Substrate deposition apparatus and substrate deposition method using the same

Abstract

Disclosed are a substrate deposition apparatus and a substrate deposition method using the same. The substrate deposition method includes: placing a substrate in a substrate deposition apparatus; and performing a deposition process on the substrate in the substrate deposition apparatus. The substrate deposition apparatus includes: a process chamber having a process space; a stage in the process chamber and configured to support the substrate; and a deposition source module. The deposition source module includes: a plurality of first deposition sources arranged in a first direction which is a horizontal direction; a plurality of second deposition sources arranged along the first direction; a plurality of third deposition sources arranged along the first direction; and a plurality of fourth deposition sources arranged along the first direction. The step of performing the deposition process on the substrate comprises the following steps: heating the deposition source module; and moving the deposition source module in a direction parallel to a second direction, the second direction being a horizontal direction intersecting the first direction.

Description

[0001] Cross Reference to Related Applications

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2024-0095904, filed on July 19, 2024, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. TECHNICAL FIELD

[0003] Aspects of embodiments of the present disclosure relate to a substrate deposition apparatus and a substrate deposition method using the same. BACKGROUND

[0004] Electronic devices such as smartphones, digital cameras, notebook computers, navigation devices, and smart televisions that provide images to users include display devices to display images. The display devices generate images and provide the generated images to users through display screens.

[0005] Display devices are manufactured through various processes. As an example, display devices are manufactured through a deposition process for a substrate, an etching process, and a cleaning process. In the deposition process for a substrate, a layer is formed on a surface of a substrate by heating a deposition source, and the layer can include two or more materials. SUMMARY

[0006] Embodiments of the present disclosure provide a substrate deposition apparatus configured to implement various deposition structures and a substrate deposition method using the same.

[0007] Embodiments of the present disclosure also provide a substrate deposition apparatus that improves the lifespan of a product and a substrate deposition method using the same.

[0008] Embodiments of the present disclosure also provide a substrate deposition apparatus configured to perform a deposition process on an entire substrate at once through a linear deposition method and a substrate deposition method using the same.

[0009] According to an embodiment of the disclosure, a substrate deposition method includes placing a substrate in a substrate deposition apparatus, and performing a deposition process on the substrate in the substrate deposition apparatus. The substrate deposition apparatus includes a process chamber having a process space, a stage in the process chamber and configured to support the substrate, and a deposition source module. The deposition source module includes a plurality of first deposition sources arranged along a first direction that is a horizontal direction, a plurality of second deposition sources arranged along the first direction, a plurality of third deposition sources arranged along the first direction, and a plurality of fourth deposition sources arranged along the first direction. The performing the deposition process on the substrate includes heating the deposition source module, and moving the deposition source module in a direction parallel to a second direction that is a horizontal direction intersecting the first direction.

[0010] According to an embodiment of the disclosure, a substrate deposition method includes placing a substrate in a substrate deposition apparatus, and performing a deposition process on the substrate in the substrate deposition apparatus. The substrate deposition apparatus includes a process chamber having a process space, a stage in the process chamber and configured to support the substrate, and a deposition source module. The deposition source module includes a plurality of first deposition sources arranged along a first direction that is a horizontal direction, a plurality of second deposition sources arranged along the first direction, a plurality of third deposition sources arranged along the first direction, and a plurality of fourth deposition sources arranged along the first direction. The performing the deposition process on the substrate includes heating the deposition source module, and moving the deposition source module in a direction parallel to a second direction that is a horizontal direction intersecting the first direction.

[0011] According to an embodiment of the disclosure, a substrate deposition apparatus includes a process chamber having a process space, a stage in the process chamber and configured to support a substrate, and a deposition source module. The deposition source module includes a plurality of first deposition sources arranged along a first direction that is a horizontal direction, a plurality of second deposition sources arranged along the first direction, a plurality of third deposition sources arranged along the first direction, and a plurality of fourth deposition sources arranged along the first direction. The second deposition sources are spaced apart from the first deposition sources in a direction parallel to a second direction intersecting the first direction.

[0012] According to embodiments of the disclosure, various deposition structures are implemented using a substrate deposition apparatus and a substrate deposition method using the substrate deposition apparatus.

[0013] According to embodiments of the disclosure, the lifetime of a product is improved by using a substrate deposition apparatus and a substrate deposition method using the substrate deposition apparatus.

[0014] According to embodiments of the present disclosure, by using a substrate deposition apparatus and a linear deposition method using the substrate deposition apparatus, a deposition process is performed on the entire substrate at once. BRIEF DESCRIPTION OF DRAWINGS

[0015] The above and other aspects and features of the present disclosure will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, by the way of which:

[0016] Figure 1 is a cross-sectional view of a substrate deposition apparatus according to an embodiment of the present disclosure;

[0017] Figure 2 is a cross-sectional view of a substrate deposition apparatus according to an embodiment of the present disclosure;

[0018] Figure 3 is a cross-sectional view of a deposition source module according to an embodiment of the present disclosure;

[0019] Figure 4 is an enlarged cross-sectional view of a region X in Figure 3

[0020] Figure 5 is a plan view of a deposition source module according to an embodiment of the present disclosure;

[0021] Figure 6 is an enlarged plan view of a region Y in Figure 5

[0022] Figure 7 is a flowchart illustrating steps of a substrate deposition method according to an embodiment of the present disclosure;

[0023] Figures 8 to 11 is a diagram illustrating steps of a substrate deposition method according to an embodiment described in Figure 7

[0024] Figure 12 is a cross-sectional view of a deposition source module according to an embodiment of the present disclosure;

[0025] Figure 13 is a cross-sectional view of a deposition source module according to an embodiment of the present disclosure; and

[0026] Figure 14 is a cross-sectional view of a deposition source module according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0027] ​​​It will be understood that when an element or layer is referred to as being “on” another element or layer, “connected to” or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer, or one or more intervening elements or layers can also be present. In contrast, when an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present. By way of example, when a first element is described as “coupled” or “connected” to a second element, it can be directly coupled or connected to the second element or it can be indirectly coupled or connected to the second element via one or more intervening elements.

