Annealing device for manufacturing silicon carbide wafer

Abstract

The invention relates to the technical field of semiconductor material manufacturing, comprises an automatic adjusting assembly and an auxiliary adjusting assembly, and discloses an annealing device for silicon carbide wafer manufacturing. Current is input through the automatic adjusting assembly and the auxiliary adjusting assembly; the automatic adjusting assembly and the auxiliary adjusting assembly control the annealing position of the silicon carbide wafer to be adjusted, so that the whole silicon carbide wafer is uniformly annealed; stable working current is input through the automatic adjusting assembly and the auxiliary adjusting assembly, one side of the annealed silicon carbide wafer is controlled to be in an inclined state, workers can conveniently collect the silicon carbide wafer in the later period, and therefore the overall production efficiency of the silicon carbide wafer is further improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor material manufacturing, more particularly to an annealing device for silicon carbide wafer manufacturing, specifically to an annealing device for silicon carbide wafer heat treatment process, and particularly to a silicon carbide wafer annealing device with wafer clamping posture automatic adjustment function. BACKGROUND

[0002] Silicon carbide (SiC) is a representative of the third generation of semiconductor materials, which has broad application prospects in high-temperature, high-frequency and high-power electronic device fields due to its excellent wide bandgap, high thermal conductivity, high breakdown field strength and other characteristics. In the manufacturing process of silicon carbide wafers, annealing is one of the most important process steps, which is mainly used to eliminate internal stress generated in the wafer during cutting, grinding and other processes, repair lattice damage, activate dopants and improve material electrical properties. The uniformity of the annealing process directly determines the quality and performance consistency of the final silicon carbide wafer; At present, the commonly used silicon carbide wafer annealing device usually adopts a fixed or simply translated clamp to carry the wafer. These clamps fix the wafer at a specific position and posture during high-temperature annealing. However, this fixed mode has significant defects: Annealing uniformity problem: In a high-temperature environment, there may be inherent non-uniformity in the thermal field (especially the radiation thermal field) (such as furnace temperature gradient, heating element radiation angle difference, etc.). When the wafer is fixed in a static orientation, the different surface areas of the wafer facing the heat source (such as the front and back surfaces, the center and the edges) may receive different amounts of heat. This can cause the wafer to be unevenly heated during annealing, which can lead to uneven stress distribution within the wafer, inconsistent defect repair, and differences in dopant activation efficiency, which can seriously affect the overall quality and batch uniformity of the wafer; Wafer pick-and-place operation inconvenience: After high-temperature annealing is completed, the wafer is extremely hot and fragile. When the traditional clamp is opened after cooling, the wafer is usually in a horizontal or difficult-to-grab position. The operator needs to use special tools (such as a vacuum suction pen, tweezers) to carefully pick the wafer from the tightly arranged or flat clamps. This process is not only inefficient, but also has a high risk of operation: on the one hand, it is difficult to accurately pick the wafer in a small space, and improper operation can easily cause scratches or even breakage of the wafer surface, resulting in costly material loss; on the other hand, for the wafer with residual heat after high temperature, close-range manual operation also poses a safety hazard; Therefore, there is an urgent need for an annealing device for silicon carbide wafer manufacturing to solve the above technical problems. SUMMARY

[0003] In order to overcome the above-mentioned defects of the prior art, the present application provides an annealing device for silicon carbide wafer manufacturing to solve the problems existing in the background art.

[0004] The application provides the following technical scheme: an annealing device for manufacturing silicon carbide wafers, comprising an annealing device, characterized in that: a sealing cover is arranged on the side of the annealing device, an electric control stretching device is arranged on the side of the sealing cover away from the annealing device, and an automatic adjusting assembly and an auxiliary adjusting assembly are sequentially arranged on the side of the electric control stretching device. The automatic adjusting assembly and the auxiliary adjusting assembly input electric current so as to adjust the annealing position of the silicon carbide wafer and assist the staff in taking the annealed silicon carbide wafer.

[0005] Further, the automatic adjusting assembly comprises a transmission motor, the transmission motor is arranged on the side of the electric control stretching device away from the sealing cover, a moving plate is arranged on the side of the electric control stretching device close to the sealing cover, a transmission rod is arranged at the output end of the transmission motor, one end of the transmission rod penetrates into the moving plate, and a second placing plate is arranged at the end of the transmission rod. The auxiliary adjusting assembly comprises an electric control hydraulic pressure providing device.

