Ring cutting depth compensation method and device, wafer dicing apparatus and storage medium

Abstract

This invention provides a method, apparatus, dicing device, and storage medium for compensating for the depth of annular dicing. The method includes: adjusting the orientation of a wafer sample using a calibration stage to achieve a target orientation; after the wafer sample in the target orientation is transferred to a dicing disk, controlling a dicing blade to cut the wafer sample as it rotates with the dicing disk, thereby creating an annular dicing on the wafer sample; obtaining a dicing depth compensation curve based on the dicing depth measurement results obtained from the annular dicing measurement stage; and adjusting the dicing depth of the wafer to be diced based on the dicing depth compensation curve during dicing. This invention avoids the impact of errors in the flatness of the dicing disk on the accuracy of the annular dicing depth, thus improving the accuracy of the annular dicing depth created by the dicing blade on the wafer to be diced.

Description

Technical Field

[0001] This invention relates to the field of semiconductor cutting technology, and in particular to a method, apparatus, dicing device, and storage medium for compensating for the depth of annular cutting. Background Technology

[0002] With the development of wafer processing equipment, more complex processing techniques and methods are being adopted to manufacture more precise products. This is especially true for the circumferential dicing process for wafer trimming, which places higher demands on time and the production environment. Currently, most wafer dicing equipment uses dynamic interpolation to adjust the cutting depth of the dicing blades.

[0003] However, during the circumferential dicing process of wafer trimming, the dicing worktable in the dicing equipment has a certain flatness error, which prevents the wafer from being flatly adsorbed on the dicing worktable in an ideal state. This introduces an error into the dicing depth of the wafer, resulting in an unsatisfactory dicing depth accuracy of the final circumferential cut. Summary of the Invention

[0004] The purpose of this invention is to provide a method, apparatus, dicing device, and storage medium for compensating the depth of annular dicing, so as to avoid the influence on the cutting depth accuracy of the annular dicing caused by the error of the flatness of the cutting work disk, and to achieve control over the cutting depth accuracy of the wafer to be cut, so as to further improve the cutting depth accuracy of the annular dicing cut made by the dicing blade on the wafer to be cut on the original basis.

[0005] According to a first aspect of the present invention, a method for compensating for annular cutting depth is provided, applied to a dicing device, the dicing device including a calibration table, a cutting disc, and a cutting depth measuring table, the method comprising:

[0006] The wafer sample is oriented using a calibration stage to adjust its orientation to the target orientation.

[0007] After the wafer sample in the target orientation is transferred to the dicing worktable, the dicing blade is controlled to cut the wafer sample that rotates with the dicing worktable, so that the dicing blade cuts an annular slit on the wafer sample.

[0008] Based on the cutting depth measurement results obtained by the cutting depth measurement worktable for the annular cut, a cutting depth compensation curve is obtained; the cutting depth measurement results include the cutting depth values ​​corresponding to the annular cut at different measurement positions in the wafer sample under the target posture; the cutting depth compensation curve is the correspondence between the various annular cut positions cut by the dicing blade in the wafer to be cut and the cutting height compensation value.

[0009] When dicing a wafer, the dicing depth is adjusted by controlling the dicing blade based on the dicing depth compensation curve.

[0010] Optionally, based on the cutting depth measurement results obtained from the annular incision measured by the cutting depth measurement worktable, a cutting depth compensation curve is obtained, including:

[0011] For each measurement location, the difference in cutting depth between the ring cut and the corresponding cutting depth of the ring cut at the measurement location is calculated based on the target cutting depth value and the cutting depth value of the ring cut at the measurement location.

[0012] Based on the depth difference of the circular incision at each measurement position and the position information of each measurement position, the depth difference curve is obtained;

[0013] Based on the depth difference curve, the cutting depth compensation curve is obtained.

[0014] Optionally, based on the depth-of-cut difference curve, a cutting depth compensation curve is obtained, including:

[0015] Based on the depth difference curve, determine the depth compensation value corresponding to each circumferential cut position;

[0016] Based on the cutting depth compensation value corresponding to each circumferential cut position and the position information corresponding to each circumferential cut position, the cutting depth compensation curve is obtained.

[0017] Optionally, the target orientation is the orientation of the wafer sample when the notch in the wafer sample moves to the target position; the orientation of the wafer sample is adjusted using a calibration stage to bring the orientation of the wafer sample to the target orientation, including:

[0018] The position of the notch in the wafer sample on the calibration stage is detected to obtain the current position of the notch on the calibration stage;

[0019] Based on the positional relationship between the current position and the target position, the calibration stage is controlled to rotate so that the notch moves to the target position as the calibration stage rotates.

[0020] Optionally, before obtaining the cutting depth compensation curve based on the cutting depth measurement results obtained from the annular cut using the cutting depth measurement worktable, the following steps are also included:

[0021] Multiple measurement positions are determined on the annular incision along its circumference;

[0022] For each measurement location, the depth of the annular cut is measured using a depth measurement table to obtain the corresponding depth value of the annular cut at each measurement location.

[0023] Optionally, multiple measurement locations are evenly distributed along the circumference of the annular incision.

[0024] Optionally, before adjusting the cutting depth of the wafer to be cut based on the cutting depth compensation curve during the cutting process, the method further includes:

[0025] The orientation of the wafer to be cut is adjusted using a calibration worktable to bring the wafer to the target orientation, and the wafer in the target orientation is then transferred to the cutting worktable.

[0026] Optionally, when dicing the wafer to be diced, the dicing depth of the dicing blade is adjusted based on the dicing depth compensation curve, including:

[0027] Obtain the cutting control parameters when the dicing blade makes an annular cut on the wafer sample. The cutting control parameters include the radius of the annular cut and the rotation direction of the cutting work plate.

[0028] Based on the first preset cutting depth value and the cutting depth compensation curve, calculate the height information of the cutting blade on the Z-axis at each circumferential cutting position in the wafer to be cut;

[0029] Based on the height information of the cutting blade on the Z-axis corresponding to each circumferential cutting position, and the cutting control parameters of the cutting blade when circumferentially cutting the wafer sample, the cutting blade is controlled to cut the wafer to be cut.

[0030] Optionally, before adjusting the cutting depth of the wafer to be cut based on the cutting depth compensation curve during the cutting process, the method further includes:

[0031] The orientation of the wafer test specimen is adjusted to the target orientation using a calibration workbench;

[0032] After the wafer test sample in the target posture is transferred to the dicing worktable, the dicing depth of the wafer test sample is adjusted according to the second preset cutting depth value and the cutting depth compensation curve, so that the dicing blade cuts an annular slit on the wafer test sample.

