Zener diode modeling method, device model and simulation method
By optimizing the high and low temperature reverse bias leakage current and reverse breakdown current models of Zener diodes, the problem of insufficient current simulation accuracy of Zener diodes in high and low temperature environments was solved, and higher simulation accuracy was achieved.
Patent Information
- Application Number
- CN202511429903.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-30
- Publication Date
- 2026-01-23
AI Technical Summary
The current simulation accuracy of Zener diodes after reverse breakdown in existing technologies is poor, especially the simulation accuracy of reverse leakage current under high and low temperature environments, which cannot meet the requirements of automotive-grade platforms.
Based on the device sub-model of the standard Zener diode, thermodynamic temperature, tunneling current temperature coefficient, leakage current parameter, and reverse bias resistance temperature coefficient are defined. By calculating the temperature modulation factor and correcting the resistor, the high and low temperature reverse bias leakage current and reverse breakdown current models of the Zener diode are optimized.
The simulation accuracy of the reverse breakdown current of the Zener diode has been improved, and the simulation accuracy of the reverse bias leakage current has been improved under high and low temperature environments, meeting the requirements of automotive-grade platforms.
Smart Images
Figure CN121389941A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor technology, and in particular to a modeling method, device model, and simulation method for Zener diodes. Background Technology
[0002] A Zener diode, also known as a PN junction diode, is a special type of diode that utilizes the reverse breakdown characteristic of a PN junction to achieve a stable voltage output under specific voltage conditions. When the reverse voltage reaches the breakdown voltage, the diode undergoes reverse breakdown, causing a sharp increase in current, but the voltage remains essentially constant, thus achieving voltage regulation.
[0003] In existing technologies, the current of unipolar diodes is simulated using a SPICE simulator (Simulation Program with Integrated Circuit Emphasis). SPICE simulators are the most widely used circuit-level simulation programs in the device design industry. Various software vendors offer different versions of SPICE simulator software, such as VSPICE, HSPICE, and PSPICE. These software programs share a similar core simulation algorithm, all employing the SPICE simulator simulation algorithm developed by the University of California, Berkeley.
[0004] However, existing Zener diode models have the following drawbacks:
[0005] 1. The simulation accuracy of the current after reverse breakdown of a Zener diode is poor, such as... Figures 1 to 3 , Figure 1 This is a comparison chart of the measured data and the standard model at a temperature of 25℃, area=2.25E-10, Pj=6E-5, and Vj=0. The X-axis is the reverse voltage applied across the diode, and the Y-axis is the current flowing through the diode. Figure 2 and Figure 3 Different temperatures Figure 2 The temperature is -40℃. Figure 3 The temperature is 150℃. From Figures 1 to 3 It can be seen that when the reverse voltage breaks down the Zener diode at -5.5V, the simulation results cannot reflect the trend of the diode current at this time, and the accuracy is poor.
[0006] 2. When simulating Zener diodes in high-temperature or low-temperature environments, the accuracy of the simulated reverse-bias leakage current is poor and cannot meet the requirements of automotive-grade platforms. For example... Figure 2 and Figure 3 , Figure 2 The temperature is -40℃, which is a low temperature. Figure 3 The temperature is 150℃, which is considered high. Figure 2 andFigure 3 When the reverse voltage is between -5.5V and -2V, the simulation current and the actual current are too different, and the simulation accuracy is poor. SUMMARY
[0007] The present application aims to provide a modeling method of Zener diode, a device model and a simulation method, which can improve the simulation accuracy of the current after the reverse breakdown of the Zener diode and the simulation accuracy of the reverse bias leakage current.
