Plating device

Abstract

The present application provides a kind of plating device.This plating device has: plating tank;Substrate holder;Anode;At least one resistor, be configured between the anode and the substrate holder, for electric field adjustment, the at least one resistor respectively has multiple through holes that are communicated with anode side and substrate holder side;And resistance component, be configured between the anode and the substrate holder, for electric field adjustment, the resistance component has the inlet of guiding fluid, is configured to make the amount or pressure of the fluid in the resistance component change so as to change volume, the resistance component is set to not block the multiple through holes on the surface of the at least one resistor closest to the anode.

Description

Technical Field

[0001] This application relates to a plating apparatus. Background Technology

[0002] As an example of a plating apparatus using electroplating, a so-called immersion plating apparatus is known in which a substrate (e.g., a semiconductor wafer) and an anode are positioned horizontally opposite each other (see, for example, Patent Document 1). Another example of a plating apparatus using electroplating is a cup-type plating apparatus (see, for example, Patent Document 2). In the cup-type plating apparatus, a substrate held by a substrate holder is immersed in a plating solution with the plating surface facing down. A voltage is applied between the substrate and the anode, causing a conductive film (plating film) to deposit on the surface of the substrate.

[0003] In such plating apparatuses, the substrate typically has electrical contacts at its periphery. Due to varying distances from these contacts, a potential difference arises between the periphery and the center of the substrate during the plating process, potentially causing deviations in the plating current. Therefore, it is known that, in order to improve the uniformity of the thickness of the coating formed on the substrate, a resistor for adjusting the electric field is placed between the substrate and the anode. Furthermore, to allow for more flexible electric field adjustment, a plating apparatus has been proposed that allows for variable-size holes in the resistor (see Patent Document 3).

[0004] Patent Document 1: Japanese Patent No. 7462125

[0005] Patent Document 2: Japanese Patent No. 7079388

[0006] Patent Document 3: Japanese Patent No. 7204060

[0007] In plating apparatuses, besides the distance to electrical contacts, the thickness of the coating can also deviate due to the resist pattern formed on the substrate. That is, if the plating surface of the substrate includes areas where resist openings are not formed (non-opening areas), the plating current will not flow through these non-opening areas, and the current will concentrate at the periphery of these areas, resulting in a thicker coating. As a specific example, when resist openings are formed only in a roughly cross-shaped area on the substrate, no current flows through the areas outside the cross, potentially compromising the uniformity of the coating thickness. Here, for example, in Patent Document 1, an anode cover capable of adjusting the size of the anode opening is used to adjust the electric field between the anode and the substrate. However, existing structures are designed to address coating thickness deviations caused by the structure of the plating apparatus, such as electrical contacts, and sometimes cannot adequately address coating thickness deviations caused by the resist pattern on the substrate. Alternatively, virtual openings can be created in non-opening areas to achieve uniform coating thickness. However, this would require processing to create the virtual openings and would result in unnecessary coating at the virtual openings, thus increasing the cost of the coating process. Summary of the Invention

[0008] The present invention was made in view of the above-mentioned problems. One of its objectives is to provide a coating apparatus capable of improving the uniformity of the thickness of the coating formed on the object to be coated.

[0009] According to one aspect of the present invention, a plating apparatus is provided. The plating apparatus includes: a plating tank; a substrate holder configured to hold a substrate; an anode disposed in the plating tank opposite to the substrate held by the substrate holder; at least one resistor disposed between the anode and the substrate holder for electric field adjustment, the at least one resistor having a plurality of through holes communicating with both the anode side and the substrate holder side; and a resistor member disposed between the anode and the substrate holder for electric field adjustment, the resistor member having an inlet for introducing fluid, configured to change the volume of the fluid inside the resistor member by changing the amount or pressure of the fluid, the resistor member being configured not to block the plurality of through holes on the surface of the at least one resistor closest to the anode. Attached Figure Description

[0010] Figure 1 This is a perspective view showing the overall structure of the plating apparatus according to the first embodiment.

[0011] Figure 2 This is a top view showing the overall structure of the plating apparatus according to the first embodiment.

[0012] Figure 3This is a longitudinal sectional view schematically illustrating the structure of the plating module of the first embodiment.

[0013] Figure 4 This is an enlarged bottom view schematically showing the surface of the resistor closest to the anode in the first embodiment.

[0014] Figure 5 This is a schematic top view of the resistor component.

[0015] Figure 6 This is a schematic diagram illustrating the electric field around a resistive component in its contracted state.

[0016] Figure 7 This is a schematic diagram illustrating the electric field around a resistive component in an expanded state.

[0017] Figure 8 This is a flowchart illustrating an example of a method for setting the action scheme of the resistor component, anode cover, and shield based on the control module.

[0018] Figure 9 It is a schematic diagram showing a resist pattern formed on the plated surface of a substrate in one embodiment.

[0019] Figure 10 This is a flowchart illustrating an example of a method for setting the action scheme of resistive components, anode covers, and shielding bodies during the plating process based on a control module.

[0020] Figure 11 This is a longitudinal sectional view of a resistor component in variant example 1-1, schematically representing the contracted state.

[0021] Figure 12 This is a longitudinal sectional view of a resistor component, schematically representing a modified example 1-1 in an expanded state.

[0022] Figure 13 This is a longitudinal sectional view of a resistor component in variant example 1-2, schematically representing the contracted state.

[0023] Figure 14 This is a longitudinal sectional view of a resistor component, schematically representing a modified example 1-2 in an expanded state.

[0024] Figure 15 This is a longitudinal sectional view schematically illustrating the structure of the plating module of the second embodiment.

[0025] Figure 16 This is a longitudinal sectional view schematically representing the structure of the plating module in Modified Example 2.

[0026] Figure 17 This is a longitudinal sectional view schematically illustrating the structure of a plating module in a third embodiment of a resistor component in a contracted state.

[0027] Figure 18 This is a longitudinal sectional view schematically illustrating the structure of a plating module in a third embodiment of a resistive component in an expanded state. Detailed Implementation

[0028] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or equivalent constituent elements are labeled with the same reference numerals and repeated descriptions are omitted.

[0029] First Implementation Method

[0030] <Overall Structure of the Plating Equipment>

[0031] Figure 1 This is a perspective view showing the overall structure of the plating apparatus 1000 of this embodiment. Figure 2 This is a top view showing the overall structure of the plating apparatus 1000. (Example) Figure 1 and Figure 2 As shown, the plating apparatus 1000 includes: a loading port 100, a handling robot 110, an alignment device 120, a pre-wetting module 200, a pre-immersion module 300, a plating module 400, a cleaning module 500, a rotary rinsing and drying device 600, a handling device 700, and a control module 800.

