Magnetic control device and semiconductor process equipment

Abstract

The invention discloses a magnetic control device and semiconductor process equipment, and belongs to the technical field of semiconductors. The magnetic control device comprises a back plate and a plurality of magnetic groups, the plurality of magnetic groups are matched to form a horizontal magnetic field for restraining the movement direction of plasma, each magnetic group comprises an electromagnetic module and a permanent magnet, the electromagnetic module and the permanent magnet are arranged on the back plate, the electromagnetic module comprises an electromagnetic coil, and the electromagnetic coil is arranged around the permanent magnet; the magnetic field intensity generated by the magnetic control device is adjusted by adjusting the power-on current of the electromagnetic coil. The semiconductor process equipment comprises the magnetic control device. Thus, the electromagnetic module is combined with the permanent magnet, a large and constant magnetic field can be provided, the movement direction of plasma in the cavity body can be restrained, the distribution condition of the magnetic field cannot be changed, the magnetic field intensity of the surface of the target material can be effectively adjusted, and the magnetic field intensity of the surface of the target material is made to be constant.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor, and particularly relates to a magnetic control device and a semiconductor process equipment. BACKGROUND

[0002] Magnetron sputtering is a way of physical vapor deposition, which can be used to prepare various thin film materials such as metal, semiconductor and insulator, and is widely used in integrated circuits, displays, photovoltaics and other fields.

[0003] Magnetron sputtering technology is to make charged particles bombard target material under the joint action of electric field and magnetic field, and the atoms sputtered from the target material are deposited on the surface of the wafer to form a thin film. With the consumption of the target material, the thickness of the target material gradually decreases, while the installation position of the magnetic control device is constant, so that the distance between the surface of the target material and the magnetic control device changes, the magnetic field strength of the target material surface increases, and the change of the magnetic induction intensity of the target material surface will affect the bombardment position and rate of charged particles on the target material, and then affect the uniformity of thin film deposition.

[0004] To solve the above problems, in the related art, the magnetic control device and the target material are both arranged in the chamber body, and the magnetic control device is additionally provided with an electromagnetic module, which adjusts the magnetic field generated by the magnetic control device on the surface of the target material by controlling the current change of the electromagnetic module, so that the magnetic field on the surface of the target material is not affected by the consumption amount of the target material, but the magnetic field strength provided by the electromagnetic module is small, which is not enough to constrain the movement of charged particles, so the existing magnetic control device cannot effectively adjust the magnetic field strength on the surface of the target material. SUMMARY

[0005] The purpose of the embodiments of the present application is to provide a magnetic control device and a semiconductor process equipment, which can solve the problem that the magnetic control device in the related art cannot effectively adjust the magnetic field strength on the surface of the target material.

[0006] In a first aspect, the embodiments of the present application provide a magnetic control device, which comprises a back plate and a plurality of magnetic groups, the plurality of magnetic groups cooperate to form a horizontal magnetic field for constraining the movement direction of plasma, each of the magnetic groups comprises an electromagnetic module and a permanent magnet, the electromagnetic module and the permanent magnet are arranged on the back plate, and the electromagnetic module is located at the magnetic pole of the permanent magnet, and the magnetic field strength generated by the magnetic control device is adjusted by adjusting the current of the electromagnetic module.

[0007] In a second aspect, the embodiments of the present application further provide a semiconductor process equipment comprising the above magnetic control device.

[0008] In the embodiment of the present application, the magnetic group of the magnetic control device is additionally provided with a permanent magnet, which can provide a larger and constant magnetic field, sufficient to constrain the movement direction of the plasma in the chamber body. On the basis of the magnetic field provided by the permanent magnet, the current of the electromagnetic module is adjusted to adjust the size of the magnetic field strength generated by the magnetic control device. Specifically, with the consumption of the target material, the current of the electromagnetic module is adjusted to reduce the magnetic field strength of the magnetic control device, so as to keep the magnetic field strength on the surface of the target material constant, avoid affecting the bombardment position and rate of the plasma, and ensure the uniformity of film deposition. Moreover, the electromagnetic module is combined with the permanent magnet, which does not change the magnetic field distribution of the magnetic control device. Therefore, the magnetic control device in the embodiment of the present application can effectively adjust the magnetic field strength on the surface of the target material.

