Device state diagnosis method and system based on temperature characteristics

Abstract

The invention provides a device state diagnosis method and system based on temperature characteristics, and relates to the technical field of semiconductor device detection. The method comprises the following steps: loading a preset current through a specified power analyzer, and measuring forward voltage drop data of the semiconductor device under different temperature conditions; analyzing the forward pressure drop data of different temperature points, and drawing a temperature characteristic curve of the forward pressure drop data and the temperature; and performing device state diagnosis on the to-be-diagnosed device once every time the drawing of the temperature characteristic curve is executed, so as to obtain a diagnosis state result. According to the method, the degradation type can be accurately judged by utilizing the opposite trend of bipolar degradation and bonding wire aging and matching with the temperature characteristic change trend.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor device detection, in particular to a device state diagnosis method and system based on temperature characteristics. BACKGROUND

[0002] Silicon carbide MOSFETs are faced with complex electro-thermal-mechanical multi-stress coupling in actual working conditions, causing multi-mechanism compound chip-packaging aging, which seriously restricts the reliability of the device. Therefore, it is necessary to establish an accelerated life test that actively understands the long-term running reliability of the device and meets the actual working conditions, and the aging state of the device is evaluated every certain period of time during the test to explore the aging characteristic evolution law of the device under long-term running. However, it is difficult to decouple the compound aging characteristics of the device under complex stress, and there is no standard method for decoupling the compound aging characteristics considering gate voltage aging, packaging aging and bipolar degradation.

[0003] At present, the research on decoupling characterization of compound aging characteristics mainly focuses on the decoupling of gate oxide aging and bonding wire aging. In the prior art method, a decoupling method is proposed by adjusting the channel resistance ratio of the gate voltage to distinguish the decoupling of gate oxide aging and bonding wire aging, but the interference of bipolar degradation is not considered.

[0004] In summary, there is no research on the decoupling characterization method of bipolar degradation and bonding wire aging, and how to accurately separate bipolar degradation and bonding wire aging under compound stress is still a key challenge in the reliability research of silicon carbide MOSFETs.

[0005] Therefore, it is necessary to provide a new device state diagnosis method and system based on temperature characteristics to solve the above problems. SUMMARY

[0006] The present application is aimed at the technical problems in the prior art that the V SD It is difficult to control the environment, and different degradation mechanisms such as bipolar degradation of body diode and bonding wire aging cannot be accurately distinguished, which leads to inaccurate diagnosis results and affects the evaluation of device reliability. A device state diagnosis method and system based on temperature characteristics are provided.

[0007] To achieve the above-mentioned purpose, the technical solutions adopted by the present application are as follows:

[0008] The present application provides a device state diagnosis method based on temperature characteristics, comprising: analyzing the forward voltage drop data of the semiconductor device under different temperature conditions by loading a preset current through a specified power analyzer; analyzing the forward voltage drop data at different temperature points, and drawing a temperature characteristic curve of the forward voltage drop data and temperature; and performing device state diagnosis on the device to be diagnosed once every time the temperature characteristic curve is drawn to obtain a diagnosis state result.

[0009] The second aspect of the present application provides a device state diagnosis system based on temperature characteristics, which adopts the device state diagnosis method based on temperature characteristics according to the first aspect of the present application, and the device state diagnosis system comprises: a measurement module, which measures the forward voltage drop data of a semiconductor device under different temperature conditions by loading a preset current through a specified power analyzer; an analysis and drawing module, which is used for analyzing the forward voltage drop data at different temperature points and drawing a temperature characteristic curve of the forward voltage drop data and temperature; and a diagnosis processing module, which performs device state diagnosis on a device to be diagnosed once for each time of drawing of the temperature characteristic curve, so as to obtain a diagnosis state result.

[0010] The third aspect of the present application provides an electronic device, comprising: one or more processors; a storage device used for storing one or more programs; and when the one or more programs are executed by the one or more processors, the one or more processors implement the device state diagnosis method based on temperature characteristics according to the first aspect of the present application.

