Dual-channel millimeter wave reflective reconfigurable AIP unit based on functional structure integrated design

Abstract

The invention provides a dual-channel millimeter wave reflective reconfigurable AIP unit based on functional structure integrated design. The dual-channel millimeter wave reflective reconfigurable AIP unit comprises a slot coupling microstrip antenna and a dual-channel reflective phase shift bare chip, the slot coupling microstrip antenna takes an HTCC ceramic substrate as a medium and takes a ceramic cavity as a resonant cavity, and a broadband and dual-channel coupling feed structure is formed through a slot; the dual-channel reflection type phase shift bare chip is bonded to a feed layer of the slot coupling microstrip antenna through a conductive adhesive and is interconnected with a feed sheet at a shortest distance, and a control end of the dual-channel reflection type phase shift bare chip is interconnected with a metal QFN bonding pad of the AIP unit. According to the invention, the working bandwidth of 15% is realized within the phase precision of 90 degrees + / -15 degrees, the maximum working bandwidth is not more than 2.1 dB, the leading level of the field is reached, and most millimeter wave communication requirements can be met in engineering.

Description

TECHNICAL FIELD

[0001] The application relates to the field of packaging antennas, in particular to a dual-channel millimeter wave reflective reconfigurable AIP (Antenna in Package) unit based on functional structure integration design. BACKGROUND

[0002] The reconfigurable reflective array system architecture is simple, and is a low-cost mainstream solution for high-gain and wide-angle beam rapid scanning antennas today, and is widely used in the communication fields of 5G, 6G and the like. In the process of researching the reconfigurable reflective array, it is found that under the condition of the same unit insertion loss, higher phase resolution can improve the array gain of the reconfigurable reflective array. Compared with the continuous reflective phase, the array gain reduction caused by different quantization bits is shown in Table 1, which is from Billy Wu et al. "On the Selection of the Number of Bits to Control a Dynamic Digital MEMS Reflectarray", IEEE ANTENNA AND WIRELESS PROGAGATION LETTERS VOL 7, 2008. From the engineering practice point of view, high phase quantization bits will bring large unit insertion loss, and the insertion loss will increase significantly with the increase of frequency. Therefore, in the millimeter wave frequency band, 2-bit quantization phase is the best choice for most reconfigurable reflective array surfaces. From the polarization point of view, compared with the single-polarized array system, the dual-polarized array system has double communication capacity, significant anti-multipath fading ability, high channel robustness in complex propagation environment and strong interference suppression ability at the same frequency, and is the first choice for high-generation communication systems. Therefore, the performance of the efficient dual-channel dual-polarized 2-bit reconfigurable reflective unit is the design focus of the reconfigurable reflective array in the communication field.

[0003] Table 1 Array gain reduction caused by different quantization bits

[0004] At present, there is a dual-channel dual-polarized 2-bit reconfigurable reflective unit based on a microstrip resonant structure, which loads 2 pin diodes on the horizontal and vertical polarization two resonant channels respectively, and can independently control the reflective phase of the two channels, and has dual-channel, dual-polarized 2-bit phase reconfiguration capability. The unit works in the S band, and the reflective phase steps in the range of 90°±30°, the effective working bandwidth is 3.7%, and the maximum reflective amplitude insertion loss is 1.5dB. The working bandwidth of the model in the article is relatively narrow, and if the unit is designed to work in the millimeter wave frequency band, the insertion loss will be much larger than 1.5dB, which is difficult to meet the requirements of most millimeter wave communication. SUMMARY

[0005] The embodiment of the present application provides a dual-channel millimeter wave reflective reconfigurable AIP unit based on functional structure integration design, which is used for solving the problems in the background art.

[0006] Other characteristics and advantages of the present application will become apparent from the following detailed description, or will be learned by practice of the present application.