[0006] Further, the electric control hydraulic pressure providing device is arranged on the side of the electric control stretching device, and the arrangement position of the electric control hydraulic pressure providing device on the side of the electric control stretching device is close to the transmission motor, the electric control hydraulic pressure providing device comprises two groups of output ports, and the two groups of output ports sequentially comprise a second conveying pipe and a first conveying pipe.

[0007] Further, a first hollow ring plate is movably sleeved on the outer side of the transmission rod close to the second placing plate, one end of the second conveying pipe penetrates into the inner wall of the moving plate, and the end of the second conveying pipe is arranged in the first hollow ring plate, a first conveying hole is arranged in the transmission rod, and a second transmission groove is arranged in the second placing plate.

[0008] Further, the electric control hydraulic pressure providing device drives the hydraulic oil in the electric control hydraulic pressure providing device to be input into the first hollow ring plate through the second conveying pipe, and then to be transmitted into the second transmission groove arranged in the second placing plate through the first conveying hole arranged in the transmission rod. One end of the first conveying pipe away from the electric control hydraulic pressure providing device is provided with a second hollow ring plate, and an auxiliary supporting rod is movably sleeved on the inner wall of the second hollow ring plate.

[0009] Further, a first placing plate is arranged at one end of the auxiliary supporting rod away from the second hollow ring plate, a second conveying hole is arranged in the inner wall of the auxiliary supporting rod close to the second hollow ring plate, a first transmission groove is arranged in the first placing plate, and the electric control hydraulic pressure providing device drives the hydraulic oil in the electric control hydraulic pressure providing device to be transmitted into the second hollow ring plate through the first conveying pipe, and then to be transmitted into the first transmission groove through the second conveying hole.

[0010] Further, the geometric center points of the first placement plate and the second placement plate are on the same straight line, three groups of annealing plates are fixedly installed on the length direction of the side surfaces of the first placement plate and the second placement plate in sequence and equidistantly, the inner walls of the annealing plates are sequentially provided with first transmission cabins and second transmission cabins, and the first transmission cabin and the second transmission cabin are not communicated with each other, the first transmission cabin and the first transmission groove are in a mutual communication state, and the second transmission cabin and the second transmission groove are in a mutual communication state. The inside of each group of the annealing plates is provided with an auxiliary supporting rod.

[0011] Further, the inner walls of the top of the auxiliary supporting rod are sequentially and equidistantly provided with multiple groups of first hollow plates, the inner walls of the bottom of the auxiliary supporting rod are sequentially and equidistantly provided with multiple groups of second hollow plates, the inner walls of the first hollow plates away from the position of the annealing plate are movably sleeved with first limiting plates, the side surfaces of the first limiting plates close to the position of the auxiliary supporting rod are vertically provided with first springs, one end of the first spring away from the first limiting plate is vertically installed on the inner side surface of the first hollow plate, and the inside of the first hollow plate and the first transmission cabin are in a mutual communication state. The inner walls of each group of the second hollow plates away from the position of the auxiliary supporting rod are movably sleeved with second limiting plates.

[0012] Further, the inner walls of the top of one group of the second limiting plates are movably sleeved with extrusion plates, the inner side surfaces of the bottom of the extrusion plates are vertically provided with third springs, the bottom of the third spring is vertically installed on the inner wall of the second limiting plate, the side surfaces of each group of the second limiting plates close to the position of the auxiliary supporting rod are vertically provided with second springs, one end of the second spring away from the second limiting plate is vertically installed on the inner side surface of the second hollow plate, and the inside of the second hollow plate and the second transmission cabin are in a mutual communication state.

[0013] Technical effects and advantages of the present application: The automatic adjusting assembly and the auxiliary adjusting assembly input current, when the silicon carbide wafer placed on the surface of the annealing plate is annealed for a stable time, the automatic adjusting assembly and the auxiliary adjusting assembly control the annealing position of the silicon carbide wafer to adjust, so as to uniformly anneal the whole silicon carbide wafer.

[0014] The automatic adjusting assembly and the auxiliary adjusting assembly input stable working current, control one side of the annealed silicon carbide wafer to be in an inclined state, facilitate the staff to collect in the later period, and further improve the production efficiency of the whole silicon carbide wafer. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 It is a schematic diagram of the overall structure of the present application.