[0033] Based on the cutting depth measurement results obtained by the cutting depth measurement workbench from the annular notch on the wafer test specimen, determine whether the difference between the cutting depth value corresponding to the annular notch on the wafer test specimen at different measurement positions and the second preset cutting depth value is within the target range;

[0034] If the values ​​are not all within the target range, the cutting depth compensation curve is adjusted based on the cutting depth measurement results obtained from the annular notch on the wafer test specimen to obtain a new cutting depth compensation curve. The new wafer test specimen is then placed on the calibration workbench, and the above steps are repeated until the cutting depth values ​​corresponding to the annular notch on the wafer test specimen at different measurement positions and the difference between the second preset cutting depth value are all within the target range. The current cutting depth compensation curve is then used as the final cutting depth compensation curve.

[0035] According to a second aspect of the present invention, a compensation device for annular cutting depth is provided, applied to a dicing device, the dicing device including a calibration worktable, a cutting worktable, and a cutting depth measuring worktable, the device comprising:

[0036] The calibration stage control module is used to adjust the orientation of the wafer sample using the calibration stage, so that the orientation of the wafer sample is adjusted to the target orientation.

[0037] The first cutting stage control module is used to control the cutting blade to cut the wafer sample that rotates with the cutting stage after the wafer sample in the target posture is transferred to the cutting stage, so that the cutting blade can cut an annular cut on the wafer sample.

[0038] The compensation curve calculation module is used to obtain the cutting depth compensation curve based on the cutting depth measurement results of the annular cut measured by the cutting depth measurement workbench. The cutting depth measurement results include the cutting depth values ​​corresponding to the annular cut at different measurement positions in the wafer sample under the target posture. The cutting depth compensation curve is the correspondence between each annular cut position cut by the dicing blade in the wafer to be cut and the cutting height compensation value.

[0039] The second cutting stage control module is used to adjust the cutting depth of the wafer to be cut based on the cutting depth compensation curve when cutting the wafer.

[0040] According to a third aspect of the invention, a dicing apparatus is provided, including a memory and a processor, the memory for storing processor-executable instructions; the processor is configured to execute the executable instructions in the memory to implement the steps of the method as described in the first aspect or its various implementations.

[0041] According to a fourth aspect of the present invention, a computer-readable storage medium is provided having a computer program stored thereon, which, when executed by a processor, implements the steps of the method as described in the first aspect or its various implementations.

[0042] Compared with the prior art, the beneficial effects of the present invention are:

[0043] Before dicing the wafer, a dicing device is used to perform a circular dicing on the wafer sample in the target orientation. Based on the dicing depth measurement results from the circular dicing on the wafer sample, a dicing depth compensation curve is obtained to adjust the dicing depth of the dicing blade during wafer dicing. This curve controls the dicing depth of the dicing blade on the wafer, ultimately improving the dicing depth accuracy of the circular dicing on the wafer. Therefore, the method provided in this application can avoid the influence of errors in the flatness of the dicing worktable and other subtle factors on the dicing depth accuracy of the circular dicing, achieving control over the dicing depth accuracy of the wafer and further improving the dicing depth accuracy of the circular dicing on the wafer. Attached Figure Description

[0044] Figure 1 An application scenario diagram provided for one embodiment of this application;

[0045] Figure 2 A flowchart illustrating a method for compensating the depth of annular cuts, provided as an embodiment of this application;

[0046] Figure 3 A schematic diagram of the structure of a slicing device according to an embodiment of this application is provided;

[0047] Figure 4 A schematic diagram showing the cut depth difference at each measurement location in a wafer sample provided in an embodiment of this application;

[0048] Figure 5 A schematic diagram of the depth-of-cut difference curve provided in one embodiment of this application;

[0049] Figure 6 A schematic diagram of a cutting depth compensation curve provided for an embodiment of this application;

[0050] Figure 7 A schematic diagram of a ring-shaped cutting depth compensation device provided as an embodiment of this application;

[0051] Figure 8 This is a schematic block diagram of a dicing device according to one embodiment of the present application. Detailed Implementation

[0052] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0053] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or server that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or devices.

[0054] As mentioned above, in the field of wafer trimming, in order to ensure the accuracy of the processing depth of the wafer ring processing, dynamic interpolation methods, such as CCS and NCS, are generally used to adjust the cutting depth of the dicing tool. The above methods can usually control the accuracy of the wafer processing depth to about ±7μm.

[0055] However, during the circumferential dicing process of wafer trimming, the dicing worktable on the dicing equipment has a certain flatness error, which is generally around 5μm. Therefore, the flatness error of the dicing worktable will cause defects such as tilting and unevenness of the wafer placed on it in some places, so that the wafer cannot be adsorbed on the dicing worktable in an ideal state, which will introduce errors in the dicing depth of the wafer.

[0056] To address at least one of the technical problems existing in the prior art or related technologies, this invention provides a method, apparatus, dicing device, and storage medium for compensating the annular dicing depth. The method includes: adjusting the orientation of a wafer sample using a calibration stage to achieve a target orientation; after the wafer sample in the target orientation is transferred to a dicing disk, controlling a dicing blade to cut the wafer sample rotating with the dicing disk, thereby creating an annular dicing on the wafer sample; obtaining a dicing depth compensation curve based on the dicing depth measurement results obtained by a dicing depth measurement stage; the dicing depth measurement results include the dicing depth values ​​corresponding to the annular dicing at different measurement positions in the wafer sample in the target orientation; the dicing depth compensation curve represents the correspondence between each annular dicing position cut by the dicing blade and the dicing height compensation value in the wafer to be diced; and adjusting the dicing depth of the wafer to be diced based on the dicing depth compensation curve during dicing. This application can avoid the influence of errors in the flatness of the cutting worktable and other individual factors that are not easily noticeable on the cutting depth accuracy of the annular cut, thereby achieving control over the cutting depth accuracy of the wafer to be cut, and further improving the cutting depth accuracy of the annular cut made by the cutting tool on the wafer to be cut on the original basis.

[0057] It should be understood that the technical solution of this application can be applied to the following scenarios, but is not limited to:

[0058] In some possible ways, Figure 1 An application scenario diagram provided for an embodiment of this application, such as... Figure 1 As shown, this application scenario may include a dicing device 110 and a network device 120. The dicing device 110 can establish a connection with the network device 120 via a wired network or a wireless network.

[0059] For example, the dicing device 110 can be a cutting machine, a dicing machine, a trimming machine, etc., but is not limited to these. The network device 120 can be a desktop computer, a laptop computer, a tablet computer, etc., but is not limited to these. In one embodiment of this application, the network device 120 can send a request message to the dicing device 110, which can be used to request the acquisition of a cutting depth compensation curve. Further, the network device 120 can receive a response message sent by the dicing device 110, which includes the acquisition of the cutting depth compensation curve.

