Miniaturized low-power-consumption high-isolation millimeter wave channel module

By optimizing the multi-layer vertical interconnect structure and local oscillator modulation circuit, and integrating a multi-functional transceiver chip, the problems of large size, high power consumption, and insufficient isolation of traditional millimeter-wave equipment are solved, realizing a miniaturized, low-power, and highly isolated millimeter-wave channel module.

CN121396253BActive Publication Date: 2026-03-24CHENGDU TIANBO MICROELECTRONICS TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-12-25
Publication Date
2026-03-24

AI Technical Summary

Technical Problem

Traditional millimeter-wave communication equipment suffers from problems such as large device size, high power consumption, and insufficient isolation between transmitting and receiving channels, making it difficult to achieve multi-channel miniaturization, low power consumption, and high isolation.

Method used

It adopts a multi-layer vertical interconnect structure, integrates a multi-functional transceiver chip and a local oscillator modulation circuit, and combines a microwave mixed-voltage multilayer board and a 32-channel filter bank to optimize the circuit layout. It controls the on and off of the local oscillator amplifier and mixer through asynchronous time-division modulation, reducing discrete components, improving isolation and reducing power consumption.

Benefits of technology

It achieves miniaturization (reduced size and thickness), low power consumption (reduced by 50%), and high isolation (isolation improved by 60dB) of millimeter-wave channel modules, making it suitable for multi-channel transceiver circuit designs.

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Abstract

The application relates to a miniaturized low-power-consumption high-isolation millimeter wave channel module, belonging to the communication technical field, comprising a multilayer vertical interconnection structure, from top to bottom, A layer, B layer and C layer, wherein the A layer is a millimeter wave high-frequency layer, the B layer is a control, crystal oscillator and low-frequency layer, and the C layer is a power supply layer; a multifunctional transceiving chip is integrated in the A layer, the multifunctional transceiving chip integrates a switch, a filter, a mixer, a driving amplifier, a low-noise amplifier and a frequency multiplier of a millimeter wave link on a single chip; a local oscillator modulation circuit is arranged on the B layer, adopts an asynchronous time-division modulation mode, and realizes the opening or closing of a local oscillator amplifier and a mixer through NMOS switches and FPGA control logic; and a 32-way filter group is combined with two power dividers and arranged on the B layer. The application realizes the complex interconnection and layout inside the equipment, not only greatly improves the channel circuit isolation degree, reduces the power consumption of the product, but also greatly compresses the size of the product.
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Description

TECHNICAL FIELD

[0001] The present application relates to the field of communication technology, and in particular to a miniaturized low-power high-isolation millimeter wave channel module. BACKGROUND

[0002] With the development of millimeter wave communication technology, in order to improve the frequency band resources and anti-interference, the communication frequency tends to be high frequency, and the performance requirement is higher and higher, which puts forward higher requirements for millimeter wave communication equipment. Therefore, the design of millimeter wave circuit and space layout also needs to be continuously improved and optimized in the direction of multi-channel miniaturization, low power consumption, high isolation, etc. In order to balance the high isolation degree, low power consumption and multi-channel transmission between the transmitting and receiving channels, the traditional millimeter wave circuit device is large in size, and a circuit design method (such as shown in Figure 1 ) is often used, which is built by single channel sub-cavity and discrete devices. However, this design has the following disadvantages:

[0003] 1) The space required by the independent substructure is large, which is not conducive to the multi-channel integration and diversification of the function of the device;

[0004] 2) The transmitting and receiving isolation degree is limited by using the independent sub-cavity structure, and cannot meet the higher isolation degree requirement (more than 85dB);

[0005] The traditional discrete device built channel circuit is large in power consumption, size and cost, and is not suitable for multi-channel miniaturization. SUMMARY

[0006] To solve the above technical problems, the present application mainly aims at solving the design problem of the contradiction between the isolation degree, power consumption index and product size of the traditional multi-channel device, and provides a miniaturized low-power high-isolation millimeter wave channel module.

