Battery piece grid line processing method

Abstract

The invention provides a battery piece grid line processing method. The battery piece grid line processing method comprises the steps that a battery piece is electroplated; the electroplating comprises first-time copper grid line electroplating and second-time copper grid line electroplating; the first copper plating solution is used for carrying out first-time copper grid line electroplating on the battery piece, the second copper plating solution is used for carrying out second-time copper grid line electroplating on the battery piece, the copper ion content of the first copper plating solution is smaller than that of the second copper plating solution, and the hydrogen ion content of the first copper plating solution is larger than that of the second copper plating solution. According to the technical scheme provided by the invention, the problems of low grid line binding force and easy falling of the grid line in the solar cell electroplated with the copper grid line in the prior art are effectively solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cell production, and particularly relates to a cell piece grid line processing method. BACKGROUND

[0002] The copper interconnection solar cell has the advantages of low cost, high photoelectric conversion rate and good stability, is increasingly widely applied, and is rich in copper resources and suitable for large-scale production.

[0003] The existing copper interconnection heterojunction cell performs cleaning and texturing treatment on a single crystal silicon wafer, deposits intrinsic amorphous silicon and N-type amorphous silicon films on the front surface of the silicon wafer, deposits intrinsic amorphous silicon and P-type amorphous silicon films on the back surface of the silicon wafer, plates a transparent conductive film on the amorphous silicon, plates a copper seed layer on the transparent conductive film, makes a grid line pattern by using exposure and development technology, and performs copper grid line and tin protection layer plating on the copper seed layer by using electrolytic cell effect in copper and tin plating solutions.

[0004] In the prior art, the binding force of the plated copper grid line is low, the grid line is prone to falling off, the module reliability is poor, the product qualification rate is low, and the product is prone to damage during conveying. SUMMARY

[0005] One technical problem to be solved by the present application is that in the solar cell with plated copper grid lines, the grid line has low binding force and is prone to falling off.

[0006] To solve the above technical problem, the present application provides a cell piece grid line processing method.

[0007] The cell piece grid line processing method provided by the present application comprises: electroplating a cell piece; the electroplating comprises first-time copper grid line plating and second-time copper grid line plating; the cell piece is subjected to first-time copper grid line plating by using a first copper plating solution, and is subjected to second-time copper grid line plating by using a second copper plating solution; the copper ion content of the first copper plating solution is less than that of the second copper plating solution, and the hydrogen ion content of the first copper plating solution is greater than that of the second copper plating solution.

[0008] In some embodiments, the copper ion content of the first copper plating solution is 20 g / L to 30 g / L, and the sulfuric acid content of the first copper plating solution is 150 g / L to 170 g / L.

[0009] In some embodiments, the copper ion content of the second copper plating solution is 50 g / L to 70 g / L, and the sulfuric acid content of the second copper plating solution is 70 g / L to 90 g / L.

[0010] In some embodiments, the second copper plating solution comprises multiple groups, and any one group of the second copper plating solution is selected for second-time copper grid line plating.

[0011] In some embodiments, the electroplating further comprises electroplating tin grid lines after the second electroplating of the copper grid lines, and the electroplating of the tin grid lines uses a tin methanesulfonic acid electroplating solution.

[0012] In some embodiments, the first electroplating of the copper grid lines and the second electroplating of the copper grid lines obtain a grid line height of 8-10 μm, and the electroplating of the tin grid lines obtains a grid line height of 2-4 μm.

[0013] In some embodiments, the method for processing the grid lines of the battery piece further comprises a preceding step of: wrapping the edges of the battery piece with a copper seed layer; coating the surface of the battery piece with a photosensitive adhesive; using laser printing to cause partial denaturation of the photosensitive adhesive, and the denatured region of the photosensitive adhesive coincides with the distribution region of the grid lines to be processed of the battery piece; removing the photosensitive adhesive in the denatured region of the photosensitive adhesive.

[0014] In some embodiments, the thickness of the photosensitive adhesive is 10-15 μm.

[0015] In some embodiments, the method for processing the grid lines of the battery piece further comprises a subsequent step of: removing all the photosensitive adhesive using an alkaline solution; removing the copper seed layer using an acidic solution; performing light injection treatment on the battery piece.