[0032] The loading port 100 is a module used to load substrates, which are objects to be plated and housed in a FOUP box (not shown), into the plating apparatus 1000, or to remove substrates from the plating apparatus 1000 into the box. In this embodiment, four loading ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of the loading ports 100 are arbitrary. The handling robot 110 is a robot for handling substrates, configured to exchange substrates between the loading ports 100, the alignment device 120, and the handling device 700. When exchanging substrates between the handling robot 110 and the handling device 700, the handling robot 110 and the handling device 700 can exchange substrates via a temporary stage (not shown).

[0033] Aligner 120 is a module used to align the orientation plane, notch, and other positions of the substrate with a predetermined direction. In this embodiment, two alignment devices 120 are arranged side by side in the horizontal direction, but the number and arrangement of alignment devices 120 are arbitrary. Pre-wetting module 200 uses a treatment liquid (pre-wetting liquid) such as pure water or degassed water to wet the substrate surface to be plated before plating, thereby replacing the air inside the pattern formed on the substrate surface with the treatment liquid. Pre-wetting module 200 is configured to perform a pre-wetting process, which facilitates the supply of plating liquid to the inside of the pattern by replacing the treatment liquid inside the pattern with plating liquid during plating. In this embodiment, two pre-wetting modules 200 are arranged side by side in the vertical direction, but the number and arrangement of pre-wetting modules 200 are arbitrary.

[0034] The pre-impregnation module 300 is configured to perform a pre-impregnation process, which involves, for example, etching away high-resistivity oxide films such as those on the seed layer surface of the substrate to be plated before plating with a treatment solution such as sulfuric acid or hydrochloric acid, and cleaning or activating the surface of the substrate to be plated. In this embodiment, two pre-impregnation modules 300 are arranged side-by-side in the vertical direction, but the number and arrangement of the pre-impregnation modules 300 are arbitrary. The plating module 400 performs the plating process on the substrate. In this embodiment, there are two sets of twelve plating modules 400, with three arranged side-by-side in the vertical direction and four arranged side-by-side in the horizontal direction, for a total of twenty-four plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary.

[0035] The cleaning module 500 is configured to clean the substrate to remove residual plating solution or the like after plating. In this embodiment, two cleaning modules 500 are arranged side-by-side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The rotary rinsing and drying device 600 is a module for rotating and drying the cleaned substrate at high speed. In this embodiment, two rotary rinsing and drying devices are arranged side-by-side in the vertical direction, but the number and arrangement of the rotary rinsing and drying devices are arbitrary. The conveying device 700 is a device for conveying the substrate between multiple modules within the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000, and can be configured, for example, by a general-purpose computer or a dedicated computer equipped with an input / output interface for the operator.

[0036] An example of a series of plating processes based on the plating apparatus 1000 will be described. First, a substrate stored in a box is moved into the loading port 100. Next, a handling robot 110 removes the substrate from the box in the loading port 100 and transports the substrate to the aligner 120. The aligner 120 aligns the orientation plane, notches, and other positions of the substrate with a predetermined direction. The handling robot 110 then transfers the substrate, which has been aligned by the aligner 120, to the handling device 700.

[0037] The transport device 700 transports the substrate received from the transport robot 110 to the pre-humidification module 200. The pre-humidification module 200 performs a pre-humidification treatment on the substrate. The transport device 700 then transports the pre-humidified substrate to the pre-impregnation module 300. The pre-impregnation module 300 performs a pre-impregnation treatment on the substrate. The transport device 700 then transports the pre-impregnation treated substrate to the plating module 400. The plating module 400 performs a plating treatment on the substrate.

[0038] The transport device 700 transports the plated substrate to the cleaning module 500. The cleaning module 500 cleans the substrate. The transport device 700 then transports the cleaned substrate to the rotary rinsing and drying device 600. The rotary rinsing and drying device 600 dries the substrate. The transport device 700 then transfers the dried substrate to the transport robot 110. The transport robot 110 transports the substrate received from the transport device 700 to a cassette in the loading port 100. Finally, the cassette containing the substrate is removed from the loading port 100.

[0039] <Structure of the plating module>

[0040] Next, the structure of the plating module 400 will be described. Since the twenty-four plating modules 400 in this embodiment have the same structure, only one plating module 400 will be described. Figure 3 This is a longitudinal sectional view schematically illustrating the structure of the plating module 400 in this embodiment. (See attached image.) Figure 3 As shown, the plating module 400 includes a plating tank 410 for containing plating liquid. The plating tank 410 is configured to include a cylindrical inner tank 412 with an opening at the top and an outer tank 414 disposed around the inner tank 412 to store plating liquid overflowing from the upper edge of the inner tank 412.

[0041] The plating module 400 includes a substrate holder 440 for holding the substrate Wf with the plating surface Wf-a facing downwards. The substrate holder 440 also includes a power supply contact for supplying power to the substrate Wf from a power source (not shown). The plating module 400 includes a lifting mechanism 442 for raising and lowering the substrate holder 440. Additionally, the plating module 400 includes a rotation mechanism 448 for rotating the substrate holder 440 about a rotation axis Ax during plating. This rotation axis Ax is preferably aligned with the central axis of the plating module 400. In the inner tank 412, the anode 430 and anode cover 426 (described later) are coaxially arranged about the central axis of the plating module 400. Hereinafter, "radial" and "circumferential" refer to the radial and circumferential directions relative to the rotation axis Ax. Furthermore, the axis parallel to the rotation axis Ax is designated as the Z-axis, and the axes perpendicular to and orthogonal to the Z-axis are designated as the X-axis and Y-axis. The lifting mechanism 442 and the rotating mechanism 448 can be implemented by known mechanisms such as motors.

[0042] The plating apparatus 1000 is a cup-type electroplating apparatus in which a substrate Wf (e.g., a semiconductor wafer) held by a substrate holder 440 with the plating surface Wf-a facing downwards is immersed in a plating solution, and a voltage is applied between the substrate Wf and the anode 430 to deposit a conductive film on the surface of the substrate Wf. In one embodiment, the plating process is performed while the substrate Wf is rotated, thereby making the thickness of the plating formed on the substrate Wf more uniform.

[0043] The plating module 400 includes a diaphragm 420 that divides the interior of the inner tank 412 vertically. The interior of the inner tank 412 is divided into a cathode region 422 and an anode region 424 by the diaphragm 420. The cathode region 422 and the anode region 424 are respectively filled with plating solution. In addition, in this embodiment, an example with the diaphragm 420 is shown, but the diaphragm 420 may not be provided.