[0016] Figure 2 for Figure 1 the overall structure schematic diagram of the automatic adjusting assembly and the auxiliary adjusting assembly.

[0017] Figure 3 for Figure 2 the overall structure schematic diagram of the first placement plate and the second placement plate.

[0018] Figure 4 for Figure 3 the side sectional view of the second placement plate.

[0019] Figure 5 for Figure 3 the side sectional view of the first placement plate.

[0020] Figure 6 for Figure 3 the overall structure schematic diagram of the annealing plate.

[0021] Figure 7 for Figure 6 the side sectional view of the first hollow plate.

[0022] Figure 8 for Figure 6 the side sectional view of the second hollow plate.

[0023] The figure mark is: 1, annealing device; 101, sealing cover; 102, electric control stretching device; 1021, moving plate; 2, automatic adjusting assembly; 201, transmission motor; 202, transmission rod; 2021, first conveying hole; 203, first placement plate; 2031, first transmission groove; 204, annealing plate; 205, second placement plate; 2051, second transmission groove; 206, auxiliary supporting rod; 2061, second conveying hole; 207, first limiting plate; 208, second limiting plate; 209, first transmission cabin; 210, second transmission cabin; 211, first hollow plate; 212, first spring; 213, second hollow plate; 214, second spring; 215, extrusion plate; 216, third spring; 3, auxiliary adjusting assembly; 301, electric control hydraulic providing device; 302, first conveying pipe; 303, first hollow ring plate; 304, second hollow ring plate; 305, second conveying pipe. DETAILED DESCRIPTION

[0024] The technical solutions in the application will be described clearly and completely below in combination with the drawings in the application, and in addition, the forms of each structure described in the following embodiments are only examples, and the annealing device for manufacturing silicon carbide wafer involved in the application is not limited to each structure described in the following embodiments. All other embodiments obtained by those skilled in the art without making creative efforts belong to the scope protected by the application.

[0025] Referring to Figures 1-2 As shown in the figure, the application provides an annealing device for manufacturing silicon carbide wafer, which comprises an annealing device 1, a sealing cover 101 is installed on the side of the annealing device 1, an electric control stretching device 102 is installed on the side of the sealing cover 101 away from the annealing device 1, and an automatic adjusting assembly 2 and an auxiliary adjusting assembly 3 are sequentially arranged on the side of the electric control stretching device 102. The automatic adjusting assembly 2 and the auxiliary adjusting assembly 3 input electric current so as to adjust the annealing position of the silicon carbide wafer and assist the worker to take the silicon carbide wafer after annealing.

[0026] In the embodiment, the specific working process of the part of the application embodiments is as follows: the automatic adjusting assembly 2 and the auxiliary adjusting assembly 3 input electric current, when the silicon carbide wafer placed on the surface of the annealing plate 204 is annealed for a stable time, the automatic adjusting assembly 2 and the auxiliary adjusting assembly 3 control the annealing position of the silicon carbide wafer to be adjusted so as to uniformly anneal the whole silicon carbide wafer, and further ensure the annealing uniformity of the whole silicon carbide wafer; after the silicon carbide wafer is annealed, under the action of the automatic adjusting assembly 2 and the auxiliary adjusting assembly 3, one side of the silicon carbide wafer is controlled to be in an inclined state, which is convenient for the worker to collect later, thereby further improving the production efficiency of the whole silicon carbide wafer.