[0009] In addition, the electromagnetic coil is arranged around the permanent magnet, that is, the permanent magnet penetrates the electromagnetic coil, and the permanent magnet serves as the core of the electromagnetic coil, which is conducive to further increasing the magnetic field of the electromagnetic module. Therefore, in the process of changing the current of the electromagnetic coil, the change range of the magnetic field strength is appropriately increased, which is more conducive to adjusting the magnetic field strength. Moreover, the permanent magnet does not need to occupy additional space, and the total space occupied by the electromagnetic coil and the permanent magnet is reduced, that is, the occupied space of each magnetic group is smaller, so that the number of magnetic groups that can be arranged on the back plate is larger, which is more conducive to adjusting the magnetic field strength on the surface of the target material. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a sectional view of the magnetic control device disclosed in the embodiment of the present application;

[0011] Figure 2 is a partial sectional view of the back plate disclosed in the embodiment of the present application;

[0012] Figure 3 is a sectional view of the electromagnetic coil disclosed in the embodiment of the present application;

[0013] Figure 4 is a simulation schematic diagram of the magnetic group in the process of adjusting the current of the electromagnetic module disclosed in the embodiment of the present application;

[0014] Figure 5 is a sectional view of the semiconductor process equipment disclosed in the embodiment of the present application.

[0015] BRIEF DESCRIPTION OF DRAWINGS

[0016] 100-back plate, 110-slot, 111-first slot, 112-second slot, 120-electric connection hole,

[0017] a-magnetic group,

[0018] 200-electromagnetic module, 210-electromagnetic coil,

[0019] 300-permanent magnet, 310-first magnetic column, 320-second magnetic column,

[0020] 301 - first permanent magnet, 302 - second permanent magnet,

[0021] 410 - first magnetic conducting plate, 420 - second magnetic conducting plate, 400a - third slot,

[0022] 500 - rotating mechanism, 510 - rotating brush, 511 - wire hole,

[0023] 610 - first power supply, 611 - electric connection line, 620 - second power supply,

[0024] 710 - chamber body, 720 - susceptor, 730 - upper electrode device,

[0025] 800 - target material. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be described clearly below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art belong to the scope of protection of the present application.

[0027] The terms "first", "second", and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are usually a category, and are not limited to the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / ", generally represents a "or" relationship between the front and rear associated objects.

[0028] The magnetic control device and semiconductor process equipment provided by the embodiments of the present application will be described in detail below in conjunction with the drawings and specific embodiments and application scenarios.

[0029] Please refer to Figures 1-5 The magnetic control device disclosed in the embodiments of the present application includes a back plate 100 and a plurality of magnetic groups a, the back plate 100 provides a mounting base for each magnetic group a, each magnetic group a can generate a magnetic field, and the plurality of magnetic groups a cooperate to form a horizontal magnetic field for restraining the movement direction of the plasma, so that when the magnetic control device is placed in the chamber body 710, the magnetic control device can restrain the movement direction of the plasma in the chamber body 710, so that the plasma sputters the wafer carried by the susceptor 720.

[0030] Optionally, the back plate 100 can be a circular structure, and the plurality of magnetic groups a are distributed on the back plate 100.

[0031] Each magnetic group a includes an electromagnetic module 200 and a permanent magnet 300, and the magnetic field of the magnetic group a is the sum of the magnetic field of the electromagnetic module 200 and the magnetic field of the permanent magnet 300, wherein the permanent magnet 300 is used to provide a larger magnetic field which is sufficient to constrain the movement direction of the plasma, and the electromagnetic module 200 is used to affect the magnetic field of the magnetic group a in a smaller range.