[0007] According to a first aspect of the embodiment of the present application, a dual-channel millimeter wave reflective reconfigurable AIP unit based on functional structure integration design is provided, comprising a slot-coupled microstrip antenna and a dual-channel reflective phase shift bare chip; the slot-coupled microstrip antenna comprises an HTCC ceramic upper tube shell, a first HTCC ceramic circuit sheet, a Kovar metal wall and a second HTCC ceramic circuit sheet which are sequentially welded from top to bottom; wherein the HTCC ceramic upper tube shell is provided with a radiation patch, and the radiation patch is provided with two branches; the first HTCC ceramic circuit sheet comprises a metal slot floor and a metal feed layer in the cavity of the ceramic body, the metal slot floor is provided with two slots, and the metal feed layer comprises two feed sheets and a control signal bonding finger; the second HTCC ceramic circuit sheet comprises a metal adapter circuit sheet and a metal QFN pad arranged on the upper surface and the lower surface respectively, and is used for completing signal switching between the upper surface and the lower surface; the dual-channel reflective phase shift bare chip is mounted on the metal feed layer, on one hand, signal coupling is performed between the two feed sheets on the metal feed layer, the two slots on the metal slot floor and the radiation patch, and on the other hand, the control end is fanned out to the corresponding position of the metal QFN pad through the connection between the control signal bonding finger of the metal feed layer and the metal adapter circuit sheet of the second HTCC ceramic circuit sheet; after welding is completed, the slot position of the metal slot floor corresponds to the branch on the radiation patch and the position of the feed sheet of the metal feed layer.

[0008] According to the embodiment of the present application, a metal short circuit column is further included, which is used for realizing the connection between the control signal bonding finger of the metal feed layer and the metal adapter circuit sheet of the second HTCC ceramic circuit sheet.

[0009] According to the embodiment of the present application, the HTCC ceramic upper tube shell comprises an upper tube shell and a radiation patch, the upper tube shell is internally provided with a cavity, and the radiation patch is arranged in the cavity; the radiation patch is overall square-shaped, and two mutually perpendicular sides are respectively provided with square-shaped branches.

[0010] According to the embodiment of the present application, the metal slot floor of the first HTCC ceramic circuit sheet is overall square-shaped, and the metal slot floor is provided with two mutually perpendicular I-shaped slots.

[0011] According to the embodiment of the present application, the ceramic body of the first HTCC ceramic circuit sheet is internally provided with a plurality of columnar solid metal shielding holes.

[0012] According to the embodiment of the present application, the metal feeding layer of the first HTCC ceramic circuit sheet further comprises a square metal circuit sheet as a mounting floor of the double-channel reflective phase shift bare chip.

[0013] According to the embodiment of the present application, the double-channel reflective phase shift bare chip is mounted on the square metal circuit sheet through conductive glue.

[0014] According to the embodiment of the present application, the double-channel reflective phase shift bare chip is respectively interconnected with the feeding sheet and the control signal bonding finger through gold wire.

[0015] According to the embodiment of the present application, the second HTCC ceramic circuit sheet further comprises a square ceramic plate, and the metal adapter circuit sheet and the metal QFN pad are respectively arranged on the upper surface and the lower surface of the square ceramic plate; a plurality of layers of metal traces are arranged inside the square ceramic plate, and are used to fan out the control end of the double-channel reflective phase shift bare chip connected by the metal adapter circuit sheet to the corresponding position of the QFN pad.

[0016] According to the embodiment of the present application, the HTCC ceramic upper tube shell is welded with the first HTCC ceramic circuit sheet through a gold-tin fusion sealing process; the first HTCC ceramic circuit sheet is welded with the Kovar metal wall through silver-copper welding; the Kovar metal wall is welded with the second HTCC ceramic circuit sheet through the gold-tin fusion sealing process; and the metal short circuit column is welded with the first HTCC ceramic circuit sheet and the second HTCC ceramic circuit sheet through a gold-tin solder sheet.

[0017] Compared with the prior art, the beneficial effects of the above technical solutions are as follows: based on the functional packaging integration design idea, the HTCC ceramic is taken as a substrate, a wideband, double-channel, dual-polarized slot-coupled microstrip antenna is printed, and a double-channel reflective phase shift bare chip is integrated, thereby forming a double-channel, dual-polarized independent controllable 2-bit reconfigurable AIP unit, realizing 15% working bandwidth within 90°±15° phase accuracy, and the maximum is not more than 2.1dB, and compared with the double-channel reflective phase shift bare chip, the main polarization reflection amplitude of the present application only increases by 0.25dB, reaching the leading level in the field, and meeting most millimeter wave communication requirements in engineering. BRIEF DESCRIPTION OF DRAWINGS

[0018] The drawings herein are incorporated into the specification and form part of the specification, show embodiments consistent with the present application, and together with the specification, serve to explain the principles of the present application. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0019] Figure 1The figure is a schematic diagram of a dual-channel millimeter wave reflective reconfigurable AIP unit based on the integration design of function and structure according to an embodiment of the present application.

[0020] Figure 2 The figure is a schematic diagram of an HTCC ceramic upper tube shell according to an embodiment of the present application.