[0060] also, Figure 1 An illustrative example is provided with a slicing device and a network device, but in practice, other numbers of slicing devices and network devices may be included, and this application is not limited thereto.

[0061] In other possible implementations, the technical solution of this application can also be executed by the slicing device 110, or by the network device 120, and this application does not limit this.

[0062] After introducing the application scenarios of the embodiments of this application, the technical solution of this application will be described in detail below:

[0063] Figure 2 A flowchart illustrating a method for compensating for annular cutting depth provided in this application embodiment. This method is applied to a dicing device, which includes a calibration worktable, a cutting work plate, and a cutting depth measurement worktable. The method can be performed by, for example... Figure 1 The dicing device 110 shown performs the operation, but is not limited to it. For example... Figure 2 As shown, the method may include the following steps:

[0064] S210. Use the calibration stage to adjust the orientation of the wafer sample so that the orientation of the wafer sample is adjusted to the target orientation.

[0065] Here, the target orientation can be the orientation of the notch in the wafer sample placed at a specific position on the calibration stage. The specific position can be the placement position of the notch relative to the axis of the calibration stage in the preset o'clock direction. For example, if the specific position is the placement position of the notch relative to the axis of the calibration stage in the 9 o'clock direction, then the calibration stage is rotated axially so that the notch on the wafer sample is located in the 9 o'clock direction of the axis of the calibration stage, so as to complete the orientation adjustment of the wafer sample.

[0066] It should be noted that, see Figure 3The dicing equipment also includes a housing, a loading box 1, a unloading box 2, loading and unloading chambers 3, and a wafer cleaning chamber 4. The loading box 1, unloading box 2, and depth-of-cut measurement stage 5 are all located outside the housing of the dicing equipment. The loading and unloading chambers 3, wafer cleaning chamber 4, calibration stage 6, and dicing tray 7 are all located inside the housing. The loading box 1 and unloading box 2 are located on the corresponding side walls of the housing of the loading and unloading chambers 3. The depth-of-cut measurement stage 5 is located near and communicates with the loading and unloading chambers 3. The calibration stage 6 and wafer cleaning chamber 4 are also located near the loading and unloading chambers 3. Furthermore, the dicing worktable 7 is positioned close to the calibration worktable 6, and it is also positioned close to the wafer cleaning chamber 4. There are two dicing worktables 7, one of which is positioned close to the calibration worktable 6, and the other of which is positioned close to the dicing blade 11. After the wafer to be diced on the calibration worktable 6 has completed its orientation adjustment, the wafer to be diced in the target orientation is first placed on the dicing worktable 7 closest to the calibration worktable 6, and then moved from that dicing worktable 7 to the other dicing worktable 7 in the target orientation. When the dicing equipment processes the wafer, the first robot arm 8, located in the loading and unloading chamber 3, takes the wafer to be diced from the loading box 1 and places it on the calibration worktable 6. After the calibration worktable 6 calibrates the wafer to be diced, the second robot arm 9, located near the calibration worktable 6, places the wafer to be diced on the dicing work tray 7. After the wafer to be diced on the dicing work tray 7 is diced by the dicing blade 11, it is transferred by the third robot arm 10 to the wafer cleaning chamber 4 for cleaning. Finally, the cleaned wafer is taken out of the wafer cleaning chamber 4 by the first robot arm 8 and placed in the unloading box 2, completing the dicing process of the wafer.

[0067] To ensure that the circumferential cutting positions on the wafer to be cut by the dicing blade in the dicing depth compensation curve obtained in step S230 correspond to the dicing height compensation values, this step adjusts the wafer sample's orientation to the target orientation using a calibration worktable. Step S220 then performs circumferential cutting on the wafer sample in the target orientation. This establishes a unified coordinate system for the circumferential cutting positions and dicing height compensation values ​​in the determined dicing depth compensation curve. This allows the determined dicing depth compensation curve to reflect the systematic compensation required by the dicing blade itself in the current dicing equipment, thus laying a solid foundation for generating an accurate, reliable dicing depth compensation curve applicable to subsequent mass production.

[0068] S220. After the wafer sample in the target orientation is transferred to the dicing worktable, the dicing blade is controlled to cut the wafer sample that rotates with the dicing worktable, so that the dicing blade cuts an annular slit on the wafer sample.

[0069] Here, "the wafer sample in the target orientation is transferred to the dicing tray" can be understood as follows: a second robotic arm positioned near the calibration stage places the wafer sample in the target orientation onto the dicing tray, ensuring that the wafer sample is placed in the target orientation. For example, in step S210, if the target orientation is "the notch on the wafer sample is located at the 9 o'clock position on the axis of the calibration stage," after the wafer sample is transferred to the dicing tray, the notch on the wafer sample is also located at the 9 o'clock position on the axis of the dicing tray. The axis of the dicing tray is parallel to the axis of the calibration stage.

[0070] It should be noted that the dicing worktable has a certain flatness error. Therefore, when the dicing blade cuts the wafer sample rotating with the dicing worktable, the cutting depth at some circumferential positions of the annular cut on the wafer sample will fluctuate. That is, the difference between the cutting depth value at some circumferential positions and the target cutting depth value set for the wafer sample by the dicing equipment exceeds the preset range. Therefore, in this step, after the wafer sample in the target posture is transferred to the dicing worktable, the dicing blade is controlled to actually cut the wafer sample rotating with the dicing worktable. This ensures that the annular cut on the wafer sample can comprehensively reflect the real static and dynamic errors of all dicing blades in the annular cutting of the wafer sample. Therefore, by measuring the cutting depth value corresponding to different measurement positions of the annular cut in this step, the actual cutting situation of the wafer to be cut by the dicing equipment under actual working conditions can be obtained. Then, the cutting depth of the dicing blade can be adjusted according to the actual cutting situation so that the cutting depth of the annular cut on the wafer sample at each circumferential position is within the ideal error range.

[0071] Here, by transferring the wafer sample in the target orientation to the dicing worktable, the wafer sample placed on the dicing worktable can be easily used in step S230 to determine an accurate, reliable, and applicable cutting depth compensation curve for subsequent mass production based on the cutting depth measurement results measured by the cutting depth measurement worktable on the annular cut.

[0072] S230. Based on the cutting depth measurement results obtained by the cutting depth measurement workbench for the annular cut, the cutting depth compensation curve is obtained.

[0073] The depth of cut measurement results include the depth of cut values ​​corresponding to the annular cut in the wafer sample under the target orientation at different measurement positions; the depth of cut compensation curve is the correspondence between the various annular cut positions cut by the dicing blade in the wafer to be cut and the cutting height compensation value.

[0074] Here, the circumferential cutting position can be understood as the various cutting positions arranged one by one along the circumference of the circumference of the circumference.