[0032] Specifically, the electromagnetic module 200 includes an electromagnetic coil 210, and the electromagnetic coil 210 is arranged around the permanent magnet 300, that is, the permanent magnet 300 penetrates the electromagnetic coil 210, and the permanent magnet 300 acts as the core of the electromagnetic coil 210, which is conducive to further increasing the magnetic field of the electromagnetic module 200, so that the range of the change of the magnetic field strength is appropriately increased in the process of the change of the current of the electromagnetic coil 210, which is more conducive to adjusting the magnetic field strength; moreover, the permanent magnet 300 does not need to occupy additional space, and the total space occupied by the electromagnetic coil 210 and the permanent magnet 300 is reduced, that is, the occupied space of each magnetic group a is smaller, so that the number of the magnetic groups a that can be arranged on the back plate 100 is larger, which is more conducive to adjusting the magnetic field strength on the surface of the target material 800; the permanent magnet 300 can be made of a strong magnetic material, such as a ferrite boron magnet. The magnetic field of the permanent magnet 300 is constant, and the generated magnetic field can be changed by changing the current of the electromagnetic coil 210, so that the permanent magnet 300 and the electromagnetic module 200 are superposed, and the generated magnetic field of the magnetic group a can be adjusted. The electromagnetic module 200 and the permanent magnet 300 are arranged on the back plate 100, and optionally, the electromagnetic module 200 and the permanent magnet 300 can be arranged inside the back plate 100 or outside the back plate 100, and the application does not limit the arrangement position of the electromagnetic module 200 and the permanent magnet 300.

[0033] Since the positions of the electromagnetic coil 210 and the permanent magnet 300 are basically consistent, the magnetic field distributions of the two are also consistent, so in the process of adjusting the current of the electromagnetic coil 210, only the size of the magnetic field generated by the magnetic group a is changed, and the magnetic field distribution of the magnetic group a is not affected, so the magnetic field strength generated by the magnetron device can be adjusted by adjusting the current of the electromagnetic coil 210.

[0034] In the embodiment of the present application, the magnetic group a of the magnetron device is additionally provided with a permanent magnet 300, which can provide a larger and constant magnetic field, sufficient to constrain the movement direction of the plasma in the chamber body 710. On the basis of the magnetic field provided by the permanent magnet 300, the current of the electromagnetic module 200 is adjusted to adjust the strength of the magnetic field generated by the magnetron device. Specifically, with the consumption of the target material 800, the current of the electromagnetic module 200 is adjusted to reduce the strength of the magnetic field of the magnetron device, so that the strength of the magnetic field on the surface of the target material 800 remains constant, avoiding affecting the bombardment position and rate of the plasma, and ensuring the uniformity of film deposition. Moreover, the electromagnetic module 200 is combined with the permanent magnet 300, which does not change the magnetic field distribution of the magnetron device.

[0035] Therefore, the magnetron device in the embodiment of the present application can effectively adjust the strength of the magnetic field on the surface of the target material 800. In addition, under the condition that the volume of the electromagnetic module 200 and the permanent magnet 300 is the same, the magnetic field provided by the permanent magnet 300 is larger, so that the participation of the permanent magnet 300 enables the magnetic group a to generate a larger magnetic field in a limited space to constrain the movement direction of the plasma in the chamber body 710.

[0036] In an optional embodiment, as shown in Figures 1-3 The magnetic group a is arranged inside the back plate 100, the back plate 100 is provided with a slot 110 along the thickness direction of the back plate 100, and the electromagnetic coil 210 and the permanent magnet 300 are located in the slot 110. Alternatively, the depth of the slot 110 can be consistent with the thickness of the back plate 100, that is, the slot 110 penetrates through the back plate 100, or the depth of the slot 110 can be smaller than the thickness of the back plate 100. In any case, the electromagnetic coil 210 and the permanent magnet 300 (i.e. the magnetic group a) can be installed inside the back plate 100. Specifically, when the magnetron device is placed in the chamber body 710, the back plate 100 is arranged horizontally, and the electromagnetic coil 210 and the permanent magnet 300 are arranged vertically.

