combined or integrated into a single computing device, or the functionality of dedicated computing devices can be distributed across one or more other computing devices, without departing from the scope of embodiments of the present disclosure.

[0288] In the specification, "an integer selected from 0 to 20" means an integer selected from 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, and 20. The above description of the numerical range is equally applicable to any numerical range appearing in the specification, for example, an integer selected from 0 and 1, an integer selected from 0 to 2, an integer selected from 0 to 3, an integer selected from 0 to 4, an integer selected from 0 to 5, an integer selected from 0 to 6, an integer selected from 0 to 7, an integer selected from 0 to 8, an integer selected from 0 to 9, an integer selected from 0 to 10, an integer selected from 0 to 11, an integer selected from 0 to 12, an integer selected from 0 to 13, an integer selected from 0 to 14, an integer selected from 0 to 15, an integer selected from 0 to 16, an integer selected from 0 to 17, an integer selected from 0 to 18, and an integer selected from 0 to 19, and the like.

[0289] Hereinafter, the compound and the light-emitting device according to one or more embodiments are described in detail with reference to the following examples.

[0290] Example

[0291] Preparation of precursor

[0292] 0.5M indium laurate [In(LA)3]: indium acetate (In(OAc)3) and lauric acid were dissolved in 1-octadecene (ODE) at a molar ratio of 1:3 to form a mixture in a single-neck flask, and the mixture was allowed to react under vacuum at 110°C for about 4 hours.

[0293] 0.5M gallium laurate [Ga(LA)3]: lauric acid was dissolved in ODE to form a mixture in a three-neck flask, and the mixture was allowed to react in vacuum at 110°C for 30 minutes. Next, after purging the three-neck flask with nitrogen, 1M trimethylgallium [a first gallium precursor having a monomer structure dissolved in trioctylphosphine (TOP)] was injected into the three-neck flask (molar ratio of trimethylgallium to lauric acid was 1:3). Then, the mixture was allowed to react at 200°C for 30 minutes and to stand under vacuum at 110°C for at least 30 minutes.

[0294] Manufacture of quantum dot core

[0295] Example 1

[0296] Sixteen milliliters (mL) of ODE and 2 millimoles (mmol) of zinc stearate (Zn(St)2) were added to a three-necked flask and left under vacuum at 110 °C for 30 minutes. After purging the three-necked flask with nitrogen, 2 mL of prepared 0.5 M indium laurate and 2 mL of prepared 0.5 M gallium laurate (each corresponding to 1 mmol) were injected into the three-necked flask. After leaving the three-necked flask under vacuum for 30 minutes, the three-necked flask was purged with nitrogen. The mixture was allowed to react at 300 °C for 1 hour, and then, the reaction temperature was decreased to 110 °C. The three-necked flask was left under vacuum for 30 minutes. After purging the three-necked flask with nitrogen again, 3 mL of tris(trimethylsilyl)phosphine (TMS3P, 10 wt%) dissolved in TOP was injected into the three-necked flask and the mixture was allowed to react for 20 minutes. Next, the reaction temperature was increased to 300 °C for a 5-minute reaction, and then, the temperature was decreased to room temperature to terminate the reaction to prepare quantum dot cores.

[0297] Comparative Example 1

[0298] Quantum dot cores were fabricated in substantially the same manner as Example 1 except that GaI3 was used instead of trimethylgallium (TMGa).

[0299] UV absorption spectrum evaluation

[0300] The UV absorption spectrum of each of the quantum dot cores of Example 1 and Comparative Example 1 was measured in a region ranging from 300 nanometers (nm) to 700 nm, and the results are shown in Figure 1 and Figure 2 respectively. The feed ratio refers to the molar ratio of Ga:In of the reaction.

[0301] Referring to Figure 1 and Figure 2 , it can be seen that the valley-to-peak ratio of the 1S peak of the quantum dot cores of Example 1 was about 0.86, and the valley-to-peak ratio of the 1S peak of the quantum dot cores of Comparative Example 1 was about 1.10.

[0302] Therefore, it can be seen that the quantum dot cores of Example 1 were more uniform than the quantum dot cores of Comparative Example 1.

[0303] Example 2

[0304] Quantum dot cores were fabricated in substantially the same manner as Example 1 except that the feed ratio of Ga:In was set to 1:3 instead of 1:1.

[0305] Comparative Example 2

[0306] Quantum dot cores were fabricated in substantially the same manner as Comparative Example 1 except that the feed ratio of Ga:In was set to 1:3 instead of 1:1.

