Neuromorphic gas sensor based on ionic gel and memristor and preparation method

Abstract

The invention relates to the technical field of microelectronic devices and intelligent sensing, and discloses a neuromorphic gas sensor based on ionic gel and a memristor and a preparation method. The sensor comprises a substrate, a Mott memristor and an ionic gel capacitive gas sensing unit, wherein the Mott memristor and the ionic gel capacitive gas sensing unit are integrated on the substrate, and the Mott memristor and the ionic gel capacitive gas sensing unit are electrically interconnected through on-chip heterogeneous integration to form an oscillation circuit. The adsorption response characteristic of the ionic gel interface double-electrode layer capacitor to gas molecules is utilized to modulate the charging and discharging period of the Mott memristor, so that the gas concentration information is converted into the frequency of the output pulse signal. The gas sensing and encoding integrated function is achieved, the gas sensing and encoding integrated device has the advantages of working at the room temperature, being compact in structure, low in power consumption and compatible with the CMOS technology, and a device basis is provided for constructing an efficient gas sensing front end suitable for a brain-like intelligent sensing system.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of microelectronic devices and intelligent sensing technology, in particular to a neuromorphic gas sensor based on ionic gel and memristor and a preparation method thereof. BACKGROUND

[0002] Artificial intelligence technology is evolving towards a brain-inspired brain-like computing architecture. The brain-like perception system with spiking neural network (SNN) as the core has great potential in the field of intelligent perception due to its high energy efficiency and event-driven characteristics. However, one of the development bottlenecks of the current brain-like system is the information acquisition end. Traditional gas sensors generally adopt the "perception-analog-digital conversion-processing" mode based on the von Neumann architecture. The continuous analog signal output cannot be directly compatible with the SNN processing pulse signal, and usually requires additional complex circuits for signal conversion, which introduces problems such as delay, power consumption and system size increase.

[0003] To solve the above problems, the existing technology mainly tries two paths: The first is to connect the discrete gas sensor (such as a semiconductor metal oxide gas sensor) and the discrete memristor through external resistors, capacitors and other elements to realize the conversion of analog signals to pulse signals. However, this method cannot realize the physical integration of the device, the system size is large, and the metal oxide sensor needs a high-temperature working environment of 300-500℃, which not only has high power consumption, but also introduces difficult-to-solve problems of thermal crosstalk and thermal stress, which seriously hinders the miniaturization and integration of the device.

[0004] The second is to explore the gas-sensitive properties of the resistive switching layer material (such as some metal oxides) of the memristor itself, trying to realize the dual function of a single device. However, this method often cannot balance excellent memristive properties and high sensitivity gas-sensitive properties, and also faces the problem of high-temperature work, making it difficult to realize stable pulse signal output.

[0005] Therefore, there is an urgent need for a new gas sensor architecture that can work at room temperature, be integrated on a chip, and integrate gas perception and pulse coding functions into one. SUMMARY

[0006] To solve the above problems, the present application provides a neuromorphic gas sensor and a preparation method, which are monolithically integrated, compact in structure, work at room temperature, and can realize the integration of "perception-coding", to solve the problems of poor compatibility, large size, high power consumption and difficulty in integration of traditional gas sensors and brain-like computing systems, and provide an efficient gas sensing front end for brain-like intelligent perception systems.

[0007] The present application adopts the following technical solutions: In a first aspect, the present application provides a neuromorphic gas sensor based on ionogel and memristor, comprising: an ionogel capacitive gas sensing unit and a Mott memristor; The ionogel capacitive gas sensing unit and the Mott memristor are heterogeneously integrated on the substrate through a micro-nano processing technology, and are electrically connected through metal interconnection lines to form an oscillation loop. The ionogel electric double layer capacitance of the ionogel capacitive gas sensing unit changes due to gas adsorption, modulates the charging and discharging period of the Mott memristor, so that the frequency of the output pulse signal is associated with the gas concentration, and the gas concentration information is converted into the frequency of the output pulse signal.

[0008] Preferably, the material of the substrate is Si, Si / SiO2, quartz or Al2O3.

