Precise wafer scribing processing technology based on high-ductility UV film

Abstract

The invention relates to the technical field of semiconductor packaging testing, and discloses a precise wafer scribing processing technology based on a high-ductility UV film, and the processing flow of the technology is as follows: wafer pretreatment and E-160C film adaptation inspection, low-stress back film pasting, fixed wafer scribing, aging cleaning, UV dispergation control and lossless wafer taking. A complete parameter system including pre-constant-temperature treatment, low-tension film pasting, two-step cutting-up, aging cleaning and precise peptizing is constructed, precise regulation and control of the adhesive force from high-viscosity fixation to low-viscosity release can be achieved, based on the parameter system, expensive automatic equipment does not need to be arranged in the machining process, and the machining cost is reduced. The problems of film breakage, silicon powder pollution and incomplete dispergation in the scribing process can be effectively solved, the final comprehensive yield of wafer processing can be maintained at a high level, and the processing cost of a single wafer can be greatly reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging and testing technology, specifically to a wafer precision dicing process based on a highly ductile UV film. Background Technology

[0002] Currently, back-end processing of semiconductor wafers largely relies on fully automated production lines to achieve automated connection and parameter coordination between processes. However, in small-batch, customized R&D scenarios such as scientific research laboratories, universities, and corporate R&D centers, due to limitations in site size, equipment investment costs, and process flexibility requirements, a mode of independent and decentralized equipment configuration is often adopted. Wafer transfer between processes needs to be completed manually, forming a "non-connected" production model. In this mode, existing processes have significant drawbacks: Firstly, general-purpose process parameters are difficult to adapt to the characteristics of specific high-viscosity, high-thickness film materials (such as E-160C), especially for high-ductility UV films. Traditional parameters cannot match their unique stress response and viscosity change patterns, easily leading to film layer breakage during dicing or incomplete separation of residues during the debonding stage. Secondly, manual transport lacks time constraints, and silicon powder generated during dicing easily dries and adheres to the wafer surface before cleaning, causing secondary contamination. Furthermore, due to the lack of a quantitative monitoring mechanism for changes in adhesion before and after UV irradiation, the degree of debonding cannot be accurately judged, often resulting in die cracking during forced wafer removal due to incomplete debonding, severely impacting wafer processing efficiency and yield in the R&D stage. These problems not only restrict the quality stability of precision wafer dicing in the "off-line" mode but also hinder the effective application of high-ductility UV films in R&D scenarios, urgently requiring targeted solutions to issues such as parameter adaptation, process controllability, and yield assurance. Summary of the Invention

[0003] (a) Technical problems to be solved To address the shortcomings of existing technologies, this invention provides a wafer precision dicing process based on a highly ductile UV film. This process offers the advantages of achieving high precision, high yield, and low cost in a non-wired mode. It solves the problems of poor parameter adaptability, lack of process control, and uncertainty in human operation in existing R&D scenarios, such as film breakage, silicon powder contamination, incomplete desizing, and high fragmentation rate.

[0004] (II) Technical Solution

[0005] To achieve the above objectives, the present invention provides the following technical solution: a wafer precision dicing process based on a high-ductility UV film, comprising the following steps: Step 1: Wafer pretreatment and film compatibility check: Clean the surface and calibrate the flatness of the wafer to be processed, select E-160C high-ductility UV film as the backing film, and check the film compatibility. Step 2, Low-stress back-mounting film: Under low-stress conditions, the E-160C high-ductility UV film is laminated to the back of the pretreated wafer; Step 3, Fixing and Dicing the Wafer: The high adhesion properties of the E-160CUV film are used to fix the wafer for dicing, completing the separation of the wafer circuits; Step 4, Time-lapse Cleaning: Perform rapid cleaning on the wafer within a specified time after dicing; Step 5, UV adhesive removal control: The E-160CUV film adhesive layer is deactivated through a photochemical reaction to prepare for non-destructive film removal; Step 6: Non-destructive chip removal and finished product inspection: Remove the desorbed chip from the film and perform appearance and performance spot checks on the finished chip.

[0006] Preferably, in step one, the wafer pretreatment involves plasma cleaning in a Class 100 cleanroom environment, with the cleaning power set to 90-100W and the cleaning time controlled at 45-50s.

[0007] Preferably, the total thickness of the E-160C high-stretch UV film is controlled between 160±0.05μm.