[0011] The fourth aspect of the present application provides a computer readable medium, which stores a computer program, and the computer program is executed by a processor to implement the device state diagnosis method based on temperature characteristics according to the first aspect of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a step flow chart of an example of the device state diagnosis method based on temperature characteristics of the present application;

[0013] Figure 2 is a schematic diagram of occurrence of bipolar degradation of a body diode in an application example of the device state diagnosis method based on temperature characteristics of the present application;

[0014] Figure 3 is a schematic diagram of occurrence of device wire bonding aging in an application example of the device state diagnosis method based on temperature characteristics of the present application;

[0015] Figure 4 is a structural block diagram of the device state diagnosis system based on temperature characteristics of the present application;

[0016] Figure 5 is a structural schematic diagram of an electronic device embodiment according to the present application;

[0017] Figure 6 is a structural schematic diagram of a computer readable medium embodiment according to the present application. DETAILED DESCRIPTION

[0018] The application will be further described below with reference to the drawings. The following examples are only used to more clearly illustrate the technical solutions of the application, and cannot be used to limit the protection scope of the application. It should be pointed out that the following detailed description is exemplary and is intended to provide further description of the present application.

[0019] In view of the above problems, the application provides a device state diagnosis method based on temperature characteristics, which utilizes the opposite trends of bipolar degradation and bonding wire aging, and cooperates with the temperature characteristic change trend, so as to accurately determine the degradation type; according to the continuous process (ΔV SD gradual change characteristics) of bipolar degradation and the step process (ΔV SD sudden change characteristics) of bonding wire aging, the type of mechanism is determined.

[0020] It should be noted that the method of the application is widely applicable, and is particularly suitable for semiconductor devices, such as metal-oxide-semiconductor field effect transistors (also referred to as MOSFETs), such as silicon carbide MOSFETs (Silicon Carbide MOSFETs) and the like.

[0021] Example 1

[0022] Figure 1 A step flow chart of an example of the device state diagnosis method based on temperature characteristics of the application.

[0023] Referring to Figures 1 to 3 , the device state diagnosis method of the application will be specifically described below.

[0024] Firstly, in step S101, by specifying a power analyzer, a preset current is loaded, and the forward voltage drop data of the semiconductor device under different temperature conditions is measured.

[0025] The specified power analyzer is used to perform an accelerated aging test on the to-be-tested device, and the voltage drop value V SD of the to-be-tested device under V GS =-8V and I SD =20A is specifically measured.

[0026] The to-be-tested device includes semiconductor devices, such as metal-oxide-semiconductor field effect transistors (also referred to as MOSFETs), such as silicon carbide MOSFETs (Silicon Carbide MOSFETs).

[0027] The to-be-tested device is subjected to an accelerated aging test, and the aging test is performed under the third quadrant working condition.

[0028] It should be noted that the accelerated aging test refers to the alternating power cycle test, in which the device can work in the first quadrant or the third quadrant. The present application decouples the evaluation of the body diode bipolar degradation and the bonding wire aging of the device during the alternating power cycle test, and recalibrates the temperature characteristic curve for the junction temperature monitoring. In the measurement process of the voltage drop V SD , the device works in the third quadrant.

[0029] In the current and voltage characteristic curve coordinate system to be measured, the first quadrant is forward conduction, the second quadrant is reverse blocking and body diode forward conduction, the third quadrant is reverse conduction, and the fourth quadrant is forward blocking, body diode reverse recovery or reverse blocking.

[0030] In the present application, a heating table is used to control the temperature of the device to be measured, and the gate, drain and source terminals of the device to be measured are all connected to the test fixture. In the third quadrant working condition, a negative voltage (V GS =-8V) is applied to the gate to close the MOSFET channel, and a target current (I SD =20A) is loaded, and the forward voltage drop between the source and the drain is measured through the test fixture. By connecting the gate, drain and source terminals of the device to be measured to the test fixture, the accurate acquisition of the measurement signal and the controllable temperature can be ensured.

[0031] It should be noted that, since V SD needs to be measured at different temperatures, it is difficult to control the temperature of the device to be measured by directly inserting it into the test fixture for testing. Therefore, the device to be measured is placed in a controllable temperature environment by using a heating table, and the accurate measurement of the voltage drop value of the device to be measured at different temperatures is realized by controlling the temperature of the heating table.