[0028] In the figures, the size of various elements, layers, etc., can be exaggerated for clarity. Like reference numbers signify like elements in all figures. As used in herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. In addition, use of “may” in the description of a disclosed embodiment(s) relates to “one or more disclosed embodiments” of the disclosure. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. For example, the expressions “at least one of a, b, and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c. As used herein, the term “use” can be considered synonymous with the term “utilize.” As used herein, the terms “substantially,” “about,” and similar terms are used as approximating terms and not as terms of degree, and are intended to account for the inherent variations in measurements or calculations that would be recognized by those of ordinary skill in the art.

[0029] It will be understood that, although the terms “first,” “second,” “third,” etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of example embodiments.

[0030] For purposes of the description hereinafter, spatial or directional terms, such as "below," "lower," "bottom," "above," "upper," and the like, can be used with reference to the illustrated embodiment. However, it will be understood that no absolute directions are intended by the use of these terms. Rather, these terms are used for convenience and are intended to be correlated with the directional illustrations in the respective views. In addition, terms such as "first" and / or "second" can be used herein to describe various components. Such terminology can be used as an arbitrary device convention for purposes of this description and thus, is not intended to convey any meaning beyond that of the intended use of such terms in the respective contexts.

[0031] The terminology used herein is for the purpose of describing embodiments of the present disclosure and is not intended to be limiting of the present disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0032] Those of ordinary skill in the art will appreciate that, in light of the full disclosure and detailed description of the present disclosure herein, each appropriate feature of the various embodiments of the present disclosure can be combined, in part or in whole, with each other, and can be interlocked and operated in various appropriate manners in technology, and unless otherwise stated or implied, each embodiment can be implemented independently of each other or in any appropriate manner in combination with each other.

[0033] Further, any numerical ranges herein are intended to include all sub-ranges of the same whole number recited, as implicitly disclosed as being within the range. For example, a range from 1.0 to 10.0 should be read to include a range from a limit of 1.0 to a limit of 10.0, that is, all sub-ranges beginning with either 1.0 or 10.0 or in between are intended to be encompassed. Any maximum numerical limitation should be read as a minimum and any minimum numerical limitation should be read as a maximum. In this disclosure and

[0034] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0035] Hereinafter, embodiments of a substrate deposition apparatus and a substrate deposition method using the same according to the present disclosure will be described with reference to the accompanying drawings.

[0036] Figure 1 is a cross-sectional view of a substrate deposition apparatus SA according to an embodiment of the present disclosure, and Figure 2 is a cross-sectional view of a substrate deposition apparatus SA according to an embodiment of the present disclosure.

[0037] Hereinafter, D1 is referred to as a first direction, D2 crosses (e.g., intersects) the first direction D1 and is referred to as a second direction, and D3 crosses (e.g., intersects) each of the first direction D1 and the second direction D2 and is referred to as a third direction. The third direction D3 can be referred to as a vertical direction. In addition, each of the first direction D1 and the second direction D2 can be referred to as a horizontal direction.

[0038] Referring to Figure 1 and Figure 2 A substrate deposition apparatus SA can be provided. The substrate deposition apparatus SA can be a chamber in which a deposition process is performed on a substrate. For example, the substrate deposition apparatus SA can be an apparatus that heats a deposition source (e.g., a deposition material) and forms a deposition layer on a substrate to manufacture a display device. The substrate deposition apparatus SA can include a process chamber 1, a stage 3, and a deposition source module 5.

[0039] The process chamber 1 can include (or can form) a process space 1h. The process space 1h can be separated from an external space by the process chamber 1. A deposition process can be performed on a substrate in the process space 1h. The process space 1h can be maintained in a vacuum state during a deposition process for a substrate in the process space 1h. For this purpose, the process space 1h can be connected to a vacuum pump, however, the present disclosure should not be limited to this or be limited thereby.

[0040] The stage 3 can be placed (or disposed) in the process chamber 1. The stage 3 can support (e.g., can suspend) a substrate. When the substrate is disposed on the stage 3, a deposition process can be performed on the substrate. When the substrate is disposed on the stage 3, a hole (e.g., an opening) can be formed through the center of the stage 3 to expose a lower surface of the substrate downward. Two stages 3 can be provided in one process space 1h. For example, referring to Figure 1A first station 31 and a second station 33 can be provided. The first station 31 and the second station 33 can be arranged spaced apart from each other in the first direction D1. When a substrate is arranged on each of the first station 31 and the second station 33, a deposition process can be performed. When two substrates are placed in one process chamber 1, a deposition process can be performed on both substrates simultaneously or jointly. However, for the sake of illustration, embodiments will be described below in which the station 3 is single.