[0008] Preferably, in step two, the low-stress backing film adopts a constant temperature bonding process, controlling the bonding temperature at 25±3℃, the bonding pressure at 0.35-0.45MPa, the bonding speed at 5-7mm / s, and the film tension at 200-300g / cm.

[0009] Preferably, the low-stress backing film in step two needs to be combined with an integrated operation of preliminary preparation, mid-term control, and post-stabilization: (1) Pre-treatment: Before bonding, the E-160CUV film is pre-temperature controlled by placing the film material in a clean environment at 25±3℃ for 30-40 minutes. (2) Mid-term: During the bonding process, a synchronous operation of bonding and venting is adopted, with the venting pressure controlled at 0.1-0.15MPa and the venting speed kept consistent with the bonding speed; (3) Post-processing: After bonding, let stand for 10-15 minutes to allow the film material to fully bond with the wafer surface.

[0010] Preferably, in step three, the wafer dicing speed control is fixed as follows: relying on the initial adhesion characteristics of E-160C, the dicing feed speed is set to 30-50 mm / s, the dicing depth is set to 20%-25% of the total film thickness, and the cooling water flow rate is maintained at ≥2.0 L / min and aligned with the dicing marks.

[0011] Preferably, the wafer dicing in step three adopts a two-step dicing method: the first cut is shallow to a depth of 50%-60% of the wafer thickness, and the second cut cuts through to the set depth.

[0012] Preferably, the time-dependent cleaning in step four includes: the time interval from the end of cutting to the start of cleaning is ≤5 minutes; the cleaning solution is a neutral special cleaning solution with a pH value of 7.5-8.0; the cleaning process combines ultrasonic cleaning and spray cleaning; the ultrasonic power is set to 50-80W; and the cleaning time is controlled at 60-90s. After cleaning, the product is dried with nitrogen gas at 50±5℃ and with a purity greater than 99.99%. QC inspection is performed after cleaning.

[0013] Preferably, the UV debonding control conditions in step five are as follows: a UV irradiation device with a wavelength of 365nm is used, the cumulative radiation energy is set to 200-250mJ / cm², and the irradiation time is controlled at 9-14s.

[0014] Preferably, in step six, the non-destructive tissue removal process is as follows: the tissue removal operation must be carried out in a Class 100 clean environment, the operator wears anti-static gloves and a dust-free mask, and the tissue removal force is controlled at 0.05-0.1N.

[0015] Compared with existing technologies, this invention provides a wafer precision dicing process based on a high-ductility UV film, which has the following advantages: 1. This invention constructs a fully quantified process window for E-160C high-ductility UV films. The process window includes pre-temperature treatment, low-stress film application, two-step scribing, aging cleaning, precise UV debonding control, and non-destructive wafer removal. This enables the processing technology to achieve precise control of adhesion from high-tack fixation (approximately 7.39 N / 25 mm) to low-tack release (approximately 0.15 N / 25 mm). This process effectively solves the problem that traditional general parameters cannot match the special stress response and viscosity change law of high-ductility films, thereby avoiding film layer breakage during processing and cutting and crystal fragmentation during forced wafer removal, and significantly improving wafer processing efficiency and yield in the R&D stage.

[0016] 2. This invention achieves the beneficial effect of systematically avoiding the risks of contamination, delays, and wafer breakage introduced by human operation in a non-continuous mode of manual transfer by setting strict inter-process transfer time (such as the golden window of cleaning within 5 minutes after cutting) and intermediate inspection nodes (such as QC after film application, QC after dicing, QC after cleaning, and QC after degumming). In particular, the constraint on time-based cleaning can effectively prevent secondary contamination caused by the drying and adhesion of silicon powder during processing. The quantitative UV degumming adhesion verification ensures that wafers can be picked up under the best adhesion conditions, thereby ensuring the reproducibility and stability of the processing technology and overcoming the defects of the high randomness of traditional manual operation.