[0007] A miniaturized low-power high-isolation millimeter wave channel module, comprising:

[0008] A multi-layer vertical interconnection structure, from top to bottom, A layer, B layer and C layer, wherein the A layer is a millimeter wave high frequency part, the B layer is a control, crystal oscillator and low frequency part, and the C layer is a power supply layer;

[0009] A multi-functional transceiver chip integrated in the A layer, which integrates the switch, filter, mixer, driver amplifier, low noise amplifier and frequency multiplier of the millimeter wave link on a single chip;

[0010] A local oscillator modulation circuit arranged in the A layer, which adopts an asynchronous time division modulation mode, and realizes the opening or closing of the local oscillator amplifier and the mixer through the NMOS switch and the FPGA control logic;

[0011] A 32-way filter bank arranged in the B layer in combination with a two-power divider, which realizes multi-channel signal selection filtering.

[0012] Further, the A layer adopts a microwave mixed pressure multilayer board design, and electrical connection between components on the board is realized through internal wiring.

[0013] Further, the microwave mixed pressure multilayer board is mixed and pressed by RO3003, FR28 and FR4 board materials, the number of layers is 10, and the multifunctional transceiver chip is bonded to the mixed board through micro mounting technology.

[0014] Further, the local oscillator modulation circuit comprises two NMOS switch tubes and an FPGA, the FPGA controls the TTL control level of the host system, outputs TTL' and TTL'' signals, controls the asynchronous time division work of NMOS switch 1 and NMOS switch 2, and makes the local oscillator amplifier 1 and the local oscillator amplifier 2, the mixer 1 and the mixer 2 start or stop according to the working mode of TTL.

[0015] Further, the B layer realizes the functions of radio frequency part control electrical interconnection and receiving channel multi-channel transmission through the space stacking technology and 32-way filter set integration.

[0016] Further, the 32-way filter set is arranged in a space of 22mm*32mm*5.5mm, realizes multi-channel filter transmission of the receiving channel through two power dividers, and improves the frequency selectivity and anti-interference ability.

[0017] Further, the C layer comprises a power control board, the power control board is arranged at the uppermost position of the C layer through space stacking, reduces electromagnetic radiation, and improves the space utilization rate and anti-interference performance.

[0018] Further, the millimeter wave channel module supports Ka frequency band and L wave band transceiver channels, and integrates an X wave band frequency hopping source, a power control and an MCU.

[0019] The beneficial effects of the present application are embodied in that the present application adopts a plurality of vertical interconnections, a transceiving multifunctional chip, a 32-way switch filter and a local oscillator optimization, realizes the complex interconnection and layout inside the device, greatly reduces the space size and height of the channel circuit interconnection, the size is reduced by about 5.7mm compared with the traditional microwave channel product, the thickness is reduced by about 3.8mm, and the weight is reduced by about 70g; the local oscillator modulation circuit and the multifunctional integrated chip adopted by the present application improve the transceiving isolation (the isolation can be improved by about 60dB), reduce the number of millimeter wave discrete devices, reduce the power consumption by about 50%, and can be widely applied to similar microwave multi-channel transceiver circuit design, and has wide applicability. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 It is a schematic diagram of a traditional millimeter wave circuit design;

[0021] Figure 2 Circuit schematic diagram of the module of the present application;

[0022] Figure 3 Structural schematic diagram of the module of the present application;

[0023] Figure 4 Assembly explosion diagram of the module of the present application;

[0024] Figure 5 Circuit schematic diagram of the local oscillator modulation circuit of the module of the present application;

[0025] Figure 6 Circuit schematic diagram of the traditional local oscillator non-modulation circuit. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.