[0009] Preferably, the Mott memristor comprises an electrode and a resistive switching layer, and the electrode is electrically connected with the metal interconnection line.

[0010] Preferably, the resistive switching layer is an electronic strong correlation material with electric field or thermal excitation induced metal-insulator phase transition characteristics, and the thickness of the resistive switching layer is 100-500 nanometers.

[0011] Preferably, the electronic strong correlation material is VO2 or NbO2.

[0012] Preferably, the ionogel capacitive gas sensing unit comprises interdigital electrodes and a gas sensitive layer, and the interdigital electrodes are electrically connected with the metal interconnection line.

[0013] Preferably, the gas sensitive layer is an ionogel thin film, and the thickness of the gas sensitive layer is 500-2000 nanometers.

[0014] Preferably, the ionogel thin film comprises an ionic liquid; the ionic liquid is an imidazole, pyridine, quaternary ammonium, quaternary phosphonium, pyrrolidine or piperidine ionic liquid.

[0015] In a second aspect, the present application further provides a preparation method of a neuromorphic gas sensor based on ionogel and memristor, comprising the following steps: Preparation of the interdigital electrodes, metal interconnection lines and Mott memristor of the ionogel capacitive gas sensing unit on the substrate, and the interdigital electrodes and the electrode of the Mott memristor are respectively electrically connected with the metal interconnection lines to form an oscillation loop; Deposition of a passivation layer on the region of the interdigital electrodes of the ionogel capacitive gas sensing unit and the region of the metal interconnection lines other than the pad region; Preparation of a gas sensitive layer in the interdigital electrode region.

[0016] Preferably, the preparation of the interdigital electrodes, metal interconnection lines and Mott memristor of the ionogel capacitive gas sensing unit on the substrate comprises: A first mask is prepared by spin-coating photoresist and combining with photolithography process; the first mask masks the area outside the interdigital electrode, the metal interconnection line and the two-terminal electrode of the Mott memristor; Adhesion layer material and electrode metal material are sequentially deposited by electron beam evaporation, and the first mask and the adhesion layer material and electrode metal material covered on the first mask are removed by a lift-off process to form the interdigital electrode, the metal interconnection line and the two-terminal electrode; VO2 is deposited on the two-terminal electrode area by magnetron sputtering, and annealing treatment is performed to form a crystallized resistive switching layer.

[0017] Preferably, the interdigital electrode, the metal interconnection line and the Mott memristor of the ionogel capacitive gas sensing unit on the substrate comprise: A second mask is prepared by spin-coating photoresist and combining with photolithography process; the second mask masks the area outside the bottom electrode of the Mott memristor; Adhesion layer material and electrode metal material are sequentially deposited by electron beam evaporation, and the second mask and the adhesion layer material and electrode metal material covered on the second mask are removed by a lift-off process to form the bottom electrode; NbO2 is deposited on the bottom electrode area by magnetron sputtering, and annealing treatment is performed to form a crystallized resistive switching layer; A third mask is prepared by spin-coating photoresist and combining with photolithography process; the third mask masks the area outside the top electrode of the Mott memristor; Adhesion layer material and electrode metal material are sequentially deposited by electron beam evaporation, and the third mask and the adhesion layer material and electrode metal material covered on the third mask are removed by a lift-off process to form the top electrode; A fourth mask is prepared by spin-coating photoresist and combining with photolithography process; the fourth mask masks the area outside the interdigital electrode and the metal interconnection line; Adhesion layer material and electrode metal material are sequentially deposited by electron beam evaporation, and the fourth mask and the adhesion layer material and electrode metal material covered on the fourth mask are removed by a lift-off process to form the interdigital electrode and the metal interconnection line.

[0018] Preferably, a passivation layer is deposited on the area outside the interdigital electrode area and the pad area of the metal interconnection line of the ionogel capacitive gas sensing unit, comprising: Depositing a passivation material; Using photolithography and reactive ion etching process, the passivation material in the interdigital electrode area and the pad area is selectively removed to form a passivation layer.