[0016] In some embodiments, the light injection treatment temperature is 200-220 °C, and the duration is 60-120 s.

[0017] By the above technical solution, the method for processing the grid lines of the battery piece provided by the present application first uses a first copper electroplating solution with a low pH value to electroplate the copper grid lines, which has better adhesion and can effectively avoid the problem of grid line falling off; then uses a second copper electroplating solution with a high pH value to electroplate the copper grid lines, which has high electroplating efficiency, thereby improving the production efficiency. The technical solution of the present application effectively solves the problem of low adhesion of the grid lines and easy falling off of the grid lines in the solar cell with electroplated copper grid lines in the prior art. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the following embodiment or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0019] Figure 1A flow chart of the battery piece grid line processing method is shown. Figure 2 A grid line crystallization diagram of the first time of electroplating copper grid line of the battery piece grid line processing method is shown. Figure 1 Figure 3 A grid line crystallization diagram of the second time of electroplating copper grid line of the battery piece grid line processing method is shown. Figure 1 Figure 4 A cross-sectional structure schematic diagram of the product of the battery piece grid line processing method is shown. Figure 1

[0020] Explanation of reference signs: 10, N-type monocrystalline silicon piece; 20, intrinsic amorphous silicon; 30, N-type amorphous silicon film; 40, P-type amorphous silicon film; 50, transparent conductive film; 60, copper seed layer; 70, electroplated copper grid line; 80, electroplated tin grid line. DETAILED DESCRIPTION

[0021] The embodiments of the present application will be further described in conjunction with the drawings and examples. The detailed description and drawings of the following examples are used to illustrate the principles of the present application, but cannot be used to limit the scope of the present application, and the present application can be implemented in many different forms, not limited to the specific embodiments of the present application, but includes all technical solutions falling within the scope of the claims.

[0022] The present application provides these embodiments in order to make the present application thorough and complete, and fully express the scope of the present application to those skilled in the art. It should be noted that: unless otherwise specified, the relative arrangement of components and steps, the composition of materials, numerical expressions and values set forth in these embodiments should be interpreted as merely exemplary, and not as a limitation.

[0023] It should be noted that, in the description of the present application, unless otherwise specified, the meaning of "a plurality of" is greater than or equal to two; the orientation or position relationship indicated by the terms "upper", "lower", "left", "right", "inner", "outer" and the like is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0024] ​​​In addition, "first", "second", and similar words used in the present application do not indicate any order, number or importance, but are only used to distinguish different parts. "Vertical" is not strictly vertical, but within the allowable error range. "Parallel" is not strictly parallel, but within the allowable error range. "Include" or "contain" and similar words mean that the elements before the word cover the elements listed after the word, and do not exclude the possibility of also covering other elements.

[0025] It should also be noted that in the description of the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be directly connected, or indirectly connected through an intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. When it is described that a specific device is located between the first device and the second device, there can be or can not be an intermediate device between the specific device and the first device or the second device.

[0026] All terms used in the present application have the same meaning as understood by those skilled in the art to which the present application belongs, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art, and should not be interpreted in an idealized or extremely formalized sense, unless explicitly defined here.

[0027] Techniques, methods and devices known to those skilled in the relevant art can not be discussed in detail, but in appropriate cases, the techniques, methods and devices should be considered as part of the specification.

[0028] As Figures 1 to 4 The battery sheet grid line processing method disclosed by the embodiments of the present application comprises the steps of: Electroplating the battery sheet; The electroplating includes first electroplating copper grid lines and second electroplating copper grid lines; The first electroplating copper grid lines of the battery sheet is carried out by using the first copper plating solution, and the second electroplating copper grid lines of the battery sheet is carried out by using the second copper plating solution, the copper ion content of the first copper plating solution is less than that of the second copper plating solution, and the hydrogen ion content of the first copper plating solution is greater than that of the second copper plating solution.

[0029] The technical scheme of the embodiment of the present application is used to firstly perform electroplating of the copper grid line by using the first plating solution with low pH value, the binding force of the electroplated copper grid line is better, and the problem of grid line falling off can be effectively avoided; and then the electroplating of the copper grid line is performed by using the second plating solution with high pH value, the electroplating efficiency of the second plating solution is high, and thus the production efficiency is improved. The technical scheme of the embodiment of the present application effectively solves the problem of low binding force of the grid line and easy falling off of the grid line in the solar cell with electroplated copper grid line in the prior art.