[0027] Referring to Figures 1-8 As shown in the figure, the application provides an annealing device for manufacturing silicon carbide wafer, which comprises an annealing device 1, a sealing cover 101 is installed on the side of the annealing device 1, an electric control stretching device 102 is installed on the side of the sealing cover 101 away from the annealing device 1, and an automatic adjusting assembly 2 and an auxiliary adjusting assembly 3 are sequentially arranged on the side of the electric control stretching device 102. The auxiliary adjusting assembly 3 comprises an electric control hydraulic pressure providing device 301, the electric control hydraulic pressure providing device 301 is installed on the side of the electric control stretching device 102, and the installation position of the electric control hydraulic pressure providing device 301 on the side of the electric control stretching device 102 is close to the transmission motor 201, the electric control hydraulic pressure providing device 301 comprises two groups of output ports, the two groups of output ports are sequentially provided with a second conveying pipe 305 and a first conveying pipe 302. The transmission rod 202 is movably sleeved with a first hollow ring plate 303 on the outer side near the second placement plate 205, one end of the second conveying pipe 305 penetrates the inner wall of the moving plate 1021, and the end of the second conveying pipe 305 is installed in the inside of the first hollow ring plate 303, the inside of the transmission rod 202 is provided with a first conveying hole 2021, and the inside of the second placement plate 205 is provided with a second transmission groove 2051; The electric control hydraulic pressure providing device 301 drives the hydraulic oil in the inside to be input into the inside of the first hollow ring plate 303 through the second conveying pipe 305, and then transmitted into the second transmission groove 2051 in the inside of the second placement plate 205 through the first conveying hole 2021 in the inside of the transmission rod 202; The end of the first conveying pipe 302 away from the electric control hydraulic pressure providing device 301 is installed with a second hollow ring plate 304, the inner wall of the second hollow ring plate 304 is movably sleeved with an auxiliary supporting rod 206, the end of the auxiliary supporting rod 206 away from the second hollow ring plate 304 is installed with a first placement plate 203, the inner wall of the auxiliary supporting rod 206 near the second hollow ring plate 304 is provided with a second conveying hole 2061, the inside of the first placement plate 203 is provided with a first transmission groove 2031, and the electric control hydraulic pressure providing device 301 drives the hydraulic oil in the inside to be transmitted into the inside of the second hollow ring plate 304 through the first conveying pipe 302, and then transmitted into the first transmission groove 2031 through the second conveying hole 2061; The geometric center points of the first placement plate 203 and the second placement plate 205 are on the same straight line, three groups of annealing plates 204 are fixedly installed on the adjacent sides of the first placement plate 203 and the second placement plate 205 in sequence and equidistantly along the length direction, the inner walls of the annealing plates 204 are provided with a first transmission cabin 209 and a second transmission cabin 210 in sequence, and the first transmission cabin 209 and the second transmission cabin 210 are not communicated with each other, the first transmission cabin 209 and the first transmission groove 2031 are in a state of mutual communication, and the second transmission cabin 210 and the second transmission groove 2051 are in a state of mutual communication; The inside of each group of the annealing plates 204 is provided with an auxiliary supporting rod 206, the inner walls of the top portions of the auxiliary supporting rods 206 are installed with multiple groups of first hollow plates 211 in sequence and equidistantly, the inner walls of the bottom portions of the auxiliary supporting rods 206 are installed with multiple groups of second hollow plates 213 in sequence and equidistantly, the inner walls of the first hollow plates 211 away from the annealing plates 204 are movably sleeved with first limiting plates 207, the first limiting plates 207 are vertically installed on the sides near the auxiliary supporting rods 206, one end of each first spring 212 away from the first limiting plate 207 is vertically installed on the inner side of the first hollow plate 211, and the inside of the first hollow plate 211 and the first transmission cabin 209 are in a state of mutual communication; The inner wall of the second limiting plate 208 is movably sleeved with the second hollow plate 213 far away from the auxiliary supporting rod 206, the inner wall of the top of a group of second limiting plates 208 is movably sleeved with the extrusion plate 215, the inner side of the bottom of the extrusion plate 215 is vertically installed with the third spring 216, the bottom of the third spring 216 is vertically installed on the inner wall of the second limiting plate 208, the side of each group of second limiting plates 208 close to the auxiliary supporting rod 206 is vertically installed with the second spring 214, the end of the second spring 214 far away from the second limiting plate 208 is vertically installed on the inner side of the second hollow plate 213, and the inside of the second hollow plate 213 and the second transmission cabin 210 are in a mutual flow state.

[0028] In the embodiment of the application, the automatic adjusting assembly 2 and the auxiliary adjusting assembly 3 are made of heat-resistant materials, and the spring force generated by the third spring 216 is greater than the spring force generated by the second spring 214.