[0019] Preferably, a gas sensitive layer is prepared in the interdigital electrode area, comprising: Spin-coating a mixed solution of ionic liquid, polymer monomer, crosslinking agent and photoinitiator to form a liquid film; Covering the isolation film on the liquid film; UV exposure is performed using a mask that masks the area outside the interdigital electrode area, so that the mixed solution in the interdigital electrode area undergoes a photo-induced polymerization reaction; After exposure, the isolation film is removed and the mixed solution in the unexposed area is removed, forming a patterned solid ionic gel film as a gas-sensitive layer.

[0020] In a third aspect, the application also provides an application of the neuromorphic gas sensor based on ionic gel and memristor, for detecting toxic and harmful gases; the toxic and harmful gases include: ammonia, nitrogen dioxide.

[0021] The application provides a neuromorphic gas sensor based on ionic gel and memristor. The ionic gel capacitor type gas sensing unit utilizes the sensitivity of the ionic gel interface double-layer capacitor to gas adsorption, as a modulation capacitor in an oscillation circuit. When gas molecules are adsorbed by the ionic gel, the charge distribution and thickness of the interface double-layer change, causing a change in the capacitance value. The capacitance change directly modulates the charge and discharge period of the oscillation circuit on the Mott memristor: the capacitance value increases, the charge and discharge period becomes longer, and the pulse frequency decreases; the capacitance value decreases, the charge and discharge period becomes shorter, and the pulse frequency increases. Therefore, the frequency of the output pulse signal of the Mott memristor is mapped with the concentration of the external gas, realizing in-situ frequency coding of the gas concentration information.

[0022] The application deeply integrates the gas sensitive unit (ionic gel capacitor type gas sensing unit) and the pulse coding unit (Mott memristor), and completes the whole process from gas concentration signal sensing to pulse frequency coding in an integrated device, abandoning the traditional complex analog-to-digital conversion circuit. This "sensing and calculation integrated" architecture can be used as a native front end, directly and seamlessly connected to a brain-like computing system such as a pulse neural network, and has broad application prospects in the fields of Internet of Things, robot environmental perception, portable medical diagnosis, etc.

[0023] By on-chip heterogeneous integration of the ionic gel capacitor type gas sensing unit and the Mott memristor on a single substrate, a compact single device is formed. This integration method significantly reduces the volume, avoids parasitic effects and reliability problems caused by discrete component connections, and lays a foundation for building a high-density neuromorphic sensing array.

[0024] The ion gel photolithography patterning process, the magnetron sputtering and annealing process of the Mott memristor resistive switching layer, and the preparation process of the metal electrode used in the application are all compatible with mainstream semiconductor CMOS manufacturing processes. This ensures that the sensor has the potential for mass production and low-cost manufacturing, which is conducive to promoting its industrialization and practical application. BRIEF DESCRIPTION OF DRAWINGS

[0025] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings: Figure 1 A structural schematic diagram of an ionogel and memristor-based neuromorphic gas sensor according to Embodiment 1 of the present application is shown; Figure 2 A circuit schematic diagram of an ionogel and memristor-based neuromorphic gas sensor according to Embodiment 1 of the present application is shown; Figure 3 A gas-sensitive response curve diagram of an ionogel and memristor-based neuromorphic gas sensor according to Embodiment 1 of the present application is shown, in which (a) indicates clean dry air, (b) indicates 20 ppm of ammonia gas, (c) indicates 40 ppm of ammonia gas, and (d) indicates 60 ppm of ammonia gas. DETAILED DESCRIPTION

[0026] To make the objectives, technical solutions, and advantages of the present application clearer, the technical solutions of the present application will be described below in conjunction with specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort belong to the scope of protection of the present application.

[0027] In the following, an ionogel and memristor-based neuromorphic gas sensor proposed by the present application will be described in detail through specific embodiments.

[0028] Embodiment 1 I. Prepare the interdigital electrode, metal interconnection line, and Mott memristor of the ionogel capacitive gas sensing unit on the substrate, and the electrodes of the interdigital electrode and Mott memristor are respectively electrically connected with the metal interconnection line to form an oscillation loop.