[0030] It should be noted that the electroplated copper grid line falling off mainly occurs at the contact position of the grid line and the copper seed layer, and therefore the first plating solution with high acidity is used to improve the binding force of the contact position in the present application, so as to avoid the grid line falling off. However, the copper ion content in the first plating solution is small, and therefore the plating process is slow. In order to ensure the production efficiency, the second plating solution with higher copper ion content is used to perform the second electroplating of the copper grid line after the first electroplating of the copper grid line is completed. In the prior art, in order to ensure the production efficiency, only one plating solution with more copper ion content is usually used to perform single plating of copper, and the proportion of the broken grid line obtained by this method is about 6.5%, and the welding tension is less than 1.2N.

[0031] As shown in Figures 1 to 4 , in the technical scheme of the present embodiment, the copper ion content in the first plating solution is 20g / L to 30g / L, and the sulfuric acid content in the first plating solution is 150g / L to 170g / L. The sulfuric acid content in the first plating solution is 5 times to 8.5 times of the copper ion content. The first plating solution with this concentration ratio can effectively improve the atomic arrangement density of the grid line crystallization, so that the binding force of the grid line is greater and is not easy to fall off, as shown in Figure 2 .

[0032] As shown in Figures 1 to 4 , in the technical scheme of the present embodiment, the copper ion content in the second plating solution is 50g / L to 70g / L, and the sulfuric acid content in the second plating solution is 70g / L to 90g / L. The sulfuric acid content in the second plating solution is 1 times to 1.8 times of the copper ion content. Compared with the first plating solution, the copper ion content in the second plating solution is increased and the hydrogen ion content is decreased. In the second plating solution, the electroplating efficiency of the second electroplating of the copper grid line is high, and the growth speed of the grid line is fast, thereby improving the production efficiency. As shown in Figure 3 , the copper grid line grown in the second plating solution, compared with Figure 2 and Figure 3 , it can be seen that the atomic arrangement of the copper grid line grown in the first plating solution is more compact, and therefore the binding force is greater.

[0033] As shown in Figures 1 to 4As shown in the technical solution of this embodiment, the second copper plating solution includes multiple sets, and any set of the second copper plating solution can be used for the second copper grid line plating. Since the first copper grid line plating only needs to be performed at the contact position between the grid line and the copper seed layer, the time required for the first copper grid line plating is relatively short. By using multiple sets of second copper plating solutions, after the first copper grid line plating is completed, the battery cell is placed in one set of second copper plating solutions for the second copper grid line plating. At the same time, new battery cells can be placed in the first copper plating solution for the first copper grid line plating. After the first copper grid line plating is completed, the second copper grid line plating of the previous battery cell is not yet completed, so the new battery cell can be placed in other sets of second copper plating solutions. By setting multiple sets of second copper plating solutions, multiple battery cells can be simultaneously subjected to the second copper grid line plating, avoiding the problem that the battery cells cannot be subjected to the second copper grid line plating in time after the first copper grid line plating is completed due to the different completion times of the first and second copper grid line plating, thus further improving production efficiency. In this embodiment, three sets of second copper plating solutions are used.

[0034] like Figure 1 and Figure 4 As shown, in this embodiment, the electroplating process further includes tin gate plating. Tin gate plating is performed after the second copper gate plating is completed, using a tin methanesulfonate plating solution. By electroplating the tin gate, tin gates are formed at one end of the silicon wafer that forms the copper gate, protecting the copper gates and preventing them from oxidizing easily when exposed, thus improving their lifespan.

[0035] like Figures 1 to 4 As shown, in the technical solution of this embodiment, the combined gate height of the first and second copper gate plating is 8μm to 10μm, wherein the gate height obtained in the first copper gate plating is 2 to 2.5μm, and the gate height obtained in the second copper gate plating is 6 to 7.5μm, with a ratio of approximately 1:3. The gate height obtained by the tin gate plating is 2μm to 4μm. The first and second copper gate platings constitute the total copper gate plating 70. When the copper gate plating 70 and the tin gate plating 80 are high, the gate lines themselves will block some of the light illuminating the silicon wafer surface, resulting in a reduction in the light-receiving area of ​​the battery itself; when the copper gate plating 70 and the tin gate plating 80 are low, the resistance increases, and the power loss increases.