[0044] An anode 430 is disposed on the bottom surface of the inner tank 412 of the anode region 424. The anode 430 is disposed in the plating tank 410 opposite to the substrate Wf. Additionally, an anode cover 426 for adjusting the electric field between the anode 430 and the substrate Wf is disposed in the anode region 424. The anode cover 426 is, for example, a generally plate-shaped component made of a dielectric material, and is disposed on the front surface (above) of the anode 430. The anode cover 426 has an opening, i.e., an anode opening 427, through which current flows between the anode 430 and the substrate Wf. Furthermore, in this embodiment, an example with an anode cover 426 is shown, but the anode cover 426 may not be provided. Also, the aforementioned diaphragm 420 may be provided in the anode opening 427.

[0045] In the cathode region 422, a resistor 450 is disposed between the anode 430 and the substrate holder 440. In this embodiment, the resistor 450 is positioned opposite the diaphragm 420. The resistor 450 is a component used to adjust the electric field in the plating solution and to achieve uniformity of the plating process on the plating surface Wf-a of the substrate Wf. In the illustrated example, the resistor 450 is cylindrical, and its cylindrical axis is approximately aligned with the rotation axis Ax. Furthermore, the shape of the resistor 450 is not particularly limited as long as plating can be performed with the desired precision.

[0046] The resistor 450 is formed of a component with a resistivity higher than that of the plating solution. This component is preferably a dielectric. The resistor 450 may contain metal or resin. The resistor 450 for electric field adjustment has a first surface 451 on the anode side and a second surface 452 on the substrate holder side.

[0047] Figure 4 This is an enlarged bottom view schematically showing the first surface 451 of the anode side of the resistor 450. Multiple through holes 453 are formed in the resistor 450. The through holes 453 connect the first surface 451 and the second surface 452 of the resistor 450, forming a path for the plating solution and ions in the plating solution to pass through. In other words, the resistor 450 connects the cathode region 422 on the anode side of the resistor 450 and the cathode region 422 on the substrate holder side of the resistor 450 via the through holes 453 in a manner that allows the plating solution and ions in the plating solution to move. The multiple through holes 453 communicate with the anode side and the substrate holder side of the resistor 450, respectively. Figure 4 In the example, the through holes 453 are arranged regularly with a constant distance between adjacent through holes 453, but the pattern of the through holes 453 is not particularly limited as long as it can be plated with the desired precision, and the through holes 453 can also be arranged randomly.

[0048] The resistor 450 may have a porous structure based on multiple through holes 453. With such a structure, the holes are distributed, and by adjusting the current through these holes, the thickness of the plating formed on the substrate Wf can be made uniform.

[0049] like Figure 3As shown, the plating module 400 includes a resistive component 470. The resistive component 470 is used to adjust the electric field in the plating solution and achieve uniform plating on the plating surface Wf-a of the substrate Wf. The resistive component 470 for electric field adjustment is capable of expansion and contraction. The resistive component 470 has an inlet 473 for introducing fluid, and the resistive component 470 is configured to change its volume by changing the amount or pressure of the fluid inside the resistive component 470. The resistive component 470 is configured to switch between a contracted state and an expanded state with a volume larger than the contracted state. The type of fluid is not particularly limited and can be a gas or a liquid. From the viewpoint of simplifying the structure and reducing costs, the fluid can be air.

[0050] The plating module 400 includes an inlet pipe 475 and an adjustment module 476. The inlet pipe 475 is a pipe for introducing fluid into the resistive component 470 and is in fluid communication with the inlet port 473. The inlet pipe 475 is external to the plating tank 410 and is in fluid communication with the adjustment module 476. The adjustment module 476 includes a pump or pressure regulator, etc., to adjust the amount or pressure of the fluid inside the resistive component 470. As described later, the adjustment module 476 can also be controlled by the control module 800 (…). Figure 1 )control.

[0051] The resistive component 470 includes a film-like component 477 and a cavity 478 surrounded by the film-like component 477 and through which fluid is introduced. An inlet 473 is formed in the film-like component 477, and the inlet 473 communicates with the cavity 478. The material of the film-like component 477 is not particularly limited, as long as the plating solution is not impermeable and the resistive component 470 can deform by expansion and contraction. From the viewpoint of facilitating the expansion and contraction of the resistive component 470, the film-like component 477 preferably comprises an elastic film, which preferably comprises rubber or silicone resin, and may include, for example, silicone rubber.

[0052] A resistive component 470 is disposed between the anode 430 and the resistive element 450. The resistive component 470 can be disposed between the anode 430 and the resistive element 450 in the direction extending along the rotation axis Ax. In the cup-shaped plating module 400 according to this embodiment, the resistive component 470 can be disposed between the anode 430 and the resistive element 450 in the vertical direction. The resistive component 470 is preferably disposed between the anode cover 426 and the resistive element 450. Alternatively, as shown in the illustrated example, the resistive component 470 can be disposed between the film 420 and the resistive element 450.

[0053] The resistor component 470 can be supported and disposed in the plating solution by a support component (not shown). Such a support component is not particularly limited and can be, for example, a wire, rope, or rod-shaped component extending from the resistor 450. Alternatively, the resistor component 470 can also be supported by a component extending from the outside or inside the plating tank 410. Furthermore, the resistor component 470 can also be supported by an inlet pipe 475.

[0054] Figure 5 This is a schematic top view of the resistor component 470. As described later, the resistor component 470 is preferably annular. The radial range of the resistor component 470 relative to the rotation axis Ax can be set to be 50% or more outward from the radial distance from the rotation axis Ax to the farthest point of the resistor body 450. Alternatively, this range can be set to 90% or more inward from the radial distance from the rotation axis Ax to the farthest point of the resistor body 450. In one embodiment, the inner diameter of the resistor component 470 is 50% to 70% of the diameter of the resistor body 450 or the substrate Wf, preferably 55% to 65%. In another embodiment, the outer diameter of the resistor component 470 is 70% to 90% of the diameter of the resistor body 450 or the substrate Wf, preferably 80% to 90%. Therefore, for areas where the uniformity of the plating thickness is easily reduced, the electric field can be effectively adjusted, and the uniformity of the plating thickness formed on the substrate Wf can be further improved. Furthermore, the shape and size of the resistor component 470 are not particularly limited and can be appropriately set according to the location where the electric field is to be locally changed during plating.