[0021] Figure 3 The figure is a schematic diagram of a first HTCC ceramic circuit sheet according to an embodiment of the present application.

[0022] Figure 4 The figure is a schematic diagram of a dual-channel reflective phase shift bare chip according to an embodiment of the present application.

[0023] Figure 5 The figure is a schematic diagram of a second HTCC ceramic circuit sheet according to an embodiment of the present application.

[0024] Figure 6 The figure is a working principle diagram of a dual-channel millimeter wave reflective reconfigurable AIP unit according to an embodiment of the present application.

[0025] Figure 7 The figure is a reflection amplitude simulation diagram of a dual-channel reflective phase shift bare chip according to an embodiment of the present application.

[0026] Figure 8 The figure is a reflection phase simulation diagram of a dual-channel reflective phase shift bare chip according to an embodiment of the present application.

[0027] Figure 9 The figure is a main polarization reflection amplitude simulation result diagram of a dual-channel millimeter wave reflective reconfigurable AIP unit based on the integration design of function and structure according to an embodiment of the present application.

[0028] Figure 10 The figure is a main polarization reflection phase simulation result diagram of a dual-channel millimeter wave reflective reconfigurable AIP unit based on the integration design of function and structure according to an embodiment of the present application.

[0029] The figure is a schematic diagram of a dual-channel millimeter wave reflective reconfigurable AIP unit based on the integration design of function and structure according to an embodiment of the present application. DETAILED DESCRIPTION

[0030] Embodiments of the present application are described below in detail with reference to examples shown in the drawings, wherein the same or similar numerals represent the same or similar modules or modules having the same or similar functions throughout. The embodiments described below by reference to the drawings are exemplary and are for the purpose of explaining the present application only and should not be understood as limiting the present application. On the contrary, the embodiments of the present application include all changes, modifications and equivalents falling within the spirit and scope of the appended claims.

[0031] To meet the requirements of engineering practice, further expand the working frequency band, and reduce the insertion loss of millimeter wave frequency band unit, an embodiment of the present application is a high-efficiency dual-channel millimeter wave reconfigurable AIP unit based on functional structure integration design. The unit takes HTCC ceramic as the substrate, prints a broadband, dual-channel, dual-polarized slot-coupled microstrip antenna, and uses a dual-channel reflective phase shift bare chip 6 as a reconfigurable device to realize 2-bit reflective phase shift that can be independently controlled for dual-channel incident electromagnetic waves. In terms of structure, the HTCC ceramic substrate of the unit completes the air-tight packaging protection of the reflective phase shift bare chip, ensuring the stability and reliability of long-term operation. The functional structure integration design enables the dual-channel millimeter wave 2-bit reconfigurable AIP unit in the present application to achieve a 15% working bandwidth within a 90°±15° phase shift accuracy, and the large insertion loss is not more than 2.1 dB, which is only increased by 0.25 dB compared with the dual-channel reflective phase shift bare chip 6, reaching the leading level in the field.

[0032] Please refer to Figure 1 The dual-channel millimeter wave reflective reconfigurable AIP unit based on functional structure integration design mainly includes a slot-coupled microstrip antenna and a dual-channel reflective phase shift bare chip 6. The slot-coupled microstrip antenna includes an HTCC ceramic upper tube shell 1, a first HTCC ceramic circuit sheet 2, a Kovar metal wall 3 and a second HTCC ceramic circuit sheet 5 welded in order from top to bottom.

[0033] Specifically, the HTCC ceramic upper tube shell 1 is provided with a radiation patch 102, and the radiation patch 102 is provided with two branches; the first HTCC ceramic circuit sheet 2 includes a metal gap floor 201 and a metal feed layer 203 in a cavity of a ceramic body 202, the metal gap floor 201 is provided with two gaps, and the metal feed layer 203 includes two feed sheets 2031 and a control signal bonding finger 2033; the second HTCC ceramic circuit sheet 5 includes a metal adapter circuit sheet 501 and a metal QFN pad 502 arranged on the upper surface and the lower surface respectively, and is used for completing signal switching of the upper surface and the lower surface; the double-channel reflective phase shift bare chip 6 is mounted on the metal feed layer 203, and on one hand, the double-channel reflective phase shift bare chip 6 is coupled with the radiation patch 102 through the two feed sheets 2031 on the metal feed layer 203 and the two gaps on the metal gap floor 201, and on the other hand, the double-channel reflective phase shift bare chip 6 is connected with the metal adapter circuit sheet 501 of the second HTCC ceramic circuit sheet 5 through the control signal bonding finger 2033 of the metal feed layer 203, and the control end is fanned out to the corresponding position of the metal QFN pad 502; after welding is completed, the gap position of the metal gap floor 201 corresponds to the branch on the radiation patch 102 and the position of the feed sheet 2031 of the metal feed layer 203.