[0032] In the electrical, thermal and mechanical stress test environment, a specified range of preset gate voltage and preset body diode forward current is loaded, and the forward voltage drop data of the semiconductor device in the temperature range of 30℃-150℃ is measured.

[0033] Alternatively, the specified range of the preset gate voltage is -4V to -8V, and the specified range of the preset body diode forward current is 18A-22A. For example, the preset gate voltage is -8V and the preset body diode forward current is 20A.

[0034] For example, different temperature points (such as 25℃, 50℃, 75℃, 100℃, etc.) of the heating table are set, and after the temperature is stabilized, the corresponding voltage drop data is measured, and the V SD values at different temperatures are recorded. Each set temperature point is heated and stabilized for not less than 5 minutes to make the junction temperature of the device fully uniform and avoid measurement errors.

[0035] A fixed negative gate voltage (for example, -8V) is applied to ensure that the MOSFET channel is fully closed, and the current path is turned off. Thus, the measured V SD value is only the forward voltage drop of the body diode, and the influence of the channel conduction is excluded.

[0036] When the forward voltage drop data of the semiconductor device is measured for the first time, the initial forward voltage drop difference is calculated.

[0037] It should be noted that the above is only described as an optional example and cannot be understood as a limitation of the present application.

[0038] Next, in step S102, the forward voltage drop data at different temperature points is analyzed, and a temperature characteristic curve of the forward voltage drop data and temperature is drawn.

[0039] After the forward voltage drop data of the semiconductor device is measured for the first time, the accelerated aging process is monitored during the power cycle process;

[0040] After the junction temperature experiences a specified number of cycles (specified number of power cycles) of rising from room temperature to the maximum junction temperature and then decreasing back to room temperature during the power cycle process, a calculation parameter is executed to draw a temperature characteristic curve: the forward voltage drop change of the semiconductor device is calculated to draw a temperature characteristic curve of the forward voltage drop data and temperature, and the drawn temperature characteristic curve is added to the curve set. The specified number is 800-1100, preferably 1000.

[0041] The current voltage drop change corresponding to the current point of the semiconductor device is calculated using the following expression:

[0042] ΔV SD = V SD_aged -V SD0

[0043] Where ΔV SD represents the current voltage drop change corresponding to the current point; V SD_aged represents the current voltage drop value corresponding to the current point; V SD0 represents the previous voltage drop value corresponding to the previous time point, wherein for body diode bipolar degradation, the previous voltage drop value is determined based on the current, the change in drift region resistance, and the temperature; for device wire bonding aging, the previous voltage drop value is determined based on the current, the change in wire resistance, and the temperature.

[0044] When the power cycle is specified, the new V SD temperature characteristic curve is measured, which is used as the new junction temperature monitoring V SD temperature curve. At the same time, ΔV SD temperature characteristic curve is calculated, which is used to evaluate the aging of the body diode and the wire of the device.

[0045] The specific number of times includes 1000 times.

[0046] Thus, the V SD temperature curve calibration can improve the accuracy of junction temperature measurement.

[0047] It should be noted that the V SD junction temperature monitoring is because the V SD changes with the junction temperature, so each junction temperature corresponds to a V SD value, by measuring the size of V SD can know how much the junction temperature is. But when the device is aging (especially body diode bipolar degradation), V SD will change, the V SD value corresponding to each junction temperature will change, so you need to re-measure the V SD temperature curve.

[0048] Next, in step S103, after performing the temperature characteristic curve drawing once, the device state diagnosis is performed on the device to be diagnosed to obtain the diagnosis state result.

[0049] After performing the temperature characteristic curve drawing once, the device state diagnosis is performed on the device to be diagnosed.

[0050] When it is judged that the value corresponding to the current point has changed, the pressure drop change amount calculation is performed, wherein,

[0051] The following expression is used to calculate the pressure drop change amount when the body diode is forwardly turned on when the semiconductor field effect transistor works in the third quadrant, the gate applies negative voltage to turn off, and no current flows through the channel:

[0052] ΔV SD_BD = V SD_BDaged -V SD0_BD

[0053] Wherein, ΔV SD_BD represents the current pressure drop change amount corresponding to the current state after the body diode bipolar degradation occurs; V SD_BDaged represents the current pressure drop value corresponding to the current time point after the body diode bipolar degradation occurs; V SD0_BD represents the previous pressure drop value corresponding to the previous time point before the body diode bipolar degradation occurs.