[0055] Figure 6 and Figure 7 This is a schematic diagram showing the electric field around the resistive component 470. Figure 6 A schematic longitudinal sectional view of the resistor component 470 in its retracted state. Figure 7 A schematic longitudinal sectional view of the resistor component 470 in its expanded state. Figure 6 and Figure 7 In the diagram, the electric field is schematically represented by arrow Ar1. In this embodiment, the resistor member 470 is configured to expand and contract in the direction extending along the rotation axis Ax of the substrate holder 440. This results in a simpler structure compared to expansion and contraction in other directions, allows for more precise adjustment of the electric field, and facilitates the manufacture of the resistor member 470. In the resistor member 470, the direction of expansion and contraction can be set by placing a rigid member on a surface other than the surface on the resistor body side, thus preventing a portion of the film member 477 from moving.

[0056] Electric field lines corresponding to the electric field from the anode 430 upward toward the substrate holder 440 bypass the resistor member 470. This occurs when the resistor member 470 is in an expanded state. Figure 7In this example, the distance between the resistive component 470 and the resistive body 450 is short and the electric field lines do not sufficiently bypass it. Therefore, the electric field near the first surface 451 on the anode side of the resistive body 450 is smaller above the resistive component 470 than below it where there is no resistive component 470. In this case, the resistance of the path through the location above the resistive component 470 is greater than the resistance of the path through the location where there is no resistive component 470. On the other hand, when the resistive component 470 is in a contracted state... Figure 6 In this example, there is a certain distance between the resistive component 470 and the resistive body 450, so the electric field lines bypass the resistive component 470 to some extent. Therefore, near the first surface 451 on the anode side of the resistive body 450, and... Figure 6 Compared to the previous example, it can reduce the influence of the resistive component 470 on the electric field.

[0057] Therefore, by adjusting the volume of the resistor 470, the local electric field, i.e., the local plating current, in the plating solution can be adjusted. This improves the uniformity of the coating thickness formed on the substrate Wf, the object to be plated. Thus, the weakening of the electric field due to the resistor 470 is referred to as the shielding of the electric field by the resistor 470.

[0058] The resistor component 470 is configured to not block the plurality of through holes 453 on the first surface 451 of the resistor body 450 closest to the anode 430. Here, "configured to not block the plurality of through holes 453" means that during plating, especially when the resistor component 470 expands, the resistor component 470 does not block the through holes 453. This suppresses deformation of the inlet tube 475 or the support component supporting the resistor component 470 caused by the reaction force of the expanding resistor component 470 pressing against the first surface 451 of the resistor body 450. When the plating module 400 has a plurality of resistor bodies 450, the resistor component 470 can be configured to not block the plurality of through holes 453 on the surface of the plurality of resistor bodies 450 closest to the anode side. The resistor component 470 is configured to generate a resistance corresponding to its volume in the plating solution introduced into the plating tank 410, thereby enabling more precise adjustment of the local plating current.

[0059] like Figure 3As shown, the plating module 400 includes: a blade 491 disposed between a substrate Wf held by a substrate holder 440 and a resistor 450; and a blade stirring mechanism (not shown) for moving the blade 491 within the plating solution to stir the plating solution. The blade 491 is not limited, but can be, for example, a plate component with a large number of honeycomb-shaped holes. The blade stirring mechanism can be implemented using a known mechanism such as a motor. The blade stirring mechanism is configured to reciprocate the blade 491 along the plating surface Wf-a of the substrate Wf, thereby stirring the plating solution near the plating surface Wf-a of the substrate Wf. However, it is not limited to the above example; as an example, the blade stirring mechanism may also be configured to reciprocate the blade 491 perpendicular to the plating surface Wf-a. Furthermore, in this embodiment, an example with a blade 491 and a blade stirring mechanism is shown, but the blade 491 and blade stirring mechanism may not be provided.

[0060] A shield 492 is provided in the cathode region 422 to shield the current flowing from the anode 430 to the substrate Wf. In this embodiment, the shield 492 is provided at the same height as the blade 491, but is not limited to the example described above. The shield 492 is, for example, a generally plate-shaped component made of a dielectric material. The shield 492 is configured to be movable to a shielding position between the plated surface Wf-a of the substrate Wf and the anode 430, and to a retracted position away from the plated surface Wf-a and the anode 430. In other words, the shield 492 is configured to be movable to a shielding position below the plated surface Wf-a and a retracted position away from the plated surface Wf-a. The position of the shield 492 is controlled by a shield drive mechanism (not shown) that receives instructions from the control module 800. The shield drive mechanism can be implemented by a known mechanism such as a motor or a solenoid.

[0061] Additionally, a sensor 460 is provided in the cathode region 422 to detect parameters related to the coating on the substrate Wf-a. In this embodiment, the sensor 460 is a film thickness sensor for measuring the thickness of the coating, and the parameters related to the coating refer to physical quantities used to infer the film thickness or the formation rate of the coating. The sensor 460 is configured to face the coating surface Wf-a. In this embodiment, the sensor 460 is configured to be movable in a manner that changes the detection position radially relative to the rotation axis Ax. However, it is not limited to the above example, and multiple sensors 460 facing the coating surface Wf-a may be provided. In addition, in one embodiment, the detection end of the sensor 460 is disposed inside the resistor 450. However, it is not limited to the above example, and the sensor 460 may be disposed at other locations outside the resistor 450, for example.

[0062] The detection signal from sensor 460 is input to control module 800. Figure 1 In this embodiment, a potential sensor having a detection electrode (not shown) is used as sensor 460. Furthermore, the detection electrode of sensor 460 can be configured to face the plating surface Wf-a, or it can be disposed within a conduit configured to face the plating surface Wf-a and filled with plating solution. Additionally, when using a potential sensor as sensor 460, at least one reference potential sensor (not shown) can be provided within the plating tank 410. The reference potential sensor can be disposed outside the region between the substrate Wf and the anode 430. In other words, viewed from a direction perpendicular to the plating surface Wf-a of the substrate Wf, the reference potential sensor can be positioned at a location that does not overlap with the substrate Wf and the anode 430. The control module 800 can infer the formation rate of the plating film formed on the plating surface Wf-a and determine the thickness of the plating film based on the potential difference between sensor 460 (the potential sensor) and the reference potential sensor. This is based on the correlation between the plating current and potential during the plating process. However, the sensor 460 can be any sensor capable of detecting parameters related to the coating. It can replace a potential sensor or, based on that, employ other sensors such as a white confocal optical distance sensor, a magnetic field sensor, or an eddy current sensor. Furthermore, this embodiment shows an example with a sensor 460 for detecting parameters related to the coating, but the sensor 460 may not be provided.