[0034] Please continue to refer to Figure 1 The gap-coupled microstrip antenna further includes a metal short-circuit column 4 enclosed in the Kovar metal wall 3, and used for connecting the control signal bonding finger 2033 of the metal feed layer 203 with the metal adapter circuit sheet 501 of the second HTCC ceramic circuit sheet 5.

[0035] In the embodiment, a broadband, double-channel and dual-polarized gap-coupled microstrip antenna is printed on an HTCC ceramic substrate, the gap-coupled microstrip antenna takes the HTCC ceramic substrate as a medium and takes a ceramic cavity as a resonant cavity, and a broadband and double-channel coupling feed structure is formed through mutually perpendicular rectangular gaps. The double-channel reflective phase shift bare chip 6 is arranged on a feed layer of the gap-coupled microstrip antenna and is interconnected with a feed line at a closest distance, a control end of the double-channel reflective phase shift bare chip 6 is interconnected with the metal QFN pad 502, the pad can be connected with a PCB mother board through an SMT mode and is controlled by a wave control module.

[0036] In order to more clearly describe the double-channel millimeter wave reflective reconfigurable AIP unit proposed in the embodiment, the structure of the HTCC ceramic upper tube shell 1, the first HTCC ceramic circuit sheet 2, the Kovar metal wall 3 and the second HTCC ceramic circuit sheet 5 and the connection relationship with the double-channel reflective phase shift bare chip 6 are described in detail.

[0037] Please refer to Figure 2The HTCC ceramic upper shell 1 mainly comprises an upper shell 101 and a radiation patch 102. The upper shell 101 is internally provided with a cavity, and the radiation patch 102 is mounted in the cavity. The radiation patch 102 is in a square shape as a whole, and two mutually perpendicular sides are respectively provided with square stubs.

[0038] In one embodiment, the material of the upper shell 101 is 90% alumina (black porcelain), the planar shape is a square with a side length of L, the thickness is h, and the internal cavity is in a square shape with a side length of L and a height of h1. In one embodiment, the radiation patch 102 is made of metal and is in a square shape as a whole with a side length of a. The stubs of the radiation patch 102 are rectangular stubs with a length of a1 and a width of a2. In one embodiment, the numerical values of the structural parameters are shown in Table 2.

[0039] Please refer to Figure 3 The first HTCC ceramic circuit sheet 2 mainly comprises a metal gap floor 201, a ceramic body 202, and a metal feed layer 203. The metal gap floor 201 is in a square shape as a whole, and two mutually perpendicular H-shaped gaps are formed in the metal gap floor 201. In one embodiment, the size parameters of the H-shaped gap are shown in Table 2. Figure 3

[0040] Please continue to refer to Figure 3 The ceramic body 202 is in a square shape as a whole, and the size is comparable to the HTCC ceramic upper shell 1, with a side length of L. The material is 90% alumina (black porcelain) or 99% alumina (DPC substrate), and the inside has a plurality of columnar solid metal shielding holes.

[0041] Further, the metal feed layer 203 comprises two feed sheets 2031, a square metal circuit sheet 2032, and a plurality of control signal bonding fingers 2033. The two feed sheets 2031 are rectangular feed sheets 2031 with a length of C2 and a width of C1. The square metal circuit sheet 2032 is in a square shape with a side length of C, serving as a mounting floor of the dual-channel reflective phase shift bare chip 6. In one embodiment, the numerical values of the structural parameters of the metal feed layer 203 are shown in Table 2.

[0042] In actual application, please refer to Figure 4 The dual-channel reflective phase shift bare chip 6 is mounted on the square metal circuit sheet 2032 through conductive adhesive, and is interconnected with the plurality of control signal bonding fingers 2033 through gold wires on one hand, and is interconnected with the two feed sheets 2031 through gold wires on the other hand.