[0036] like Figure 1 As described above, in the technical solution of this embodiment, the battery cell grid line processing method further includes a preliminary step: Edge wrapping of the battery cell with copper-plated seed layer; Photosensitive emulsion is coated onto the surface of the battery cells; Laser printing is used to denature a portion of the photosensitive adhesive, and the denatured area of ​​the photosensitive adhesive matches the grid line distribution area of ​​the battery cell to be processed. removing the photoresist in the denatured region.

[0037] The method further comprises the following steps before the edge wrapping: performing a texturing cleaning process on the N-type monocrystalline silicon wafer 10; depositing intrinsic amorphous silicon 20 and N-type amorphous silicon film 30 on the front surface of the N-type monocrystalline silicon wafer 10, and depositing intrinsic amorphous silicon 20 and P-type amorphous silicon film 40 on the back surface of the silicon wafer; depositing a transparent conductive film 50 (TCO conductive layer) on the amorphous silicon; depositing a copper seed layer 60 on the transparent conductive film.

[0038] Then, the edge wrapping glue is wrapped on the four edges and corners of the cell wafer, the width of the edge wrapping glue is less than or equal to 50 μm, and the thickness of the edge wrapping glue is 10 μm to 15 μm. The photoresist needs to cover the entire copper seed layer 60 during coating; the laser printing area is designed according to the design pattern of the grid line, so that the photoresist at the grid line distribution position is denatured under the action of laser, and then the denatured photoresist is removed by using an alkaline solution to expose the corresponding position of the copper seed layer 60, thereby performing electroplating.

[0039] As Figure 1 described, in the technical solution of the embodiment, the thickness of the photoresist is 10 μm to 15 μm. The thickness of the photoresist is greater than or equal to the height of the electroplated copper grid line 70, which plays a certain limiting role during copper plating to avoid problems such as the tilting of the electroplated copper grid line. When the thickness difference between the photoresist and the electroplated copper grid line 70 is large, it is difficult for the first copper plating solution and the second copper plating solution to contact the copper seed layer 60 during electroplating, and the electroplating efficiency is low.

[0040] As Figure 1 described, in the technical solution of the embodiment, the cell wafer grid line processing method further comprises the following subsequent steps: removing all the photoresist by using an alkaline solution; removing the copper seed layer by using an acidic solution; performing a light injection process on the cell wafer.

[0041] The alkaline solution can be selected from one or more of sodium hydroxide and potassium hydroxide; after the photoresist is removed, the copper seed layer and the oxide film layer that do not have a grid line below are exposed, and the part is removed by using dilute sulfuric acid, so that the transparent conductive film 50, the N-type amorphous silicon film 30, and the P-type amorphous silicon film below are exposed, and the conversion of light energy is realized.

[0042] As Figure 1 described, in the technical solution of the embodiment, the light injection process temperature is 200°C to 220°C, and the duration is 60 s to 120 s. Through the light injection process, the electron concentration and the hole concentration are improved, thereby further improving the conversion efficiency of the cell.

[0043] In the technical solution of Example One, the edges of the battery piece are wrapped with the edge wrapping glue, the width of the edge wrapping glue is 45 μm, and the thickness of the edge wrapping glue is 12 μm; the surface of the battery piece is coated with the photosensitive glue, and the thickness of the photosensitive glue is 13 μm. In the technical solution of Example One, the content of copper ions in the first copper plating solution is 25 g / L, and the content of sulfuric acid is 150 g / L; the content of copper ions in the second copper plating solution is 56 g / L, and the content of sulfuric acid is 75 g / L; before electroplating, the battery piece is first treated with an alkaline solution to remove oil, then repeatedly washed with water to remove residual alkaline substances on the surface of the battery piece, then activated with sulfuric acid, then plated with copper by using the first copper plating solution and the second copper plating solution in two steps, and the copper grid line is controlled to be 8 μm, then the first copper plating solution and the second copper plating solution on the surface of the battery piece are removed by multiple water washing, then tin electroplating solution is used for electroplating tin, wherein the tin grid line height is controlled to be 2 μm, then the battery piece is cleaned and dried. The remaining photosensitive glue and copper seed layer 60 on the surface of the battery piece are removed, the battery piece is subjected to light injection, wherein the temperature of the light injection is 210°C, and the time is 100 s. The grid line bonding force of the battery piece is tested. The broken grid ratio of the battery piece using the technical solution of Example One is 1.5%, and the welding tension is 2.2 N.