[0017] 3. By optimizing process parameters (such as strictly controlling the film tension below 300g / cm, adopting a two-step scribing method and monitoring the spindle load) and using simple fixtures, this invention achieves the beneficial effect of near-fully automated production line processing quality without configuring an expensive fully automated transfer system. At the same time, its single wafer processing cost is far lower than that of a fully automated production line, only 37.5% of the latter, achieving the best balance between high-precision processing and low operating costs. Attached Figure Description

[0018] Figure 1 This is a flowchart of the processing technology of the present invention. Detailed Implementation

[0019] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0020] Please see Figure 1 The wafer precision dicing process based on high-ductility UV film includes the following steps: Step 1: Wafer pretreatment and film material compatibility inspection: Perform surface cleaning and flatness calibration on the wafer to be processed, select E-160C high-ductility UV film as low-stress backing film (Lamination), and check the consistency of appearance and performance of E-160C high-ductility UV film. Step 2, Low-stress back lamination: Under low-stress conditions, the E-160C high-ductility UV film is laminated onto the back of the pretreated wafer without bubbles. Step 3, Fixing and Dicing the Wafer: The high adhesion properties of the E-160CUV film are used to fix the wafer for dicing, completing the separation of the wafer circuits; Step 4, Time-lapse Cleaning: Perform rapid cleaning on the wafer within a specified time after dicing to remove surface silicon powder and prevent secondary contamination; Step 5, UV adhesive debonding control: The E-160CUV film adhesive layer is deactivated through photochemical reaction, resulting in a sudden drop in viscosity, which prepares for non-destructive film removal; Step Six: Non-destructive chip removal and finished product inspection: The desorbed chip is manually removed from the film using a vacuum pen or anti-static tweezers. The finished chip is then subjected to appearance and performance spot checks, and the entire processing is completed.

[0021] Specifically, in step one, wafer pretreatment involves plasma cleaning in a Class 100 cleanroom environment. The cleaning power is set to 90-100W, and the cleaning time is controlled at 45-50 seconds to remove oil, dust, and other impurities from the wafer surface, ensuring that the water contact angle on the wafer surface is <15°. The film material compatibility check requires confirming that the thickness deviation of the E-160CUV film is within ±5μm and the elongation at break meets the standard of 709%±5%. There should be no defects such as scratches, damage, or bubbles on the film surface to avoid affecting the subsequent bonding and dicing effects due to the quality problems of the film material itself.

[0022] Specifically, the total thickness of the E-160C high-stretch UV film is controlled between 160±0.05μm.

[0023] Specifically, in step two, the low-stress back-attach film is applied using a constant-temperature bonding process. The bonding temperature is controlled at 25±3℃, the bonding pressure at 0.35-0.45MPa, the bonding speed at 5-7mm / s, and the film tension at 200-300g / cm. Because the E-160C film has a high elongation at break of 709%, it is extremely prone to stretching. Therefore, the film tension must be strictly controlled below 300g / cm. When the tension reaches or exceeds 300g / cm, the film layer will undergo elastic shrinkage (snap-back) during subsequent cutting and heating, leading to wafer warping or edge cracking. After bonding, QC inspection is performed. Inspection indicators include: visual inspection (no wrinkles on the film surface, effective area bubble diameter <0.1mm), and edge allowance (the width of the film extending beyond the wafer edge is controlled at 2-3mm, with no curling). This ensures that the wafer is securely fixed during subsequent fixture transport and that the flatness meets the requirements of the cutting machine's vacuum chuck, preventing fragmentation caused by weak suction.

[0024] Specifically, in step two, the low-stress back-bonding film needs to be integrated with the pre-preparation, mid-term control, and post-stabilization operations: (1) Pre-treatment: Before bonding, the E-160CUV film is pre-temperature treated. The film material is placed in a clean environment at 25±3℃ and left to stand for 30-40 minutes to eliminate the internal stress of the film material itself and avoid local wrinkles or bubbles caused by uneven stress of the film material during bonding. (2) Mid-term: During the bonding process, a simultaneous bonding and venting operation is adopted. The venting pressure is controlled at 0.1-0.15MPa, and the venting speed is consistent with the bonding speed to further prevent the generation of air bubbles; (3) Post-bonding: After bonding, let stand for 10-15 minutes to allow the film material to fully bond with the wafer surface, improve the uniformity of adhesion, avoid chip displacement problems caused by insufficient local adhesion during subsequent dicing, and make up for the defects in the existing technology that only focus on bonding parameters and ignore the internal stress of the film material and the stabilization treatment after bonding.