[0041] The deposition source module 5 can be placed in the process space 1h. For example, the deposition source module 5 can be arranged underneath the station 3. The deposition source module 5 can be movable in one or two horizontal directions. As an example, the deposition source module 5 can be movable in the second direction D2. Accordingly, the deposition source module 5 can be connected to a deposition source drive arrangement (e.g., a deposition source driver). A deposition process can be performed on a substrate while the deposition source module 5 is moving. A deposition material evaporated from the deposition source module 5 can be deposited on the substrate to form a deposition layer. This will be described in more detail later. One deposition source module 5 can be provided in one process chamber 1. For example, for a deposition process in which a deposition material is evaporated from a plurality of deposition sources, one deposition source module 5 can be provided in one process chamber 1. For example, for a deposition process in which a deposition material is evaporated from a plurality of deposition sources, one deposition source module 5 can be provided in one process chamber 1. Figure 1 For the embodiments shown in FIG. 1, a deposition process can be performed on substrates arranged on the two stations 31 and 33, respectively, by using one deposition source module 5. For this purpose, the deposition source module 5 can be movable in the first direction D1. However, the present disclosure should not be limited thereto or thereby. According to an embodiment, two deposition source modules can be provided. The deposition source module 5 will be described in more detail later.

[0042] Figure 3 is a cross-sectional view of a deposition source module according to an embodiment of the present disclosure, and Figure 4 is a cross-sectional view of a deposition source module according to an embodiment of the present disclosure, and Figure 3 is an enlarged cross-sectional view of the region X in FIG. 1.

[0043] Referring to Figure 3 and Figure 4 The deposition source module 5 can include a first deposition source 51, a second deposition source 52, a third deposition source 53, a fourth deposition source 54, and a module housing 59.

[0044] The first deposition source 51 can include a first deposition case 511, a first nozzle 513, a first deposition material 519, a first blocking member 515, and a first heater 517. The first deposition case 511 can provide (or can form) a first storage space. The first deposition material 519 can be stored in the first deposition case 511. The first nozzle 513 can be placed on the first deposition case 511. The first nozzle 513 can be connected to (e.g., can be in fluid communication with) the first storage space in the first deposition case 511. The first deposition material 519 stored in the first storage space can be discharged to the outside of the first deposition case 511 through the first nozzle 513. The first deposition material 519 can be filled in the first deposition case 511. When the first deposition material 519 in the first deposition case 511 is heated, at least a portion of the first deposition material 519 can be evaporated. The evaporated first deposition material 519 can be discharged to the outside through the first nozzle 513. The first deposition material 519 can include, for example, Alq3 (Al(C9H6NO)3); however, the present disclosure should not be limited thereto or thereby. The first blocking member 515 can be disposed above the first deposition case 511. The first blocking member 515 can include a first blocking plate 5151 and a first support member 5153. The first blocking plate 5151 can be disposed above the first nozzle 513. For example, the first blocking plate 5151 can be placed to be spaced upwardly from (e.g., can be arranged to be vertically spaced from) the first nozzle 513. The first blocking plate 5151 can have a first blocking hole (e.g., a first blocking opening) 5151h. The first blocking hole 5151h can be through (e.g., can extend through) the first blocking plate 5151 from top to bottom. When viewed in a planar surface, the first blocking hole 5151h can have a rectangular shape; however, the present disclosure should not be limited thereto or thereby. The first blocking hole 5151h can have a first width (or a first diameter) w1. The first support member 5153 can support the first blocking plate 5151. The first heater 517 can surround (e.g., can extend around) the first deposition case 511. The first deposition material 519 in the first deposition case 511 can be heated by the first heater 517.

[0045] The second deposition source 52 can include a second deposition housing 521, a second nozzle 523, a second deposition material 529, a second blocking member 525, and a second heater 527. The second deposition housing 521 can provide (or can form) a second storage space. The second deposition material 529 can be stored in the second deposition housing 521. The second nozzle 523 can be placed on the second deposition housing 521. The second nozzle 523 can be connected to (e.g., can be in fluid communication with) the second storage space in the second deposition housing 521. The second deposition material 529 stored in the second storage space can be discharged to the outside of the second deposition housing 521 through the second nozzle 523. The second deposition material 529 can be filled in the second deposition housing 521. When the second deposition material 529 in the second deposition housing 521 is heated, at least a portion of the second deposition material 529 can be evaporated. The evaporated second deposition material 529 can be discharged to the outside through the second nozzle 523. The second deposition material 529 can include a material different from that of the first deposition material 519; however, the present disclosure is not to be limited thereto or thereby. The second blocking member 525 can be placed above the second deposition housing 521. The second blocking member 525 can include a second blocking plate 5251 and a second support member 5253. The second blocking plate 5251 can be placed above the second nozzle 523. For example, the second blocking plate 5251 can be placed to be spaced apart upwardly from (e.g., can be arranged to be spaced apart vertically from) the second nozzle 523. The second blocking plate 5251 can have a second blocking hole (e.g., a second blocking opening) 5251h. The second blocking hole 5251h can be through (e.g., can extend through) the second blocking plate 5251 from the top to the bottom. When viewed in a planar surface, the second blocking hole 5251h can have a rectangular shape; however, the present disclosure is not to be limited thereto or thereby. The second blocking hole 5251h can have a second width (or a second diameter) w2. The second width w2 can be different from the first width w1. In one embodiment, the second width w2 can be greater than the first width w1. The second support member 5253 can support the second blocking plate 5251. The second heater 527 can surround (e.g., can extend around) the second deposition housing 521. The second deposition material 529 in the second deposition housing 521 can be heated by the second heater 527. The second heater 527 can be controlled independently of the first heater 517. Accordingly, the second deposition material 529 stored in the second deposition housing 521 can be heated at a different temperature from the first deposition material 519.