[0044] The technical solution of Example Two is different from the technical solution of Example One in that the content of copper ions in the first copper plating solution is 26 g / L, and the content of sulfuric acid is 160 g / L, and the remaining steps are the same as those of Example One. The broken grid ratio of the battery piece using the technical solution of Example Two is 1.4%, and the welding tension is 2.3 N.

[0045] The technical solution of Example Three is different from the technical solution of Example Two in that the content of copper ions in the second copper plating solution is 58 g / L, and the content of sulfuric acid is 80 g / L, and the remaining steps are the same as those of Example Two. The broken grid ratio of the battery piece using the technical solution of Example Three is 1.4%, and the welding tension is 2.45 N.

[0046] The technical solution of Example Four is different from the technical solution of Example Three in that the content of sulfuric acid in the second copper plating solution is 85 g / L, and the height of the copper grid line is controlled to be 10 μm, and the remaining steps are the same as those of Example Three. The broken grid ratio of the battery piece using the technical solution of Example Three is 1.3%, and the welding tension is 2.45 N.

[0047] From the first embodiment to the fourth embodiment, it can be seen that the first plating copper solution with high hydrogen ion content (i.e. strong acidity) is used to carry out the first-time electroplating of the copper grid line, and then the second plating copper solution with high copper ion content is used to carry out the second-time electroplating of the copper grid line, so that the grid breakage rate of the battery piece can be greatly reduced, and the welding tension can be improved. On this basis, the concentration of the first plating copper solution, the concentration of the second plating copper solution and the size of the grid line can be adjusted to further reduce the grid breakage rate and ensure the product quality of the battery piece.

[0048] It can be seen from the above that the production process of the copper interconnection heterojunction battery includes the following steps. First, the N-type monocrystalline silicon wafer is subjected to texturing cleaning treatment. Then, intrinsic amorphous silicon and N-type amorphous silicon film are deposited on the front surface of the silicon wafer, and intrinsic amorphous silicon and P-type amorphous silicon film are deposited on the back surface of the silicon wafer. Then, a transparent conductive film (TCO conductive layer) is plated on the amorphous silicon. Second, a copper seed layer is plated on the transparent conductive film (the semi-finished product after the seed layer deposition is referred to as a yellow film piece). The grid line pattern is made by using exposure and development technology. Finally, the copper seed layer is subjected to electrolytic cell effect electroplating in the copper electroplating solution and the tin electroplating solution to form the copper grid line and the tin protective layer. The production process of the electroplated copper grid line includes the following steps. First, the four corner edges and the corner positions of the yellow film piece are wrapped with edge wrapping glue, the width of the edge wrapping glue is less than or equal to 50 μm, and the thickness of the edge wrapping glue is 10 to 15 μm. Second, the front and back surfaces of the yellow film piece are coated with photosensitive glue, and the part of the yellow film piece exposed to the copper oxide is completely covered, and the thickness of the photosensitive glue is controlled to be 10 to 15 μm. Third, the given pattern is printed on the photosensitive glue film according to the designed grid line pattern, and the photosensitive glue film is subjected to denaturation after being exposed to light, so that the unexposed area can be distinguished. Fourth, the exposed photosensitive glue area is removed by using an alkaline solution to expose the underlying copper oxide film layer. Fifth, the copper grid line is electroplated in the copper electroplating solution, the height of the copper grid line is controlled to be 8 to 10 μm, the first copper plating tank is changed to a “high-acid low-copper type copper plating solution”, the formula of which is that the copper ion content is 20 to 30 g / L, the content of the additive is a little, the priority is high, and the solution of the last three copper plating tanks is a “high-copper low-acid type copper plating solution”, the formula of which is that the copper ion content is 50 to 70 g / L, The content is 70 to 90 g / L, and a little additive, that is, the battery piece is first fixed in the "high-acid low-copper type copper plating solution" of the first copper tank for base plating, and then randomly plated in the "high-copper low-acid type copper plating solution" of the last three copper tanks to increase the thickness; tin grid lines are plated in a methyl sulfonic acid tin plating solution, the tin grid line height is controlled at 2 to 4 μm, and the plating process is: oil removal→water washing→water washing→sulfuric acid activation→copper plating (first copper tank)→copper plating (last three copper tanks)→water washing→water washing→water washing→tin plating→water washing→water washing→hot water washing→drying; the sixth step is film removal and etching back: first, all the photosensitive glue and mask materials are removed in an alkaline (NaOH, KOH, etc.) solution, second, the copper seed layer and the copper oxide film layer in the non-grid line area are removed in a dilute sulfuric acid solution, and finally only the grid lines are left on the surface of the ITO conductive film; the seventh step is to perform photo injection treatment on the battery piece after film removal and etching back, the photo injection temperature is 200 to 220 degrees Celsius, and the time is 60 to 120 seconds; the eighth step is to complete the battery piece manufacturing, and the battery grid line bonding force test is performed.