[0043] Please refer to Figure 5 ​, the second HTCC ceramic circuit sheet 5 is in a square sandwich structure as a whole, and the side length is L. Specifically, the upper surface of the second HTCC ceramic circuit sheet 5 is a metal adapter circuit sheet 501 and a metal QFN pad 502, the middle is a ceramic body 202, the ceramic body 202 internally contains multiple layers of metal traces, and can fan out the control end of the double-channel reflective phase shift bare chip 6 from the metal adapter circuit sheet 501 to the corresponding position of the metal QFN pad 502, and play a role of adapter. In an embodiment, the material of the ceramic body 202 is 90% alumina (black porcelain).

[0044] In the embodiment, the HTCC ceramic upper tube shell 1 and the first HTCC ceramic circuit sheet 2 are welded by a gold-tin fusion sealing process; the first HTCC ceramic circuit sheet 2 and the Kovar metal wall 3 are welded by silver-copper; the Kovar metal wall 3 and the second HTCC ceramic circuit sheet 5 are welded by a gold-tin fusion sealing process; and the metal short circuit column 4 is welded with the first HTCC ceramic circuit sheet 2 and the second HTCC ceramic circuit sheet 5 by a gold-tin solder sheet.

[0045] Table 2 Size parameter table

[0046] Please refer to Figure 6 , the working principle of the double-channel millimeter wave reflective reconfigurable AIP unit in the embodiment of the application is shown. After the incident electromagnetic wave passes through the resonant radiation patch 102, it is coupled into the feed sheet 2031 from the gap floor, enters the double-channel reflective phase shift bare chip 6 after passing through the gold wire. The external wave control signal directly acts on the double-channel reflective phase shift bare chip 6 through the QFN pin and the metal short circuit column 4 of the AIP unit, controls the phase shift amount of the incident electromagnetic wave and reflects, and finally the electromagnetic wave returns along the original path, radiates to the free space, and completes the reflection phase reconstruction.

[0047] In order to further verify the feasibility of the double-channel millimeter wave reflective reconfigurable AIP unit in the embodiment of the application, simulation verification is performed.

[0048] Figure 7 For the reflection amplitude of the double-channel reflective phase shift bare chip in the embodiment of the application, it can be seen that in the range of 23GHz~26.75GHz, the maximum reflection amplitude insertion loss of the four reflection phases does not exceed 2dB. The chip is a GaAs radio frequency chip, and adopts a FET process.

[0049] Figure 8 For the reflection phase of the double-channel reflective phase shift bare chip in the embodiment of the application, it can be seen that in the range of 23GHz~26.75GHz, the accuracy of the four reflection phase steps is 90°±10°.

[0050] Figure 9For the main polarization reflection amplitude simulation results of the high-efficiency dual-channel millimeter wave 2-bit reconfigurable AIP unit based on the functional structure integrated design, it can be seen that in the range of 23GHz~26.75GHz, the reflection amplitude insertion loss of four reflection phases is not more than 2.1dB, and the bandwidth is 15%. Compared with Figure 7 The reflection amplitude of the bare chip is only increased by 0.25dB, which proves the effectiveness of the design method.

[0051] Figure 10 For the main polarization reflection phase simulation results of the high-efficiency dual-channel millimeter wave 2-bit reconfigurable AIP unit based on the functional structure integrated design, it can be seen that in the range of 23GHz~27GHz, the four main polarization reflection phase accuracies are 90°±15°, and compared with Figure 8 The reflection phase accuracy is slightly decreased compared with the reflection phase accuracy of the bare chip, but it is still in a leading position compared with other existing dual-channel, dual-polarization, 2-bit reflection reconfigurable units.

[0052] The high-efficiency dual-channel millimeter wave reflection reconfigurable AIP unit based on the functional structure integrated design is shown in the embodiment of the application. Through the design idea based on the functional structure integration, a better bare chip parameter is applied to participate in the reflection phase reconstruction. The joint simulation results show that in the 90°±15° phase accuracy, a 15% working bandwidth is realized, the unit insertion loss is not more than 2.1dB, and compared with the dual-channel reflection phase shift bare chip, the main polarization reflection amplitude of the application is only increased by 0.25dB, which proves the innovation and effectiveness of the design method.

[0053] It should be noted that in the description of the embodiments of the application, unless otherwise explicitly specified and limited, the terms "arrangement", "connection" should be understood broadly, for example, it can be fixedly connected, or detachably connected, or integrally connected, it can be directly connected, or indirectly connected through an intermediate medium. For ordinary skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances; the drawings in the embodiments are used to clearly and completely describe the technical solutions in the embodiments of the application, obviously, the described embodiments are part of the embodiments of the application, not all the embodiments. The components of the embodiments of the application described and shown in the drawings herein can be arranged and designed in various configurations.