[0046] The third deposition source 53 can include a third deposition enclosure 531, a third nozzle 533, a third deposition material 539, a third blocking member 535, and a third heater 537. The third deposition enclosure 531 can provide (or can form) a third storage space. The third deposition material 539 can be stored in the third deposition enclosure 531. The third nozzle 533 can be placed on the third deposition enclosure 531. The third nozzle 533 can be connected to (e.g., can be in fluid communication with) the third storage space in the third deposition enclosure 531. The third deposition material 539 stored in the third storage space can be discharged to the outside of the third deposition enclosure 531 through the third nozzle 533. The third deposition material 539 can be filled in the third deposition enclosure 531. When the third deposition material 539 stored in the third deposition enclosure 531 is heated, at least a portion of the third deposition material 539 can be evaporated. The evaporated third deposition material 539 can be discharged to the outside through the third nozzle 533. The third deposition material 539 can include a material different from that of the first deposition material 519 and / or the second deposition material 529; however, the present disclosure is not to be limited thereto or thereby. The third blocking member 535 can be placed above the third deposition enclosure 531. The third blocking member 535 can include a third blocking plate 5351 and a third support member 5353. The third blocking plate 5351 can be placed above the third nozzle 533. For example, the third blocking plate 5351 can be placed to be spaced apart upwardly from (e.g., can be arranged to be spaced apart vertically from) the third nozzle 533. The third blocking plate 5351 can have a third blocking hole (e.g., a third blocking opening) 5351h. The third blocking hole 5351h can be through (e.g., can extend through) the third blocking plate 5351 from the top to the bottom. When viewed in a planar surface, the third blocking hole 5351h can have a rectangular shape; however, the present disclosure is not to be limited thereto or thereby. The third blocking hole 5351h can have a third width (or a third diameter) w3. The third width w3 can be different from each of the first width w1 and the second width w2. In one embodiment, the third width w3 can be greater than each of the first width w1 and the second width w2. The third support member 5353 can support the third blocking plate 5351. The third heater 537 can surround (e.g., can extend around) the third deposition enclosure 531. The third deposition material 539 stored in the third deposition enclosure 531 can be heated by the third heater 537. The third heater 537 can be controlled independently from each of the first heater 517 and the second heater 527. Accordingly, the third deposition material 539 stored in the third deposition enclosure 531 can be heated at a temperature different from the first deposition material 519 and / or the second deposition material 529.

[0047] The fourth deposition source 54 can include a fourth deposition housing 541, a fourth nozzle 543, a fourth deposition material 549, a fourth blocking member 545, and a fourth heater 547. The fourth deposition housing 541 can provide (or can form) a fourth storage space. The fourth deposition material 549 can be stored in the fourth deposition housing 541. The fourth nozzle 543 can be placed on the fourth deposition housing 541. The fourth nozzle 543 can be connected to (e.g., can be in fluid communication with) the fourth storage space in the fourth deposition housing 541. The fourth deposition material 549 stored in the fourth storage space can be discharged to the outside of the fourth deposition housing 541 through the fourth nozzle 543. The fourth deposition material 549 can be filled in the fourth deposition housing 541. When the fourth deposition material 549 stored in the fourth deposition housing 541 is heated, at least a portion of the fourth deposition material 549 can be evaporated. The evaporated fourth deposition material 549 can be discharged to the outside through the fourth nozzle 543. The fourth deposition material 549 can include a material different from that of the first deposition material 519. As an example, the fourth deposition material 549 can include a material substantially the same as or similar to that of the second deposition material 529; however, the present disclosure is not to be limited thereto or thereby. The fourth deposition material 549 can include a material different from that of the second deposition material 529. As an example, the material included in the fourth deposition material 549 can have a refractive index or light absorption rate different from that of the material included in the second deposition material 529. The fourth blocking member 545 can be placed above the fourth deposition housing 541. The fourth blocking member 545 can include a fourth blocking plate 5451 and a fourth support member 5453. The fourth blocking plate 5451 can be placed above the fourth nozzle 543. For example, the fourth blocking plate 5451 can be placed spaced apart upwardly from (e.g., can be arranged spaced apart vertically from) the fourth nozzle 543. The fourth blocking plate 5451 can have a fourth blocking hole (e.g., a fourth blocking opening) 5451h. The fourth blocking hole 5451h can be through (e.g., can extend through) the fourth blocking plate 5451 from the top to the bottom. When viewed in a planar surface, the fourth blocking hole 5451h can have a rectangular shape; however, the present disclosure is not to be limited thereto or thereby. The fourth blocking hole 5451h can have a fourth width (or a fourth diameter) w4. The fourth width w4 can be different from each of the first width w1 and the third width w3. As an example, the fourth width w4 can be substantially the same as or similar to the second width w2. The fourth support member 5453 can support the fourth blocking plate 5451. The fourth heater 547 can surround (e.g., can extend around) the fourth deposition housing 541. The fourth deposition material 549 stored in the fourth deposition housing 541 can be heated by the fourth heater 547. The fourth heater 547 can be controlled independently from each of the first heater 517, the second heater 527, and the third heater 537.Accordingly, the fourth deposition material 549 stored in the fourth deposition enclosure 541 can be heated at a different temperature than the first deposition material 519, the second deposition material 529, and / or the third deposition material 539.

[0048] The first deposition source 51, the second deposition source 52, the third deposition source 53, and the fourth deposition source 54 can be arranged along a direction parallel to the second direction D2. In one embodiment, the second deposition source 52 can be disposed spaced apart from the first deposition source 51 in a direction parallel to the second direction D2. However, the present disclosure should not be limited thereto or thereby, and in another embodiment, the second deposition source 52 and the first deposition source 51 can be adjacent to each other while being arranged along a direction parallel to the second direction D2.