[0063] The control module 800 can control the contraction and expansion of the resistive component 470 based on the plating thickness obtained using the sensor 460. This allows for adjustment of the resistance while simultaneously checking the uniformity of the formed plating thickness, resulting in a more uniform plating film. When the plating formation speed is slowed down at the desired horizontal position on the substrate Wf corresponding to the resistive component 470, the control module 800 adjusts the resistance of the adjustment module 476. Figure 3 The control module 800 can control the expansion and contraction of the resistor component 470 by increasing the pressure thereon. Additionally, when the deposition rate is to be increased at a desired horizontal position on the substrate Wf corresponding to the resistor component 470, the control module 800 can control the adjustment module 476 to decrease the pressure of the resistor component 470, causing it to contract. Furthermore, the control module 800 can also control the expansion and contraction of the resistor component 470 based on various deposition conditions, such as the size of the anode opening 427, the rotation speed of the substrate holder 440, or the measured or set value of the current flowing in the anode 430 for deposition.

[0064] Thus, the control module 800 can control the expansion and contraction of the resistive component 470 based on at least one of the following: the thickness of the plating formed on the substrate Wf during plating, the current used for plating, the rotational speed of the substrate holder 440, and the size of the anode opening 427. This allows for more precise adjustment of the plating current according to various conditions.

[0065] Here, the plating process of the plating module 400 in this embodiment will be described in more detail. The substrate Wf is immersed in the plating solution in the cathode region 422 using a lifting mechanism 442, thereby exposing the substrate Wf to the plating solution. In this state, the plating module 400 applies a voltage between the anode 430 and the substrate Wf, thereby enabling plating treatment on the plating surface Wf-a of the substrate Wf. In one embodiment, the plating process is performed while rotating the substrate holder 440 using a rotation mechanism 448. Through the plating process, a conductive film (plating) is deposited on the plating surface Wf-a of the substrate Wf.

[0066] In this embodiment, the control module (controller) 800 controls the adjustment module 476 to adjust the expansion and contraction of the resistive component 470, thereby improving the uniformity of the overall film thickness distribution on the substrate Wf. As an example, the adjustment of the resistive component 470 using the adjustment module 476 is performed before the plating process begins. Alternatively, as an example, the adjustment of the resistive component 470 using the adjustment module 476 is performed in real-time during the plating process based on the detection value of the sensor 460.

[0067] Figure 8 This is a flowchart illustrating an example of a method for setting the operation of the resistor component 470, the anode cover 426, and the shield 492 based on the control module 800. As an example, Figure 8 The method shown is performed when processing a new batch of substrates. Furthermore, the control module 800 can also set only a portion of the operation schemes for the resistor 470, the anode cover 426, and the shield 492. Here, the operation scheme for the resistor 470 can be a scheme representing the volume of the resistor 470 or its length along the rotation axis Ax. The control module 800 can also refer to data representing the relationship between the internal pressure of the resistor 470 stored in a storage medium (not shown) and its length along the rotation axis Ax, and control the expansion and contraction of the resistor 470 based on this data. Additionally, the operation scheme for the anode cover 426 represents the opening size of the anode cover 426. Furthermore, the operation scheme for the shield 492 represents the forward and backward position of the shield 492. Alternatively, the operation scheme can be set by a computer external to the plating apparatus 1000 and sent to the plating apparatus 1000, instead of being set by the control module 800 of the plating apparatus 1000.

[0068] exist Figure 8In the example shown, firstly, the control module 800 acquires the resist pattern of the substrate Wf, which is the object of processing (step S110). The resist pattern refers to the pattern of the resist layer formed on the plating surface Wf-a in order to form the desired plating pattern through the plating process. The resist pattern can also be acquired by detecting the substrate Wf using a sensor provided in the plating apparatus 1000. As an example, the plating apparatus 1000 may also be a device equipped with an imaging sensor (not shown) such as a camera that captures images of the plating surface Wf-a of the substrate Wf. Furthermore, the control module 800 can also acquire the imaging data detected by the imaging sensor and acquire the resist pattern of the plating surface Wf-a by analyzing the imaging data. Acquiring the resist pattern based on the imaging data can be done using known methods based on shadows or feature points in the imaging data. Alternatively, as an example, the control module 800 can also acquire the resist pattern via external input through wired or wireless communication.

[0069] Furthermore, the control module 800 sets the operation schemes for the resistor component 470, the anode cover 426, and the shield 492 based on the acquired resist pattern (step S120). As a specific example, the control module 800 calculates the plating growth coefficient for each defined area of ​​the plated surface Wf-a of the substrate Wf based on the acquired resist pattern, and sets the operation scheme for each controlled object based on the calculated plating growth coefficient. Here, the plating growth coefficient is a parameter representing the growth rate (formation rate) of the plating film when the resistor component 470, the anode cover 426, and the shield 492 are in the state where they are least shielded from current. As an example, the plating growth coefficient can be set as the amount of plating film formed per unit time (e.g., 1 second) (e.g., nanometers). As a specific example, the control module 800 can calculate the aperture ratio of the resist layer in each defined area based on the resist pattern, and calculate the plating growth coefficient based on the calculated aperture ratio. This is based on the fact that in areas with a large aperture ratio of the resist layer, the area of ​​the coating deposit and the amount of coating required to form a certain amount of film are large, and the growth rate of the film tends to be smaller compared with areas with a small aperture ratio of the resist layer.

[0070] Figure 9 This is a schematic diagram illustrating the resist pattern formed on the plated surface Wf-a of a substrate Wf in one embodiment. Figure 9In this embodiment, resist openings are formed only in the shaded cross-shaped region A1, while region A2 outside the cross-shaped region A1 is a non-opening region without resist openings. When plating is performed on a substrate Wf with such a resist pattern, no plating current flows through region A2, which is a non-opening region, and only region A1, which is an opening region. Furthermore, in this embodiment, the plating process is performed while rotating the substrate holder 440 using the rotation mechanism 448. In the cross-shaped protrusion region of region A1, which includes region A2 in the circumferential direction, the plating current is concentrated and the plating thickness increases. In this specification, the region where resist openings are formed in almost all areas when viewed circumferentially is called the "central region B1" (in Figure 9 In the example shown, the inner circular area is enclosed by the dotted line C1. Furthermore, when viewed circumferentially, the area containing both the region with resist openings (opening region A1) and the region without resist openings (non-opening region A2), where the area of ​​opening region A1 is larger than the area of ​​non-opening region A2 circumferentially, is called the "intermediate region B2" (in...). Figure 9 In the example shown, the annular region is enclosed by the dotted lines C1 and C2. Furthermore, when viewed circumferentially, the region containing both the open region A1 and the non-open region A2, where the area of ​​the open region A1 is smaller than the area of ​​the non-open region A2 circumferentially, is called the "outer peripheral region B3" (in...). Figure 9 In the example shown, the area is a ring shape surrounded by dotted lines C2 and C3. Furthermore, in Figure 9 In the example shown, the resist regions are arranged in the order of central region B1, intermediate region B2, and outer peripheral region B3 from the center of the plated surface Wf-a toward the outer periphery, with no resist openings formed on the outer peripheral side of the outer peripheral region B3. However, this is not limited to the above example, and any resist pattern can be formed on the substrate Wf.