[0054] Although the embodiments of the application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limiting the application, and ordinary skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the application.

Claims

1. A dual-channel millimeter-wave reflective reconfigurable AIP unit based on the integrated design of functional structures, characterized in that, The application relates to a gap-coupled microstrip antenna and a double-channel reflective phase-shifting bare chip, wherein the gap-coupled microstrip antenna comprises, from top to bottom, an HTCC ceramic upper tube shell, a first HTCC ceramic circuit sheet, a Kovar metal wall and a second HTCC ceramic circuit sheet; the HTCC ceramic upper tube shell is provided with a radiation patch, and the radiation patch is provided with two branches; the first HTCC ceramic circuit sheet comprises a metal gap floor and a metal feed layer in a ceramic body cavity, the metal gap floor is provided with two gaps, and the metal feed layer comprises two feed sheets and a control signal bonding pin; the second HTCC ceramic circuit sheet comprises a metal adapter circuit sheet and a metal QFN pad arranged on the upper surface and the lower surface respectively, and is used for completing signal switching between the upper surface and the lower surface; the double-channel reflective phase-shifting bare chip is mounted on the metal feed layer, and on one hand, the double-channel reflective phase-shifting bare chip is signal-coupled with the radiation patch through the two feed sheets on the metal feed layer and the two gaps on the metal gap floor, and on the other hand, the double-channel reflective phase-shifting bare chip is connected with the metal adapter circuit sheet of the second HTCC ceramic circuit sheet through the control signal bonding pin of the metal feed layer, so that the control end is fanned out to the corresponding position of the metal QFN pad; after welding, the gap position of the metal gap floor corresponds to the branch on the radiation patch and the position of the feed sheet of the metal feed layer.

2. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration design of functional structures according to claim 1, characterized in that, The application further comprises a metal short-circuit column, which is used for connecting the control signal bonding pin of the metal feed layer with the metal adapter circuit sheet of the second HTCC ceramic circuit sheet.

3. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration design of functional structures according to claim 1, characterized in that, The HTCC ceramic upper tube shell comprises an upper tube shell and a radiation patch, the upper tube shell is internally provided with a cavity, and the radiation patch is arranged in the cavity; the radiation patch is square as a whole, and two mutually perpendicular sides are respectively provided with square branches.

4. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration design of functional structures according to claim 1, characterized in that, The metal gap floor of the first HTCC ceramic circuit sheet is square as a whole, and the metal gap floor is provided with two mutually perpendicular H-shaped gaps.

5. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration of functional structures according to claim 1, characterized in that, The ceramic body of the first HTCC ceramic circuit sheet is internally provided with a plurality of columnar solid metal shielding holes.

6. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration of functional structures of claim 1, wherein, The metal feed layer of the first HTCC ceramic circuit sheet further comprises a square metal circuit sheet as a mounting floor of the double-channel reflective phase-shifting bare chip.

7. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration design of functional structures according to claim 6, characterized in that, The double-channel reflective phase-shifting bare chip is mounted on the square metal circuit sheet through conductive glue.

8. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration design of functional structures according to claim 1, characterized in that, The double-channel reflective phase-shifting bare chip is interconnected with the feed sheet and the control signal bonding pin through gold wires respectively.

9. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration of functional structures of claim 1, wherein, The second HTCC ceramic circuit sheet further comprises a square ceramic plate, the metal adapter circuit sheet and the metal QFN pad are arranged on the upper surface and the lower surface of the square ceramic plate respectively; the square ceramic plate is internally provided with a plurality of metal traces, which are used for fanning out the control end of the double-channel reflective phase-shifting bare chip connected with the metal adapter circuit sheet to the corresponding position of the QFN pad.

10. The dual-channel millimeter-wave reflective reconfigurable AIP cell based on the integration of functional structures of claim 1, wherein, The HTCC ceramic upper tube shell is welded with the first HTCC ceramic circuit sheet through a gold-tin fusion sealing process; the first HTCC ceramic circuit sheet is welded with the Kovar metal wall through silver-copper welding; the Kovar metal wall is welded with the second HTCC ceramic circuit sheet through a gold-tin fusion sealing process; and the metal short-circuit column is welded with the first HTCC ceramic circuit sheet and the second HTCC ceramic circuit sheet through a gold-tin solder sheet.

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