[0008] In order to achieve the above-mentioned purpose, the present application provides a modeling method of Zener diode, comprising:
[0009] providing a device sub-model of a standard Zener diode;
[0010] defining a thermodynamic temperature T_kelvin, a tunneling current temperature first-order term coefficient t_ntun1, a tunneling current temperature second-order term coefficient t_ntun2, an effective leakage parameter jtun_eff, a leakage temperature parameter jtun_temp, a leakage exponent parameter ntun_eff, a reverse bias resistance rbv, a reverse bias resistance temperature first-order term coefficient t_rbv1, a reverse bias resistance temperature second-order term coefficient t_rbv2 based on the device sub-model of the standard Zener diode;
[0011] defining an absolute temperature pt_jtun as pt_jtun=temper+T_kelvin, wherein pt_jtun is the absolute temperature, temper is the simulation temperature, and T_kelvin is the thermodynamic temperature, and defining a temperature offset pt as pt=temper-25, wherein pt is the temperature offset, and temper is the simulation temperature;
[0012] defining a temperature modulation factor as tfac_ntun=1+t_ntun1*pt+t_ntun2*pt*pt, wherein tfac_ntun is the temperature modulation factor, t_ntun1 is the tunneling current temperature first-order term coefficient, t_ntun2 is the tunneling current temperature second-order term coefficient, and pt is the temperature offset;
[0013] defining a reverse bias resistance modulation factor as tfac_rbv=1+t_rbv1*pt+t_rbv2*pt*pt, wherein tfac_rbv is the modulation factor, t_rbv1 is the reverse bias resistance temperature first-order term coefficient, t_rbv2 is the reverse bias resistance temperature second-order term coefficient, and pt is the temperature offset;
[0014] calculating the final leakage correction, and the calculation method is ntun_final=ntun_eff*tfac_ntun, wherein ntun_final is the final leakage correction, ntun_eff is the leakage exponent parameter, and tfac_ntun is the temperature modulation factor.
[0015] calculating the final effective leakage correction, by using the calculation method of jtun_final = jtun_eff * pt_jtun ** jtun_temp, wherein, jtun_final is the effective leakage correction, jtun_eff is the effective leakage parameter, pt_jtun is the absolute temperature, and jtun_temp is the leakage temperature parameter;
[0016] calculating the correction resistance, by using the calculation method of r1 = rbv * tfac_rbv * max(v(n,p),0) + 0.1, wherein, r1 is the correction resistance, rbv is the reverse bias resistance, tfac_rbv is the reverse bias resistance modulation factor, and v(n,p) is the difference between the cathode voltage and the anode voltage of the Zener diode.
[0017] Optionally, in the modeling method of the Zener diode, T_kelvin = 273, t_ntun1 = 1E-4, t_ntun2 = -8.2824E-6, jtun_eff = 1.776E52, jtun_temp = -23.69, ntun_eff = 11.4, rbv = 31.25, t_rbv1 = 5E-3, and t_rbv2 = 4.4E-5.
[0018] Optionally, in the modeling method of the Zener diode, the Zener diode comprises a p terminal and an n terminal, wherein, the p terminal is the anode terminal, and the n terminal is the cathode terminal.
[0019] Optionally, in the modeling method of the Zener diode, the Zener diode is modeled by using a SPICE simulator.
[0020] The application further provides a Zener diode device model, comprising:
[0021] a device sub-model of a standard Zener diode;
[0022] The high and low temperature reverse bias leakage current optimization sub-model comprises a final leakage correction and a final effective leakage correction, the final leakage correction is ntun_final='ntun_eff*tfac_ntun', wherein, tfac_ntun=1+t_ntun1*pt+t_ntun2*pt*pt, pt=temper-25, ntun_final is the final leakage correction, tfac_ntun is a temperature modulation factor, t_ntun1 is a tunneling current temperature first-order term coefficient, t_ntun2 is a tunneling current temperature second-order term coefficient, pt is a temperature offset, ntun_eff is a leakage index parameter; and the final effective leakage correction is jtun_final='jtun_eff*pt_jtun**jtun_temp', wherein, pt_jtun=temper+T_kelvin, jtun_final is the effective leakage correction, jtun_eff is an effective leakage parameter, pt_jtun is an absolute temperature, jtun_temp is a leakage temperature parameter, temper is a simulation temperature, and T_kelvin is a thermodynamic temperature.
[0023] The reverse breakdown current optimization sub-model is r1 p p1 'rbv*tfac_rbv*max(v(n,p),0)+0.1', wherein, tfac_rbv=1+t_rbv1*pt+t_rbv2*pt*pt, tfac_rbv is a modulation factor, t_rbv1 is a reverse bias resistance temperature first-order term coefficient, t_rbv2 is a reverse bias resistance temperature second-order term coefficient, pt is a temperature offset, r1 is a correction resistance, rbv is a reverse bias resistance, tfac_rbv is a reverse bias resistance modulation factor, and v(n,p) is a difference between a cathode voltage and an anode voltage of the Zener diode.