[0029] The specific working process of the part of the application embodiment is as follows: The electric control stretching device 102 inputs current to control the movement of the moving plate 1021 and the annealing plate 204 to the outside of the annealing device 1, in the movement process, the electric control hydraulic pressure providing device 301 inputs stable working current, drives the hydraulic oil in the inside thereof to be transmitted to the second transmission groove 2051 through the second conveying pipe 305, the inside of the first hollow ring plate 303 and the first conveying hole 2021 in the inner wall of the transmission rod 202, the hydraulic oil in the inside of the second transmission groove 2051 is transmitted to the inside of the second transmission cabin 210, and then is transmitted to the inside of the second hollow plate 213 through the inside of the second transmission cabin 210, when the amount of the hydraulic oil in the inside of the second hollow plate 213 reaches a rated value, the second limiting plate 208 is driven to move away from the position of the second hollow plate 213, so as to form a limiting assembly at the bottom of the auxiliary supporting rod 206, and the unannealed silicon carbide wafer is placed on the limiting assembly by artificial in sequence; The electric control stretching device 102 inputs reverse current to control the silicon carbide wafer in the inside of the annealing plate 204 to be input to the inside of the annealing device 1 to perform annealing operation; After the silicon carbide wafer is annealed for a stable time, the electric control hydraulic pressure providing device 301 inputs stable working current, drives the hydraulic oil in the inside thereof to be transmitted to the first transmission groove 2031 through the first conveying pipe 302, the inside of the second hollow ring plate 304 and the second conveying hole 2061 in the inner wall of the auxiliary supporting rod 206, the hydraulic oil in the inside of the first transmission groove 2031 is transmitted to the inside of the first transmission cabin 209, and then is transmitted to the inside of the first spring 212 through the inside of the first transmission cabin 209, when the amount of the hydraulic oil in the inside of the first spring 212 reaches a rated value, the first limiting plate 207 is driven to move away from the position of the first hollow plate 211, so as to form a limiting assembly at the top of the auxiliary supporting rod 206. After the above steps are completed, the transmission motor 201 inputs a stable working current, and the transmission of the transmission rod 202 controls the second placing plate 205, the annealing plate 204 and the first placing plate 203 to rotate 180°, so as to adjust the annealing position of the silicon carbide wafer in real time.

[0030] The specific working process of the present application is as follows: Step one, the electric control stretching device 102 inputs current to control the movement of the moving plate 1021 and the annealing plate 204 to move to the outside of the annealing device 1. During the movement, the electric control hydraulic supply device 301 inputs a stable working current to drive the hydraulic oil in the inside thereof to be transmitted to the second transmission groove 2051 through the second delivery pipe 305, the inside of the first hollow ring plate 303 and the first delivery hole 2021 in the inner wall of the transmission rod 202, the hydraulic oil in the inside of the second transmission groove 2051 is transmitted to the inside of the second transmission cabin 210, and then to the inside of the second hollow plate 213 through the inside of the second transmission cabin 210. When the amount of hydraulic oil in the inside of the second hollow plate 213 reaches the rated value, the second limiting plate 208 will be driven to move away from the second hollow plate 213 to form a limiting assembly at the bottom of the auxiliary support rod 206, and the unannealed silicon carbide wafer is placed on the limiting assembly by artificial; Step two, the electric control stretching device 102 inputs reverse current to control the silicon carbide wafer in the inside of the annealing plate 204 to be input to the inside of the annealing device 1 for annealing operation; Step three, after the silicon carbide wafer is annealed for a stable time, the electric control hydraulic supply device 301 inputs a stable working current to drive the hydraulic oil in the inside thereof to be transmitted to the first transmission groove 2031 through the first delivery pipe 302, the inside of the second hollow ring plate 304 and the second delivery hole 2061 in the inner wall of the auxiliary support rod 206, the hydraulic oil in the inside of the first transmission groove 2031 is transmitted to the inside of the first transmission cabin 209, and then to the inside of the first spring 212 through the inside of the first transmission cabin 209. When the amount of hydraulic oil in the inside of the first spring 212 reaches the rated value, the first limiting plate 207 will be driven to move away from the first hollow plate 211 to form a limiting assembly at the top of the auxiliary support rod 206; Step four, after the above steps are completed, the transmission motor 201 inputs a stable working current, and the transmission of the transmission rod 202 controls the second placing plate 205, the annealing plate 204 and the first placing plate 203 to rotate 180°, so as to adjust the annealing position of the silicon carbide wafer in real time. Step five, after the annealing position adjustment of the silicon carbide wafer is completed, the electric control hydraulic providing device 301 inputs reverse current to generate adsorption force, and the hydraulic oil in the second hollow plate 213 is returned to the inside of the electric control hydraulic providing device 301 through the hydraulic oil flow path mentioned in step one, the second spring 214 in the deformed state generates corresponding spring force to control the second limiting plate 208 to return to the original position, so as to perform annealing operation on the contact surface of the silicon carbide wafer and the limiting assembly, and further ensure the annealing uniformity of the whole silicon carbide wafer; Step six, after the annealing of the silicon carbide wafer is completed, the electric control hydraulic providing device 301 inputs stable working current, and step one is repeated to control the second limiting plate 208 to move to the outer surface of the silicon carbide wafer, the transmission motor 201 inputs current again to control the second placing plate 205 to rotate reversely by 180° again to return to the original position, and at the same time, the electric control hydraulic providing device 301 inputs stable working current to generate adsorption force, and the hydraulic oil in the first hollow plate 211 is returned to the inside of the electric control hydraulic providing device 301 through the hydraulic oil flow path mentioned in step three, the second spring 214 in the deformed state generates corresponding spring force to further control the first limiting plate 207 to return to the original position; Step seven, after step six is completed, the electric control stretching device 102 inputs stable working current to drive the moving plate 1021 and the annealing plate 204 to move to the outside of the annealing device 1, in the moving process of the annealing plate 204, the electric control hydraulic providing device 301 inputs stable current to continuously input hydraulic oil into the inside of the second hollow plate 213 through the second conveying pipe 305, the hydraulic oil in the inside of the second hollow plate 213 is input into the inside of the second limiting plate 208 and the extrusion plate 215, when the pressure generated by the hydraulic oil in the inside of the second limiting plate 208 and the extrusion plate 215 is greater than the spring force generated by the third spring 216, the extrusion plate 215 is driven to move upward, and the group of extrusion plates 215 drives one side of the annealed silicon carbide wafer to be inclined, so as to facilitate the staff to quickly take the annealed silicon carbide wafer.