[0071] Here, the anode cover 426 or shield 492 provided by the plating module 400 can appropriately adjust the formation rate of the coating near the outer periphery of the surface to be plated, Wf-a. However, in the case of Figure 9 When a substrate Wf as shown is subjected to a plating process, the plating formation rate in the inner peripheral area (especially the middle area B2) is relatively higher than that near the outer periphery, which may impair the uniformity of the coating thickness.

[0072] In this embodiment, the plating module 400 can be configured such that the resistor 470 is annular, and the electric field is adjusted primarily in the region where the resistor 470 is disposed. This allows adjustment of the current flowing in the intermediate region B2, thereby adjusting the plating formation speed of the intermediate region B2. As an example, in... Figure 9In the substrate Wf, when the deposition rate of the intermediate region B2 surrounded by dashed lines C1 and C2 is relatively high, the thickness of the film formed in the intermediate region B2 can be reduced by expanding the resistor component 470. Therefore, as an example, in the case of… Figure 9 When a substrate Wf as shown is subjected to a plating process, the uniformity of the plating thickness can be improved. Furthermore, the plating module 400 of this embodiment includes an anode cover 426 and a shield 492. Therefore, for the central region B2, the plating speed can be adjusted by expanding or contracting the resistor 470, and for the outer peripheral region B3, the plating speed can be adjusted by the anode cover 426 and the shield 492. Thus, by controlling the resistor 450, the anode cover 426, and the shield 492, the plating speed can be adjusted for each region of the substrate Wf, thereby improving the uniformity of the plating thickness. Furthermore, the resistor 470 can also be arched; even in this case, the plating speed of the annular region centered on the rotation axis Ax of the substrate holder 440 can be locally adjusted during plating. Additionally, the size of the resistor 470 can be determined based on the central region B2, for example, making the resistor 470 approximately the same size as the central region B2.

[0073] Figure 10 This is a flowchart illustrating an example of a method for setting the operation scheme of the resistor component 470, the anode cover 426, and the shield 492 during the plating process based on the control module 800. The plating process is performed... Figure 10 The method shown is used instead of Figure 8 The method or modification shown is to Figure 8 The method shown defines the operating scheme. Alternatively, the control module 800 can also define the operating scheme for only a portion of the resistor component 470, the anode cover 426, and the shield 492.

[0074] When the plating process begins (step S210), the control module 800 acquires plating-related parameters from the sensor 460 in real time (step S220). In this embodiment, the plating-related parameters are detected by the sensor 460 as the substrate Wf rotates. In one embodiment, the plating-related parameters are detected at multiple locations radially on the plating surface Wf-a. The control module 800 calculates the film thickness distribution on the plating surface Wf-a based on the detection values ​​from the sensor 460 (step S230). Next, the control module 800 sets the operation schemes for the resistor component 470, the anode cover 426, and the shield 492 based on the calculated film thickness distribution (step S240). The control module 800 repeats steps S220 to S240 to set the operation schemes for the controlled objects until the plating process is completed (step S250). Then, the control module 800 controls the resistor component 470, the anode cover 426, and the shield 492 based on the set operation schemes. In this way, based on the parameters related to the coating obtained from the sensor 460, the operation scheme of the resistor 470 and the like can be set or modified during the coating process, thereby further improving the uniformity of the coating thickness.

[0075] <Variation Example 1-1>

[0076] In the above embodiment, the resistor 470 expands and contracts in the direction in which the rotation axis Ax of the substrate holder 440 extends, but the resistor 470 may also expand and contract radially relative to the rotation axis Ax.

[0077] Figure 11 This is a schematic longitudinal sectional view of the resistor component 470A in this modified example, showing the contracted state. Figure 12 This is a schematic longitudinal sectional view of the resistor component 470A in this modified example, showing its expanded state. Figure 11 In the diagram, the expansion and contraction of the resistor component 470 in the radial direction are schematically represented by arrow Ar2. In the resistor component 470A, the direction of expansion and contraction can be set by preventing movement of the film component 477, etc., by arranging a rigid component on a surface other than its radially outer surface.

[0078] Even with the resistor 470A in this modified example, the electric field above the resistor 470A changes when the resistor 470A expands, thus allowing adjustment of the local plating current. Furthermore, the radial position of the adjustable plating current can be changed.

[0079] <Variations 1-2>

[0080] In the above embodiment, the resistor 470 expands and contracts in the direction in which the rotation axis Ax of the substrate holder 440 extends, but the resistor 470 may also expand and contract in the circumferential direction relative to the rotation axis Ax.

[0081] Figure 13 This is a schematic top view of the resistor component 471 in this modified example, showing the contracted state. Figure 14 This is a schematic top view of the resistive element 471 in this modified example, representing the expansion state. In the illustrated example, the electric field is shielded approximately throughout the entire circumference by three resistive elements 471. The three resistive elements 471 are connected to each other circumferentially, thereby forming a ring-shaped shielding element. The three resistive elements 471 are respectively designated as resistive elements 471A, 471B, and 471C. Fluid is introduced into resistive elements 471A, 471B, and 471C via inlet pipes 475A, 475B, and 475C, respectively, thereby controlling the volume. In the resistive element 471, the direction of expansion and contraction can be set by preventing movement of the film element 477, etc., by arranging a rigid component on a surface other than the surface perpendicular to the circumferential direction.

[0082] Even with the resistor 471 in this modified example, the electric field above the resistor 471 changes when the resistor 471 expands, thus allowing adjustment of the local plating current. Furthermore, the resistor 471 can be compactly configured in the contracted state, increasing its volume variation and enabling more flexible adjustment of the plating current. The number of resistors 471 disposed in the plating module 400 is not particularly limited; it can be 1, 2, or 4 or more. Additionally, the resistors 471 do not necessarily need to be arranged throughout the entire circumference; they can be arranged only within a portion of the angular range around the rotation axis Ax.

[0083] <Variations 1-3>

[0084] In the above embodiment, the plating module 400 is configured as a cup-type plating apparatus, but it can also be configured as an immersion-type plating apparatus. In this case, the substrate Wf, resistor 450, resistor 470, and anode 430 can be arranged along the vertical direction. In this modified example, the same effect as in the above embodiment can also be achieved.