[0307] Gallium content comparison

[0308] The gallium (Ga) content ratio of the quantum dot core of Example 1 and Example 2 and Comparative Example 1 and Comparative Example 2 was implemented by inductively coupled plasma (ICP) spectroscopy analysis, and the results are shown in Figure 3 .

[0309] By comparing the ICP spectroscopy results of Example 1 and Comparative Example 1, it can be seen that the quantum dot core of Example 1 is doped with more Ga than the quantum dot core of Comparative Example 1.

[0310] Referring to Figure 3 , it can be seen that both Example 1 and Example 2 have a higher Ga content ratio than the Ga content ratio of Comparative Example 1 and Comparative Example 2. Therefore, it can be seen that even when the ratio of Ga reacted is increased, the quantum dot core of the example is doped with more Ga than the quantum dot core of the comparative example.

[0311] The ICP spectroscopy analysis was performed by using Agilent ICP-MS 7700S.

[0312] XRD Comparison

[0313] XRD analysis was performed on each of the quantum dot cores of Example 1 and Comparative Example 1, and the results are shown in Figure 4 .

[0314] The InP reference peak and the GaP reference peak were compared with the peak of each quantum dot core.

[0315] It can be seen that the peak of Example 1 is more tilted toward the GaP peak than the peak of Comparative Example 1. From this, it can be seen that the Ga component ratio in the quantum dot core of Example 1 is higher than the Ga component ratio in the quantum dot core of Comparative Example 1, indicating that a greater amount of Ga doping is achieved in the quantum dot core of Example 1 than in the quantum dot core of Comparative Example 1.

[0316] The XRD was measured by Ultima IV manufactured by RIGAKU.

[0317] Quantum Dot Manufacture

[0318] Example 3

[0319] In the latter half of Example 1, after the reaction was performed at 300℃ for 5 minutes, 0.5mL of 2M trioctylphosphine sulfide (TOP-S) was added dropwise at 300℃, and the reaction was terminated without lowering the reaction temperature. Next, the reaction was performed for 30 minutes, and then the reaction temperature was lowered to room temperature to terminate the reaction.

[0320] Comparative Example 3

[0321] In the latter part of Comparative Example 1, after the reaction was carried out at 300°C for 5 minutes, 0.5 mL of 2M TOP-S was added dropwise at 300°C without lowering the reaction temperature to terminate the reaction. The reaction was then carried out for 30 minutes, and then the reaction temperature was lowered to room temperature to terminate the reaction.

[0322] With In 1-x Ga x UV absorption and photoluminescence (PL) spectra of P / ZnS core / shell quantum dots

[0323] The UV absorption spectrum and PL spectrum of the quantum dots in Example 3 were measured, and the results are shown in... Figure 5 middle.

[0324] refer to Figure 5 It can be seen that, with Figure 1 Compared to the spectrum of the quantum dot core in Example 1, the UV absorption spectrum of the quantum dot in Example 3 shows a red shift, confirming the formation of a 1S peak at wavelengths from 420 nm to 430 nm. In some embodiments, it is evident that the size uniformity of the quantum dot is improved as the valley-to-peak ratio of the quantum dot in Example 3 decreases from 0.86 for the quantum dot core in Example 1 to 0.66.

[0325] As a result of measuring the PL spectrum of the quantum dot in Example 3, the PL peak formed around 480 nm and reached the blue emission region. The full width at half maximum (FWHM) was 38 nm, which is close to the FWHM value of comparable (existing) and currently being produced (e.g., recent) blue InGaP quantum dots. These results correspond well to the high uniformity indicated by the low peak-to-valley ratio of the quantum dot core described herein.

[0326] UV absorption and PL spectra were measured using a SHIMADZU UV-2600 and a Hamamatsu C11347-11.

[0327] The peak-to-valley ratio (V / P ratio) and quantum dot core size of Example 1 and Comparative Example 1, and the maximum emission wavelength, peak-to-valley ratio (V / P ratio), FWHM, and quantum dot size of Example 3 and Comparative Example 3 are shown in Table 1. The particle size of Example 1 and Comparative Example 1 is the quantum dot core size, and the particle size of Example 3 and Comparative Example 3 is the quantum dot size.

[0328] Table 1

[0329]

[0330] As can be seen from Table 1, the quantum dot cores and quantum dots of the embodiments are superior to those of the comparative examples.

[0331] According to one or more embodiments, the light emitting device can be manufactured using a known method by applying quantum dots to the emission layer, and thus a detailed description thereof is omitted.

[0332] The quantum dot core according to one or more embodiments has high size uniformity, and the quantum dot including the quantum dot core can have a FWHM of an emission peak of 40 nm or less.

[0333] In the context of the present application, and unless otherwise limited, the terms "use", "using", and "used" can be considered synonymous with the terms "utilize", "utilizing", and "utilized", respectively.