[0054] For the body diode bipolar degradation, the pressure drop value when the body diode is forwardly turned on when the semiconductor field effect transistor works in the third quadrant, the gate applies negative voltage to turn off, and no current flows through the channel, the following expression is used to represent the previous pressure drop value corresponding to the previous time point before the body diode bipolar degradation occurs:

[0055] VSD_BDaged =I×ΔR D

[0056] Among them, V SD_BDaged ΔR represents the current voltage drop at the current time point after bipolar degradation of the body diode has occurred; I represents the forward conduction current of the body diode at the current time point; ΔR D This indicates the change in resistance in the drift region under the current condition.

[0057] In this example, the forward conduction current of the body diode can be set to a constant current.

[0058] By shutting down the channel with negative gate voltage, V can be effectively ensured. SD It only reflects the characteristics of the body diode and is not affected by gate oxide degradation.

[0059] For the change in drift region resistance ΔR under the current state D Specifically, this is expressed as the current drift region resistance minus the initial drift region resistance.

[0060] For device bond wire aging, the previous voltage drop value is determined based on the change in current, bond wire resistance, and temperature.

[0061] Specifically, bond wire detachment, root cracking, and internal voids will directly lead to R package Positive offset, ΔV SD It will be represented as ΔV SD_PD The details are as follows:

[0062] ΔV SD_PD =V SD_PD -V SD0_PD

[0063] =I×ΔR package

[0064] Where, ΔV SD_PD This represents the change in voltage drop corresponding to the current state after bond wire aging; V SD_PD This represents the voltage drop at the current time point after package aging has occurred; V SD0 This represents the voltage drop at the previous time point before bond wire aging occurs. With the forward conduction current I of the body diode remaining constant, ΔV... SD The magnitude is only related to the bond wire resistance R package The change ΔR package Related to ΔR. package That is, the change in the resistance of the bonded wire.

[0065] Specifically, the temperature characteristic curve plotted at the current time point is compared with the temperature characteristic curve plotted at the previous time point to determine whether bipolar degradation of the body diode or aging of the device bonding wire has occurred.

[0066] When the temperature characteristic curve plotted at the current time point is observed to gradually increase and the slope of the temperature characteristic curve is negative, it is determined that bipolar degradation of the body diode has occurred. See details below. Figure 2 .

[0067] When the temperature characteristic curve plotted at the current time point is detected to suddenly increase at the current point and the slope of the temperature characteristic curve is positive, it is determined that bonding wire aging has occurred. See details below. Figure 3 .

[0068] Based on the fact that bipolar degradation is a continuous process, gradual or abrupt characteristics (i.e., the pressure drop changes corresponding to the two degradation types) are determined. By comparing the temperature characteristic curve plotted at the current time point with that plotted at the previous time point, the threshold ranges of the two aging types can be determined. Combining gradual and abrupt characteristics, the direction of the temperature slope and the step size of change can be further determined, thereby effectively assisting in the automatic identification of degradation types.

[0069] It should be noted that the above is only an optional example and should not be construed as a limitation of the present invention.

[0070] Compared with existing technologies, this invention utilizes the opposite trends of bipolar degradation and bond line aging, combined with the temperature characteristic change trend, to accurately determine the degradation type; and determines the gradual characteristic (i.e., the abrupt change characteristic ΔV) based on the fact that bipolar degradation is a continuous process. SD Bond wire aging is a step process (ΔV) SD (Mutation characteristics) can effectively assist in determining the type of degradation. By turning off the channel with a negative gate voltage, V is ensured. SD It only reflects the characteristics of the body diode and is not affected by gate oxide degradation; V is completed simultaneously in accelerated aging tests. SD Temperature profile calibration improves junction temperature measurement accuracy.

[0071] Example 2

[0072] The following are system embodiments of the present invention, which can be used to execute the method embodiments of the present invention. For details not disclosed in the system embodiments of the present invention, please refer to the method embodiments of the present invention.

[0073] Figure 4 This is a schematic diagram of an example of a device condition diagnostic system based on temperature characteristics according to the present invention.