[0037] By using the embodiment, the magnetic group a is embedded in the back plate 100, avoiding occupying other space outside the back plate 100, which is beneficial to reduce the occupied space of the magnetron device.

[0038] In an optional embodiment, the permanent magnet 300 is provided with a first magnetic column 310, the electromagnetic coil 210 and the permanent magnet 300 are located in the slot 110, and the first magnetic column 310 is located outside the slot 110.

[0039] In another embodiment, as shown in Figure 1 and Figure 2As shown, the slot 110 includes a first slot 111 and a second slot 112 connected in sequence, the first slot 111 and the second slot 112 are sequentially arranged along the thickness direction of the back plate 100, the electromagnetic coil 210 and the permanent magnet 300 are located in the first slot 111, and the first magnetic column 310 is located in the second slot 112. Optionally, the slot wall surface of the first slot 111 is in contact with the electromagnetic coil 210, and the slot wall surface of the second slot 112 cooperates with the surface of the first magnetic column 310, that is, the shape and structure of the second slot 112 are the same as those of the first magnetic column 310.

[0040] By adopting the embodiment, the overall structure of the permanent magnet 300, the first magnetic column 310 and the electromagnetic coil 210 is located in the back plate 100, avoiding the first magnetic column 310 occupying other space outside the back plate 100, which is conducive to further reducing the occupied space of the magnetic control device.

[0041] In an optional embodiment, the permanent magnet 300 further comprises a second magnetic column 320, the second magnetic column 320 is opposite to the first magnetic column 310, the magnetic poles of the first magnetic column 310 and the second magnetic column 320 are opposite, and the second magnetic column 320 is located outside the slot 110. Each of the permanent magnets 300 includes a first permanent magnet 301 and a second permanent magnet 302, the first permanent magnet 301 and the second permanent magnet 302 are multiple, the first magnetic column 310 of the first permanent magnet 301 and the first magnetic column 310 of the second permanent magnet 302 are opposite in magnetism, the second magnetic column 320 of the first permanent magnet 301 and the second magnetic column 320 of the second permanent magnet 302 are opposite in magnetism, and each first permanent magnet 301 and each second permanent magnet 302 are independently arranged without magnetic connection structure.

[0042] Specifically, two magnetic poles of the first permanent magnet 301 are arranged along a first direction, two magnetic poles of the second permanent magnet 302 are arranged along a second direction, the first direction and the second direction are opposite, and optionally, the first direction and the second direction are both vertical directions, the two magnetic poles of the permanent magnet 300 are N pole and S pole, the N pole of the first permanent magnet 301 and the S pole of the second permanent magnet 302 are in the same direction, and the S pole of the first permanent magnet 301 and the N pole of the second permanent magnet 302 are in the same direction, so that the first permanent magnet 301 and the second permanent magnet 302 cooperate to form a horizontal magnetic field.

[0043] In another embodiment, the magnetic control device further comprises a first magnetic guide and a second magnetic guide, the first magnetic guide and the second magnetic guide are both magnetic guide structures, the second magnetic column 320 of each first permanent magnet 301 is magnetically connected through the first magnetic guide, and the second magnetic column 320 of each second permanent magnet 302 is magnetically connected through the second magnetic guide. The first magnetic guide and the second magnetic guide can be made of stainless steel material, or other materials with magnetic guide effect.

[0044] Optionally, the first magnetic conductive member can be connected with the back plate 100, so that the first magnetic conductive member is in contact with the second magnetic poles 320 of the first permanent magnets 301 to realize magnetic connection, or the first magnetic conductive member is not in contact with the back plate 100, and the first magnetic conductive member is directly connected with the second magnetic poles 320 of the first permanent magnets 301. The second magnetic conductive member can be connected with the back plate 100, so that the second magnetic conductive member is in contact with the second magnetic poles 320 of the second permanent magnets 302 to realize magnetic connection, or the second magnetic conductive member is not in contact with the back plate 100, and the second magnetic conductive member is directly connected with the second magnetic poles 320 of the second permanent magnets 302.