[0025] Specifically, in step three, the wafer dicing speed is controlled as follows: Relying on the high viscosity of the E-160C (initial adhesion of 7.39 N / 25 mm), the dicing feed speed is set to 30-50 mm / s. Increasing the feed speed improves processing efficiency, while the high viscosity effectively resists the scouring force of the cooling water, preventing small-sized chip displacement (Die Shift). The overcut depth is set to 20%-25% (30-40 μm) of the total film thickness. Since the base film thickness reaches 150 μm, this depth is sufficient to cut through the wafer without penetrating the base film. The cooling water flow rate is maintained at ≥2.0 L / min and aligned with the dicing marks. Continuous cooling aligned with the dicing marks prevents excessively high temperatures during dicing, which could soften the film and damage the chip. QC inspection is performed after wafer dicing is completed. Specifically, QC inspection indicators include: backside chipping (measured under a microscope, chipping width must be <30μm) and cut integrity (confirming that the film layer has not been cut through to prevent water leakage from causing a vacuum alarm). The characteristics of high viscosity films are used to reduce edge chipping, while the cutting depth is controlled to protect the stage and extend the equipment life.

[0026] Specifically, step three optimizes the wafer dicing mode and monitors the blade status in real time: a two-step dicing method is adopted, with the first cut shallowly to a depth of 50%-60% of the wafer thickness, and the second cut through to the set depth. This process reduces the single cutting load and monitors the spindle load current in real time during dicing. When the load fluctuation exceeds ±5%, an alarm is automatically triggered and a tool dressing prompt is given. The blade dressing frequency is set to once every 20-25 wafers cut, with a dressing feed speed of 4-5 mm / s and a dressing amount of 0.02-0.03 mm, to ensure that the blade sharpness remains consistent with the cutting process during dicing, thus guaranteeing the final product quality.

[0027] Specifically, in step four, timed cleaning: In manual transfer mode, the time interval between the end of cutting and the start of cleaning is ≤5 minutes. During this period, the silicon powder has not yet physically bonded with the adhesive layer, resulting in the highest cleaning efficiency. If this window is missed, the silicon powder will be permanently embedded in the adhesive layer. The cleaning solution used is a neutral special cleaning solution with a pH of 7.5-8.0. During cleaning, a combination of ultrasonic cleaning and spray cleaning is used, with the ultrasonic power set at 50-80W and the cleaning time controlled at 60-90s. After cleaning, the wafer is dried with nitrogen gas at 50±5℃ and a purity greater than 99.99% to avoid excessive temperature triggering the thermal reaction of the UV adhesive layer (this film is heat-sensitive). QC inspection is still performed after cleaning (based on the Inspection Report). QC inspection indicators include: no impurities on the adhesive surface (Impurity OK) and a surface water contact angle <20° (indicating no organic residue), thereby ensuring that the wafer surface cleanliness meets the requirements for subsequent debonding and wafer removal.

[0028] Specifically, in step five, the UV debonding control conditions are as follows: a UV irradiation device with a wavelength of 365nm is used, the cumulative radiation energy is set to 200-250mJ / cm², and the irradiation time is controlled at 9-14s to ensure that the adhesive layer undergoes a full photochemical reaction; after irradiation, a viscosity conversion verification is required to ensure that the UV film adhesion decreases from the initial 7.39N / 25mm to below 0.15N / 25mm (a reduction of approximately 98%); after debonding, QC inspection is performed, and the QC inspection indicators include: Peel Test (try picking in the waste area at the edge of the wafer, there should be no obvious stringy feeling), and Residue (no rainbow effect on the back of the chip under strong light). The extremely low viscosity of 0.15N is the physical prerequisite for achieving manual non-destructive wafer removal by tweezers or a vacuum pen. If the standard is not met and the wafer is forcibly removed, it will inevitably lead to the breakage of the ultra-thin wafer.

[0029] Specifically, in step six, the non-destructive chip removal process must be carried out in a Class 100 clean environment. Operators must wear anti-static gloves and dust-free masks, and the removal force must be controlled at 0.05-0.1N to avoid excessive force that could damage the chip. Specifically, finished product inspection includes appearance inspection (no chipping, cracks, or adhesive residue), dimensional inspection (chip size deviation < ±2μm), and electrical performance sampling inspection (randomly select 5%-10% of chips to test their conductivity and insulation, with a pass rate of over 98%). After passing inspection, the chips are vacuum-packed and stored in an environment of 20±5℃ and 40%-60% relative humidity to prevent the chips from getting damp or contaminated.