[0074] The following will refer to Figure 4 The device condition diagnostic system 400 is described below. The device condition diagnostic system 400 executes the device condition diagnostic method based on temperature characteristics as described in Embodiment 1 of the present invention.

[0075] The device state diagnosis system 400 comprises a measurement module 410, an analysis and plotting module 420, and a diagnosis processing module 430.

[0076] In one embodiment, the measurement module 410 measures the forward voltage drop data of the semiconductor device under different temperature conditions by loading a preset current through a designated power analyzer. The analysis and plotting module 420 analyzes the forward voltage drop data at different temperature points and plots the temperature characteristic curve of the forward voltage drop data and temperature. The diagnosis processing module 430 performs device state diagnosis on the device to be diagnosed once for each plotting of the temperature characteristic curve to obtain a diagnosis state result.

[0077] The measurement of the forward voltage drop data of the semiconductor device under different temperature conditions by loading a preset current through a designated power analyzer comprises loading a preset gate voltage in a specified range and a preset body diode forward current in a specified range under an electrical and thermal stress test environment, and measuring the forward voltage drop data of the semiconductor device in a temperature range of 30°C to 150°C, wherein the specified range of the preset gate voltage is -4V to -8V, and the specified range of the preset body diode forward current is 18A to 22A.

[0078] When measuring the forward voltage drop data of the semiconductor device for the first time, an initial forward voltage drop difference is calculated.

[0079] According to an optional embodiment, the analysis of the forward voltage drop data at different temperature points and the plotting of the temperature characteristic curve of the forward voltage drop data and temperature comprise monitoring an accelerated aging process during a power cycle after measuring the forward voltage drop data of the semiconductor device for the first time.

[0080] After the junction temperature experiences a specified number of cycles of rising from room temperature to a maximum junction temperature and then decreasing back to room temperature during the power cycle, a parameter is calculated for plotting the temperature characteristic curve: specifically, the forward voltage drop variation of the semiconductor device is calculated for plotting the temperature characteristic curve of the forward voltage drop data and temperature, and the plotted temperature characteristic curve is added to a curve set; the specified number of cycles is 800 to 1100.

[0081] According to an optional embodiment, the temperature characteristic curve plotted at a current time point is compared with the temperature characteristic curve plotted at a previous time point to determine whether body diode bipolar degradation or device wire bonding aging has occurred.

[0082] According to an optional embodiment, when it is monitored that the temperature characteristic curve plotted at the current time point gradually increases and the slope of the temperature characteristic curve is negative, it is determined that body diode bipolar degradation has occurred.

[0083] According to an optional embodiment, when it is monitored that the temperature characteristic curve drawn at the current time point suddenly increases at the current point and the slope of the temperature characteristic curve is positive, it is determined that the device wire bonding aging occurs.

[0084] According to an optional embodiment, when it is judged that the value corresponding to the current point changes, the pressure drop change amount calculation is performed, wherein the following expression is used to calculate the current pressure drop change amount corresponding to the current point:

[0085] ΔV SD = V SD_aged -V SD0

[0086] Wherein, ΔV SD represents the current pressure drop change amount corresponding to the current point; V SD_aged represents the current pressure drop value corresponding to the current point; V SD0 represents the last pressure drop value corresponding to the last time point, wherein for the body diode bipolar degradation, the last pressure drop value is determined based on the current, the change amount of the drift region resistance and the temperature; for the device wire bonding aging, the last pressure drop value is determined based on the current, the change amount of the wire bonding resistance and the temperature.

[0087] According to an optional embodiment, when the power cycle is measured for a specific number of times, a new V SD temperature characteristic curve is measured, which is used as a new junction temperature monitoring V SD temperature curve. At the same time, ΔV SD temperature characteristic curve is calculated, which is used to evaluate the aging of the body diode and the wire bonding of the device, and the specific number of times includes 1000 times.

[0088] It should be noted that the temperature characteristic-based device state diagnosis method performed by the temperature characteristic-based device state diagnosis system of Figure 4 is substantially the same as the temperature characteristic-based device state diagnosis method in the example of Figure 1 , therefore, the description of the same part is omitted.

[0089] Figure 5 is a structural schematic diagram of an electronic equipment embodiment according to the present application.