[0075] It should be noted that the depth of cut measurement stage is equipped with a line laser measuring instrument, which is used to measure the depth of cut corresponding to the annular notch in the wafer sample at different measurement points. Here, when the depth of cut measurement stage measures the annular notch in the wafer sample, the wafer sample is kept in the target orientation, that is, the notch in the wafer sample is placed in a specific position on the depth of cut measurement stage; the axis of the depth of cut measurement stage is parallel to the axis of the calibration stage.

[0076] Since the cutting depth measurement results of the annular cut measured by the cutting depth measurement worktable can determine the cutting depth value of the annular cut in the wafer sample at different measurement positions, the difference between the cutting depth value at different measurement positions and the target cutting depth value can be determined. Therefore, the cutting depth of the dicing blade on the wafer to be cut can be adjusted according to the difference between the cutting depth value at different measurement positions and the target cutting depth value.

[0077] Furthermore, since the circumferential cutting of the wafer sample by the dicing blade is a continuous cutting process, in order to ensure that the cutting depth values ​​corresponding to each circumferential cutting position of the dicing blade are close to the target cutting depth value, in this step, by using the cutting depth compensation curve obtained from the cutting depth measurement worktable at different measurement positions of the circumferential cutting in the wafer sample under the target orientation, the dicing blade can continuously adjust the cutting height during the cutting process of the wafer to be cut according to the correspondence between each circumferential cutting position and the cutting height compensation value in the cutting depth compensation curve, so as to achieve that the difference between the cutting depth value corresponding to each circumferential cutting position and the target cutting depth value of the final circumferential cutting is within the target range.

[0078] S240. When cutting the wafer to be cut, the cutting depth of the cutting blade is adjusted based on the cutting depth compensation curve.

[0079] Here, when dicing the wafer to be diced, without the need for trial cutting and cutting depth optimization, the wafer placed on the dicing worktable is directly diced in a ring shape based solely on the cutting depth compensation curve. This can improve the dicing efficiency of the wafer to be diced, and also improve the cutting depth accuracy of each ring cutting position in the ring cut made by the dicing equipment on the wafer to be diced.

[0080] Using the above method, before dicing the wafer to be diced, the wafer sample in the target orientation is diced in a ring shape using a dicing device. Then, based on the cutting depth measurement results of the ring cut on the wafer sample, a cutting depth compensation curve is obtained to adjust the cutting depth of the dicing blade when dicing the wafer. The cutting depth compensation curve is used to control the dicing blade to adjust the cutting depth of the wafer to be diced, thereby improving the cutting depth accuracy of the ring cut made by the dicing blade on the wafer to be diced. It can be seen that the method provided in this application can avoid the influence of errors in the flatness of the dicing worktable and other individual factors that are not easily noticed on the cutting depth accuracy of the ring cut, and achieve control over the cutting depth accuracy of the wafer to be diced, so that the cutting depth accuracy of the ring cut made by the dicing blade on the wafer to be diced is further improved on the original basis.

[0081] In some possible embodiments, obtaining a cutting depth compensation curve based on the cutting depth measurement results obtained by the cutting depth measurement table for the annular cut may include the following steps:

[0082] S310. For each measurement position, calculate the difference in cutting depth of the annular cut at the measurement position based on the target cutting depth value and the cutting depth value of the annular cut at the measurement position.

[0083] For example, if the target cutting depth is 100µm and the corresponding cutting depth at measurement position A is 103µm, then the cutting depth difference of the annular cut at measurement position A is 3µm; as another example, if the target cutting depth is 100µm and the corresponding cutting depth at measurement position B is 98µm, then the cutting depth difference of the annular cut at measurement position B is -2µm.

[0084] S320. Based on the depth difference of the annular incision at each measurement position and the position information of each measurement position, the depth difference curve is obtained.

[0085] Because the dicing equipment makes an annular cut on the wafer sample with varying depths at different dicing positions, and the depth values ​​at each dicing position between two adjacent measurement positions also fluctuate, the depth difference curve obtained here, based on the depth difference at each measurement position of the annular cut and the position information of each measurement position, can be used to estimate the depth difference at each dicing position between two adjacent measurement positions, thus achieving the estimation of the depth difference at each dicing position of the entire annular cut.

[0086] Here, when determining the depth difference curve, a coordinate system is first constructed with the measurement position as the abscissa and the depth difference as the ordinate. Then, the depth difference corresponding to each measurement position is marked in the coordinate system to obtain multiple marked points. Finally, the depth difference curve is obtained by connecting two adjacent marked points.

[0087] like Figure 4 As shown, the target orientation of the wafer sample is the orientation of the notch relative to the axis of the depth measurement stage at the 9 o'clock position. The position corresponding to the notch and the annular notch is used as the zero point. Eight measurement positions are evenly distributed along the circumference of the annular notch, corresponding to 45°, 90°, 135°, 180°, 225°, 270°, 315°, and 360°. The measurement position at 360° coincides with the measurement position at 0°. The depth difference values ​​corresponding to each of these measurement positions are 0 µm, 0 µm, 3 µm, 7 µm, 1 µm, 0 µm, and -4 µm, respectively. The angles corresponding to each of the eight measurement positions are plotted as the abscissa, and the depth difference values ​​are plotted as the ordinate. The resulting depth difference curve is shown below. Figure 5 As shown.

[0088] S330. Based on the depth difference curve, the cutting depth compensation curve is obtained.

[0089] Since the cutting depth compensation value corresponding to the circumferential cutting position can be determined by the cutting depth difference value corresponding to that circumferential cutting position, the cutting depth compensation curve corresponding to the cutting depth difference value corresponding to each circumferential cutting position in the circumferential cutting can be obtained by using the cutting depth difference value curve that can estimate the cutting depth difference value corresponding to each circumferential cutting position in the circumferential cutting.

[0090] Using the above method, the difference between the cutting depth value and the target cutting depth value corresponding to each measurement position is calculated to obtain the cutting depth difference value corresponding to each measurement position. Then, using the cutting depth difference value corresponding to each measurement position of the annular cut and the position information corresponding to each measurement position, a cutting depth difference curve can be obtained, which can be used to estimate the cutting depth difference value corresponding to each annular cutting position in the entire annular cut. Finally, based on the cutting depth difference curve, a cutting depth compensation curve can be obtained to estimate the cutting depth compensation value corresponding to each annular cutting position in the annular cut. When cutting the wafer to be cut, the cutting blade controlled by the cutting depth compensation curve can make annular cuts on the wafer to be cut with high accuracy.

[0091] In some possible implementations, obtaining the cutting depth compensation curve based on the cutting depth difference curve may include the following steps:

[0092] S410. Based on the depth difference curve, determine the depth compensation value corresponding to each circumferential cut position.