[0085] Second Implementation Method

[0086] The plating apparatus 1000 of the second embodiment has a structure that is substantially the same as that of the plating apparatus 1000 of the first embodiment. However, the difference between the second embodiment and the first embodiment is that, in the plating module 400, a resistor member 470 is disposed between the surface of at least one resistor 450 closest to the anode side and the surface closest to the substrate holder side.

[0087] Figure 15This is a schematic longitudinal sectional view showing the structure within the inner groove 412 of the plating module 400A in this embodiment. The plating module 400A includes a plurality of resistors 450A and 450B. Resistors 450A and 450B are located between the substrate holder 440 and the anode 430, with resistor 450B disposed on the anode side of resistor 450A. A resistor member 470 is disposed in the cathode region 422A between resistors 450A and 450B. Resistors 450A and 450B may also have the same shape as resistor 450 in the above embodiment. The resistor member 470 may expand only upward, expand only downward, or expand both upward and downward. In this embodiment, by arranging the resistor element 470 between multiple resistors 450A and 450B, it is possible to change and reduce the electric field between the resistor element 470 and the resistor 450A and between the resistor element 470 and the resistor 450B, and to make more precise adjustments to the local plating current.

[0088] Furthermore, the resistor component 470 can block the through-hole 453 with an opening on the anode side of the resistor 450A, or it can block the through-hole 453 with an opening on the substrate holder side of the resistor 450B. This allows for a greater variation in the plating current through the through-holes 453 of the resistors 450A and 450B, enabling more flexible adjustment of the local plating current. Alternatively, instead of the resistor component 470, or based on the configuration of the resistor component 470, the resistor component 470A or 471 of the modified example described above can be disposed between the resistors 450A and 450B.

[0089] <Variation Example 2>

[0090] In the plating module 400 of the above embodiment, a resistor component 470 may also be disposed inside the resistor body 450.

[0091] Figure 16 This is a schematic longitudinal sectional view showing the structure of the inner tank 412 of the plating module 400B in this modified example. In the illustrated example, the plating module 400B includes a resistor 450C. The resistor 450C has a hollow inner chamber 454 defining the resistor 450C. A resistor 470 is disposed in the inner chamber 454 and plating liquid is introduced into it. The inner chamber 454 is connected to the substrate holder side of the resistor 450C via a plurality of through holes 453A. The inner chamber 454 is connected to the anode side of the resistor 450C via a plurality of through holes 453B. In this modified example, it can also achieve the same functional effect as the plating module 400A described above.

[0092] Third Implementation Method

[0093] Figure 17This is a schematic longitudinal sectional view showing the inner groove 412 of the plating module 400C according to the third embodiment. The plating module 400C has a structure that is substantially the same as that of the plating module 400B in the modified example described above. The difference from the plating module 400B is that it has a resistor 450D and a resistor 472 instead of a resistor 450C and a resistor member 470.

[0094] Multiple through holes 453C are formed in the resistor 450D. The through holes 453C pass between the first surface 451 on the anode side of the resistor 450 and the second surface 452 on the substrate holder 440 side, forming a path for the plating solution and ions in the plating solution to pass through.

[0095] A resistor element 450D has a resistor component 472 disposed inside it. The resistor component 472 is disposed in the hollow of the resistor element 450D and is formed by an elastic member. The resistor component 472 has an elastic wall 4720 that defines a through hole 453C in the resistor element 450D. In the illustrated example, the elastic wall 4720 is formed to surround the through hole 453C. The shape of the elastic wall 4720 can be appropriately set according to the shape of the through hole 453C, but it can be, for example, cylindrical.

[0096] The resistor component 472 has an internal cavity 478A defined by a portion of the hollow inner wall surface defining the resistor body 450D and an elastic wall 4720. In the illustrated example, the elastic wall 4720 surrounds the through-hole 453C, and the cavity 478A surrounds the elastic wall 4720. The interior of the cavity 478A is configured to communicate with an inlet 473 for introducing fluid into the resistor component 472, and the fluid is introduced from the outside of the plating tank 410 via an inlet pipe 475. As an example, the resistor component 472 can have a sieve-like structure with a plurality of through-holes 453C formed in a plate-like shape extending along a horizontal plane.

[0097] In this embodiment, the plating module 400C is configured to control the opening and closing of the through hole 453C by the contraction and expansion of the resistor component 472. Figure 17 In the retracted state, the through-hole 453C of the resistor component 472 is not blocked by the elastic wall 4720, and the anode side and the substrate holder side of the through-hole 453C are connected through the through-hole 453C. Therefore, the through-hole 453C is in the open state.

[0098] Figure 18 This is a schematic longitudinal sectional view showing the inner groove 412 of the plating module 400C, and the resistive component 472 in its expanded state. Figure 18During this process, the pressure inside the cavity 478A of the resistor component 472 increases, causing the resistor component 472 to expand in a direction perpendicular to the rotation axis Ax of the substrate holder 440. The elastic wall 4720 protrudes and blocks the through-hole 453C by narrowing it. Therefore, the through-hole 453C is in a closed state. The inner diameter of the through-hole 453C can also be adjusted by controlling the degree of contraction and expansion of the resistor component 472, allowing the resistance of the through-hole 453C to change continuously.

[0099] In the illustrated example, the opening and closing of all through-holes 453C are controlled, but the opening and closing of only a portion of the through-holes 453C can also be controlled. Thus, in this embodiment, the resistor 472 is disposed inside the resistor body 450D, defining at least a portion of the plurality of through-holes 453C. Therefore, the resistance of the through-holes 453C can be changed by the contraction and expansion of the resistor 472, allowing for more reliable adjustment of the local plating current through the through-holes 453C. The position of the through-holes 453C whose opening and closing are controlled is not particularly limited and can be appropriately set according to the position where the plating current is adjusted.

[0100] The present invention can also be described in the following forms. [Form 1] According to Form 1, a plating apparatus is provided, comprising: a plating tank; a substrate holder configured to hold a substrate; an anode disposed in the plating tank opposite to the substrate held by the substrate holder; at least one resistor disposed between the anode and the substrate holder for electric field adjustment, the at least one resistor having a plurality of through holes communicating with both the anode side and the substrate holder side; and a resistor member disposed between the anode and the substrate holder for electric field adjustment, the resistor member having an inlet for introducing fluid, configured to change the volume of the fluid inside the resistor member by changing the amount or pressure therein, the resistor member being configured not to block the plurality of through holes on the surface of the at least one resistor closest to the anode. According to Form 1, the uniformity of the thickness of the coating formed on the object to be plated can be improved.