[0024] Optionally, in the Zener diode device model, T_kelvin=273, t_ntun1=1E-4, t_ntun2=-8.2824E-6, jtun_eff=1.776E52, jtun_temp=-23.69, ntun_eff=11.4, rbv=31.25, t_rbv1=5E-3, and t_rbv2=4.4E-5.
[0025] Optionally, in the Zener diode device model, the Zener diode comprises a p terminal and an n terminal, the p terminal is an anode terminal, and the n terminal is a cathode terminal.
[0026] The application further provides a simulation method of the Zener diode device model, comprising: simulating the Zener diode device model.
[0027] Optionally, in the simulation method of the Zener diode device model, the Zener diode device model is simulated by using a SPICE simulator.
[0028] Optionally, in the simulation method of the Zener diode device model, the simulation temperature includes -55℃ to +150℃.
[0029] In the modeling method, the device model and the simulation method of the Zener diode provided by the application, the high-low temperature reverse bias leakage current optimization sub-model and the reverse breakdown current optimization sub-model are added on the basis of the original standard Zener diode device sub-model, the simulation accuracy of the current after the reverse breakdown of the Zener diode is improved, and the simulation accuracy of the reverse bias leakage current is also improved when the temperature of the simulation environment is low or high. BRIEF DESCRIPTION OF DRAWINGS
[0030] Figures 1 to 3 is a comparison chart of the measurement data and the standard model of the Zener diode of the prior art;
[0031] Figure 4 is a flowchart of the modeling method of the Zener diode of the embodiment of the application;
[0032] Figures 5 to 7 is a comparison chart of the measurement data and the Zener diode device model of the embodiment of the application. DETAILED DESCRIPTION
[0033] The specific embodiments of the application will be described in more detail below with reference to the accompanying drawings. The advantages and features of the application will be more apparent from the following description. It should be noted that the drawings are very simplified and use non-precise proportions, only to facilitate, clarify the purpose of assisting the description of the embodiments of the application.
[0034] In the following, the terms "first", "second", etc. are used to distinguish between similar elements, and are not necessarily used to describe a particular order or time sequence. It should be understood that these terms as used can be replaced under appropriate circumstances. Similarly, if the method described herein includes a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps can be performed, and some of the steps described can be omitted and / or some other steps not described herein can be added to the method.
[0035] Please refer to Figure 4 The application provides a modeling method of a Zener diode, comprising:
[0036] S11: providing a device sub-model of a standard Zener diode;
[0037] S12: define thermodynamic temperature T_kelvin, tunneling current temperature first order term coefficient t_ntunl, tunneling current temperature second order term coefficient t_ntun2, effective leakage parameter jtun_eff, leakage temperature parameter jtun_temp, leakage exponent parameter ntun_eff, reverse bias resistance rbv, reverse bias resistance temperature first order term coefficient t_rbv1, reverse bias resistance temperature second order term coefficient t_rbv2 based on the device sub-model of the standard Zener diode;
[0038] S13: define absolute temperature pt_jtun as pt_jtun = temper + T_kelvin, where pt_jtun is the absolute temperature, temper is the simulation temperature, T_kelvin is the thermodynamic temperature, define temperature offset pt as pt = temper - 25, pt is the temperature offset, temper is the simulation temperature;
[0039] S14: define temperature modulation factor as tfac_ntun = 1 + t_ntunl*pt + t_ntun2*pt*pt, where tfac_ntun is the temperature modulation factor, t_ntunl is the tunneling current temperature first order term coefficient, t_ntun2 is the tunneling current temperature second order term coefficient, pt is the temperature offset;
[0040] S15: define reverse bias resistance modulation factor as tfac_rbv = 1 + t_rbv1*pt + t_rbv2*pt*pt, where tfac_rbv is the modulation factor, t_rbv1 is the reverse bias resistance temperature first order term coefficient, t_rbv2 is the reverse bias resistance temperature second order term coefficient, pt is the temperature offset;
[0041] S16: calculate the final leakage correction, the calculation method is ntun_final = ntun_eff*tfac_ntun, where ntun_final is the final leakage correction, ntun_eff is the leakage exponent parameter, tfac_ntun is the temperature modulation factor;
[0042] S17: calculate the final effective leakage correction, the calculation method is jtun_final = jtun_eff*pt_jtun**jtun_temp, where jtun_final is the effective leakage correction, jtun_eff is the effective leakage parameter, pt_jtun is the absolute temperature, jtun_temp is the leakage temperature parameter;
[0043] S18: calculating the correction resistance, the calculation method is r1=rbv*tfac_rbv*max(v(n,p),0)+0.1, wherein, r1 is the correction resistance, rbv is the reverse bias resistance, tfac_rbv is the reverse bias resistance modulation factor, v(n,p) is the difference between the cathode voltage and the anode voltage of the Zener diode.