[0049] The module enclosure 59 can surround the first deposition source 51, the second deposition source 52, the third deposition source 53, and the fourth deposition source 54. For example, the first deposition source 51, the second deposition source 52, the third deposition source 53, and the fourth deposition source 54 can be placed in (or arranged in) the module enclosure 59; however, the present disclosure should not be limited thereto or thereby. According to an embodiment, the first deposition source 51, the second deposition source 52, the third deposition source 53, and the fourth deposition source 54 can be coupled to each other without a separate module enclosure.

[0050] Figure 5 is a plan view of the deposition source module 5 according to an embodiment of the present disclosure, and Figure 6 is a plan view of the deposition source module 5 according to an embodiment of the present disclosure, and Figure 5 is an enlarged plan view of the region Y in

[0051] Referring to Figure 3 , Figure 5 and Figure 6 , the first deposition source 51 can be provided as a plurality. The first deposition source 51 can be arranged along the first direction D1. For example, the substrate deposition apparatus SA (see, for example, FIG. 1) can include a plurality of the first deposition sources 51 arranged along the first direction D1. Figure 1The deposition source module 5 of the substrate deposition apparatus SA (see, e.g., FIG. 1) can be a linear deposition module for linear deposition. When the first deposition sources 51 are provided as a plurality, the first nozzles 513 can also be provided as a plurality. The first nozzles 513 can be arranged along the first direction D1. Among the first deposition sources 51, a first distance DS1 (i.e., a separation distance in the first direction D1 between two first deposition sources 51 adjacent to an edge (or end) of the first blocker plate 5151) can be different from a second distance DS2 (i.e., a separation distance in the first direction D1 between two first deposition sources 51 at (or near) a center of the first blocker plate 5151). The first distance DS1 can be a distance in the first direction D1 between two first nozzles 513 adjacent to each other at an edge of the first blocker plate 5151. The second distance DS2 can be a distance in the first direction D1 between two first nozzles 513 adjacent to each other at (or near) a center of the first blocker plate 5151. The second distance DS2 can be greater than the first distance DS1. For example, the first distance DS1 can be less than the second distance DS2, and thus, the first deposition sources 51 can be more densely arranged at an edge of the first blocker plate 5151 than at a center of the first blocker plate 5151. However, for ease of illustration, embodiments in which the first deposition sources 51 have a single form are described below.

[0052] The second deposition sources 52 can be provided as a plurality. The second deposition sources 52 can be arranged along the first direction D1. For example, the substrate deposition apparatus SA (see, e.g., FIG. 1) can be a linear deposition module for linear deposition. When the second deposition sources 52 are provided as a plurality, the second nozzles 523 can also be provided as a plurality. The second nozzles 523 can be arranged along the first direction D1. Among the second deposition sources 52, a first distance DS1 (i.e., a separation distance in the first direction D1 between two second deposition sources 52 adjacent to an edge (or end) of the second blocker plate 5251) can be different from a second distance DS2 (i.e., a separation distance in the first direction D1 between two second deposition sources 52 at (or near) a center of the second blocker plate 5251). The first distance DS1 can be a distance in the first direction D1 between two second nozzles 523 adjacent to each other at an edge of the second blocker plate 5251. The second distance DS2 can be a distance in the first direction D1 between two second nozzles 523 adjacent to each other at a center of the second blocker plate 5251. The second distance DS2 can be greater than the first distance DS1. For example, the first distance DS1 can be less than the second distance DS2, and thus, the second deposition sources 52 can be more densely arranged at an edge of the second blocker plate 5251 than at a center of the second blocker plate 5251. However, for ease of illustration, embodiments in which the second deposition sources 52 have a single form are described below. Figure 1

[0053] ​Multiple third deposition sources 53 may be provided. The third deposition sources 53 may be arranged along the first direction D1. That is, the substrate deposition apparatus SA (see, for example...) Figure 1 The deposition source module 5 can be a linear deposition module for linear deposition. When multiple third deposition sources 53 are provided, multiple third nozzles 533 can also be provided. The third nozzles 533 can be arranged along a first direction D1. Among the third deposition sources 53, a first distance DS1 (i.e., the separation distance in the first direction D1 between two third deposition sources 53 adjacent to the edge of the third baffle plate 5351) can be different from a second distance DS2 (i.e., the separation distance in the first direction D1 between two third deposition sources 53 at (or near) the center of the third baffle plate 5351). The first distance DS1 can be the distance in the first direction D1 between two adjacent third nozzles 533 at the edge of the third baffle plate 5351. The second distance DS2 can be the distance in the first direction D1 between two adjacent third nozzles 533 at the center of the third baffle plate 5351. The second distance DS2 can be greater than the first distance DS1. For example, the first distance DS1 may be smaller than the second distance DS2, and therefore, the third deposition source 53 may be arranged more densely at the edge of the third barrier plate 5351 than at the center of the third barrier plate 5351. However, for ease of illustration, an embodiment of the third deposition source 53 having a single form is described below.

[0054] Multiple fourth deposition sources 54 may be provided. The fourth deposition sources 54 may be arranged along the first direction D1. That is, the substrate deposition apparatus SA (see, for example...) Figure 1 The deposition source module 5 can be a linear deposition module for linear deposition. When multiple fourth deposition sources 54 are provided, multiple fourth nozzles 543 can also be provided. The fourth nozzles 543 can be arranged along a first direction D1. Among the fourth deposition sources 54, a first distance DS1 (i.e., the separation distance in the first direction D1 between two fourth deposition sources 54 adjacent to the edge of the fourth baffle plate 5451) can be different from a second distance DS2 (i.e., the separation distance in the first direction D1 between two fourth deposition sources 54 at the center of the fourth baffle plate 5451). The first distance DS1 can be the distance in the first direction D1 between two adjacent fourth nozzles 543 at the edge of the fourth baffle plate 5451. The second distance DS2 can be the distance in the first direction D1 between two adjacent fourth nozzles 543 at the center of the fourth baffle plate 5451. The second distance DS2 can be greater than the first distance DS1. For example, the first distance DS1 may be smaller than the second distance DS2, and therefore, the fourth deposition source 54 may be arranged more densely at the edge of the fourth barrier plate 5451 than at the center of the fourth barrier plate 5451. However, for ease of illustration, an embodiment in which the fourth deposition source 54 has a single form will be described below.