[0093] Since the depth difference curve can estimate the depth difference corresponding to each circumferential position in the circumferential cut, the depth compensation value corresponding to each circumferential position of the circumferential cut can be determined based on the depth difference curve.

[0094] It should be noted that at the same circumferential cutting position, the sum of the cutting depth difference and the cutting depth compensation value corresponding to that circumferential cutting position is 0.

[0095] S420. Based on the cutting depth compensation value corresponding to each circumferential cut position and the position information corresponding to each circumferential cut position, the cutting depth compensation curve is obtained.

[0096] Here, when determining the cutting depth compensation curve, firstly, a coordinate system is constructed with the measurement position as the abscissa and the cutting depth compensation value as the ordinate. Then, the corresponding cutting depth compensation values ​​at each measurement position are marked in this coordinate system to obtain multiple marked points. Finally, the cutting depth compensation curve is obtained by connecting two adjacent marked points.

[0097] Receive as Figure 5 The example shown is the cutting depth compensation curve obtained in this step. Figure 6 As shown.

[0098] Using the above method, the final cutting depth compensation curve can cover any point on the annular cut, so that the cutting depth of the cutting blade can be adjusted according to the cutting depth compensation curve. This adjustment is not only made at the measurement position, but also at each corresponding cutting depth at each circumferential position in the annular cut, eliminating the compensation blind spot for the cutting depth adjustment of the cutting blade.

[0099] In some possible implementations, the target orientation is the orientation of the wafer sample when the notch in the wafer sample moves to the target position.

[0100] like Figure 4 As shown, the target location can be the position of the notch relative to the axis of the calibration stage at the 9 o'clock position. The notch in the wafer sample can be a V-groove in the wafer sample.

[0101] The orientation adjustment of a wafer sample using a calibration stage to bring the wafer sample to a target orientation may include the following steps:

[0102] S510. Detect the position of the notch in the wafer sample on the calibration stage to obtain the current position of the notch on the calibration stage.

[0103] Here, a fiber optic sensor can be used to detect notches in wafer samples placed on the calibration stage.

[0104] S520. Based on the positional relationship between the current position and the target position, control the rotation of the calibration stage so that the notch moves to the target position as the calibration stage rotates.

[0105] In this step, the rotation direction and angle of the calibration stage can be determined based on the positional relationship between the current position and the target position, enabling the calibration stage to quickly adjust the attitude of the wafer sample.

[0106] Using the above method, by determining the current position and target position of the notch in the wafer sample on the calibration stage, the calibration stage is controlled to rotate so that the notch moves to the target position as the calibration stage rotates, thus enabling rapid adjustment of the wafer sample's attitude on the calibration stage.

[0107] In some possible embodiments, before obtaining the cutting depth compensation curve based on the cutting depth measurement results obtained from the annular cut using the cutting depth measurement table, the following steps may also be included:

[0108] S610. Determine multiple measurement positions on the annular cut along the circumference of the annular cut.

[0109] Here, when multiple measurement positions are determined on the annular cut along the circumference, the wafer sample is kept in the target orientation.

[0110] S620. For each measurement position, the depth of the annular cut is detected at the measurement position using a depth of cut measurement table to obtain the corresponding depth value of the annular cut at each measurement position.

[0111] Using the above method, by determining multiple measurement positions on the annular cut along its circumference, the cutting depth values ​​corresponding to different measurement positions can be measured separately to obtain the current true cutting depth values ​​for each measurement position. This ensures that the cutting depth compensation curve obtained from the cutting depth measurement results measured by the cutting depth measurement workbench on the annular cut can be adapted to the current equipment conditions of the dicing device.

[0112] In some possible implementations, multiple measurement locations are evenly distributed along the circumference of the annular cut.

[0113] In this embodiment, by uniformly distributing multiple measurement positions along the circumference of the annular cut, the cutting depth measurement stage can uniformly measure the annular cut along its circumference and complete the measurement of the cutting depth value at equal intervals around the annular cut. This ensures that the cutting depth value at all representative annular cut positions within a complete annular cut is measured without omission. Furthermore, by using the cutting depth compensation curve obtained from the cutting depth values ​​measured at multiple measurement positions uniformly distributed along the circumference of the annular cut, the cutting depth of the cutting blade can be adjusted, enabling the cutting blade to cut a high-precision annular cut on the wafer to be cut.

[0114] In some possible embodiments, before adjusting the cutting depth of the wafer to be cut based on the cutting depth compensation curve, the process may further include: adjusting the attitude of the wafer to be cut using a calibration stage to adjust the attitude of the wafer to be cut to a target attitude, and transferring the wafer to be cut in the target attitude to the cutting worktable.

[0115] Here, the orientation of the wafer to be diced is adjusted to the target orientation by calibrating the worktable, and the wafer to be diced in the target orientation is transferred to the dicing worktable. This ensures that the orientation of the wafer to be diced when being diced is the same as that of the wafer sample when being diced. This allows the wafer to be diced to enter the same coordinate system as the wafer sample when being diced by the dicing equipment. This ensures that during the process of adjusting the dicing depth of the wafer to be diced based on the dicing depth compensation curve, the dicing depth compensation curve can perfectly match the current dicing depth adjustment of the wafer to be diced by the dicing blade, so that the dicing blade can accurately cut to the target dicing depth value at each circumferential cutting position.

[0116] In some possible implementations, when dicing the wafer to be diced, adjusting the dicing depth of the wafer to be diced based on the dicing depth compensation curve may include the following steps:

[0117] S710. Obtain the cutting control parameters when the dicing blade performs a ring-shaped cut on the wafer sample.

[0118] The cutting control parameters include the radius of the annular slit and the rotation direction of the cutting disc.

[0119] S720. Based on the first preset cutting depth value and the cutting depth compensation curve, calculate the height information of the cutting blade on the Z-axis at each circumferential cutting position in the wafer to be cut.

[0120] Here, the first preset cutting depth value can be the same as the target cutting depth value of the annular cut made by the dicing equipment on the wafer sample, or it can be other values ​​that are different from the target cutting depth value.

[0121] For example, when the first preset cutting depth value is 110 µm, and the cutting depth compensation value corresponding to the circumferential cutting position A in the cutting depth compensation curve is 2 µm, then when the cutting blade cuts the circumferential cutting position A, the height of the cutting blade on the Z-axis is reduced by 2 µm from the original height, so that when the cutting blade cuts the circumferential cutting position A, the cutting depth value corresponding to the circumferential cutting position A can reach 110 µm.

[0122] S730: Based on the height information of the cutting blade on the Z-axis corresponding to each circumferential cutting position, and the cutting control parameters of the cutting blade when circumferentially cutting the wafer sample, control the cutting blade to cut the wafer to be cut.