[0044] Therefore, the modeled Zener diode device model comprises: a device sub-model of a standard Zener diode, the device sub-model of the standard Zener diode being a device model of a Zener diode of a conventional technology, capable of simulating a diode current in a normal temperature and non-breakdown working state, the non-breakdown working state being a forward bias working state and a reverse cut-off working state; a high and low temperature reverse bias leakage current optimization sub-model, the high and low temperature reverse bias leakage current optimization sub-model comprising a final leakage correction and a final effective leakage correction, the final leakage correction being ntun_final=‘ntun_eff*tfac_ntun’, wherein, tfac_ntun=1+t_ntun1*pt+t_ntun2*pt*pt, pt=temper-25, ntun_final is the final leakage correction, tfac_ntun is a temperature modulation factor, t_ntun1 is a tunneling current temperature first-order term coefficient, t_ntun2 is a tunneling current temperature second-order term coefficient, pt is a temperature offset, and ntun_eff is a leakage index parameter; the final effective leakage correction being jtun_final=‘jtun_eff*pt_jtun**jtun_temp’, wherein, pt_jtun=temper+T_kelvin, jtun_final is the effective leakage correction, jtun_eff is an effective leakage parameter, pt_jtun is an absolute temperature, jtun_temp is a leakage temperature parameter, temper is a simulation temperature, and T_kelvin is a thermodynamic temperature; a reverse breakdown current optimization sub-model, the reverse breakdown current optimization sub-model being r1 p p1‘rbv*tfac_rbv*max(v(n,p),0)+0.1’, wherein, tfac_rbv=1+t_rbv1*pt+t_rbv2*pt*pt, tfac_rbv is a modulation factor, t_rbv1 is a reverse bias resistance temperature first-order term coefficient, t_rbv2 is a reverse bias resistance temperature second-order term coefficient, pt is a temperature offset, r1 is a correction resistance, rbv is a reverse bias resistance, tfac_rbv is a reverse bias resistance modulation factor, and v(n,p) is the difference between the cathode voltage and the anode voltage of the Zener diode.
[0045] Wherein, T_kelvin = 273, t_ntun1 = 1E-4, t_ntun2 = -8.2824E-6, jtun_eff = 1.776E52, jtun_temp = -23.69, ntun_eff = 11.4, rbv = 31.25, t_rbv1 = 5E-3, t_rbv2 = 4.4E-5. The Zener diode includes a p terminal and an n terminal, the p terminal is an anode terminal, and the n terminal is a cathode terminal.
[0046] Specifically, the model is expressed as:
[0047] .subckt zener p n
[0048] .param
[0049] +T_kelvin = 273 t_ntun1 = 1E-4 t_ntun2 = -8.2824E-6
[0050] +jtun_eff = 1.776E52 jtun_temp = -23.69 ntun_eff = 11.4
[0051] +rbv = 31.25 t_rbv1 = 5E-3 t_rbv2 = 4.4E-5
[0052] .param
[0053] +pt_jtun = 'temper + T_kelvin' pt = 'temper - 25'
[0054] +tfac_ntun = '1 + t_ntun1 * pt + t_ntun2 * pt * pt'
[0055] +tfac_rbv = '1 + t_rbv1 * pt + t_rbv2 * pt * pt'
[0056] +ntun_final = 'ntun_eff * tfac_ntun'
[0057] +jtun_final = 'jtun_eff * pt_jtun ** jtun_temp'
[0058] r1 p p1 'rbv * tfac_rbv * max (v (n, p), 0) + 0.1'
[0059] d0 p1 n zener_model
[0060] .model zener_model d
[0061] *****Flag Parameters***
[0062] +level=3
[0063] *****DC Model Parameter***
[0064] …
[0065] .ends zener
[0066] The application also provides a simulation method of a zener diode device model, comprising: simulating the zener diode device model. The zener diode is modeled and the zener diode device model is simulated using a SPICE simulator, for example, an HSPICE simulator.