[0090] As shown in Figure 5 , the electronic equipment is in the form of a general-purpose computing device. The processor can be one or multiple and work cooperatively. The present application also does not exclude distributed processing, i.e. the processor can be dispersed in different physical devices. The electronic equipment of the present application is not limited to a single entity, but can also be the sum of multiple physical devices.

[0091] The memory stores computer executable programs, usually machine readable codes. The computer readable programs can be executed by the processor to enable the electronic device to perform the method of the present application, or at least part of the steps in the method.

[0092] The memory includes volatile memory, such as random access memory (RAM) and / or cache memory, and / or non-volatile memory, such as read only memory (ROM).

[0093] Optionally, the electronic device further comprises an I / O interface for data exchange between the electronic device and external devices. The I / O interface can be one or more of several types of bus structures, including memory bus or memory bus controller, peripheral bus, graphics acceleration port, processing unit, or local bus using any of the bus structures.

[0094] It should be understood that Figure 6 The electronic device shown is only an example of the present application, and the electronic device of the present application can further comprise elements or components not shown in the above examples. For example, some electronic devices further comprise display units such as display screens, and some electronic devices further comprise human-computer interaction elements such as buttons and keyboards. As long as the electronic device can execute the computer readable programs in the memory to realize the method of the present application or at least part of the steps in the method, it can be considered as an electronic device covered by the present application.

[0095] From the above description of the embodiments, those skilled in the art can easily understand that the example embodiments described herein can be implemented by software, or by software combined with necessary hardware. Therefore, the technical solutions according to the embodiments of the present application can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (which can be a CD-ROM, U disk, mobile hard disk, etc.) or network, and includes a number of commands to make a computing device (which can be a personal computer, server, or network device, etc.) execute the above-mentioned method according to the embodiments of the present application.

[0096] The software product can employ any combination of one or more computer readable media. The computer readable media can be a computer readable signal medium or a computer readable storage medium. The computer readable storage medium can, for example, be, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples (a non-exhaustive list) of the computer readable storage medium include an electrical connection having one or more wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0097] The computer readable storage medium can include a computer-readable medium in the form of a data signal embodied in a carrier wave, wherein the data signal modulates an electromagnetic wave, a magnetic field, or other transport mechanism. The computer readable storage medium can also include any computer-readable medium excluding a transitory, propagating signal per se.

[0098] The program code can be executed by one or more programmable processors, which can be individually, or within a group, a microprocessor, a microcontroller, a graphics processing unit (GPU), a central processing unit (CPU), an application specific integrated circuit (ASIC), an field programmable gate array (FPGA), or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described in the specification or with the aid of the software.

[0099] The computer readable medium described above can bear one or more programs, which, when executed by the device, enable the computer readable medium to implement the data interaction method of the present disclosure.

[0100] Those skilled in the art can understand that the above-mentioned modules can be distributed in the device according to the description of the embodiments, and can also be changed in one or more devices different from the embodiments. The modules of the above-mentioned embodiments can be combined into one module, or further split into multiple sub-modules.

[0101] Through the above description of the embodiments, those skilled in the art can easily understand that the example embodiments described herein can be implemented by software, or by software combined with necessary hardware. Therefore, the technical solutions according to the embodiments of the present application can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (which can be a CD-ROM, a U disk, a mobile hard disk, etc.) or a network, and includes a plurality of commands to make a computing device (which can be a personal computer, a server, a mobile terminal, or a network device, etc.) execute the method according to the embodiments of the present application.

[0102] It should be noted that the above detailed description is exemplary and is intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as understood by those skilled in the art to which the present application belongs.

[0103] In the above detailed description, reference is made to the accompanying drawings, which form a part hereof. In the drawings, similar symbols typically identify similar components, unless context dictates otherwise. The illustrative embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments can be used, and other changes can be made, without departing from the spirit or scope of the subject matter presented herein

[0104] Finally, it should be noted that the above is only used to illustrate the technical solutions of the present application, and is not a limitation on the protection scope of the present application. Simple modifications or equivalent replacements of the technical solutions of the present application made by those skilled in the art do not deviate from the spirit and scope of the present application.