[0123] By employing the above method, the dicing blade is controlled to cut the wafer sample according to the cutting control parameters during the circumferential dicing of the wafer sample. This ensures that the physical motion conditions of the dicing equipment during wafer sample cutting are strictly reproduced, so that the cutting depth compensation curve can be completely matched with the physical motion conditions of the wafer to be cut. Consequently, when the dicing blade is controlled to cut the wafer according to the height information of the dicing blade on the Z-axis at each circumferential dicing position, the difference between the cutting depth value corresponding to each circumferential dicing position and the first preset cutting depth value is within the ideal range, thereby improving the circumferential dicing accuracy on the wafer to be cut.

[0124] In some possible embodiments, before adjusting the cutting depth of the wafer to be cut based on the cutting depth compensation curve when cutting the wafer, the following steps may also be included:

[0125] S810. Use the calibration workbench to adjust the orientation of the wafer test specimen to the target orientation.

[0126] S820. After the wafer test sample in the target posture is transferred to the dicing worktable, the dicing depth of the wafer test sample is adjusted according to the second preset cutting depth value and the cutting depth compensation curve, so that the dicing blade cuts an annular slit on the wafer test sample.

[0127] S830. Based on the cutting depth measurement results obtained by the cutting depth measurement worktable from the annular notch on the wafer test specimen, determine whether the difference between the cutting depth value corresponding to the annular notch on the wafer test specimen at different measurement positions and the second preset cutting depth value is within the target range.

[0128] To ensure the cutting accuracy of the annular nicks cut by the dicing equipment on the wafer to be diced, the cutting depth of the dicing blade on the wafer test specimen in the target orientation is adjusted before dicing using a second preset cutting depth value and a cutting depth compensation curve. This allows the dicing blade to cut an annular nick on the wafer test specimen. The cutting depth measurement results of the annular nick on the wafer test specimen are then used to determine whether the dicing blade with the cutting depth adjusted by the cutting depth compensation curve can cut a high-precision annular nick on the wafer test specimen. In other words, when the difference between the cutting depth value corresponding to the annular nick at different measurement positions on the wafer test specimen and the second preset cutting depth value is within the target range, the annular nick cut on the wafer test specimen can be considered to have high precision.

[0129] S840. If the cut depth is not within the target range, adjust the cut depth compensation curve according to the cut depth measurement results measured by the annular notch on the wafer test specimen to obtain a new cut depth compensation curve. Place the new wafer test specimen on the calibration workbench and repeat the above steps until the cut depth value corresponding to the annular notch on the wafer test specimen at different measurement positions and the difference between the second preset cut depth value are all within the target range. The current cut depth compensation curve is then used as the final cut depth compensation curve.

[0130] When the difference between the cut depth value corresponding to the annular cut on the wafer test specimen at different measurement positions and the second preset cut depth value is not within the target range, it is determined that the annular cut on the wafer test specimen can be considered to have low precision. Therefore, the cutting depth compensation curve needs to be adjusted. Thus, the cutting depth compensation curve is adjusted based on the cut depth measurement results of the annular cut on the wafer test specimen to obtain a new cutting depth compensation curve. Then, the new wafer test specimen is placed on the calibration workbench, and steps S810 to S830 are repeated to determine the new cutting depth compensation curve. If the annular cut on the wafer test specimen has high precision, and if the annular cut on the new wafer test specimen does not have high precision, the cutting depth compensation curve is adjusted again based on the cutting depth measurement results of the annular cut on the wafer test specimen until the difference between the cutting depth value corresponding to the annular cut at different measurement positions on the new wafer test specimen and the second preset cutting depth value is within the target range. This ensures that after the cutting blade adjusts the cutting depth according to the final cutting depth compensation curve, it can cut a high-precision annular cut on the wafer to be cut.

[0131] Using the above method, the wafer test specimen in the target orientation is transferred to the dicing worktable. Then, based on the second preset cutting depth value and the cutting depth compensation curve, the dicing depth of the wafer test specimen is adjusted by controlling the dicing blade to cut an annular notch on the wafer test specimen. The cutting depth measurement results of the annular notch on the wafer test specimen are measured by the cutting depth measurement worktable. It is determined whether the difference between the cutting depth value corresponding to the annular notch on the wafer test specimen at different measurement positions and the second preset cutting depth value is within the target range. If it is determined that the difference between the cutting depth value corresponding to the annular notch on the wafer test specimen at different measurement positions and the second preset cutting depth value is not within the target range, the cutting depth compensation curve is adjusted to ensure that after the dicing blade adjusts the cutting depth according to the finally obtained cutting depth compensation curve, it can cut a high-precision annular notch on the wafer to be diced.

[0132] Figure 7 This is a schematic diagram of a ring-shaped cutting depth compensation device according to an embodiment of the present invention, as shown below. Figure 7 As shown, this device is used in a dicing machine for circumferential dicing of wafers. The dicing machine includes a calibration table, a dicing disc, and a depth-of-cut measurement table. The device comprises:

[0133] The calibration stage control module 910 is used to adjust the orientation of the wafer sample using the calibration stage so that the orientation of the wafer sample is adjusted to the target orientation.

[0134] The first cutting stage control module 920 is used to control the cutting blade to cut the wafer sample that rotates with the cutting stage after the wafer sample in the target posture is transferred to the cutting stage, so that the cutting blade cuts an annular slit on the wafer sample.

[0135] The compensation curve calculation module 930 is used to obtain the cutting depth compensation curve based on the cutting depth measurement results of the annular cut measured by the cutting depth measurement worktable. The cutting depth measurement results include the cutting depth values ​​corresponding to the annular cut at different measurement positions in the wafer sample under the target posture. The cutting depth compensation curve is the correspondence between each annular cut position cut by the dicing blade in the wafer to be cut and the cutting height compensation value.

[0136] The second cutting stage control module 940 is used to adjust the cutting depth of the wafer to be cut based on the cutting depth compensation curve when cutting the wafer.

[0137] In some possible implementations, the compensation curve calculation module 930 includes:

[0138] The cutting depth difference calculation unit is used to calculate the cutting depth difference of the annular cut at each measurement position based on the target cutting depth value and the cutting depth value of the annular cut at the measurement position.

[0139] The depth difference curve calculation unit is used to obtain the depth difference curve based on the depth difference of the annular cut at each measurement position and the position information of each measurement position.

[0140] The compensation curve calculation unit is used to obtain the cutting depth compensation curve based on the cutting depth difference curve.

[0141] In some possible implementations, the compensation curve calculation unit includes:

[0142] The cutting depth compensation value determination subunit is used to determine the corresponding cutting depth compensation value of the annular cut at each annular cutting position based on the cutting depth difference curve;

[0143] The compensation curve calculation subunit is used to obtain the cutting depth compensation curve based on the cutting depth compensation value corresponding to each circumferential cut position and the position information corresponding to each circumferential cut position.