[0067] The simulation temperature comprises -55℃ to +150℃. The simulation temperature can be divided into a high-temperature section, a normal temperature and a low-temperature section, for example, -55℃ to 25℃ and 25℃ are the normal temperature, and 25℃ to 150℃ are the high-temperature section. In other embodiments of the application, other division methods can also be used.
[0068] The final simulation results are as follows: Figures 5 to 7 , Figure 5 is a comparison diagram of measured data and a device model when the temperature is 25℃, area=2.25E-10, Pj=6E-5 and Vj=0. The X axis is the reverse voltage applied to the two ends of the diode, and the Y axis is the current flowing through the diode. Figure 6 and Figure 7 The temperatures are different, Figure 6 The temperature of is -40℃, which is low temperature, Figure 7 The temperature of is 150℃, which is high temperature. From Figures 5 to 7 It can be seen that when the reverse voltage is higher than -5.5V and the zener diode is broken down, the current of the diode at this time can be accurately simulated. The reverse leakage current of the simulated zener diode in the high-temperature environment and the low-temperature environment is accurate, which can meet the requirements of the automotive platform. Figure 6 and Figure 7 When the reverse voltage is between -5.5V and -2V, the simulated current and the actual current are not much different, and the simulation accuracy is high. And Figures 5 to 7 In, the simulation accuracy of the current at any reverse voltage is improved.
[0069] In conclusion, in the modeling method of the Zener diode, the device model and the simulation method provided in the embodiments of the present application, the high and low temperature reverse bias leakage current optimization sub-model and the reverse breakdown current optimization sub-model are added on the basis of the original standard Zener diode device sub-model, the simulation accuracy of the current after the reverse breakdown of the Zener diode is improved, and the simulation accuracy of the reverse bias leakage current is also improved when the temperature of the simulation environment is low or high.
[0070] The above merely describes the preferred embodiments of the present application, and does not limit the present application in any way. Any person skilled in the art can make any equivalent replacement, modification or change of the technical solutions and technical contents disclosed in the present application without departing from the scope of the technical solutions of the present application, and such still falls within the protection scope of the present application.
Claims
1. A method of modeling a Zener diode, characterized by, Comprising: providing a device submodel of a standard zener diode; defining a thermodynamic temperature T_kelvin, a tunneling current temperature first order term coefficient t_ntun1, a tunneling current temperature second order term coefficient t_ntun2, an effective leakage parameter jtun_eff, a leakage temperature parameter jtun_temp, a leakage exponent parameter ntun_eff, a reverse bias resistance rbv, a reverse bias resistance temperature first order term coefficient t_rbv1, a reverse bias resistance temperature second order term coefficient t_rbv2 based on the device submodel of a standard zener diode; defining an absolute temperature pt_jtun as pt_jtun=temper+T_kelvin, where pt_jtun is the absolute temperature, temper is the simulation temperature, T_kelvin is the thermodynamic temperature, defining a temperature offset pt as pt=temper-25, where pt is the temperature offset, temper is the simulation temperature; defining a temperature modulation factor as tfac_ntun=1+t_ntun1*pt+t_ntun2*pt*pt, where tfac_ntun is the temperature modulation factor, t_ntun1 is the tunneling current temperature first order term coefficient, t_ntun2 is the tunneling current temperature second order term coefficient, pt is the temperature offset; defining a reverse bias resistance modulation factor as tfac_rbv=1+t_rbv1*pt+t_rbv2*pt*pt, where tfac_rbv is the modulation factor, t_rbv1 is the reverse bias resistance temperature first order term coefficient, t_rbv2 is the reverse bias resistance temperature second order term coefficient, pt is the temperature offset; calculating a final leakage correction by ntun_final=ntun_eff*tfac_ntun, where ntun_final is the final leakage correction, ntun_eff is the leakage exponent parameter, tfac_ntun is the temperature modulation factor; calculating a final effective leakage correction by jtun_final=jtun_eff*pt_jtun**jtun_temp, where jtun_final is the effective leakage correction, jtun_eff is the effective leakage parameter, pt_jtun is the absolute temperature, jtun_temp is the leakage temperature parameter; calculating a corrected resistance by r1=rbv*tfac_rbv*max(v(n,p),0)+0.1, where r1 is the corrected resistance, rbv is the reverse bias resistance, tfac_rbv is the reverse bias resistance modulation factor, v(n,p) is the difference between the cathode voltage and the anode voltage of the zener diode.