[0334] The present disclosure is considered in its entirety, those of ordinary skill in the art will recognize that each of the appropriate features of one or more appropriate embodiments of the present disclosure can be combined, in part or in whole, with each other, and can be technically interlocked and operated in one or more appropriate manners, and each embodiment can be implemented independently of each other or in any appropriate manner in combination with each other, unless otherwise described or implied.

[0335] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as being applicable to other similar features or aspects within other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details can be made therein without departing from the spirit and scope as defined by the following claims and their equivalents.

Claims

1. A method of making a quantum dot core, comprising: from a first gallium precursor and a C1-C 18 a fatty acid forms a second gallium precursor, the first gallium precursor having a monomeric structure; reacting the second gallium precursor, the indium precursor, and the zinc precursor to form a resulting product; and reacting the resulting product and a phosphorus precursor.

2. The method of claim 1, wherein: the first gallium precursor comprises gallium and a ligand, and wherein the ligand comprises a C1-C 60 alkyl, C5-C 60 1,3-diketone, or any combination thereof.

3. The method of claim 2, wherein: said C1-C 60 Alkyl includes methyl, ethyl, isobutyl, isopropyl, tert-butyl, or any combination thereof.

4. The method of claim 2, wherein: said C5-C 60 1,3-diketones include acetylacetone, dibenzoylmethane, 1,3-cyclohexanedione, 5,5-dimethyl-1,3-cyclohexanedione, or any combination thereof.

5. The method of claim 1, wherein: the first gallium precursor comprises trimethyl gallium, triethyl gallium, triisobutyl gallium, triisopropyl gallium, tri-tert-butyl gallium, acetylacetonate gallium, or any combination thereof.

6. The method of claim 1, wherein: said C1-C 18 fatty acids include C1-C 18 saturated fatty acids, C1-C 18 unsaturated fatty acids, or any combination thereof.

7. The method of claim 1, wherein: said C1-C 18 Fatty acids include lauric acid, oleic acid, palmitic acid, stearic acid, myristic acid, or any combination thereof.

8. The method of claim 1, wherein: the second gallium precursor comprises gallium laurate, gallium oleate, gallium palmitate, gallium stearate, gallium myristate, or any combination thereof.

9. The method of claim 1, wherein: forming the second gallium precursor comprises a heating process.

10. The method of claim 1, wherein: the indium precursor comprises indium laurate, indium oleate, indium palmitate, indium stearate, indium myristate, or any combination thereof.

11. The method of claim 1, wherein: the zinc precursor comprises zinc laurate, zinc oleate, zinc palmitate, zinc stearate, zinc myristate, or any combination thereof.

12. The method of claim 1, wherein: reacting the second gallium precursor, the indium precursor, and the zinc precursor comprises a heating process.

13. The method of claim 1, wherein: the phosphorus precursor comprises tris(trimethylsilyl)phosphine and / or tris(dimethylamino)phosphine.

14. The method of claim 1, wherein: reacting the resulting product and the phosphorus precursor comprises a heating process.

15. A quantum dot core made by the method of any one of claims 1-14.

16. The quantum dot core of claim 15, wherein: a valley-to-peak ratio in an ultraviolet absorption spectrum of the quantum dot core is less than 1.

17. A quantum dot, comprising: a quantum dot core according to claim 15 or 16 and a shell, wherein the quantum dots have In 1-x Ga x P / ZnS core / shell structure, 0 < x < 1.

18. The quantum dot of claim 17, wherein: a valley-to-peak ratio in an ultraviolet absorption spectrum of the quantum dot is at most 0.

9.

19. The quantum dot of claim 17, wherein: a full width at half maximum at 480 nm in an emission spectrum of the quantum dot is at most 40 nanometers.

20. A light emitting device, comprising: a first electrode; a second electrode opposite the first electrode; and a sandwich between the first electrode and the second electrode and comprising an emissive layer, wherein the emissive layer comprises a quantum dot according to any one of claims 17-19.

21. An electronic device comprising the light emitting device of claim 20.

22. The electronic device of claim 21, wherein the electronic device is a display, a light source, a lighting device, a personal computer, a personal mobile computer, a mobile phone, a digital camera, an electronic organizer, an electronic dictionary, an electronic game, a medical tool, a fish finder, a measuring tool, a meter, a projector, a smart phone, a television, a monitor, a tablet computer, an electric vehicle, a tablet personal computer, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player, a navigation device, an ultra personal mobile computer, a laptop computer, a billboard, an Internet of Things device, a smart watch, a watch phone, or a head-mounted display.

Images