[0045] By adopting the embodiment, the same magnetic poles of the first permanent magnets 301 are connected by the first magnetic conductive member, and the first permanent magnets 301 are magnetically conductive, which is beneficial to the magnetic field generated by the first permanent magnets 301 being more uniform. Similarly, the same magnetic poles of the second permanent magnets 302 are connected by the second magnetic conductive member, and the second permanent magnets 302 are magnetically conductive, which is beneficial to the magnetic field generated by the second permanent magnets 302 being more uniform, so that the magnetic field generated by the magnetic control device is more uniform.

[0046] In further embodiments, the first magnetic conductive member is a first magnetic conductive plate 410, and the first magnetic conductive plate 410 is magnetically attracted and matched with the first permanent magnets 301. Optionally, the first magnetic conductive plate 410 is directly connected with the surface of the back plate 100 to realize magnetic connection between the first magnetic conductive plate 410 and the second magnetic poles 320 of the first permanent magnets 301. By adopting the embodiment, the first magnetic conductive member is arranged in a plate structure, the laying area of the plate structure is large, and the first magnetic conductive plate 410 is more easily magnetically attracted and matched with the first permanent magnets 301, so that the first magnetic conductive plate 410 and the first permanent magnets 301 do not need to be separately magnetically connected.

[0047] Of course, in other embodiments, the first magnetic conductive member can be other structures than the magnetic conductive plate, and the first magnetic conductive member can be magnetically connected with the first permanent magnets 301 by other ways than magnetic attraction and matching such as welding.

[0048] In further embodiments, the second magnetic conductive member is a second magnetic conductive plate 420, and the second magnetic conductive plate 420 is magnetically attracted and matched with the second permanent magnets 302. Optionally, the second magnetic conductive plate 420 is directly connected with the surface of the back plate 100 to realize magnetic connection between the second magnetic conductive plate 420 and the second magnetic poles 320 of the second permanent magnets 302. By adopting the embodiment, the second magnetic conductive member is arranged in a plate structure, the laying area of the plate structure is large, and the second magnetic conductive plate 420 is more easily magnetically attracted and matched with the second permanent magnets 302, so that the second magnetic conductive plate 420 and the second permanent magnets 302 do not need to be separately magnetically connected.

[0049] Of course, in other embodiments, the second magnetic conductor can be a structure other than a magnetic plate, and the second magnetic conductor can be magnetically connected to the second permanent magnet 302 by means other than magnetic attraction such as welding.

[0050] Optionally, both the first magnetic plate 410 and the second magnetic plate 420 can be made of stainless steel, or other plate-like structures with magnetic conductivity. The embodiments of this application do not limit the shape of the first magnetic plate 410 and the second magnetic plate 420.

[0051] In an optional embodiment, refer to Figure 3 As shown, both the first magnetic plate 410 and the second magnetic plate 420 are provided with multiple third slots 400a, each corresponding to a second magnetic post 320, with each second magnetic post 320 extending into its corresponding third slot 400a. Specifically, the second magnetic posts 320 of each first permanent magnet 301 extend into each third slot 400a of the first magnetic plate 410, and the second magnetic posts 320 of each second permanent magnet 302 extend into each third slot 400a of the second magnetic plate 420. Optionally, the shape and structure of the third slots 400a are the same as those of the second magnetic posts 320.

[0052] In this embodiment, the first magnetic plate 410 is provided with a third slot 400a to cooperate with the second magnetic post 320, which helps to increase the contact area between the first magnetic plate 410 and the second magnetic post 320, and facilitates a more stable magnetic attraction between the first magnetic plate 410 and the first permanent magnet 301. Similarly, the second magnetic plate 420 is provided with a third slot 400a to cooperate with the second magnetic post 320, which helps to increase the contact area between the second magnetic plate 420 and the second magnetic post 320, and facilitates a more stable magnetic attraction between the second magnetic plate 420 and the second permanent magnet 302.