[0030] The above processing technology was applied to the following embodiments, and a comparative test was conducted on the traditional general UV film processing technology as a reference group, as follows: Example

[0031] The complete process of this invention is as follows: Step 1: Plasma cleaning (power 95W, duration 48s) → Step 2: Low-stress backing film (bonding temperature 25℃, pressure 0.40MPa, speed 6mm / s, tension 250g / cm, pre-temperature constant temperature 35min, post-bonding resting 12min) → Step 3: Wafer dicing (feed speed 40mm / s, cutting depth 35μm, two-step dicing method, cooling water flow rate 2.2L / min) → Step 4: Aging cleaning (cleaning starts 4 minutes after dicing, ultrasonic power 65W, duration 75s) → Step 5: UV adhesive removal (radiation energy 230mJ / cm², duration 11s) → Step 6: Non-destructive wafer removal (removal force 0.08N). Example

[0032] Using the process of this invention, the film tension in step two is adjusted to 280 g / cm (close to the upper limit), and the other parameters are the same as in Example 1, to verify the effect of critical tension control on the yield. Example

[0033] Using the process of this invention, the feed rate in step three is increased to 45 mm / s, and the other parameters are the same as in Example 1, to verify the process stability under high feed rate. Example

[0034] Using the process of this invention, the cleaning step four is delayed to 6 minutes (exceeding the golden 5-minute window), while the other parameters are the same as in Example 1, verifying the criticality of time-sensitive cleaning.

[0035] Comparative Example 1 The process uses a traditional general-purpose UV film (not E-160C specific): film tension 400g / cm, no pre-temperature treatment, no post-lamination rest, feed speed 25mm / s, single-blade cutting, cleaning delay 10 minutes, UV radiation energy 300mJ / cm² (overexposure).

[0036] Comparative Example 2 The E-160C film was used, but the key control points of this invention were ignored: no pre-temperature control treatment, no standing time after bonding, single-blade cutting, no spindle load monitoring, cleaning delay of 8 minutes, and UV radiation energy of 180mJ / cm² (underexposure).

[0037] Comparative Example 3 The fully automated production line process (as an industrial control) was adopted: a fully automatic film applicator (tension 350g / cm, no pre-temperature control), automatic transfer (cleaning delay <1 minute), and automatic adhesive removal (radiation energy 250mJ / cm²). The equivalence of the non-linear mode of the present invention was verified by comparison.

[0038] Comparative Example 4 Traditional manual operation (without parameter control): the film tension is set based on experience, there is no temperature control, no time constraint, the UV debonding time is judged by visual inspection, and the film picking force is not controlled.

[0039] The processing techniques of the examples and comparative examples were tested at various stages, and the test data are shown in Table 1 below: Table 1 Comparison of process performance between each embodiment and the comparative example

[0040] As can be seen from the data in Table 1, the overall yield of Example 1 of the present invention reached 98.2%, which is much higher than that of Comparative Examples 1 to 4 of the traditional process, and the cost is moderate. The yields of Examples 2 and 3 decreased slightly, but were still better than most of the comparative examples. The yield of Example 4 dropped to 92.3% due to cleaning delay, which confirms the importance of time-sensitive cleaning in the process of the present invention. Comparative Example 3 had the highest yield of fully automated production line, but the cost increased significantly. Comparative Example 4 had the lowest yield of manual operation.

[0041] In summary, through comparative analysis of the embodiments and comparative examples, it has been verified that the processing technology of the present invention, for E-160C high-stretch UV film, establishes a fully quantitative process window from high-viscosity fixation to low-viscosity release, specifically manifested as follows: (1) Based on the characteristics of E-160C membrane material, a complete parameter system including pre-temperature control, low-tension film application, two-step cutting, time-effect cleaning and precise degumming was constructed to achieve precise control of adhesion from high adhesion fixation (about 7.39N) to low adhesion release (about 0.15N), quantifying the process window and effectively solving the problems of blind parameter setting and yield fluctuation under laboratory conditions.

[0042] (2) By setting strict inter-process transfer time (such as the golden 5-minute cleaning window) and intermediate inspection nodes, the risks of contamination, delay and fragmentation introduced by human operation are systematically avoided in the non-connected operation mode, thereby overcoming human defects and ensuring process reproducibility and stability.

[0043] (3) Without configuring an expensive automatic transfer system, the processing quality (overall yield of 98.2%) is achieved between individual equipment by optimizing process parameters and coordinating fixtures. The processing cost of a single wafer is only 37.5% of that of a fully automatic production line, achieving the best balance between high-precision processing and low operating costs in the process of this invention, resulting in significant cost benefits.