[0031] Finally, it should be pointed out that: first, in the description of the present application, it should be pointed out that, unless otherwise specified and limited, the terms "installation", "connection", "connection" should be understood broadly, which can be mechanical connection or electrical connection, or the communication between two elements, or direct connection, "up", "down", "left", "right" and the like are only used to represent the relative positional relationship, when the absolute position of the described object changes, the relative positional relationship may change; Secondly: the present application discloses the structure involved in the embodiment of the present application, and other structures can refer to the usual design, and the same embodiment and different embodiments of the present application can be combined with each other under the condition of no conflict; Finally: the above only for the preferred embodiments of the present application, and not for limiting the present application, any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application, should be included in the scope of protection of the present application.

Claims

1. An annealing apparatus for manufacturing silicon carbide wafers, comprising an annealing apparatus (1), characterized by: The side of the annealing device (1) is provided with a sealing cover (101), the side of the sealing cover (101) away from the annealing device (1) is provided with an electric control stretching device (102), and the side of the electric control stretching device (102) is sequentially provided with an automatic adjusting assembly (2) and an auxiliary adjusting assembly (3). The automatic adjusting assembly (2) and the auxiliary adjusting assembly (3) input electric current, so as to adjust the annealing position of the silicon carbide wafer and assist the worker to take the silicon carbide wafer after annealing.

2. The annealing apparatus for manufacturing silicon carbide wafers according to claim 1, wherein: The automatic adjusting assembly (2) comprises a transmission motor (201), wherein the transmission motor (201) is installed on the side of the electric control stretching device (102) away from the sealing cover (101), the electric control stretching device (102) is provided with a moving plate (1021) on the side close to the sealing cover (101), the output end of the transmission motor (201) is provided with a transmission rod (202), one end of the transmission rod (202) penetrates into the inside of the moving plate (1021), and the end of the transmission rod (202) is provided with a second placing plate (205). The auxiliary adjusting assembly (3) comprises an electric control hydraulic pressure providing device (301).