[0029] (1) Select a double-side polished high-resistance Si wafer with 300 nm of thermally grown SiO2 on the surface as the substrate. Clean the substrate in acetone, ethanol, and deionized water for 15 minutes each, and dry it with nitrogen for standby.

[0030] (2) Spin-coat positive photoresist (AZ5214) on the substrate, with the parameter setting of 3000 rpm and 50 seconds, to form a photoresist layer with a thickness of about 1.5 microns. Perform ultraviolet exposure using a mask plate (the mask plate masks the areas outside the interdigital electrode, metal interconnection line, and two electrodes) that defines the interdigital electrode, metal interconnection line, and two electrodes, with an exposure energy of 120 mJ / cm 2After exposure, the exposed areas of photoresist are removed by developing in AZ400K developer (diluted with deionized water at a ratio of 1:4) for 40 seconds.

[0031] (3) A 10-nanometer titanium layer and a 100-nanometer gold layer are sequentially deposited by using an electron beam evaporation device, and the photoresist and the titanium and gold layers covering the photoresist are removed by immersion in acetone for 30 minutes to form interdigital electrodes, metal interconnection lines, and two end electrodes.

[0032] (4) A 100-nanometer VO2 layer is deposited on the two end electrode regions at room temperature by using a magnetron sputtering system with high-purity VO2 (purity 99.9%) as a target material under the conditions of an argon / oxygen flow ratio of 49:1, a working gas pressure of 0.5 Pa, and a sputtering power of 100 W.

[0033] (5) The VO2 is crystallized to form a resistive switching layer having a metal-insulator phase transition characteristic by placing the sample in a rapid annealing furnace, rapidly heating it to 400°C at a rate of 20°C / s in a nitrogen environment (flow rate 2 L / min) and maintaining the temperature for 60 seconds, and then naturally cooling it.

[0034] II. A passivation layer is deposited on regions of the ionogel capacitive gas sensing unit other than the interdigital electrode regions and the pad regions of the metal interconnection lines.

[0035] (1) A 100-nanometer SiO2 layer is deposited by using a plasma-enhanced chemical vapor deposition process.

[0036] (2) The SiO2 layers in the interdigital electrode regions and the pad regions are selectively removed by using a photolithography and reactive ion etching process to form the passivation layer.

[0037] III. A gas sensitive layer is prepared in the interdigital electrode regions.

[0038] (1) An ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide salt ([EMIM][Tf2N]), a polymer monomer hydroxyethyl acrylate (HEA), and a crosslinking agent polyethylene glycol diacrylate (PEGDA, Mn=250) are mixed at a mass ratio of 80:18:2, and 1wt% of a photoinitiator Irgacure 819 is added to the total mass of the polymer monomers, and the mixture is magnetically stirred in the dark for 2 hours until it is completely mixed and uniform.

[0039] (2) The precursor mixed solution is spin-coated with parameters set to 2000 rpm for 30 seconds to form a uniform liquid film with a thickness of about 2 microns.

[0040] (3) A high-transmittance polyethylene terephthalate (PET) film is placed on the liquid film to isolate oxygen.

[0041] (4) UV exposure is performed using a mask covering the area outside the interdigital electrode area, with exposure parameters of wavelength 365 nm, intensity 10 mW / cm2, and time 30 seconds, to cause the mixed solution in the interdigital electrode area to undergo a photo-induced polymerization reaction.

[0042] (5) After exposure, the PET film is removed, and the device is immersed in anhydrous ethanol for 10 seconds to remove the un-polymerized mixed solution in the unexposed area, and finally a patterned solid ionic gel thin film is formed in the interdigital electrode area as a gas-sensitive layer.

[0043] Figure 1 A structural schematic diagram of the ionogel and memristor-based neuromorphic gas sensor of Example 1 is shown. In Figure 1 , 1 represents a Mott memristor, 2 represents an ionogel capacitive gas sensing unit, 3 represents a substrate, 4 represents a passivation layer, and 5 represents a metal interconnection line.