2. The method of modeling a Zener diode of claim 1, wherein, T_kelvin=273, t_ntun1=1E-4, t_ntun2=-8.2824E-6, jtun_eff=1.776E52, jtun_temp=-23.69, ntun_eff=11.4, rbv=31.25, t_rbv1=5E-3, t_rbv2=4.4E-5.
3. The method of modeling a Zener diode of claim 1, wherein, The Zener diode comprises a p terminal and an n terminal, the p terminal being an anode terminal and the n terminal being a cathode terminal.
4. The method of modeling a Zener diode of claim 1, wherein, The Zener diode is modeled using a SPICE simulator.
5. A Zener diode device model formed using a modeling method of the Zener diode according to any one of claims 1 to 4, characterized by, Comprise: A device sub-model of a standard Zener diode; A high-low temperature reverse bias leakage current optimization sub-model, the high-low temperature reverse bias leakage current optimization sub-model comprising a final leakage correction of ntun_final='ntun_eff*tfac_ntun', wherein tfac_ntun=1+t_ntun1*pt+t_ntun2*pt*pt, pt=temper-25, ntun_final is the final leakage correction, tfac_ntun is a temperature modulation factor, t_ntun1 is a tunneling current temperature first order term coefficient, t_ntun2 is a tunneling current temperature second order term coefficient, pt is a temperature offset, ntun_eff is a leakage index parameter, and a final effective leakage correction of jtun_final='jtun_eff*pt_jtun**jtun_temp', wherein pt_jtun=temper+T_kelvin, jtun_final is the effective leakage correction, jtun_eff is an effective leakage parameter, pt_jtun is an absolute temperature, jtun_temp is a leakage temperature parameter, temper is a simulation temperature, and T_kelvin is a thermodynamic temperature; A reverse breakdown current optimization sub-model, the reverse breakdown current optimization sub-model being r1 p p1 'rbv*tfac_rbv*max(v(n,p),0)+0.1', wherein tfac_rbv=1+t_rbv1*pt+t_rbv2*pt*pt, tfac_rbv is a modulation factor, t_rbv1 is a reverse bias resistance temperature first order term coefficient, t_rbv2 is a reverse bias resistance temperature second order term coefficient, pt is a temperature offset, r1 is a correction resistance, rbv is a reverse bias resistance, tfac_rbv is a reverse bias resistance modulation factor, and v(n,p) is a difference between a cathode voltage and an anode voltage of the Zener diode.
6. The Zener diode device model of claim 5, wherein, T_kelvin=273, t_ntun1=1E-4, t_ntun2=-8.2824E-6, jtun_eff=1.776E52, jtun_temp=-23.69, ntun_eff=11.4, rbv=31.25, t_rbv1=5E-3, and t_rbv2=4.4E-5.
7. The Zener diode device model of claim 5, wherein, The Zener diode comprises a p terminal and an n terminal, the p terminal being an anode terminal and the n terminal being a cathode terminal.
8. A simulation method using the Zener diode device model according to any one of claims 6 to 7, characterized by, Comprise: The Zener diode device model is simulated.
9. The method of simulating a Zener diode device model of claim 8, wherein, The Zener diode device model is simulated using a SPICE simulator.
10. The method of simulating a Zener diode device model of claim 8, wherein, The simulation temperature comprises -55℃ to +150℃.