[0053] Of course, in other embodiments, the first magnetic plate 410 and the second magnetic plate 420 may not have the third slot 400a provided, and the surfaces of the first magnetic plate 410 and the second magnetic plate 420 may directly contact the second magnetic post 320.

[0054] In optional embodiments, such as Figure 2 As shown, the back plate 100 is provided with an electrical connection hole 120 for the power supply connection cable 611 to pass through. The electrical connection hole 120 communicates with the slot 110 so that the first power supply 610 is electrically connected to the electromagnetic coil 210 through the electrical connection cable 611. Optionally, the first power supply 610 can be a battery module built into the magnetic control device itself, or it can be an external power supply other than the magnetic control device. With this configuration, the back plate 100 reserves the electrical connection hole 120 for the electrical connection cable 611, avoiding the electrical connection cable 611 from directly passing through the slot of the slot 110 and affecting the installation of the magnetic assembly a.

[0055] Optionally, the electrical connection hole 120 communicates with the first slot 111 and is located on the bottom wall of the first slot 111. The electrical connection hole 120 is arranged side by side with the second slot 112. In this way, the electrical connection hole 120 is directly opened along the thickness direction of the back plate 100, which helps to shorten the opening length of the electrical connection hole 120 and facilitates the electrical connection between the first power supply 610 and the electromagnetic coil 210. Of course, the electrical connection hole 120 can also be opened on the side wall of the first slot 111, allowing the electrical connection wire 611 to pass through and realize the electrical connection between the first power supply 610 and the electromagnetic coil 210 outside the back plate 100.

[0056] Of course, in other embodiments, the back plate 100 may not be provided with electrical connection holes 120, and the electromagnetic coil 210 in the slot 110 may be directly connected to the first power supply 610 through the electrical connection line 611, which extends to the outside of the back plate 100 through the slot of the slot 110.

[0057] In an optional embodiment, refer to Figure 1 and Figure 5 As shown, the magnetron sputtering device also includes a rotating mechanism 500, which is connected to the back plate 100 and can drive the back plate 100 to rotate. Optionally, the rotating mechanism 500 can be a component such as a motor that can provide a rotational power source. In this way, by driving the back plate 100 to rotate through the rotating mechanism 500, the magnetic field generated by the magnetron sputtering device within the chamber body 710 can be made more uniform, which is more conducive to improving the process effect.

[0058] In this embodiment, the rotating mechanism 500 includes a rotating brush 510, which is located at the center of the back plate 100. The rotating brush 510 is provided with a wire hole 511 for the power supply connection wire 611 to pass through, so that the rotating brush 510 is energized and the rotating mechanism 500 can smoothly drive the back plate 100 to rotate. Moreover, the electrical connection hole 120 is connected to the wire hole 511, so the electrical connection wire 611 that is electrically connected to the electromagnetic coil 210 also passes through the wire hole 511. Therefore, the electrical connection wire 611 that is electrically connected to the electromagnetic coil 210 directly passes through the wire hole 511 provided by the rotating brush 510 itself. Since the wire hole 511 is located at the center of the back plate 100, the electrical connection wire 611 that is electrically connected to the electromagnetic coil 210 will not be affected during the rotation of the back plate 100, avoiding the situation of the electrical connection wire 611 being tangled and ensuring that the electromagnetic coil 210 is stably energized.

[0059] Of course, in other embodiments, the wire hole 511 may not be connected to the electrical connection hole 120, that is, the electrical connection wire 611, which is electrically connected to the electromagnetic coil 210, passes through the electrical connection hole 120 and is directly connected to the first power supply 610.