[0044] When the gas sensor prepared in Example 1 is used for gas detection, the working process is as follows: the gas sensor is installed in a gas-sensitive test chamber, and a load resistor is connected in series between the gas sensor and the outside through a probe station to serve as a protection function. A semiconductor parameter analyzer (such as Keysight B1500A) is used to apply a constant direct current bias voltage (V in ) of 1 volt to the oscillation circuit of the gas sensor. At the same time, an oscilloscope (such as Tektronix MDO3024) is used to monitor and record the voltage pulse signal (V out ) of the metal interconnection line in real time. Figure 2 A circuit schematic diagram of the ionogel and memristor-based neuromorphic gas sensor of Example 1 is shown.

[0045] When the detection starts, clean dry air is first introduced into the test chamber, and the baseline pulse frequency output by the gas sensor is measured and recorded; then, a target gas (such as ammonia) with a specific concentration (for example, 20-60 ppm) is introduced into the test chamber, and the bias voltage is kept constant during this process, and the change in the output pulse frequency is monitored in real time; after the detection ends, the target gas is cut off, and clean air is introduced for purging until the pulse frequency output by the gas sensor returns to the baseline value. Figure 3 A gas-sensitive response curve of the ionogel and memristor-based neuromorphic gas sensor of Example 1 is shown, i.e., the voltage pulse signal measured under different concentrations of target gas.

[0046] Example 2: I. An interdigital electrode, a metal interconnection line, and a Mott memristor of an ionogel capacitive gas sensing unit are prepared on a substrate, and the electrodes of the interdigital electrode and the Mott memristor are respectively electrically connected to the metal interconnection line to form an oscillation circuit.

[0047] (1) Select the double polished high resistance Si wafer with 300 nm thermally grown SiO2 on both sides as the substrate. The substrate is sequentially cleaned in acetone, ethanol and deionized water for 15 minutes each, and dried with nitrogen for standby.

[0048] (2) Spin AZ5214 positive photoresist on the substrate, with parameters set to 3000 rpm for 50 seconds, to form a photoresist layer with a thickness of about 1.5 microns. Use a mask that defines the bottom electrode (which masks the area outside the bottom electrode) for UV exposure, with an exposure energy of 120 mJ / cm 2 . After exposure, develop the photoresist for 40 seconds using AZ400K developer (diluted with deionized water at a ratio of 1:4), to remove the photoresist in the exposed area.

[0049] (3) Use an electron beam evaporation device to deposit 10 nm of titanium and 100 nm of gold in sequence, and then immerse in acetone for 30 minutes for stripping, to remove the photoresist and the titanium and gold covering the photoresist, forming the bottom electrode.

[0050] (4) Use a magnetron sputtering system with high-purity niobium (purity 99.95%) as the target material, deposit 80 nm of NbO2 on the bottom electrode area at 300°C, with an argon to oxygen flow ratio of 2:1, a working pressure of 0.6 Pa, and a sputtering power of 120 W. By precisely controlling the oxygen partial pressure, a stoichiometric ratio close to 1:2 of the NbO2 phase is obtained.

[0051] (5) Put it into a rapid annealing furnace, heat it to 600°C at a rate of 20°C / s in a nitrogen environment (flow rate 2 L / min) and keep it for 60 seconds, and then cool it naturally, to make the NbO2 crystallize into a resistive layer with metal-insulator phase transition characteristics.

[0052] (6) Spin AZ5214 positive photoresist, with parameters set to 3000 rpm for 50 seconds, to form a photoresist layer with a thickness of about 1.5 microns. Use a mask that defines the top electrode (which masks the area outside the top electrode) for UV exposure, with an exposure energy of 120 mJ / cm 2 . After exposure, develop the photoresist for 40 seconds using AZ400K developer (diluted with deionized water at a ratio of 1:4), to remove the photoresist in the exposed area.

[0053] (7) Use an electron beam evaporation device to deposit 10 nm of titanium and 100 nm of gold in sequence, and then immerse in acetone for 30 minutes for stripping, to remove the photoresist and the titanium and gold covering the photoresist, forming the top electrode.