3. The annealing apparatus for manufacturing silicon carbide wafers according to claim 2, wherein: The electric control hydraulic pressure providing device (301) is installed on the side of the electric control stretching device (102), and the installation position of the electric control hydraulic pressure providing device (301) on the side of the electric control stretching device (102) is close to the transmission motor (201), the electric control hydraulic pressure providing device (301) comprises two groups of output ports, and the two groups of output ports are sequentially provided with a second conveying pipe (305) and a first conveying pipe (302).

4. The annealing apparatus for manufacturing silicon carbide wafers according to claim 3, wherein: The transmission rod (202) is movably sleeved with a first hollow ring plate (303) on the outer side close to the second placing plate (205), one end of the second conveying pipe (305) penetrates into the inner wall of the moving plate (1021), and the end of the second conveying pipe (305) is installed in the inside of the first hollow ring plate (303), the inside of the transmission rod (202) is provided with a first conveying hole (2021), and the inside of the second placing plate (205) is provided with a second transmission groove (2051).

5. The annealing apparatus for manufacturing silicon carbide wafers according to claim 4, wherein: The electric control hydraulic pressure providing device (301) drives the hydraulic oil in the inside to be input into the inside of the first hollow ring plate (303) through the second conveying pipe (305), and then is transmitted into the second transmission groove (2051) in the inside of the second placing plate (205) through the first conveying hole (2021) in the inside of the transmission rod (202). One end of the first conveying pipe (302) away from the electric control hydraulic pressure providing device (301) is provided with a second hollow ring plate (304), and the inner wall of the second hollow ring plate (304) is movably sleeved with an auxiliary supporting rod (206).

6. The annealing apparatus for manufacturing silicon carbide wafers according to claim 5, wherein: The first placement plate (203) is provided with a first transmission groove (2031) in the inside thereof, and the electrically-controlled hydraulic pressure providing device (301) drives the hydraulic oil in the inside thereof to be transmitted to the inside of the second hollow ring plate (304) through the first transmission pipe (302), and then to the first transmission groove (2031) through the second transmission hole (2061).

7. The annealing apparatus for manufacturing silicon carbide wafers according to claim 6, wherein: The geometric center points of the first placement plate (203) and the second placement plate (205) are on the same straight line, and three groups of annealing plates (204) are fixedly and equidistantly installed on the length direction of the side surfaces of the first placement plate (203) and the second placement plate (205) in sequence, the inside of the annealing plate (204) is provided with a first transmission cabin (209) and a second transmission cabin (210) in sequence, and the first transmission cabin (209) and the second transmission cabin (210) are not communicated with each other, the first transmission cabin (209) and the first transmission groove (2031) are in a mutual communication state, and the second transmission cabin (210) and the second transmission groove (2051) are in a mutual communication state. The inside of each group of the annealing plate (204) is provided with an auxiliary support rod (206).

8. The annealing apparatus for manufacturing silicon carbide wafers according to claim 7, wherein: The inside of the top of the auxiliary support rod (206) is provided with a plurality of groups of first hollow plates (211) in sequence and equidistantly, the inside of the bottom of the auxiliary support rod (206) is provided with a plurality of groups of second hollow plates (213) in sequence and equidistantly, the inside of the first hollow plate (211) is in a mutual communication state with the first transmission cabin (209), the inside of the first hollow plate (211) is provided with a first limiting plate (207) movably sleeved on the inner wall thereof away from the position of the annealing plate (204), the side surface of the first limiting plate (207) close to the position of the auxiliary support rod (206) is vertically provided with a first spring (212), one end of the first spring (212) away from the first limiting plate (207) is vertically installed on the inner side surface of the first hollow plate (211). The inside of each group of the second hollow plate (213) is movably sleeved with a second limiting plate (208) on the inner wall thereof away from the position of the auxiliary support rod (206).

9. The annealing apparatus for manufacturing silicon carbide wafers according to claim 8, wherein: The inside of the top of one group of the second limiting plate (208) is movably sleeved with an extrusion plate (215), the inside of the bottom of the extrusion plate (215) is vertically provided with a third spring (216), the bottom of the third spring (216) is vertically installed on the inner wall of the second limiting plate (208), the side surface of each group of the second limiting plate (208) close to the position of the auxiliary support rod (206) is vertically provided with a second spring (214), one end of the second spring (214) away from the second limiting plate (208) is vertically installed on the inner side surface of the second hollow plate (213), and the inside of the second hollow plate (213) is in a mutual communication state with the second transmission cabin (210).

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