[0049] So far, the embodiments of the present application have been described in detail. In order to avoid obscuring the concept of the present application, some details known in the art are not described. Those skilled in the art can fully understand how to implement the technical solutions of the present application according to the above description.

[0050] Although some specific embodiments of the present application have been described in detail through examples, those skilled in the art should understand that the above examples are only for illustration, not for limiting the scope of the present application. Those skilled in the art should understand that the above embodiments can be modified or some technical features can be replaced equivalently without departing from the scope and spirit of the present application. In particular, as long as there is no structural conflict, each technical feature mentioned in each embodiment can be combined in any way.

Claims

1. A battery tabbing method, comprising: The method comprises the steps of: ​ electroplating the battery piece; the electroplating comprises first electroplating copper grid lines and second electroplating copper grid lines; the first electroplating copper grid lines are performed on the battery piece by using a first copper plating solution, and the second electroplating copper grid lines are performed on the battery piece by using a second copper plating solution, the copper ion content of the first copper plating solution is less than that of the second copper plating solution, and the hydrogen ion content of the first copper plating solution is greater than that of the second copper plating solution.

2. The battery tab processing method of claim 1, wherein, The copper ion content of the first copper plating solution is 20 g / L to 30 g / L, and the sulfuric acid content of the first copper plating solution is 150 g / L to 170 g / L.

3. The battery tabbing method of claim 1, wherein, The copper ion content of the second copper plating solution is 50 g / L to 70 g / L, and the sulfuric acid content of the second copper plating solution is 70 g / L to 90 g / L.

4. The battery tabbing method of claim 1, wherein, The second copper plating solution comprises multiple groups, and the second electroplating copper grid lines are selected from any one group of the second copper plating solution.

5. The battery tabbing method of claim 1, wherein, The electroplating further comprises electroplating tin grid lines, the electroplating tin grid lines are performed after the second electroplating copper grid lines, and the electroplating tin grid lines adopt a methanesulfonic acid tin electroplating solution.

6. The battery tabbing method of claim 5, wherein, The height of the grid lines obtained by the first electroplating copper grid lines and the second electroplating copper grid lines is 8 μm to 10 μm, and the height of the grid lines obtained by the electroplating tin grid lines is 2 μm to 4 μm.

7. The battery tabbing method according to any one of claims 1 to 6, wherein, The battery piece grid line processing method further comprises a preceding step: the battery piece with a copper plating seed layer is edge coated; a photosensitive adhesive is coated on the surface of the battery piece; a part of the photosensitive adhesive is denatured by laser printing, and the denatured area of the photosensitive adhesive is consistent with the distribution area of the battery piece grid lines to be processed; the photosensitive adhesive in the denatured area of the photosensitive adhesive is removed.

8. The battery tabbing method of claim 7, wherein, The thickness of the photosensitive adhesive is 10 μm to 15 μm.

9. The battery tabbing method of claim 7, wherein, The battery piece grid line processing method further comprises a subsequent step: all the photosensitive adhesive is removed by using an alkaline solution; the copper seed layer is removed by using an acidic solution; the battery piece is subjected to light injection treatment.

10. The battery tabbing method of claim 9, wherein, The light injection treatment temperature is 200°C to 220°C, and the duration is 60 s to 120 s.

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