[0055] Figure 7 A flowchart illustrating steps of a substrate deposition method according to an embodiment of the disclosure is described.

[0056] Reference is made to Figure 7 A substrate deposition method S according to an embodiment can be provided. According to the substrate deposition method S, a deposition layer can be formed on a substrate by using a substrate deposition apparatus SA (see, for example, Figures 1 to 6 described below. The substrate deposition method S can include placing a substrate in a substrate deposition apparatus (S1) and performing a deposition process on the substrate (S2). Figure 1 Performing a deposition process on the substrate (S2) can include heating a deposition source module (S21) and moving the deposition source module (S22).

[0057] Hereinafter, the substrate deposition apparatus SA described below will be described in more detail.

[0058] Figures 8 to 11 The substrate deposition method S described below will be described in more detail. Figure 7

[0059] A diagram illustrating steps of a substrate deposition method according to a flowchart in Figures 8 to 11 Figure 7 A substrate W can be disposed on a stage 3 by placing a substrate in a substrate deposition apparatus (S1) with reference to

[0060] Figure 7 , Figure 8 and Figure 9 Heating a deposition source module (S21) can include heating a deposition source module by using a first heater 517 (see, for example, Figure 8

[0061] Heating a deposition source module (S21) can include heating a deposition source module by using a second heater 527 (see, for example, Figure 8 Figure 10 Figure 11 Heating a deposition source module (S21) can include heating a deposition source module by using a third heater 537 (see, for example, Figure 3 Figure 3 Figure 3 Heating a deposition source module (S21) can include heating a deposition source module by using a fourth heater 547 (see, for example, Figure 3 ​​​​​​​​) to increase the temperature of the first deposition material 519, the second deposition material 529, the third deposition material 539, and / or the fourth deposition material 549. The first deposition source 51 and the second deposition source 52 can be heated at different temperatures from each other. In one embodiment, the first deposition source 51 can be heated at a first temperature, and the second deposition source 52 can be heated at a second temperature. The first temperature can be different from the second temperature. As an example, the first temperature can be in a range from about 200°C to about 400°C; however, the present disclosure should not be limited thereto or thereby. In the above description, an embodiment in which the temperature of the first deposition material 519, the second deposition material 529, the third deposition material 539, and / or the fourth deposition material 549 is increased differently is described, but the present disclosure should not be limited thereto or thereby.

[0062] During the heating of the deposition source module (S21), the first deposition material 519 stored in the first deposition source 51 can be evaporated and can be discharged to the outside through the first nozzle 513. The first deposition material 51a discharged through the first nozzle 513 can reach the lower surface Wb of the substrate W after passing through the first blocking plate 5151. That is, the evaporated first deposition material 51a can be deposited on the substrate W.

[0063] During the heating of the deposition source module (S21), the second deposition material 529 stored in the second deposition source 52 can be evaporated and can be discharged to the outside through the second nozzle 523. The second deposition material 52a discharged through the second nozzle 523 can reach the lower surface Wb of the substrate W after passing through the second blocking plate 5251. That is, the evaporated second deposition material 52a can be deposited on the substrate W.

[0064] During the heating of the deposition source module (S21), the third deposition material 539 stored in the third deposition source 53 can be evaporated and can be discharged to the outside through the third nozzle 533. The third deposition material 53a discharged through the third nozzle 533 can reach the lower surface Wb of the substrate W after passing through the third blocking plate 5351. That is, the evaporated third deposition material 53a can be deposited on the substrate W.

[0065] During the heating of the deposition source module (S21), the fourth deposition material 549 stored in the fourth deposition source 54 can be evaporated and can be discharged to the outside through the fourth nozzle 543. The fourth deposition material 54a discharged through the fourth nozzle 543 can reach the lower surface Wb of the substrate W after passing through the fourth blocking plate 5451. That is, the evaporated fourth deposition material 54a can be deposited on the substrate W.

[0066] The second deposited material 52a evaporated from the substrate W can reach a first area where the substrate W is located, and the fourth deposited material 54a evaporated from the substrate W can reach a second area where the substrate W is located. The first area can have the same size as the second area; however, the present disclosure should not be limited thereto or thereby. According to an embodiment, the first area can partially overlap the second area. According to an embodiment, the first area can completely overlap the second area, and the first area can be identical to the second area. The third deposited material 51a evaporated from the substrate W can reach a third area where the substrate W is located, and the third area can be narrower than the first area.

[0067] By moving the deposition source module (S22), the heated deposition source module 5 can be moved in a direction parallel to the second direction D2. Accordingly, the deposition layer can be completely formed on the lower surface Wb of the substrate W.

[0068] According to the substrate deposition apparatus and the substrate deposition method using the same, four deposition sources can be used for deposition on the substrate W, and thus various deposition structures can be implemented. In such an embodiment, when the second deposited material is identical to the fourth deposited material, the durability of the deposition layer can be improved, and the lifespan of a manufactured product can be extended.

[0069] According to the substrate deposition apparatus and the substrate deposition method using the same, a plurality of deposition sources including the same deposited material can be provided. For example, a linear deposition method can be implemented. Accordingly, the deposition layer can be deposited on the entire substrate at once, and thus the process can be quickly performed.