[0101] [Version 2] According to Version 2, based on Version 1, the resistor component can expand and contract in the direction extending from the rotation axis of the substrate holder during plating. According to Version 2, a simpler structure can be achieved than in the case of expansion and contraction in other directions, and the electric field can be adjusted more precisely, making the manufacture of the resistor component 470 easier.

[0102] [Modifier 3] According to Modifier 3, based on Modifier 1 or 2, the resistor component can expand and contract radially relative to the rotation axis of the substrate holder during plating. According to Modifier 3, the range for adjusting the plating current can be expanded radially.

[0103] [Version 4] According to Version 4, based on Versions 1 to 3, the resistor component can expand and contract in the circumferential direction relative to the rotation axis of the substrate holder during plating. According to Version 4, the resistor component can be compactly configured in the contracted state, and the volume variation of the resistor component can be increased, allowing for more flexible adjustment of the plating current.

[0104] [Form 5] According to Form 5, based on Forms 1 to 4, the aforementioned resistor component is in the shape of a ring or an arch. The formation speed of the plating sometimes depends on the distance from the center of the object, therefore, according to Form 5, in such cases, it is possible to particularly improve the uniformity of the thickness of the formed plating.

[0105] [Modifier 6] According to Modifier 6, based on Modifiers 1 to 5, the resistive component is configured to generate a resistance corresponding to the volume in the plating solution introduced into the plating tank. According to Modifier 6, the local plating current can be adjusted more precisely.

[0106] [Modifier 7] According to Modifier 7, based on Modifier 1, the resistor component is disposed inside the resistor body, defining at least a portion of the plurality of through holes. According to Modifier 7, the plating current through the through holes can be adjusted more reliably.

[0107] [Version 8] According to Version 8, based on Versions 1 to 6, the plating apparatus includes a plurality of the aforementioned resistive elements, and the resistive component is disposed between the plurality of resistive elements. According to Version 8, it is possible to obtain the effect of adjusting the electric field between the resistive component and each of the plurality of resistive elements, and it is possible to adjust the local plating current more precisely.

[0108] [Form 9] According to Form 9, based on Forms 1 to 8, the substrate holding structure holds the substrate in the plating tank with the plating surface facing downwards. According to Form 9, the advantages of the cup-type plating apparatus can be utilized to perform plating.

[0109] The embodiments of the present invention have been described above. However, the above embodiments are for the purpose of easy understanding of the present invention and are not intended to limit the present invention. The present invention can be modified and improved without departing from its spirit, and equivalent structures are naturally included in the present invention. Furthermore, within the scope of solving at least a portion of the above-mentioned problems or achieving at least a portion of the effects, any combination of embodiments and modifications is possible, and any combination or omission of the constituent elements described in the claims and specification is possible.

[0110] Explanation of reference numerals in the attached figures

[0111] 400, 400A, 400B, 400C… Plating module; 410… Plating tank; 412… Inner tank; 420… Diaphragm; 422, 422A… Cathode region; 424… Anode region; 426… Anode cover; 427… Anode opening; 430… Anode; 440… Substrate holder; 442… Lifting mechanism; 448… Rotating mechanism; 450, 450A, 450B, 450C, 450D… Resistor; 451… First surface of resistor; 453, 453A, 453B 453C…Through hole; 460…Sensor; 470, 470A, 471, 471A, 471B, 471C, 472…Resistor; 473…Inlet; 475, 475A, 475B, 475C…Inlet tube; 476…Adjustment module; 477…Membrane component; 478, 478A…Vacuum; 492…Shield; 800…Control module; 1000…Coating device; 4720…Elastic wall; Ax…Rotation shaft; Wf…Substrate; Wf-a…Coated surface.

Claims

1. A plating apparatus, characterized in that, have: Plating tank; A substrate holder is configured to hold the substrate. An anode is disposed in the plating bath in a manner opposite to the substrate held by the substrate holder; At least one resistor is disposed between the anode and the substrate holder for electric field adjustment, and the at least one resistor has a plurality of through holes communicating with the anode side and the substrate holder side respectively; as well as A resistor component, disposed between the anode and the substrate holder, is used for electric field adjustment. The resistive component has an inlet for introducing fluid, configured to change the amount or pressure of the fluid inside the resistive component, thereby causing a change in volume. The resistive component is configured not to block the plurality of through holes on the surface of at least one resistive element closest to the anode. The resistive component comprises a film-like component and surfaces disposed on the resistive body side of the resistive component, and is configured to restrict the movement of the film-like component through contact with the film-like component. The resistive component is configured to expand in the direction of the plurality of through holes close to the resistive body.

2. The plating apparatus according to claim 1, characterized in that, The resistive component is capable of expanding and contracting in the direction of the rotation axis extending from the substrate holder during plating.

3. The plating apparatus according to claim 1 or 2, characterized in that, The resistor component is ring-shaped or arch-shaped.

4. The plating apparatus according to claim 1 or 2, characterized in that, The resistive component is configured to generate a resistance corresponding to the volume in the plating solution introduced into the plating tank.

5. The plating apparatus according to claim 1 or 2, characterized in that, The substrate holding structure is configured to hold the substrate within the plating tank with the plating surface facing downwards.

6. A plating apparatus, characterized in that, have: Plating tank; A substrate holder is configured to hold the substrate. An anode is disposed in the plating bath in a manner opposite to the substrate held by the substrate holder; At least one resistor is disposed between the anode and the substrate holder for electric field adjustment, and the at least one resistor has a plurality of through holes communicating with the anode side and the substrate holder side respectively; as well as A resistor component, disposed between the anode and the substrate holder, is used for electric field adjustment. The resistive component has an inlet for introducing fluid, configured to change the amount or pressure of the fluid inside the resistive component, thereby causing a change in volume. The resistive component is configured not to block the plurality of through holes on the surface of at least one resistive element closest to the anode. The resistive component is disposed inside the resistive body, defining at least a portion of the plurality of through holes.

7. A plating apparatus, characterized in that, have: Plating tank; A substrate holder is configured to hold the substrate. An anode is disposed in the plating bath in a manner opposite to the substrate held by the substrate holder; Multiple resistors are disposed between the anode and the substrate holder for electric field adjustment. Each of the multiple resistors has multiple through holes communicating with the anode side and the substrate holder side. as well as A resistor component, disposed between the anode and the substrate holder, is used for electric field adjustment. The resistive component has an inlet for introducing fluid, configured to change the amount or pressure of the fluid inside the resistive component, thereby causing a change in volume. The resistive component is configured to not block the plurality of through holes on the surface of the plurality of resistive elements closest to the anode. The resistor component is disposed among the plurality of resistors.

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