[0060] In an optional embodiment, the permanent magnet 300 is a columnar structure, and the electromagnetic coil 210 is in contact with the peripheral surface of the columnar structure. Alternatively, the permanent magnet is a prismatic structure, and the electromagnetic coil 210 is wrapped around the peripheral surface of the prismatic structure, so that the electromagnetic coil 210 forms a square ring structure, and the electromagnetic coil 210 is in contact with the peripheral surface thereof, and the size of the square ring structure is the same as that of the prismatic structure; or the permanent magnet is a cylindrical structure, and the electromagnetic coil 210 is wrapped around the peripheral surface of the cylindrical structure, so that the electromagnetic coil 210 forms a circular ring structure, and the electromagnetic coil 210 is in contact with the peripheral surface thereof, and the size of the circular ring structure is the same as that of the cylindrical structure.

[0061] In this way, the peripheral surface of the permanent magnet 300 is in contact with the electromagnetic coil 210, so that the distribution of the magnetic field generated by the permanent magnet 300 and the magnetic field generated by the electromagnetic module 200 tends to be the same, and the magnetic field distribution of the permanent magnet 300 is avoided to be affected by the electromagnetic module 200.

[0062] Of course, in other embodiments, the permanent magnet 300 can also be other structures other than the columnar structure, and the electromagnetic coil 210 can be separately arranged from the permanent magnet 300.

[0063] In an optional embodiment, the number of turns of the electromagnetic coil 210 is 10-100 turns, and the range of the current is 0-30A. Alternatively, the number of turns of the electromagnetic coil 210 is 100 turns, and the range of the current is ±15A, and the simulation results are as shown in Figure 4 As shown, when the current is -15A, the maximum magnetic field strength of the magnetic group a is 22.1mT; when the current is 0, the maximum magnetic field strength of the magnetic group a is 19.7mT; and when the current is +15A, the maximum magnetic field strength of the magnetic group a is 17.3mT. Therefore, the change of the current of the electromagnetic coil 210 has a ±2.4mT influence on the magnetic field of the permanent magnet 300.

[0064] According to the simulation results, with the consumption of the target material 800, without changing the position of the magnetic group a relative to the back plate 100, by adjusting the current of the electromagnetic coil 210, the magnetic field generated by the magnetic field can be overall enhanced or weakened to keep the magnetic field strength on the surface of the target material 800 stable, and solve the problem of process change caused by the increase of the magnetic field strength on the surface of the target material 800. Moreover, only the magnetic field strength generated by the electromagnetic coil 210 is small, and the permanent magnet 300 is needed to participate in order to provide a magnetic field sufficient to constrain the direction of the plasma movement.

[0065] Based on the disclosed magnetic control device, the embodiment of the present application further discloses a semiconductor process equipment, which comprises the magnetic control device in the above embodiment. In this way, the magnetic control device of the semiconductor process equipment is provided with the permanent magnet 300 and the electromagnetic module 200, which does not change the magnetic field distribution of the magnetic control device, provides a larger magnetic field to restrict the movement direction of the plasma, and can reduce the magnetic field strength of the magnetic control device by adjusting the current of the electromagnetic module 200, so as to keep the magnetic field strength on the surface of the target material 800 constant, avoid affecting the bombardment position and the bombardment rate of the plasma, and ensure the uniformity of film deposition.

[0066] Optionally, as shown in Figure 5 The semiconductor process equipment further comprises a chamber body 710, the chamber body 710 is provided with a susceptor 720 and a target material 800, the susceptor 720 is used for carrying a wafer, the target material 800 is located above the susceptor 720, and the magnetic control device is located above the target material 800. In this way, the atoms sputtered from the target material 800 can be deposited on the surface of the wafer, and with the consumption of the target material 800, the distance between the surface of the target material 800 and the magnetic control device decreases, and the magnetic field strength on the surface of the target material 800 increases. Therefore, by adjusting the current of the electromagnetic module 200, the strength of the magnetic field generated by the magnetic control device is reduced, so that the magnetic field strength on the surface of the target material 800 remains constant.