[0070] According to the substrate deposition apparatus and the substrate deposition method using the same, the deposition sources can be more densely arranged at the edges (or ends) than at the center. Accordingly, a phenomenon in which the thickness of the deposition layer is reduced at the edges of the substrate can be prevented, and thus the deposition layer can be more uniformly formed.

[0071] Figure 12 A cross-sectional view of a deposition source module 5' according to an embodiment of the present disclosure.

[0072] In Figure 12 , identical reference numerals indicate identical elements in Figures 1 to 11 , and thus detailed descriptions of the same elements will be omitted or simply repeated.

[0073] Referring to Figure 12 , a deposition source module 5' can be provided. The deposition source module 5' can include a first deposition source 51', a second deposition source 52', a third deposition source 53', and a fourth deposition source 54'.

[0074] The first deposition source 51' can comprise a first blocking plate 5151'. A width of the first blocking hole (e.g., first blocking opening) 5151h' in the first blocking plate 5151' can be referred to as a first width w1'.

[0075] The second deposition source 52' can comprise a second blocking plate 5251'. A width of the second blocking hole (e.g., second blocking opening) 5251h' in the second blocking plate 5251' can be referred to as a second width w2'. Unlike the description with reference to Figure 3 , the second width w2' can be substantially the same or similar to the first width w1'.

[0076] The third deposition source 53' can comprise a third blocking plate 5351'. A width of the third blocking hole (e.g., third blocking opening) 5351h' in the third blocking plate 5351' can be referred to as a third width w3'. The third width w3' can be different from the first width w1'. As an example, the third width w3' can be greater than the first width w1'.

[0077] The fourth deposition source 54' can comprise a fourth blocking plate 5451'. A width of the fourth blocking hole (e.g., fourth blocking opening) 5451h' in the fourth blocking plate 5451' can be referred to as a fourth width w4'. Unlike the description with reference to Figure 3 , the fourth width w4' can be substantially the same or similar to the third width w3'.

[0078] Figure 13 A cross-sectional view of a deposition source module 5" according to an embodiment of the present disclosure.

[0079] In Figure 13 , the same reference numerals are used to represent the same elements in Figures 1 to 12 , and thus, detailed descriptions on the same elements will be omitted or only briefly repeated.

[0080] With reference to Figure 13 , a deposition source module 5" can be provided. The deposition source module 5" can comprise a first deposition source 51", a second deposition source 52", a third deposition source 53", and a fourth deposition source 54". A shutter 8 can be further disposed above the deposition source module 5". The shutter 8 can be disposed above at least one of the first deposition source 51", the second deposition source 52", the third deposition source 53", and the fourth deposition source 54". According to an embodiment, the shutter 8 can be movable in a direction parallel to the second direction D2 to selectively cover at least one of the first deposition source 51", the second deposition source 52", the third deposition source 53", and the fourth deposition source 54".

[0081] According to the substrate deposition apparatus and the substrate deposition method using the same, a shutter can be used to cover a deposition source not in use. Accordingly, various deposition layers can be implemented with a single deposition source module.

[0082] Figure 14 FIG. 6 is a cross-sectional view of a deposition source module according to an embodiment of the present disclosure.

[0083] In Figure 14 , identical reference numerals are used to designate the same elements as those in Figures 1 to 13 , and thus, detailed descriptions of the same elements will be omitted or simply repeated.

[0084] Referring to Figure 14 , a deposition source module 5”’ can be provided. The deposition source module 5”’ can include a first deposition source 51”’, a second deposition source 52”’, a third deposition source 53”’, and a fourth deposition source 54”’.

[0085] The first deposition source 51”’ can include a first nozzle 513”’. The second deposition source 52”’ can include a second nozzle 523”’. The third deposition source 53”’ can include a third nozzle 533”’. The fourth deposition source 54”’ can include a fourth nozzle 543”’. At least one of the first nozzle 513”’, the second nozzle 523”’, the third nozzle 533”’, and the fourth nozzle 543”’ can form an acute angle with respect to the third direction D3. That is, unlike the description with reference to Figure 3 , the nozzles can not be oriented in a vertical direction.

[0086] According to the substrate deposition apparatus and the substrate deposition method using the same, the width of the deposition area can be adjusted by controlling the direction of the nozzles. Accordingly, various deposition layers can be implemented.

[0087] Although embodiments of the present disclosure have been described herein, it should be understood that the present disclosure should not be limited to these embodiments, but various changes and modifications can be made by those ordinary skilled in the art within the spirit and scope of the present disclosure claimed herein. Accordingly, the disclosed subject matter should not be limited to any single embodiment described herein, but rather the scope of the inventive concept should be according to the appended claims and their equivalents.

Claims

1. A substrate deposition method, comprising: placing a substrate in a substrate deposition apparatus; and performing a deposition process on the substrate in the substrate deposition apparatus, the substrate deposition apparatus comprising: a process chamber having a process space; a stage in the process chamber and configured to support the substrate; and a deposition source module, the deposition source module comprising: a plurality of first deposition sources arranged along a first direction that is a horizontal direction; a plurality of second deposition sources arranged along the first direction; a plurality of third deposition sources arranged along the first direction; and a plurality of fourth deposition sources arranged along the first direction, wherein the performing the deposition process on the substrate comprises: heating the deposition source module; and moving the deposition source module in a direction parallel to a second direction, the second direction being a horizontal direction that intersects the first direction.

2. The substrate deposition method of claim 1, wherein the second deposition sources are spaced apart from the first deposition sources in the direction parallel to the second direction.