[0027] The main circuit schematic of the unmanned aerial integrated channel module is shown in Figure 2 The module contains millimeter wave Ka-band transceiver channel, L-band transceiver channel, 32-way filter group, X-band frequency hopping source, power control, and MCU, which are six parts. The circuit working frequency is high, the filter path is more, the control circuit is complex, the radio frequency link is complex, and the mutual interference between the functional modules is serious. It is difficult to realize the traditional microwave circuit design in the size of 66mm×68mm×15mm.

[0028] In embodiment 1, in order to realize the requirements of miniaturization, low power consumption, high isolation and high reliability of the unmanned aerial integrated channel module, a small-sized low-power high-isolation millimeter wave channel module is designed, which includes three layers of vertical interconnection A, B and C structures, as shown in Figure 3 and Figure 4 .

[0029] The A layer is a high-frequency part of millimeter waves, the radio frequency circuit is built through a multi-functional transceiver chip and a microwave multilayer board, the electrical connection between the components on the board is realized through the internal wiring of the microwave multilayer board; the millimeter wave link multiple chips (switch, filter, mixer, driver amplifier, low noise amplifier, frequency multiplier) and spatial layout are integrated into a single chip of 2.7mm*3mm*0.1mm through the multi-functional transceiver chip, the structural space is greatly saved, the complicated design of the control circuit is avoided, the power consumption of the entire link is reduced, and the multi-channel integration design is improved; meanwhile, through the improvement and optimization design of the local oscillator circuit, the modulation local oscillator link is adopted, and the isolation of the transceiving channel is greatly improved.

[0030] The B layer is a control, crystal oscillator and low-frequency part, the spatial stacking and 32-way switch filter group integration are adopted to realize the functions of the radio frequency part control electrical interconnection and the multi-channel transmission of the receiving channel, the multi-channel filter transmission of the receiving channel is realized through the two power dividers and the 32-way switch filter group, which not only greatly improves the anti-interference ability of the equipment, but also reduces the design size of the circuit, and provides sufficient space for the multi-channel and small size of the equipment.

[0031] The C layer is a power supply layer, mainly through spatial stacking, the power control board is stacked on the uppermost layer of the module C layer, the electromagnetic radiation is reduced, and the anti-interference and space utilization of the equipment are improved.

[0032] The A layer adopts the microwave mixed pressure multilayer board combined with the multi-functional transceiver chip, the microwave mixed pressure multilayer board adopts a 10-layer multilayer board design, the RO3003, FR28 and FR4 board materials are mixed and pressed, the multi-functional transceiver chip is bonded to the mixed board through the mixed mounting technology (micro mounting technology), and the multi-functional transceiver chip model can adopt GR1628D. Compared with the traditional single mixed pressure multilayer board (multiple chips and multiple drive circuits) and single multi-functional transceiver chip (complex electrical interconnection), the integration degree is higher, the number of discrete devices is reduced, only one COMS integrated chip and the corresponding simple drive circuit can realize the multi-functional transceiving function, and the complexity of the drive circuit interconnection and the power consumption of the equipment are greatly reduced. Due to the higher integration degree and the reduced number of devices, the influence of the assembly process difference between millimeter wave products is also reduced, and the consistency of each index of the equipment is improved. Meanwhile, for the high transceiving isolation and low power consumption indexes of the channel, without increasing the switches and other devices (increasing the power consumption) and the cost, the active devices on the local oscillator link are optimized through the design of the local oscillator circuit, and the local oscillator active devices are turned on or off according to a certain frequency. For example, the local oscillator active devices are turned on at the frequency of 1.8GHz, and the local oscillator active devices are turned off at the frequency of 2.4GHz. Figure 5As shown, the local oscillator modulation circuit mainly consists of two NMOS switch tubes and control logic FPGA. The FPGA controls the output TTL' and TTL'' (-TTL' = TTL') by collecting the control level TLL of the host system, so as to realize the asynchronous time division opening or closing of NMOS switch 1 and NMOS switch 2 (NMOS switch 1 is opened, and NMOS switch 2 is closed; NMOS switch 1 is closed, and NMOS switch 2 is opened). Further, the local oscillator amplifier 1 and the local oscillator amplifier 2, the mixer 1 and the mixer 2 are opened or closed according to the working mode of TTL. Compared with the traditional non-modulation and continuous local oscillator circuit (without the design of the local oscillator modulation circuit part, such as Figure 6 Compared with the traditional non-modulation and continuous local oscillator circuit (without the design of the local oscillator modulation circuit part, such as