[0054] (8) Spin-coat positive photoresist (AZ5214) with parameters of 3000 rpm for 50 seconds to form a photoresist layer with a thickness of about 1.5 microns. Perform UV exposure using a mask that defines the interdigital electrode and metal interconnection lines (the mask masks the areas outside the interdigital electrode and metal interconnection lines), and the exposure energy is 120 mJ / cm 2 . After exposure, develop the photoresist using AZ400K developer (diluted with deionized water at a ratio of 1:4) for 40 seconds to remove the photoresist in the exposed areas.

[0055] (9) Use an electron beam evaporation device to sequentially deposit 10 nanometers of titanium and 100 nanometers of gold, immerse in acetone for 30 minutes for stripping, remove the photoresist and the titanium and gold covering the photoresist, and form the interdigital electrode and metal interconnection lines.

[0056] II. Deposit a passivation layer on the areas outside the pad area and the interdigital electrode area of the ionic gel capacitive gas sensing unit.

[0057] (1) Use an atomic layer deposition process to deposit Al2O3 with a thickness of 50 nanometers at a temperature below 100°C.

[0058] (2) Use a photolithography and buffered oxide etchant wet etching process to selectively remove Al2O3 in the interdigital electrode area and the pad area to form the passivation layer.

[0059] III. Prepare a gas sensitive layer in the interdigital electrode area.

[0060] (1) Mix the ionic liquid 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM][BF4]), the polymer monomer hydroxyethyl acrylate (HEA), and the crosslinking agent polyethylene glycol diacrylate (PEGDA, Mn=250) in a mass ratio of 75:20:5, then add 1.5wt% of the photoinitiator Irgacure 819 based on the total mass of the polymer monomer, and magnetically stir under light shielding conditions for 2 hours until completely mixed and uniform.

[0061] (2) Spin-coat the precursor mixed solution with parameters of 2000 rpm for 30 seconds to form a uniform liquid film with a thickness of about 1.5 microns.

[0062] (3) Cover the liquid film with a high-transparency polyethylene terephthalate (PET) film to isolate oxygen.

[0063] (4) Perform UV exposure using a mask that masks the areas outside the interdigital electrode area, and the exposure parameters are a wavelength of 365 nanometers, an intensity of 10 mW / cm², and a time of 30 seconds, so that the mixed solution in the interdigital electrode area undergoes a photoinitiated polymerization reaction.

[0064] (5) After exposure, the PET film is removed, and the unexposed area is rinsed in anhydrous ethanol for 10 seconds to remove the unpolymerized mixed solution, and finally a patterned solid ionic gel film is formed in the interdigital electrode area as a gas sensitive layer.

[0065] When the gas sensor prepared in Example 2 is used for gas detection, the working process is as follows: the gas sensor is installed in a gas sensitive test chamber, and a load resistor is connected in series with the outside through a probe table to play a protective role. A constant direct current bias voltage of 1 volt is applied to the oscillation circuit of the gas sensor using a semiconductor parameter analyzer. At the same time, the voltage pulse signal of the metal interconnection line is monitored and recorded in real time using an oscilloscope.

[0066] When starting detection, first, clean dry air is introduced into the test chamber, and the baseline pulse frequency output by the gas sensor is measured and recorded; then, a specific concentration (for example, 20-100 ppm) of the target gas (such as nitrogen dioxide) is introduced into the test chamber, the bias voltage is kept unchanged during this process, and the change of the output pulse frequency is monitored in real time; after detection, the target gas is cut off, and clean air is introduced for purging until the pulse frequency output by the gas sensor returns to the baseline value.

[0067] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that the technical solutions recorded in the foregoing embodiments can still be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. An ionogel and memristor based neuromorphic gas sensor, characterized in that, The application relates to a gas sensing device. The ion gel capacitor type gas sensing unit and the Mott memory are integrated on a substrate and electrically connected by metal interconnection lines to form an oscillation loop. The ion gel capacitor type gas sensing unit responds to gas adsorption changes through ion gel electric double layer capacitance and modulates the charge and discharge cycle of the Mott memory to convert gas concentration information into the frequency of output pulse signals. The substrate is made of Si, Si / SiO2, quartz or Al2O3.