3. The substrate deposition method of claim 1, wherein each of the plurality of first deposition sources comprises a first deposition material, each of the plurality of second deposition sources comprises a second deposition material, each of the plurality of third deposition sources comprises a third deposition material, and each of the plurality of fourth deposition sources comprises a fourth deposition material, and wherein the heating the deposition source module comprises: evaporating the first deposition material in the first deposition sources to deposit on the substrate; evaporating the second deposition material in the second deposition sources to deposit on the substrate; evaporating the third deposition material in the third deposition sources to deposit on the substrate; and evaporating the fourth deposition material in the fourth deposition sources to deposit on the substrate.

4. The substrate deposition method of claim 3, wherein the second deposition material is the same as the fourth deposition material.

5. The substrate deposition method of claim 3, wherein an area on the substrate on which the second deposition material is deposited in the evaporating of the second deposition material is the same as an area on the substrate on which the fourth deposition material is deposited in the evaporating of the fourth deposition material.

6. The substrate deposition method of claim 3, wherein a first area on the substrate on which the second deposition material is deposited in the evaporating of the second deposition material does not overlap with a second area on the substrate on which the fourth deposition material is deposited in the evaporating of the fourth deposition material, and wherein the first area has a same size as a size of the second area.

7. The substrate deposition method of claim 1, wherein in the heating the deposition source module, a temperature of the deposition source module is in a range of 200 °C to 400 °C.

8. The substrate deposition method of claim 3, wherein an area on the substrate on which the first deposition material is deposited in the evaporating of the first deposition material is narrower than an area on the substrate on which the second deposition material is deposited in the evaporating of the second deposition material.

9. A substrate deposition method, comprising: ​ ​ placing a substrate in a substrate deposition apparatus; and performing a deposition process on the substrate using the substrate deposition apparatus, the substrate deposition apparatus comprising: a process chamber having a process space; a stage in the process chamber and configured to support the substrate; and a deposition source module, the deposition source module comprising a first deposition source, a second deposition source, a third deposition source, and a fourth deposition source arranged in a horizontal direction in that order, wherein the performing the deposition process on the substrate comprises: heating the deposition source module; and moving the deposition source module in the horizontal direction, and wherein the first deposition source comprises a first deposition material, the second deposition source comprises a second deposition material different from the first deposition material, the third deposition source comprises a third deposition material different from the second deposition material, and the fourth deposition source comprises a fourth deposition material same as the second deposition material.

10. The substrate deposition method according to claim 9, wherein the first deposition source, the second deposition source, the third deposition source, and the fourth deposition source are respectively provided as a plurality of first deposition sources, a plurality of second deposition sources, a plurality of third deposition sources, and a plurality of fourth deposition sources.

11. The substrate deposition method according to claim 10, wherein the plurality of first deposition sources are arranged in a first direction, the plurality of second deposition sources are arranged in the first direction, and the second deposition source is spaced apart from the first deposition source in a direction parallel to a second direction intersecting the first direction.

12. The substrate deposition method according to claim 11, wherein a separation distance in the first direction between two first deposition sources adjacent to each other at an edge among the plurality of first deposition sources is smaller than a separation distance in the first direction between two first deposition sources adjacent to each other at a center among the plurality of first deposition sources.

13. The substrate deposition method according to claim 9, wherein in the heating the deposition source module, the first deposition source is heated at a first temperature, and the second deposition source is heated at a second temperature different from the first temperature.

14. The substrate deposition method according to claim 9, wherein the first deposition material comprises Alq3 (Al(C9H6NO)3).

15. The substrate deposition method according to any one of claims 9 to 14, wherein the performing the deposition process on the substrate further comprises arranging a shutter above at least one of the first deposition source, the second deposition source, the third deposition source, and the fourth deposition source.

16. A substrate deposition apparatus comprising: a process chamber having a process space; a stage in the process chamber and configured to support a substrate; and a deposition source module, the deposition source module comprising: a plurality of first deposition sources arranged in a first direction which is a horizontal direction; a plurality of second deposition sources arranged in the first direction; a plurality of third deposition sources arranged in the first direction; and a plurality of fourth deposition sources arranged in the first direction, ​ wherein the second deposition source is spaced apart from the first deposition source in a direction parallel to a second direction that intersects the first direction.

17. The substrate deposition apparatus of claim 16, wherein each of the plurality of first deposition sources comprises: a first deposition housing; and a first nozzle on the first deposition housing.

18. The substrate deposition apparatus of claim 17, wherein each of the plurality of first deposition sources further comprises a first blocker plate above the first nozzle and having a first blocker aperture.

19. The substrate deposition apparatus of claim 18, wherein each of the plurality of second deposition sources comprises: a second deposition housing; a second nozzle on the second deposition housing; and a second blocker plate above the second nozzle and having a second blocker aperture, wherein each of the plurality of third deposition sources comprises: a third deposition housing; a third nozzle on the third deposition housing; and a third blocker plate above the third nozzle and having a third blocker aperture, wherein each of the plurality of fourth deposition sources comprises: a fourth deposition housing; a fourth nozzle on the fourth deposition housing; and a fourth blocker plate above the fourth nozzle and having a fourth blocker aperture, and wherein the first blocker aperture has a width that is different from a width of the second blocker aperture, and the fourth blocker aperture has the same width as the width of the second blocker aperture.

20. The substrate deposition apparatus of any of claims 16 to 19, wherein a separation distance in the first direction between two of the first deposition sources that are adjacent to each other at an edge among the plurality of first deposition sources is less than a separation distance in the first direction between two of the first deposition sources that are adjacent to each other at a center among the plurality of first deposition sources.

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