[0144] In some possible implementations, the target orientation is the orientation of the wafer sample when the notch in the wafer sample moves to the target position; the calibration stage control module 910 includes:

[0145] The current position determination unit is used to detect the position of the notch in the wafer sample on the calibration stage and obtain the current position of the notch on the calibration stage.

[0146] The calibration stage rotation control unit is used to control the rotation of the calibration stage according to the positional relationship between the current position and the target position, so that the notch moves to the target position as the calibration stage rotates.

[0147] In some possible embodiments, the device further includes:

[0148] The measurement position determination module is used to determine multiple measurement positions on the annular cut along the circumference of the annular cut.

[0149] The cutting depth measurement module is used to detect the cutting depth of the annular cut at each measurement position using a cutting depth measurement worktable, so as to obtain the corresponding cutting depth value of the annular cut at each measurement position.

[0150] In some possible implementations, multiple measurement locations are evenly distributed along the circumference of the annular cut.

[0151] In some possible embodiments, the device further includes:

[0152] The wafer orientation adjustment module is used to adjust the orientation of the wafer to be diced using the calibration workbench, so that the orientation of the wafer to be diced is adjusted to the target orientation, and the wafer to be diced in the target orientation is transferred to the dicing worktable.

[0153] In some possible embodiments, the second cutting table control module 940 includes:

[0154] The cutting control parameter acquisition unit is used to acquire the cutting control parameters when the cutting blade makes an annular cut on the wafer sample. The cutting control parameters include the radius of the annular cut and the rotation direction of the cutting work plate.

[0155] The height information calculation unit is used to calculate the height information of the cutting blade on the Z-axis at each circumferential cutting position in the wafer to be cut, based on the first preset cutting depth value and the cutting depth compensation curve.

[0156] The cutting control unit is used to control the cutting blade to cut the wafer sample based on the height information of the cutting blade on the Z-axis at each circumferential cutting position and the cutting control parameters when the cutting blade makes circumferential cutting of the wafer sample.

[0157] In some possible embodiments, the device further includes:

[0158] The test specimen attitude adjustment module is used to adjust the attitude of the wafer test specimen to the target attitude using the calibration workbench;

[0159] The test sample cutting module is used to control the cutting depth of the wafer test sample after it is transferred to the cutting work tray in the target posture, according to the second preset cutting depth value and the cutting depth compensation curve, so that the cutting blade cuts an annular slit on the wafer test sample.

[0160] The test sample measurement module is used to determine whether the difference between the cut depth values ​​corresponding to the annular cut on the wafer test sample at different measurement positions and the second preset cut depth value is within the target range, based on the cut depth measurement results measured by the cut depth measurement workbench on the annular cut on the wafer test sample.

[0161] The repeat execution module is used to adjust the cutting depth compensation curve based on the cutting depth measurement results measured by the annular notch on the wafer test specimen if the values ​​are not all within the target range. This results in a new cutting depth compensation curve. The new wafer test specimen is then placed on the calibration workbench, and the above steps are repeated until the difference between the cutting depth values ​​corresponding to the annular notch on the wafer test specimen at different measurement positions and the second preset cutting depth value is within the target range. The current cutting depth compensation curve is then used as the final cutting depth compensation curve.

[0162] This disclosure provides an embodiment of a dicing apparatus. Optionally, the dicing apparatus includes a memory for storing processor-executable instructions; a processor configured to execute the executable instructions in the memory to implement the steps of the dicing apparatus control method provided in this disclosure.

[0163] Figure 8 This is a schematic block diagram of a dicing device 110 according to an embodiment of the present invention.

[0164] like Figure 8 As shown, the dicing device 110 may include a dicing apparatus, and the dicing apparatus 110 may further include:

[0165] The system includes a memory 1101 and a processor 1102. The memory 1101 stores computer programs and transfers the program code to the processor 1102. In other words, the processor 1102 can retrieve and run the computer programs from the memory 1101 to implement the methods described in the embodiments of the present invention.

[0166] For example, the processor 1102 can be used to execute the above-described method embodiments according to instructions in the computer program.

[0167] In some embodiments of the present invention, the dicing device 110 may include, but is not limited to:

[0168] General-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0169] In some embodiments of the present invention, the memory 1101 includes, but is not limited to:

[0170] Volatile memory and / or non-volatile memory. Non-volatile memory can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. Volatile memory can be random access memory (RAM), used as an external cache. By way of example, but not limitation, many forms of RAM are available, such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDR SDRAM), Enhanced Synchronous DRAM (ESDRAM), Synchronous Link DRAM (SLDRAM), and Direct Rambus RAM (DR RAM).

[0171] In some embodiments of the present invention, the computer program may be divided into one or more modules, which are stored in the memory 1101 and executed by the processor 1102 to perform the method provided by the present invention. The one or more modules may be a series of computer program instruction segments capable of performing a specific function, which describe the execution process of the computer program in the controller.

[0172] like Figure 8 As shown, the dicing device 110 may further include:

[0173] Transceiver 1103, which can be connected to processor 1102 or memory 1101.

[0174] The processor 1102 can control the transceiver 1103 to communicate with other devices; specifically, it can send information or data to other devices or receive information or data sent by other devices. The transceiver 1103 may include a transmitter and a receiver. The transceiver 1103 may further include antennas, and the number of antennas may be one or more.

[0175] It should be understood that the various components in the dicing equipment are connected through a bus system, which includes a data bus, a power bus, a control bus, and a status signal bus.

[0176] The present invention also provides a computer storage medium having a computer program stored thereon, which, when executed by a computer, enables the computer to perform the methods of the above-described method embodiments. Alternatively, one embodiment of the present invention also provides a computer program product containing instructions that, when executed by a computer, cause the computer to perform the methods of the above-described method embodiments.

[0177] When implemented using software, it can be implemented entirely or partially as a computer program product. This computer program product includes one or more computer instructions. When these computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of the present invention are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another via wired (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium accessible to a computer or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., Digital Video Disc (DVD)), or a semiconductor medium (e.g., Solid State Disk (SSD)).

[0178] Those skilled in the art will recognize that the modules and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0179] In the several embodiments provided by this invention, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or modules may be electrical, mechanical, or other forms.

[0180] The modules described as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. For example, the functional modules in the various embodiments of this application may be integrated into one processing module, or each module may exist physically separately, or two or more modules may be integrated into one module.