[0067] Optionally, the semiconductor process equipment further comprises an upper electrode device 730, the upper electrode device 730 is located at the top of the chamber body 710, and the magnetic control device is located inside the upper electrode device 730. In order to control the temperature of the target material 800 in the magnetic control sputtering process, deionized water is introduced into the upper electrode device 730 to cool the target material 800. The outside of the upper electrode device 730 is further provided with a second power supply 620, the second power supply 620 is electrically connected with the upper electrode device 730 to provide the power required by the magnetic control sputtering.

[0068] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments, and the above specific embodiments are only illustrative but not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the protection scope of the claims.

Claims

1. A magnetically controlled device, characterized in that, The device includes a backplate (100) and multiple magnetic groups (a), which cooperate to form a horizontal magnetic field for confining the direction of plasma motion. Each magnetic group (a) includes an electromagnetic module (200) and a permanent magnet (300), both of which are disposed on the backplate (100). The electromagnetic module (200) includes an electromagnetic coil (210) which is arranged around the permanent magnet (300). The magnetic field strength generated by the magnetic control device can be adjusted by adjusting the current flowing through the electromagnetic coil (210).

2. The magnetic control device according to claim 1, characterized in that, The back plate (100) has a slot (110) along its thickness direction, and the electromagnetic coil (210) and the permanent magnet (300) are both located in the slot (110).

3. The magnetic control device according to claim 2, characterized in that, The slot (110) includes a first slot (111) and a second slot (112) connected in sequence. The first slot (111) and the second slot (112) are arranged in sequence along the thickness direction of the back plate (100). The permanent magnet (300) is provided with a first magnetic column (310). The electromagnetic coil (210) and the permanent magnet (300) are both located in the first slot (111), and the first magnetic column (310) is located in the second slot (112).

4. The magnetic control device according to claim 3, characterized in that, The permanent magnet (300) is further provided with a second magnetic post (320), which is opposite to the first magnetic post (310) and is located outside the slot (110). Each of the permanent magnets (300) includes a first permanent magnet (301) and a second permanent magnet (302). The second magnetic post (320) of the first permanent magnet (301) has opposite magnetic properties to the second magnetic post (320) of the second permanent magnet (302). The second magnetic post (320) of each of the first permanent magnets (301) is magnetically connected through a first magnetic conductor, and the second magnetic post (320) of each of the second permanent magnets (302) is magnetically connected through a second magnetic conductor.

5. The magnetic control device according to claim 4, characterized in that, The first magnetic conductive component is a first magnetic conductive plate (410), and the first magnetic conductive plate (410) is magnetically attracted to the first permanent magnet (301); And / or, the second magnetic conductive element is a second magnetic conductive plate (420), which magnetically engages with the second permanent magnet (302).

6. The magnetic control device according to claim 5, characterized in that, Both the first magnetic plate (410) and the second magnetic plate (420) are provided with a plurality of third slots (400a), and each third slot (400a) corresponds to a second magnetic post (320), with each second magnetic post (320) extending into the corresponding third slot (400a).

7. The magnetic control device according to claim 2, characterized in that, The back plate (100) is provided with an electrical connection hole (120) for the power supply connection line (611) to pass through. The electrical connection hole (120) is connected to the slot (110) so that the first power supply (610) is electrically connected to the electromagnetic coil (210) through the electrical connection line (611).

8. The magnetic control device according to claim 7, characterized in that, The magnetic control device further includes a rotating mechanism (500), which is connected to the back plate (100) and can drive the back plate (100) to rotate. The rotating mechanism (500) includes a rotating brush (510) located at the center of the back plate (100), and the rotating brush (510) is provided with a wire hole (511), and the electrical connection hole (120) communicates with the wire hole (511).

9. The magnetic control device according to claim 1, characterized in that, The permanent magnet (300) has a columnar structure, and the electromagnetic coil (210) is in contact with the peripheral surface of the columnar structure.

10. A semiconductor process apparatus, characterized in that, Includes the magnetic control device according to any one of claims 1-9.

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