2. The ionogel and memristor-based neuromorphic gas sensor of claim 1, wherein, The Mott memory comprises electrodes and a resistance change layer, and the electrodes are electrically connected with the metal interconnection lines.

3. The ionogel and memristor-based neuromorphic gas sensor of claim 1, wherein, The resistance change layer is an electronic strong correlation material with electric field or thermal excitation induced metal-insulator phase transition characteristics, and the thickness of the resistance change layer is 100-500 nanometers.

4. The ionogel and memristor-based neuromorphic gas sensor of claim 3, wherein, The electronic strong correlation material is VO2 or NbO2.

5. The ionogel and memristor-based neuromorphic gas sensor according to claim 4, wherein The ion gel capacitor type gas sensing unit comprises interdigital electrodes and a gas sensitive layer, and the interdigital electrodes are electrically connected with the metal interconnection lines.

6. The ionogel and memristor-based neuromorphic gas sensor of claim 1, wherein, The gas sensitive layer is an ion gel film, and the thickness of the gas sensitive layer is 500-2000 nanometers.

7. The ionogel and memristor-based neuromorphic gas sensor according to claim 6, wherein The ion gel film comprises an ionic liquid.

8. The ionogel and memristor-based neuromorphic gas sensor according to claim 7, characterized in that, The ionic liquid is an imidazole, pyridine, quaternary ammonium, quaternary phosphonium, pyrrolidine or piperidine ionic liquid. The application also discloses a preparation method of the gas sensing device.

9. A method for the preparation of the ionogel and memristor-based neuromorphic gas sensor according to any one of claims 1 to 8, characterized by, The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device.

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The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a preparation method of the gas sensing device. The application discloses a Depositing NbO2 in the bottom electrode region by magnetron sputtering, and performing annealing treatment to form a crystallized resistive switching layer; Preparation of a third mask by spin-coating photoresist and combining with a photolithography process; the third mask masks the area outside the top electrode of the Mott memristor; Sequential deposition of the adhesion layer material and the electrode metal material by electron beam evaporation, removal of the third mask and the adhesion layer material and the electrode metal material covered on the third mask by a lift-off process, to form the top electrode; Preparation of a fourth mask by spin-coating photoresist and combining with a photolithography process; the fourth mask masks the area outside the interdigital electrode and the metal interconnection line; Sequential deposition of the adhesion layer material and the electrode metal material by electron beam evaporation, removal of the fourth mask and the adhesion layer material and the electrode metal material covered on the fourth mask by a lift-off process, to form the interdigital electrode and the metal interconnection line.

12. The method for preparing an ionogel and memristor-based neuromorphic gas sensor according to claim 9, characterized in that, The deposition of a passivation layer on the area outside the interdigital electrode region and the pad region of the metal interconnection line of the ionic gel capacitive gas sensing unit, comprises: Deposition of a passivation material; Selective removal of the passivation material in the interdigital electrode region and the pad region by photolithography and reactive ion etching process, to form the passivation layer.

13. The method for preparing an ionogel and memristor-based neuromorphic gas sensor according to claim 9, characterized in that, The preparation of a gas-sensitive layer in the interdigital electrode region, comprises: Spin-coating a mixed solution of ionic liquid, polymer monomer, crosslinking agent, and photoinitiator to form a liquid film; Covering a barrier film on the liquid film; Ultraviolet exposure using a mask that masks the area outside the interdigital electrode region, to cause the mixed solution in the interdigital electrode region to undergo photoinitiated polymerization; After exposure, remove the barrier film and the mixed solution in the unexposed area to form a patterned solid ionic gel film as the gas-sensitive layer.

14. Use of the ionogel and memristor-based neuromorphic gas sensor according to any one of claims 1 to 8, characterized in that, The ionogel and memristor-based neuromorphic gas sensor is used for detecting toxic and harmful gases; The toxic and harmful gases include: ammonia, nitrogen dioxide.

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