[0181] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method for compensating for annular cutting depth, applied to a dicing device, the dicing device comprising a calibration worktable, a cutting work plate, and a cutting depth measurement worktable, characterized in that, The method includes: The wafer sample is used to adjust its orientation using the calibration stage, so that the wafer sample is adjusted to a target orientation; the target orientation is the orientation of the wafer sample when the notch in the wafer sample is moved to the target position. After the wafer sample in the target posture is transferred to the dicing worktable, the dicing blade is controlled to cut the wafer sample that rotates with the dicing worktable, so that the dicing blade cuts an annular slit on the wafer sample. Based on the cutting depth measurement results obtained by the cutting depth measurement worktable for the annular cut, a cutting depth compensation curve is obtained; the cutting depth measurement results include the cutting depth values ​​corresponding to the annular cut at different measurement positions in the wafer sample under the target posture; the cutting depth compensation curve is the correspondence between each annular cut position cut by the cutting blade in the wafer to be cut and the cutting height compensation value; When cutting the wafer to be cut, the cutting depth of the cutting blade is adjusted based on the cutting depth compensation curve.

2. The method for compensating the depth of annular cutting according to claim 1, characterized in that, The step of obtaining the cutting depth compensation curve based on the cutting depth measurement results obtained from the annular incision by the cutting depth measurement workbench includes: For each measurement position, the difference in cutting depth of the annular cut at the measurement position is calculated based on the target cutting depth value and the cutting depth value of the annular cut at the measurement position. Based on the depth difference of the annular incision at each of the measurement positions and the position information corresponding to each measurement position, a depth difference curve is obtained; The cutting depth compensation curve is obtained based on the cutting depth difference curve.

3. The method for compensating the depth of annular cutting according to claim 2, characterized in that, The step of obtaining the cutting depth compensation curve based on the cutting depth difference curve includes: Based on the depth difference curve, determine the depth compensation value corresponding to each of the circumferential cut positions; The cutting depth compensation curve is obtained based on the cutting depth compensation value corresponding to each of the circumferential cutting positions and the position information corresponding to each of the circumferential cutting positions.

4. The method for compensating the depth of annular cutting according to claim 1, characterized in that, The step of adjusting the orientation of the wafer sample using the calibration stage to bring the wafer sample to a target orientation includes: The position of the notch in the wafer sample on the calibration stage is detected to obtain the current position of the notch on the calibration stage; Based on the positional relationship between the current position and the target position, the calibration workbench is controlled to rotate so that the notch moves to the target position as the calibration workbench rotates.

5. The method for compensating the depth of annular cutting according to claim 1, characterized in that, Before obtaining the cutting depth compensation curve based on the cutting depth measurement results obtained from the annular cut by the cutting depth measurement workbench, the process further includes: Multiple measurement positions are determined on the annular cut along its circumference; For each measurement position, the depth of the annular cut is detected at the measurement position using the depth of cut measurement table to obtain the depth value of the annular cut at each measurement position.

6. The method for compensating the depth of annular cutting according to claim 5, characterized in that, The multiple measurement locations are evenly distributed along the circumference of the annular incision.

7. The method for compensating the depth of annular cutting according to claim 1, characterized in that, Before adjusting the cutting depth of the wafer to be cut based on the cutting depth compensation curve during the cutting of the wafer, the method further includes: The orientation of the wafer to be cut is adjusted using the calibration worktable to bring the orientation of the wafer to be cut to the target orientation, and the wafer to be cut in the target orientation is then transferred to the cutting worktable.

8. The method for compensating the depth of annular cutting according to claim 1, characterized in that, The step of adjusting the cutting depth of the wafer to be cut based on the cutting depth compensation curve during the cutting process includes: Obtain the cutting control parameters when the dicing blade makes an annular cut on the wafer sample; the cutting control parameters include the radius of the annular cut and the rotation direction of the cutting work plate; Based on the first preset cutting depth value and the cutting depth compensation curve, calculate the height information of the cutting blade on the Z-axis corresponding to each circumferential cutting position in the wafer to be cut; Based on the height information of the cutting blade on the Z-axis corresponding to each circumferential cutting position, and the cutting control parameters of the cutting blade when circumferentially cutting the wafer sample, the cutting blade is controlled to cut the wafer to be cut.

9. The method for compensating the depth of annular cutting according to claim 1, characterized in that, Before adjusting the cutting depth of the wafer to be cut based on the cutting depth compensation curve during the cutting of the wafer, the method further includes: The orientation of the wafer test specimen is adjusted to the target orientation using the calibration workbench; After the wafer test sample in the target posture is transferred to the dicing worktable, the dicing blade is controlled to adjust the dicing depth of the wafer test sample according to the second preset dicing depth value and the dicing depth compensation curve, so that the dicing blade cuts an annular slit on the wafer test sample. Based on the cutting depth measurement results measured by the cutting depth measurement workbench on the annular cut on the wafer test specimen, it is determined whether the difference between the cutting depth value corresponding to the annular cut on the wafer test specimen at different measurement positions and the second preset cutting depth value is within the target range; If the values ​​are not all within the target range, the cutting depth compensation curve is adjusted based on the cutting depth measurement results obtained from the annular notch on the wafer test specimen to obtain a new cutting depth compensation curve. The new wafer test specimen is then placed on the calibration workbench, and the above steps are repeated until the difference between the cutting depth value corresponding to the annular notch on the wafer test specimen at different measurement positions and the second preset cutting depth value is within the target range. The current cutting depth compensation curve is then used as the final cutting depth compensation curve.

10. A device for compensating for annular cutting depth, applied to a dicing apparatus, the dicing apparatus comprising a calibration worktable, a cutting work plate, and a cutting depth measuring worktable, characterized in that, The device includes: The calibration stage control module is used to adjust the orientation of the wafer sample using the calibration stage, so that the orientation of the wafer sample is adjusted to a target orientation; the target orientation is the orientation of the wafer sample when the notch in the wafer sample moves to the target position; The first cutting stage control module is used to control the cutting blade to cut the wafer sample that rotates with the cutting stage after the wafer sample in the target posture is transferred to the cutting stage, so that the cutting blade cuts an annular slit on the wafer sample. The compensation curve calculation module is used to obtain a cutting depth compensation curve based on the cutting depth measurement results measured by the cutting depth measurement workbench on the annular cut. The cutting depth measurement results include the cutting depth values ​​corresponding to the annular cut at different measurement positions in the wafer sample under the target posture. The cutting depth compensation curve is the correspondence between each annular cut position cut by the cutting blade in the wafer to be cut and the cutting height compensation value. The second cutting stage control module is used to control the cutting blade to adjust the cutting depth of the wafer to be cut based on the cutting depth compensation curve when cutting the wafer to be cut.

11. A dicing device, characterized in that, include: Memory is used to store processor-executable instructions; A processor is configured to execute executable instructions in the memory to implement the steps of the method according to any one of claims 1 to 9.

12. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 9.

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