[0033] Among them, the spatial layout of the 32-channel B-layer filter bank and the power divider. For the requirements of multi-channel, high signal selectivity and small size, the traditional multi-channel signal selection filter circuit cannot meet the design requirements in limited space. The traditional multi-channel selection filter bank generally installs components on both sides of the printed board, and the cavity needs to occupy a large space, or even if there is a multi-channel integrated filter bank, it is also difficult to integrate a 32-channel selection filter bank in a limited space (22mm*32mm*5.5mm). In the embodiment, the channel adopts the spatial layout design of two power dividers combined with a 32-channel filter bank, which fully utilizes the miniaturization and high integration of the 32-channel filter bank, optimizes the circuit spatial layout design, and effectively realizes the index requirements of multi-channel, high signal selectivity and small size.

[0034] The microwave mixed voltage multilayer board is combined with the multifunctional transceiver chip to realize the complex electrical connection of the microwave multifunctional integrated circuit, reduce the number of microwave discrete devices, greatly reduce the difficulty of electrical interconnection, and also reduce the power consumption, thereby providing an effective solution for further miniaturization and low power consumption of the product. The local oscillator modulation technology is adopted to solve the problem that the traditional microwave channel circuit cannot simultaneously ensure low power consumption, low cost and high isolation, thereby providing a quick and effective way for further improving the circuit isolation, reducing the product power consumption and cost. The space layout based on the power divider and the 32-way filter group is adopted to reduce the product size of the traditional microwave channel circuit, improve the space utilization and the frequency selectivity of the multi-channel, enhance the anti-interference ability of the channel, and solve the problems of the multi-channel, small size, high isolation, high frequency selectivity and anti-interference of the traditional microwave channel product.

[0035] The microwave mixed voltage multilayer board adopts conventional multilayer board design and processing technology, and the top layer and the bottom layer are radio frequency layers. In order to adapt to the radio frequency performance and strength requirements of the millimeter wave signal, high-frequency hard substrate materials such as RO3003 are mostly used as the material, and the middle layer is mostly designed as a power supply layer, a control layer and the like for completing the feeding and control of the surface devices. FR-4 and RF-28 are mostly used as the material, and the layers are connected to each other through vias. In order to consider electromagnetic compatibility, a large-area metal ground layer is appropriately added to the middle layer as a shielding layer. The surface layer considers the mixed mounting of bare chips and packaged components, and part of the metallized vias will adopt the process of hole filling and leveling, and part of the holes on the back will also adopt the process of back drilling and filling, thereby facilitating micro-assembly bonding and bonding.

[0036] The local oscillator modulation circuit adopts MOS switches on the control board, and according to the transceiver control signal of the user side, the active devices on the local oscillator link are turned on or turned off, so as to turn on or turn off the local oscillator signal, and then turn off the mixer, thereby achieving the purpose of increasing the transceiver isolation of the radio frequency link and reducing the power consumption.

[0037] In view of the limited size of the module, the high-integration 32-way switch filter group is fully utilized, the space layout is optimized by combining the power division network and the multilayer board wiring feeding, and the structure design of the multi-channel is realized in the limited space. In the case of complete assembly, good anti-interference, maintainability and reliability are realized, the product production and debugging process are simplified, and it is an effective module miniaturization technology approach.

[0038] Although the embodiments of the present application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to the embodiments without departing from the principles and spirit of the present application, and the scope of the present application is defined by the appended claims and their equivalents.