Claims

1. A device state diagnosis method based on temperature characteristics, characterized by, The method comprises the following steps: By specifying the power analyzer, loading the preset current, measuring the forward voltage drop data of the semiconductor device under different temperature conditions; Analyzing the forward voltage drop data at different temperature points, and drawing the temperature characteristic curve of the forward voltage drop data and temperature; Each time the drawing of the temperature characteristic curve is performed, the device state diagnosis of the to-be-diagnosed device is performed once to obtain the diagnosis state result.

2. The method according to claim 1, wherein The method comprises the following steps: In the electrical and thermal stress test environment, a specified range of preset gate voltage and preset body diode forward current is loaded, and the forward voltage drop data of the semiconductor device in the temperature range of 30-150℃ is measured, the specified range of the preset gate voltage is-4V to-8V, and the specified range of the preset body diode forward current is 18A to 22A; When the forward voltage drop data of the semiconductor device is measured for the first time, the initial forward voltage drop difference is calculated.

3. The device state diagnosis method based on temperature characteristics according to claim 1 or 2, characterized by, The method comprises the following steps: After the forward voltage drop data of the semiconductor device is measured for the first time, the accelerated aging process is monitored in the power cycle process; After the junction temperature experiences a specified number of cycles from room temperature to maximum junction temperature and then back to room temperature in the power cycle process, the parameter calculation is performed once to draw the temperature characteristic curve: the forward voltage drop change of the semiconductor device is calculated to draw the temperature characteristic curve of the forward voltage drop data and temperature, and the drawn temperature characteristic curve is added to the curve set; the specified number of cycles is 800 to 1100.

4. The method according to claim 3, wherein The method comprises the following steps: The temperature characteristic curve drawn at the current time point is compared with the temperature characteristic curve drawn at the last time point to determine whether the body diode bipolar degradation or the device wire bonding aging occurs.

5. The device state diagnosis method based on temperature characteristics according to claim 4, wherein When it is monitored that the temperature characteristic curve drawn at the current time point gradually increases and the slope of the temperature characteristic curve is negative, it is determined that the body diode bipolar degradation occurs.

6. The method of claim 4, wherein, The method comprises the following steps: When it is monitored that the temperature characteristic curve drawn at the current time point suddenly increases at the current point and the slope of the temperature characteristic curve is positive, it is determined that the device wire bonding aging occurs.

7. The method of claim 4, wherein, The method further comprises the following steps: When it is determined that the value corresponding to the current point changes, the forward voltage drop change calculation is performed, wherein The following expression is used to calculate the current forward voltage drop change corresponding to the current point: ΔV SD = V SD_aged - V SD0 wherein, ΔV SD represents a current pressure drop change amount corresponding to the current point; V SD_aged represents a current pressure drop value corresponding to the current point; V SD0 represents an obtained previous pressure drop value corresponding to a previous point, wherein, for body diode bipolar degradation, the previous pressure drop value is determined based on a current, a change amount of a drift region resistance, and a temperature; for device wire bonding aging, the previous pressure drop value is determined based on a current, a change amount of a wire bonding resistance, and a temperature.

8. The method of claim 3, wherein, The device state diagnosis system comprises When the power cycle is measured a new V SD temperature curve, which is used as a new junction temperature monitoring V SD temperature curve. At the same time, ΔV SD temperature curve is used to evaluate the aging of the body diode and the wire bond of the device, said specific number of times comprising 1000 times.

9. A temperature characteristic-based device state diagnosis system characterized by comprising: The measurement module measures the forward voltage drop data of the semiconductor device under different temperature conditions by specifying the power analyzer and loading the preset current; The analysis and drawing module is configured to analyze the forward voltage drop data at different temperature points and draw the temperature characteristic curve of the forward voltage drop data and temperature; The diagnosis processing module performs the device state diagnosis of the to-be-diagnosed device once each time the drawing of the temperature characteristic curve is performed to obtain the diagnosis state result. ​ 10. The temperature characteristic based device state diagnostic system of claim 9, wherein, in an electrical and thermal stress test environment, a preset gate voltage of -8V and a preset body diode forward current of 20A are loaded, and forward voltage drop data of the semiconductor device in a temperature range of 30°C to 150°C is measured; when the forward voltage drop data of the semiconductor device is measured for the first time, an initial forward voltage drop difference is calculated.

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