[0044] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A wafer precision dicing process based on a high-ductility UV film, characterized in that, Includes the following steps: Step 1: Wafer pretreatment and film compatibility check: Clean the surface and calibrate the flatness of the wafer to be processed, select E-160C high-ductility UV film as the backing film, and check the film compatibility. Step 2, Low-stress back-mounting film: Under low-stress conditions, the E-160C high-ductility UV film is laminated to the back of the pretreated wafer; Step 3, Fixing and Dicing the Wafer: The high adhesion properties of the E-160CUV film are used to fix the wafer for dicing, completing the separation of the wafer circuits; Step 4, Time-lapse Cleaning: Perform rapid cleaning on the wafer within a specified time after dicing; Step 5, UV adhesive removal control: The E-160CUV film adhesive layer is deactivated through a photochemical reaction to prepare for non-destructive film removal; Step 6: Non-destructive chip removal and finished product inspection: Remove the desorbed chip from the film and perform appearance and performance spot checks on the finished chip.

2. The wafer precision dicing process based on a high-ductility UV film according to claim 1, characterized in that, In step one, the wafer pretreatment involves plasma cleaning in a Class 100 cleanroom environment, with the cleaning power set to 90-100W and the cleaning time controlled at 45-50 seconds.

3. The wafer precision dicing process based on a high-ductility UV film according to claim 2, characterized in that, The total thickness of the E-160C high-strength UV film is controlled between 160±0.05μm.

4. The wafer precision dicing process based on a high-ductility UV film according to claim 1, characterized in that, In step two, the low-stress backing film is applied using a constant-temperature bonding process, with the bonding temperature controlled at 25±3℃, the bonding pressure at 0.35-0.45MPa, the bonding speed at 5-7mm / s, and the film tension set at 200-300g / cm.

5. The wafer precision dicing process based on a high-ductility UV film according to claim 1, characterized in that, In step two, the low-stress back-bonding film needs to be combined with an integrated operation encompassing preliminary preparation, mid-term control, and post-stabilization: (1) Pre-treatment: Before bonding, the E-160CUV film is pre-temperature controlled by placing the film material in a clean environment at 25±3℃ for 30-40 minutes. (2) Mid-term: During the bonding process, a synchronous operation of bonding and venting is adopted, with the venting pressure controlled at 0.1-0.15MPa and the venting speed kept consistent with the bonding speed; (3) Post-processing: After bonding, let stand for 10-15 minutes to allow the film material to fully bond with the wafer surface.

6. The wafer precision dicing process based on a high-ductility UV film according to claim 1, characterized in that, In step three, the wafer dicing speed is controlled as follows: based on the initial adhesion characteristics of E-160C, the dicing feed speed is set to 30-50 mm / s, the dicing depth is set to 20%-25% of the total film thickness, and the cooling water flow rate is kept ≥2.0 L / min and aligned with the dicing marks.

7. The wafer precision dicing process based on a high-ductility UV film according to claim 1, characterized in that, In step three, the wafer dicing adopts a two-step dicing method: the first cut is shallow to a depth of 50%-60% of the wafer thickness, and the second cut cuts through to the set depth.

8. The wafer precision dicing process based on a high-ductility UV film according to claim 1, characterized in that, The time-dependent cleaning in step four includes: the time interval from the end of cutting to the start of cleaning is ≤5 minutes; the cleaning solution is a neutral special cleaning solution with a pH value of 7.5-8.0; the cleaning process combines ultrasonic cleaning and spray cleaning; the ultrasonic power is set to 50-80W; and the cleaning time is controlled at 60-90s. After cleaning, the product is dried with nitrogen gas at 50±5℃ and with a purity greater than 99.99%. QC inspection is performed after cleaning.

9. The wafer precision dicing process based on a high-ductility UV film according to claim 1, characterized in that, The UV debonding control conditions in step five are as follows: a UV irradiation device with a wavelength of 365nm is used, the cumulative radiation energy is set to 200-250mJ / cm², and the irradiation time is controlled at 9-14s.

10. The wafer precision dicing process based on a high-ductility UV film according to claim 1, characterized in that, The non-destructive tissue removal process in step six: The tissue removal operation must be carried out in a Class 100 clean environment. The operator must wear anti-static gloves and a dust-free mask, and the force applied during tissue removal must be controlled between 0.05-0.1N.

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