Claims

1. A miniaturized, low-power, high-isolation millimeter-wave channel module, characterized in that, include: The multi-layer vertical interconnect structure consists of layers A, B, and C from top to bottom. Layer A is a millimeter-wave high-frequency layer, layer B is a control, crystal oscillator, and low-frequency layer, and layer C is a power layer. Layer A adopts a microwave hybrid multilayer board design, and the electrical connection between components on the board is achieved through internal wiring. The microwave hybrid multilayer board is made of RO3003, FR28, and FR4 materials, with 10 layers. Multifunctional transceiver chips are bonded to the hybrid board using micro-assembly technology. A multi-functional transceiver chip is integrated on layer A. The multi-functional transceiver chip integrates the millimeter-wave link switch, filter, mixer, drive amplifier, low-noise amplifier, and frequency multiplier onto a single chip; the mixer includes mixer 1 and mixer 2. The local oscillator modulation circuit, located on layer A, employs asynchronous time-division modulation. It uses NMOS switches and FPGA control logic to enable or disable the local oscillator amplifier and mixer. In the local oscillator modulation circuit, NMOS switch 1 is connected to mixer 1 via local oscillator amplifier 1, and NMOS switch 2 is connected to mixer 2 via local oscillator amplifier 2. By controlling NMOS switches 1 and 2 to operate asynchronously in time-division mode, local oscillator amplifier 1 and local oscillator amplifier 2, as well as mixer 1 and mixer 2, are enabled or disabled according to TTL operating conditions. The C layer is connected to the B layer below and is used for power supply. It is connected to the local oscillator modulation circuit, multi-functional transceiver chip and X-band frequency hopping source through the power control board. A 32-channel filter bank, combined with a two-way power divider, is deployed on layer B to achieve selective filtering of multi-channel signals.

2. The miniaturized, low-power, high-isolation millimeter-wave channel module according to claim 1, characterized in that, The millimeter-wave channel module supports Ka-band and L-band transceiver channels and integrates an X-band frequency hopping source, power control, and MCU.

3. The miniaturized, low-power, high-isolation millimeter-wave channel module according to claim 1, characterized in that, The local oscillator modulation circuit includes two NMOS switches and an FPGA. The FPGA acquires the TTL control level of the host system, and the controller outputs TTL' and TTL'' signals, -TTL'=TTL'', to control NMOS switch 1 and NMOS switch 2 to work asynchronously in time-division multiplexing, so that local oscillator amplifier 1 and local oscillator amplifier 2, and mixer 1 and mixer 2 are turned on or off according to the TTL operating mode. The TTL' and TTL'' signals respectively represent the control signals for NMOS switch 1 to be on and NMOS switch 2 to be off, or NMOS switch 1 to be off and NMOS switch 2 to be on.

4. A miniaturized, low-power, high-isolation millimeter-wave channel module according to claim 1, characterized in that, The B layer, through spatial stacking technology and the integration of 32 filter banks, enables the electrical interconnection of the radio frequency section control and the multi-channel transmission of the receiving channel.

5. A miniaturized, low-power, high-isolation millimeter-wave channel module according to claim 1, characterized in that, The 32-channel filter bank is arranged in a space of 22mm×32mm×5.5mm. It achieves multi-channel filtering transmission of the receiving channel through a two-way power divider, thereby improving frequency selectivity and anti-interference capability.

6. A miniaturized, low-power, high-isolation millimeter-wave channel module according to claim 1, characterized in that, The C layer includes a power control board, which is stacked on top of the C layer to reduce electromagnetic radiation, improve space utilization, and enhance anti-interference capabilities.

Citation Information

Patent Citations

  • Millimeter wave 16-channel transmit-receive frequency conversion channel assembly

    CN106603091A

  • Subminiature millimeter wave multichannel transceiving channel universalization integrated system

    CN110677166A